WO2009001488A1 - ダイアフラム構造及び音響センサ - Google Patents

ダイアフラム構造及び音響センサ Download PDF

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Publication number
WO2009001488A1
WO2009001488A1 PCT/JP2007/073881 JP2007073881W WO2009001488A1 WO 2009001488 A1 WO2009001488 A1 WO 2009001488A1 JP 2007073881 W JP2007073881 W JP 2007073881W WO 2009001488 A1 WO2009001488 A1 WO 2009001488A1
Authority
WO
WIPO (PCT)
Prior art keywords
acoustic sensor
diaphragm structure
hole
substrate
electrode film
Prior art date
Application number
PCT/JP2007/073881
Other languages
English (en)
French (fr)
Inventor
Yuichi Miyoshi
Yusuke Takeuchi
Tohru Yamaoka
Hiroshi Ogura
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to CN200780053193A priority Critical patent/CN101682821A/zh
Priority to EP07859774A priority patent/EP2173114A4/en
Publication of WO2009001488A1 publication Critical patent/WO2009001488A1/ja
Priority to US12/630,179 priority patent/US8146437B2/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0001—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
    • G01L9/0008—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations
    • G01L9/0016—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations of a diaphragm
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials

Abstract

　基板１０１の上面から底面まで貫通するように貫通孔１０２が形成されている。基板１０１上には貫通孔１０２を覆うように振動電極膜１０３が形成されている。貫通孔１０２上に位置する部分の振動電極膜１０３がダイアフラム１０４として機能する。基板１０１の上面における貫通孔１０２の開口形状は六角形である。
PCT/JP2007/073881 2007-06-22 2007-12-11 ダイアフラム構造及び音響センサ WO2009001488A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200780053193A CN101682821A (zh) 2007-06-22 2007-12-11 振动膜构造及声波传感器
EP07859774A EP2173114A4 (en) 2007-06-22 2007-12-11 DIAPHRAGM STRUCTURE AND ACOUSTIC SENSOR
US12/630,179 US8146437B2 (en) 2007-06-22 2009-12-03 Diaphragm structure and MEMS device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-164647 2007-06-22
JP2007164647 2007-06-22

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/630,179 Continuation US8146437B2 (en) 2007-06-22 2009-12-03 Diaphragm structure and MEMS device

Publications (1)

Publication Number Publication Date
WO2009001488A1 true WO2009001488A1 (ja) 2008-12-31

Family

ID=40185318

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/073881 WO2009001488A1 (ja) 2007-06-22 2007-12-11 ダイアフラム構造及び音響センサ

Country Status (6)

Country Link
US (1) US8146437B2 (ja)
EP (1) EP2173114A4 (ja)
JP (1) JP2009033698A (ja)
CN (1) CN101682821A (ja)
TW (1) TW200901803A (ja)
WO (1) WO2009001488A1 (ja)

Families Citing this family (8)

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Publication number Priority date Publication date Assignee Title
TWI428030B (zh) * 2009-12-08 2014-02-21 Ind Tech Res Inst 薄膜結構及聲音感測裝置
JP5267627B2 (ja) * 2011-08-30 2013-08-21 オムロン株式会社 音響センサ及びその製造方法
JP2016095284A (ja) * 2014-11-17 2016-05-26 セイコーエプソン株式会社 電子デバイス、物理量センサー、圧力センサー、高度計、電子機器および移動体
US10470674B2 (en) 2016-03-17 2019-11-12 Intel Corporation Technologies for a fabric acoustic sensor
US9869598B1 (en) * 2016-06-24 2018-01-16 Honeywell International Inc. Low cost small force sensor
DK3279621T5 (da) * 2016-08-26 2021-05-31 Sonion Nederland Bv Vibrationssensor med lavfrekvens roll-off responskurve
KR101776752B1 (ko) 2016-09-02 2017-09-08 현대자동차 주식회사 마이크로폰
US11649717B2 (en) 2018-09-17 2023-05-16 Saudi Arabian Oil Company Systems and methods for sensing downhole cement sheath parameters

Citations (4)

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Publication number Priority date Publication date Assignee Title
JPS60138434A (ja) * 1983-12-27 1985-07-23 Fuji Electric Co Ltd 半導体形静電容量式圧力センサの製造方法
JPH08233765A (ja) * 1995-03-01 1996-09-13 Ricoh Co Ltd マイクロセンサ
JPH1073505A (ja) * 1996-08-30 1998-03-17 Matsushita Electric Works Ltd 半導体装置の製造方法
JP2007067659A (ja) * 2005-08-30 2007-03-15 Yamaha Corp コンデンサマイクロホン及びコンデンサマイクロホンの製造方法

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US5146435A (en) * 1989-12-04 1992-09-08 The Charles Stark Draper Laboratory, Inc. Acoustic transducer
US5289721A (en) 1990-09-10 1994-03-01 Nippondenso Co., Ltd. Semiconductor pressure sensor
DE4238571C1 (de) * 1992-11-16 1994-06-01 Kernforschungsz Karlsruhe Verfahren zur Herstellung von durch einen Rahmen aufgespannte Membranen
TW457504B (en) * 1999-06-25 2001-10-01 Tokyo Sensor Co Ltd Elongated shape switch and its manufacturing method
US6601452B2 (en) 2000-06-05 2003-08-05 Denso Corporation Semiconductor pressure sensor having rounded corner portion of diaphragm
JP3873630B2 (ja) 2001-01-29 2007-01-24 セイコーエプソン株式会社 コンデンサマイクロホンの製造方法
US7152289B2 (en) * 2002-09-25 2006-12-26 Intel Corporation Method for forming bulk resonators silicon <110> substrate
US7497962B2 (en) 2004-08-06 2009-03-03 Canon Kabushiki Kaisha Method of manufacturing liquid discharge head and method of manufacturing substrate for liquid discharge head
US7373835B2 (en) * 2005-01-31 2008-05-20 Sanyo Electric Industries, Ltd. Semiconductor sensor
JP2007097116A (ja) * 2005-08-29 2007-04-12 Sanyo Electric Co Ltd センサ
KR20080031467A (ko) 2005-08-30 2008-04-08 야마하 가부시키가이샤 컨덴서 마이크로폰 및 컨덴서 마이크로폰의 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60138434A (ja) * 1983-12-27 1985-07-23 Fuji Electric Co Ltd 半導体形静電容量式圧力センサの製造方法
JPH08233765A (ja) * 1995-03-01 1996-09-13 Ricoh Co Ltd マイクロセンサ
JPH1073505A (ja) * 1996-08-30 1998-03-17 Matsushita Electric Works Ltd 半導体装置の製造方法
JP2007067659A (ja) * 2005-08-30 2007-03-15 Yamaha Corp コンデンサマイクロホン及びコンデンサマイクロホンの製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2173114A4 *

Also Published As

Publication number Publication date
TW200901803A (en) 2009-01-01
US20100077863A1 (en) 2010-04-01
CN101682821A (zh) 2010-03-24
US8146437B2 (en) 2012-04-03
EP2173114A1 (en) 2010-04-07
EP2173114A4 (en) 2011-10-19
JP2009033698A (ja) 2009-02-12

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