WO2009005131A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2009005131A1
WO2009005131A1 PCT/JP2008/062104 JP2008062104W WO2009005131A1 WO 2009005131 A1 WO2009005131 A1 WO 2009005131A1 JP 2008062104 W JP2008062104 W JP 2008062104W WO 2009005131 A1 WO2009005131 A1 WO 2009005131A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
layer
trench
periphery
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/062104
Other languages
English (en)
French (fr)
Inventor
Masaru Takaishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of WO2009005131A1 publication Critical patent/WO2009005131A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/647—Schottky drain or source electrodes for IGFETs

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

　オン抵抗を大幅に低減することが可能な半導体装置を提供する。この半導体装置（１１）は、トレンチ（３）の周辺に形成される空乏層（１０）でｎ型エピタキシャル層（２）の隣接するトレンチ（３）間の各領域が塞がれることにより電流通路（９）が遮断される一方、トレンチ（３）の周辺に形成された空乏層（１０）の少なくとも一部が消滅することにより電流通路（９）が開くように構成されており、ｎ型エピタキシャル層（２）の隣接するトレンチ（３）間の各領域のうちの所定領域の上面は、上面電極層（７）に対してショットキー接触している。
PCT/JP2008/062104 2007-07-04 2008-07-03 半導体装置 Ceased WO2009005131A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007176582A JP5285242B2 (ja) 2007-07-04 2007-07-04 半導体装置
JP2007-176582 2007-07-04

Publications (1)

Publication Number Publication Date
WO2009005131A1 true WO2009005131A1 (ja) 2009-01-08

Family

ID=40226172

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062104 Ceased WO2009005131A1 (ja) 2007-07-04 2008-07-03 半導体装置

Country Status (2)

Country Link
JP (1) JP5285242B2 (ja)
WO (1) WO2009005131A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102434890B1 (ko) * 2021-09-17 2022-08-22 누보톤 테크놀로지 재팬 가부시키가이샤 반도체 장치
JP2023136033A (ja) * 2022-03-16 2023-09-29 株式会社東芝 半導体装置の制御方法、および半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03289141A (ja) * 1990-04-06 1991-12-19 Nissan Motor Co Ltd 半導体装置の製造方法
JP2004511910A (ja) * 2000-10-06 2004-04-15 ゼネラル　セミコンダクター，インク． トレンチショットキー整流器が組み込まれたトレンチ二重拡散金属酸化膜半導体トランジスタ
US20060011962A1 (en) * 2003-12-30 2006-01-19 Kocon Christopher B Accumulation device with charge balance structure and method of forming the same
JP2007134469A (ja) * 2005-06-22 2007-05-31 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置およびその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0339962A3 (en) * 1988-04-27 1990-09-26 General Electric Company Field effect semiconductor device
JP3214242B2 (ja) * 1994-08-01 2001-10-02 日産自動車株式会社 半導体装置
JP2001168333A (ja) * 1999-09-30 2001-06-22 Toshiba Corp トレンチゲート付き半導体装置
JP2004134547A (ja) * 2002-10-10 2004-04-30 Hitachi Ltd 半導体装置
JP4903055B2 (ja) * 2003-12-30 2012-03-21 フェアチャイルド・セミコンダクター・コーポレーション パワー半導体デバイスおよびその製造方法
JP2005286059A (ja) * 2004-03-29 2005-10-13 Sanyo Electric Co Ltd 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03289141A (ja) * 1990-04-06 1991-12-19 Nissan Motor Co Ltd 半導体装置の製造方法
JP2004511910A (ja) * 2000-10-06 2004-04-15 ゼネラル　セミコンダクター，インク． トレンチショットキー整流器が組み込まれたトレンチ二重拡散金属酸化膜半導体トランジスタ
US20060011962A1 (en) * 2003-12-30 2006-01-19 Kocon Christopher B Accumulation device with charge balance structure and method of forming the same
JP2007134469A (ja) * 2005-06-22 2007-05-31 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置およびその製造方法

Also Published As

Publication number Publication date
JP2009016571A (ja) 2009-01-22
JP5285242B2 (ja) 2013-09-11

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