WO2008143088A1 - プラズマ処理装置及び防着部材の製造方法 - Google Patents

プラズマ処理装置及び防着部材の製造方法 Download PDF

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Publication number
WO2008143088A1
WO2008143088A1 PCT/JP2008/058850 JP2008058850W WO2008143088A1 WO 2008143088 A1 WO2008143088 A1 WO 2008143088A1 JP 2008058850 W JP2008058850 W JP 2008058850W WO 2008143088 A1 WO2008143088 A1 WO 2008143088A1
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
processing device
preventing member
adhesion
manufacturing
Prior art date
Application number
PCT/JP2008/058850
Other languages
English (en)
French (fr)
Inventor
Yutaka Kokaze
Masahisa Ueda
Mitsuhiro Endou
Koukou Suu
Toshiya Miyazaki
Genji Sakata
Toshiyuki Nakamura
Original Assignee
Ulvac, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac, Inc. filed Critical Ulvac, Inc.
Priority to KR1020097022702A priority Critical patent/KR101204496B1/ko
Priority to CN2008800110803A priority patent/CN101652840B/zh
Priority to EP08752721.4A priority patent/EP2151855B1/en
Priority to US12/600,650 priority patent/US20100151150A1/en
Priority to JP2009515171A priority patent/JP5373602B2/ja
Publication of WO2008143088A1 publication Critical patent/WO2008143088A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Coating By Spraying Or Casting (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

　このプラズマ処理装置は、被処理基板上で貴金属材料および強誘電体材料のプラズマ処理を行い、なおかつ加熱されながらプラズマに曝される構成部材を備えた装置であって、前記構成部材が、アルミニウム純度９９％以上のアルミ合金で形成されている。
PCT/JP2008/058850 2007-05-18 2008-05-14 プラズマ処理装置及び防着部材の製造方法 WO2008143088A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020097022702A KR101204496B1 (ko) 2007-05-18 2008-05-14 플라즈마 처리 장치 및 방착 부재의 제조 방법
CN2008800110803A CN101652840B (zh) 2007-05-18 2008-05-14 等离子体处理装置及防附着部件的制造方法
EP08752721.4A EP2151855B1 (en) 2007-05-18 2008-05-14 Plasma-processing device and method of manufacturing adhesion-preventing member
US12/600,650 US20100151150A1 (en) 2007-05-18 2008-05-14 Plasma processing apparatus and manufacturing method of deposition-inhibitory member
JP2009515171A JP5373602B2 (ja) 2007-05-18 2008-05-14 プラズマ処理装置及び防着部材の製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007132631 2007-05-18
JP2007-132631 2007-05-18
JP2007-146753 2007-06-01
JP2007146753 2007-06-01

Publications (1)

Publication Number Publication Date
WO2008143088A1 true WO2008143088A1 (ja) 2008-11-27

Family

ID=40031797

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058850 WO2008143088A1 (ja) 2007-05-18 2008-05-14 プラズマ処理装置及び防着部材の製造方法

Country Status (7)

Country Link
US (1) US20100151150A1 (ja)
EP (1) EP2151855B1 (ja)
JP (1) JP5373602B2 (ja)
KR (1) KR101204496B1 (ja)
CN (1) CN101652840B (ja)
TW (1) TWI456651B (ja)
WO (1) WO2008143088A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011136512A2 (ko) * 2010-04-27 2011-11-03 (주)타이닉스 고밀도 플라즈마 발생장치
JP2012174889A (ja) * 2011-02-22 2012-09-10 Ulvac Japan Ltd エッチング装置及びエッチング方法
WO2013146137A1 (ja) * 2012-03-28 2013-10-03 富士フイルム株式会社 真空成膜装置用防着板、真空成膜装置、および、真空成膜方法
JP2016136636A (ja) * 2010-05-21 2016-07-28 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマ処理装置のための可動チャンバライナ・プラズマ閉じ込めスクリーン複合体

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5378706B2 (ja) * 2008-05-22 2013-12-25 東京エレクトロン株式会社 プラズマ処理装置及びそれに用いられる処理ガス供給装置
TWI429492B (zh) * 2009-02-17 2014-03-11 Univ Nat Chunghsing Preparation of inorganic nano-particles and application of the preparation of the system
US20140065838A1 (en) * 2012-08-31 2014-03-06 Carolyn R. Ellinger Thin film dielectric layer formation
US8791023B2 (en) * 2012-08-31 2014-07-29 Eastman Kodak Company Patterned thin film dielectric layer formation
US8927434B2 (en) * 2012-08-31 2015-01-06 Eastman Kodak Company Patterned thin film dielectric stack formation
KR101420333B1 (ko) 2012-11-19 2014-07-16 삼성디스플레이 주식회사 기상 증착 장치, 이를 이용한 박막 형성 방법 및 유기 발광 표시 장치 제조 방법
KR20140095825A (ko) * 2013-01-25 2014-08-04 삼성전자주식회사 플라즈마 설비
CN107946164B (zh) * 2017-11-20 2019-09-27 深圳市华星光电技术有限公司 一种防着板及其制备方法和应用
KR102420149B1 (ko) * 2018-06-28 2022-07-12 한국알박(주) 플라즈마 에칭 장치 및 플라즈마 에칭 방법
JP7093850B2 (ja) * 2018-12-03 2022-06-30 株式会社アルバック 成膜装置及び成膜方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07273086A (ja) * 1994-03-30 1995-10-20 Sumitomo Metal Ind Ltd プラズマ処理装置及び該装置を用いたプラズマ処理方法
JPH10130872A (ja) * 1996-10-29 1998-05-19 Sumitomo Metal Ind Ltd プラズマ処理方法
JP2000124137A (ja) * 1998-10-13 2000-04-28 Hitachi Ltd プラズマ処理装置
JP2001068458A (ja) * 1999-08-31 2001-03-16 Sumitomo Metal Ind Ltd プラズマ処理装置及びプラズマ処理方法
JP2004356311A (ja) 2003-05-28 2004-12-16 Sony Corp プラズマ処理装置
JP2006303158A (ja) * 2005-04-20 2006-11-02 Tosoh Corp 真空装置用部品
JP2007132631A (ja) 2005-11-14 2007-05-31 Showa Denko Kk 熱交換器
JP2007146753A (ja) 2005-11-28 2007-06-14 Mitsubishi Agricult Mach Co Ltd 作業車両のラジエータ防塵装置

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JP4399206B2 (ja) * 2003-08-06 2010-01-13 株式会社アルバック 薄膜製造装置
US7754353B2 (en) * 2003-10-31 2010-07-13 Newns Dennis M Method and structure for ultra-high density, high data rate ferroelectric storage disk technology using stabilization by a surface conducting layer
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JPH07273086A (ja) * 1994-03-30 1995-10-20 Sumitomo Metal Ind Ltd プラズマ処理装置及び該装置を用いたプラズマ処理方法
JPH10130872A (ja) * 1996-10-29 1998-05-19 Sumitomo Metal Ind Ltd プラズマ処理方法
JP2000124137A (ja) * 1998-10-13 2000-04-28 Hitachi Ltd プラズマ処理装置
JP2001068458A (ja) * 1999-08-31 2001-03-16 Sumitomo Metal Ind Ltd プラズマ処理装置及びプラズマ処理方法
JP2004356311A (ja) 2003-05-28 2004-12-16 Sony Corp プラズマ処理装置
JP2006303158A (ja) * 2005-04-20 2006-11-02 Tosoh Corp 真空装置用部品
JP2007132631A (ja) 2005-11-14 2007-05-31 Showa Denko Kk 熱交換器
JP2007146753A (ja) 2005-11-28 2007-06-14 Mitsubishi Agricult Mach Co Ltd 作業車両のラジエータ防塵装置

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011136512A2 (ko) * 2010-04-27 2011-11-03 (주)타이닉스 고밀도 플라즈마 발생장치
WO2011136512A3 (ko) * 2010-04-27 2012-03-08 (주)타이닉스 고밀도 플라즈마 발생장치
JP2016136636A (ja) * 2010-05-21 2016-07-28 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマ処理装置のための可動チャンバライナ・プラズマ閉じ込めスクリーン複合体
JP2012174889A (ja) * 2011-02-22 2012-09-10 Ulvac Japan Ltd エッチング装置及びエッチング方法
WO2013146137A1 (ja) * 2012-03-28 2013-10-03 富士フイルム株式会社 真空成膜装置用防着板、真空成膜装置、および、真空成膜方法

Also Published As

Publication number Publication date
EP2151855A1 (en) 2010-02-10
KR20100002267A (ko) 2010-01-06
EP2151855A4 (en) 2011-05-25
TWI456651B (zh) 2014-10-11
JPWO2008143088A1 (ja) 2010-08-05
US20100151150A1 (en) 2010-06-17
CN101652840A (zh) 2010-02-17
JP5373602B2 (ja) 2013-12-18
KR101204496B1 (ko) 2012-11-26
EP2151855B1 (en) 2014-03-12
TW200901314A (en) 2009-01-01
CN101652840B (zh) 2013-07-03

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