WO2009024414A3 - Thermokraftelement oder peltier-elemente aus gesinterten nanokristallen aus silicium, germanium oder silicium-germanium legierungen - Google Patents

Thermokraftelement oder peltier-elemente aus gesinterten nanokristallen aus silicium, germanium oder silicium-germanium legierungen Download PDF

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Publication number
WO2009024414A3
WO2009024414A3 PCT/EP2008/059268 EP2008059268W WO2009024414A3 WO 2009024414 A3 WO2009024414 A3 WO 2009024414A3 EP 2008059268 W EP2008059268 W EP 2008059268W WO 2009024414 A3 WO2009024414 A3 WO 2009024414A3
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WO
WIPO (PCT)
Prior art keywords
silicon
germanium
peltier elements
thermal power
power element
Prior art date
Application number
PCT/EP2008/059268
Other languages
English (en)
French (fr)
Other versions
WO2009024414A2 (de
Inventor
André Ebbers
Martin Trocha
Robert Lechner
Martin S. Brandt
Martin Stutzmann
Hartmut Wiggers
Christof Schulz
Original Assignee
Evonik Degussa Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evonik Degussa Gmbh filed Critical Evonik Degussa Gmbh
Publication of WO2009024414A2 publication Critical patent/WO2009024414A2/de
Publication of WO2009024414A3 publication Critical patent/WO2009024414A3/de

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Silicon Compounds (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)

Abstract

Die vorliegende Erfindung betrifft ein Verfahren zur Herstellung thermoelektrischer Bauelemente oder Peltier-Elemente sowie diese Bauelemente aus gedruckten Siliciumschichten, hergestellt aus Dispersionen von zumindest teilweise dotierten, halbleitenden Partikeln, insbesondere aus Silicium, Germanium oder Silicium- Germanium-Legierungen.
PCT/EP2008/059268 2007-08-17 2008-07-16 Thermokraftelement oder peltier-elemente aus gesinterten nanokristallen aus silicium, germanium oder silicium-germanium legierungen WO2009024414A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007039060.4 2007-08-17
DE102007039060.4A DE102007039060B4 (de) 2007-08-17 2007-08-17 Thermokraftelement oder Peltier-Elemente aus gesinterten Nanokristallen aus Silicium, Germanium oder Silicium-Germanium-Legierungen

Publications (2)

Publication Number Publication Date
WO2009024414A2 WO2009024414A2 (de) 2009-02-26
WO2009024414A3 true WO2009024414A3 (de) 2009-11-05

Family

ID=39832650

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/059268 WO2009024414A2 (de) 2007-08-17 2008-07-16 Thermokraftelement oder peltier-elemente aus gesinterten nanokristallen aus silicium, germanium oder silicium-germanium legierungen

Country Status (2)

Country Link
DE (1) DE102007039060B4 (de)
WO (1) WO2009024414A2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009024667A1 (de) * 2009-02-27 2010-09-02 Universität Duisburg-Essen Verfahren zur Herstellung eines Halbleiters sowie Halbleiter und elektrisches Element
EP3196951B1 (de) 2016-01-21 2018-11-14 Evonik Degussa GmbH Rationelles verfahren zur pulvermetallurgischen herstellung thermoelektrischer bauelemente
EP3683850A1 (de) * 2019-01-17 2020-07-22 Evonik Degussa GmbH Thermoelektrische umwandlungselemente und deren herstellung mittels behandlung von siliziumlegierungspulver
CN110299444A (zh) * 2019-05-30 2019-10-01 同济大学 一种EuCd2Sb2基热电材料及其制备方法

Citations (9)

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US5411599A (en) * 1993-09-20 1995-05-02 The United States Of America As Represented The Secretary Of The Army Thermoelectric device utilizing nanoporous material
JPH10242535A (ja) * 1997-02-27 1998-09-11 Central Res Inst Of Electric Power Ind 熱電材料及びその製造方法
EP1083610A1 (de) * 1999-03-10 2001-03-14 Sumitomo Special Metals Company Limited Thermoelektrisches umwandlungsmaterial und herstellungsverfahren dafür
US6225548B1 (en) * 1998-11-27 2001-05-01 Aisin Seiki Kabushiki Kaisha Thermoelectric semiconductor compound and method of making the same
EP1187230A2 (de) * 2000-09-04 2002-03-13 Japan Aviation Electronics Industry, Limited Thermoelektrisches Material und Verfahren zu dessen Herstellung
DE10353996A1 (de) * 2003-11-19 2005-06-09 Degussa Ag Nanoskaliges, kristallines Siliciumpulver
WO2005091393A1 (ja) * 2004-03-22 2005-09-29 Japan Science And Technology Agency 多孔質熱電材料及びその製造方法
DE102005056446A1 (de) * 2005-05-14 2006-11-16 Degussa Ag Siliciumpulver enthaltende Dispersion und Verfahren zur Beschichtung
DE102007014608A1 (de) * 2007-03-23 2008-09-25 Evonik Degussa Gmbh Poröser halbleitender Film sowie ein Verfahren zu dessen Herstellung

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1196208C (zh) * 1997-10-24 2005-04-06 株式会社新王磁材 硅基导电材料及其制造方法
US6958443B2 (en) * 2003-05-19 2005-10-25 Applied Digital Solutions Low power thermoelectric generator
KR101090868B1 (ko) * 2004-12-24 2011-12-08 재단법인 포항산업과학연구원 다공성 열전소자의 제조방법
WO2006121870A2 (en) * 2005-05-09 2006-11-16 Vesta Research, Ltd. Silicon nanosponge particles
EP1760045A1 (de) 2005-09-03 2007-03-07 Degussa GmbH Nanoskalige Siliziumteilchen

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5411599A (en) * 1993-09-20 1995-05-02 The United States Of America As Represented The Secretary Of The Army Thermoelectric device utilizing nanoporous material
JPH10242535A (ja) * 1997-02-27 1998-09-11 Central Res Inst Of Electric Power Ind 熱電材料及びその製造方法
US6225548B1 (en) * 1998-11-27 2001-05-01 Aisin Seiki Kabushiki Kaisha Thermoelectric semiconductor compound and method of making the same
EP1083610A1 (de) * 1999-03-10 2001-03-14 Sumitomo Special Metals Company Limited Thermoelektrisches umwandlungsmaterial und herstellungsverfahren dafür
EP1187230A2 (de) * 2000-09-04 2002-03-13 Japan Aviation Electronics Industry, Limited Thermoelektrisches Material und Verfahren zu dessen Herstellung
DE10353996A1 (de) * 2003-11-19 2005-06-09 Degussa Ag Nanoskaliges, kristallines Siliciumpulver
WO2005091393A1 (ja) * 2004-03-22 2005-09-29 Japan Science And Technology Agency 多孔質熱電材料及びその製造方法
US20070240749A1 (en) * 2004-03-22 2007-10-18 Japan Science And Technology Agency Porous Thermoelectric Material and Process for Producing the Same
DE102005056446A1 (de) * 2005-05-14 2006-11-16 Degussa Ag Siliciumpulver enthaltende Dispersion und Verfahren zur Beschichtung
DE102007014608A1 (de) * 2007-03-23 2008-09-25 Evonik Degussa Gmbh Poröser halbleitender Film sowie ein Verfahren zu dessen Herstellung

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
HARRIS T ET AL: "Thermal conductivity reduction of SiGe nanocomposites", STRUCTURE AND MECHANICAL BEHAVIOR OF BIOLOGICAL MATERIALS. SYMPOSIUM - 29-31 MARCH 2005 - SAN FRANCISCO, CA, USA (IN: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS),, 1 December 2003 (2003-12-01), pages 169 - 174, XP002454074, ISBN: 978-1-55899-828-5 *
LECHNER, R. ET AL: "Thermoelectric effect in laser annealed printed nanocrystalline silicon layers", PHYS. STATUS SOLIDI RRL, vol. 1, no. 6, 11 October 2007 (2007-10-11), Weinheim, pages 262 - 264, XP002537704 *
WIGGERS H ET AL: "SILICON PARTICLE FORMATION BY PYROLYSIS OF SILANE IN A HOT WALL GASPHASE REACTOR", CHEMICAL ENGINEERING AND TECHNOLOGY, WEINHEIM, DE, vol. 24, no. 3, 1 January 2001 (2001-01-01), pages 261 - 264, XP009042555, ISSN: 0930-7516 *

Also Published As

Publication number Publication date
DE102007039060B4 (de) 2019-04-25
DE102007039060A1 (de) 2009-02-19
WO2009024414A2 (de) 2009-02-26

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