WO2009020091A1 - Ito sintered body and ito sputtering target - Google Patents

Ito sintered body and ito sputtering target Download PDF

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Publication number
WO2009020091A1
WO2009020091A1 PCT/JP2008/063954 JP2008063954W WO2009020091A1 WO 2009020091 A1 WO2009020091 A1 WO 2009020091A1 JP 2008063954 W JP2008063954 W JP 2008063954W WO 2009020091 A1 WO2009020091 A1 WO 2009020091A1
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WO
WIPO (PCT)
Prior art keywords
ito
sputtering target
sintered body
ito sputtering
target material
Prior art date
Application number
PCT/JP2008/063954
Other languages
French (fr)
Japanese (ja)
Inventor
Kazuo Matsumae
Seiichiro Takahashi
Hiromitsu Hayashi
Original Assignee
Mitsui Mining & Smelting Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co., Ltd. filed Critical Mitsui Mining & Smelting Co., Ltd.
Publication of WO2009020091A1 publication Critical patent/WO2009020091A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
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    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
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    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
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    • C04B2235/658—Atmosphere during thermal treatment
    • C04B2235/6583—Oxygen containing atmosphere, e.g. with changing oxygen pressures
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

Provided are an ITO sintered body, an ITO sputtering target material and an ITO sputtering target, for forming an ITO film having excellent properties with improved yield, especially an ITO sputtering target material and an ITO sputtering target, for obtaining the film having low resistance and excellent amorphous stability by using an ITO sintered body having a low bulk resistance value. A method for manufacturing the ITO sintered body suitable for such ITO sputtering target material and the ITO sputtering target is also provided. The ITO sintered body is an ITO (Indium-Tin-Oxide) sintered body wherein a fine particle composed of In4Sn3O12 exists in an In2O3 mother phase, i.e., the main crystal grain. The fine particle has a three-dimensional star shape having needle-shaped protruding sections radially from the virtual center of the particle.
PCT/JP2008/063954 2007-08-06 2008-08-04 Ito sintered body and ito sputtering target WO2009020091A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007204639A JP2009040621A (en) 2007-08-06 2007-08-06 Ito sintered body and ito sputtering target
JP2007-204639 2007-08-06

Publications (1)

Publication Number Publication Date
WO2009020091A1 true WO2009020091A1 (en) 2009-02-12

Family

ID=40341324

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/063954 WO2009020091A1 (en) 2007-08-06 2008-08-04 Ito sintered body and ito sputtering target

Country Status (5)

Country Link
JP (1) JP2009040621A (en)
KR (1) KR20090082267A (en)
CN (1) CN101622208A (en)
TW (1) TW200925308A (en)
WO (1) WO2009020091A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015125588A1 (en) * 2014-02-18 2015-08-27 三井金属鉱業株式会社 Ito sputtering target material and method for producing same
WO2016174877A1 (en) * 2015-04-30 2016-11-03 三井金属鉱業株式会社 Ito sputtering target material

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102910900B (en) * 2012-10-31 2014-07-09 中南大学 Preparation method of indium tin oxide targets
CN103922703B (en) * 2014-04-15 2015-04-15 广西华锡集团股份有限公司 Indium tin oxide target material and sintering preparation method thereof
JP6291593B2 (en) 2014-11-07 2018-03-14 Ｊｘ金属株式会社 ITO sputtering target, manufacturing method thereof, and manufacturing method of ITO transparent conductive film
CN110002853A (en) * 2019-04-28 2019-07-12 郑州大学 The method that twice sintering process prepares IGZO ceramic target

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11100253A (en) * 1997-09-25 1999-04-13 Tosoh Corp Method for regenerating ito sintered body and application thereof
JP2000233969A (en) * 1998-12-08 2000-08-29 Tosoh Corp Production of ito sputtering target and transparent electrically conductive film
JP2007211265A (en) * 2006-02-07 2007-08-23 Mitsui Mining & Smelting Co Ltd Ito sintered body and ito sputtering target
JP2007230853A (en) * 2006-03-03 2007-09-13 Tosoh Corp Ito powder, its production method and method for producing ito sputtering target

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11100253A (en) * 1997-09-25 1999-04-13 Tosoh Corp Method for regenerating ito sintered body and application thereof
JP2000233969A (en) * 1998-12-08 2000-08-29 Tosoh Corp Production of ito sputtering target and transparent electrically conductive film
JP2007211265A (en) * 2006-02-07 2007-08-23 Mitsui Mining & Smelting Co Ltd Ito sintered body and ito sputtering target
JP2007230853A (en) * 2006-03-03 2007-09-13 Tosoh Corp Ito powder, its production method and method for producing ito sputtering target

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015125588A1 (en) * 2014-02-18 2015-08-27 三井金属鉱業株式会社 Ito sputtering target material and method for producing same
JP5816394B1 (en) * 2014-02-18 2015-11-18 三井金属鉱業株式会社 ITO sputtering target material and manufacturing method thereof
WO2016174877A1 (en) * 2015-04-30 2016-11-03 三井金属鉱業株式会社 Ito sputtering target material
JPWO2016174877A1 (en) * 2015-04-30 2018-02-22 三井金属鉱業株式会社 ITO sputtering target material

Also Published As

Publication number Publication date
JP2009040621A (en) 2009-02-26
TW200925308A (en) 2009-06-16
CN101622208A (en) 2010-01-06
KR20090082267A (en) 2009-07-29

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