WO2008096656A1 - Polymère contenant du silicium, son procédé de synthèse, composition de formation de film, film de silice et procédé de formation du film de silice - Google Patents

Polymère contenant du silicium, son procédé de synthèse, composition de formation de film, film de silice et procédé de formation du film de silice Download PDF

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Publication number
WO2008096656A1
WO2008096656A1 PCT/JP2008/051492 JP2008051492W WO2008096656A1 WO 2008096656 A1 WO2008096656 A1 WO 2008096656A1 JP 2008051492 W JP2008051492 W JP 2008051492W WO 2008096656 A1 WO2008096656 A1 WO 2008096656A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
forming
silica film
synthesizing
silicon
Prior art date
Application number
PCT/JP2008/051492
Other languages
English (en)
Japanese (ja)
Inventor
Hisashi Nakagawa
Seitarou Hattori
Naohisa Tokushige
Youhei Nobe
Masahiro Akiyama
Original Assignee
Jsr Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corporation filed Critical Jsr Corporation
Priority to JP2008557078A priority Critical patent/JPWO2008096656A1/ja
Publication of WO2008096656A1 publication Critical patent/WO2008096656A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C09D183/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Silicon Polymers (AREA)
  • Paints Or Removers (AREA)
  • Polyethers (AREA)

Abstract

L'invention porte sur un procédé pour synthétiser un polymère contenant du silicium, qui comprend une étape d'addition d'un premier liquide contenant au moins un composé silane hydrolysable choisi parmi les monomères silanes hydrolysables (A) et les polycarbosilanes hydrolysables (B) à un second liquide contenant de l'eau et un catalyseur, permettant ainsi de provoquer une condensation par hydrolyse du composé silane hydrolysable.
PCT/JP2008/051492 2007-02-07 2008-01-31 Polymère contenant du silicium, son procédé de synthèse, composition de formation de film, film de silice et procédé de formation du film de silice WO2008096656A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008557078A JPWO2008096656A1 (ja) 2007-02-07 2008-01-31 ケイ素含有ポリマーおよびその合成方法、膜形成用組成物、ならびにシリカ系膜およびその形成方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-027978 2007-02-07
JP2007027978 2007-02-07

Publications (1)

Publication Number Publication Date
WO2008096656A1 true WO2008096656A1 (fr) 2008-08-14

Family

ID=39681567

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/051492 WO2008096656A1 (fr) 2007-02-07 2008-01-31 Polymère contenant du silicium, son procédé de synthèse, composition de formation de film, film de silice et procédé de formation du film de silice

Country Status (3)

Country Link
JP (1) JPWO2008096656A1 (fr)
TW (1) TW200848451A (fr)
WO (1) WO2008096656A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010090248A (ja) * 2008-10-07 2010-04-22 Jsr Corp 多層レジストプロセス用シリコン含有膜形成用組成物及びシリコン含有膜並びにパターン形成方法
JP2010106099A (ja) * 2008-10-29 2010-05-13 Jsr Corp 絶縁膜形成用組成物、ならびに絶縁膜およびその形成方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10150033A (ja) * 1996-11-19 1998-06-02 Matsushita Electric Ind Co Ltd 層間絶縁膜形成用材料及び層間絶縁膜
JP2004269692A (ja) * 2003-03-10 2004-09-30 Shin Etsu Chem Co Ltd 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜、及び半導体装置
JP2004292643A (ja) * 2003-03-27 2004-10-21 Shin Etsu Chem Co Ltd 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜、及び半導体装置
JP2005076031A (ja) * 2003-09-01 2005-03-24 Samsung Electronics Co Ltd 新規のシロキサン樹脂及びこれを用いた半導体層間絶縁膜
WO2005068538A1 (fr) * 2004-01-16 2005-07-28 Jsr Corporation Procede pour produire un polymere, polymere, composition pour former un film isolant, procede pour produire un film isolant, et film isolant
WO2005108516A1 (fr) * 2004-05-11 2005-11-17 Jsr Corporation Composition pour former un film isolant, procédé de production de ladite composition, film isolant de silice et procédé d'élaboration dudit film
JP2007254596A (ja) * 2006-03-23 2007-10-04 Jsr Corp 絶縁膜形成用組成物、ポリマーおよびその製造方法、絶縁膜の製造方法、ならびにシリカ系絶縁膜
JP2007254597A (ja) * 2006-03-23 2007-10-04 Jsr Corp 絶縁膜形成用組成物、ポリマーおよびその製造方法、絶縁膜の製造方法、ならびにシリカ系絶縁膜
WO2007139004A1 (fr) * 2006-05-31 2007-12-06 Jsr Corporation Composition pour former des films isolants, son procédé de production, films isolants à base de silice et leur procédé de formation

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10150033A (ja) * 1996-11-19 1998-06-02 Matsushita Electric Ind Co Ltd 層間絶縁膜形成用材料及び層間絶縁膜
JP2004269692A (ja) * 2003-03-10 2004-09-30 Shin Etsu Chem Co Ltd 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜、及び半導体装置
JP2004292643A (ja) * 2003-03-27 2004-10-21 Shin Etsu Chem Co Ltd 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜、及び半導体装置
JP2005076031A (ja) * 2003-09-01 2005-03-24 Samsung Electronics Co Ltd 新規のシロキサン樹脂及びこれを用いた半導体層間絶縁膜
WO2005068538A1 (fr) * 2004-01-16 2005-07-28 Jsr Corporation Procede pour produire un polymere, polymere, composition pour former un film isolant, procede pour produire un film isolant, et film isolant
WO2005108516A1 (fr) * 2004-05-11 2005-11-17 Jsr Corporation Composition pour former un film isolant, procédé de production de ladite composition, film isolant de silice et procédé d'élaboration dudit film
JP2007254596A (ja) * 2006-03-23 2007-10-04 Jsr Corp 絶縁膜形成用組成物、ポリマーおよびその製造方法、絶縁膜の製造方法、ならびにシリカ系絶縁膜
JP2007254597A (ja) * 2006-03-23 2007-10-04 Jsr Corp 絶縁膜形成用組成物、ポリマーおよびその製造方法、絶縁膜の製造方法、ならびにシリカ系絶縁膜
WO2007139004A1 (fr) * 2006-05-31 2007-12-06 Jsr Corporation Composition pour former des films isolants, son procédé de production, films isolants à base de silice et leur procédé de formation
JP2007324283A (ja) * 2006-05-31 2007-12-13 Jsr Corp 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010090248A (ja) * 2008-10-07 2010-04-22 Jsr Corp 多層レジストプロセス用シリコン含有膜形成用組成物及びシリコン含有膜並びにパターン形成方法
JP2010106099A (ja) * 2008-10-29 2010-05-13 Jsr Corp 絶縁膜形成用組成物、ならびに絶縁膜およびその形成方法

Also Published As

Publication number Publication date
JPWO2008096656A1 (ja) 2010-05-20
TW200848451A (en) 2008-12-16

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