WO2008123242A1 - Substrat pour une croissance épitaxiale et procédé de croissance épotaxiale - Google Patents

Substrat pour une croissance épitaxiale et procédé de croissance épotaxiale Download PDF

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Publication number
WO2008123242A1
WO2008123242A1 PCT/JP2008/055561 JP2008055561W WO2008123242A1 WO 2008123242 A1 WO2008123242 A1 WO 2008123242A1 JP 2008055561 W JP2008055561 W JP 2008055561W WO 2008123242 A1 WO2008123242 A1 WO 2008123242A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
epitaxial growth
epitaxial
epitaxial layer
temperature
Prior art date
Application number
PCT/JP2008/055561
Other languages
English (en)
Japanese (ja)
Inventor
Kenji Suzuki
Tsutomu Sato
Ryuichi Hirano
Original Assignee
Nippon Mining & Metals Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining & Metals Co., Ltd. filed Critical Nippon Mining & Metals Co., Ltd.
Priority to JP2009509112A priority Critical patent/JP5520045B2/ja
Publication of WO2008123242A1 publication Critical patent/WO2008123242A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Led Devices (AREA)

Abstract

L'invention porte sur un substrat pour une croissance épitaxiale qui permet d'obtenir une couche épitaxiale ayant des caractéristiques PL uniformes lorsque la couche épitaxiale est amenée à croître sur un substrat semi-conducteur composite des Groupes III-V, tel qu'un substrat d'InP. L'invention porte également sur un procédé de croissance épitaxiale. De façon spécifique, pendant un procédé dans lequel une couche épitaxiale composée d'un semi-conducteur composite, telle qu'une couche de InGaAsP, est déposée par condensation de vapeur sur un substrat semi-conducteur des Groupes III-V, tel qu'un substrat d'InP, on contrôle la température préfixée de façon adéquate en prenant en considération que la température de substrat (température de croissance) varie en raison de la dimension (grand axe) d'une piqûre d'attaque chimique elliptique au dos du substrat.
PCT/JP2008/055561 2007-03-27 2008-03-25 Substrat pour une croissance épitaxiale et procédé de croissance épotaxiale WO2008123242A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009509112A JP5520045B2 (ja) 2007-03-27 2008-03-25 エピタキシャル成長用基板及びエピタキシャル成長方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007082203 2007-03-27
JP2007-082203 2007-03-27

Publications (1)

Publication Number Publication Date
WO2008123242A1 true WO2008123242A1 (fr) 2008-10-16

Family

ID=39830735

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/055561 WO2008123242A1 (fr) 2007-03-27 2008-03-25 Substrat pour une croissance épitaxiale et procédé de croissance épotaxiale

Country Status (3)

Country Link
JP (1) JP5520045B2 (fr)
TW (1) TWI406981B (fr)
WO (1) WO2008123242A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020528392A (ja) * 2017-07-25 2020-09-24 ベイジン トンメイ クリスタル テクノロジー カンパニー リミテッド 裏側にピットを有するリン化インジウムウエハ、ならびに、それを製造するための方法およびエッチング液

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0632699A (ja) * 1992-07-14 1994-02-08 Japan Energy Corp 半絶縁性ＩｎＰ単結晶の製造方法
JPH07211688A (ja) * 1993-05-17 1995-08-11 Japan Energy Corp 化合物半導体基板の製造方法
JPH08301697A (ja) * 1995-05-09 1996-11-19 Japan Energy Corp 半絶縁性ＩｎＰ単結晶の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6187339A (ja) * 1984-10-05 1986-05-02 Toshiba Corp リン化インジウム結晶のエツチング方法
JPS62252140A (ja) * 1986-04-25 1987-11-02 Nippon Mining Co Ltd ＩｎＰウエ−ハの洗浄方法
JPH05166785A (ja) * 1991-12-18 1993-07-02 Nikko Kyodo Co Ltd 半導体ウェーハの保存方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0632699A (ja) * 1992-07-14 1994-02-08 Japan Energy Corp 半絶縁性ＩｎＰ単結晶の製造方法
JPH07211688A (ja) * 1993-05-17 1995-08-11 Japan Energy Corp 化合物半導体基板の製造方法
JPH08301697A (ja) * 1995-05-09 1996-11-19 Japan Energy Corp 半絶縁性ＩｎＰ単結晶の製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
CHAMBEL V. ET AL.: "Formation of GaAs three-dimensional objects using AlAs "facet-forming" sacrificial layer and H3PO4, H2O2, H2O based solution", J. APPL. PHYS., vol. 94, no. 7, 1 October 2003 (2003-10-01), pages 4643 - 4648, XP012060311 *
MOUTON A. ET AL.: "Etching of InP by H3PO4, H2O2 Solutions", JPN. J. APPL. PHYS., vol. 29, no. 10, 1990, pages 1912 - 1913, XP000223979 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020528392A (ja) * 2017-07-25 2020-09-24 ベイジン トンメイ クリスタル テクノロジー カンパニー リミテッド 裏側にピットを有するリン化インジウムウエハ、ならびに、それを製造するための方法およびエッチング液
JP7095213B2 (ja) 2017-07-25 2022-07-05 ベイジン トンメイ クリスタル テクノロジー カンパニー リミテッド 裏側にピットを有するリン化インジウムウエハ、ならびに、それを製造するための方法およびエッチング液

Also Published As

Publication number Publication date
JP5520045B2 (ja) 2014-06-11
TWI406981B (zh) 2013-09-01
JPWO2008123242A1 (ja) 2010-07-15
TW200902776A (en) 2009-01-16

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