WO2009001649A1 - Ｅｓｄ保護素子の製造方法 - Google Patents

Ｅｓｄ保護素子の製造方法 Download PDF

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Publication number
WO2009001649A1
WO2009001649A1 PCT/JP2008/060016 JP2008060016W WO2009001649A1 WO 2009001649 A1 WO2009001649 A1 WO 2009001649A1 JP 2008060016 W JP2008060016 W JP 2008060016W WO 2009001649 A1 WO2009001649 A1 WO 2009001649A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
over
conductive particles
resin
protection element
Prior art date
Application number
PCT/JP2008/060016
Other languages
English (en)
French (fr)
Inventor
Atsushi Sakurai
Yutaka Takeshima
Original Assignee
Murata Manufacturing Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co., Ltd. filed Critical Murata Manufacturing Co., Ltd.
Priority to JP2009520410A priority Critical patent/JP4844673B2/ja
Publication of WO2009001649A1 publication Critical patent/WO2009001649A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
    • H01T4/00—Overvoltage arresters using spark gaps
    • H01T4/10—Overvoltage arresters using spark gaps having a single gap or a plurality of gaps in parallel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/1013—Thin film varistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
    • H01T4/00—Overvoltage arresters using spark gaps
    • H01T4/08—Overvoltage arresters using spark gaps structurally associated with protected apparatus

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)

Abstract

　微細な導電性粒子が樹脂中に均一に分散されたＥＳＤ吸収部を備え、低い電圧で動作し、かつ、動作の安定性に優れたＥＳＤ保護素子を効率よく製造することを可能にする。 　基板１上の一対の電極３ａ，３ｂ間に形成された、樹脂中に導電性粒子を存在させてなるＥＳＤ吸収部６を備えたＥＳＤ保護素子１０の製造工程で、ＥＳＤ吸収部６を形成するにあたって、基板１上に金属膜を成膜し、金属膜を熱処理して凝集させることにより、基板１上に導電性粒子５を形成した後、基板上に一対の電極を形成する前に、または、基板上に一対の電極を形成した後に、導電性粒子上に樹脂４を供給して、導電性粒子５を樹脂４により覆う。 　基板上に前記導電性粒子を形成するにあたって、 　導電性粒子を基板上に島状に形成することにより、基板上に導電性粒子を２次元的に分布させる。
PCT/JP2008/060016 2007-06-22 2008-05-30 Ｅｓｄ保護素子の製造方法 WO2009001649A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009520410A JP4844673B2 (ja) 2007-06-22 2008-05-30 Ｅｓｄ保護素子の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-164517 2007-06-22
JP2007164517 2007-06-22

Publications (1)

Publication Number Publication Date
WO2009001649A1 true WO2009001649A1 (ja) 2008-12-31

Family

ID=40185471

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060016 WO2009001649A1 (ja) 2007-06-22 2008-05-30 Ｅｓｄ保護素子の製造方法

Country Status (2)

Country Link
JP (1) JP4844673B2 (ja)
WO (1) WO2009001649A1 (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010109311A (ja) * 2008-09-30 2010-05-13 Tdk Corp 複合電子部品及びその接続構造
JP2010186742A (ja) * 2009-01-14 2010-08-26 Tdk Corp 静電気対策素子及びその複合電子部品、並びに、複合基板の製造方法及び静電気対策素子の製造方法
WO2011040435A1 (ja) * 2009-09-30 2011-04-07 株式会社村田製作所 Ｅｓｄ保護デバイスおよびその製造方法
JP2011086523A (ja) * 2009-10-16 2011-04-28 Tabuchi Electric Co Ltd サージ吸収素子
JP2011187439A (ja) * 2010-02-15 2011-09-22 Murata Mfg Co Ltd Ｅｓｄ保護装置
JP2013098259A (ja) * 2011-10-28 2013-05-20 Tdk Corp 複合電子部品
JP2013098258A (ja) * 2011-10-28 2013-05-20 Tdk Corp 複合電子部品及びその製造方法
KR101323145B1 (ko) 2011-10-27 2013-10-30 (주)아트로닉스 정전기 보호용 반도체 소자의 제조방법
JP2014044931A (ja) * 2012-08-27 2014-03-13 Samsung Electro-Mechanics Co Ltd 静電放電保護素子及びその製造方法
WO2024206934A1 (en) * 2023-03-31 2024-10-03 Ppc Broadband, Inc. Printed circuit spark gap with enhanced spark over voltage to protect an electronic device connected to the spark gap

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001523040A (ja) * 1997-11-08 2001-11-20 リッテルフューズ インコーポレイテッド 過電圧保護ポリマー組成物
JP2004014466A (ja) * 2002-06-11 2004-01-15 Mitsubishi Materials Corp チップ型サージアブソーバ及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001523040A (ja) * 1997-11-08 2001-11-20 リッテルフューズ インコーポレイテッド 過電圧保護ポリマー組成物
JP2004014466A (ja) * 2002-06-11 2004-01-15 Mitsubishi Materials Corp チップ型サージアブソーバ及びその製造方法

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010109311A (ja) * 2008-09-30 2010-05-13 Tdk Corp 複合電子部品及びその接続構造
JP2010186742A (ja) * 2009-01-14 2010-08-26 Tdk Corp 静電気対策素子及びその複合電子部品、並びに、複合基板の製造方法及び静電気対策素子の製造方法
KR101298992B1 (ko) * 2009-09-30 2013-08-23 가부시키가이샤 무라타 세이사쿠쇼 Ｅｓｄ 보호 디바이스 및 그 제조방법
WO2011040435A1 (ja) * 2009-09-30 2011-04-07 株式会社村田製作所 Ｅｓｄ保護デバイスおよびその製造方法
CN102576981A (zh) * 2009-09-30 2012-07-11 株式会社村田制作所 Esd保护器件及其制造方法
JP4984011B2 (ja) * 2009-09-30 2012-07-25 株式会社村田製作所 Ｅｓｄ保護デバイスおよびその製造方法
US8514536B2 (en) 2009-09-30 2013-08-20 Murata Manufacturing Co., Ltd. ESD protection device and manufacturing method therefor
JP2011086523A (ja) * 2009-10-16 2011-04-28 Tabuchi Electric Co Ltd サージ吸収素子
JP2011187439A (ja) * 2010-02-15 2011-09-22 Murata Mfg Co Ltd Ｅｓｄ保護装置
KR101323145B1 (ko) 2011-10-27 2013-10-30 (주)아트로닉스 정전기 보호용 반도체 소자의 제조방법
JP2013098258A (ja) * 2011-10-28 2013-05-20 Tdk Corp 複合電子部品及びその製造方法
JP2013098259A (ja) * 2011-10-28 2013-05-20 Tdk Corp 複合電子部品
KR101376584B1 (ko) * 2011-10-28 2014-03-20 티디케이가부시기가이샤 복합 전자 부품 및 그 제조 방법
JP2014044931A (ja) * 2012-08-27 2014-03-13 Samsung Electro-Mechanics Co Ltd 静電放電保護素子及びその製造方法
US9153957B2 (en) 2012-08-27 2015-10-06 Samsung Electro-Mechanics Co., Ltd. Electrostatic discharge protection device and method for manufacturing the same
WO2024206934A1 (en) * 2023-03-31 2024-10-03 Ppc Broadband, Inc. Printed circuit spark gap with enhanced spark over voltage to protect an electronic device connected to the spark gap

Also Published As

Publication number Publication date
JPWO2009001649A1 (ja) 2010-08-26
JP4844673B2 (ja) 2011-12-28

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