WO2009005131A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- WO2009005131A1 WO2009005131A1 PCT/JP2008/062104 JP2008062104W WO2009005131A1 WO 2009005131 A1 WO2009005131 A1 WO 2009005131A1 JP 2008062104 W JP2008062104 W JP 2008062104W WO 2009005131 A1 WO2009005131 A1 WO 2009005131A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor device
- layer
- trench
- periphery
- region
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
- H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
オン抵抗を大幅に低減することが可能な半導体装置を提供する。この半導体装置(11)は、トレンチ(3)の周辺に形成される空乏層(10)でn型エピタキシャル層(2)の隣接するトレンチ(3)間の各領域が塞がれることにより電流通路(9)が遮断される一方、トレンチ(3)の周辺に形成された空乏層(10)の少なくとも一部が消滅することにより電流通路(9)が開くように構成されており、n型エピタキシャル層(2)の隣接するトレンチ(3)間の各領域のうちの所定領域の上面は、上面電極層(7)に対してショットキー接触している。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-176582 | 2007-07-04 | ||
JP2007176582A JP5285242B2 (ja) | 2007-07-04 | 2007-07-04 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009005131A1 true WO2009005131A1 (ja) | 2009-01-08 |
Family
ID=40226172
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/062104 WO2009005131A1 (ja) | 2007-07-04 | 2008-07-03 | 半導体装置 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5285242B2 (ja) |
WO (1) | WO2009005131A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023042359A1 (ja) | 2021-09-17 | 2023-03-23 | ヌヴォトンテクノロジージャパン株式会社 | 半導体装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03289141A (ja) * | 1990-04-06 | 1991-12-19 | Nissan Motor Co Ltd | 半導体装置の製造方法 |
JP2004511910A (ja) * | 2000-10-06 | 2004-04-15 | ゼネラル セミコンダクター,インク. | トレンチショットキー整流器が組み込まれたトレンチ二重拡散金属酸化膜半導体トランジスタ |
US20060011962A1 (en) * | 2003-12-30 | 2006-01-19 | Kocon Christopher B | Accumulation device with charge balance structure and method of forming the same |
JP2007134469A (ja) * | 2005-06-22 | 2007-05-31 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置およびその製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0339962A3 (en) * | 1988-04-27 | 1990-09-26 | General Electric Company | Field effect semiconductor device |
JP3214242B2 (ja) * | 1994-08-01 | 2001-10-02 | 日産自動車株式会社 | 半導体装置 |
JP2001168333A (ja) * | 1999-09-30 | 2001-06-22 | Toshiba Corp | トレンチゲート付き半導体装置 |
JP2004134547A (ja) * | 2002-10-10 | 2004-04-30 | Hitachi Ltd | 半導体装置 |
JP4903055B2 (ja) * | 2003-12-30 | 2012-03-21 | フェアチャイルド・セミコンダクター・コーポレーション | パワー半導体デバイスおよびその製造方法 |
JP2005286059A (ja) * | 2004-03-29 | 2005-10-13 | Sanyo Electric Co Ltd | 半導体装置 |
-
2007
- 2007-07-04 JP JP2007176582A patent/JP5285242B2/ja active Active
-
2008
- 2008-07-03 WO PCT/JP2008/062104 patent/WO2009005131A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03289141A (ja) * | 1990-04-06 | 1991-12-19 | Nissan Motor Co Ltd | 半導体装置の製造方法 |
JP2004511910A (ja) * | 2000-10-06 | 2004-04-15 | ゼネラル セミコンダクター,インク. | トレンチショットキー整流器が組み込まれたトレンチ二重拡散金属酸化膜半導体トランジスタ |
US20060011962A1 (en) * | 2003-12-30 | 2006-01-19 | Kocon Christopher B | Accumulation device with charge balance structure and method of forming the same |
JP2007134469A (ja) * | 2005-06-22 | 2007-05-31 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2009016571A (ja) | 2009-01-22 |
JP5285242B2 (ja) | 2013-09-11 |
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