WO2008105321A1 - アモルファスカーボン膜の形成方法、アモルファスカーボン膜、多層レジスト膜、半導体装置の製造方法およびコンピュータ可読記憶媒体 - Google Patents
アモルファスカーボン膜の形成方法、アモルファスカーボン膜、多層レジスト膜、半導体装置の製造方法およびコンピュータ可読記憶媒体 Download PDFInfo
- Publication number
- WO2008105321A1 WO2008105321A1 PCT/JP2008/052990 JP2008052990W WO2008105321A1 WO 2008105321 A1 WO2008105321 A1 WO 2008105321A1 JP 2008052990 W JP2008052990 W JP 2008052990W WO 2008105321 A1 WO2008105321 A1 WO 2008105321A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- amorphous carbon
- carbon film
- film
- forming
- computer
- Prior art date
Links
- 229910003481 amorphous carbon Inorganic materials 0.000 title abstract 6
- 238000000034 method Methods 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 abstract 2
- 229910002091 carbon monoxide Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02527—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02592—Microstructure amorphous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Carbon And Carbon Compounds (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200880006410XA CN101622693B (zh) | 2007-02-28 | 2008-02-21 | 无定形碳膜的形成方法和半导体装置的制造方法 |
US12/528,847 US8409460B2 (en) | 2007-02-28 | 2008-02-21 | Forming method of amorphous carbon film, amorphous carbon film, multilayer resist film, manufacturing method of semiconductor device, and computer-readable storage medium |
KR1020097019776A KR101102422B1 (ko) | 2007-02-28 | 2008-02-21 | 비결정 탄소막의 형성 방법, 비결정 탄소막, 다층 레지스트막, 반도체 장치의 제조 방법 및 컴퓨터 가독 기억 매체 |
JP2009501210A JP5113830B2 (ja) | 2007-02-28 | 2008-02-21 | アモルファスカーボン膜の形成方法、半導体装置の製造方法およびコンピュータ可読記憶媒体 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007049185 | 2007-02-28 | ||
JP2007-049185 | 2007-02-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008105321A1 true WO2008105321A1 (ja) | 2008-09-04 |
Family
ID=39721156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/052990 WO2008105321A1 (ja) | 2007-02-28 | 2008-02-21 | アモルファスカーボン膜の形成方法、アモルファスカーボン膜、多層レジスト膜、半導体装置の製造方法およびコンピュータ可読記憶媒体 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8409460B2 (ja) |
JP (2) | JP5113830B2 (ja) |
KR (1) | KR101102422B1 (ja) |
CN (1) | CN101622693B (ja) |
TW (1) | TWI413187B (ja) |
WO (1) | WO2008105321A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7604834B2 (en) * | 2004-04-28 | 2009-10-20 | Intel Corporation | Formation of dielectric film by alternating between deposition and modification |
US20110201206A1 (en) * | 2008-08-28 | 2011-08-18 | Tokyo Electron Limited | Method for forming amorphous carbon nitride film, amorphous carbon nitride film, multilayer resist film, method for manufacturing semiconductor device, and storage medium in which control program is stored |
JP2012212706A (ja) * | 2011-03-30 | 2012-11-01 | Tohoku Univ | 半導体装置及びその製法において用いられるアモルファスカーボン膜の製造法 |
US9378944B2 (en) | 2012-07-09 | 2016-06-28 | Tokyo Electron Limited | Method and apparatus of forming carbon film |
KR20160104553A (ko) | 2015-02-26 | 2016-09-05 | 도쿄엘렉트론가부시키가이샤 | 카본 막의 성막 방법 및 성막 장치 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010177262A (ja) * | 2009-01-27 | 2010-08-12 | Panasonic Corp | 半導体装置の製造方法 |
US20100258526A1 (en) * | 2009-04-08 | 2010-10-14 | Jaihyung Won | Methods of forming an amorphous carbon layer and methods of forming a pattern using the same |
US8877641B2 (en) * | 2009-12-28 | 2014-11-04 | Spansion Llc | Line-edge roughness improvement for small pitches |
US8399366B1 (en) * | 2011-08-25 | 2013-03-19 | Tokyo Electron Limited | Method of depositing highly conformal amorphous carbon films over raised features |
US9318412B2 (en) * | 2013-07-26 | 2016-04-19 | Nanya Technology Corporation | Method for semiconductor self-aligned patterning |
US9455337B2 (en) * | 2014-06-18 | 2016-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP2017168411A (ja) * | 2016-03-18 | 2017-09-21 | 株式会社ジャパンディスプレイ | 表示装置の製造方法 |
WO2020031224A1 (ja) * | 2018-08-06 | 2020-02-13 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法およびプラズマアッシング装置 |
WO2020262039A1 (ja) * | 2019-06-26 | 2020-12-30 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理システム |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6110241A (ja) * | 1984-06-26 | 1986-01-17 | Toshiba Corp | 半導体装置の製造方法 |
JPH06267897A (ja) * | 1993-03-10 | 1994-09-22 | Toshiba Corp | 半導体製造装置及び方法 |
WO2005074449A2 (en) * | 2004-01-30 | 2005-08-18 | Tokyo Electron Limited | Structure comprising amorphous carbon film and method of forming thereof |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3384490B2 (ja) | 1990-06-04 | 2003-03-10 | ティーディーケイ株式会社 | 高周波プラズマcvd法による炭素膜の形成法 |
JPH1167727A (ja) * | 1997-08-19 | 1999-03-09 | Hitachi Ltd | プラズマ処理装置及びその方法 |
JP5121090B2 (ja) | 2000-02-17 | 2013-01-16 | アプライド マテリアルズ インコーポレイテッド | アモルファスカーボン層の堆積方法 |
US6486082B1 (en) * | 2001-06-18 | 2002-11-26 | Applied Materials, Inc. | CVD plasma assisted lower dielectric constant sicoh film |
JP3921528B2 (ja) * | 2002-09-06 | 2007-05-30 | 独立行政法人物質・材料研究機構 | リソグラフィ用基板被覆構造体 |
JP3931229B2 (ja) * | 2002-09-13 | 2007-06-13 | 独立行政法人物質・材料研究機構 | 酸化炭素薄膜および酸化窒化炭素薄膜とこれら酸化炭素系薄膜の製造方法 |
JP2004266008A (ja) | 2003-02-28 | 2004-09-24 | Toshiba Corp | 半導体装置の製造方法 |
CN100456462C (zh) * | 2003-10-09 | 2009-01-28 | 飞思卡尔半导体公司 | 具有增强光刻胶黏性的无定形碳层的器件及其制造方法 |
JP4012516B2 (ja) | 2004-03-30 | 2007-11-21 | 浩史 滝川 | カーボンナノバルーン構造体の製造方法 |
-
2008
- 2008-02-21 KR KR1020097019776A patent/KR101102422B1/ko active IP Right Grant
- 2008-02-21 WO PCT/JP2008/052990 patent/WO2008105321A1/ja active Application Filing
- 2008-02-21 JP JP2009501210A patent/JP5113830B2/ja active Active
- 2008-02-21 US US12/528,847 patent/US8409460B2/en active Active
- 2008-02-21 CN CN200880006410XA patent/CN101622693B/zh not_active Expired - Fee Related
- 2008-02-25 TW TW097106479A patent/TWI413187B/zh not_active IP Right Cessation
-
2012
- 2012-10-10 JP JP2012225119A patent/JP2013030801A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6110241A (ja) * | 1984-06-26 | 1986-01-17 | Toshiba Corp | 半導体装置の製造方法 |
JPH06267897A (ja) * | 1993-03-10 | 1994-09-22 | Toshiba Corp | 半導体製造装置及び方法 |
WO2005074449A2 (en) * | 2004-01-30 | 2005-08-18 | Tokyo Electron Limited | Structure comprising amorphous carbon film and method of forming thereof |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7604834B2 (en) * | 2004-04-28 | 2009-10-20 | Intel Corporation | Formation of dielectric film by alternating between deposition and modification |
US20110201206A1 (en) * | 2008-08-28 | 2011-08-18 | Tokyo Electron Limited | Method for forming amorphous carbon nitride film, amorphous carbon nitride film, multilayer resist film, method for manufacturing semiconductor device, and storage medium in which control program is stored |
JP2012212706A (ja) * | 2011-03-30 | 2012-11-01 | Tohoku Univ | 半導体装置及びその製法において用いられるアモルファスカーボン膜の製造法 |
US9378944B2 (en) | 2012-07-09 | 2016-06-28 | Tokyo Electron Limited | Method and apparatus of forming carbon film |
KR20160104553A (ko) | 2015-02-26 | 2016-09-05 | 도쿄엘렉트론가부시키가이샤 | 카본 막의 성막 방법 및 성막 장치 |
Also Published As
Publication number | Publication date |
---|---|
KR20090122259A (ko) | 2009-11-26 |
JP5113830B2 (ja) | 2013-01-09 |
US8409460B2 (en) | 2013-04-02 |
TWI413187B (zh) | 2013-10-21 |
TW200847283A (en) | 2008-12-01 |
CN101622693B (zh) | 2012-07-04 |
JPWO2008105321A1 (ja) | 2010-06-03 |
CN101622693A (zh) | 2010-01-06 |
US20100105213A1 (en) | 2010-04-29 |
KR101102422B1 (ko) | 2012-01-05 |
JP2013030801A (ja) | 2013-02-07 |
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