WO2009015645A3 - Optoelektronisches bauelement mit einem schichtenstapel - Google Patents

Optoelektronisches bauelement mit einem schichtenstapel Download PDF

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Publication number
WO2009015645A3
WO2009015645A3 PCT/DE2008/001225 DE2008001225W WO2009015645A3 WO 2009015645 A3 WO2009015645 A3 WO 2009015645A3 DE 2008001225 W DE2008001225 W DE 2008001225W WO 2009015645 A3 WO2009015645 A3 WO 2009015645A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
light emitting
emitting diode
semiconductor
doped
Prior art date
Application number
PCT/DE2008/001225
Other languages
English (en)
French (fr)
Other versions
WO2009015645A2 (de
Inventor
Magnus Ahlstedt
Stefan Bader
Johannes Baur
Matthias Sabathil
Martin Strassburg
Ulrich Zehnder
Original Assignee
Osram Opto Semiconductors Gmbh
Magnus Ahlstedt
Stefan Bader
Johannes Baur
Matthias Sabathil
Martin Strassburg
Ulrich Zehnder
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh, Magnus Ahlstedt, Stefan Bader, Johannes Baur, Matthias Sabathil, Martin Strassburg, Ulrich Zehnder filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2009015645A2 publication Critical patent/WO2009015645A2/de
Publication of WO2009015645A3 publication Critical patent/WO2009015645A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

Optoelektronisches Bauelement (20) mit einem Schichtenstapel (10), der zumindest folgendes umfasst: eine Schichtenfolge, die eine Halbleiterleuchtdiode (5) darstellt und zumindest eine erste Leuchtdiodenschicht (2), eine zweite Leuchtdiodenschicht (4) und eine optisch aktive Zone (3) zwischen der ersten (2) und der zweiten Leuchtdiodenschicht (4) umfasst, wobei die beiden Leuchtdiodenschichten (2, 4) jeweils aus einem III-V-Halbleiter-material gebildet sind, das jeweils mindestens eines der Elemente Aluminium, Gallium und Indium und jeweils mindestens eines der Elemente Stickstoff, Phosphor und Arsen enthält, und wobei die erste Leuchtdiodenschicht (2) eine n-dotierte Schicht und die zweite Leuchtdiodenschicht (4) eine p-dotierte Schicht ist, eine silberhaltige metallische Schicht (9) und eine Zwischenschicht (8) aus einem transparenten leitfähigen Oxid, die zwischen der Halbleiterleuchtdiode (15) und der metallischen Schicht (9) angeordnet ist, dadurch gekennzeichnet, dass die metallische Schicht (9) und die Zwischenschicht (8) auf derjenigen Seite der Halbleiterleuchtdiode (15) angeordnet sind, der die p-dotierte zweite Leuchtdiodenschicht (4) zugewandt ist, und dass zwischen der zweiten Leuchtdiodenschicht (4) und der Zwischenschicht (8) zumindest eine hochdotierte erste Halbleiterschicht (7) angeordnet ist, deren Dotierstoffkonzentration größer ist als die Dotierstoffkonzentration der zweiten Leuchtdiodenschicht (4).
PCT/DE2008/001225 2007-07-30 2008-07-24 Optoelektronisches bauelement mit einem schichtenstapel WO2009015645A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007035687.2 2007-07-30
DE200710035687 DE102007035687A1 (de) 2007-07-30 2007-07-30 Optoelektronisches Bauelement mit einem Schichtenstapel

Publications (2)

Publication Number Publication Date
WO2009015645A2 WO2009015645A2 (de) 2009-02-05
WO2009015645A3 true WO2009015645A3 (de) 2009-04-23

Family

ID=40175674

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2008/001225 WO2009015645A2 (de) 2007-07-30 2008-07-24 Optoelektronisches bauelement mit einem schichtenstapel

Country Status (3)

Country Link
DE (1) DE102007035687A1 (de)
TW (1) TW200915621A (de)
WO (1) WO2009015645A2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008027045A1 (de) 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Halbleiterleuchtdiode und Verfahren zur Herstellung einer Halbleiterleuchtdiode
KR101064091B1 (ko) * 2009-02-23 2011-09-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
DE102013104954A1 (de) 2013-05-14 2014-11-20 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE102017002333A1 (de) * 2017-03-13 2018-09-13 Azur Space Solar Power Gmbh Leuchtdiode

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050173724A1 (en) * 2004-02-11 2005-08-11 Heng Liu Group III-nitride based LED having a transparent current spreading layer
DE102005016592A1 (de) * 2004-04-14 2005-11-24 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
DE102004050891A1 (de) * 2004-10-19 2006-04-20 LumiLeds Lighting, U.S., LLC, San Jose Lichtmittierende Halbleitervorrichtung
US20060249736A1 (en) * 2005-05-03 2006-11-09 Samsung Electro-Mechanics Co., Ltd. Nitride semiconductor light emitting device and method of manufacturing the same
DE102005035722A1 (de) * 2005-07-29 2007-02-01 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
WO2007074969A1 (en) * 2005-12-27 2007-07-05 Samsung Electronics Co., Ltd. Group-iii nitride-based light emitting device
JP2008078297A (ja) * 2006-09-20 2008-04-03 Mitsubishi Cable Ind Ltd ＧａＮ系半導体発光素子

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6728281B1 (en) * 2000-02-10 2004-04-27 The Board Of Trustees Of The Leland Stanford Junior University Quantum-dot photon turnstile device
TW493287B (en) * 2001-05-30 2002-07-01 Epistar Corp Light emitting diode structure with non-conductive substrate
US6515308B1 (en) * 2001-12-21 2003-02-04 Xerox Corporation Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection
US8115212B2 (en) * 2004-07-29 2012-02-14 Showa Denko K.K. Positive electrode for semiconductor light-emitting device
US20070108459A1 (en) * 2005-04-15 2007-05-17 Enfocus Engineering Corp Methods of Manufacturing Light Emitting Devices
DE102006015788A1 (de) * 2006-01-27 2007-09-13 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050173724A1 (en) * 2004-02-11 2005-08-11 Heng Liu Group III-nitride based LED having a transparent current spreading layer
DE102005016592A1 (de) * 2004-04-14 2005-11-24 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
DE102004050891A1 (de) * 2004-10-19 2006-04-20 LumiLeds Lighting, U.S., LLC, San Jose Lichtmittierende Halbleitervorrichtung
US20060249736A1 (en) * 2005-05-03 2006-11-09 Samsung Electro-Mechanics Co., Ltd. Nitride semiconductor light emitting device and method of manufacturing the same
DE102005035722A1 (de) * 2005-07-29 2007-02-01 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
WO2007074969A1 (en) * 2005-12-27 2007-07-05 Samsung Electronics Co., Ltd. Group-iii nitride-based light emitting device
JP2008078297A (ja) * 2006-09-20 2008-04-03 Mitsubishi Cable Ind Ltd ＧａＮ系半導体発光素子

Also Published As

Publication number Publication date
TW200915621A (en) 2009-04-01
DE102007035687A1 (de) 2009-02-05
WO2009015645A2 (de) 2009-02-05

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