WO2008117455A1 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
WO2008117455A1
WO2008117455A1 PCT/JP2007/056435 JP2007056435W WO2008117455A1 WO 2008117455 A1 WO2008117455 A1 WO 2008117455A1 JP 2007056435 W JP2007056435 W JP 2007056435W WO 2008117455 A1 WO2008117455 A1 WO 2008117455A1
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WO
WIPO (PCT)
Prior art keywords
producing
same
semiconductor device
resistive element
inαgexsbytezmβ
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/056435
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English (en)
French (fr)
Inventor
Motoyasu Terao
Takahiro Morikawa
Satoru Hanzawa
Norikatsu Takaura
Kenzo Kurotsuchi
Nozomu Matsuzaki
Yoshihisa Fujisaki
Masahiro Moniwa
Masaharu Kinoshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2009506168A priority Critical patent/JP5103470B2/ja
Priority to PCT/JP2007/056435 priority patent/WO2008117455A1/ja
Publication of WO2008117455A1 publication Critical patent/WO2008117455A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)

Abstract

　抵抗素子とＭＩＳトランジスタとによって構成された相変化メモリにおいて、抵抗素子の記憶層は、平均組成が下記の一般式（１） 　　　　　　　ＩｎαＧｅＸＳｂＹＴｅＺＭβ　　　　（１） （ここで、式中のα、Ｘ、Ｙ、Ｚおよびβは、それぞれ０．１≦α≦０．４、０．０４≦Ｘ≦０．３、０．０３≦Ｙ≦０．２、０．３≦Ｚ≦０．６、０．０１≦β≦０．０５であり、Ｍは、Ｖ、Ｎｂ、Ｔａ、Ｃｒ、Ｍｏ、Ｗ、Ｔｉ、Ｔａ、Ｍｏ、Ｐｂ、Ｓｉ、Ｆｅ、Ｃｏ、Ｎｉ、Ｅｕ、Ｐｄからなる群より選ばれた少なくとも１種類の元素である）で表されるカルコゲナイド膜からなる。
PCT/JP2007/056435 2007-03-27 2007-03-27 半導体装置およびその製造方法 Ceased WO2008117455A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009506168A JP5103470B2 (ja) 2007-03-27 2007-03-27 半導体装置およびその製造方法
PCT/JP2007/056435 WO2008117455A1 (ja) 2007-03-27 2007-03-27 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/056435 WO2008117455A1 (ja) 2007-03-27 2007-03-27 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
WO2008117455A1 true WO2008117455A1 (ja) 2008-10-02

Family

ID=39788198

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/056435 Ceased WO2008117455A1 (ja) 2007-03-27 2007-03-27 半導体装置およびその製造方法

Country Status (2)

Country Link
JP (1) JP5103470B2 (ja)
WO (1) WO2008117455A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103367633A (zh) * 2012-03-27 2013-10-23 中国科学院上海微系统与信息技术研究所 一种用于相变存储器的钨掺杂改性的相变材料及其应用
US9123416B2 (en) 2011-09-09 2015-09-01 Commissariat A L'energie Atomique Et Aux Energies Alternatives Non-volatile phase-change resistive memory
KR20160076578A (ko) * 2014-12-23 2016-07-01 삼성전자주식회사 저항변화 물질막, 이를 포함하는 저항변화 메모리 장치
CN112133824A (zh) * 2020-09-02 2020-12-25 中国科学院上海微系统与信息技术研究所 一种相变材料、相变存储单元及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005117030A (ja) * 2003-09-17 2005-04-28 Mitsubishi Materials Corp 半導体不揮発メモリー用相変化膜およびこの相変化膜を形成するためのスパッタリングターゲット
JP2006140395A (ja) * 2004-11-15 2006-06-01 Renesas Technology Corp 半導体メモリおよびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005117030A (ja) * 2003-09-17 2005-04-28 Mitsubishi Materials Corp 半導体不揮発メモリー用相変化膜およびこの相変化膜を形成するためのスパッタリングターゲット
JP2006140395A (ja) * 2004-11-15 2006-06-01 Renesas Technology Corp 半導体メモリおよびその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9123416B2 (en) 2011-09-09 2015-09-01 Commissariat A L'energie Atomique Et Aux Energies Alternatives Non-volatile phase-change resistive memory
CN103367633A (zh) * 2012-03-27 2013-10-23 中国科学院上海微系统与信息技术研究所 一种用于相变存储器的钨掺杂改性的相变材料及其应用
KR20160076578A (ko) * 2014-12-23 2016-07-01 삼성전자주식회사 저항변화 물질막, 이를 포함하는 저항변화 메모리 장치
KR102304301B1 (ko) 2014-12-23 2021-09-23 삼성전자주식회사 저항변화 물질막, 이를 포함하는 저항변화 메모리 장치
CN112133824A (zh) * 2020-09-02 2020-12-25 中国科学院上海微系统与信息技术研究所 一种相变材料、相变存储单元及其制备方法

Also Published As

Publication number Publication date
JPWO2008117455A1 (ja) 2010-07-08
JP5103470B2 (ja) 2012-12-19

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