WO2008099621A1 - レジスト下層膜形成用組成物、及びこれを用いたレジスト下層膜 - Google Patents

レジスト下層膜形成用組成物、及びこれを用いたレジスト下層膜 Download PDF

Info

Publication number
WO2008099621A1
WO2008099621A1 PCT/JP2008/050077 JP2008050077W WO2008099621A1 WO 2008099621 A1 WO2008099621 A1 WO 2008099621A1 JP 2008050077 W JP2008050077 W JP 2008050077W WO 2008099621 A1 WO2008099621 A1 WO 2008099621A1
Authority
WO
WIPO (PCT)
Prior art keywords
under
resist film
composition
resist
film formation
Prior art date
Application number
PCT/JP2008/050077
Other languages
English (en)
French (fr)
Inventor
Naoki Yamashita
Daisuke Kawana
Hisanobu Harada
Original Assignee
Tokyo Ohka Kogyo Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co., Ltd. filed Critical Tokyo Ohka Kogyo Co., Ltd.
Publication of WO2008099621A1 publication Critical patent/WO2008099621A1/ja

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)

Abstract

　反射防止膜としての機能を有するとともに、レジスト層との密着性が良好なレジスト下層膜を形成できるレジスト下層膜形成用組成物、及びこれを用いて形成されたレジスト下層膜を提供する。 　特定の繰り返し単位を有するシロキサンポリマーＡとシロキサンポリマーＢとを含有するレジスト下層膜形成用組成物によれば、反射防止膜としての機能を有するとともに、レジスト層との密着性が良好なレジスト下層膜を形成できる。
PCT/JP2008/050077 2007-02-16 2008-01-08 レジスト下層膜形成用組成物、及びこれを用いたレジスト下層膜 WO2008099621A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-037158 2007-02-16
JP2007037158A JP5101904B2 (ja) 2007-02-16 2007-02-16 レジスト下層膜形成用組成物、及びこれを用いたレジスト下層膜

Publications (1)

Publication Number Publication Date
WO2008099621A1 true WO2008099621A1 (ja) 2008-08-21

Family

ID=39689867

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050077 WO2008099621A1 (ja) 2007-02-16 2008-01-08 レジスト下層膜形成用組成物、及びこれを用いたレジスト下層膜

Country Status (2)

Country Link
JP (1) JP5101904B2 (ja)
WO (1) WO2008099621A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5015891B2 (ja) * 2008-10-02 2012-08-29 信越化学工業株式会社 金属酸化物含有膜形成用組成物、金属酸化物含有膜形成基板及びパターン形成方法
JP5015892B2 (ja) * 2008-10-02 2012-08-29 信越化学工業株式会社 ケイ素含有膜形成用組成物、ケイ素含有膜形成基板及びパターン形成方法
JP5038354B2 (ja) * 2009-05-11 2012-10-03 信越化学工業株式会社 ケイ素含有反射防止膜形成用組成物、ケイ素含有反射防止膜形成基板及びパターン形成方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005352107A (ja) * 2004-06-10 2005-12-22 Shin Etsu Chem Co Ltd 犠牲膜形成用組成物、パターン形成方法、犠牲膜及びその除去方法
JP2005352104A (ja) * 2004-06-10 2005-12-22 Shin Etsu Chem Co Ltd 反射防止膜材料、及びこれの製造方法、これを用いた反射防止膜、パターン形成
JP2005352110A (ja) * 2004-06-10 2005-12-22 Shin Etsu Chem Co Ltd 犠牲膜形成用組成物、パターン形成方法、犠牲膜及びその除去方法
JP2006317864A (ja) * 2005-05-16 2006-11-24 Tokyo Ohka Kogyo Co Ltd 反射防止膜形成用組成物、および配線形成方法
JP2007226170A (ja) * 2006-01-27 2007-09-06 Shin Etsu Chem Co Ltd 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005352107A (ja) * 2004-06-10 2005-12-22 Shin Etsu Chem Co Ltd 犠牲膜形成用組成物、パターン形成方法、犠牲膜及びその除去方法
JP2005352104A (ja) * 2004-06-10 2005-12-22 Shin Etsu Chem Co Ltd 反射防止膜材料、及びこれの製造方法、これを用いた反射防止膜、パターン形成
JP2005352110A (ja) * 2004-06-10 2005-12-22 Shin Etsu Chem Co Ltd 犠牲膜形成用組成物、パターン形成方法、犠牲膜及びその除去方法
JP2006317864A (ja) * 2005-05-16 2006-11-24 Tokyo Ohka Kogyo Co Ltd 反射防止膜形成用組成物、および配線形成方法
JP2007226170A (ja) * 2006-01-27 2007-09-06 Shin Etsu Chem Co Ltd 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法

Also Published As

Publication number Publication date
JP5101904B2 (ja) 2012-12-19
JP2008203365A (ja) 2008-09-04

Similar Documents

Publication Publication Date Title
WO2008143302A1 (ja) レジスト下層膜形成用組成物
EP2366751A3 (en) Photosensitive adhesive composition, and film adhesive, adhesive sheet, adhesive pattern, semiconductor wafer with adhesive layer and semiconductor device using the photosensitive adhesive composition
ATE515529T1 (de) Folie aus verstärktem silikonharz und nanofasergefüllte silikonzusammensetzung
WO2008045500A3 (en) Laminate fire retardant systems and uses
WO2009120548A3 (en) Multilayer articles and methods of making and using the same
EP2196854A4 (en) COMPOSITION CONTAINING A POLYMER HAVING A NITROGENIC SYLINE GROUP FOR FORMING RESIST UNDER-LAYER FILM
WO2007140391A3 (en) Methods of making decomposable thin films of polyelectrolytes and uses thereof
WO2009158036A3 (en) Protective film with release surface
WO2007103775A3 (en) Biomaterials having nanoscale layers and coatings
EP2336256A4 (en) COMPOSITION FOR FORMING SILICON-CONTAINING RESERVE SUB-LAYER FILM WITH ONIUM GROUP
WO2008096616A1 (ja) 透明ガスバリア性フィルム及びその製造方法
WO2013003428A3 (en) Structure integrated by vacuum pressure forming or vacuum forming, and manufacturing method thereof
TW200730583A (en) Siloxane resin composition and the method for manufacturing the same
WO2009126592A3 (en) Fuel system components
WO2007136761A3 (en) Polymeric laminates including nanoclay
DE602007000572D1 (de) Laminatfilm mit Gasbarriereneigenschaften
WO2008076339A3 (en) Multilayer films
PL2099876T3 (pl) Kompozycje powłokowe charakteryzujące się bardzo wysoką siłą przyczepności do błon z polimerów cykloolefin oraz błony z polimerów cykloolefin zawierające warstwę powłokową wytworzoną przy ich użyciu
WO2009099965A3 (en) Multi-layer article
WO2010029369A3 (en) Multi-layer adhesive interfaces
EP2221322A4 (en) IONOMER, IONOMER-CONTAINING RESIN COMPOSITION, NON-STRETCHED FILM, EACH SHEET OR MOLDED BODY BASED ON THE SAME, AND LAMINATE COMPRISING A UNSOLVED FILM LAYER
JP2011507736A5 (ja)
WO2009085390A3 (en) Tapes comprising barrier coating compositions and components comprising the same
WO2013012252A3 (ko) 우수한 내지문성을 갖는 눈부심 방지 코팅 조성물, 이를 이용하여 제조된 눈부심 방지 필름
WO2009145565A3 (ko) 보호필름

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08702957

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08702957

Country of ref document: EP

Kind code of ref document: A1