WO2008123421A1 - Appareil d'implantation ionique - Google Patents

Appareil d'implantation ionique Download PDF

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Publication number
WO2008123421A1
WO2008123421A1 PCT/JP2008/056106 JP2008056106W WO2008123421A1 WO 2008123421 A1 WO2008123421 A1 WO 2008123421A1 JP 2008056106 W JP2008056106 W JP 2008056106W WO 2008123421 A1 WO2008123421 A1 WO 2008123421A1
Authority
WO
WIPO (PCT)
Prior art keywords
strip
ion
ion beam
current density
density distribution
Prior art date
Application number
PCT/JP2008/056106
Other languages
English (en)
Japanese (ja)
Inventor
Yasuyuki Tsuji
Original Assignee
Mitsui Engineering & Shipbuilding Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Engineering & Shipbuilding Co., Ltd. filed Critical Mitsui Engineering & Shipbuilding Co., Ltd.
Priority to CN2008800043315A priority Critical patent/CN101606217B/zh
Priority to KR1020097016138A priority patent/KR101071581B1/ko
Publication of WO2008123421A1 publication Critical patent/WO2008123421A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24542—Beam profile

Abstract

L'invention concerne un appareil d'implantation ionique (10) qui comporte une source d'ions (22) pour générer un faisceau d'ions ; une section (20) de façonnage de faisceau pour façonner le faisceau en un faisceau de type bande ; une section (30) de transport de faisceau qui concentre le faisceau d'ions de type bande par amincissement du faisceau dans la direction de l'épaisseur et puis irradie un substrat (62) devant être traité par le faisceau ; une section de traitement (60) qui irradie le substrat (62) avec le faisceau d'ions de type bande ; et un élément de lentille (40) qui ajuste une distribution de densité de courant dans laquelle une valeur totale des densités de courant du faisceau d'ions de type bande dans la direction de l'épaisseur du faisceau est représentée par la distribution dans la direction de largeur de faisceau. L'élément de lentille (40) est disposé dans une région au voisinage d'une position de concentration de faisceau d'ions (52) pour ajuster la distribution de densité de courant du faisceau d'ions. La distribution de densité de courant est ajustée de façon précise en courbant de façon fine une partie du faisceau d'ions de type bande dans la surface de faisceau d'ions de type bande.
PCT/JP2008/056106 2007-03-29 2008-03-28 Appareil d'implantation ionique WO2008123421A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2008800043315A CN101606217B (zh) 2007-03-29 2008-03-28 离子注入装置
KR1020097016138A KR101071581B1 (ko) 2007-03-29 2008-03-28 이온 주입 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007086525A JP4288288B2 (ja) 2007-03-29 2007-03-29 イオン注入装置
JP2007-086525 2007-03-29

Publications (1)

Publication Number Publication Date
WO2008123421A1 true WO2008123421A1 (fr) 2008-10-16

Family

ID=39830906

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/056106 WO2008123421A1 (fr) 2007-03-29 2008-03-28 Appareil d'implantation ionique

Country Status (5)

Country Link
JP (1) JP4288288B2 (fr)
KR (1) KR101071581B1 (fr)
CN (1) CN101606217B (fr)
TW (1) TWI371055B (fr)
WO (1) WO2008123421A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015050382A (ja) * 2013-09-03 2015-03-16 富士通セミコンダクター株式会社 半導体装置の製造方法、及び半導体製造装置

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5226577B2 (ja) * 2009-03-27 2013-07-03 三井造船株式会社 イオン注入装置及びイオンビームの調整方法
JP5316899B2 (ja) 2010-04-13 2013-10-16 日新イオン機器株式会社 イオン注入方法およびイオン注入装置
CN102800550B (zh) * 2011-05-27 2015-08-26 日新离子机器株式会社 离子注入装置
JP5585788B2 (ja) * 2011-05-27 2014-09-10 日新イオン機器株式会社 イオン注入装置
JP5648919B2 (ja) * 2011-08-17 2015-01-07 日新イオン機器株式会社 イオン注入装置
JP5941377B2 (ja) * 2012-08-31 2016-06-29 住友重機械イオンテクノロジー株式会社 イオン注入方法およびイオン注入装置
TWI501286B (zh) * 2014-06-27 2015-09-21 Advanced Ion Beam Tech Inc 離子佈植機
JP7132828B2 (ja) * 2018-11-13 2022-09-07 住友重機械イオンテクノロジー株式会社 イオン注入装置およびビームパーク装置
CN111261477B (zh) * 2018-12-03 2022-08-02 北京中科信电子装备有限公司 一种双出口平行透镜
CN110643954B (zh) * 2019-10-21 2024-03-01 上海新柯隆真空设备制造有限公司 镀膜设备、离子源、以及栅极结构
CN114724910A (zh) * 2022-06-10 2022-07-08 浙江中科尚弘离子装备工程有限公司 一种带状离子束注入系统

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005327713A (ja) * 2004-05-14 2005-11-24 Nissin Ion Equipment Co Ltd イオン注入装置
JP2007273368A (ja) * 2006-03-31 2007-10-18 Ihi Corp イオン注入装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005327713A (ja) * 2004-05-14 2005-11-24 Nissin Ion Equipment Co Ltd イオン注入装置
JP2007273368A (ja) * 2006-03-31 2007-10-18 Ihi Corp イオン注入装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015050382A (ja) * 2013-09-03 2015-03-16 富士通セミコンダクター株式会社 半導体装置の製造方法、及び半導体製造装置

Also Published As

Publication number Publication date
JP2008243765A (ja) 2008-10-09
CN101606217A (zh) 2009-12-16
JP4288288B2 (ja) 2009-07-01
TW200903555A (en) 2009-01-16
KR20090108059A (ko) 2009-10-14
CN101606217B (zh) 2011-11-02
KR101071581B1 (ko) 2011-10-10
TWI371055B (en) 2012-08-21

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