WO2008149922A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2008149922A1
WO2008149922A1 PCT/JP2008/060348 JP2008060348W WO2008149922A1 WO 2008149922 A1 WO2008149922 A1 WO 2008149922A1 JP 2008060348 W JP2008060348 W JP 2008060348W WO 2008149922 A1 WO2008149922 A1 WO 2008149922A1
Authority
WO
WIPO (PCT)
Prior art keywords
trench
channel
region
semiconductor device
peripheral portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/060348
Other languages
English (en)
French (fr)
Inventor
Masaru Takaishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007150437A external-priority patent/JP5389339B2/ja
Priority claimed from JP2007153761A external-priority patent/JP5207666B2/ja
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of WO2008149922A1 publication Critical patent/WO2008149922A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

　オン抵抗を大幅に低減することが可能な新しい動作原理に基づく半導体装置を提供する。この半導体装置（５０）は、ｎ型エピタキシャル層（２）と、このｎ型エピタキシャル層（２）に形成され、内部に埋め込み電極５が設けられたトレンチ（３）と、ｎ型エピタキシャル層（２）の上面側の所定領域に、平面的に見て、トレンチ（３）と所定の間隔を隔てて形成されたｐ＋型不純物領域（２ａ）とを備えている。そして、トレンチ（３）とｐ＋型不純物領域（２ａ）との間の領域がチャネル（９）となり、トレンチ（３）の周辺に形成される空乏層（１０ｂ）とｐ＋型不純物領域（２ａ）の周辺に形成される空乏層（１０ａ）とで、チャネル（９）を塞ぐことにより、チャネル（９）を流れる電流が遮断される一方、トレンチ（３）の周辺の空乏層（１０ｂ）を消滅させることにより、チャネル（９）を介して電流が流れるように構成されている。
PCT/JP2008/060348 2007-06-06 2008-06-05 半導体装置 Ceased WO2008149922A1 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-150437 2007-06-06
JP2007150437A JP5389339B2 (ja) 2007-06-06 2007-06-06 半導体装置
JP2007-153761 2007-06-11
JP2007153761A JP5207666B2 (ja) 2007-06-11 2007-06-11 半導体装置

Publications (1)

Publication Number Publication Date
WO2008149922A1 true WO2008149922A1 (ja) 2008-12-11

Family

ID=40093733

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060348 Ceased WO2008149922A1 (ja) 2007-06-06 2008-06-05 半導体装置

Country Status (1)

Country Link
WO (1) WO2008149922A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2975531A1 (fr) * 2011-05-16 2012-11-23 St Microelectronics Tours Sas Diode schottky verticale controlee
EP2482315A4 (en) * 2010-10-29 2013-08-28 Panasonic Corp SEMICONDUCTOR COMPONENT
JP2015225976A (ja) * 2014-05-28 2015-12-14 株式会社東芝 半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04261065A (ja) * 1991-01-29 1992-09-17 Mitsubishi Electric Corp 半導体装置
JP2000332239A (ja) * 1999-05-17 2000-11-30 Nissan Motor Co Ltd 電界効果トランジスタ
JP2006190807A (ja) * 2005-01-06 2006-07-20 Hitachi Ltd シリコンカーバイド静電誘導トランジスタ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04261065A (ja) * 1991-01-29 1992-09-17 Mitsubishi Electric Corp 半導体装置
JP2000332239A (ja) * 1999-05-17 2000-11-30 Nissan Motor Co Ltd 電界効果トランジスタ
JP2006190807A (ja) * 2005-01-06 2006-07-20 Hitachi Ltd シリコンカーバイド静電誘導トランジスタ

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2482315A4 (en) * 2010-10-29 2013-08-28 Panasonic Corp SEMICONDUCTOR COMPONENT
US8742427B2 (en) 2010-10-29 2014-06-03 Panasonic Corporation Semiconductor element
FR2975531A1 (fr) * 2011-05-16 2012-11-23 St Microelectronics Tours Sas Diode schottky verticale controlee
JP2015225976A (ja) * 2014-05-28 2015-12-14 株式会社東芝 半導体装置

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