Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
  • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
  • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
  • B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
  • B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
  • B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
  • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
  • B29C33/00—Moulds or cores; Details thereof or accessories therefor
  • B29C33/0038—Moulds or cores; Details thereof or accessories therefor with sealing means or the like
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
  • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
  • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
  • B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
  • B29C43/18—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles incorporating preformed parts or layers, e.g. compression moulding around inserts or for coating articles
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
  • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
  • H01L21/565—Moulds
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  • H01L24/93—Batch processes
  • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
  • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/85—Packages
  • H10H20/852—Encapsulations
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
  • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
  • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
  • B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
  • B29C45/14065—Positioning or centering articles in the mould
  • B29C2045/14098—Positioning or centering articles in the mould fixing or clamping inserts having variable dimensions
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
  • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
  • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
  • B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
  • B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
  • B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
  • B29C2045/14663—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame the mould cavity walls being lined with a film, e.g. release film
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
  • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
  • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
  • B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
  • B29C2045/1486—Details, accessories and auxiliary operations
  • B29C2045/14934—Preventing penetration of injected material between insert and adjacent mould wall
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
  • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
  • B29C33/00—Moulds or cores; Details thereof or accessories therefor
  • B29C33/10—Moulds or cores; Details thereof or accessories therefor with incorporated venting means
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
  • B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
  • B29K2083/00—Use of polymers having silicon, with or without sulfur, nitrogen, oxygen, or carbon only, in the main chain, as moulding material
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/4805—Shape
  • H01L2224/4809—Loop shape
  • H01L2224/48091—Arched
• • H—ELECTRICITY
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  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/481—Disposition
  • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
  • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
  • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
  • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/93—Batch processes
  • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
  • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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  • H01L2924/01—Chemical elements
  • H01L2924/01006—Carbon [C]
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  • H01L2924/01029—Copper [Cu]
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  • H01L2924/01033—Arsenic [As]
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  • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
  • H01L2924/097—Glass-ceramics, e.g. devitrified glass
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  • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
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  • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
  • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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  • H01L2924/181—Encapsulation

Definitions

• the invention relates to a method for producing an optoelectronic component and to an optoelectronic component.
• optical elements such as lenses
• Such an optoelectronic component is described, for example, in the document DE 10 2005 020 908 A1.
• a prefabricated lens is mounted on a radiation-generating semiconductor body which is mounted in a housing.
• the semiconductor body is encapsulated with a cladding, which is intended to protect the semiconductor body.
• the lens is manufactured separately in this optoelectronic component and fastened in an additional assembly process. This results in additional installation effort and additional potential sources of error.
• the object of the invention is to specify an improved production method for an optoelectronic component. It is another object of the invention to provide an optoelectronic device with a simplified manufacturing process.
• a method for producing an optoelectronic component has in particular the following steps:
• a cladding which is permeable to radiation of the optoelectronic semiconductor body, at least over the front side of the semiconductor body, in which the cladding is formed as an optical element using a tool with a closed cavity, which has the contour of the optical element.
• the optical element may, for example, be a lens.
• the cladding may be disposed directly adjacent to or spaced from the front side of the optoelectronic semiconductor body.
• an additional layer can be arranged between the cladding and the front side of the semiconductor body, for example a wavelength-converting layer. This layer will be explained in more detail below.
• the substrate is at least partially enclosed by the sheath.
• the present method offers the advantage of producing a cladding and an optical element for shaping the emission characteristic in one method step, ie, the optical element is integrated into the optoelectronic component and not manufactured separately. In this way, the manufacturing process of the optoelectronic component is simplified and the number of error sources in the production is reduced.
• the envelope is by means of a
• Applied plastic processing process which is particularly preferably mass production suitable.
• a mass production suitable plastic processing process usually allows a cheaper production than, for example, manual or semi-manual casting.
• the plastic processing process can be, for example, compression molding, liquid injection
• LIM injection molding advantageously enables the mass-production-capable injection molding of liquid plastic materials, such as silicone-containing plastic materials, which are particularly well suited for optical elements.
• the device for LIM injection molding usually comprises at least one reservoir for a liquid plastic material and a pump that transports the plastic material from the reservoir to a dosing system.
• a metering system for example, a screw, a piston dispenser, a static mixer or a static dynamic mixer can be used. It can also be an or several further injection molding of the device may be included, for example, to process two- or multi-component plastic materials.
• the closed cavity with the contour of the optical element is usually formed by a tool.
• the tool comprises at least two tool parts, of which at least one part has the cavity with the contour of the optical element.
• the substrate with the optoelectronic semiconductor body is in this case, for example, inserted into the one part of the tool, while a further part of the tool is arranged opposite and has the cavity with the contour of the optical element.
• the cavity is also closed, either by sealing one part of the tool on the substrate or on another part of the tool.
• the injection process takes place, which transports the plastic material into the cavity, for example through a gating system of the tool.
• the metering system in this plastic processing process is arranged parallel to an axis of the device.
• the tool with the closed cavity is also arranged on this axis.
• LIM injection molding In addition to single-component or multi-component liquid materials, LIM injection molding also processes cross-linking materials, such as thermosetting plastics. For processing thermosets, the tool is usually heated. The processing of silicones usually has lower negative pressures than the processing of thermoplastics. Furthermore, a combination of LIM injection molding and thermoplastic processing is possible. In a further embodiment of the method, compression molding is used as the plastic processing process. In compression molding, the substrate is clamped with its second major surface on a part of the tool or inserted into this, while a further part of the tool, which has the cavity with the contour of the optical element, is arranged opposite. In contrast to LIM injection molding, however, the injection process takes place when the tool is open.
• the metering usually a static or a static-dynamic mixer - expediently arranged laterally of the tool and filled the cavities with the contour of the optical element directly with the plastic material.
• the plastic material is pressed into the cavity and fills it out.
• the amount of plastic material needed to fill the cavity is measured prior to insertion into the tool and placed in a separate container. From this container, the plastic material is transported with the tool closed by means of a metering system, such as a piston, into the cavity.
• a liquid plastic material such as a silicone material, is processed in this way.
• a film is introduced into the tool, preferably before the injection of the plastic material into the cavity.
• the film directly adjoins the cavity, which has the contour of the optical element. This can be achieved for example by means of a vacuum.
• the plastic material for the wrapping introduced between the film and substrate in the cavity. If the envelope is formed, the tool is opened again and the film is usually removed again.
• the film preferably has a thickness of between 20 ⁇ m and 100 ⁇ m, the limits being included.
• the film may, for example, comprise ethylene tetrafluoroethylene (ETFE) or consist of this material.
• a temperature-resistant film is preferably used, which is particularly preferably stable for temperatures between 100 0 C and 150 0 C, with the limits are included.
• the adhesion of the plastic material to the tool with the aid of a coating of the tool can be at least reduced.
• the tool may be coated within the areas that come in contact with the plastic material.
• a coating for example, is a layer that has Ni- PTFE or consists of this material.
• a silicone or a hybrid material is used as the plastic material for the wrapping.
• a hybrid material in this case is a material which has at least two main components, one of these main components being a silicone.
• the plastic material may contain further constituents as auxiliaries, such as substances to prevent yellowing (blue-age), plasticizers or
• Mold release agents usually have a small mass fraction of the plastic material. The majority of the plastic material has the major components.
• silicones as a coating offers the advantage that they are particularly temperature and UV-stable, and have a high permeability to visible radiation.
• the hybrid material about 50% silicone and about 50% percent (based on the mass) of epoxy resin.
• the hybrid material has between 10% and 70% (by mass) of epoxy resin, with the limits included.
• the plastic material has a bonding agent which improves the adhesion between the covering and the substrate or the semiconductor body.
• a substrate for example, a preformed housing, a preformed leadframe, a preformed leadframe with heat sink or a printed circuit board (PCB) can be used.
• the substrate may be ceramic or copper or consist of one of these materials.
• DBC substrate Direct Bonded Copper
• a DBC substrate comprises a core, such as a ceramic plate, and one or two copper plates bonded to the core.
• a DBC substrate has a high thermal conductivity.
• the thermal expansion coefficient of the DBC substrate can be adapted to the thermal expansion coefficient of a semiconductor body.
• a preformed housing may, for example, have a leadframe with at least two connection strips and a housing body, wherein the housing body is preferably formed from a molding compound around the leadframe, for example injection molded, pressed or injection-molded.
• the molding compound may for example be colored, white or black and have an epoxy with fillers, a silicone with fillers or a hybrid material with silicone and epoxy or consist of one of these materials.
• the leadframe preferably has anchoring points on its surface, which are produced, for example, by etching, and serve for anchoring between the leadframe and the housing body.
• a structured metallic leadframe which has at least one opening for mechanical fixation in the tool.
• a structured leadframe preferably has tape, for example an adhesive film, on the second main surface in order to avoid contamination with plastic material.
• a thin-film semiconductor chip is used as the semiconductor body.
• a thin-film semiconductor chip is a semiconductor body which has an epitaxially grown,
• the semiconductor layer sequence of the thin-film semiconductor chip is therefore preferably arranged on a carrier, which mechanically stabilizes the semiconductor body and is particularly different from the growth substrate for the semiconductor layer sequence of the semiconductor body.
• a reflective layer is preferably arranged between the carrier and the radiation-generating semiconductor layer sequence, which has the task of irradiating the radiation of the semiconductor layer sequence to the radiation-emitting front side of the semiconductor layer sequence
• the radiation-generating semiconductor layer sequence furthermore preferably has a thickness in the range of twenty micrometers or less, in particular in the region of ten micrometers.
• a thin-film semiconductor chip is, to a good approximation, a Lambertian surface radiator. Therefore it can be beneficial be to provide an optoelectronic device with a thin-film semiconductor chip as the radiation-generating semiconductor body with an optical element to selectively influence the radiation characteristic of the optoelectronic component.
• a wavelength-converting layer is applied to the front side of the semiconductor body.
• the wavelength-converting layer has at least one wavelength conversion substance that converts radiation of the semiconductor body of a first wavelength range into radiation of a second wavelength range that is different from the first wavelength range.
• the converted radiation of the second wavelength range is longer wavelength than the unconverted radiation of the first wavelength range.
• a wavelength-converting layer is described, for example, in the document WO 97/50132, the disclosure of which is incorporated herein by reference.
• the wavelength conversion material is selected from the group consisting of rare earth doped garnets, rare earth doped alkaline earth sulfides, rare earth doped thiogalates, rare earth doped aluminates, with Rare earth doped orthosilicates, rare earth doped chlorosilicates, rare earth doped alkaline earth silicon nitrides, with Rare earth metals doped oxynitrides and rare earth-doped aluminum oxynitrides.
• the wavelength conversion substance is a Ce-doped YAG wavelength conversion substance (YAG: Ce).
• Particles of the wavelength conversion substance can be embedded in a binder.
• the binder may be selected from the group consisting of the following materials: thermoplastic materials, polystyrene, latex, transparent rubbers, glass, polycarbonate, acrylate, teflon, silicates, waterglass, polyvinyl, silicone, epoxy, PMMA or hybrid materials with silicones , Epoxy resins or PMMA.
• the thickness of the wavelength-converting layer or the concentration of the wavelength conversion substance is selected such that part of the electromagnetic radiation of the first wavelength range emitted by the semiconductor body passes through the wavelength-converting layer unconverted.
• unconverted radiation of the first wavelength range and converted radiation of the second wavelength range mix, so that the optoelectronic component emits mixed radiation of radiation of the first wavelength range and radiation of the second wavelength range.
• an optoelectronic device which emits mixed light having a color locus in the white area of the CIE standard color chart.
• a semiconductor body is used, the electromagnetic radiation from the blue spectral range and a wavelength conversion substance that converts a portion of this blue radiation of the first wavelength range into yellow radiation.
• Wavelength conversion substance suitable for this purpose is, for example, YAG: Ce.
• a sealing layer is applied to the first main surface of the substrate.
• the sealing layer is applied to that part of the first main surface which is intended to be in contact with the part of the tool which has the contour of the optical element during the process, so that the sealing layer at least partially engages when the tool is closed forms common interface with the tool.
• the region of the first main surface of the substrate, to which the optical element is applied is free of the sealing layer.
• the sealing layer and the optical element have a common interface.
• the sealing layer is intended in particular to compensate for roughnesses of the substrate and thus contribute to a denser closing of the cavity. In this way, contamination of the substrate during the plastic processing process can be avoided, as can occur, in particular when using low-viscosity plastic materials, such as silicones.
• the Seal layer also take over the function of a bonding agent between the plastic material and the substrate.
• the sealing layer is expediently applied at least partially to the area of the first main side of the substrate to which the cladding is applied.
• the optical element and the sealing layer preferably have a common interface.
• the sealing layer is flexible and soft, so that it gives in closing the tool, but is not removed or damaged by the applied closing pressure from the substrate.
• the sealing layer has a thickness of between 5 ⁇ m and 100 ⁇ m, the limits being included.
• the sealing layer preferably has Shore hardnesses between A30 and 90, again including the limits.
• the sealing layer may be applied by a printing method such as screen printing, pad printing or inkjet printing.
• the sealing layer may comprise, for example, polyimide or silicone or consist of one of these materials.
• the sealing layer for example, have a dry resist or consist of this material.
• a sealing layer comprising or consisting of dry resist is suitably applied to the first major surface of the substrate by means of a lithographic process.
• a metallization is applied to the substrate as the sealing layer.
• the metallization preferably comprises or consists of one of the following materials: silver, gold, copper, tin. More preferably, the metallization is not thicker than 30 microns.
• the sealing layer is applied in a structured manner to the substrate. This advantageously allows air to escape from the closed cavity. This facilitates the filling of the cavity with plastic material and therefore leads to a better impression of the cavity.
• the sealing layer may also be a film, which is applied, for example structured on the substrate.
• the film may remain in the component or at least partially removed from the substrate.
• the sealing layer may comprise an adhesion promoter, which improves the adhesion between the sealing layer and the substrate.
• the mold core of the tool has a venting channel. In this way, advantageously, also a venting of the closed tool during the plastic processing process can be achieved.
• a surface of the mold core can also be set back so that it forms a venting channel together with a surface of the substrate or the sealing layer.
• the tool and in particular the cavity with the contour of the optical element are evacuated prior to the injection process. An evacuation of the tool usually leads advantageously to a particularly good filling of the cavities.
• a plurality of semiconductor bodies which are suitable for generating electromagnetic radiation are applied to the first main surface of the substrate.
• a cladding permeable to radiation of the optoelectronic semiconductor body is deposited, at least over the front side of the semiconductor bodies, in which the cladding is formed as an optical element using a closed cavity having the contour of the optical element.
• the substrate is separated into separate components. This enables the parallel production of several optoelectronic components. In this way, the process times for a component can be significantly shortened.
• a plurality of substrates are applied to a roll (roll-to-roll process). Furthermore, it is also possible that the substrates are arranged on a carrier tape which is rolled up into a roll.
• a plurality of components can likewise be manufactured in parallel, with the handling of the components to be manufactured being simplified, in particular when using a plastics processing process for applying the envelope, since the roll can be guided through the plastic processing process. In this way, for example, can be dispensed with pick-and-place devices for handling the components.
• the substrate has on its first main surface at least one elevation, which is preferably formed like a dome.
• the elevation is arranged in the region of the first main surface of the substrate, on which the casing is arranged.
• the substrate may have on its first main surface a structure as a centering aid for the mandrel of the tool.
• This structure is preferably arranged on the region of the first main surface of the substrate, which lies outside of the tool during the closing of the tool, which has the contour of the optical element.
• the centering aid is arranged on the first main surface of the substrate such that the tool is surrounded flush with the contour of the optical element by the centering aid.
• the substrate has on its first main surface at least one sealing element.
• the sealing element is formed circumferentially around the region of the first main surface, to which the optical element is applied.
• the sealing element particularly preferably forms a closed shape, that is to say that the sealing element is free of openings.
• the sealing element may for example form a closed ring - such as a circular ring - to the optical element.
• the sealing element terminates laterally with the optical element.
• the optical element and the sealing element have a common interface.
• the sealing element has the task of sealing the cavity, which has the contour of the optical element, with the tool closed.
• the sealing element therefore preferably closes tightly with at least the part of the tool which has the contour of the optical element.
• the sealing element closes off so tightly with the part of the tool that has the contour of the optical element that no or for the function of the component negligible little plastic material penetrates during the injection process from the cavity.
• the sealing element compensates for form surfaces and dimensional tolerances of the tool and / or of the substrate.
• the sealing element may be, for example, a sealing lip.
• the sealing element has a cross section which is at least partially triangular, trapezoidal or partially in the manner of an ellipse.
• the sealing element preferably has an elastic material.
• An elastic sealing element can be deformed with advantage when closing the tool, so that a particularly good seal between the tool and sealing element is formed.
• the substrate has a hard material relative to the sealing element, so that the substrate itself is not deformed when closing the tool.
• An elastic sealing element may for example comprise at least one of the following materials or consist of at least one of the following materials: silicones, elastomeric plastics, lacquers, such as solder resists.
• the sealing element is glued or printed, for example, on the first major surface of the substrate.
• the sealing element can also be incorporated into the substrate. If the sealing element and the substrate have different materials, then the sealing element can be incorporated into the substrate, for example by means of multicomponent injection molding. Furthermore, it is also possible that the substrate has a groove into which the sealing element is inserted.
• An optoelectronic component which can be produced, for example, according to the method described here, comprises in particular: a substrate having a first major surface and a second major surface opposite the first major surface,
• a semiconductor body adapted to emit electromagnetic radiation from a front side on the first major surface of the substrate
• the first and the second main surface are at least partially arranged plane-parallel to each other.
• Particularly preferred are parts of the two main surfaces over which the optical element is mounted, arranged plane-parallel to each other.
• the optoelectronic component has a sealing element, then this is particularly preferably arranged on the plane-parallel region of the first main surface of the substrate.
• a closed cavity with the contour of the optical element can be used to apply the enclosure, since the substrate with the semiconductor body is suitable as Inserted into the cavity to be inserted.
• a substrate for example, in addition to a mounting surface for the semiconductor body further comprises elements which are arranged tilted with respect to the main surfaces, such as electrical connection parts, this is not suitable because the cavity with the contour of the optical element can not be closed.
• a wavelength-converting layer is arranged between the front side of the semiconductor body and the cladding.
• the envelope comprises a silicone or a hybrid material.
• the hybrid material has 50% silicone and 50% epoxy resin.
• the hybrid material comprises between 10% and 70% epoxy resin, with the limits included.
• a preformed housing, a preformed leadframe, a preformed leadframe with heat sink or a printed circuit board (PCB) are used as the substrate.
• the substrate has ceramic and / or copper.
• the semiconductor body is a thin-film semiconductor chip.
• a sealing layer is applied to the first main surface of the substrate.
• the sealing layer has, for example, dry resist. Alternatively it can be applied as a sealing layer and a metallization.
• the sealing layer is applied structured in a development.
• the substrate has on its first main surface at least one elevation, which is preferably formed like a dome.
• the substrate has on its first main surface a structure as a centering aid for the mold core.
• the substrate has on its first main surface at least one sealing element.
• the sealing element is, for example, circumferentially formed around the region of the first main surface on which the optical element is applied.
• a cross section of the sealing element is, for example, at least partially triangular, trapezoidal or in the manner of an ellipse.
• the sealing element ends laterally with the optical element.
• the sealing element and the optical element have a common interface.
• the sealing element comprises an elastic material.
• the sealing element is glued to the first main surface of the substrate, printed or incorporated into the substrate.
• FIG. 1 shows a schematic sectional illustration through a substrate having an optoelectronic semiconductor body according to an exemplary embodiment
• FIG. 2 a schematic sectional view of a device during a method step according to an exemplary embodiment
• FIG. 3 a schematic sectional view of the device according to FIG. 2 during a further method step
• FIGS. 4A to 4D show schematic sectional representations of a device in various stages of the method according to one exemplary embodiment
• FIG. 4E a schematic sectional view of the device during an alternative embodiment of the method step according to FIG. 4B, FIG.
• FIG. 5 a schematic sectional view through an optoelectronic component according to an exemplary embodiment during a method step, FIG.
• FIG. 6 a schematic sectional view through a further optoelectronic component according to an exemplary embodiment during a method step, FIG.
• FIG. 7 shows a schematic sectional representation through a further optoelectronic component according to an exemplary embodiment during a method step
• FIG. 8 shows a schematic sectional illustration through two optoelectronic components according to a further exemplary embodiment during a method step
• FIGS. 9, 10 and 11 are schematic sectional views through an optoelectronic component during a respective process stage according to an exemplary embodiment
• FIGS. 12A to 12E schematic sectional views through a sealing element according to each embodiment
• FIGS 13 to 15 schematic sectional views through an optoelectronic device according to one embodiment.
• the substrate 1 has a first main area 2 and a second main area 3, wherein a radiation-generating semiconductor body 4, for example a thin-film semiconductor chip, is mounted on the first main area 2.
• the semiconductor body 4 is in this case electrically conductively connected to a connection point on the first main surface of the substrate, in the present case by means of a bonding wire 6.
• the substrate 1 is, for example, a preformed housing, a preformed leadframe, a preformed leadframe with heat sink or a printed circuit board.
• the substrate 1 may for example comprise ceramic or copper or consist of one of these materials.
• a ceramic or a copper plate or a laminate of these materials such as a DBC substrate.
• a structured metallic leadframe which has at least one opening for mechanical fixation in the tool.
• Such a structured leadframe preferably has tape on the second main surface 3 in order to avoid contamination with plastic material.
• the device according to the embodiment of Figure 2 comprises two platens 7, 8 and a metering 9, in this case a screw, and two containers 10, 11, each with a pump 12.
• the platens 7, 8 are arranged parallel to each other.
• the clamping plates 7, 8 and the screw 9 are arranged on a common axis 13.
• the worm 9 can be moved along the axis 13 and rotate about the axis 13 (see arrows in Figure 2).
• the two containers 10, 11 are intended to comprise a plastic material 14. This plastic material can in each case be transported out of the container by means of the pump in the direction of the screw 9, as the arrows in FIG. 2 indicate.
• each clamping plate 7, 8 part of a tool 15 is clamped in the apparatus according to FIG.
• the part of the tool 15, which is clamped on the screw-side clamping plate, has a sprue system 16 and a mold core 17 with a cavity 18.
• the cavity In the present case, 18 is designed in accordance with a lens 19, that is to say that it has the contour of the lens 19.
• a further clamping plate 7 is arranged, on which a further part of the tool 15 is mounted.
• This part of the tool 15 has a further cavity 18, into which the substrate 1 with the electrically contacted optoelectronic semiconductor body 4 according to FIG. 1 is inserted as an insert part 20.
• the first main surface 2 and the second main surface 3 of the substrate 1 are formed plane-parallel to one another. Furthermore, the radiation-emitting front side 5 of the semiconductor body 4 and the rear side 30 of the semiconductor body 4 opposite the front side are arranged plane-parallel to one another and plane-parallel to the first main surface 2 or the second main surface 3 of the substrate 1. Furthermore, the two clamping plates 7, 8 are plane-parallel to the first main surface 2 and the second main surface 3 of the substrate 1 and thus also plane-parallel to the front 5 and the back 30 of the semiconductor body 4 is formed.
• the tool 15 is closed such that the two parts of the tool touch each other and laterally of the cavities 18 a common interface form as shown in Figure 3.
• the cavity 18 of the tool 15 is disposed above the optoelectronic semiconductor body 4 and There forms a closed cavity in the form of an optical element 19, in this case a lens.
• the part of the tool with the cavity 18, which is shaped in accordance with the lens 19, is designed such that the closed cavity 18 is formed together with the first main surface 2 of the substrate 1.
• the two parts of the tool 15 touch each other and form a common interface.
• the one part of the tool 15 touches the first main surface 2 of the substrate 1 and forms with this a common interface.
• the worm 9 When the tool 15 is closed, the worm 9 is moved along the axis 13 in the direction of the tool 15 to an injection point 21 of the sprue system 16. By rotating the screw 9, plastic material 14 is injected through the gate system 16 into the closed cavity 18.
• Embodiment according to Figures 2 and 3 is liquid injection molding molding.
• This plastic processing process advantageously enables a mass-production-capable shaping of the envelope, wherein this is simultaneously formed as an optical element 19, which forms the emission characteristic of the optoelectronic component in a desired manner. Cycle times between 20 sec and 300 sec can be achieved with Liquid Injection Molding Injection Molding.
• the plastic material 14 for example, a silicone or a hybrid material, the Silicone and epoxy resin is used.
• the hybrid material may have between 10% and 70% epoxy, preferably 50%.
• silicones and hybrid materials in the uncured state have low viscosities - these are typically between 1 Pas and 100 Pas, with the limits included - good closure of the cavity 18 is important to contamination of the substrate surface side of the cavity 18 during the injection process avoid. Such impurities may be particularly troublesome in the subsequent electrical contacting of the optoelectronic component and require expensive additional assembly steps in the production of the optoelectronic component.
• the cavity 18 can be evacuated during the injection process.
• channels are provided in the tool, which connect the cavity with a vacuum pump (not shown in the figures).
• the substrate 1 has two opposite, plane-parallel main surfaces 2, 3, from which no further elements project, for example electrical connection parts
• the substrate 1 with the semiconductor body 4 is particularly well suited to be inserted as an insert into the cavity 18 of a tool 15, as the embodiment of Figures 2 and 3 shows.
• elements, for example electrical connection parts can very well protrude on the side of the two main surfaces 2, 3.
• the embodiment according to FIGS. 4A to 4D is a method in which, in contrast to the method according to FIGS. 2 and 3, compression molding is used as the plastic processing process.
• FIGS. 4A to 4D show the parallel production of a plurality of optoelectronic semiconductor components.
• a plurality of semiconductor bodies 4 are arranged on a first main surface 2 of a substrate 1 and in each case electrically contacted with a bonding wire 6.
• the substrate 1 is disposed on a part of a tool 15, for example by being inserted as an insert in a cavity 18 of the tool 15.
• a further part of the tool 15 is arranged in parallel, which has, matching each semiconductor body 4, a cavity 18 which has the inverse shape, that is to say the contour, of a lens 19.
• a metering system 9 is arranged, which is suitable for transporting plastic material 14 into the cavities 18 during an injection process when the tool 15 is open.
• the metering system 9 is a static-dynamic mixer, for example a metering unit with mixing piece. Alternatively, however, it is also possible to use a screw.
• the two tool halves 15 are closed, as shown schematically in Figure 4C by an arrow.
• the plastic material 14 fills the cavities 18 and forms an envelope in the form of the optical element 19 via the Front sides of the respective semiconductor body 4, as shown in Figure 4D.
• a preformed housing, a preformed leadframe, a preformed leadframe with a heat sink, a DBC substrate or a printed circuit board can be used as substrate 1 in the exemplary embodiment according to FIGS. 4A to 4D become.
• the substrate 1 may comprise, for example, copper or ceramic or consist of one of these materials.
• plastic material 14 in the embodiment according to FIGS. 4A to 4D, the same materials can be used as in the exemplary embodiment according to FIGS. 1, 2 and 3.
• a film 28 can be introduced between the cavities 18 and the substrate 1 before the injection of the plastic material 14 with the metering system 9 into the opened tool 15.
• the film 28 is arranged such that it directly adjoins the cavities 18 when closing the tool 15 and thus leads to a better impression of the cavities 18.
• the film 28 prevents plastic material 14 from coming into contact with the tool wall and adversely adhering there.
• a vacuum can be used that pulls the film 28 in the direction of the tool wall.
• the film 28 comes to lie when closing the tool 15 between the substrate 1 and the part of the tool 15 having the cavity 18 with the contour of the optical element.
• the film 28 is adjacent to one Side directly to the substrate 1, that is, it forms a common interface with the substrate 1 from.
• the film 28 directly adjoins the tool 15, that is, it forms a common interface with the tool 15.
• the film 28 can compensate for unevenness of the substrate 1 and also of the tool 15, as a result of which at least the amount of plastic material 14 that can reach the substrate 1 from the cavity 18 is advantageously reduced.
• the tool 15 is opened again and the film 28 is removed again.
• a temperature-resistant film 28 is preferably used, which is particularly preferably for temperatures between 100 0 C and 150 0 C resistant, the limits are included.
• the film 28 preferably has a thickness of between 20 ⁇ m and 100 ⁇ m, the limits being included.
• the film 28 may, for example, comprise ethylene tetrafluoroethylene (ETFE) or consist of this material.
• ETFE ethylene tetrafluoroethylene
• a sealing layer 22 may also be applied to the substrate 1.
• a sealing layer 22 is used in conjunction with a tool whose material does not adhere to the plastic material.
• the tool may be coated, for example.
• Exemplary embodiment of FIG. 5 has as substrate 1 a preformed leadframe with a heat sink. On the First main surface 2 of the substrate 1 is an opto-electronic, suitable for generating radiation semiconductor body 4 is mounted. The optoelectronic semiconductor body 4 is electrically contacted by means of a bonding wire 6. Laterally of the semiconductor body 4, a sealing layer 22 is applied to the first main surface 2 of the substrate 1, which is intended to compensate for unevenness of the substrate 1.
• the optoelectronic component according to the exemplary embodiment of FIG. 5 comprises an envelope of the semiconductor body over the front side, which is embodied in the form of an optical element 19, in the present case a lens, and is permeable to the electromagnetic radiation of the semiconductor body 4.
• the envelope of the semiconductor body 4 is produced using a plastic processing process, in the present case liquid injection molding, for example as already described with reference to FIGS. 1 to 3.
• FIG. 5 furthermore shows a mold core 17 of a tool 15, which has a cavity 18 with a lens contour, as has already been described above.
• the mold core 17 has a lateral injection point 21, through the plastic material 14 during the
• a sealing layer 22 is applied to the first main surface 2 of the substrate 1 in the embodiment of FIG.
• the sealing layer 22 is applied in particular in the region of the substrate 1, on which the mold core 17 at Close the tool 15 touches down.
• the sealing layer 22 here has the task of compensating for unevenness of the substrate, as they may be present in particular in ceramic substrates.
• the sealing layer 22 has, for example, a dry resist or consists of this material.
• the sealing layer 22 can be applied, for example, by means of a printing process, such as screen printing, pad printing, inkjet processes.
• a metallization or a foil can be applied to the first main surface 2 of the substrate 1.
• the sealing layer 22 may also be applied in a structured manner, for example by having channels for venting the cavity during the injection process.
• the sealing layer 22 and the optical element 19 preferably have a common interface.
• a surface 171 of the mold core 17 of the tool 15 has a recess on the side opposite the injection point 21 relative to the sealing layer 22, so that the recess and the sealing layer 22 form a ventilation channel 29.
• the surface 171 of the mold core 17 is set back such that it forms a ventilation channel 29 together with the sealing layer 22.
• Embodiment of Figure 6 is equal to the substrate 1 to the optoelectronic component of the embodiment of Figure 5.
• the substrate 1 laterally comprises a structure 23, in this case a slope, which may be formed, for example, circumferentially around the semiconductor body 4 which serves as a centering aid for the mold core 17 during the injection molding process.
• the structure 23 is expediently arranged on the substrate 1 such that it runs around the mold core 17 when the tool 15 is closed.
• the substrate 1 has two connection strips 31, which protrude laterally from a housing body 32.
• the connection strips 31 are in this case formed plane-parallel to the second main surface 3 of the substrate 1.
• the part of the first main surface 2 is also formed plane-parallel to the second main surface 3, which lies within the centering and on which the semiconductor body 4 and the sealing layer 22 is arranged.
• the housing body 32 may, for example, comprise at least one of the following thermoplastic plastics or consist of at least one of the following thermoplastic plastics: PPA, LPC, PEEK.
• the optoelectronic component according to the exemplary embodiment of FIG. 7 also differs from the optoelectronic components according to FIGS. 5 and 6 essentially by the design of the substrate 1.
• the substrate 1 used here is a base plate, for example made of ceramic, with a metallization as the sealing layer 22 , Furthermore, the first main surface 2 of the Substrate 1 adjacent to the sealing layer 22 on a circumferential dome-like elevation 24, which protrudes into the enclosure and this better anchored to the substrate 1.
• the anchoring can be caused for example by an increase in the contact area between the envelope and substrate due to the dome-like elevation 24 or by an undercut of the dome-like elevation 24 to the outside or inside.
• a circumferential dome-like elevation 24 a single or a plurality of separate dome-like elevations on the first main surface 2 of the substrate 1 may also be used.
• FIG. 8 shows an exemplary embodiment of a method in which a plurality of contiguous substrates 1 are processed simultaneously in a roll-to-roll process - in the present example two substrates 1 are shown.
• a substrate for example, lead frames can be used, which are applied to a roll.
• an optoelectronic semiconductor body 4 is applied in each case, which is contacted with a bonding wire 6 electrically conductive.
• the substrate 1 On the side of the semiconductor body 4, the substrate 1 has on its first main surface 2 a sealing layer 22, as has already been described with reference to FIGS. 5 to 7.
• the sealing layer 22 is in this case arranged on the parts of the first main surface 2, which run plane-parallel to the second main surface 3.
• FIG. 8 shows a mold core 17 with two cavities 18, which have a lens contour and are arranged above the semiconductor bodies 4.
• the cavities 18 are interconnected with channels through which the plastic material 14 can penetrate.
• the mold core 17 is laterally set back to allow venting of the cavities 18.
• the wavelength-converting layer 25 comprises particles of a wavelength conversion substance 26 embedded in a binder 27.
• Wavelength conversion material 26 can be used, for example, one of the materials already described in the general description part. Likewise, as binder 27, one of the materials already described in the general description part is suitable.
• a plurality of optoelectronic semiconductor bodies 4 on a substrate 1 or on a plurality of contiguous substrates 1 and then each apply a cladding over the front of the semiconductor body 4, wherein the cladding as an optical element 19 using a closed cavity 18 is formed, which has the contour of the optical element 19.
• a plastic processing process such as LIM injection molding or compression molding, as already described above, are used.
• a tool 15 is used which has a plurality of cavities 18 with the contour of the optical element 19. After applying the coating the individual optoelectronic components are separated, for example by sawing.
• the substrate 1 is formed as a preformed housing.
• the preformed housing includes a housing body 32 having plastic and two electrical terminal strips 31 that are part of a leadframe.
• the housing body 32 has a first main surface 2 and a second main surface 3, the second main surface 3 facing the first main surface 2. Furthermore, the housing body 32 has in its first main surface 2 a recess 33 into which the semiconductor body 4 is mounted.
• the regions of the first main surface 2, which are arranged laterally of the recess 33, are in this case formed plane-parallel to the second main surface 3.
• the electrical connection strips 31 are formed plane-parallel to the second main surface 3.
• connection strips 31 are introduced into the housing body 32 such that in each case a part of the surface of each connection strip 32 forms part of the surface of the recess 33.
• the semiconductor body 4 is mounted in the recess 33 in such a way that there is an electrically conductive connection between its rear side 30 and the one connection strip 31. This can be achieved for example by means of an electrically conductive adhesive.
• the semiconductor body 4 is electrically conductively connected to the other terminal strip 31 via a bonding wire 34 on its front side 5.
• a sealing element 35 is applied to the areas of the first main surface 2 of the housing body 32, which is formed plane-parallel to the second main surface 3.
• the sealing element 35 is arranged so completely peripherally around the recess 33 that the sealing element 35 forms a closed ring around the recess 33.
• the sealing element 35 has an elastic material and a cross-sectional area which is designed in the manner of a triangle.
• the housing 1 with the semiconductor body 4 mounted in the recess 33 is inserted into a part of a tool 15.
• Another part of the tool 15 has the cavity 18 with the contour of the optical element 19, according to which the enclosure is to be formed.
• the part of the tool 15 with the contour of the optical element 19 is so on the plane parallel to the second main surface 3 part of the first main surface 2 of the substrate 2, the contour of the optical element 19, a closed cavity 18 above the semiconductor body 4 trains.
• the sealing element 35 and the cavity 18 of the tool 15, which has the contour of the optical element 19, in this case are arranged to each other such that the contour of the optical element 19 to be produced with the sealing element 35 terminates laterally.
• a closing pressure is now applied to the tool 15 so that the sealing element 35 is deformed and the cavity 18 is sealed laterally.
• the closing pressure in usually reduced, so that reduced forces act on the component.
• the cavity 18 can now be filled with the plastic material 14, for example a silicone.
• the sealing element 35 reduces at least the amount of plastic material 14 that reaches the first main surface 2 of the substrate 1.
• the sealing elements 35 according to the exemplary embodiments of FIGS. 12A to 12E are applied to the first main surface 2 of the substrate 1, wherein the sealing elements 35 according to the exemplary embodiments of FIGS. 12A to 12C have a cross section which is formed in the manner of a triangle.
• the sealing element 35 according to the exemplary embodiment of FIG. 12A has the same material as the substrate 1 and is integrated in the substrate 1.
• the sealing element 35 is manufactured together with the substrate 1, for example using an injection molding method.
• the sealing element 35 according to the exemplary embodiment of FIG. 12B has a material that is different from the material of the substrate 1. Furthermore, the sealing element 35 is incorporated in the substrate 1. If the substrate 1 is produced by an injection molding process, then the substrate 1 and the sealing element 35 can be manufactured, for example, by a multi-component injection molding process. Alternatively, it is also possible that the substrate 1 has a groove into which a separately manufactured sealing element 35 is inserted.
• the sealing element 35 is applied to the first main side 2 of the substrate 1, for example by gluing or printing.
• the sealing element 35 according to the embodiment of FIG. 12D unlike the sealing elements 35 according to the exemplary embodiments of FIGS. 12A to 12C, is designed as a circumferential ring with a trapezoidal cross-section. It is like the sealing element 35 according to the embodiment of Figure 12A integrated into the substrate 1, for example by injection molding.
• the sealing element 35 according to the embodiment of Figure 12E in contrast to the sealing elements 35 according to the embodiments of Figures 12A to 12C has a cross-section which is partially formed in the manner of an ellipse. Like the sealing elements 35 according to the exemplary embodiments of FIGS. 12A and 12D, it is integrated into the substrate 1, for example by means of injection molding.
• the sealing elements 35 according to the embodiments of Figures 12A to 12E preferably have a height between 0.05 mm and 0.5 mm, the limits are included.
• the sealing element 35 is made, for example, from the same material as the housing body 32.
• the sealing element 35 consists for example of one of the following thermoplastic plastics or has at least one of the following thermoplastic plastics: PPA, LCP, PEEK.
• the sealing member 35 may be made of an elastic or deformable material, while the substrate is made of a rigid material.
• the substrate for example the housing body 32 in this case has, for example, one of the thermoplastics described above, while the sealing element 35, for example, a silicone material, an elastomeric plastic or a paint, such as a Lötstopplack has.
• Embodiment of Figure 13 is made for example with the steps of the method, as has already been described with reference to Figures 9 to 11. It therefore has the features of the optoelectronic component, which have already been described with reference to the figures 9 to 11.
• the electrical connection strips 31 of the component according to the exemplary embodiment of FIG. 13 are bent in the direction of the second main surface 3 of the substrate 1.
• the optical element 19 in the optoelectronic component according to FIG. 13 has silicone material and is designed as a lens 19.
• the lens 19 has a lens base 36 which terminates laterally with the sealing element 35.
• the sealing element 35 has a trapezoidal cross-sectional area, as already described with reference to FIG. 12D.
• Embodiment of Figure 14 in contrast to the optoelectronic component according to the embodiment of Figure 13 on a circuit board as a substrate 1.
• a printed circuit board for example, a metal core board may be used.
• the printed circuit board may comprise a ceramic or a glass-fiber-reinforced epoxy resin.
• the circuit board may include any of the following materials commonly used in the electronics industry: FR4, FR5, BT.
• the circuit board has on its first main surface 2 a metallization 37, which is further formed on the side surfaces of the circuit board 1 and partially on the second main surface 3 of the circuit board.
• the semiconductor body 4 is mounted on the metallization 37 on the first main surface 2 of the printed circuit board 1 such that an electrically conductive connection is formed between the rear side 30 of the semiconductor body 4 and the metallization 37.
• the front side 5 of the semiconductor body 4 is electrically conductively connected to a further part of the metallization 37, wherein the metallization 37 is structured such that a short circuit is avoided.
• the sealing element 35 is applied circumferentially around the semiconductor body 34 in direct contact with the metallization 37 of the printed circuit board 1.
• the sealing element 35 may be printed or glued to the metallization 37, for example.
• the metallization 37 forms side of the sealing element 35 in each case an external connection point 38, which is intended to contact the optoelectronic component externally electrically.
• the remaining elements and features of the optoelectronic component according to the exemplary embodiment of FIG. 14, in particular the lens 19 and the lens base 36, may be formed, for example, in accordance with the exemplary embodiment of FIG. They are therefore not executed in detail to avoid repetition.
• the optoelectronic component according to the exemplary embodiment of FIG. 15 also essentially differs from the optoelectronic component according to FIGS. 13 through the substrate 1.
• the remaining elements and features of the optoelectronic component according to FIG. 15 can be used, for example, as in FIG. 13 or FIGS 9 to 11 already described, be executed.
• the substrate 1 of the optoelectronic component according to FIG. 15 comprises, like the optoelectronic component according to the exemplary embodiment of FIG. 13, a preformed housing body 32 in which an electrically conductive strip 39 runs, which at least partially forms the surface of the recess 33 of the housing body 32, in which the semiconductor body 4 is mounted.
• the electrically conductive strip 39 does not form two connection strips laterally of the housing body 32. Rather, the electrically conductive strip is formed laterally of the housing body 32 in each case as an external connection point 38, for example as a solder contact, which in the present case one to the second Main surface 3 of the housing body 32 has plane-parallel surface.
• the remaining elements and features of the optoelectronic component according to the exemplary embodiment of FIG. 15, in particular the lens 19 and the lens base 36 and the sealing element 35, may, for example, likewise be designed in accordance with the exemplary embodiment of FIG. They are therefore not executed in detail to avoid repetition.

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• Engineering & Computer Science (AREA)
• Mechanical Engineering (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Led Device Packages (AREA)
• Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
• Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

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• 2007
  • 2007-04-16 DE DE102007017855A patent/DE102007017855A1/de not_active Withdrawn
• 2008
  • 2008-04-10 TW TW097112933A patent/TWI368339B/zh active
  • 2008-04-14 WO PCT/DE2008/000626 patent/WO2008125096A2/de not_active Ceased
  • 2008-04-14 CN CN200880012272.6A patent/CN101678569B/zh active Active
  • 2008-04-14 JP JP2010503349A patent/JP2010524269A/ja active Pending
  • 2008-04-14 EP EP08757937.1A patent/EP2136981B1/de active Active
  • 2008-04-14 KR KR1020097023449A patent/KR101559593B1/ko active Active
  • 2008-04-14 US US12/595,887 patent/US8435806B2/en active Active

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