WO2008117691A1 - 有機ｅｌ素子、有機ｅｌ素子製造方法 - Google Patents

有機ｅｌ素子、有機ｅｌ素子製造方法 Download PDF

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Publication number
WO2008117691A1
WO2008117691A1 PCT/JP2008/054877 JP2008054877W WO2008117691A1 WO 2008117691 A1 WO2008117691 A1 WO 2008117691A1 JP 2008054877 W JP2008054877 W JP 2008054877W WO 2008117691 A1 WO2008117691 A1 WO 2008117691A1
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WO
WIPO (PCT)
Prior art keywords
organic
charge injection
layers
light emitting
sputtering method
Prior art date
Application number
PCT/JP2008/054877
Other languages
English (en)
French (fr)
Inventor
Toshio Negishi
Original Assignee
Ulvac, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007078253A external-priority patent/JP5048369B2/ja
Priority claimed from JP2007105916A external-priority patent/JP4925903B2/ja
Application filed by Ulvac, Inc. filed Critical Ulvac, Inc.
Priority to EP08722272.5A priority Critical patent/EP2131410B1/en
Priority to KR1020097020087A priority patent/KR101167867B1/ko
Publication of WO2008117691A1 publication Critical patent/WO2008117691A1/ja
Priority to US12/567,068 priority patent/US8334647B2/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

　スパッタリング法により電荷注入層の表面に電極層を形成しても発光効率が低下しない有機ＥＬ素子を得る技術を提供する。 　本発明の有機ＥＬ素子４０、１６０は、第一の電荷注入層２３、１２６と、第一の有機層２４、１２４と、第二の電荷注入層２５、１２８を有している。第二の電荷注入層２５、１２８は、母材有機材料と電荷注入性金属材料とが混合された混合層として形成されている。この第二の電荷注入層２５の表面にスパッタリング法で電極層２６を形成しても、発光効率は低下しない。
PCT/JP2008/054877 2007-03-26 2008-03-17 有機ｅｌ素子、有機ｅｌ素子製造方法 WO2008117691A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08722272.5A EP2131410B1 (en) 2007-03-26 2008-03-17 Organic el element and organic el element manufacturing method
KR1020097020087A KR101167867B1 (ko) 2007-03-26 2008-03-17 유기 ｅｌ 소자, 유기 ｅｌ 소자 제조 방법
US12/567,068 US8334647B2 (en) 2007-03-26 2009-09-25 Organic EL device and an organic EL device producing method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-078253 2007-03-26
JP2007078253A JP5048369B2 (ja) 2007-03-26 2007-03-26 有機ｅｌ素子、有機ｅｌ素子製造方法
JP2007105916A JP4925903B2 (ja) 2007-04-13 2007-04-13 有機ｅｌ素子、有機ｅｌ素子製造方法
JP2007-105916 2007-04-13

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/567,068 Continuation US8334647B2 (en) 2007-03-26 2009-09-25 Organic EL device and an organic EL device producing method

Publications (1)

Publication Number Publication Date
WO2008117691A1 true WO2008117691A1 (ja) 2008-10-02

Family

ID=39788427

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/054877 WO2008117691A1 (ja) 2007-03-26 2008-03-17 有機ｅｌ素子、有機ｅｌ素子製造方法

Country Status (5)

Country Link
US (1) US8334647B2 (ja)
EP (1) EP2131410B1 (ja)
KR (1) KR101167867B1 (ja)
TW (1) TW200908791A (ja)
WO (1) WO2008117691A1 (ja)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000113976A (ja) * 1998-10-07 2000-04-21 Tdk Corp 有機ｅｌ素子
JP2004022176A (ja) * 2002-06-12 2004-01-22 Dainippon Printing Co Ltd エレクトロルミネッセント素子
JP2004079538A (ja) 2002-08-20 2004-03-11 Eastman Kodak Co 有機発光ダイオードカラー表示装置
JP2004164992A (ja) 2002-11-13 2004-06-10 Canon Inc 電子注入性電極の製造方法、及び有機エレクトロルミネッセンス素子の製造方法
JP2004319504A (ja) * 2003-04-16 2004-11-11 Eastman Kodak Co 有機発光デバイスの形成方法
JP2005026003A (ja) 2003-06-30 2005-01-27 Tdk Corp 有機ｅｌ素子の製造方法
JP2006210890A (ja) * 2004-12-27 2006-08-10 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2006302506A (ja) 2005-04-15 2006-11-02 Sony Corp 表示装置および表示装置の製造方法
JP2007073500A (ja) * 2005-08-11 2007-03-22 Semiconductor Energy Lab Co Ltd 発光素子、発光装置及び電子機器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4514841B2 (ja) * 1998-02-17 2010-07-28 淳二 城戸 有機エレクトロルミネッセント素子
JP3884564B2 (ja) * 1998-05-20 2007-02-21 出光興産株式会社 有機ｅｌ発光素子およびそれを用いた発光装置
JP4797361B2 (ja) * 2004-11-05 2011-10-19 富士電機株式会社 有機ｅｌ素子
US7563658B2 (en) 2004-12-27 2009-07-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101356093B1 (ko) * 2005-03-28 2014-01-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 안트라센 유도체, 발광소자용 재료, 발광소자, 발광장치 및전자기기
US7271537B2 (en) 2005-04-15 2007-09-18 Sony Corporation Display device and a method of manufacturing the display device
US8920940B2 (en) * 2005-05-20 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element and light-emitting device
TWI268736B (en) * 2005-08-10 2006-12-11 Au Optronics Corp Organic electroluminescent device (OELD) and display including the same

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000113976A (ja) * 1998-10-07 2000-04-21 Tdk Corp 有機ｅｌ素子
JP2004022176A (ja) * 2002-06-12 2004-01-22 Dainippon Printing Co Ltd エレクトロルミネッセント素子
JP2004079538A (ja) 2002-08-20 2004-03-11 Eastman Kodak Co 有機発光ダイオードカラー表示装置
JP2004164992A (ja) 2002-11-13 2004-06-10 Canon Inc 電子注入性電極の製造方法、及び有機エレクトロルミネッセンス素子の製造方法
JP2004319504A (ja) * 2003-04-16 2004-11-11 Eastman Kodak Co 有機発光デバイスの形成方法
JP2005026003A (ja) 2003-06-30 2005-01-27 Tdk Corp 有機ｅｌ素子の製造方法
JP2006210890A (ja) * 2004-12-27 2006-08-10 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2006302506A (ja) 2005-04-15 2006-11-02 Sony Corp 表示装置および表示装置の製造方法
JP2007073500A (ja) * 2005-08-11 2007-03-22 Semiconductor Energy Lab Co Ltd 発光素子、発光装置及び電子機器

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2131410A4

Also Published As

Publication number Publication date
US8334647B2 (en) 2012-12-18
US20100013387A1 (en) 2010-01-21
KR20090125144A (ko) 2009-12-03
KR101167867B1 (ko) 2012-07-23
EP2131410B1 (en) 2018-11-28
EP2131410A1 (en) 2009-12-09
TW200908791A (en) 2009-02-16
EP2131410A4 (en) 2011-03-23

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