WO2008152454A1 - Dispositif optique et procédé de traitement in situ d'un composant optique pour uv extrême afin d'améliorer une réflectivité réduite - Google Patents

Dispositif optique et procédé de traitement in situ d'un composant optique pour uv extrême afin d'améliorer une réflectivité réduite Download PDF

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Publication number
WO2008152454A1
WO2008152454A1 PCT/IB2007/052224 IB2007052224W WO2008152454A1 WO 2008152454 A1 WO2008152454 A1 WO 2008152454A1 IB 2007052224 W IB2007052224 W IB 2007052224W WO 2008152454 A1 WO2008152454 A1 WO 2008152454A1
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WO
WIPO (PCT)
Prior art keywords
optical device
several
optical
source
surface materials
Prior art date
Application number
PCT/IB2007/052224
Other languages
English (en)
Inventor
Peter Zink
Christof Metzmacher
Rolf Theo Anton Apetz
Original Assignee
Philips Intellectual Property & Standards Gmbh
Koninklijke Philips Electronics N.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Intellectual Property & Standards Gmbh, Koninklijke Philips Electronics N.V. filed Critical Philips Intellectual Property & Standards Gmbh
Priority to KR1020107000713A priority Critical patent/KR101333032B1/ko
Priority to EP07766730A priority patent/EP2158519B1/fr
Priority to US12/602,798 priority patent/US9110390B2/en
Priority to JP2010511735A priority patent/JP5341071B2/ja
Priority to CN2007800533358A priority patent/CN101681114B/zh
Priority to PCT/IB2007/052224 priority patent/WO2008152454A1/fr
Publication of WO2008152454A1 publication Critical patent/WO2008152454A1/fr
Priority to US14/816,106 priority patent/US9897724B2/en

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering

Definitions

  • the present invention relates to an optical device for EUV and/or soft X- ray radiation comprising at least one optical component in a vacuum chamber, which optical component has one or several reflecting surfaces with a top layer of one or several surface materials.
  • the invention also relates to a method of in situ treating such an optical component reflecting EUV and/or soft X-ray radiation in an optical device in order to enhance a reduced reflectivity of the optical component.
  • the present invention refers to the field of optical devices for the spectral range of extreme ultraviolet (EUV) and/or soft X-ray radiation comprising optical components with reflective surfaces for reflecting the EUV and/or soft X-ray radiation.
  • Such optical devices are required, for example, for EUV lithography, in which grazing incidence mirrors and/or multilayer mirrors are arranged in a vacuum chamber between the radiation source and the wafer substrate to be irradiated.
  • Typical materials used for the reflecting surfaces of the grazing incidence mirrors are for example ruthenium (Ru), palladium (Pd) or molybdenum (Mo).
  • Multilayer mirrors for the above spectral range typically comprise a combination of layers of molybdenum and silicon (Si). Often also a top layer of ruthenium is applied for protecting the underlying layers.
  • a problem mainly arising during operation of optical devices with such reflecting optical components is the decrease of reflectivity over time. This reduction in reflectivity can be caused by contaminations of the reflecting surfaces due to debris from the radiation source or to reactions with gas remaining in the vacuum chamber during operation.
  • Radiation sources for EUV lithography today are gas discharge plasmas or laser plasmas. The substances used for plasma generation, however, can move from the radiation source to the optical components and condense on the optical surfaces, thereby reducing their reflectivity.
  • the material released from the radiation source and moving in the direction of the optical components is called debris.
  • Other contaminations of the optical components can result from the fabrication process, transport or mounting of the optical components.
  • the reflectivity of the reflecting surfaces can be reduced by an increased surface roughness, a reduced density or a reduced thickness of the reflecting layer or layers, due to the operation of the radiation source.
  • WO 2004/092693 A2 discloses a method and apparatus for debris removal from a reflecting surface of an EUV collector in an EUV lamp.
  • a controlled sputtering ion source is created which comprises a gas with the atoms of the sputtering ion material and a stimulating mechanism causing the atoms of the sputtering ion material to exit in an ionized state.
  • this sputtering ion source the debris material deposited on the reflecting surfaces of the EUV collector is removed by sputtering.
  • the ionized state of the sputtering ion material is selected to have a distribution around a selected energy peak that has a high probability of sputtering the debris material and a very low probability of sputtering the material of the top layer of the reflecting surface.
  • An object of the present invention is to provide a method of in situ treating an optical component reflecting EUV and/or soft X-ray radiation in an optical device as well as a corresponding optical device, which allow an enhancement of a reduced reflectivity of the optical component and at the same time enhance the lifetime of the optical component.
  • the one or several materials of the top layer of the one or several reflecting surfaces are deposited on these surfaces in situ, i.e. without disassembling the optical device. Due to this deposition of the surface materials, contaminations on the reflecting surface are covered by the surface materials, resulting in an improved reflectivity of this surface. Furthermore, since surface material of reflecting surfaces in EUV lamps may be ablated during operation, this ablated material is also compensated by the material deposited with the proposed method. This means that the reflecting layers of the optical devices will not lose their reflectivity due to erosion of these layers and therefore the lifetime of these optical components will be higher than the lifetime of optical components which are not treated with the proposed method.
  • the deposition of the material(s) can be achieved by various known methods, for example by evaporating the material from the material source or by (e.g. metal-organic) chemical vapor deposition of the material (CVD / MOCVD) or by a sputtering technique, in which a sputter target including the surface material is provided in the vacuum chamber.
  • a sputtering technique it is also possible to generate ions of the surface material(s) with a high kinetic energy, so that some of these ions then replace the atoms or molecules of the contaminant material on the reflecting surface.
  • the present method can be applied continuously during operation of the optical device, after mounting and before the first use of the optical components of this optical device, repeatedly during operation or in operation pauses of the device as well as dependent on the reduction of reflectivity during operation.
  • the reflectivity of at least one of said one or several reflecting surfaces preferably is measured continuously or repeatedly.
  • the surface material then is only deposited when said reflectivity has decreased below a threshold value, which can be set by the operator.
  • Such measurements can include the measurement of the gas composition in the optical device, for example the proportion of mirror material in the gas, the use of a crystal balance, the use of a diffractometer, the use of energy dispersive X-ray analysis or the use of spectroscopic ellipsometry.
  • the source of one or several surface materials is provided as a sputter target in the vacuum chamber of the optical device.
  • the deposition of said surface materials is then performed by sputter deposition using an appropriate sputtering gas, in particular an inert gas like argon (Ar), which normally is used as a buffer gas during operation of the optical device.
  • This gas can be ionized by known means, for example by light (e.g., UV, VUV or EUV), by the generation of microwaves around the optical components, by applying an RF field between the target and the optical components or between the optical components and a further electrode arranged in the vacuum chamber.
  • an ion gun can be used to provide the necessary sputtering ions.
  • the sputtering can be performed continuously or pulsed, with or without a magnetron unit or an additional reactive gas. Moreover, the application of an rf substrate bias to control ion bombardment and substrate cooling or heating to affect surface mobility and diffusion are feasible.
  • the sputter target can be provided as a separate component arranged in the optical device. In this case, the separate component preferably is movable between a position close to the reflecting surface for sputter deposition and away from this surface for normal operation of the optical device.
  • at least one of several sputter targets is provided as a layer of the substrate material on surfaces of optical components of the optical device, which surfaces are not used for reflecting the EUV and/or soft X-ray radiation.
  • the proposed optical device has at least one optical component in a vacuum chamber, which optical component has one or several reflecting surfaces with a top layer of surface materials, e.g. Ru or Mo/Si multilayers.
  • the optical device which is preferably an EUV lamp, for example for EUV lithography, comprises at least one source of said one or several surface materials, said source being usable or operable to deposit surface material on said one or several reflecting surfaces during operation and/or during operation pauses of said optical device in order to cover or substitute deposited contaminant material and/or to compensate for ablated surface material.
  • the optical device preferably also comprises the means for depositing surface material from said source on the one or several reflecting surfaces.
  • These means preferably are electrical means for evaporating said material(s) from said source or for ionizing a sputtering gas and sputtering said surface material(s) from a sputter target.
  • the optical component or part of this optical component is connected to the electrical means in order to apply an RF voltage between the reflective surface and the sputter target.
  • a DC voltage can be applied to generate a DC bias at the reflecting surface.
  • said source of surface materials is arranged to be movable between at least two positions inside said vacuum chamber of said optical device.
  • One position is a position close to the reflecting surface in order to achieve an optimized material deposition on this surface.
  • the other position is a position away from this surface in order to achieve an operation of the optical device without disturbance by the source.
  • the optical device can include a control unit controlling the deposition of said surface material(s) on the reflecting surfaces.
  • a control unit controlling the deposition of said surface material(s) on the reflecting surfaces.
  • means for measuring the reflectivity of at least one of the reflecting surfaces are provided in said optical device, wherein said control unit controls the means for depositing surface material in such a manner that said means deposit said surface material(s) only when said reflectivity has decreased below a preset threshold value.
  • the control unit can also control the movement of the source of material(s) between the two positions.
  • said optical device contains an EUV collector having several shells for collecting EUV and/or soft X-ray radiation from a corresponding radiation source.
  • the front sides of the collector shells represent the reflecting surfaces, while the back sides of these shells do not contribute to the reflection.
  • the back sides are covered with a thick layer of the surface material and serve as a sputter target for the sputter deposition.
  • An additional dummy shell is placed close to the reflecting surface of the inner layer of the collector and is also covered with the surface material on its back side. The one or several surface materials from the back sides are then sputtered according to the proposed method and deposit on the front sides, i.e. on the reflecting surfaces, of the corresponding opposing collector shells.
  • Fig. 1 a schematic view of the principle of the present method
  • Fig. 2 a schematic view of the principle of sputter deposition as an example of the present method
  • Fig. 3 an example of the proposed optical device in a partial view
  • Fig. 4 a schematical configuration of an EUV irradiation unit.
  • the present method and the corresponding device are explained hereinbelow by means of an example of an EUV lamp which is used for EUV lithography.
  • hot plasma is generated to emit the desired EUV radiation, which is focused by a collector and may be deflected by one or more further optical components.
  • the collector in this example comprises several shells of grazing incidence mirrors having reflecting surfaces made of a metallic ruthenium layer.
  • the further optical components have a multilayer reflecting surface which is covered by a protecting top layer of ruthenium.
  • a ruthenium source 1 is arranged in the optical device away from the optical path of the EUV lamp. Ruthenium source 1 is then moved close to the reflecting surface 3 of the optical component 2 to be treated, as schematically indicated in Figure 1.
  • Ruthenium source 1 can be, for example, a sputter target or an evaporator.
  • the ruthenium is then sputtered or evaporated from the source 1 and deposits on the reflecting surface 3. Contaminant material on this surface, for example tin, is covered with the deposited ruthenium. In the same way, also ablation of ruthenium material from the reflecting surface by erosion during operation of the EUV lamp is compensated for by depositing the additional ruthenium on this reflecting surface.
  • Figure 2 shows an example in which the ruthenium source is a sputter target formed of a carrier substrate 4 covered by a thick target layer 5 of ruthenium.
  • the carrier substrate 4 and the optical component 2 are connected to a power supply for generating DC and AC (RF) voltages.
  • Carrier substrate 4 serves as the cathode and optical component 2 as the anode, as is generally known from the field of physical vapor deposition.
  • a working gas for example argon
  • the argon atoms are ionized by the applied RF voltage and the argon ions are accelerated, for example at ⁇ 300 eV, towards the target layer 5 to discharge free ruthenium atoms at a few eV.
  • optical component 2 is shown with a plane reflecting surface 3.
  • the sputter target can have the same design and can be moved in front of and oriented parallel to the reflecting surface 3 to be treated, as shown in Figure 2.
  • the applied RF and/or DC voltage is selected such that ruthenium ions are generated, sputtering of the reflecting surface can be achieved, as a result of which the contaminant materials are removed from this surface and substituted by the ruthenium ions.
  • the sputter efficiency of ruthenium is approximately 1 at ion energies of about 1 keV. This means that for each ruthenium ion one atom of the contaminant material or one ruthenium atom of the top layer of the reflecting surface is removed. Consequently, after an appropriate treating time, a relatively pure ruthenium layer is achieved.
  • At least one of several target layers of the ruthenium source can also be provided on non-reflecting surfaces of the optical components, i.e. surfaces which are not used during operation of the EUV lamp.
  • Figure 3 shows such an example of an optical device, in which back sides of a collector 6 are used as the sputter target. EUV radiation emitted from radiation source 11, a plasma source, is focused by the collector 6.
  • Collector 6 comprises four collector shells 7. The front side 8 of each shell 7 has a reflecting surface; the back side 9 is not used for reflecting radiation.
  • the back sides 9 of the shells 7 of the collector 6 are covered with a thick target layer of ruthenium, and the reflecting surfaces of the front sides are also made of a ruthenium layer.
  • the target layers can be applied galvanically.
  • a dummy shell 10 is provided in front of the inner shell.
  • the dummy shell 10 has the same target layer on the back side as the other shells; the front side of this dummy layer, however, does not have any function.
  • Shells 7 of collector 6 are electrically isolated and connected to a power supply 12.
  • This power supply 12 generates a direct current (bias) as well as an RF alternating current for generating plasma between the shells.
  • a working gas for example argon, is present between the shells. This working gas is used as a buffer gas during operation of the EUV lamp.
  • the DC potentials Ul, U2, U3 and U4 of the different shells are selected such that the front side 8 of each shell 7 is charged positively against the back side of the opposing shell. This means that UO >U1 > U2 > U3 > U4.
  • the argon gas is ionized between the shells, thereby sputtering the ruthenium atoms from the back sides, which ruthenium atoms then deposit on the front sides of the shells, i.e. on the reflecting surfaces.
  • FIG. 4 schematically shows a typical layout of an EUV lithography system with a corresponding EUV lamp.
  • the EUV lamp basically consists of the radiation source 11, the collector 6 and multilayer mirrors 13 in a vacuum vessel 14.
  • the radiation emitted from the radiation source 11 is collected by the reflective collector 6 and focused on an intermediate focus 15.
  • an aperture connects the first volume 16 with a second volume 17 of the EUV lamp.
  • the multilayer mirrors 13 are arranged to guide the radiation from the intermediate focus 15 to the lithography mask (not shown) and the wafer substrate 18.
  • means 19 for debris mitigation are arranged between the radiation source 11 and the collector 6.
  • the collector 6 can be designed as described in connection with Figure 3 in order to continuously or repeatedly enhance the reduced reflectivity of the reflective surfaces.

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  • Physical Vapour Deposition (AREA)

Abstract

La présente invention concerne un dispositif optique et un procédé de traitement in situ d'un composant optique (2, 6, 13) réfléchissant le rayonnement UV extrême et/ou de rayons X mous dans ledit dispositif optique, ledit composant optique (2, 6, 13) étant disposé dans une chambre à vide (14) dudit dispositif optique et comprenant une ou plusieurs surfaces réfléchissantes (3) comportant une couche supérieure de un ou plusieurs matériaux de surface. Dans le procédé, une source (1, 5) dudit un ou plusieurs matériaux de surface est fournie dans ladite chambre (14) dudit dispositif optique et le matériau de surface provenant de ladite source (1, 5) est déposé sur une ou plusieurs surfaces réfléchissantes (3) pendant le fonctionnement et/ou pendant les interruptions momentanées de fonctionnement dudit dispositif optique afin de recouvrir ou de substituer le matériau contaminant déposé et/ou pour compenser le matériau de surface enlevé.
PCT/IB2007/052224 2007-06-12 2007-06-12 Dispositif optique et procédé de traitement in situ d'un composant optique pour uv extrême afin d'améliorer une réflectivité réduite WO2008152454A1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1020107000713A KR101333032B1 (ko) 2007-06-12 2007-06-12 감소된 반사율을 향상시키기 위하여 ｅｕｖ 광 컴포넌트를 인시추 처리하는 광학 장치 및 방법
EP07766730A EP2158519B1 (fr) 2007-06-12 2007-06-12 Dispositif optique et procédé de traitement in situ d'un composant optique pour uv extrême afin d'améliorer une réflectivité réduite
US12/602,798 US9110390B2 (en) 2007-06-12 2007-06-12 Optical device and method of in situ treating an EUV optical component to enhance a reduced reflectivity
JP2010511735A JP5341071B2 (ja) 2007-06-12 2007-06-12 Ｅｕｖ光学部品に低下した反射率を高めるための処理をその場で施す光学装置及び方法
CN2007800533358A CN101681114B (zh) 2007-06-12 2007-06-12 光学设备和原位处理euv光学部件以增强降低的反射率的方法
PCT/IB2007/052224 WO2008152454A1 (fr) 2007-06-12 2007-06-12 Dispositif optique et procédé de traitement in situ d'un composant optique pour uv extrême afin d'améliorer une réflectivité réduite
US14/816,106 US9897724B2 (en) 2007-06-12 2015-08-03 Optical device and method of in situ treating an EUV optical component to enhance a reduced reflectivity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IB2007/052224 WO2008152454A1 (fr) 2007-06-12 2007-06-12 Dispositif optique et procédé de traitement in situ d'un composant optique pour uv extrême afin d'améliorer une réflectivité réduite

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/602,798 A-371-Of-International US9110390B2 (en) 2007-06-12 2007-06-12 Optical device and method of in situ treating an EUV optical component to enhance a reduced reflectivity
US14/816,106 Division US9897724B2 (en) 2007-06-12 2015-08-03 Optical device and method of in situ treating an EUV optical component to enhance a reduced reflectivity

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WO2008152454A1 true WO2008152454A1 (fr) 2008-12-18

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PCT/IB2007/052224 WO2008152454A1 (fr) 2007-06-12 2007-06-12 Dispositif optique et procédé de traitement in situ d'un composant optique pour uv extrême afin d'améliorer une réflectivité réduite

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US (2) US9110390B2 (fr)
EP (1) EP2158519B1 (fr)
JP (1) JP5341071B2 (fr)
KR (1) KR101333032B1 (fr)
CN (1) CN101681114B (fr)
WO (1) WO2008152454A1 (fr)

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CN101681114B (zh) 2013-05-08
KR101333032B1 (ko) 2013-11-26
EP2158519A1 (fr) 2010-03-03
US9897724B2 (en) 2018-02-20
US9110390B2 (en) 2015-08-18
KR20100021649A (ko) 2010-02-25
CN101681114A (zh) 2010-03-24
US20150338560A1 (en) 2015-11-26
US20100238422A1 (en) 2010-09-23
EP2158519B1 (fr) 2012-08-15
JP5341071B2 (ja) 2013-11-13
JP2010532554A (ja) 2010-10-07

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