WO2008155087A3 - Plasmareaktor und verfahren zur herstellung einkristalliner diamantschichten - Google Patents
Plasmareaktor und verfahren zur herstellung einkristalliner diamantschichten Download PDFInfo
- Publication number
- WO2008155087A3 WO2008155087A3 PCT/EP2008/004840 EP2008004840W WO2008155087A3 WO 2008155087 A3 WO2008155087 A3 WO 2008155087A3 EP 2008004840 W EP2008004840 W EP 2008004840W WO 2008155087 A3 WO2008155087 A3 WO 2008155087A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- diamond layers
- plasma reactor
- production
- monocrystalline diamond
- layers
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32321—Discharge generated by other radiation
- H01J37/32339—Discharge generated by other radiation using electromagnetic radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
- H01J37/32027—DC powered
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Die Erfindung betrifft einen Plasmareaktor, mit welchem sich großflächig einkristalline Diamantschichten auf Wafern herstellen lassen. Die Erfindung betrifft außerdem ein Verfahren zur Herstellung solcher Diamantschichten.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/664,935 US20110005454A1 (en) | 2007-06-20 | 2008-06-16 | Plasma Reactor, and Method for the Production of Monocrystalline Diamond Layers |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007028293.3 | 2007-06-20 | ||
DE102007028293A DE102007028293B4 (de) | 2007-06-20 | 2007-06-20 | Plasmareaktor, dessen Verwendung und Verfahren zur Herstellung einkristalliner Diamantschichten |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008155087A2 WO2008155087A2 (de) | 2008-12-24 |
WO2008155087A3 true WO2008155087A3 (de) | 2009-03-19 |
Family
ID=39745623
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2008/004840 WO2008155087A2 (de) | 2007-06-20 | 2008-06-16 | Plasmareaktor und verfahren zur herstellung einkristalliner diamantschichten |
Country Status (3)
Country | Link |
---|---|
US (1) | US20110005454A1 (de) |
DE (1) | DE102007028293B4 (de) |
WO (1) | WO2008155087A2 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010023952A1 (de) | 2010-06-16 | 2011-12-22 | Universität Augsburg | Verfahren zum Herstellen von Diamantschichten und mit dem Verfahren hergestellte Diamanten |
JP5821145B2 (ja) * | 2011-08-28 | 2015-11-24 | イマジニアリング株式会社 | プラズマ処理装置 |
EP3309815B1 (de) * | 2016-10-12 | 2019-03-20 | Meyer Burger (Germany) AG | Plasmabehandlungsvorrichtung mit zwei, miteinander gekoppelten mikrowellenplasmaquellen sowie verfahren zum betreiben einer solchen plasmabehandlungsvorrichtung |
US9767992B1 (en) * | 2017-02-09 | 2017-09-19 | Lyten, Inc. | Microwave chemical processing reactor |
DE102017205417A1 (de) | 2017-03-30 | 2018-10-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Ausbildung einer mit poly- oder einkristallinem Diamant gebildeten Schicht |
EP3737299B1 (de) | 2018-01-08 | 2023-09-06 | Russell D. Petranto | Flexible, kanülierte implantate für hand und fuss |
US10687952B2 (en) | 2018-01-08 | 2020-06-23 | Russell D. Petranto | Flexible, cannulated implants for the hand and foot and methods of implanting flexible implants |
US20190244793A1 (en) * | 2018-02-05 | 2019-08-08 | Lam Research Corporation | Tapered upper electrode for uniformity control in plasma processing |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4620893A (en) * | 1983-07-05 | 1986-11-04 | Nextral | Apparatus for the plasma treatment of disk-shaped substrates |
JPH0789794A (ja) * | 1993-09-24 | 1995-04-04 | Kobe Steel Ltd | 高配向性ダイヤモンド薄膜形成方法及び装置 |
JPH07118860A (ja) * | 1993-10-22 | 1995-05-09 | Nippon Koshuha Kk | 対向電極型マイクロ波プラズマ処理装置および処理方法 |
GB2300425A (en) * | 1995-05-01 | 1996-11-06 | Kobe Steel Europ Ltd | Nucleation of diamond films using an electrode |
JP2002371367A (ja) * | 2001-06-19 | 2002-12-26 | Kochi Univ Of Technology | プラズマ処理方法及びその装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3728465B2 (ja) * | 1994-11-25 | 2005-12-21 | 株式会社神戸製鋼所 | 単結晶ダイヤモンド膜の形成方法 |
US5753045A (en) * | 1995-01-25 | 1998-05-19 | Balzers Aktiengesellschaft | Vacuum treatment system for homogeneous workpiece processing |
US5571577A (en) * | 1995-04-07 | 1996-11-05 | Board Of Trustees Operating Michigan State University | Method and apparatus for plasma treatment of a surface |
DE19600223A1 (de) * | 1996-01-05 | 1997-07-17 | Ralf Dr Dipl Phys Spitzl | Vorrichtung zur Erzeugung von Plasmen mittels Mikrowellen |
US5858477A (en) * | 1996-12-10 | 1999-01-12 | Akashic Memories Corporation | Method for producing recording media having protective overcoats of highly tetrahedral amorphous carbon |
US6357385B1 (en) * | 1997-01-29 | 2002-03-19 | Tadahiro Ohmi | Plasma device |
DE19802971C2 (de) * | 1998-01-27 | 1999-12-02 | Fraunhofer Ges Forschung | Plasmareaktor |
JP4014300B2 (ja) * | 1998-06-19 | 2007-11-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
DE10320133B4 (de) * | 2003-05-06 | 2011-02-10 | Universität Augsburg | Verfahren zur Herstellung von einkristallinen oder quasi-einkristallinen Diamantschichten und auf einem Körper angeordnete einkristalline oder quasi-einkristalline Diamantschicht |
US20060225654A1 (en) * | 2005-03-29 | 2006-10-12 | Fink Steven T | Disposable plasma reactor materials and methods |
US20080188062A1 (en) * | 2007-02-02 | 2008-08-07 | Chi-Lin Chen | Method of forming microcrystalline silicon film |
-
2007
- 2007-06-20 DE DE102007028293A patent/DE102007028293B4/de not_active Expired - Fee Related
-
2008
- 2008-06-16 WO PCT/EP2008/004840 patent/WO2008155087A2/de active Application Filing
- 2008-06-16 US US12/664,935 patent/US20110005454A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4620893A (en) * | 1983-07-05 | 1986-11-04 | Nextral | Apparatus for the plasma treatment of disk-shaped substrates |
JPH0789794A (ja) * | 1993-09-24 | 1995-04-04 | Kobe Steel Ltd | 高配向性ダイヤモンド薄膜形成方法及び装置 |
JPH07118860A (ja) * | 1993-10-22 | 1995-05-09 | Nippon Koshuha Kk | 対向電極型マイクロ波プラズマ処理装置および処理方法 |
GB2300425A (en) * | 1995-05-01 | 1996-11-06 | Kobe Steel Europ Ltd | Nucleation of diamond films using an electrode |
JP2002371367A (ja) * | 2001-06-19 | 2002-12-26 | Kochi Univ Of Technology | プラズマ処理方法及びその装置 |
Non-Patent Citations (2)
Title |
---|
BARRAT S ET AL: "Diamond deposition by chemical vapor deposition process: Study of the bias enhanced nucleation step", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 84, no. 4, 15 August 1998 (1998-08-15), pages 1870 - 1880, XP012045670, ISSN: 0021-8979 * |
YAN ET AL: "Microwave plasma chemical vapor deposition of cone-like structure of diamond/SiC/Si on Si (100)", DIAMOND AND RELATED MATERIALS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 14, no. 11-12, 1 November 2005 (2005-11-01), pages 1770 - 1775, XP005486397, ISSN: 0925-9635 * |
Also Published As
Publication number | Publication date |
---|---|
US20110005454A1 (en) | 2011-01-13 |
DE102007028293A1 (de) | 2009-01-02 |
WO2008155087A2 (de) | 2008-12-24 |
DE102007028293B4 (de) | 2009-09-03 |
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