WO2008111184A1 - 半導体製造装置とそのクリーニング方法、及びクリーニング用ウエハ - Google Patents

半導体製造装置とそのクリーニング方法、及びクリーニング用ウエハ Download PDF

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Publication number
WO2008111184A1
WO2008111184A1 PCT/JP2007/055033 JP2007055033W WO2008111184A1 WO 2008111184 A1 WO2008111184 A1 WO 2008111184A1 JP 2007055033 W JP2007055033 W JP 2007055033W WO 2008111184 A1 WO2008111184 A1 WO 2008111184A1
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WO
WIPO (PCT)
Prior art keywords
cleaning
wafer
semiconductor manufacturing
manufacturing apparatus
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/055033
Other languages
English (en)
French (fr)
Inventor
Osamu Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Priority to PCT/JP2007/055033 priority Critical patent/WO2008111184A1/ja
Publication of WO2008111184A1 publication Critical patent/WO2008111184A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

【課題】効率よく半導体製造装置をクリーニングすることが可能な半導体製造装置とそのクリーニング方法、及びクリーニング用ウエハを提供すること。 【解決手段】トランスファチャンバ２と、トランスファチャンバ２に接続された処理チャンバ５と、トランスファチャンバ２に接続され、クリーニング用ウエハCWを帯電又は除電する補助チャンバ４と、トランスファチャンバ２、処理チャンバ５、及び補助チャンバ４にクリーニング用ウエハCWを搬送する搬送ロボット６とを有する半導体製造装置１による。
PCT/JP2007/055033 2007-03-14 2007-03-14 半導体製造装置とそのクリーニング方法、及びクリーニング用ウエハ Ceased WO2008111184A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/055033 WO2008111184A1 (ja) 2007-03-14 2007-03-14 半導体製造装置とそのクリーニング方法、及びクリーニング用ウエハ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/055033 WO2008111184A1 (ja) 2007-03-14 2007-03-14 半導体製造装置とそのクリーニング方法、及びクリーニング用ウエハ

Publications (1)

Publication Number Publication Date
WO2008111184A1 true WO2008111184A1 (ja) 2008-09-18

Family

ID=39759135

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/055033 Ceased WO2008111184A1 (ja) 2007-03-14 2007-03-14 半導体製造装置とそのクリーニング方法、及びクリーニング用ウエハ

Country Status (1)

Country Link
WO (1) WO2008111184A1 (ja)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0178021U (ja) * 1987-11-16 1989-05-25
JPH06252066A (ja) * 1993-02-23 1994-09-09 Toshiba Corp 半導体製造装置と半導体装置の製造方法
JPH08203851A (ja) * 1995-01-27 1996-08-09 Sony Corp 清浄化装置
JP2000021947A (ja) * 1998-06-30 2000-01-21 Sony Corp 乾式処理装置
JP2000138275A (ja) * 1998-10-29 2000-05-16 Seiko Epson Corp 半導体製造装置
JP2000260671A (ja) * 1999-03-12 2000-09-22 Toshiba Corp ダスト吸着用ウエハ及び半導体装置内のクリーニング方法
JP2003051523A (ja) * 2001-08-07 2003-02-21 Sharp Corp パーティクル除去システム
JP2004063669A (ja) * 2002-07-26 2004-02-26 Oki Electric Ind Co Ltd 半導体製造装置クリーニングウエハとその製造方法、およびそれを用いたクリーニング方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0178021U (ja) * 1987-11-16 1989-05-25
JPH06252066A (ja) * 1993-02-23 1994-09-09 Toshiba Corp 半導体製造装置と半導体装置の製造方法
JPH08203851A (ja) * 1995-01-27 1996-08-09 Sony Corp 清浄化装置
JP2000021947A (ja) * 1998-06-30 2000-01-21 Sony Corp 乾式処理装置
JP2000138275A (ja) * 1998-10-29 2000-05-16 Seiko Epson Corp 半導体製造装置
JP2000260671A (ja) * 1999-03-12 2000-09-22 Toshiba Corp ダスト吸着用ウエハ及び半導体装置内のクリーニング方法
JP2003051523A (ja) * 2001-08-07 2003-02-21 Sharp Corp パーティクル除去システム
JP2004063669A (ja) * 2002-07-26 2004-02-26 Oki Electric Ind Co Ltd 半導体製造装置クリーニングウエハとその製造方法、およびそれを用いたクリーニング方法

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