WO2008129859A1 - 発光素子及び表示装置 - Google Patents

発光素子及び表示装置 Download PDF

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Publication number
WO2008129859A1
WO2008129859A1 PCT/JP2008/000887 JP2008000887W WO2008129859A1 WO 2008129859 A1 WO2008129859 A1 WO 2008129859A1 JP 2008000887 W JP2008000887 W JP 2008000887W WO 2008129859 A1 WO2008129859 A1 WO 2008129859A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
emitting element
positive hole
emitting layer
display device
Prior art date
Application number
PCT/JP2008/000887
Other languages
English (en)
French (fr)
Inventor
Masayuki Ono
Shogo Nasu
Eiichi Satoh
Reiko Taniguchi
Masaru Odagiri
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Publication of WO2008129859A1 publication Critical patent/WO2008129859A1/ja

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

　本発明に係る発光素子は、少なくとも一方が透明又は半透明である一対の電極と、窒化物半導体からなる各カラムの長手方向が前記一対の電極間に互いに平行に延在する複数のカラムで構成された窒化物半導体カラムを含む発光層と、前記発光層を構成する前記カラムの間隙を埋めるように設けられた第１の正孔輸送層とを備え、前記発光層を構成する前記窒化物半導体カラムは、前記第１の正孔輸送層との界面の一部に正孔輸送性有機材料を担持している。
PCT/JP2008/000887 2007-04-13 2008-04-07 発光素子及び表示装置 WO2008129859A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007105842 2007-04-13
JP2007-105842 2007-04-13

Publications (1)

Publication Number Publication Date
WO2008129859A1 true WO2008129859A1 (ja) 2008-10-30

Family

ID=39875389

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/000887 WO2008129859A1 (ja) 2007-04-13 2008-04-07 発光素子及び表示装置

Country Status (1)

Country Link
WO (1) WO2008129859A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011048318A1 (fr) * 2009-10-23 2011-04-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d'une ecran a tres haute resolution utilisant un film conducteur emissif anisotropique a base de nanofils
JP2012069860A (ja) * 2010-09-27 2012-04-05 Stanley Electric Co Ltd 半導体発光装置およびその製造方法
WO2014056762A3 (de) * 2012-10-09 2014-06-19 Osram Opto Semiconductors Gmbh Verfahren zur herstellung eines optoelektronischen halbleiterbauteils und optoelektronisches halbleiterbauteil
JP6149247B1 (ja) * 2016-11-21 2017-06-21 株式会社奥本研究所 発光デバイスおよびその製造方法
WO2017153600A1 (fr) * 2016-03-11 2017-09-14 Valeo Comfort And Driving Assistance Écran actif et afficheur tête haute comprenant un tel écran
CN114447172A (zh) * 2020-10-30 2022-05-06 精工爱普生株式会社 发光装置及投影仪

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002118124A (ja) * 2000-10-06 2002-04-19 Sony Corp 素子実装方法
JP2006332650A (ja) * 2005-05-24 2006-12-07 Lg Electronics Inc ロッド型発光素子及びその製造方法
JP2007027578A (ja) * 2005-07-20 2007-02-01 Kyoto Univ 有機半導体発光素子およびそれを用いた表示装置、ならびに有機半導体発光素子の製造方法
JP2007027298A (ja) * 2005-07-14 2007-02-01 Matsushita Electric Works Ltd 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法
JP2007080870A (ja) * 2005-09-09 2007-03-29 Matsushita Electric Works Ltd 発光装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002118124A (ja) * 2000-10-06 2002-04-19 Sony Corp 素子実装方法
JP2006332650A (ja) * 2005-05-24 2006-12-07 Lg Electronics Inc ロッド型発光素子及びその製造方法
JP2007027298A (ja) * 2005-07-14 2007-02-01 Matsushita Electric Works Ltd 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法
JP2007027578A (ja) * 2005-07-20 2007-02-01 Kyoto Univ 有機半導体発光素子およびそれを用いた表示装置、ならびに有機半導体発光素子の製造方法
JP2007080870A (ja) * 2005-09-09 2007-03-29 Matsushita Electric Works Ltd 発光装置

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8890111B2 (en) 2009-10-23 2014-11-18 Commissariat à l'énergie atomique et aux énergies alternatives Method for manufacturing a very-high-resolution screen using a nanowire-based emitting anisotropic conductive film
FR2951875A1 (fr) * 2009-10-23 2011-04-29 Commissariat Energie Atomique Procede de fabrication d’un ecran a tres haute resolution utilisant une couche conductrice anisotropique et emissive
WO2011048318A1 (fr) * 2009-10-23 2011-04-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d'une ecran a tres haute resolution utilisant un film conducteur emissif anisotropique a base de nanofils
JP2012069860A (ja) * 2010-09-27 2012-04-05 Stanley Electric Co Ltd 半導体発光装置およびその製造方法
US9691815B2 (en) 2012-10-09 2017-06-27 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor component, and optoelectronic semiconductor component
WO2014056762A3 (de) * 2012-10-09 2014-06-19 Osram Opto Semiconductors Gmbh Verfahren zur herstellung eines optoelektronischen halbleiterbauteils und optoelektronisches halbleiterbauteil
WO2017153600A1 (fr) * 2016-03-11 2017-09-14 Valeo Comfort And Driving Assistance Écran actif et afficheur tête haute comprenant un tel écran
FR3048817A1 (fr) * 2016-03-11 2017-09-15 Valeo Comfort & Driving Assistance Ecran et afficheur tete haute comprenant un tel ecran
CN109791927A (zh) * 2016-03-11 2019-05-21 法雷奥舒适驾驶助手公司 屏和包括这种屏的平视显示器
US11275238B2 (en) 2016-03-11 2022-03-15 Valeo Comfort And Driving Assistance Active screen and head-up display comprising such a screen
CN109791927B (zh) * 2016-03-11 2023-10-20 法雷奥舒适驾驶助手公司 屏和包括这种屏的平视显示器
JP6149247B1 (ja) * 2016-11-21 2017-06-21 株式会社奥本研究所 発光デバイスおよびその製造方法
JP2018085171A (ja) * 2016-11-21 2018-05-31 株式会社奥本研究所 発光デバイスおよびその製造方法
CN114447172A (zh) * 2020-10-30 2022-05-06 精工爱普生株式会社 发光装置及投影仪
CN114447172B (zh) * 2020-10-30 2023-11-24 精工爱普生株式会社 发光装置及投影仪

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