WO2008099621A1 - レジスト下層膜形成用組成物、及びこれを用いたレジスト下層膜 - Google Patents

レジスト下層膜形成用組成物、及びこれを用いたレジスト下層膜 Download PDF

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Publication number
WO2008099621A1
WO2008099621A1 PCT/JP2008/050077 JP2008050077W WO2008099621A1 WO 2008099621 A1 WO2008099621 A1 WO 2008099621A1 JP 2008050077 W JP2008050077 W JP 2008050077W WO 2008099621 A1 WO2008099621 A1 WO 2008099621A1
Authority
WO
WIPO (PCT)
Prior art keywords
under
resist film
composition
resist
film formation
Prior art date
Application number
PCT/JP2008/050077
Other languages
English (en)
French (fr)
Inventor
Naoki Yamashita
Daisuke Kawana
Hisanobu Harada
Original Assignee
Tokyo Ohka Kogyo Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co., Ltd. filed Critical Tokyo Ohka Kogyo Co., Ltd.
Publication of WO2008099621A1 publication Critical patent/WO2008099621A1/ja

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)

Abstract

　反射防止膜としての機能を有するとともに、レジスト層との密着性が良好なレジスト下層膜を形成できるレジスト下層膜形成用組成物、及びこれを用いて形成されたレジスト下層膜を提供する。 　特定の繰り返し単位を有するシロキサンポリマーＡとシロキサンポリマーＢとを含有するレジスト下層膜形成用組成物によれば、反射防止膜としての機能を有するとともに、レジスト層との密着性が良好なレジスト下層膜を形成できる。
PCT/JP2008/050077 2007-02-16 2008-01-08 レジスト下層膜形成用組成物、及びこれを用いたレジスト下層膜 WO2008099621A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-037158 2007-02-16
JP2007037158A JP5101904B2 (ja) 2007-02-16 2007-02-16 レジスト下層膜形成用組成物、及びこれを用いたレジスト下層膜

Publications (1)

Publication Number Publication Date
WO2008099621A1 true WO2008099621A1 (ja) 2008-08-21

Family

ID=39689867

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050077 WO2008099621A1 (ja) 2007-02-16 2008-01-08 レジスト下層膜形成用組成物、及びこれを用いたレジスト下層膜

Country Status (2)

Country Link
JP (1) JP5101904B2 (ja)
WO (1) WO2008099621A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5015892B2 (ja) * 2008-10-02 2012-08-29 信越化学工業株式会社 ケイ素含有膜形成用組成物、ケイ素含有膜形成基板及びパターン形成方法
JP5015891B2 (ja) * 2008-10-02 2012-08-29 信越化学工業株式会社 金属酸化物含有膜形成用組成物、金属酸化物含有膜形成基板及びパターン形成方法
JP5038354B2 (ja) * 2009-05-11 2012-10-03 信越化学工業株式会社 ケイ素含有反射防止膜形成用組成物、ケイ素含有反射防止膜形成基板及びパターン形成方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005352107A (ja) * 2004-06-10 2005-12-22 Shin Etsu Chem Co Ltd 犠牲膜形成用組成物、パターン形成方法、犠牲膜及びその除去方法
JP2005352110A (ja) * 2004-06-10 2005-12-22 Shin Etsu Chem Co Ltd 犠牲膜形成用組成物、パターン形成方法、犠牲膜及びその除去方法
JP2005352104A (ja) * 2004-06-10 2005-12-22 Shin Etsu Chem Co Ltd 反射防止膜材料、及びこれの製造方法、これを用いた反射防止膜、パターン形成
JP2006317864A (ja) * 2005-05-16 2006-11-24 Tokyo Ohka Kogyo Co Ltd 反射防止膜形成用組成物、および配線形成方法
JP2007226170A (ja) * 2006-01-27 2007-09-06 Shin Etsu Chem Co Ltd 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005352107A (ja) * 2004-06-10 2005-12-22 Shin Etsu Chem Co Ltd 犠牲膜形成用組成物、パターン形成方法、犠牲膜及びその除去方法
JP2005352110A (ja) * 2004-06-10 2005-12-22 Shin Etsu Chem Co Ltd 犠牲膜形成用組成物、パターン形成方法、犠牲膜及びその除去方法
JP2005352104A (ja) * 2004-06-10 2005-12-22 Shin Etsu Chem Co Ltd 反射防止膜材料、及びこれの製造方法、これを用いた反射防止膜、パターン形成
JP2006317864A (ja) * 2005-05-16 2006-11-24 Tokyo Ohka Kogyo Co Ltd 反射防止膜形成用組成物、および配線形成方法
JP2007226170A (ja) * 2006-01-27 2007-09-06 Shin Etsu Chem Co Ltd 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法

Also Published As

Publication number Publication date
JP2008203365A (ja) 2008-09-04
JP5101904B2 (ja) 2012-12-19

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