WO2008153155A1 - パターン形成用表面処理剤、及び該処理剤を用いたパターン形成方法 - Google Patents
パターン形成用表面処理剤、及び該処理剤を用いたパターン形成方法 Download PDFInfo
- Publication number
- WO2008153155A1 WO2008153155A1 PCT/JP2008/060908 JP2008060908W WO2008153155A1 WO 2008153155 A1 WO2008153155 A1 WO 2008153155A1 JP 2008060908 W JP2008060908 W JP 2008060908W WO 2008153155 A1 WO2008153155 A1 WO 2008153155A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- resist pattern
- treatment agent
- pattern
- surface treatment
- resist
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/664,570 US20100183978A1 (en) | 2007-06-15 | 2008-06-13 | Surface-treating agent for pattern formation and pattern forming method using the treating agent |
EP08777219A EP2159641A1 (en) | 2007-06-15 | 2008-06-13 | Surface treatment agent for forming pattern and pattern forming method using the treatment agent |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-158839 | 2007-06-15 | ||
JP2007158839 | 2007-06-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008153155A1 true WO2008153155A1 (ja) | 2008-12-18 |
Family
ID=40129758
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/060908 WO2008153155A1 (ja) | 2007-06-15 | 2008-06-13 | パターン形成用表面処理剤、及び該処理剤を用いたパターン形成方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20100183978A1 (ja) |
EP (1) | EP2159641A1 (ja) |
JP (1) | JP2009020510A (ja) |
KR (1) | KR20100030616A (ja) |
WO (1) | WO2008153155A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5222111B2 (ja) * | 2008-11-26 | 2013-06-26 | 東京応化工業株式会社 | レジスト表面改質液及びこれを利用したレジストパターン形成方法 |
TWI403520B (zh) * | 2009-05-25 | 2013-08-01 | Shinetsu Chemical Co | 光阻改質用組成物及圖案形成方法 |
JP5516200B2 (ja) * | 2009-08-05 | 2014-06-11 | 信越化学工業株式会社 | パターン形成方法、化学増幅ポジ型レジスト材料、及び、レジスト変性用組成物 |
JP2011107690A (ja) * | 2009-10-21 | 2011-06-02 | Sumitomo Chemical Co Ltd | レジストパターンの製造方法 |
KR101941908B1 (ko) * | 2011-12-16 | 2019-01-24 | 후지필름 가부시키가이샤 | 레지스트 박리액 및 레지스트 박리 방법 |
JP6448903B2 (ja) * | 2012-12-31 | 2019-01-09 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | イオン注入法 |
JP6122754B2 (ja) * | 2013-09-30 | 2017-04-26 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法、及び電子デバイスの製造方法 |
JP6349408B2 (ja) * | 2014-09-30 | 2018-06-27 | 富士フイルム株式会社 | パターン形成方法、レジストパターン、及び、電子デバイスの製造方法 |
CN106716257B (zh) * | 2014-09-30 | 2019-12-24 | 富士胶片株式会社 | 图案形成方法、抗蚀剂图案及电子元件的制造方法 |
KR101888886B1 (ko) * | 2014-09-30 | 2018-08-16 | 후지필름 가부시키가이샤 | 패턴 형성 방법, 상층막 형성용 조성물, 레지스트 패턴, 및 전자 디바이스의 제조 방법 |
WO2016136354A1 (ja) * | 2015-02-26 | 2016-09-01 | 富士フイルム株式会社 | パターン形成方法、レジストパターン、電子デバイスの製造方法、及び、電子デバイス |
JP6415374B2 (ja) * | 2015-03-31 | 2018-10-31 | 東京応化工業株式会社 | フォトリソグラフィ用現像液及びレジストパターン形成方法 |
KR101982559B1 (ko) * | 2015-05-29 | 2019-05-27 | 후지필름 가부시키가이샤 | 패턴 형성 방법, 레지스트 패턴, 전자 디바이스의 제조 방법, 및 상층막 형성용 조성물 |
TW202305924A (zh) * | 2021-06-24 | 2023-02-01 | 日商東京威力科創股份有限公司 | 基板處理方法及基板處理系統 |
Citations (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3779778A (en) | 1972-02-09 | 1973-12-18 | Minnesota Mining & Mfg | Photosolubilizable compositions and elements |
US3849137A (en) | 1971-10-12 | 1974-11-19 | Basf Ag | Lithographic printing plates and photoresists comprising a photosensitive polymer |
JPS55164824A (en) | 1979-06-05 | 1980-12-22 | Basf Ag | Positiveeprocessing layerrtype transfer print material |
EP0126712A1 (de) | 1983-05-18 | 1984-11-28 | Ciba-Geigy Ag | Härtbare Zusammensetzung und deren Verwendung |
JPS61226746A (ja) | 1985-03-30 | 1986-10-08 | Japan Synthetic Rubber Co Ltd | 半導体集積回路製造用のスピンコート用レジスト組成物 |
JPS61226745A (ja) | 1985-03-30 | 1986-10-08 | Japan Synthetic Rubber Co Ltd | 半導体集積回路製造用のスピンコート用レジスト組成物 |
JPS6236663A (ja) | 1985-08-12 | 1987-02-17 | Mitsubishi Chem Ind Ltd | ナフトキノンジアジド系化合物及び該化合物を含有するポジ型フオトレジスト組成物 |
JPS6269263A (ja) | 1985-09-24 | 1987-03-30 | Toshiba Corp | 感光性組成物 |
JPS62153853A (ja) | 1985-12-27 | 1987-07-08 | Toshiba Corp | 感光性組成物 |
JPS62170950A (ja) | 1986-01-23 | 1987-07-28 | Fuji Photo Film Co Ltd | 感光性組成物 |
JPS6326653A (ja) | 1986-07-21 | 1988-02-04 | Tosoh Corp | フオトレジスト材 |
JPS6334540A (ja) | 1986-07-30 | 1988-02-15 | Mitsubishi Chem Ind Ltd | ポジ型フオトレジスト組成物 |
JPS63146029A (ja) | 1986-12-10 | 1988-06-18 | Toshiba Corp | 感光性組成物 |
JPS63146038A (ja) | 1986-12-10 | 1988-06-18 | Toshiba Corp | 感光性組成物 |
JPS63163452A (ja) | 1986-12-17 | 1988-07-06 | チバ−ガイギー アクチェンゲゼルシャフト | 画像形成方法 |
DE3914407A1 (de) | 1989-04-29 | 1990-10-31 | Basf Ag | Strahlungsempfindliche polymere und positiv arbeitendes aufzeichnungsmaterial |
US5294511A (en) | 1990-01-16 | 1994-03-15 | Fuji Photo Film Co., Ltd. | Photosensitive composition |
US5296330A (en) | 1991-08-30 | 1994-03-22 | Ciba-Geigy Corp. | Positive photoresists containing quinone diazide photosensitizer, alkali-soluble resin and tetra(hydroxyphenyl) alkane additive |
US5360692A (en) | 1992-06-04 | 1994-11-01 | Fuji Photo Film Co., Ltd. | Positive type 1,2-naphthoquinonediazide photoresist composition containing benzotriazole light absorbing agent |
US5405720A (en) | 1985-08-07 | 1995-04-11 | Japan Synthetic Rubber Co., Ltd. | Radiation-sensitive composition containing 1,2 quinonediazide compound, alkali-soluble resin and monooxymonocarboxylic acid ester solvent |
JPH07230165A (ja) | 1993-06-30 | 1995-08-29 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト組成物 |
JPH0862834A (ja) | 1994-08-22 | 1996-03-08 | Mitsubishi Chem Corp | フォトレジスト組成物 |
US5529881A (en) | 1994-03-17 | 1996-06-25 | Fuji Photo Film Co., Ltd. | Postive photoresist composition |
US5576143A (en) | 1991-12-03 | 1996-11-19 | Fuji Photo Film Co., Ltd. | Light-sensitive composition |
JPH095988A (ja) | 1995-06-21 | 1997-01-10 | Mitsubishi Chem Corp | 感放射線性塗布組成物 |
JPH0954432A (ja) | 1995-08-18 | 1997-02-25 | Dainippon Ink & Chem Inc | フォトレジスト組成物 |
US5824451A (en) | 1994-07-04 | 1998-10-20 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
JP2000089477A (ja) * | 1998-09-11 | 2000-03-31 | Nec Corp | レジストパターンの形成方法 |
JP2002090991A (ja) | 2000-09-13 | 2002-03-27 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
JP2002277862A (ja) | 2001-03-21 | 2002-09-25 | Nippon Hoso Kyokai <Nhk> | 液晶光変調器及びそれを用いた表示装置 |
JP2005181379A (ja) * | 2003-12-16 | 2005-07-07 | Matsushita Electric Ind Co Ltd | パターン形成方法 |
JP2005197349A (ja) | 2004-01-05 | 2005-07-21 | Semiconductor Leading Edge Technologies Inc | 微細パターン形成方法及び半導体装置の製造方法 |
WO2005116776A1 (ja) * | 2004-05-26 | 2005-12-08 | Jsr Corporation | 微細パターン形成用樹脂組成物および微細パターン形成方法 |
WO2006022246A1 (ja) * | 2004-08-25 | 2006-03-02 | Renesas Technology Corp. | 微細パターン形成材料、微細レジストパターン形成方法及び電子デバイス装置 |
JP2006208721A (ja) * | 2005-01-27 | 2006-08-10 | Nippon Telegr & Teleph Corp <Ntt> | レジストパターン形成方法 |
JP2006307179A (ja) * | 2005-03-29 | 2006-11-09 | Jsr Corp | 重合体 |
WO2008038526A1 (fr) * | 2006-09-28 | 2008-04-03 | Tokyo Ohka Kogyo Co., Ltd. | Procédé de formation d'un motif, et matériau pour formation de film d'enrobage |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090253080A1 (en) * | 2008-04-02 | 2009-10-08 | Dammel Ralph R | Photoresist Image-Forming Process Using Double Patterning |
US20090253081A1 (en) * | 2008-04-02 | 2009-10-08 | David Abdallah | Process for Shrinking Dimensions Between Photoresist Pattern Comprising a Pattern Hardening Step |
US20090253078A1 (en) * | 2008-04-07 | 2009-10-08 | Sokudo Co., Ltd. | Double exposure lithography using low temperature oxide and uv cure process |
US7981592B2 (en) * | 2008-04-11 | 2011-07-19 | Sandisk 3D Llc | Double patterning method |
US20100040838A1 (en) * | 2008-08-15 | 2010-02-18 | Abdallah David J | Hardmask Process for Forming a Reverse Tone Image |
US20100183851A1 (en) * | 2009-01-21 | 2010-07-22 | Yi Cao | Photoresist Image-forming Process Using Double Patterning |
-
2008
- 2008-06-13 EP EP08777219A patent/EP2159641A1/en not_active Withdrawn
- 2008-06-13 WO PCT/JP2008/060908 patent/WO2008153155A1/ja active Application Filing
- 2008-06-13 JP JP2008155950A patent/JP2009020510A/ja active Pending
- 2008-06-13 KR KR1020097026096A patent/KR20100030616A/ko not_active Application Discontinuation
- 2008-06-13 US US12/664,570 patent/US20100183978A1/en not_active Abandoned
Patent Citations (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3849137A (en) | 1971-10-12 | 1974-11-19 | Basf Ag | Lithographic printing plates and photoresists comprising a photosensitive polymer |
US3779778A (en) | 1972-02-09 | 1973-12-18 | Minnesota Mining & Mfg | Photosolubilizable compositions and elements |
JPS55164824A (en) | 1979-06-05 | 1980-12-22 | Basf Ag | Positiveeprocessing layerrtype transfer print material |
EP0126712A1 (de) | 1983-05-18 | 1984-11-28 | Ciba-Geigy Ag | Härtbare Zusammensetzung und deren Verwendung |
JPS61226746A (ja) | 1985-03-30 | 1986-10-08 | Japan Synthetic Rubber Co Ltd | 半導体集積回路製造用のスピンコート用レジスト組成物 |
JPS61226745A (ja) | 1985-03-30 | 1986-10-08 | Japan Synthetic Rubber Co Ltd | 半導体集積回路製造用のスピンコート用レジスト組成物 |
US5405720A (en) | 1985-08-07 | 1995-04-11 | Japan Synthetic Rubber Co., Ltd. | Radiation-sensitive composition containing 1,2 quinonediazide compound, alkali-soluble resin and monooxymonocarboxylic acid ester solvent |
JPS6236663A (ja) | 1985-08-12 | 1987-02-17 | Mitsubishi Chem Ind Ltd | ナフトキノンジアジド系化合物及び該化合物を含有するポジ型フオトレジスト組成物 |
JPS6269263A (ja) | 1985-09-24 | 1987-03-30 | Toshiba Corp | 感光性組成物 |
JPS62153853A (ja) | 1985-12-27 | 1987-07-08 | Toshiba Corp | 感光性組成物 |
JPS62170950A (ja) | 1986-01-23 | 1987-07-28 | Fuji Photo Film Co Ltd | 感光性組成物 |
JPS6326653A (ja) | 1986-07-21 | 1988-02-04 | Tosoh Corp | フオトレジスト材 |
JPS6334540A (ja) | 1986-07-30 | 1988-02-15 | Mitsubishi Chem Ind Ltd | ポジ型フオトレジスト組成物 |
JPS63146029A (ja) | 1986-12-10 | 1988-06-18 | Toshiba Corp | 感光性組成物 |
JPS63146038A (ja) | 1986-12-10 | 1988-06-18 | Toshiba Corp | 感光性組成物 |
JPS63163452A (ja) | 1986-12-17 | 1988-07-06 | チバ−ガイギー アクチェンゲゼルシャフト | 画像形成方法 |
DE3914407A1 (de) | 1989-04-29 | 1990-10-31 | Basf Ag | Strahlungsempfindliche polymere und positiv arbeitendes aufzeichnungsmaterial |
US5294511A (en) | 1990-01-16 | 1994-03-15 | Fuji Photo Film Co., Ltd. | Photosensitive composition |
US5296330A (en) | 1991-08-30 | 1994-03-22 | Ciba-Geigy Corp. | Positive photoresists containing quinone diazide photosensitizer, alkali-soluble resin and tetra(hydroxyphenyl) alkane additive |
US5436098A (en) | 1991-08-30 | 1995-07-25 | Ciba-Geigy Corporation | Positive photoresists with enhanced resolution and reduced crystallization containing novel tetra(hydroxyphenyl)alkanes |
US5576143A (en) | 1991-12-03 | 1996-11-19 | Fuji Photo Film Co., Ltd. | Light-sensitive composition |
US5360692A (en) | 1992-06-04 | 1994-11-01 | Fuji Photo Film Co., Ltd. | Positive type 1,2-naphthoquinonediazide photoresist composition containing benzotriazole light absorbing agent |
JPH07230165A (ja) | 1993-06-30 | 1995-08-29 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト組成物 |
US5529881A (en) | 1994-03-17 | 1996-06-25 | Fuji Photo Film Co., Ltd. | Postive photoresist composition |
US5824451A (en) | 1994-07-04 | 1998-10-20 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
JPH0862834A (ja) | 1994-08-22 | 1996-03-08 | Mitsubishi Chem Corp | フォトレジスト組成物 |
JPH095988A (ja) | 1995-06-21 | 1997-01-10 | Mitsubishi Chem Corp | 感放射線性塗布組成物 |
JPH0954432A (ja) | 1995-08-18 | 1997-02-25 | Dainippon Ink & Chem Inc | フォトレジスト組成物 |
JP2000089477A (ja) * | 1998-09-11 | 2000-03-31 | Nec Corp | レジストパターンの形成方法 |
JP2002090991A (ja) | 2000-09-13 | 2002-03-27 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
JP2002277862A (ja) | 2001-03-21 | 2002-09-25 | Nippon Hoso Kyokai <Nhk> | 液晶光変調器及びそれを用いた表示装置 |
JP2005181379A (ja) * | 2003-12-16 | 2005-07-07 | Matsushita Electric Ind Co Ltd | パターン形成方法 |
JP2005197349A (ja) | 2004-01-05 | 2005-07-21 | Semiconductor Leading Edge Technologies Inc | 微細パターン形成方法及び半導体装置の製造方法 |
WO2005116776A1 (ja) * | 2004-05-26 | 2005-12-08 | Jsr Corporation | 微細パターン形成用樹脂組成物および微細パターン形成方法 |
WO2006022246A1 (ja) * | 2004-08-25 | 2006-03-02 | Renesas Technology Corp. | 微細パターン形成材料、微細レジストパターン形成方法及び電子デバイス装置 |
JP2006208721A (ja) * | 2005-01-27 | 2006-08-10 | Nippon Telegr & Teleph Corp <Ntt> | レジストパターン形成方法 |
JP2006307179A (ja) * | 2005-03-29 | 2006-11-09 | Jsr Corp | 重合体 |
WO2008038526A1 (fr) * | 2006-09-28 | 2008-04-03 | Tokyo Ohka Kogyo Co., Ltd. | Procédé de formation d'un motif, et matériau pour formation de film d'enrobage |
Non-Patent Citations (10)
Title |
---|
BULL. CL. SCI. ACAD. R. BELG., 1902, pages 721 |
CHEM. ABSTR., 1948, pages 6335 |
CHEM. BER., vol. 112, 1979, pages 3950 - 3954 |
J. AM. CHEM. SOC., vol. 69, 1947, pages 599,600 |
J. HETEROCYCL. CHEM., vol. 8, 1971, pages 327 - 328 |
J. MED. CHEM., EN, vol. 36, no. 26, 1933, pages 4195 - 4200 |
J. MED. CHEM., EN, vol. 6, no. 26, 1933, pages 4195 - 4200 |
J. VAC. SCI. TECHNOL., vol. B 4, 1986, pages 426 |
JUSTUS LIEBIGS ANN. CHEM., vol. 361, 1908, pages 149 |
MONATSH. CHEM., vol. 57, 1955, pages 66 |
Also Published As
Publication number | Publication date |
---|---|
EP2159641A1 (en) | 2010-03-03 |
JP2009020510A (ja) | 2009-01-29 |
US20100183978A1 (en) | 2010-07-22 |
KR20100030616A (ko) | 2010-03-18 |
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