WO2009011174A1 - 薄膜太陽電池モジュール - Google Patents

薄膜太陽電池モジュール Download PDF

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Publication number
WO2009011174A1
WO2009011174A1 PCT/JP2008/059934 JP2008059934W WO2009011174A1 WO 2009011174 A1 WO2009011174 A1 WO 2009011174A1 JP 2008059934 W JP2008059934 W JP 2008059934W WO 2009011174 A1 WO2009011174 A1 WO 2009011174A1
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WO
WIPO (PCT)
Prior art keywords
cell module
thin film
film solar
solar cell
contact lines
Prior art date
Application number
PCT/JP2008/059934
Other languages
English (en)
French (fr)
Inventor
Yoshiyuki Nasuno
Akira Shimizu
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Priority to CN2008800246273A priority Critical patent/CN101743645B/zh
Priority to EP08776996.4A priority patent/EP2169729A4/en
Priority to US12/668,514 priority patent/US20100180925A1/en
Publication of WO2009011174A1 publication Critical patent/WO2009011174A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02021—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

　セルやコンタクトラインの損傷を抑制することができる薄膜太陽電池モジュールを提供するものである。 　本発明の薄膜太陽電池モジュールは、双方向的に互いに並列接続された複数のセルストリングを備えるセルモジュールを備え、前記セルストリングは、コンタクトラインを通じて互いに直列接続された複数のセルを備え、光源：キセノンランプ、放射照度：１００ｍＷ／ｃｍ2、ＡＭ：１．５、温度：２５°Cという条件下における、前記セルモジュールの出力をＰ（Ｗ）、前記セルストリングの出力をＰｓ（Ｗ）、前記コンタクトラインの面積をＳc（ｃｍ2）としたときに、（Ｐ－Ｐｓ）／Ｓｃが１０．７（ｋＷ／ｃｍ2）以下であり、Ｐｓが１２Ｗ以下であり、Ｐが３８５Ｗ以下であることを特徴とする。
PCT/JP2008/059934 2007-07-13 2008-05-29 薄膜太陽電池モジュール WO2009011174A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008800246273A CN101743645B (zh) 2007-07-13 2008-05-29 薄膜太阳能电池模块
EP08776996.4A EP2169729A4 (en) 2007-07-13 2008-05-29 SOLAR CELL MODULE IN THIN LAYER
US12/668,514 US20100180925A1 (en) 2007-07-13 2008-05-29 Thin-film solar cell module

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-184664 2007-07-13
JP2007184664A JP4411338B2 (ja) 2007-07-13 2007-07-13 薄膜太陽電池モジュール

Publications (1)

Publication Number Publication Date
WO2009011174A1 true WO2009011174A1 (ja) 2009-01-22

Family

ID=40259516

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059934 WO2009011174A1 (ja) 2007-07-13 2008-05-29 薄膜太陽電池モジュール

Country Status (5)

Country Link
US (1) US20100180925A1 (ja)
EP (1) EP2169729A4 (ja)
JP (1) JP4411338B2 (ja)
CN (1) CN101743645B (ja)
WO (1) WO2009011174A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2378562A1 (en) * 2009-01-09 2011-10-19 Sharp Kabushiki Kaisha Thin-film solar cell module
US20120186642A1 (en) * 2009-09-23 2012-07-26 Ecole Polytechnique Federale De Lausanne (Epfl) Solar cell and its production process
CN105917472A (zh) * 2014-01-13 2016-08-31 光城公司 高效率太阳能面板
WO2016209542A1 (en) 2015-06-26 2016-12-29 Intel Corporation Method and apparatus for reducing read latency for a block erasable non-volatile memory

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102376807B (zh) * 2010-08-13 2013-11-27 无锡尚德太阳能电力有限公司 非晶硅太阳电池组件及其制造方法
CN102479843A (zh) * 2010-11-24 2012-05-30 吉富新能源科技(上海)有限公司 拼装式薄膜太阳能电池组成结构
KR101332297B1 (ko) 2011-11-24 2013-11-22 인텔렉추얼디스커버리 주식회사 탄뎀형 집적 광기전력 모듈 및 이의 제조방법
KR20130081484A (ko) * 2012-01-09 2013-07-17 엘지전자 주식회사 박막 태양 전지
US9130102B2 (en) * 2012-05-22 2015-09-08 Intellectual Discovery Co., Ltd. Integrated thin film photovoltaic module and manufacturing method thereof
WO2015045231A1 (ja) * 2013-09-30 2015-04-02 パナソニックＩｐマネジメント株式会社 光電変換装置および当該装置に使用される光電変換ユニット
CN111430481B (zh) * 2020-05-09 2023-10-03 成都中建材光电材料有限公司 碲化镉薄膜太阳能聚光组件及制作方法

Citations (3)

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Publication number Priority date Publication date Assignee Title
JPS5753986A (ja) * 1980-07-25 1982-03-31 Eastman Kodak Co
JP2001068713A (ja) 1999-08-25 2001-03-16 Kanegafuchi Chem Ind Co Ltd 薄膜光電変換モジュール
WO2004064167A1 (ja) * 2003-01-10 2004-07-29 Kaneka Corporation 透光性薄膜太陽電池モジュールおよびその製造方法

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JPS60182757A (ja) * 1984-02-29 1985-09-18 Kanegafuchi Chem Ind Co Ltd 集積型太陽電池
JPH01181577A (ja) * 1988-01-12 1989-07-19 Kanegafuchi Chem Ind Co Ltd 光半導体素子
CA2024662A1 (en) * 1989-09-08 1991-03-09 Robert Oswald Monolithic series and parallel connected photovoltaic module
EP1079441A3 (en) * 1999-08-25 2007-12-26 Kaneka Corporation Thin film photoelectric conversion module and method of manufacturing the same
EP2259338B1 (en) * 1999-09-29 2014-09-17 Kaneka Corporation Method of and apparatus for automatically presoldering the solar battery and soldering a lead wire to the solar battery
US7098395B2 (en) * 2001-03-29 2006-08-29 Kaneka Corporation Thin-film solar cell module of see-through type
JP4201241B2 (ja) * 2001-05-17 2008-12-24 株式会社カネカ 集積型薄膜光電変換モジュールの作製方法
EP1466368A1 (en) * 2002-01-07 2004-10-13 BP Corporation North America Inc. Method of manufacturing thin film photovoltaic modules
US6784358B2 (en) * 2002-11-08 2004-08-31 The Boeing Co. Solar cell structure utilizing an amorphous silicon discrete by-pass diode
EP1521309A1 (de) * 2003-10-02 2005-04-06 Scheuten Glasgroep Serienverschaltung von Solarzellen mit integrierten Halbleiterkörpern, Verfahren zur Herstellung und Photovoltaikmodul mit Serienverschaltung
JP4194468B2 (ja) * 2003-10-10 2008-12-10 シャープ株式会社 太陽電池およびその製造方法
CN2838046Y (zh) * 2005-04-28 2006-11-15 武汉科技学院 柔性太阳能电池组件

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5753986A (ja) * 1980-07-25 1982-03-31 Eastman Kodak Co
JP2001068713A (ja) 1999-08-25 2001-03-16 Kanegafuchi Chem Ind Co Ltd 薄膜光電変換モジュール
WO2004064167A1 (ja) * 2003-01-10 2004-07-29 Kaneka Corporation 透光性薄膜太陽電池モジュールおよびその製造方法

Non-Patent Citations (1)

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Title
See also references of EP2169729A4

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2378562A1 (en) * 2009-01-09 2011-10-19 Sharp Kabushiki Kaisha Thin-film solar cell module
EP2378562A4 (en) * 2009-01-09 2013-08-07 Sharp Kk THIN-FILM SOLAR CELL MODULE
US20120186642A1 (en) * 2009-09-23 2012-07-26 Ecole Polytechnique Federale De Lausanne (Epfl) Solar cell and its production process
CN102668126A (zh) * 2009-09-23 2012-09-12 洛桑联邦理工学院(Epfl) 太阳能电池及其制造方法
CN105917472A (zh) * 2014-01-13 2016-08-31 光城公司 高效率太阳能面板
WO2016209542A1 (en) 2015-06-26 2016-12-29 Intel Corporation Method and apparatus for reducing read latency for a block erasable non-volatile memory

Also Published As

Publication number Publication date
CN101743645A (zh) 2010-06-16
JP4411338B2 (ja) 2010-02-10
US20100180925A1 (en) 2010-07-22
CN101743645B (zh) 2012-01-25
EP2169729A4 (en) 2015-11-18
JP2009021513A (ja) 2009-01-29
EP2169729A1 (en) 2010-03-31

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