WO2008149835A1 - 集積型薄膜太陽電池とその製造方法 - Google Patents

集積型薄膜太陽電池とその製造方法 Download PDF

Info

Publication number
WO2008149835A1
WO2008149835A1 PCT/JP2008/060132 JP2008060132W WO2008149835A1 WO 2008149835 A1 WO2008149835 A1 WO 2008149835A1 JP 2008060132 W JP2008060132 W JP 2008060132W WO 2008149835 A1 WO2008149835 A1 WO 2008149835A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode layer
isolation trench
trench
layer isolation
semiconductor layer
Prior art date
Application number
PCT/JP2008/060132
Other languages
English (en)
French (fr)
Inventor
Toshiaki Sasaki
Original Assignee
Kaneka Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kaneka Corporation filed Critical Kaneka Corporation
Priority to JP2009517857A priority Critical patent/JP5171818B2/ja
Priority to EP08777083.0A priority patent/EP2169724B1/en
Publication of WO2008149835A1 publication Critical patent/WO2008149835A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

　集積型薄膜太陽電池において、透明絶縁基板（１１）上に順次積層された透明電極層（１２）、１以上の光電変換ユニットを含む半導体層（２０）、および裏面電極層（４）が、複数の光電変換セルを形成するように直線状で互いに平行な複数の透明電極層分離溝（９０３）、半導体層分離溝（９０５）、および裏面電極層分離溝（９０４０）によってそれぞれ分割され、かつそれらの複数の光電変換セルが半導体層分離溝を介して互いに電気的に直列接続されており、透明電極層が低温で層形成可能な透明導電材料からなり、透明電極層分離溝、半導体層分離溝、および裏面電極層分離溝の少なくとも一部は所定ピッチで形成された実質的に同形状のピットのつながりによって構成されており、各ピットにおいて溝の幅方向の最大長Ｗが溝の長手方向の最大長Ｌより大きい。
PCT/JP2008/060132 2007-06-04 2008-06-02 集積型薄膜太陽電池とその製造方法 WO2008149835A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009517857A JP5171818B2 (ja) 2007-06-04 2008-06-02 集積型薄膜太陽電池の製造方法
EP08777083.0A EP2169724B1 (en) 2007-06-04 2008-06-02 Integrated thin film solar cell and method for fabricating the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-148366 2007-06-04
JP2007148366 2007-06-04
JP2007166664 2007-06-25
JP2007-166664 2007-06-25

Publications (1)

Publication Number Publication Date
WO2008149835A1 true WO2008149835A1 (ja) 2008-12-11

Family

ID=40093651

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060132 WO2008149835A1 (ja) 2007-06-04 2008-06-02 集積型薄膜太陽電池とその製造方法

Country Status (3)

Country Link
EP (1) EP2169724B1 (ja)
JP (1) JP5171818B2 (ja)
WO (1) WO2008149835A1 (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011027533A1 (ja) * 2009-09-04 2011-03-10 株式会社アルバック 薄膜太陽電池の製造方法及びその製造装置
WO2011062130A1 (ja) * 2009-11-20 2011-05-26 株式会社カネカ 薄膜光電変換装置および薄膜光電変換装置の製造方法
WO2011158645A1 (ja) * 2010-06-17 2011-12-22 株式会社カネカ 薄膜太陽電池
JP2012038956A (ja) * 2010-08-09 2012-02-23 Kaneka Corp 薄膜太陽電池モジュール
US9091133B2 (en) 2009-02-20 2015-07-28 Halliburton Energy Services, Inc. Swellable material activation and monitoring in a subterranean well
US9963598B2 (en) 2011-02-23 2018-05-08 Dexerials Corporation Transparent conductive film, information input device, and electronic device
KR20200119323A (ko) * 2018-02-15 2020-10-19 (씨엔비엠) 벵부 디자인 앤드 리서치 인스티튜트 포 글래스 인더스트리 컴퍼니 리미티드 박막 태양광 모듈을 제조하는 방법
WO2021200286A1 (ja) * 2020-03-31 2021-10-07 積水化学工業株式会社 太陽電池及び太陽電池製造方法
CN114365585A (zh) * 2019-09-13 2022-04-15 株式会社Zefa 电路成型部件以及电子设备

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8288646B2 (en) 2009-05-06 2012-10-16 UltraSolar Technology, Inc. Pyroelectric solar technology apparatus and method
US20110290316A1 (en) * 2010-05-28 2011-12-01 Daniel Warren Hawtof Light scattering inorganic substrates by soot deposition
US20110290314A1 (en) * 2010-05-28 2011-12-01 Andrey Kobyakov Light scattering articles using hemispherical particles
US20120000529A1 (en) * 2010-07-01 2012-01-05 Primestar Solar Method and system for forming a photovoltaic cell and a photovoltaic cell
KR101172195B1 (ko) * 2010-09-16 2012-08-07 엘지이노텍 주식회사 태양광 발전장치 및 이의 제조방법
KR101189432B1 (ko) * 2011-01-25 2012-10-10 엘지이노텍 주식회사 태양전지 및 이의 제조방법
WO2013164700A2 (en) * 2012-05-03 2013-11-07 Tel Solar Ag Tco layer with improved long-term stability and method for manufacturing thereof
JP2015034279A (ja) * 2013-04-10 2015-02-19 デクセリアルズ株式会社 透明導電膜形成用インク組成物、透明導電膜、透明電極の製造方法、及び画像表示装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211928A (ja) * 1994-01-24 1995-08-11 Sanyo Electric Co Ltd 集積型光電変換素子の製造方法
JP2001267613A (ja) * 2000-03-17 2001-09-28 Kanegafuchi Chem Ind Co Ltd 集積型薄膜太陽電池とその製造方法
JP2001274446A (ja) * 2000-03-23 2001-10-05 Kanegafuchi Chem Ind Co Ltd 集積型ハイブリッド薄膜太陽電池の製造方法
JP2002016269A (ja) * 2000-06-28 2002-01-18 Mitsubishi Heavy Ind Ltd 薄膜太陽電池パネルの製造方法及び製造装置
JP2002141526A (ja) * 2000-11-06 2002-05-17 Mitsubishi Heavy Ind Ltd 薄膜太陽電池の製造方法
JP2002231979A (ja) * 2001-01-30 2002-08-16 Sanyo Electric Co Ltd 光起電力装置の製造方法及び光起電力装置
JP2006054254A (ja) * 2004-08-10 2006-02-23 Kaneka Corp 光電変換装置の製造方法
JP2007005345A (ja) * 2005-06-21 2007-01-11 Mitsubishi Heavy Ind Ltd 太陽電池モジュール及び太陽電池モジュールの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3436858B2 (ja) * 1997-02-27 2003-08-18 シャープ株式会社 薄膜太陽電池の製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211928A (ja) * 1994-01-24 1995-08-11 Sanyo Electric Co Ltd 集積型光電変換素子の製造方法
JP2001267613A (ja) * 2000-03-17 2001-09-28 Kanegafuchi Chem Ind Co Ltd 集積型薄膜太陽電池とその製造方法
JP2001274446A (ja) * 2000-03-23 2001-10-05 Kanegafuchi Chem Ind Co Ltd 集積型ハイブリッド薄膜太陽電池の製造方法
JP2002016269A (ja) * 2000-06-28 2002-01-18 Mitsubishi Heavy Ind Ltd 薄膜太陽電池パネルの製造方法及び製造装置
JP2002141526A (ja) * 2000-11-06 2002-05-17 Mitsubishi Heavy Ind Ltd 薄膜太陽電池の製造方法
JP2002231979A (ja) * 2001-01-30 2002-08-16 Sanyo Electric Co Ltd 光起電力装置の製造方法及び光起電力装置
JP2006054254A (ja) * 2004-08-10 2006-02-23 Kaneka Corp 光電変換装置の製造方法
JP2007005345A (ja) * 2005-06-21 2007-01-11 Mitsubishi Heavy Ind Ltd 太陽電池モジュール及び太陽電池モジュールの製造方法

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9091133B2 (en) 2009-02-20 2015-07-28 Halliburton Energy Services, Inc. Swellable material activation and monitoring in a subterranean well
WO2011027533A1 (ja) * 2009-09-04 2011-03-10 株式会社アルバック 薄膜太陽電池の製造方法及びその製造装置
JPWO2011027533A1 (ja) * 2009-09-04 2013-01-31 株式会社アルバック 薄膜太陽電池の製造方法及びその製造装置
WO2011062130A1 (ja) * 2009-11-20 2011-05-26 株式会社カネカ 薄膜光電変換装置および薄膜光電変換装置の製造方法
JPWO2011062130A1 (ja) * 2009-11-20 2013-04-04 株式会社カネカ 薄膜光電変換装置および薄膜光電変換装置の製造方法
WO2011158645A1 (ja) * 2010-06-17 2011-12-22 株式会社カネカ 薄膜太陽電池
JP5827224B2 (ja) * 2010-06-17 2015-12-02 株式会社カネカ 薄膜太陽電池およびその製造方法
JP2012038956A (ja) * 2010-08-09 2012-02-23 Kaneka Corp 薄膜太陽電池モジュール
US9963598B2 (en) 2011-02-23 2018-05-08 Dexerials Corporation Transparent conductive film, information input device, and electronic device
US10100208B2 (en) 2011-02-23 2018-10-16 Dexerials Corporation Method of manufacturing a transparent conductive film
US10196526B2 (en) 2011-02-23 2019-02-05 Dexerials Corporation Transparent conductive film, information input device, and electronic device
KR20200119323A (ko) * 2018-02-15 2020-10-19 (씨엔비엠) 벵부 디자인 앤드 리서치 인스티튜트 포 글래스 인더스트리 컴퍼니 리미티드 박막 태양광 모듈을 제조하는 방법
JP2021514115A (ja) * 2018-02-15 2021-06-03 （シーエヌビーエム）ボンブー デザイン アンド リサーチ インスティテュート フォー グラス インダストリー カンパニー，リミティド 薄膜ソーラーモジュールの製造方法
KR102419215B1 (ko) * 2018-02-15 2022-07-11 씨엔비엠 리서치 인스티튜트 포 어드밴스드 글래스 머터리얼즈 그룹 컴퍼니 리미티드 박막 태양광 모듈을 제조하는 방법
JP7119103B2 (ja) 2018-02-15 2022-08-16 中建材硝子新材料研究院集団有限公司 薄膜ソーラーモジュールの製造方法
CN114365585A (zh) * 2019-09-13 2022-04-15 株式会社Zefa 电路成型部件以及电子设备
WO2021200286A1 (ja) * 2020-03-31 2021-10-07 積水化学工業株式会社 太陽電池及び太陽電池製造方法

Also Published As

Publication number Publication date
JP5171818B2 (ja) 2013-03-27
JPWO2008149835A1 (ja) 2010-08-26
EP2169724A4 (en) 2016-04-20
EP2169724A1 (en) 2010-03-31
EP2169724B1 (en) 2018-12-19

Similar Documents

Publication Publication Date Title
WO2008149835A1 (ja) 集積型薄膜太陽電池とその製造方法
WO2009072592A1 (ja) 集積型薄膜光電変換装置とその製造方法
WO2011053006A3 (en) Thin film solar cell module
CN100568537C (zh) 太阳能电池模块
WO2008008477A3 (en) Architectures and criteria for the design of high efficiency organic photovoltaic cells
WO2004112161A3 (de) Tandemsolarzelle mit einer gemeinsamen organischen elektrode
WO2009075267A1 (ja) 色素増感光電変換素子モジュールおよびその製造方法ならびに光電変換素子モジュールおよびその製造方法ならびに電子機器
WO2008149811A1 (ja) 色素増感太陽電池モジュールおよびその製造方法
WO2010021477A3 (ko) 태양전지모듈 및 그 제조방법
WO2008051275A3 (en) Monolithic integration nonplanar solar cells
WO2008157807A3 (en) Array of monolithically integrated thin film photovoltaic cells and associated methods
EP2080231A1 (en) Thin film solar cell and method for manufacturing thin film solar cell
WO2008014248A3 (en) Thin film photovoltaic module wiring for improved efficiency
EP1926111A3 (en) Dye-sensitized solar cell module having vertically stacked cells and method of manufacturing the same
EP1933344A3 (en) Dye sensitized solar cell module and manufacturing method thereof
WO2013152965A3 (de) Photovoltaische dünnschichtsolarmodule sowie verfahren zur herstellung solcher dünnschichtsolarmodule
WO2008114825A1 (ja) 色素増感太陽電池モジュールおよびその製造方法
WO2009150654A3 (en) Solar cell with funnel-like groove structure
WO2008106565A3 (en) Structures for low cost, reliable solar modules
EP2043154A3 (en) Thin-film solar battery module and method of producing the same
WO2008136872A3 (en) Structures for low cost, reliable solar modules
DE602005025386D1 (de) Sierte solarzelle, elektrode für eine farbstoffsensibilisierte solarzelle und herstellungsverfahren dafür
WO2012037191A3 (en) Improved photovoltaic cell assembly and method
WO2010044645A3 (en) Semiconductor light emitting device and method for manufacturing the same
WO2009022414A1 (ja) 光電変換装置およびその製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08777083

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009517857

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2008777083

Country of ref document: EP