WO2008108369A1 - 半導体装置の製造方法および記録媒体 - Google Patents

半導体装置の製造方法および記録媒体 Download PDF

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Publication number
WO2008108369A1
WO2008108369A1 PCT/JP2008/053858 JP2008053858W WO2008108369A1 WO 2008108369 A1 WO2008108369 A1 WO 2008108369A1 JP 2008053858 W JP2008053858 W JP 2008053858W WO 2008108369 A1 WO2008108369 A1 WO 2008108369A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
recording medium
manufacturing semiconductor
fluoride
manufacturing
Prior art date
Application number
PCT/JP2008/053858
Other languages
English (en)
French (fr)
Inventor
Hidenori Miyoshi
Eiichi Nishimura
Kazuhiro Kubota
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to KR1020097018799A priority Critical patent/KR101132487B1/ko
Publication of WO2008108369A1 publication Critical patent/WO2008108369A1/ja
Priority to US12/555,283 priority patent/US20100029086A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors

Abstract

　半導体装置を構成する金属に残留するフッ素を低減して、信頼性の高い半導体装置を提供する。被処理基板に形成される半導体装置の電極あるいは配線を形成している金属に生成した金属フッ化物を除去する処理を行うフッ化物除去工程を有する半導体装置の製造方法であって、前記フッ化物除去工程では、前記被処理基板に気体状態の蟻酸を供給し、前記金属フッ化物を除去することを特徴とする半導体装置の製造方法。
PCT/JP2008/053858 2007-03-08 2008-03-04 半導体装置の製造方法および記録媒体 WO2008108369A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020097018799A KR101132487B1 (ko) 2007-03-08 2008-03-04 반도체 장치의 제조 방법 및 기록 매체
US12/555,283 US20100029086A1 (en) 2007-03-08 2009-09-08 Method for manufacturing semiconductor device and storage medium

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-059112 2007-03-08
JP2007059112A JP2008226924A (ja) 2007-03-08 2007-03-08 半導体装置の製造方法および記録媒体

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/555,283 Continuation US20100029086A1 (en) 2007-03-08 2009-09-08 Method for manufacturing semiconductor device and storage medium

Publications (1)

Publication Number Publication Date
WO2008108369A1 true WO2008108369A1 (ja) 2008-09-12

Family

ID=39738247

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/053858 WO2008108369A1 (ja) 2007-03-08 2008-03-04 半導体装置の製造方法および記録媒体

Country Status (6)

Country Link
US (1) US20100029086A1 (ja)
JP (1) JP2008226924A (ja)
KR (1) KR101132487B1 (ja)
CN (1) CN101627469A (ja)
TW (1) TWI539523B (ja)
WO (1) WO2008108369A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011161797A1 (ja) * 2010-06-24 2011-12-29 富士通株式会社 配線構造の形成方法、半導体装置の製造方法、基板処理装置
KR101933991B1 (ko) * 2012-08-23 2019-03-25 해성디에스 주식회사 회로기판의 제조방법
US20150340611A1 (en) * 2014-05-21 2015-11-26 Sony Corporation Method for a dry exhumation without oxidation of a cell and source line

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH056880A (ja) * 1991-06-27 1993-01-14 Toshiba Corp 表面処理方法
JP2003224185A (ja) * 2002-01-28 2003-08-08 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP2004095728A (ja) * 2002-08-30 2004-03-25 Fujitsu Ltd 半導体装置の製造方法
JP2006310603A (ja) * 2005-04-28 2006-11-09 Nissan Chem Ind Ltd ホウ素化合物を含む半導体用洗浄液組成物及び洗浄方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5736002A (en) * 1994-08-22 1998-04-07 Sharp Microelectronics Technology, Inc. Methods and equipment for anisotropic, patterned conversion of copper into selectively removable compounds and for removal of same
JP3734447B2 (ja) * 2002-01-18 2006-01-11 富士通株式会社 半導体装置の製造方法および半導体装置の製造装置
US7776754B2 (en) * 2005-10-11 2010-08-17 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method and chemical fluid used for manufacturing semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH056880A (ja) * 1991-06-27 1993-01-14 Toshiba Corp 表面処理方法
JP2003224185A (ja) * 2002-01-28 2003-08-08 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP2004095728A (ja) * 2002-08-30 2004-03-25 Fujitsu Ltd 半導体装置の製造方法
JP2006310603A (ja) * 2005-04-28 2006-11-09 Nissan Chem Ind Ltd ホウ素化合物を含む半導体用洗浄液組成物及び洗浄方法

Also Published As

Publication number Publication date
CN101627469A (zh) 2010-01-13
TW200901322A (en) 2009-01-01
KR101132487B1 (ko) 2012-03-30
KR20090109578A (ko) 2009-10-20
US20100029086A1 (en) 2010-02-04
JP2008226924A (ja) 2008-09-25
TWI539523B (zh) 2016-06-21

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