TW200848451A - Silicon-containing polymer, method for synthesizing the same, film-forming composition, silica film and method for forming the silica film - Google Patents

Silicon-containing polymer, method for synthesizing the same, film-forming composition, silica film and method for forming the silica film Download PDF

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TW200848451A
TW200848451A TW097104568A TW97104568A TW200848451A TW 200848451 A TW200848451 A TW 200848451A TW 097104568 A TW097104568 A TW 097104568A TW 97104568 A TW97104568 A TW 97104568A TW 200848451 A TW200848451 A TW 200848451A
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film
compound
decane
acid
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Hisashi Nakagawa
Seitarou Hattori
Naohisa Tokushige
Youhei Nobe
Masahiro Akiyama
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Jsr Corp
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    • C08G77/48Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/50Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
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    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/14Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si

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Abstract

Disclosed is a method for synthesizing a silicon-containing polymer, which comprises a step for adding a first liquid containing at least one hydrolyzable silane compound selected from hydrolyzable silane monomers (A) and hydrolyzable polycarbosilanes (B) to a second liquid containing water and a catalyst, thereby causing hydrolysis-condensation of the hydrolyzable silane compound.

Description

200848451 九、發明說明: 【發明所屬之技術領域】 .本^明係關於切之聚合物及其合成方法、膜形成用組 成物、暨二氧化矽系膜及其形成方法。 • 【先前技術】 習知,就半導體元件等的層間絕緣膜大多使用利用諸如 CVD法等真空製程所形成的二氧化矽(Si〇2)膜。而,近年 在形成具有更均句膜厚之層間絕緣膜之目的下,亦有使用 通稱SGG(SPin on Glass)膜,其係以四烧氧基梦烧的水 解生成物為主成分之塗佈型絕緣膜。此外,隨半導體元件 •等的高積體化,亦有就通稱有機S0G之以聚有機矽氧烷為 主成分的低介電常數之層間絕緣膜進行開發。 然而,隨半導體元件等之進一步高積體化與多層化,將 要求更優越的導體間電絕緣性,所以,便要求保存穩定性 良好,且更低介電常數、機械強度更優越的層間絕緣膜。 再者,在半導體裝置的製造過程中,將施行用於使絕緣 層平坦化的 CMP(Chemical Mechanical Planarization) 步驟、以及各種洗淨步驟。因此,為能適用於半導體裝置 的層間絕緣膜與保護膜等’除介電係數特性之外,尚要求 :具有機械強度、以及能承受因藥液所造成之侵蝕程度的耐 藥性。 作為低介電常數的材料,提案有如:由在氨存在下將燒 氧基砍炫進行縮合所獲得的微粒子、以及烧氧基紗燒的鹼 性部分水解物之混合物所構成的組成物(日本專利特開平 97104568 5 200848451 5-263045號公報、日本專利特開平5 31531 9號公報 或如將聚燒氧基石夕烧的驗性水解物在氨存在下施行200848451 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a cut polymer, a method for synthesizing the same, a composition for forming a film, a cerium oxide film, and a method for forming the same. [Prior Art] Conventionally, as the interlayer insulating film of a semiconductor element or the like, a cerium oxide (Si 2 ) film formed by a vacuum process such as a CVD method is often used. However, in recent years, in order to form an interlayer insulating film having a more uniform thickness of a sentence, a so-called SGG (SPin on Glass) film, which is mainly composed of a hydrolyzed product of four alkoxylated dreams, is also used. Type insulating film. In addition, with the high integration of semiconductor elements and the like, there has been development of an interlayer dielectric film having a low dielectric constant containing a polyorganosiloxane as a main component of organic SOG. However, with further integration and multilayering of semiconductor elements and the like, superior electrical insulation between conductors is required, and therefore, interlayer insulation having good storage stability and lower dielectric constant and mechanical strength is required. membrane. Further, in the manufacturing process of the semiconductor device, a CMP (Chemical Mechanical Planarization) step for flattening the insulating layer and various cleaning steps are performed. Therefore, in addition to the dielectric constant characteristics of the interlayer insulating film and the protective film which can be applied to a semiconductor device, it is required to have mechanical strength and resistance to corrosion due to the chemical solution. As a material having a low dielectric constant, there are proposed a composition comprising a mixture of fine particles obtained by condensing an alkoxy group in the presence of ammonia and a basic partial hydrolyzate of a burnt-oxygen yarn (Japan) Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei.

而獲得的塗佈液(日本專利特開平n_34〇219號公報、、、、5S 本專利特開平n_34〇22〇號公報)。然而,依該等方曰 纹仵的材料,因為反應生成物的性質並不穩定、且塗2 介電常數、龜裂对性、機械強度、及密接性等ς、: 大,因而不利於工業性生產。 動亦較 (再者’提案有藉由將聚碳料溶液與聚魏燒溶液 混合而調製成㈣液’並形成低介㈣數料膜的方^ (日本專利特開2〇〇卜127152號公報、日本專 ; :二"45317號公報)’但是該方法將有碳矽烷與聚“ 、元y刀別局部依不均勻狀態分散於塗臈申的問題。 再者,亦提案有使用從有機金屬矽烷化合物製造含碳 接之石夕烧寡聚物後,再經水解縮合而獲得之有機石夕酸^ 合體的方法(國際公開案號第·2/〇98955號公報),ς依 照該方法所獲得的材料,屬於反應生成物之穩定性差 適於長期保管的材料,且有對基板密接性差的問題。 =者4提案有將高分技聚碳錢進行水解縮合而獲得 氐電係數絕緣膜的形成方法(美國專利第6 〇〇 ^ ’但將聚合物塗佈於基板上之後,將需要利用氨施行 熟成處理、以及三甲基石夕炫化處理、5〇〇。〇高溫硬化等事 程處理,並不屬適合實用製程的材料。 【發明内容】 本發明之目的在於提供:可適用於期待高積體化與多層 97104568 200848451 化的半導體元件等之中,抑制粗大粒子的產生、保存穩定 2優越’且能使用於具有低介電常數與低吸濕性、機械、強 度與耐藥性均優越之絕緣臈形成的含矽之聚合物及其合 ^方法,以及含有上述含矽之聚合物的膜形成用組成物: 其製造方法。 本發明另一目的在於提供具有低介電常數與低吸濕 性,且機械強度與耐藥性均優越的二氧化石夕系膜及其形成、 方法。 、 \ 本發明-態樣的含石夕之聚合物之合成方法,係包括有. ^將含有從(A)水解性矽烷單體與(B)水解性聚碳矽烷中 選擇之至少1種水解性矽烷化合物的第1液,添加於含有 水與觸媒的第2液中,使該水解性矽烷化合物進行水解 合的步驟。 本發明中,所謂「水解性」係指具有含矽之聚合物在製 造時會被水解之基。 、 ;、上述含矽之聚合物之合成方法中,當將上述第丨液添加 於上述第2液中之際,上述第2液的溫度係可達4(rc以 上0 上述§矽之聚合物之合成方法中,上述(A)水解性矽燒 單體可為選擇自下述一般式(1M3)所示化合物群組的石^ 烧化合物。The coating liquid obtained is disclosed in Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. However, according to the material of the ruthenium ruthenium, the nature of the reaction product is not stable, and the dielectric constant, cracking property, mechanical strength, and adhesion of the coating 2 are large, which is disadvantageous to the industry. Sexual production. In addition, the proposal has a method of preparing a (four) liquid film by mixing a polycarbon solution with a poly-wet solution and forming a low-medium (four) number of film (Japanese Patent Laid-Open No. 127152) Bulletin, Japan Special; :2 "45317]) However, this method will have the problem that the carbon decane and the poly y, the y y knives are partially dispersed in the uneven state, and the application is also used. A method for producing an organic oxalic acid compound obtained by hydrolyzing and condensing a carbon-containing smectite oligomer after the production of a carbaryl compound (International Publication No. 2/〇98955) The material obtained by the method belongs to a material which is poor in stability of the reaction product and is suitable for long-term storage, and has a problem of poor adhesion to the substrate. The proposal of 4 is to hydrolyze and condense the high-scoring carbon to obtain the electric coefficient insulation. Method for forming a film (U.S. Patent No. 6 ' ^ ', but after applying a polymer onto a substrate, it is necessary to perform a ripening treatment with ammonia, a trimethyl sulphate treatment, and a high temperature hardening process. Processing is not suitable OBJECT OF THE INVENTION The object of the present invention is to provide a semiconductor element which is expected to be highly integrated and multilayered, and to suppress generation and storage stability of coarse particles. a ruthenium-containing polymer formed by an insulating ruthenium having a low dielectric constant and low hygroscopicity, excellent mechanical, strength, and chemical resistance, and a method for forming the same, and a film forming composition containing the above ruthenium-containing polymer The present invention has another object of the present invention to provide a cerium oxide film having a low dielectric constant and a low hygroscopicity and superior in mechanical strength and chemical resistance, and a method and method for forming the same. - a method for synthesizing a polymer containing a Zeolite, comprising: containing at least one hydrolyzable decane compound selected from the group consisting of (A) a hydrolyzable decane monomer and (B) a hydrolyzable polycarbane The first liquid is added to the second liquid containing water and a catalyst to hydrolyze the hydrolyzable decane compound. In the present invention, the term "hydrolyzable" means that the polymer having ruthenium is produced. In the method for synthesizing the above-mentioned ruthenium-containing polymer, when the second liquid is added to the second liquid, the temperature of the second liquid can reach 4 (rc or more). In the method for synthesizing the polymer of the above formula, the (A) hydrolyzable calcined monomer may be a pyrotechnic compound selected from the group of compounds represented by the following general formula (1M3).

RaSi(〇R1)4_a ······⑴ (式中’ R係指氫原子、氟原子或1價有機基;Rl係指1 價有機基;a係指1〜3的整數。) 97104568 7 200848451RaSi(〇R1)4_a · (1) (wherein R represents a hydrogen atom, a fluorine atom or a monovalent organic group; R1 means a monovalent organic group; and a means an integer of 1 to 3). 97104568 7 200848451

Si(0R2)4 ······(2) (式中,R2係指1價有機基。) R'(R40)3-bSi-(R7VSi(〇R5)3、cR' ••…(3) 〔式中,R3〜R6係相同或互異,分 .〆士一 ^^ 刀別表不1價有機基;b ,、c係表不相同或互異的〇〜2數備· 7 # “ 值,R係表示氧原子、伸 苯基或-(CH2),-所示之基(其中,爪你,。 n ^ , 甲m係1〜6的整數);d係指 ϋ 或 1。〕 ,上述(Β)水解性聚碳 示結構單位的聚碳石夕Si(0R2)4 ······(2) (wherein R2 means a monovalent organic group.) R'(R40)3-bSi-(R7VSi(〇R5)3, cR' ••...( 3) [In the formula, R3~R6 are the same or different, and the division is gentleman. ^^ The knife is not a monovalent organic base; b, and c are different or different from each other. "Value, R is a group represented by an oxygen atom, a phenyl group or a -(CH2), - (wherein, a paw, you. n ^ , an integer of 1 to 6 of the methyl group); d means ϋ or 1. 〕, the above (Β) hydrolyzable polycarbon shows the structural unit of the carbon stone

上述含矽之聚合物之合成方法令 石夕烧係可為具有下述一般式(4)所 烷。 [化1]The method for synthesizing the above-mentioned ruthenium-containing polymer allows the shixi firing system to have the following general formula (4). [Chemical 1]

••…(4) 乂式中’r係指選擇自氫原子、齒原子、經基、烧氧基、 i乳基、核基、w酸基、三氟甲賴基、烧基、芳香 基、烯丙基及環氧丙基所構成群組的基;R9係指選擇自齒 原子、經基、燒氧基、醯氧基、績酸基、甲賴基、三氣 甲石黃酸基基、料基、烯丙基及環氧丙基所構成群組 的f ’ Rl°、^11係相同或互異’表示選擇自鹵原子、經基、 燒氧基、酸氧基、魏基、甲績酸基、三氟甲魏基、碳 數2〜6的,ί、芳香基、烯丙基、及環氧丙基所構成群組 的基;R〜R係相同或互異,表示取代或非取代的亞$ 97104568 8 200848451 基、伸烷基、伸烯基、伸炔基、伸芳基;χ、y、z分別表 示〇〜10,000的數值,且滿足5<1作+ 2<1〇,〇〇〇的條件。) 上述含矽之聚合物之合成方法中,上述水解性矽烷化合 :物係上述(A)水解性矽烷單體與上述(B)水解性聚碳石^ -烷,且相對於上述(B)水解性聚碳矽烷的完全水解縮合物 1〇〇重量份,上述(A)水解性矽烷單體為bwoo重量=。 上述含矽之聚合物之合成方法中,上述觸媒係從鹼性化 合物、酸性化合物、及金屬螯合化合物選擇之至少1種的 '化合物。此情況,上述鹼性化合物係可為下述一般式、 所不之含氮化合物。 (XTxVNXY .··.·.(5) (式中’ X、X2、X3、χ4係指獨立的氫原子、碳數 的烧基、經烧基、芳香基或芳烧基;γ係指鹵原子= 價陰離子性基;g係指1〜4的整數。) 再者,此情況,上述酸性化合物係可為有機酸。或 此情況,上述金屬螯合化合物係可為下述一 , 之金屬螯合化合物。 又式(6)所示 eM(0R )f-( 〔式中,Rl5係指螯合齊i ; μ係指金屬原、子.r16 ;:5·的烧基、或碳數6〜20的芳香基;f係指金屬M二炭數 4貝,e係指1〜f的整數。〕 勺原子 本發明-態樣的含石夕之聚合物係依 本發明一態樣的膜形成用組成物 ^ ^丁合成。 合物、與有機溶劑。 3有上述含秒之聚 97104568 200848451 本發明一態樣的二氧化矽系膜之形成方法,係包括有· 將上述膜形成用組成物塗佈於基板上,而形成塗膜的步 驟,以及對上述塗膜施行硬化處理的步驟。 本發明-態樣的二氧化石夕系膜係依上述二氧化石夕系膜 之形成方法而獲得。 μ 、 根據上述含石夕之聚合物之製造方法,藉由包括有將 從(Α)水解性矽烷單體與(Β)水解性聚碳矽烷選擇之至少1 種水解㈣合物的第1液,添加於含有水與觸媒的第 2液中’並使該水解性錢化合物進行水觸合的步驟, 則因為能使保存穩定性優越,且抑制粗大粒子產生,因而 可獲得分子量的變動較少,且抑制了凝膠化的含石夕之聚合 物0 ° 上述膜形成用組成物係含有上诚人 ,上迷合矽之聚合物、與有機 溶劑,而上述含矽之聚合物的分子旦Μ 一 J刀于里變動較少,具有均勻 的二維結構,因而將抑制凝膠化 ^ ^ ;丨電常數較低,所以藉••...(4) In the formula, 'r is selected from hydrogen atom, tooth atom, meridine, alkoxy group, i-milyl group, nucleobase group, w acid group, trifluoromethyl lysyl group, alkyl group, aromatic group. a group consisting of allyl and epoxypropyl groups; R9 is selected from the group consisting of a tooth atom, a mesogenic group, an alkoxy group, a decyloxy group, a benzyl group, a methyl group, and a trihalite group. The groups f'Rl°, ^11 are the same or different from each other in the group consisting of a base group, a base group, an allyl group and a glycidyl group, which are selected from a halogen atom, a trans group, an alkoxy group, an acidoxy group, and a Wei group. A group of groups consisting of a group of acid groups, a trifluoromethyl group, a carbon number of 2 to 6, a ί, an aryl group, an allyl group, and an epoxy propyl group; R to R are the same or different, indicating Substituted or unsubstituted sub-$97104568 8 200848451 benzyl, alkylene, alkenyl, alkynyl, aryl; χ, y, z represent a value of 〇~10,000, respectively, and satisfy 5 <1 for + 2< 1 〇, 〇〇〇 condition. In the method for synthesizing the ruthenium-containing polymer, the hydrolyzable decane compound is the (A) hydrolyzable decane monomer and the (B) hydrolyzable polycarbosulfide, and the above (B) The hydrolyzable polycarbosilane complete hydrolysis condensate is 1 part by weight, and the above (A) hydrolyzable decane monomer is bwoo weight =. In the method for synthesizing the ruthenium-containing polymer, the catalyst is at least one selected from the group consisting of a basic compound, an acidic compound, and a metal chelate compound. In this case, the above basic compound may be a general formula or a nitrogen-containing compound. (XTxVNXY . . . . (5) (wherein X, X2, X3, and χ4 are independent hydrogen atoms, carbon number alkyl groups, burnt groups, aromatic groups or aryl groups; γ systems are halogens Atom = avalent anionic group; g means an integer of 1 to 4. Further, in this case, the acidic compound may be an organic acid. Alternatively, the metal chelate compound may be one of the following metals. a chelate compound, and eM(0R)f- (wherein Rl5 means chelation; i means a base of a metal, a sub.r16;:5, or a carbon number; An aromatic group of 6 to 20; f means a metal M having a carbon number of 4 Å, and e means an integer of 1 to f.] Spoon atom. The present invention-containing cerium-containing polymer is according to one aspect of the present invention. The composition for forming a film is a compound and an organic solvent. 3 The above-mentioned second-containing poly 97104568 200848451 A method for forming a cerium oxide-based film according to an aspect of the present invention includes a step of coating a composition on a substrate to form a coating film, and a step of subjecting the coating film to a hardening treatment. The present invention - the aspect of the dioxide film is based on the above two Obtained according to the method for forming a fossil cerium film. μ, according to the method for producing a polymer containing the sulphate, at least comprising selecting at least (hydroquinone) hydrolyzable decane monomer and (hydrazine) hydrolyzable polycarbon decane. The first liquid of the hydrolyzed (tetra) compound is added to the second liquid containing water and the catalyst, and the step of causing the hydrolyzable money compound to be brought into contact with water is excellent in storage stability and coarseness is suppressed. When the particles are generated, it is possible to obtain a polymer having a small variation in molecular weight and suppressing gelation. The above-mentioned film-forming composition contains the polymer of the group, the organic solvent, and the organic solvent. The molecular enthalpy of the above-mentioned cerium-containing polymer has less variation in the J-knife and has a uniform two-dimensional structure, thereby inhibiting gelation and lowering the electric constant, so

由使用上述膜形成用組成物形成絕 ^ ^ .. 巴、、彖膜,可獲得機械強度 耐樂性均優越,膜中無層分離, 較低的絕緣膜。 且"電常數與吸濕性均 上述一氧化石夕系膜係介電常數輕水 ^ ^ ^ J ’而機械強度、密接 性及耐樂性均優越,且膜中無層分離情形。 【實施方式】 之聚合物及其合成 膜及其形成方法, 以下,針對本發明一實施形態的含矽 方法、膜形成用組成物、暨二氧化矽系 進行具體說明。 μ 97104568 10 200848451 ί.含矽之聚合物及其合成方法 本發明一實施形態的含矽之聚合物之合成方法, 從⑴水解性残單體(以下亦稱「⑴成分」) 及⑻水解性聚碳石夕炫(以下亦稱「⑻成分」)」小) 1種水解性矽烷化合物的第丨液, 至夕 幻弟u ’添加於含有水與觸媒的 =液中’而使該水解性傾化合物進行水解縮合的步 本實施形態的含梦之聚合物之合成方法中,# 添加於第2液中之際,繁?、右沾、w ώ 、 液 T U弟2液的溫度較佳為40°C以上, 更mot以上。當第2液的溫度未滿㈣時,水解縮合 的私度將呈較低狀態,將有無法充分獲得本發明效果的情 :兄。此外,將第1液添加於第2液+之際的速度,雖依昭 弟1液中的概合物濃度、與第2液中的水及觸媒濃度 而異’但是通常為30分〜10小時。具體而言,每單位時 ,、水解性料化合物相對於每單位第2液量的添加速度 較佳為 1x10—4 〜lxio'g · min-i · g’ ,更佳 5x10 〜5x10 2(g · min_i · g-i)。 旦水解性錢化合物相對第!液的濃度,較佳為卜重 篁% ’更佳2〜30重量% ’特佳3〜2〇重量%。當上述濃度超 過50重量%時、或未滿1重量%時,將有獲得分子量分佈 較廣之聚合物的情況。此外,藉由使用由使用U)成分與 =)成取分二者作為水解性料化合物並施行水解縮合所獲 得之承〇物而开》成膜,便可獲得耐藥性優越且吸濕性低的 97104568 11 200848451 。第2液的水含有量較佳為5〜80重量%,更佳 於當上述水含有量超過8〇重量 里 之聚合物析出的可能性,反…:有將由聚合所獲得 解縮合未進行的情況。 “Μ重量%時’有水 第2液令的觸媒濃度較佳 0.005〜1重量%。若上、f雜拔、曲由〇〇1 10重量%,更佳 里右上述觸媒濃度超過10重量%、赤去次 .001重量%時’將有因分子量變為過大而導致:: 粒子,或者反而導致反應幾乎不進行的情況。生粗大 溶為諸如醇, 弟1液中可使用的溶劑具體例將於後述。 弟2液中可使用的溶劑最好為諸如 溶劑’最好使用與在第1液中所使用溶劑 的各成分進行說明。 之來合物而所使用 1 · 1 · (A)成分By using the above-mentioned film-forming composition to form a film, a ruthenium film, it is possible to obtain a mechanical strength and excellent typhos resistance, and there is no layer separation in the film, and a low insulating film. And "Electrical constant and hygroscopicity are all described above. The above-mentioned monocrystalline oxide system has a dielectric constant of light water ^ ^ ^ J ′ and is superior in mechanical strength, adhesion and endurance, and no layer separation in the film. [Embodiment] The polymer, the synthetic film thereof, and the method for forming the same, the cerium-containing method, the film-forming composition, and the cerium oxide system according to an embodiment of the present invention will be specifically described below. μ 97104568 10 200848451 ί. The ruthenium-containing polymer and the method for synthesizing the same according to the embodiment of the present invention, the method for synthesizing the ruthenium-containing polymer, from (1) a hydrolyzable residual monomer (hereinafter also referred to as "(1) component") and (8) hydrolyzability Polycarbonate Xi Xuan (hereinafter also referred to as "(8) component")" small) A hydrolyzable decane compound of the first sputum, to the sylvestre u 'added to the water and the catalyst = liquid to make the hydrolysis In the synthesis method of the dream-containing polymer of the embodiment of the present invention, when the compound is hydrolyzed and condensed, # is added to the second liquid, and is complicated. , right dipping, w ώ, liquid T U brother 2 liquid temperature is preferably 40 ° C or more, more than mot. When the temperature of the second liquid is less than (four), the degree of hydrolytic condensation will be low, and there will be a case where the effect of the present invention cannot be sufficiently obtained. In addition, the speed at which the first liquid is added to the second liquid + is different from the concentration of the complex in the liquid of the second liquid and the concentration of the catalyst in the second liquid, but is usually 30 minutes. 10 hours. Specifically, the rate of addition of the hydrolyzable compound per unit of the second liquid amount per unit time is preferably 1×10 −4 〜 lxio′g · min-i · g′ , more preferably 5×10 ~5×10 2 (g · min_i · gi). Once the hydrolyzable money compound is relative! The concentration of the liquid is preferably more preferably 2 to 30% by weight, more preferably 2 to 2% by weight. When the above concentration exceeds 50% by weight or less than 1% by weight, a polymer having a broad molecular weight distribution may be obtained. Further, by using a substrate obtained by using a component of U) and a component as a hydrolyzable compound and performing hydrolytic condensation, a film formation is obtained, and excellent drug resistance and hygroscopicity can be obtained. Low 97104568 11 200848451. The water content of the second liquid is preferably from 5 to 80% by weight, more preferably the possibility that the polymer having a water content of more than 8 Å is precipitated, and the reverse is not obtained by depolymerization obtained by the polymerization. Happening. "At the time of Μ% by weight", the concentration of the catalyst having the second liquid solution is preferably 0.005 to 1% by weight. If the upper and the f are mixed, and the y is 10% by weight, the concentration of the above catalyst is more than 10 When the weight is % and the red is less than .001% by weight, there will be a case where the molecular weight becomes too large: : particles, or the reaction may hardly proceed. The crude solution is a solvent such as an alcohol, which can be used in the first liquid. Specific examples will be described later. The solvent which can be used in the second liquid is preferably a solvent, and it is preferable to use each component of the solvent used in the first liquid. The composition is used in the case of 1 · 1 · ( A) ingredients

(A)成分最好係選擇自下述一般式(1)~( 群組的矽⑨化合物。(A)成分係可與其 :化合物 ⑻成分進行縮合,而形成心㈣鍵結。)心或後述 RaSi(OR1)4.a ····.·(1) (式中’R係指氫原子、I原子或有機基 價有機基;a係指1〜3的整數。) ΊιThe component (A) is preferably selected from the following general formula (1) to (group 矽9 compound; (A) component can be condensed with the compound (8) component to form a heart (four) bond.) Heart or later RaSi(OR1)4.a ······(1) (wherein 'R means a hydrogen atom, an I atom or an organic valence organic group; a means an integer of 1-3.) Ίι

Si(〇R2)4 ······(2) (式中,R2係指1價有機基。) R3b(R40)3-bSi-(R7)d~Si(0R5)3-〇R6c ......(3) 97104568 12 200848451 〔式中’R〜R6係相同或互異,分別表* i價有機基^ ” c係相同或互異,表* 〇〜2數值;r7係指氧原子、伸苯 基或-⑽2 V所示基(其+,m係丄〜6的整數);d係指 1 ° ] 「能構成(A)成分的上述一般式(i )所示化合物(以下稱 人化口物1」)、上述一般式(2)所示化合物(以下稱「化 合物2」)、上述—般式(3)所示化合物(以下稱「化合物 3」),可使用下示物。其中,(A)成分最好使用化合物^ 與化合物2,此情況’化合物i與化合物2的使用量,係 以化合物1:化合物2 = 100:0〜50:50為佳。 1 · 1 · 1 ·化合物1 一 /又,(1)中,R、Rl所示1價有機基係可舉例如·· 烧基烯基、方香基、烯丙基、環氧丙基等。其中,卜 R所示之1價有機基最好為烷基或苯基。 其中’烷基係可舉例如··甲基、乙基、丙基、丁基 取好奴數卜5 ’該等院基可為鏈狀、亦可為分枝,更可將 氫原:取代為氟原子等。芳香基係可舉例如··苯基、蔡基、 甲f本基、乙本基、氯苯基、溴苯基、氟苯基等。稀基係 =例如:乙稀基、丙稀基、3-丁稀基、3_戍稀二 婦基。 化合物1的具體例係可舉例如:甲基三甲氧基錢、甲 基三乙氧基我、甲基三正丙氧基石夕 石夕炫、甲基三正丁氧切燒、 =乳基 茸二笙—罘—丁軋基矽烷、甲 二丁乳基矽烷,三苯氧基矽烷、乙基三甲氧基 97104568 13 200848451 矽烷、乙基三乙氧基矽烷、乙基三正丙氧基矽烷、乙基三 異丙氧基矽烷、乙基三正丁氧基矽烷、乙基三第二丁氧基 矽烷、乙基三第三丁氧基矽烷、乙基三苯氧基矽烷、正丙 : 基三曱氧基矽烷、正丙基三乙氧基矽烷、正丙基三正丙氧 , 基矽烷、正丙基三異丙氧基矽烷、正丙基三正丁氧基矽 烷、正丙基三第二丁氧基矽烷、正丙基三第三丁氧基矽 烷、正丙基三苯氧基矽烷、異丙基三曱氧基矽烷、異丙基 三乙氧基矽烷、異丙基三正丙氧基矽烷、異丙基三異丙氧 € 基矽烷、異丙基三正丁氧基矽烷、異丙基三第二丁氧基矽 烷、異丙基三第三丁氧基矽烷、異丙基三苯氧基矽烷、正 丁基三甲氧基矽烷、正丁基三乙氧基矽烷、正丁基三正丙 氧基矽烷、正丁基三異丙氧基矽烷、正丁基三正丁氧基矽 烷、正丁基三第二丁氧基矽烷、正丁基三第三丁氧基矽 烷、正丁基三苯氧基矽烷、第二丁基三曱氧基矽烷、第二 丁基三乙氧基矽烷、第二丁基三正丙氧基矽烷、第二丁基 , 三異丙氧基矽烷、第二丁基三正丁氧基矽烷、第二丁基三 \ ^ 第二丁氧基矽烷、第二丁基三第三丁氧基矽烷、第二丁基 三苯氧基石夕烧、第三丁基三曱氧基石夕烧、第三丁基三乙氧 基矽烷、第三丁基三正丙氧基矽烷、第三丁基三異丙氧基 ; 矽烷、第三丁基三正丁氧基矽烷、第三丁基三第二丁氧基 矽烷、第三丁基三第三丁氧基矽烷、第三丁基三苯氧基矽 烷、苯基三曱氧基矽烷、苯基三乙氧基矽烷、苯基三正丙 氧基矽烷、苯基三異丙氧基矽烷、苯基三正丁氧基矽烷、 苯基三第二丁氧基矽烷、苯基三第三丁氧基矽烷、苯基三 97104568 14 200848451 苯氧基矽烷、二甲基二甲氧基矽烷、二甲基二乙氧基矽 烷、二甲基二正丙氧基矽烷、二甲基二異丙氧基矽烷、二 甲基二正丁氧基矽烷、二曱基二第二丁氧基矽烷、二曱基 ’ 二第三丁氧基矽烷、二曱基二苯氧基矽烷、二乙基二曱氧 • 基矽烧、二乙基二乙氧基矽烧、二乙基二正丙氧基矽烷、 二乙基二異丙氧基砍烧、二乙基二正丁氧基碎烧、二乙基 二第二丁氧基矽烷、二乙基二第三丁氧基矽烷、二乙基二 苯氧基矽烷、二正丙基二甲氧基矽烷、二正丙基二乙氧基 € 矽烷、二正丙基二正丙氧基矽烷、二正丙基二異丙氧基矽 烷、二正丙基二正丁氧基矽烷、二正丙基二第二丁氧基矽 烷、二正丙基二第三丁氧基矽烷、二正丙基二苯氧基矽 烷、二異丙基二曱氧基矽烷、二異丙基二乙氧基矽烷、二 異丙基二正丙氧基矽烷、二異丙基二異丙氧基矽烷、二異 丙基二正丁氧基矽烷、二異丙基二第二丁氧基矽烷、二異 丙基二第三丁氧基矽烷、二異丙基二苯氧基矽烷、二正丁 I 基二甲氧基矽烷、二正丁基二乙氧基矽烷、二正丁基二正 丙氧基石夕烧、二正丁基二異丙氧基石夕烧、二正丁基二正丁 氧基矽烷、二正丁基二第二丁氧基矽烷、二正丁基二第三 丁氧基矽烷、二正丁基二苯氧基矽烷、二第二丁基二曱氧 基矽烷、二第二丁基二乙氧基矽烷、二第二丁基二正丙氧 基矽烷、二第二丁基二異丙氧基矽烷、二第二丁基二正丁 氧基矽烷、二第二丁基二第二丁氧基矽烷、二第二丁基二 第三丁氧基矽烷、二第二丁基二苯氧基矽烷、二第三丁基 二甲氧基矽烷、二第三丁基二乙氧基矽烷、二第三丁基二 97104568 15 200848451 正丙氧基石夕燒、二第三丁基二異丙氧基石夕貌、二第三丁基 =丁乳基我、二第三丁基二第二丁氧基雜、二第三 其:二?三丁氧基矽烷、二第三丁基二苯氧基矽烷、二苯 二氧基⑦燒、二苯基二乙氧基#燒、二苯基二正丙氧 二夕院苯基—異丙氧基石夕烧、二苯基二正丁氧基石夕 二、二苯基二第二丁氧基矽烷、二苯基二第三丁氧基矽 本基二苯氧基石夕烧。該等係可單獨使用1種、亦可 同b使用2種以上。 尸化二:1的特佳化合物係可舉例如··甲基三甲氧基矽 二〆:土二乙乳基石夕烧、甲基三正丙氧基石夕炫、甲基三異 乙基三甲氧基石夕燒、乙基三乙氧基石夕烧、苯 ,:甲=錢、苯基三乙氧基錢、二甲基二甲氧 乙=基二乙氧基石夕烧、二乙基二甲氧基石夕炫、二乙基 二=院、:苯基二甲氧基石夕燒、二苯基二乙氧基石夕 、4係可早獨使用i種、亦可同時使用2種以上。 1 1· 2·化合物2 上述一般式(2)中,R2的1價右嬙π伽 -般式⑴的R、R1所例示者為相同的基。+例如與上述 化口物2的具體例係可舉例如:四甲氧基錢、四 基石夕院、四正丙氧基石夕烧、四異丙氧基石夕燒、四正丁氧基 =等四丁氧基㈣、四第三丁氧基石夕烧、四苯氧基 2二 化合物係可舉例如:四甲氧基石夕燒、四乙 ^基夕烧。該等係可單獨使用1種、亦可同時使用2種以 97104568 16 200848451 1. 1. 3.化合物3 上述一般式(3)中,R3〜R6係可舉例如與上述一般式ο) 的R、R1所例示者為相同的基。 • 一般式(3)中,就d=0之化合物3係可舉例如:六曱氧基 •二矽烷、六乙氧基二矽烷、六苯氧基二矽烷、2一 五甲氧基-2-甲基二矽烷、1,1,1,2, 2-五乙氧基-2—甲基二 矽烷、1,1,1,2, 2一五笨氧基-2-曱基二矽烷、l l J 2 2一 五甲氧基-2-乙基二矽烷、1,1,1,2, 2-五乙氧基一2—乙基二 f 矽烷、1,1,1,2, 2-五苯氧基-2-乙基二矽烷、l i j 2 2一 五甲氧基-2-苯基二矽烷、1,M,2, 2一五乙氧基一2一苯基二 砍烧、1,1,1’2,2 -五本氧基-2 -苯基二發烧、1 1 2 2-四 曱氧基-1,2-二曱基二矽烷、1,1,2, 2-四乙氧基-!,2一二曱 基^一砍烧、-四苯氧基—1,2-二曱基二碎烧、 1,1,2, 2-四甲氧基-1,2-二乙基二矽烷、l u,2-四乙氧 基-1,2 -二乙基一石夕烧、1,1,2, 2 -四苯氧基_1,2-二乙基二 (,石夕烧、1,1,2,2-四曱氧基~1,2 -二苯基二石夕烧、i,i,2,2-四乙氧基-1,2 一本基^一秒烧、1,1,2,2 -四苯氧基-1,2-二苯基二矽烷、1,1,2-三甲氧基-1,2, 2-三甲基二矽烷、 1,1,2-三乙氧基-1,2,2-三甲基二矽烷、ι,ι,2-三苯氧基 • -1,2,2-二甲基一砍烧、1,1,2-三甲氧基-;[,2,2-三乙基二 石夕烧、1,1,2 -二乙氧基_1,2,2-三乙基二石夕炫、1,1,2-三 苯氧基-1,2, 2-三乙基二矽烷、i 1,三甲氧基-1,2, 2-三苯基二矽烷、1,1,2-三乙氧基-1,2, 三苯基二矽烷、 1,1,2-三苯氧基-1,2, 2-三苯基二矽烷、1,2-二甲氧基 97104568 17 200848451 -一 1,1’2, 2-四曱基二矽烷q’2—二乙氧基四甲基 一矽烷、1,2-二苯氧基-;!,L 2, 2-四曱基二矽烷、I 2_二 曱氧基-1,1,2,2-四乙基二石夕烧、1>2、二乙氧基」,^2-四乙基一石夕烧、1,2一二苯氧基_】,I 2, 2一四乙基二石夕烧、 1,2-一曱氧基-;[,l 2, 2_四苯基二矽烷、l 2_二乙氧基 -1,1,2,2-四苯基二矽烷、1,2_二苯氣基_1,1,22_四苯基 二矽烷等。 〇 該等之中,最好為例如:六甲氧基二矽烷、六乙氧基二 矽烷:U,2, 2-四曱氧基-1,2-二曱基二矽烷、1,1,2, 2-四乙氧基-1,2-二甲基二矽烷、;[,12, 2一四甲氧基一 I〗一 一笨基一矽烷、1,2一二曱氧基一 ;[,kg,2一四曱基二矽烷、 1,2-一乙氧基—ι,ι,2, 2-四甲基二矽烷、l 2一二曱氧基 1,1,2, 2-四苯基二矽烷、1,2-二乙氧基—u,2, 四苯基 一砍烧等。 再者,一般式(3 )中,d= 1的化合物3係可舉例如:雙(三 曱氧基矽烷基)曱烷、雙(三乙氧基矽烷基)曱烷、雙(三正 丙氧基矽烷基)曱烷、雙(三異丙氧基矽烷基)甲烷、雙(三 正丁氧基矽烷基)曱烷、雙(三第二丁氧基矽烷基)曱烷、 雙(二第三丁氧基矽烷基)甲烷、1,2-雙(三曱氧基矽烷基) • 乙院、丨,2 —雙(三乙氧基矽烷基)乙烷、1,2-雙(三正丙氧 :基矽烷基)乙烷、1,2-雙(三異丙氧基矽烷基)乙烷、丨,2一 雙(三正丁氧基矽烷基)乙烷、12 —雙(三第二丁氧基矽烷 基)乙烷、1,2-雙(三第三丁氧基矽烷基)乙烷、ι 二甲氧 基甲石夕烧基)-1 -(三甲氧基石夕烧基)甲烧、1 -(二乙氧基甲 97104568 18 200848451 矽烷基)-1-(三乙氧基矽烷基)曱烷、1-(二正丙氧基甲石夕 烧基-(三正丙氧基石夕烧基)曱烧、1-(二異丙氧基曱石夕 烷基)-1 -(三異丙氧基矽烷基)甲烷、1-(二正丁氧基甲石夕 : 烷基)_1 -(三正丁氧基矽烷基)曱烷、1-(二第二丁氧基甲 碎烧基)-1-(二弟二丁氧基石夕烧基)甲烧、1 -(二第三丁氧 基甲矽烷基)-1 -(三第三丁氧基矽烷基)曱烷、1 一(二曱氧 基甲矽烷基)-2-(三甲氧基矽烷基)乙烷、1 一(二乙氧基甲 碎烧基)- 2-(二乙氧基砍烧基)乙烧、1-(二正丙氧基曱秒 ( 烧基)-2-(三正丙氧基石夕烧基)乙烧、1-(二異丙氧基曱矽 烷基)-2-(三異丙氧基矽烷基)乙烷、i-(二正丁氧基甲石夕 烷基)-2-(三正丁氧基矽烧基)乙烷、ι —(二第二丁氧基甲 矽烧基)-2-(三第二丁氧基矽烷基)乙烷、ι —(二第三丁氧 基曱矽烷基)-2-(三第三丁氧基矽烷基)乙烷、雙(二甲氧 基甲矽烷基)甲烷、雙(二乙氧基曱矽烷基)甲烷、雙(二正 丙氧基甲矽烷基)甲烷、雙(二異丙氧基甲矽烷基)甲烷、 G雙(二正丁氧基甲矽烷基)甲烷、雙(二第二丁氧基甲矽烷 基)甲烷、雙(二第三丁氧基甲矽烷基)甲烷、一雙(二甲 氧基甲矽烷基)乙烷、1,2-雙(二乙氧基甲矽烷基)乙烷、 1,2-雙(二正丙氧基甲石夕烷基)乙烷、I?- 里 •甲矽烷基)乙烷、丨,2 —雙(二正丁氧基甲矽烷基)乙烷、1,2 -;雙(一第二丁氧基甲矽烷基)乙烷、1,2-雙(二第三丁氧基 甲矽烷基)乙烷、1,2一雙(三甲氧基矽烷基)苯、丨,2一雙(2 乙氧基矽烷基)苯、丨,2 —雙(三正丙氧基矽烷基)苯、丨,2一 雙(三異丙氧基梦絲)苯、U-雙(三正丁氧基砍烧基) 97104568 19 200848451 笨、1,2-雙(三第二丁氧基矽烷基)苯、丨,2—雙(三第三丁 氧基矽烷基)苯、丨,3-雙(三曱氧基矽烷基)苯、丨,3 —雙(三 乙氧基矽烷基)苯、丨,3 —雙(三正丙氧基矽烷基)苯、丨,^ 雙(三異丙氧基矽烷基)苯、1,3-雙(三正丁氧基矽烷基) '苯、丨,3 —雙(三第二丁氧基矽烷基)苯、1,3-雙(三第三丁 氧基矽烷基)苯、丨,4 —雙(三曱氧基矽烷基)苯、丨,4-雙(三 乙氧基矽烷基)苯、丨,4-雙(三正丙氧基矽烷基)苯、丨,4一 雙(三異丙氧基矽烷基)苯、丨,4—雙(三正丁氧基矽烷基) 苯、1,4-雙(三第二丁氧基矽烷基)苯、丨,4—雙(三第三丁 氧基矽烷基)苯等。 該等之中’較佳例有如:雙(三曱氧基矽烷基)曱烷、雙 (二乙氧基矽烷基)曱烷、1,2-雙(三曱氧基矽烷基)乙烷、 1,2雙(二乙氧基石夕烧基)乙烧、1 一(二曱氧基曱石夕烧 基)-1 -(三曱氧基矽烷基)曱烷、1 —(二乙氧基曱矽烷 基)-1 -(二乙氧基石夕烧基)曱烧、1一(二曱氧基曱石夕烧 I;基)一2 一(二曱氧基矽烧基)乙烧、1 —(二乙氧基曱矽烧 基)-2-(二乙氧基矽烷基)乙烷、雙(二曱氧基曱矽烷基) 曱烧、雙(二乙氧基甲石夕烧基)曱烧、1,2一雙(二甲氧基甲 矽烧基)乙烷、1,2-雙(二乙氧基曱矽烷基)乙烷、丨,2一雙 :(二曱氧基石夕燒基)苯、1,2-雙(三乙氧基石夕烧基)苯、1,3-:雙(二甲氧基石夕烧基)苯、1,3-雙(三乙氧基矽燒基)苯、 1,4-雙(三甲氧基矽烷基)苯、ι,4-雙(三乙氧基矽烷基) 苯等。 上述化合物3係可單獨使用1種、亦可同時使用2種以 97104568 20 200848451 L 2. (B)成分 如上述,(B)成分係屬於水解性聚碳石夕烷。 (B)成分係可舉如且右π、+、 . . ^ Ν 一 有下述一般式(4)所示之結構單位 的聚碳矽烷化合物(以下稱「化合物4」)。 [化2]Si(〇R2)4 ······(2) (wherein R2 means a monovalent organic group.) R3b(R40)3-bSi-(R7)d~Si(0R5)3-〇R6c . .....(3) 97104568 12 200848451 [In the formula, 'R~R6 are the same or different, respectively, table * i-valent organic base ^ ′ c are the same or different, table * 〇 ~ 2 value; r7 means An oxygen atom, a phenyl group or a group represented by -(10)2 V (the +, m is an integer of 丄~6); d means 1 °] "the compound of the above general formula (i) which can constitute the component (A) ( Hereinafter, the compound (1), the compound represented by the above formula (2) (hereinafter referred to as "compound 2"), and the compound represented by the above formula (3) (hereinafter referred to as "compound 3") can be used. Display. Among them, the component (A) is preferably a compound and a compound 2, and in this case, the compound i and the compound 2 are used in an amount of the compound 1: compound 2 = 100:0 to 50:50. 1 · 1 · 1 · Compound 1 / Further, in (1), the monovalent organic group represented by R and R1 may, for example, be an alkyl group, a aryl group, an allyl group or a propylene group. Among them, the monovalent organic group represented by R is preferably an alkyl group or a phenyl group. The 'alkyl group can be, for example, a methyl group, an ethyl group, a propyl group or a butyl group, and a good number of slaves can be used. 5> These bases can be chain-like or branched, and can be replaced by hydrogen: It is a fluorine atom or the like. Examples of the aromatic group include a phenyl group, a decyl group, a methyl group, a ethyl group, a chlorophenyl group, a bromophenyl group, and a fluorophenyl group. Dilute base system = for example: ethylene group, acryl group, 3-butyl group, 3_戍 disaccharide base. Specific examples of the compound 1 include, for example, methyltrimethoxy ketone, methyltriethoxy hydroxy, methyltri-n-propoxy fluorite, shishixixue, methyltri-n-butoxide, and =milk-based velvet Diterpene-fluorene-butane-rolled decane, dimethylbutanyl decane, triphenyloxydecane, ethyltrimethoxy 97104568 13 200848451 decane, ethyltriethoxydecane, ethyltri-n-propoxy decane, Ethyl triisopropoxy decane, ethyl tri-n-butoxy decane, ethyl tri-n-butoxy decane, ethyl tri-tert-butoxy decane, ethyl triphenoxy decane, n-propyl: Trimethoxy decane, n-propyl triethoxy decane, n-propyl tri-n-propoxy, decane, n-propyl triisopropoxy decane, n-propyl tri-n-butoxy decane, n-propyl Second butoxy decane, n-propyl tri-t-butoxy decane, n-propyl triphenoxy decane, isopropyl tridecyloxydecane, isopropyl triethoxy decane, isopropyl tri-n-butyl Propoxy decane, isopropyl triisopropoxy decyl, isopropyl tri-n-butoxy decane, isopropyl tri-n-butoxy decane, isopropyl tri-third Butoxy decane, isopropyl triphenoxy decane, n-butyl trimethoxy decane, n-butyl triethoxy decane, n-butyl tri-n-propoxy decane, n-butyl triisopropoxy decane , n-butyl tri-n-butoxy decane, n-butyl tri-butoxy decane, n-butyl tri-butoxy decane, n-butyl triphenoxy decane, second butyl tridecyloxy Decane, second butyl triethoxy decane, second butyl tri-n-propoxy decane, second butyl, triisopropoxy decane, second butyl tri-n-butoxy decane, second butyl Three \ ^ second butoxy decane, second butyl tri-tert-butoxy decane, second butyl tri phenoxy zebra, third butyl tridecyl oxy-stone, third butyl triethyl Oxydecane, tert-butyltri-n-propoxydecane, tert-butyltriisopropoxy; decane, t-butyltri-n-butoxydecane, tert-butyltris-tert-butoxydecane, Tert-butyltris-tert-butoxydecane, tert-butyltriphenoxydecane, phenyltrimethoxyoxydecane, phenyltriethoxydecane, phenyltri-n-propoxydecane, phenyl Isopropoxydecane, phenyltri-n-butoxydecane, phenyltri-n-butoxydecane, phenyltri-tert-butoxydecane, phenyl tri-97104568 14 200848451 phenoxydecane, dimethyldiene Methoxy decane, dimethyl diethoxy decane, dimethyl di-n-propoxy decane, dimethyl diisopropoxy decane, dimethyl di-n-butoxy decane, dimercapto 2 Butoxy decane, dimercapto 'di-t-butoxy decane, dinonyldiphenoxydecane, diethyldioxime, hydrazine, diethyldiethoxy oxime, diethyl Di-n-propoxy decane, diethyldiisopropoxy chopping, diethyldi-n-butoxy pulverization, diethyldi-butoxybutane, diethyldi-t-butoxydecane , diethyldiphenoxydecane, di-n-propyldimethoxydecane, di-n-propyldiethoxy decane, di-n-propyldi-n-propoxy decane, di-n-propyldiisopropyloxide Base decane, di-n-propyldi-n-butoxy decane, di-n-propyldi-second butoxy decane, di-n-propyldi-t-butoxy decane, di-n-propyldiphenoxydecane, Isopropyl dimethoxy decane, diisopropyl diethoxy decane, diisopropyl di-n-propoxy decane, diisopropyl diisopropoxy decane, diisopropyl di-n-butoxy Decane, diisopropyldi-2-butoxydecane, diisopropyldibutoxybutane, diisopropyldiphenoxydecane, di-n-butyl-dimethoxydecane, di-n-butyl Diethoxy decane, di-n-butyl di-n-propoxy oxazepine, di-n-butyl diisopropoxy zebra, di-n-butyl di-n-butoxy decane, di-n-butyl bis-second Oxydecane, di-n-butyldi-tert-butoxydecane, di-n-butyldiphenoxydecane, di-tert-butyldimethoxyoxydecane, di-tert-butyldiethoxydecane, dip Dibutyldi-n-propoxy decane, di-second butyl diisopropoxy decane, di-second butyl di-n-butoxy decane, di-second butyl di-butoxy decane, second Butyl di-butoxy decane, di-tert-butyl diphenoxy decane, di-t-butyl dimethoxy decane, di-t-butyl diethoxy decane, di-tert-butyl two 97104568 15 200848451 n-propoxy oxazepine, di-tert-butyl-iso-propoxy oxalate, di-tert-butyl = butyl-based I, di-t-butyldi- 2,2-butoxy, and second: two? Tributoxy decane, di-tert-butyldiphenoxydecane, diphenyldioxy-7, diphenyldiethoxy #烧, diphenyldi-n-propoxy-2-phenyl-isopropyl Oxygen zephyr, diphenyldi-n-butoxy oxalate, diphenyldi-second butoxy decane, diphenyldi-t-butoxybutylidene-based diphenoxylate. These may be used alone or in combination of two or more. The special compound of corpse 2:1 may, for example, be methyltrimethoxy quinone dioxime: tert-butyl sulphate, methyl tri-n-propoxy sulphate, methyl triisoethyltrimethoxy Base stone simmering, ethyl triethoxy sulphur, benzene,: A = money, phenyl triethoxy money, dimethyl dimethoxyethane = bis-diethoxy sulphur, diethyl dimethoxy The base stone Xixuan, the diethyl di-n=yuan, the phenyl dimethoxy zebao, the diphenyl diethoxy shi shi, the 4 series can be used alone or in combination of two or more. 1 1· 2·Compound 2 In the above general formula (2), the monovalent 嫱 π gamma of R 2 is represented by the same group as R and R 1 of the formula (1). + For example, specific examples of the above-mentioned chemical substance 2 include, for example, tetramethoxy money, tetrakis stone garden, tetra-n-propoxy zephyr, tetraisopropoxy zebra, tetra-n-butoxy group, and the like. Examples of the tetrabutoxy (tetra), tetra-t-butoxy-alkaline, and tetraphenoxy 2 bis compounds include tetramethoxy zebra and tetraethyl ketone. These may be used alone or in combination of two types to 97104568. The ones exemplified in R1 are the same base. • In the general formula (3), the compound 3 in which d=0 is exemplified by hexamethoxy-dioxane, hexaethoxydioxane, hexaphenoxydioxane, and 2-pentamethoxy-2. -methyldioxane, 1,1,1,2,2-pentaethoxy-2-methyldioxane, 1,1,1,2,2,5-pentaoxy-2-indenyldioxane, Ll J 2 2-pentamethoxy-2-ethyldioxane, 1,1,1,2,2-pentaethoxy-2-ethylidene, 1,1,1,2, 2- Pentaphenoxy-2-ethyldioxane, lij 2 2 -pentamethoxy-2-phenyldioxane, 1,M,2, 2,5-ethoxy-2-phenylene chopped, 1 1,1'2,2-penta-oxy-2-phenyldicarbonate, 1 1 2 2-tetradecyloxy-1,2-dimercaptodioxane, 1,1,2, 2- Tetraethoxy-!, 2, 2-indenyl group, a chopping, -tetraphenoxy-1,2-diindenyl, 2,1,2,2-tetramethoxy-1,2 -diethyldioxane, lu,2-tetraethoxy-1,2-diethyl-anthracene, 1,1,2,2-tetraphenoxyl,2-diethyldi(, Shi Xizhuo, 1,1,2,2-tetradecyloxy~1,2-diphenyl bismuth, i,i,2,2-tetraethoxy-1,2 a base ^ One second burn, 1,1,2,2-tetraphenoxy-1,2-diphenyldioxane, 1,1,2-trimethoxy-1,2,2-trimethyldioxane, 1 , 1,2-triethoxy-1,2,2-trimethyldioxane, ι,ι,2-triphenyloxy•-1,2,2-dimethyl-cyan, 1,1 ,2-trimethoxy-;[,2,2-triethyl bismuth, 1,1,2-diethoxy_1,2,2-triethyl bismuth, 1,1 ,2-triphenoxy-1,2,2-triethyldioxane, i 1, trimethoxy-1,2,2-triphenyldioxane, 1,1,2-triethoxy- 1,2, triphenyldioxane, 1,1,2-triphenoxy-1,2,2-triphenyldioxane, 1,2-dimethoxy 97104568 17 200848451 -1,1' 2, 2-tetradecyldioxane q'2-diethoxytetramethyl-decane, 1,2-diphenoxy-;, L 2, 2-tetradecyldioxane, I 2_ II曱oxy-1,1,2,2-tetraethyl bismuth, 1>2, diethoxy", ^2-tetraethyl-stone, 1,2-diphenoxy- , I 2, 2 -tetraethyl oxalate, 1,2-monomethoxy-; [, l 2, 2 - tetraphenyl dioxane, l 2 - diethoxy-1, 1, 2 , 2-tetraphenyl dioxane, 1 2_Diphenyl gas group_1, 1,22_tetraphenyldioxane, etc. Among these, it is preferably, for example, hexamethoxydioxane or hexaethoxydioxane: U, 2, 2- Tetramethoxy-1,2-dimercaptodioxane, 1,1,2,2-tetraethoxy-1,2-dimethyldioxane; [,12,2-tetramethoxy- I 〗 〖 笨 矽 矽 矽 、, 1,2 曱 曱 曱 ;; [, kg, 2, 4-tetradecyldioxane, 1,2-ethoxyl-, ι, 2, 2-tetra Dioxadecane, l 2 -dioxyloxy 1,1,2,2-tetraphenyldioxane, 1,2-diethoxy-u, 2, tetraphenyl-cracked, and the like. Further, in the general formula (3), the compound 3 of d = 1 may, for example, be bis(trimethoxydecyl)decane, bis(triethoxydecyl)decane or bis(tri-n-propyl) Oxyalkylene) decane, bis(triisopropoxydecyl)methane, bis(tri-n-butoxydecyl)decane, bis(tri-t-butoxydecyl)decane, bis (two) Tertiary butoxyalkyl)methane, 1,2-bis(trimethoxydecylalkyl) • phenylene, anthracene, 2-bis(triethoxydecyl)ethane, 1,2-double (three N-propoxy: fluorenyl) ethane, 1,2-bis(triisopropoxydecyl)ethane, hydrazine, 2-bis(tri-n-butoxydecyl)ethane, 12-bis (three Second butoxyalkylalkyl)ethane, 1,2-bis(tris-tert-butoxydecyl)ethane, iododimethoxycarbazide-1 -(trimethoxy-stone) )Methyl, 1-(diethoxymethyl 97104568 18 200848451 decyl)-1-(triethoxydecyl)decane, 1-(di-n-propoxymethylcarbazide-(tri-n-propyl) Oxygen-based sulphur-based, 1-(diisopropoxy oxetane -1 -(triisopropoxydecyl)methane, 1-(di-n-butoxymethylcarbazide:alkyl)_1 -(tri-n-butoxydecylalkyl)decane, 1-(second second Butoxy-alkyl-alkyl)-1-(di-di-butoxy-oxanyl)-methyl, 1-(di-t-butoxy-methoxyalkyl)-1 -(tris-tert-butoxyalkyl) ) decane, 1-(dimethoxycarbamoyl)-2-(trimethoxydecyl)ethane, 1 (diethoxymethyl decyl)-2-(diethoxy chopping) Ethyl bromide, 1-(di-n-propoxy oxindole (alkyl)-2-(tri-n-propoxy oxalate)-ethyl bromide, 1-(diisopropoxydecyl)-2- (triisopropoxydecyl)ethane, i-(di-n-butoxymethylcarbenyl)-2-(tri-n-butoxyfluorenyl)ethane, ι-(di-second butoxide Benzyl hydrazino)-2-(tris-2-butoxy decyl)ethane, iota-(di-t-butoxy decyl)-2-(tri-tert-butoxy decyl) ethane , bis(dimethoxycarbinyl)methane, bis(diethoxydecyl)methane, bis(di-n-propoxymethyl decyl)methane, bis ( Isopropoxymethyl sulfonyl)methane, G bis(di-n-butoxymethyl decyl)methane, bis(di-butoxycarbonylmethyl)methane, bis(di-t-butoxymethyl decyl) Methane, bis(dimethoxycarbinyl)ethane, 1,2-bis(diethoxycarbamido)ethane, 1,2-bis(di-n-propoxymethylcarbenyl) Ethane, I?-le-carbyl)ethane, hydrazine, 2-bis(di-n-butoxymethyl decyl)ethane, 1,2 -; bis(a second butoxymethyl decyl) Ethane, 1,2-bis(di-t-butoxycarbenyl)ethane, 1,2-bis(trimethoxydecyl)benzene, anthracene, 2-bis(2-ethoxydecyl)benzene , 丨, 2 - bis(tri-n-propoxy decyl) benzene, hydrazine, 2 bis (triisopropoxy oxymethylene) benzene, U-bis (tri-n-butoxy decyl) 97104568 19 200848451 1,2-bis(tris-2-butoxydecyl)benzene, anthracene, 2-bis(tris-tert-butoxyalkyl)benzene, anthracene, 3-bis(tridecyloxydecyl)benzene,丨, 3 - bis (triethoxy decyl) benzene, hydrazine, 3 - double (three positive Benzene, hydrazine, bis (triisopropoxy decyl) benzene, 1,3-bis(tri-n-butoxy decyl) benzene, hydrazine, 3-bis (three second butoxide) Base alkyl)benzene, 1,3-bis(tris-tert-butoxyalkyl)benzene, anthracene, 4-bis(trimethoxyoxyalkyl)benzene, anthracene, 4-bis(triethoxydecylalkyl) Benzene, anthracene, 4-bis(tri-n-propoxydecyl)benzene, anthracene, 4-bis(triisopropoxydecyl)benzene, anthracene, 4-bis(tri-n-butoxydecyl)benzene , 1,4-bis(tris-2-butoxyalkyl)benzene, anthracene, 4-bis(tris-tert-butoxyalkyl)benzene, and the like. Among the preferred examples are: bis(trimethoxydecylalkyl)decane, bis(diethoxydecyl)decane, 1,2-bis(tridecyloxydecyl)ethane, 1,2 bis(diethoxy sulphide) ethene, 1 (dimethoxy phthalocyanine)-1 - (trimethoxy decyl) decane, 1 - (diethoxy)曱矽alkyl)-1 -(diethoxy oxalate) oxime, 1 (dimethoxy oxime oxime I; base) 1-2 (dimethoxy oxime), E-burning, 1 -(diethoxysulfonyl)-2-(diethoxydecyl)ethane, bis(dimethoxydecylalkyl) oxime, bis(diethoxymethylcarbazide) Strontium, 1,2-bis(dimethoxymethylhydrazine) ethane, 1,2-bis(diethoxydecyl)ethane, hydrazine, 2 bis: (dimethoxy sulphur Burning base) benzene, 1,2-bis(triethoxy sulphur) benzene, 1,3-: bis (dimethoxy sulphur) benzene, 1,3-bis (triethoxy oxime) Base) benzene, 1,4-bis(trimethoxydecyl)benzene, iota, bis(triethoxydecyl)benzene, and the like. The above compound 3 may be used singly or in combination of two or more. 97104568 20 200848451 L 2. (B) Component As described above, the component (B) is a hydrolyzable polycarbene. The component (B) is π, +, . . . Ν 聚 A polycarbodecane compound having the structural unit represented by the following general formula (4) (hereinafter referred to as "compound 4"). [Chemical 2]

⑷ f (式中,R8係指選摆白_店ν ^ 擇自虱原子、鹵原子、羥基、烷氧基、 酿乳基、石蔷酸基、甲石至缺# 丰 八虹暴甲石只酸基、三敦甲磺酸基、烧基、芳香 二不烯丙基及環氧丙基所構成群組的基;r9係指選擇 原子、羥基、烷氧基、醯董其 甲續酸基、烧基、芳香::丙:”,酸基、三氟 的基;η"係相同^ s 氣丙基所構成群組 ’、问或互異,表示選擇自鹵原子、羥基、 烧氧基、醯氧基、石黃酸基 數Μ的燒基、芳香二丙甲,氟甲績酸基、碳 中的基;m相同% 2 環氧丙基所構成群組 ,、同或互異,表示取代或非取代的亞甲 基、伸炫基、伸稀基、伸块基 指〇〜ι〇,_的數值,且、、u ^方基,x y、z分別係 卜、十、一如〜足5<x+y+z<i〇,_的條件。) 上述般式(4)中,R8〜r11# - 4 = 原子、氯原子、、、二上:齒原子係可舉例如:氟 甲氧基、乙氧基、丙氧基、丁氧基等,疒基:了舉例如: 孔丞寻κ〜R所不醯氧基 97104568 200848451 係可舉例如:乙醯氧基、丙醯氧基等,r8〜r11所示烧基係可 舉例如··甲基、乙基、丙基、丁基、己基、環己基等 所示芳香基係可舉例如:苯基、萘基、甲基苯基、乙基苯 基、氯苯基、溴苯基、氟苯基等。 . 再者’上述一般式⑷中,所示伸烷基係可舉例 如:伸乙基、伸丙基、伸丁基、伸己稀基、癸婦基等,最 好為碳數2~6,該等伸烧基係可為鏈狀、亦可為分枝,更 (可形成環,亦可將氫原子利用諸如氣原子、氯原子、演原 子、蛾原子等鹵原子進行取代。r^rh所示伸烯基係可舉 例如碳數2〜6(最好1〜4)的直鏈或分枝狀之伸烯基,例如: 伸乙烯基、伸丙稀基、伸丁烯基、伸戊烯基、卜T基伸乙 婦基、卜甲基伸丙烯基、2_甲基伸丙烯基、卜甲基伸戊烯 基、3-甲基伸戊烯基小乙基伸乙烯基、卜乙基伸丙稀基、 卜乙基伸丁烯基、3_乙基伸丁烯基等。該等伸稀基中的氫 原子亦可湘諸如氟原子、㈣子、㈣子、硤原子等_ 原子進行取代m示伸炔基係可舉例如碳數2〜^最 好卜4)的直鏈或分枝狀之伸块基,例如:伸乙块基、卜伸 丙块基、1-伸丁炔基、卜伸戊块基、卜伸己块基、2 —伸丁 炔基、2-伸戊炔基、卜甲基伸乙块基、3 一甲基_卜伸丙块 基、3-甲基+伸丁块基等。該等伸块基中的氯原子亦可 利用諸如氟原子、氯原子、演原子、填原子等齒原子進行 取代。R12〜R14所示伸芳基係可舉例如:伸苯基、伸关義等, 氯原子亦可利用諸如氟原子、氯原子、漠^子 鹵原子進行取代。 卞寺 97104568 22 200848451 再者,上述一般式(4)中,χ、y、z係〇〜1〇, 〇〇〇的數值, 且5<x+y + z< 1 0,000。當x+y + z<uf,將有聚合物保存 穩定性差的情況,反之,當1〇,〇〇〇<x+y+z時,所獲得聚 合物將發生層分離現象’無法形成均勻膜。較佳係X、乂、 z 分別為 〇$x$8〇〇、〇gy^5〇〇、〇^d,〇〇〇,更佳 ο(4) f (wherein, R8 is the choice of pendulum white _ shop ν ^ selected from cesium atom, halogen atom, hydroxyl group, alkoxy group, milk base, sulphuric acid base, stone to the lack of #丰八虹暴甲石a group consisting of only an acid group, a trisyl methanesulfonate group, a pyridyl group, an aromatic di-allyl group, and a glycidyl group; r9 means a selected atom, a hydroxyl group, an alkoxy group, a hydrazine group, and an acid group. Burning base, aroma:: C:", acid group, trifluoro group; η" is the same ^ s gas propyl group formed ', ask or mutually different, indicating that selected from halogen atom, hydroxyl group, alkoxy group, a group of a decyloxy group, a fluorene group of a fluorenyl group, an aromatic dipropylamine, a fluoromethyl acid group, a group of carbon; a group of the same m% of an epoxy group; the same or different, indicating a substitution Or unsubstituted methylene, exudyl, dilute base, exudate base finger 〇~ι〇, _ value, and, u ^ square base, xy, z are respectively 卜, 十, 一如如足5<x+y+z<i〇, _ condition.) In the above formula (4), R8~r11# - 4 = atom, chlorine atom, and disulfide: the tooth atom system may be, for example, fluorocarbon Oxyl, ethoxy, propoxy, Oxyl group, etc., thiol group: For example: 丞 丞 κ 〜 R 所 醯 97 97104568 200848451 exemplified by: ethoxylated, propyloxy, etc., r8~r11 Examples of the aromatic group represented by a methyl group, an ethyl group, a propyl group, a butyl group, a hexyl group or a cyclohexyl group include a phenyl group, a naphthyl group, a methylphenyl group, an ethylphenyl group, a chlorophenyl group, and a bromine group. Phenyl, fluorophenyl, etc. Further, in the above general formula (4), the alkylene group may, for example, be an ethyl group, a propyl group, a butyl group, a hexyl group or a sulfonyl group. Preferably, the carbon number is 2-6, and the stretching bases may be chain-shaped or branched, and more may form a ring, and may also utilize a hydrogen atom such as a gas atom, a chlorine atom, an atom, a moth atom. The halogen atom is substituted, and the alkenyl group represented by r^rh may, for example, be a linear or branched alkenyl group having a carbon number of 2 to 6 (preferably 1 to 4), for example, a vinyl group or a vinyl group. Dilute, butenyl, pentenyl, b-based, methyl-propenyl, 2-methyl-propenyl, methyl-pentenyl, 3-methyl-p-pentenyl Vinyl, B a propylene group, a propyl ethyl butyl group, a 3-ethyl butyl group, etc. The hydrogen atoms in the above-mentioned stretching groups may also be substituted with a _ atom such as a fluorine atom, a (tetra), a (tetra), a ruthenium atom or the like. The m-extended alkynyl group may, for example, be a linear or branched exfoliating group having a carbon number of 2 to 4, for example, a stretching group, a stretching group, a 1-butenyl group. , 卜伸戊块基,卜伸己块基, 2—buttydinyl, 2-exetylene group, benzyl group, 3 methyl group, 3-methyl group Butyl group, etc. The chlorine atom in the extended block group may also be substituted by a tooth atom such as a fluorine atom, a chlorine atom, a hydrazine atom, a filled atom, etc. The aryl group represented by R12 to R14 may, for example, be a benzene extending benzene. The chlorine atom can also be substituted with a halogen atom such as a fluorine atom, a chlorine atom or a molybdenum atom.卞寺 97104568 22 200848451 Furthermore, in the above general formula (4), χ, y, z are 〇~1〇, the value of 〇〇〇, and 5<x+y + z<1 0,000. When x+y + z<uf, there will be a case where the polymer has poor storage stability. On the contrary, when 1〇, 〇〇〇<x+y+z, the obtained polymer will undergo layer separation phenomenon. membrane. Preferably, X, 乂, and z are respectively 〇$x$8〇〇, 〇gy^5〇〇, 〇^d, 〇〇〇, preferably ο

Sx$ 500、〇^y^3〇〇、0$zg 500,再更佳 〇^χ^ι〇〇、 0$y$50、osdoo 〇Sx$ 500, 〇^y^3〇〇, 0$zg 500, and even better 〇^χ^ι〇〇, 0$y$50, osdoo 〇

再者,上述一般式(4)中 佳5< x + y + z< 5〇〇,再更佳 < 100 〇 ,較佳 5< x+y + z< 1,〇〇〇,更 5<X + y + z< 250’特佳 5<x + y + z 化合物4係可使選擇自諸如:氯甲基三氯矽烷、漠甲基 ,氣石夕烧、氣f基甲基:氯料、氯f基乙基二氯石夕燒、 氯甲基乙烯基二氯我、氯甲基苯基二氣料、溴甲基甲 基二氯錢m乙稀基二氯我、氯甲基二曱基氯石夕 烧、氣甲基二乙烯基氣石夕烧、漠甲基二甲基氣石夕烧、(卜 氯乙基)三氯矽烷、(1-氯丙基)三氯矽烷、氯甲基三甲氧 基矽烷、溴甲基三甲氧基矽烷、氯甲基甲基二甲氧基矽 烧、乳甲基乙稀基二甲氧基石夕烧、氯f基苯基二甲氧基石夕 烧、漠甲基甲基二甲氧基我、漠甲基乙烯基二甲氧基石夕 烷、溴甲基苯基二甲氧基矽烷、氯甲基二甲基甲氧基矽 烷、乳甲基二乙烯基甲氧基矽烷、氯甲基二苯基甲氧基矽 烷、?甲基二甲基甲氧基矽烷、漠甲基二異丙基甲氧基矽 烧、虱甲基三乙氧基㈣、演甲基三乙氧基石找、氯甲基 甲基一乙氧基石夕烧、氯甲基乙基:乙氧基石夕烧、氯甲基乙 97104568 23 200848451 =基二乙氧基錢、氯甲基苯基二乙氧基錢、溴甲基甲 ^-乙减錢、漠甲基乙稀基二乙氧基錢、溴甲基苯 匕乙:基石夕燒、氯甲基二甲基乙氧基石夕燒、氯甲基二乙 氧土夕燒、/臭甲基二乙烯基乙氧基矽燒、氯甲基三異 丙氧基錢及演甲基三異丙氧基石夕烧等之中的至少i種 化合物,在驗金屬與驗土族金屬中至少—者存在下進行反 j ’視需要更利用醇、有機酸、還原劑等施行處理便可獲 得。 (B:成分的重量平均分子量最好3〇〇〜1〇〇,_,尤以 /00為佳。若(B)成分的重量平均分子量大於該範 圍,便容易生絲子’且使精獲得切之聚合物所形成 的二乳化㈣臈内部的細孔較容易變為過大,因而最好避 1· 3· (A)成分與(B)成分的使用量 t 本實施形態的含矽之聚合物之合成方法+,第1液係水 解㈣烧化合物最好含有(A)成分與⑻成分。此情況,(A) 成分與(B)成分的混合比,係相對於⑻成分的完全水解縮 口物1〇0重1份,較佳(A)成分為1〜1000重量份,更卢 5~2〇〇重量份’再更佳5〜1〇〇重量份為佳。若(a)成分^ 滿1重讀時’將有膜形成後無法表現出充分耐藥性的情 況’反之’若超過丨_重量份,财無法達成膜低介電 係數化的情況。 1· 4. (C)觸媒 (C)觸媒係含於第2液中。⑹觸媒最好係從驗性化合 97104568 24 200848451 物、酸性化合物、及金屬螯合化合物中至少選擇1種的化 合物。 1·4· 1·金屬螯合化合物 可使用為(C)觸媒的金屬螯合化合物係下述一般式(6) • 所示。 R15eM(〇R16)f.e ······ (6) (式中’ R15係指螯合劑;Μ係指金屬原子;R16係指烷基、 或芳香基;f係指金屬M的原子價;e係指1〜f 〇的整數。) 其中’金屬Μ較佳為選擇自第ιπβ族金屬(鋁、鎵、銦、 鉈)及第IVA族金屬(鈦、锆、铪)之至少i種金屬,尤以 鈦、鋁、鍅為佳。此外,所示之烷基或芳香基係可舉例 如上述一般式(丨)中Ri所示的烷基或芳香基。Further, in the above general formula (4), preferably 5 < x + y + z < 5 〇〇, more preferably < 100 〇, preferably 5 < x + y + z < 1, 〇〇〇, more 5 < X + y + z < 250 'Special 5 < x + y + z Compound 4 can be selected from, for example, chloromethyltrichloromethane, methane methyl, gas stone, gas, f-methyl, chlorine , chloro-f-ethyl chlorite, chloromethyl vinyl dichloride, chloromethyl phenyl diethylene, bromomethyl methyl dichloromethane, ethylene dichloride, chloromethyl曱 氯 氯 夕 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Chloromethyltrimethoxydecane, bromomethyltrimethoxydecane, chloromethylmethyldimethoxysulfonium, milk methylethylenedimethoxycarbazide, chlorof-phenyl phenyldimethoxylate Xishao, Mo Methyl-Dimethoxy-I, Mo-methylvinyldimethoxy-naphthene, Bromomethylphenyldimethoxydecane, Chloromethyldimethylmethoxydecane, Milk Armor Divinyl methoxy decane, chloromethyl diphenyl methoxy hydrazine ,? Methyl dimethyl methoxy decane, methylene methyl diisopropyl methoxy oxime, hydrazine methyl triethoxy (tetra), methyl triethoxy stone, chloromethyl methyl ethoxylate Xishou, chloromethylethyl: ethoxylate, chloromethyl B 97104568 23 200848451 = bis ethoxy money, chloromethyl phenyl diethoxy money, bromomethyl methyl - B , methyl methyl diphenyl diethoxy money, bromomethyl benzoquinone B: keshi Xizhuo, chloromethyl dimethyl ethoxylate, chloromethyl diethoxy sulphur, / stinking methyl At least one compound of divinyl ethoxy oxime, chloromethyl triisopropoxy ketone, and methyl triisopropoxy zebra, at least one of the metal and the soil of the soil tester The anti-j' can be obtained by using an alcohol, an organic acid, a reducing agent or the like as needed. (B: The weight average molecular weight of the component is preferably 3 〇〇 1 〇〇, _, especially preferably / 00. If the weight average molecular weight of the component (B) is larger than the range, the raw silk is easily made and the fine is cut. The pores inside the diemulsified (tetra) oxime formed by the polymer tend to become too large, so it is preferable to avoid the use amount of the component (B) and the component (B). The synthesis method +, the first liquid hydrolysis (four) fired compound preferably contains the components (A) and (8). In this case, the mixing ratio of the component (A) to the component (B) is a complete hydrolysis of the component (8). The content of 1 〇 0 is 1 part by weight, preferably (A) is 1 to 1000 parts by weight, more preferably 5 to 2 parts by weight, and even more preferably 5 to 1 part by weight. If (a) component ^ When the 1st rereading is completed, 'there will be no sufficient resistance after the film formation. The other way, if it exceeds 丨_parts by weight, the film may not reach the low dielectric constant of the film. 1· 4. (C) Catalyst (C) The catalyst is contained in the second liquid. (6) The catalyst is preferably at least one of the compounds, the acidic compound, and the metal chelate compound. One type of compound is selected. 1·4·1· Metal Chelate Compound The metal chelate compound which is (C) catalyst can be used as shown in the following general formula (6) • R15eM(〇R16)fe ··· (6) (wherein R15 means a chelating agent; lanthanum means a metal atom; R16 means an alkyl group or an aryl group; f means the valence of the metal M; and e means an integer of 1 to f 〇 Wherein the 'metal ruthenium is preferably at least one metal selected from the group ππβ group metals (aluminum, gallium, indium, antimony) and the Group IVA metal (titanium, zirconium, hafnium), especially titanium, aluminum, and antimony. Further, the alkyl group or the aromatic group shown may, for example, be an alkyl group or an aromatic group represented by Ri in the above general formula (丨).

金屬螯合化合物的具體例係可舉例如:三乙氧基•單(乙 醯基丙g同)鈦、三正丙氧基•單(乙酿基丙酮)欽、三異丙 氧基:,(乙醯基丙酮)鈦、三正丁氧基•單(乙醯基丙酮) 鈦、三第二丁氧基•單(乙醯基丙酮)鈦、三第三丁氧基· 單(乙醯基丙g同)鈦、二乙氧基•雙(乙醯基丙嗣)欽、:正 丙氧基•雙(乙《丙酮)鈦、二異丙氧基•雙(乙醯基丙 酮)鈦、二正丁氧基•雙(乙醯基丙酮)鈦、二第二丁氧基· ί (乙,基丙酮)鈦、-第三丁氧基·雙(乙醯基丙酮、 早乙氧基·參(乙醯基丙酮)鈦、單正丙氧基·參(乙醯基 丙鲷)鈦、單異丙氧基•參(乙醯基丙酮)鈦、單正丁氧基· 參(乙醯基丙酮)鈦、輩—筮——Γ Ά / 早弟一丁虱基•苓(乙醯基丙酮)鈦、 97104568 25 200848451 單-第三丁氧基•參(乙醯基丙酮)鈦、肆(乙醯基丙酮)鈦、 二乙氧基•早(乙基乙酿醋酸)欽、三正丙氧基·單(乙基 乙醯醋酸)鈦、三異丙氧基•單(乙基乙醯醋酸)鈦、三正 丁氧基•單(乙基乙醯醋酸)鈦、三第二丁氧基•單(乙基 乙醯醋酸)鈦、三第三丁氧基•單(乙基乙醯醋酸)鈦、二 乙氧基•雙(乙基乙醯醋酸)鈦、二正丙氧基•雙(乙基乙 醯醋酸)鈦、二異丙氧基•雙(乙基乙醯醋酸)鈦、二正丁 氧基•雙(乙基乙醯醋酸)鈦、二第二丁氧基•雙(乙基乙 c醯醋酸)鈦、二第三丁氧基•雙(乙基乙醯醋酸)鈦、單乙 氧基•三(乙基乙醯醋酸)鈦、單正丙氧基•參(乙基乙醯 醋酸)鈦、單異丙氧基•參(乙基乙醯醋酸)鈦、單正丁氧 基•茶(乙基乙醯醋酸)鈦、單-第二丁氧基•參(乙基乙醯 醋酸)鈦、單-第三丁氧基•參(乙基乙醯醋酸)鈦、肆 基乙醯醋酸)鈦、單(乙醯基丙綱)參(乙基乙釀醋酸)欽、 雙(乙醯基丙酮)雙(乙基乙醯醋酸)鈦、參(乙醯基丙酮) G早(乙基乙醯醋酸)鈦等鈦螯合化合物;三乙氧基 酗基丙酮)錯、三正丙氧基•單(乙酿基丙酮)錯、三里丙 ”乙醯基丙,)锆、三正丁氧基·單(乙醯基丙酮) ^二丁氧基•單(乙酿基丙酮)|#、三第三丁氧基· 早(乙酉&基丙g同)錯、-己氦| —乙虱基•雙(乙醯基丙酮)錯、二正 羊土 ·又(乙醯基丙酮)鍅、二異 酮)锆、二正丁氣美•雔又(οι暴丙 土 又(乙酉迪基丙輞)錯、二第二 · 雙(乙醯基丙g同)鍅、二箆二 # 土 m . A ., —弟二丁虱基•雙(乙醯基丙酮)銼、 早乙虱基•參(乙醯基丙酮)鍅、 早正丙虱基•芩(乙醯基 97104568 26 200848451 丙酮)釔、單異丙氧基•參(乙醯基丙酮)錯、單正丁氧美· 酿基丙酮)鍅、單-第二丁氧基·參(乙酸基丙嗣)錯、 •第^ 丁氧基•參(乙醯基丙酮)鍅、肆(乙醯基丙酮)^、 一乙氧基•單(乙基乙醯醋酸)錯、三正丙氧基· - 乙醯醋酸)锆、三里而童其· 甘 早(乙基 匕 —一丙乳基單(乙基乙醯醋酸)鍅、三正 氧土單(乙基乙酸醋酸)錯、三第二丁氧基•單(乙美 乙醯醋酸)結、三第三丁氧基·單(乙基乙酸醋酸)錯、: p =乳基•雙(乙基乙醯醋酸)鍅、二正丙氧基•雙(乙基乙 ^酉文)錯、二異丙氧基•雙(乙基乙醯醋酸)锆、二正丁 氧基•雙(乙基乙醯醋酸)锆、二第二丁氧基•雙(乙基乙 ,酉B酉夂)錯、二第三丁氧基•雙(乙基乙醯醋酸)錯、單乙 氧基•參(乙基乙醯醋酸)錯、單正丙氧基•參(乙基乙醯 醋酸)錯、單異丙氧基•參(乙基乙醯醋酸)鍅、單正丁氧 基•參(乙基乙醯醋酸)鍅、單-第二丁氧基•參(乙基乙醯 醋酸)錯、單—第三丁氧基•參(乙基乙醯醋酸)錯、肆(乙 基乙ga酉文)錯、單(乙醯基丙酮)參(乙基乙酸醋酸)鍅、 ^ (乙酿基丙酮)雙(乙基乙醯醋酸)錯、參(乙醯基丙嗣) 單(乙基乙醯醋酸)鍅等锆螯合化合物;三乙氧基•單(乙 醯基丙酮)鋁、三正丙氧基•單(乙醯基丙明)鋁、三異丙 乳基=單(乙醯基丙酮)鋁、三正丁氧基•單(乙醯基丙酮) 鋁、二第二丁氧基•單(乙醯基丙酮)鋁、三第三丁氧基· 單(乙醯基丙酮)鋁、二乙氧基•雙(乙醯基丙酮)鋁、二正 丙氧基•雙(乙醯基丙酮)鋁、二異丙氧基•雙(乙醯基丙 _)銘一正丁氧基•雙(乙醯基丙酮)紹、二第二丁氧基· 97104568 27 200848451 雙(乙醯基丙酮)鋁、二第三丁氧基•雙(乙醯基丙酮)鋁、 單乙氧基•參(乙醯基丙酮)鋁、單正丙氧基•參(乙醯基 丙酮)鋁、單異丙氧基•參(乙醯基丙酮)鋁、單正丁氧基· 參(乙醯基丙酮)鋁、單—第二丁氧基•參(乙醯基丙酮)鋁、 • 單—第二丁氧基•參(乙醯基丙酮)銘、肆(乙醯基丙g同)銘、 二乙氧基•單(乙基乙贐醋酸)紹、三正丙氧基•單(乙基 乙醯醋酸)鋁、三異丙氧基•單(乙基乙醯醋酸)鋁、三正 丁氧基•單(乙基乙醯醋酸)鋁、三第二丁氧基•單(乙基 f 乙醯醋酸)鋁、三第三丁氧基•單(乙基乙醯醋酸)鋁、二 乙氧基•雙(乙基乙醯醋酸)1呂、二正丙氧基•雙(乙基乙 醯醋酸)鋁、二異丙氧基•雙(乙基乙醯醋酸)鋁、二正丁 氧基•雙(乙基乙醯醋酸)鋁、二第二丁氧基•雙(乙基乙 酸醋酸)銘、二第三丁氧基•雙(乙基乙隨醋酸)鋁、單乙 氧基•參(乙基乙醯醋酸)鋁、單正丙氧基•參(乙基乙醯 醋酸)鋁、單異丙氧基•參(乙基乙醯醋酸)鋁、單正丁氧 〇基•參(乙基乙醯醋酸)鋁、單-第二丁氧基•參(乙基乙醯 醋酸)鋁、單-第三丁氧基•參(乙基乙醯醋酸)鋁、肆(乙 基乙醯醋酸)鋁、單(乙醯基丙酮)參(乙基乙醯醋酸)鋁、 雙(乙醯基丙酮)雙(乙基乙醯醋酸)鋁、參(乙醯基丙酮) : 單(乙基乙醯醋酸)鋁等鋁螯合化合物等等之1種或2種以 特別以使用諸如:(CH3(CH3)HC0)4-tTi(CH3C0CH2C0CH3)t、 (CH3(CH3)HC0)4-tTi(CH3C0CH2C00C2H5)t > (C4H9〇)4-tTi(CH3COCH2COCH3)t ^ (C4H90)4-tTi(CH3C0CH2C00C2H5)t、(C2H5(CH3)C0)Wri(CH3C0CH2C0CH3)t、 97104568 28 200848451 (C2H5(CH3)C0)4-tTi(CH3C0CH2C00C2H5)t > (CH3(CH3)HC0)4-tZr(CH3C0CH2C0CH3)t > (CH3(CH3)HC0)4-tZr(CH3C0CH2C00C2H5)t、(C4H90)4-tZr(CH3C0CH2C0CH3)t、 (C4H90)4tZr(CH3C0CH2C00C2H5)t、(C2H5(CH3)C0)4-tZr(CH3C0CH2C0CH3)t、 6 (C2H5(CH3)CO)4-tZr(CH3COCH2COOC2H5)t > (CH3(CH3)HC0)3-tAl(CH3C0CH2C0CH3)t ^ ,(CH3(CH3)HC0)3-tAl(CH3C0CH2C00C2H5)t > (C4H9〇)3-tAl(CH3COCH2COCH3)t ^ (C4H90)3-tAl(CH3C0CH2C00C2H5)t、(C2H5(CH3)C0)3-tAl(CH3C0CH2C0CH3)t、 (C2H5(CH3)C0)3 tAl(CH3C0CH2C00C2H5)t 等中之 1 種或 2 種以上的金 屬螯合化合物為佳。 ^ 金屬螯合化合物的使用量係相對於水解性矽烷化合物 的總量100重量份(依完全水解縮合物換算計),為 0. 0001〜10重量份,最好0. 00卜5重量份。若金屬螯合化 合物的使用比例未滿0. 0001重量份,將有塗膜塗佈性差 的情況,反之,若超過10重量份,便有無法控制聚合物 成長而將引發凝膠化的情況。 當在金屬螯合化合物存在下,使水解性矽烷化合物進行 # 水解縮合時,最好於水解性矽烷化合物總量每1莫耳中使 用0. 5〜20莫耳的水,尤以添加1〜10莫耳的水為佳。若所 添加的水量未滿0. 5莫耳,將有水解反應未充分地進行, 且塗佈性與保存穩定性出現問題的情況,反之,若超過 20莫耳,將有在水解與縮合反應中發生聚合物析出、凝 膠化的情況。此外,水最好依間歇式或連續式添加。 1.4. 2.酸性化合物 可使用為(C)觸媒的酸性化合物係可例示如有機酸或無 機酸,最好為有機酸。有機酸係可舉例如:醋酸、丙酸、 97104568 29 200848451 丁酸、戊酸、己酸、庚酸、辛酸、壬酸、癸酸、草酸、順 丁烯二酸、甲基丙二酸、己二酸、癸二酸、五倍子酸、丁 •酸、苯六曱酸、花生油酸、莽草酸、2_乙基己酸、油酸、 •硬脂酸、亞麻油酸、次亞麻酸、水揚酸、苯甲酸、p_胺基 •苯曱酸、P-甲苯石黃酸、苯續酸、單氯醋酸、二氯醋酸、三 氯醋酸、三氟醋酸、蟻酸、丙二酸、石黃酸、駄酸、反丁稀 二酸、檸檬酸、酒石酸、順丁烯二酸酐、反丁烯二酸、衣 P康酸、琥珀酸、中康酸、檸康酸、蘋果酸、丙二酸、戊二 ?的水解物、順丁烯二酸酐的水解物、酞酸酐的水解物 1二無機酸係可舉例如:鹽酸、硝酸、硫酸、氫氟酸、磷 -文專/、中就在水解與縮合反應中的聚合物析出、凝谬 化威脅較少之觀點,最好為有機酸,尤以具有羧基的化合 物為佳,更以醋酸、¥酸、順酸、丙二酸、 ^酸、反丁烯二酸、衣康酸、琥珀酸、中康酸、檸康酸、 j果齩丙一酸、戊二酸、順丁烯二酸酐的水解物等有機 S久為4寸仏。该等係可單獨使用1種、亦可同時使用2種以 上。 曰酸性化合物的使用量係相對於水解性矽烷化合物的總 里100重置份(依完全水解縮合物換算計),使用 • · 0001 1 0重里份,最好〇· 〇〇卜5重量份。若酸性化合物 使用里相對於水解性矽烷化合物總量丨00重量份,為未滿 0/ 0001重量份,將有塗膜塗佈性差的情況,反之,若超 過10重1份’水解縮合反應將急遽進行而發生凝膠化的 情況。 97104568 30 200848451 备在酸性化合物存在τ,使水解 縮合時’最好相對於水解性梦炫化合物總ffc:= 亍水解 〇· 5〜20莫耳的波,I 心里母1莫耳使用 加的水量未滿O B: 1〜1〇莫耳的水為佳。若所添 W里未騎5料,將有水解反應未 _ 二性與保存穩定性將出現問題的情況,反之,J超: 〇 4耳,將有在水解與縮合反應中 =況。此外,水最好依間歇式或連續;;物加析出、膠 1· 4· 3·驗性化合物 ▲可使用為(C)觸媒的鹼性化合物係可舉例如. 子胺、丙醇胺、丁醇胺、N-甲基甲醇胺、N_ 卜丙基甲醇胺、N-丁基甲醇胺、"基乙醇胺=乙\胺乙 醇胺、Ν-丙基乙醇胺、Ν_丁基乙醇胺、土乙 乙基丙醇胺、Ν-丙基丙醇胺、Ν_丁 :丙 =基丁一基丁醇胺、二St -甲基甲醇胺、N,N-二乙基甲醇胺、N,N-二丙基甲醇胺、 ,N-一丁基甲醇月安、N,卜二甲基乙醇胺、& n—二 胺、n,n-二丙基乙醇胺、N,N—二丁基乙醇胺= =安、N广二乙基丙醇胺鲁二丙基丙醇胺:二基 一丁基丙%月女、N,N-二甲基丁醇胺、N N一 — 二丙基丁醇胺、u-二丁基丁醇胺、:二 胺、N-乙基二f醇胺、N-丙基二甲醇胺、n_丁基二 N-甲基二乙醇胺、n—乙基二乙醇胺、㈣基二乙醇胺、 丁基二乙醇胺、"基二丙醇胺、N-乙基二丙醇胺、N_ 丙基二丙醇胺、N-丁基二丙醇胺、"基二丁醇胺、^ 97104568 31 200848451 乙基二丁醇胺、丙基二丁醇胺、N__ 丁基二丁醇胺、N—(胺 基甲基)甲醇胺、N-(胺基甲基)乙醇胺、N-(胺基甲基)丙 醇胺、N-(胺基甲基)丁醇胺、N-(胺基乙基)甲醇胺、N—(胺 §基乙基)乙醇胺、N—(胺基乙基)丙醇胺、N-(胺基乙基)丁 ,醇胺、N—(胺基丙基)甲醇胺、N-(胺基丙基)乙醇胺、N-(胺 基丙基)丙醇胺、N-(胺基丙基)丁醇胺、N—(胺基丁基)甲 醇胺、N-(胺基丁基)乙醇胺、N—(胺基丁基)丙醇胺、N—(胺 基丁基)丁醇胺、甲氧基甲胺、甲氧基乙胺、甲氧基丙胺、 甲氧基丁胺、乙氧基甲胺、乙氧基乙胺、乙氧基丙胺、乙 氧基丁胺、丙氧基甲胺、丙氧基乙胺、丙氧基丙胺、丙氧 基丁胺、丁氧基甲胺、丁氧基乙胺、丁氧基丙胺、丁氧基 丁胺、曱胺、乙胺、丙胺、丁胺、N,N一二曱胺、N,N一二乙 胺、N,N-二丙胺、n,N-二丁胺、三曱胺、三乙胺、三丙胺、 二丁胺、氫氧化四曱銨、氫氧化四乙銨、氫氧化四丙銨、 氫氧化四丁銨、四曱基乙二胺、四乙基乙二胺、四丙基乙 ◎二胺、四丁基乙二胺、曱基胺基甲胺、甲基胺基乙胺、曱 基胺基丙胺、曱基胺基丁胺、乙基胺基曱胺、乙基胺基乙 胺、乙基胺基丙胺、乙基胺基丁胺、丙基胺基曱胺、丙基 胺基乙胺、丙基胺基丙胺、丙基胺基丁胺、丁基胺基曱胺、 • 丁基胺基乙胺、丁基胺基丙胺、丁基胺基丁胺、吡啶、吡 ;咯、哌畊、吡咯烷、哌啶、曱基吡啶、嗎啉、曱基嗎啉、 二氮雜雙環辛烷、二氮雜雙環壬烷、二氮雜雙環月桂烯、 氨、氫氧化鈉、氫氧化舒、氫氧化鋇、氫氧化弼等。 鹼性化合物特別以下述一般式(5)所示含氮化合物(以 97104568 32 200848451 下亦稱「化合物5」)為佳。 (X 丨 X2X3X4N)gY ……(5) 上述一般式⑸中,χ1、χ2、χ3、χ4__ 表不虱原子、碳數卜20的燒基(最好為?基、乙基、丙刀基別 3二好為經乙基等)、芳香基(最〜 :二4)、方烷基(最好為苯基甲基等);γ係指齒原子 =為氟原子、氯原子、漠原子、礙原子等)、Η價的降 離子性基(最好為羥基等);g係指!〜4的整數。、π 化5的具體例,較佳例係可舉例如··氫氧化四甲 二虱乳化四乙銨、氫氧化四正丙銨、氫氧化四異丙銨、 虱氣化四正丁銨、氫氧化四異丁録、氫氧化四第三丁録、 =化:f銨、氫氧化四己銨、氫氧化四庚銨、氫氧化四 ―:旦Μ#四壬錢' A氧化十四烧基銨、氫氧化四(十 基)錄、氫氧化四(十二烧基)銨、演化四甲錢、氯化 四f録、演化四乙錢、氯化四乙錢、漠化四正丙銨、氯化 =丙銨”臭化四正丁録、氯化四正丁録、氯氧化十六烷 基^甲銨、演化正十六燒基三甲録、氣氧化正十八烧基三 甲鉍一溴化正十八烷基三甲銨、鯨蠟基三甲基氯化銨、硬 脂基三甲基氯化銨、氯化节基三甲錢、二癸基二甲基氯化 叙、-硬脂基二甲基氯化銨、氯化三癸基甲錢、四丁基硫 酸氫銨、漠化三丁基甲銨、氯化三辛基甲銨、氯化三月桂 基甲錢、氫氧化节基三甲銨、漠化节基三乙銨、漠化节基 二丁銨、溴化苯基三曱銨、膽鹼等。該等之中,特別佳者 有如:氫氧化四曱銨、氫氧化四乙銨、氫氧化四正丙銨、 97104568 33 200848451 氯氧化四正丁銨、溴化四 氯化四乙銨、溴化四正丙銨、氣化四銨、溴化四乙銨、 可單獨使用】種、亦可m士二正丙銨。化合物5係 邳可间時使用2種以上。 驗性化合物的使用量係相對於水解 水解性基總量丨莫耳, 凡化口物中的 0.0_5〜5料。耳村為耳,最好 1 · 5 ·有機溶劑 本實施形態的切之聚合物進行製料,使 化合物溶解於有機溶劑中便可調製得第ι液。 夕疋 :成第1液的較佳有機溶劑係可舉例如 ,、異丙醇、正丁醇、異丁醇、第 予 】醇系溶劑’·乙二醇、丙二醇、1,3-丁二;:2 4. 戊二醇、2-甲基_2,4一戊一醇 a 予Z’4 2-乙基*己二醇、:醇’己二·、2,4_庚二醇、 一品^ 一乙一知、二丙二醇、三乙二醇、 丙一醇4夕謂系溶劑;乙二醇單Μ、乙二醇單乙 南::乙:醇早丙醚、乙二醇單丁醚等多元醇部分醚系溶 :广醚、異丙醚、正丁醚、正己醚、2-乙基己醚、環氧 環氧丙烧、4戊烧、4_甲基4戊燒、二4 :、一甲基二噚烷、乙二醇單甲醚、乙二醇二甲醚、乙二 ::乙醚、乙二醇二乙醚等醚系溶劑;丙嗣、甲基乙酮、 土正丙酮、甲基正丁酮、二乙酮、甲基異丁酮、甲基正 ,同、乙基正丁,、甲基正己酮、二異丁酮、三甲基壬酮、 ,戊酮、環己_、環庚酮、環辛_、2_己_、甲基環己嗣、 ,4-戊二酮、丙_基丙_、二丙酮醇等_系溶劑。此外, 97104568 34 200848451 構成第2溶液的有機溶劑係可 較佳有機溶劑為相同之溶劑。’、α與上述構成第1液的 1· 6.含矽之聚合物 本實施形態的含矽之聚合物 得,碳原子含有率8〜40原子%(最好、照=合成方法所獲 為15〜4.0(最好u〜3 5, 〜2〇原子,且黯/Mn 形態的含石夕之聚合物,因為分辦5動%8為佳)。本實施 情況,且含有既定量的碳原子,因里:當^^^ 的膜形成用組成物進行二氧化 =3±有心合物 L 1 介電常數較低的二氧化石夕系膜。此處: :=4.0’將有產生會對過遽性造成影響的高分子 里體、或產生會阻礙1^值降低的低分子量體之問題。 觸含石夕之聚合物的碳原子含有率(原子%) ’係使在 :r3石夕之艰合物所使用之成分(水解性石夕烧化合物)的 1早性基疋全水解而形成矽醇基,由該生成的矽醇基完全 、、伯口亚形成矽氧烷鍵結時的元素組成進行求取,具體而言 可從下式進行求取。 碳原子的含有率(原子有機二氧化矽溶膠的碳原子 數)/(有機二氧化矽溶膠的總原子數)xl0() 含梦之聚合物的重量平均分子量(Mw)最好為 1,000〜2〇〇,〇〇〇,尤以5,000〜1 50,00()為佳。若含矽之聚 合物的重量平均分子量大於200, 000,將容易發生凝膠化 現象’且所獲得二氧化矽系膜内的細孔容易過大,因而最 好避免。反之,若含矽之聚合物的重量平均分子量小於 97104568 35 200848451 1,〇〇〇,則塗佈性、保存穩定性容易出現問題。 17·作用效果 j本實施形態的切之聚合物之合成方法,藉由包括 有將3有從(A)水解性矽烷單體與(B)水解性聚炉 擇之至少1種水解性矽烷化合物的第1 Λ 、元、 :的第2液中,並使該水解”燒化合: = = : :的步驟’便可獲得抑制巨大粒子的發生、分子量變動較 1’且具有既定碳含量的含矽之聚合物。所以,使用人‘ :含石夕之聚合物之膜形成用組成物所形 ; 數與吸濕性較小,且機械強度與耐藥性均優越。|電吊 2·膜形成用組成物 :::形態的膜形成用組成物,係含有上述Specific examples of the metal chelate compound include, for example, triethoxyl mono(ethylidene propyl g) titanium, tri-n-propoxy-mono(ethyl acetonide), triisopropoxy: (Ethyl acetonide) Titanium, Tri-n-butoxy-mono(ethenylacetone) Titanium, Tri-tert-butoxy-mono(ethinylacetone) Titanium, Tri-tert-butoxy-Single Base, g, and titanium, diethoxy, bis(ethyl fluorenyl), n-propoxy, bis (ethyl "acetone" titanium, diisopropoxy bis (acetyl) acetonide , di-n-butoxy bis(acetylidene acetonide) titanium, two second butoxy ί (b, propyl acetonide) titanium, - third butoxy bis (ethinyl acetonide, early ethoxylate) · ginseng (acetonitrile) titanium, mono-n-propoxy-sodium (ethenyl propyl hydrazine) titanium, monoisopropoxy ginseng (acetyl acetonide) titanium, mono-n-butoxy ginseng (B醯 丙酮 ) ) 钛 辈 辈 辈 早 早 早 早 早 早 早 早 早 早 早 早 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 Acetylacetone) titanium, diethoxy; early ( Ethyl ethyl acetate acetic acid), tri-n-propoxy-single (ethyl acetoacetate) titanium, triisopropoxy-mono (ethyl acetoacetate) titanium, tri-n-butoxy • mono (ethyl Acetate acetic acid) titanium, tri-tert-butoxy-mono(ethylacetamidineacetic acid) titanium, tri-tert-butoxy-mono(ethylacetamidineacetic acid) titanium, diethoxy-bis (ethyl ethyl)醯Acetic acid) Titanium, di-n-propoxy-oxy-bis(ethyl acetoacetate) titanium, diisopropoxy bis (ethyl acetonitrile) titanium, di-n-butoxy bis (ethyl acetamidine acetate) Titanium, di-butoxide, bis(ethylethyl c-acetate) titanium, di-t-butoxy-bis(ethylacetamidineacetic acid) titanium, monoethoxy-tris(ethylacetamidineacetic acid) Titanium, mono-n-propoxy-parameter (ethyl acetoacetate) titanium, monoisopropoxy ginseng (ethyl acetoacetate) titanium, mono-n-butoxy-tea (ethyl acetoacetate) titanium , mono-second butoxy ginseng (ethyl acetoacetate) titanium, mono-tert-butoxy ginseng (ethyl acetoacetate) titanium, decyl acetonitrile acetic acid) titanium, single (ethyl fluorenyl)甲纲) ginseng (ethyl ethyl acetate) , bis(ethyl decyl acetonide) bis (ethyl acetamidine acetate) titanium, ginseng (acetyl acetonide) G early (ethyl acetoacetate) titanium and other titanium chelating compounds; triethoxy fluorenylacetone) , tri-n-propoxy-mono (ethyl acetoacetate), tri-propyl propyl acetonitrile, zirconium, tri-n-butoxy-mono(ethenylacetone) ^ dibutoxy • single Acetone)|#, three third butoxy group (Ethyl hydrazine & propyl propyl) is wrong, - hexyl hydrazine | - ethyl hydrazine / bis (acetyl ketone) wrong, two positive sheep soil · again ( Ethyl acetonide) bismuth, diiso ketone) zirconium, di-n-butyl sulphide 雔 雔 ( ο ο ο 暴 暴 暴 暴 又 又 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ,二箆二#土m . A ., —Didi-diyl bis(ethyl decyl acetonide) 早, 早乙虱基•参(乙醯 acetone)鍅, 早正丙虱基•芩(乙醯基97104568 26 200848451 Acetone) oxime, monoisopropoxy oxy-x (acetamidacetone), mono-n-butoxy-anhydroacetic acid) hydrazine, mono-second butoxy-glycolate , • butyloxy• ginseng (acetoxime)鍅, 肆 (acetonitrile), ethoxy, mono (ethyl acetamidine acetate), tri-n-propoxy--acetamidine acetate, zirconium, Sanli and Tongqi · Ganzao (ethyl hydrazine) - a propyl milk mono (ethyl ethyl hydrazine acetate) hydrazine, tri-n-oxide mono (ethyl acetate acetic acid) wrong, three second butoxy • single (ethyl acetate) acetate, three third oxygen Base · monoethyl acetate (acetic acid acetate),: p = lactyl • bis(ethyl acetamidineacetate) hydrazine, di-n-propoxy bis (ethyl ethyl hydrazine), diisopropoxy Bis(ethylacetamidineacetic acid) zirconium, di-n-butoxy-bis(ethylacetamidineacetic acid) zirconium, two second butoxy-bis(ethyl b, 酉B酉夂), two third Oxy-bis(ethylacetamidineacetic acid), monoethoxy, ginseng (ethylacetamidineacetic acid), mono-n-propoxy, ginseng (ethyl acetoacetate), monoisopropoxy ((ethylacetamidineacetic acid) hydrazine, mono-n-butoxy-para (ethyl acetoacetate) hydrazine, mono-second butoxy-para (ethyl acetoacetate), mono-butadiene Base ginseng (ethyl acetoacetate) wrong, 肆 (B乙乙ga酉文), singly, succinylacetone, succinate (ethyl acetate), ^, ^ (ethylidene acetonide) bis(ethyl acetamidineacetate), ginseng (ethyl hydrazide) Zirconium chelate compound such as (ethylacetamidineacetic acid) ruthenium; triethoxyl mono(ethyl decyl acetonide) aluminum, tri-n-propoxy oxy-mono(ethenyl propylamine) aluminum, triisopropyl acrylate = Single (acetamidacetone) aluminum, tri-n-butoxy-mono(ethenylacetone) aluminum, two second butoxy-mono(ethylideneacetone) aluminum, three third butoxy group (b) Mercaptoacetone) aluminum, diethoxy bis(acetic acetone) aluminum, di-n-propoxy bis(ethyl decyl acetonide) aluminum, diisopropoxy bis (ethyl fluorenyl propyl) a n-butoxy bis(ethyl decyl acetonide), a second butyloxy group 97104568 27 200848451 bis(ethyl decyl acetonate) aluminum, two third butoxy bis (ethyl decyl acetonide ) aluminum, Monoethoxy, ginseng (acetonitrile) aluminum, mono-n-propoxy-x (acetamidacetone) aluminum, monoisopropoxy ginseng (acetonitrile) aluminum, mono-n-butoxy Ginseng (acetylacetone) Aluminum, mono-second butoxy-glycol (acetonitrile) aluminum, • mono-second butoxy • ginseng (acetoxime), 肆 (醯 醯 propyl g) with the second, Ming Oxygen mono (ethyl acetamidine acetate), tri-n-propoxy-single (ethyl acetoacetate) aluminum, triisopropoxy-mono (ethyl acetoacetate) aluminum, tri-n-butoxy • Single (ethyl acetoacetate) aluminum, three second butoxy • mono (ethyl f acetonitrile) aluminum, tri-tert-butoxy • mono(ethyl acetonitrile) aluminum, diethoxy • bis (ethyl acetamidine acetate) 1 ly, di-n-propoxy bis (ethyl acetonitrile) aluminum, diisopropoxy bis (ethyl acetonitrile) aluminum, di-n-butoxy Bis(ethylacetamidineacetate)aluminum,di-second-butoxy-bis(ethylacetate acetate),di-tert-butoxy-bis(ethyl b-acetate)aluminum, monoethoxyl-parameter Ethylacetamidineacetic acid)aluminum, mono-n-propoxy-oxyl (ethyl ethyl acetonitrile), aluminum, monoisopropoxy, ginseng (ethyl acetoacetate), aluminum, mono-n-butoxy-indenyl Ethyl acetate, aluminum, single-second Base ginseng (ethyl acetoacetate) aluminum, mono-tert-butoxy ginseng (ethyl acetoacetate) aluminum, lanthanum (ethyl acetoacetate) aluminum, mono (ethyl acetonide) ginseng (B Acetylacetate, aluminum, bis(ethylideneacetone) bis(ethylacetamidineacetic acid)aluminum, ginseng (acetamidoacetone): aluminum chelate compound such as mono(ethylacetamethyleneacetate)aluminum, etc. Species or 2 in particular for use such as: (CH3(CH3)HC0)4-tTi(CH3C0CH2C0CH3)t, (CH3(CH3)HC0)4-tTi(CH3C0CH2C00C2H5)t > (C4H9〇)4-tTi(CH3COCH2COCH3 ) t ^ (C4H90)4-tTi(CH3C0CH2C00C2H5)t, (C2H5(CH3)C0)Wri(CH3C0CH2C0CH3)t, 97104568 28 200848451 (C2H5(CH3)C0)4-tTi(CH3C0CH2C00C2H5)t > (CH3(CH3) HC0)4-tZr(CH3C0CH2C0CH3)t > (CH3(CH3)HC0)4-tZr(CH3C0CH2C00C2H5)t, (C4H90)4-tZr(CH3C0CH2C0CH3)t, (C4H90)4tZr(CH3C0CH2C00C2H5)t, (C2H5( CH3)C0)4-tZr(CH3C0CH2C0CH3)t,6(C2H5(CH3)CO)4-tZr(CH3COCH2COOC2H5)t > (CH3(CH3)HC0)3-tAl(CH3C0CH2C0CH3)t ^ , (CH3(CH3) HC0)3-tAl(CH3C0CH2C00C2H5)t > (C4H9〇)3-tAl(CH3COCH2COCH3)t ^ (C4H90)3-tAl(CH3C0CH2C00C2H5)t, C2H5 (CH3) C0) 3-tAl (CH3C0CH2C0CH3) t, (C2H5 (CH3) C0) 3 tAl (CH3C0CH2C00C2H5) t like or two or more species of the metal chelate compound is preferred. The amount of the metal chelating compound is from 0.0001 to 10 parts by weight, preferably from 0.000 to 5 parts by weight, based on 100 parts by weight of the total amount of the hydrolyzable decane compound (in terms of the total hydrolysis condensate). When the ratio of use of the metal chelate compound is less than 0.0001 part by weight, the coating property may be poor. On the other hand, if it exceeds 10 parts by weight, the polymer may not be controlled to grow and gelation may occur. 5〜20摩尔的水,特别添加1~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~ 10 moles of water is better. If the amount of water added is less than 0.5 mol, there will be a case where the hydrolysis reaction is not sufficiently carried out, and the coating property and the storage stability are problematic. On the contrary, if it exceeds 20 mol, there will be a hydrolysis and condensation reaction. In the case where polymer precipitation or gelation occurs. In addition, the water is preferably added in a batch or continuous manner. 1.4. 2. Acidic compound The acidic compound which can be used as the (C) catalyst can be exemplified by an organic acid or an inorganic acid, preferably an organic acid. Examples of the organic acid include acetic acid, propionic acid, 97104568 29 200848451 butyric acid, valeric acid, caproic acid, heptanoic acid, caprylic acid, capric acid, capric acid, oxalic acid, maleic acid, methylmalonic acid, and Diacid, azelaic acid, gallic acid, butyl acid, benzoic acid, peanut oleic acid, shikimic acid, 2-ethylhexanoic acid, oleic acid, stearic acid, linoleic acid, linolenic acid, water yang Acid, benzoic acid, p_amino benzoic acid, P-toluene, benzoic acid, monochloroacetic acid, dichloroacetic acid, trichloroacetic acid, trifluoroacetic acid, formic acid, malonic acid, tartaric acid , citric acid, antibutanic acid, citric acid, tartaric acid, maleic anhydride, fumaric acid, pentanoic acid, succinic acid, mesaconic acid, citraconic acid, malic acid, malonic acid, The hydrolyzate of glutarylene, the hydrolyzate of maleic anhydride, and the hydrolyzate of phthalic anhydride. The first inorganic acid may be, for example, hydrochloric acid, nitric acid, sulfuric acid, hydrofluoric acid, phosphorus, or From the viewpoint of less precipitation of the polymer in the condensation reaction and less threat of coagulation, it is preferably an organic acid, particularly a compound having a carboxyl group, and more preferably Acetic acid, ¥ acid, cis acid, malonic acid, acid, fumaric acid, itaconic acid, succinic acid, mesaconic acid, citraconic acid, j-glycolic acid, glutaric acid, butylene The organic S such as the hydrolyzate of the dianhydride is 4 inches long. These systems may be used alone or in combination of two or more. The amount of the hydrazine acidic compound used is 100 parts by weight based on the total amount of the hydrolyzable decane compound (in terms of the total hydrolysis condensate), and is used in the case of • 0001 1 0 parts by weight, preferably 5 parts by weight. When the acidic compound is used in an amount of 00 parts by weight based on the total amount of the hydrolyzable decane compound, less than 0/0001 parts by weight, the coating property may be poor, and if it exceeds 10 parts by 1 part, the hydrolysis condensation reaction will be The case of gelation occurs when it is rushed. 97104568 30 200848451 In the presence of acidic compounds in the presence of τ, when the hydrolysis is condensed, 'preferably relative to the hydrolyzable dream compound total ffc:= 亍hydrolyzed 〇· 5~20 moles of waves, I heart and mother 1 molar use of added water Less than OB: 1~1 〇 Moer's water is better. If the added material does not ride 5 materials, there will be a case where the hydrolysis reaction is not _ dimorphism and storage stability will occur. On the contrary, J super: 〇 4 ears, there will be in the hydrolysis and condensation reaction. In addition, the water is preferably in a batch or continuous manner;; the addition of the substance, the gel 1·4·3·the test compound ▲ can be used as the basic compound of the (C) catalyst, for example, a sub-amine, a propanolamine Butanolamine, N-methylmethanolamine, N_propylpropylmethanolamine, N-butylmethanolamine, "ethanolamine=ethylamine ethanol, hydrazine-propylethanolamine, hydrazine-butylethanolamine, ethethylethyl Propylamine, Ν-propylpropanolamine, Ν_丁: propyl = butylbutanyl butanolamine, di-St-methylmethanolamine, N,N-diethylmethanolamine, N,N-dipropyl Methanolamine, N-butyl butyl methoxide, N, bis dimethylethanolamine, & n-diamine, n, n-dipropylethanolamine, N,N-dibutylethanolamine ==A, N-Guang-Diethylpropanolamine Rudipropylpropanolamine: Di-n-butyl-propyl-propyl female, N,N-dimethylbutanolamine, NN-dipropylbutanolamine, u-two Butyl butanolamine, diamine, N-ethyldi-folamine, N-propyldimethanolamine, n-butyldi-N-methyldiethanolamine, n-ethyldiethanolamine, (tetra)diethanolamine , butyl diethanolamine, " bispropanolamine, N-ethyldipropanolamine, N_propyl Dipropanolamine, N-butyldipropanolamine, " butylbutanolamine, ^ 97104568 31 200848451 ethyl dibutanolamine, propyl dibutanolamine, N_ butyl butanolamine, N- (Aminomethyl)methanolamine, N-(aminomethyl)ethanolamine, N-(aminomethyl)propanolamine, N-(aminomethyl)butanolamine, N-(aminoethyl) Methanolamine, N-(amine §ethylethyl)ethanolamine, N-(aminoethyl)propanolamine, N-(aminoethyl)butyl, alcoholamine, N-(aminopropyl)methanolamine , N-(Aminopropyl)ethanolamine, N-(Aminopropyl)propanolamine, N-(Aminopropyl)butanolamine, N-(Aminobutyl)methanolamine, N-(Amine Butyl)ethanolamine, N-(aminobutyl)propanolamine, N-(aminobutyl)butanolamine, methoxymethylamine, methoxyethylamine, methoxypropylamine, methoxy Butylamine, ethoxymethylamine, ethoxyethylamine, ethoxypropylamine, ethoxybutylamine, propoxymethylamine, propoxyethylamine, propoxypropylamine, propoxybutylamine, butyl Oxymethylamine, butoxyethylamine, butoxypropylamine, butoxybutylamine, decylamine, ethylamine, propylamine, butylamine, N, N Indoleamine, N,N-diethylamine, N,N-dipropylamine, n,N-dibutylamine, tridecylamine, triethylamine, tripropylamine, dibutylamine, tetraammonium hydroxide, hydrogen hydroxide Ethylammonium, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetradecylethylenediamine, tetraethylethylenediamine, tetrapropylethyldiamine, tetrabutylethylenediamine, mercaptoaminemethylamine , methylaminoethylamine, mercaptoamine propylamine, mercaptoamine butylamine, ethylaminoguanamine, ethylaminoethylamine, ethylaminopropylamine, ethylaminobutylamine, propyl Aminoguanamine, propylaminoethylamine, propylaminopropylamine, propylaminobutylamine, butylaminoguanamine, • butylaminoethylamine, butylaminopropylamine, butylamino Butylamine, pyridine, pyridinium; argon, piperazine, pyrrolidine, piperidine, mercaptopyridine, morpholine, decylmorpholine, diazabicyclooctane, diazabicyclononane, diazabicyclolaurite , ammonia, sodium hydroxide, hydroxide, barium hydroxide, barium hydroxide, etc. The basic compound is particularly preferably a nitrogen-containing compound represented by the following general formula (5) (also referred to as "compound 5" under 97104568 32 200848451). (X 丨X2X3X4N)gY (5) In the above general formula (5), χ1, χ2, χ3, χ4__ represent a non-deuterium atom, a carbon number of 20, and preferably a base group, an ethyl group, and a propyl group. 3 is preferably an ethyl group, an aromatic group (most ~: two 4), a quaternary alkyl group (preferably a phenylmethyl group, etc.); a γ system means a tooth atom = a fluorine atom, a chlorine atom, a desert atom, Impeding atoms, etc.), the ionic group of valence (preferably hydroxyl, etc.); g means! An integer of ~4. Specific examples of the π 5 are, for example, tetramethylammonium hydroxide tetraethylammonium hydroxide, tetra-n-propylammonium hydroxide, tetraisopropylammonium hydroxide, tetra-n-butylammonium hydride, Tetraisobutyl hydride, tetrahydric hydroxide tetradecyl, =: ammonium, tetrahexammonium hydroxide, tetraheptyl ammonium hydroxide, tetrahydric hydroxide -: Μ Μ #四壬钱' A oxidized fourteen burning Ammonium, tetra(thyl) hydroxide, tetra(didecyl)ammonium hydroxide, evolution of four armor, chlorination of four f, evolution of four E money, chlorination of four Ethyl, desertification of four positive Ammonium, chlorinated=propylammonium", stinky tetra-n-butyl, chlorinated tetra-n-butyl, hexadecyl-chloroammonium chloride, evolution of the sixteen-burning base, three gas recording, gas oxidation, N-octadecyltrimethylammonium monobromide, cetyltrimethylammonium chloride, stearyltrimethylammonium chloride, chlorinated thallium trimethyl hydrazine, dimercapto dimethyl chlorinated, hard Fatty dimethyl ammonium chloride, tridecyl chlorohydrin, tetrabutylammonium hydrogen sulfate, desertified tributylmethylammonium chloride, trioctylmethylammonium chloride, trilaurate chlorohydrin, hydroxide base Trimethylammonium, desertification Ethylammonium, desertified stilbene dibutylammonium bromide, phenyltriammonium bromide, choline, etc. Among these, particularly preferred are: tetraammonium hydroxide, tetraethylammonium hydroxide, tetra-n-butyl hydroxide Ammonium, 97104568 33 200848451 Tetra-n-butylammonium chloride, tetraethylammonium bromide, tetra-n-propylammonium bromide, tetraammonium bromide, tetraethylammonium bromide, can be used alone, or can be used N-propylammonium. The compound 5 can be used in two or more types. The amount of the test compound used is based on the total amount of the hydrolyzable hydrolyzable group, and the amount of 0.0_5 to 5 in the mouth. Ear, preferably 1 · 5 · Organic solvent The cut polymer of this embodiment is prepared, and the compound is prepared by dissolving the compound in an organic solvent to prepare a first liquid. For example, isopropyl alcohol, n-butanol, isobutanol, the first alcohol solvent, ethylene glycol, propylene glycol, and 1,3-butyl; 2, pentanediol, 2-methyl _2,4-pentanol a to Z'4 2-ethyl*hexanediol, alcohol 'hexa-, 2,4-heptanediol, one product ^yiyizhi, dipropylene glycol, triethylene glycol C 4 夕 is a solvent; ethylene glycol monoterpene, ethylene glycol monoethylan:: B: alcohol early propyl ether, ethylene glycol monobutyl ether and other polyols partial ether soluble: wide ether, isopropyl ether, n-butyl Ether, n-hexyl ether, 2-ethylhexyl ether, epoxy propylene propylene, 4-pentane, 4-methyl 4-pentane, di- 4:, monomethyldioxane, ethylene glycol monomethyl ether, B Ethylene glycol dimethyl ether, ethylene two: ether, ethylene glycol diethyl ether and other ether solvents; propylene, methyl ethyl ketone, chloroacetone, methyl n-butanone, diethyl ketone, methyl isobutyl ketone, Methyl, iso, ethyl n-butyl, methyl n-hexanone, diisobutyl ketone, trimethyl fluorenone, pentanone, cyclohexyl, cycloheptanone, cyclooctane _, 2 _ _, A A solvent such as a cyclohexanone, a 4-pentanedione, a propylpropanoid, or a diacetone alcohol. Further, 97104568 34 200848451 The organic solvent constituting the second solution is preferably the same solvent. ', α and the above-mentioned first liquid constituting the first liquid 6. The ruthenium-containing polymer of the present embodiment has a carbon atom content of 8 to 40 atom% (preferably, according to the synthesis method) 15~4.0 (preferably u~3 5, ~2〇 atom, and the 黯/Mn form of the polymer containing Shi Xi, because the 5 move %8 is better). In this embodiment, and contains a certain amount of carbon Atom, Inri: When the film forming composition of ^^^ is subjected to oxidation = 3±, there is a core oxide film having a lower dielectric constant of the complex L 1 . Here: :=4.0' will have a meeting A problem of a polymer plexus that has an effect on over-sexability, or a low-molecular weight body that hinders a decrease in the value of 1^. The carbon atom content (atomic %) of a polymer containing a smectite is made in: r3 stone The first base based on the component used in the shovel (hydrolyzable smelting compound) is hydrolyzed to form a sterol group, and the thiol group formed is completely, and the thiophene bond is formed by the primate. The elemental composition of the time is obtained, and specifically, it can be obtained from the following formula: The content of carbon atoms (the number of carbon atoms of the atomic organic cerium oxide sol) / (total number of atoms of the organic cerium oxide sol) xl0 () The weight average molecular weight (Mw) of the dream-containing polymer is preferably 1,000 to 2 Å, 〇〇〇, especially 5,000 to 1 50, 00 () is preferred. If the weight average molecular weight of the ruthenium-containing polymer is more than 20,000, the gelation phenomenon will easily occur 'and the pores in the obtained ruthenium dioxide film are easily too large, and thus it is preferable to avoid. If the weight average molecular weight of the ruthenium-containing polymer is less than 97104568 35 200848451 1, 涂布, the coating property and the storage stability are prone to problems. 17·Effect effect j The synthesis method of the cut polymer of the present embodiment, The second liquid containing the first hydrazine, the hydrazine, and the (B) hydrolyzable decane monomer, which are at least one hydrolyzable decane compound, is added to the second liquid, and the hydrolysis is carried out. "Sintering: a step of = = : :" can obtain a ruthenium-containing polymer that suppresses the occurrence of large particles, has a molecular weight change of 1', and has a predetermined carbon content. Therefore, the user's: a polymer containing Shi Xi Shaped by the film forming composition; number and hygroscopicity are small, and mechanical strength Resistance are excellent |., Hanging 2. The composition for film formation composition for forming a film ::: form, containing the lines

物與有機溶劑。 艰S 2 · 1 ·有機溶劑 舉二膜形成用組成物所使用之有機溶劑係可 η攸%糸洛劑、酮系溶劑、 正:二溶劑係可舉例如1醇、乙醇、正丙醇、異_ 丁醇、第二丁醇、第三丁醇、 :、 2-甲基丁醇、第二戊薛、筐二 、戍酉子、 醇、2-甲基戊醇、第:上甲氧基丁醇、正己 座萨X ^ 弟一己知2_乙基丁醇、第二庚醇、q =辛醇、2-乙基己醇、第二辛醇、正壬醇、2 - -甲基-4-庚醇、正癸醇、第二(十一烧基)醇、三甲基^ 971〇4568 36 200848451 醇、第二(十四烷基)醇、 環己醇、曱基環己醇、3,3 十七燒基)醇、糠醇、紛、 酮醇等單醇系溶劑; ,一甲基環己醇、苄醇、二丙 乙二醇、1,2 -丙二醇、1 甲基-2,4-戊二醇、2,5_己一’二醇、2,4-戊二醇、2- 元醇系溶劑; 一乙一酉予、三丙一醇專夕 乙一醇單曱驗、乙二醇 單頂、乙二醇單己喊、乙_ =、乙二醇單丙鍵、乙二醇 基丁驗、二乙二醇單甲醚、:二早苯醚、乙二醇單-2-乙 丙趟、二乙二料頂、二乙二料乙⑽、^二酸單 丙二醇單乙n醇單—_— 喊、丙二醇單甲謎、 單甲驗、二丙二醇單乙峻、二丙:醇單丁喊、二丙二醇 喊系溶劑等等。該等醇系㈣等多元醇部分 時使用2種以上。 —可早獨使们種、亦可同 酮系溶劑係可舉例如:丙 甲基正丁酮、二乙酮、甲二丁 :基乙,、甲基正丙酮、 頂、甲美… 同、甲基正戊酮、乙基正 == 異丁,、三甲基壬酮、環戊酮、環 ㈣、壤庚酮、環辛_、2_己綱、甲基環己酮、2,4_戊二 酉同丙酮基丙_、二丙酮醇、茉f两 兮笼舫会w十丨〆 本乙顯1、酚酮等酮系溶劑。 s=:r係可單獨使用1種、亦可同時使用2種以上。 广糸洛劑係可舉例如:N,N-二甲基物二酮、" 基甲醯胺、N,N-二甲基甲醯胺、N N一 脸、Νί田I 7 * ,丨Ν —乙基甲醯胺、乙醯 胺"基乙醯胺爆二甲基乙醯胺、"基丙醯胺、 97104568 37 200848451 11f:各:_等含氮系溶劑。該等醯胺系溶劑係可單獨 使用1種、亦可同時使用2種以上。 早獨 醚系溶劑係可舉例如:乙鱗、異丙喊、正丁趟 2_乙基”、環氧乙燒、1,2_環氧丙烧一号戊燒:4: 曱基一 口等戊烧、二ϋ等说、-审其 7烷一曱基一 12亏烷、乙二醇單曱醚、 乙一醉一甲醚、乙二醇單乙醚、乙二醇二乙醚、乙 正丁缝、乙二醇單正己_、乙二醇單苯醚、乙二醇單—2 — 乙基丁醚、乙二醇二丁醚、二乙二醇單曱醚、二乙二醇二 曱ϋ、二乙二醇單乙醚、二乙二醇二乙醚、二乙二醇單正 ' 乙醇—正丁驗、二乙二醇單正己趟、乙氧基二 乙二醇、四乙二醇二正丁醚、丙二醇單曱醚、丙二醇單乙 喊、丙二醇單丙_、丙二醇單丁醚、二丙二醇單甲醚、二 丙一醇單乙醚、三丙二醇單曱醚、四氫呋喃、2—曱基四氫 呋喃、二苯醚、茴香醚等醚系溶劑。該等醚系溶劑係可單 獨使用1種、亦可同時使用2種以上。 醋系溶劑係可舉例如:碳酸二乙酯、碳酸丙烯酯、醋酸 曱醋、醋酸乙酯、7 -丁内酯、7 -戊内酯、醋酸正丙酯、 醋酸異丙酯、醋酸正丁酯、醋酸異丁酯、醋酸第二丁酯、 醋酸正戊酯、醋酸第二戊酯、醋酸3-曱氧基丁酯、醋酸 曱基戊酯、醋酸-2-乙基丁酯、醋酸-2-乙基己酯、醋酸苄 酉旨、醋酸環己酯、醋酸曱基環己酯、醋酸正壬酯、乙醯醋 酸甲酯、乙醯醋酸乙酯、醋酸乙二醇單曱醚、醋酸乙二醇 單乙醚、醋酸二乙二醇單甲醚、醋酸二乙二醇單乙醚、醋 酸二乙二醇單正丁鍵、醋酸丙二醇單曱醚、醋酸丙二醇單 97104568 38 200848451 乙趟酕心丙二醇單丙越、醋酸丙二醇 二醇單W、醋酸二丙二醇單乙趟、乙::趟、醋酸二丙 酸歹氧基三乙二醇酯、丙酸乙酯:::醋酸酯、醋 醋、草酸二乙酷、草酸二正丁 了知、丙酸異戊 乳酸正丁醋、乳酸正戊醋、丙二酸:酉::醋二酸乙醋、 ㈣二乙醋等i系溶劑。該等"::、酞酸二甲醋、 種、亦可同時使用2種以^4系〉谷劑係可單獨使用1 Γ 【:族=溶劑係可舉例如:正戊燒、異戍烧、正己燒、 =、正庚燒、異庚烧、2,2,4_三甲基戊炫、正辛院、 肪族二Ϊ:甲基環己烧等脂肪族煙系溶劑。該等脂 ^系〉谷劑係可單獨使用1種、亦可同時使用2種以上。 一::,溶劑係可舉例如:苯、甲苯、二子苯、 ϋ 本Jit乙苯、正丙ί苯、異丙基苯、二乙苯、異 二'々广一異丙基本、正戊萘、三甲基苯等芳香 可二^合副。δ亥等方香族烴系溶劑係可單獨使用工種、亦 :5日守使用2種以上。含函溶劑係可舉例如:二氯甲烧、 軋仿二氟龍、氯苯、二氯苯等含鹵溶劑。 。本Λ施$ &的膜形成用組成物,最好使用沸點未滿1 C的线溶劑,尤以醇系溶劑、酮系溶劑、s旨系溶劑為佳, 且"亥等係可單獨使用1種、亦可同時使用2種以上。 該等有機溶劑亦可使用與進行含石夕之聚合物合成時所 使用者為相同的溶劑,亦可在含石夕之聚合物進行合成結束 後,將溶劑取代為所需有機溶劑。 本發明-實施形態的膜形成用組成物總固形份濃度,最 97104568 39 200848451 好為0·:1〜20質量%,可配合使用目的予以適當調整。藉由 將本發明一實施形態的膜形成用組成物總固形份濃度設 為0· 1〜20質量%,便可使塗膜膜厚呈現適當範圍,呈現具 更優越的保存穩定性。另外,該總固形份濃度的調整,視 -而要可利用濃縮與由有機溶劑進行的稀釋而實施。 2 · 2 ·其他添加物 、 本實施形態的膜形成用組成物中,尚可添加有機聚合 物、界面活性劑等成分。 (2 · 2 · 1 ·有機聚合物 有機聚合物係可舉例如:具有醣鏈結構的聚合體、乙烯 醯胺系聚合體、(甲基)丙烯酸系聚合體、芳香族乙烯化合 物系聚合體、樹枝狀高分子、聚醯亞胺、聚酿胺酸、聚芳 香:^聚醯胺、聚啥崎琳、聚崎二哇、氣系聚合體、具有 聚環氧烧結構的聚合體等。 取t有聚環氧烧結構的聚合體係可舉例如:聚甲酸結構、 ^承裒氧乙燒結構、聚環氧丙烧結構、聚四甲酸 氧丁烷結構等。 # w ,具體,可舉例如:聚氧亞甲基烷基醚、聚氧乙烯烷基 醚♦氧乙稀烧基苯騎、聚氧乙稀固醇鱗、聚氧乙稀羊毛 脂衍f物、燒基紛甲i縮合物的環氧乙烧衍生物、聚氧乙 烯聚乳丙烯嵌段共聚物、聚氧乙稀聚氧丙稀烧基輕等鍵型 =物;聚氧乙烯甘油脂肪酸酉旨、聚氧乙稀山梨糖醇肝脂 ^曰、聚氧乙烯山梨糖醇脂肪酸§旨、聚氧乙烯脂肪酸烧 ㈣胺硫酸鹽等_旨型化合物;聚乙二醇脂肪酸酯、乙二 97104568 200848451 醇脂肪酸酯、脂肪酸單甘 醇酐脂肪酸3旨、丙二⑭㈣:甘仏肪酸酯、山梨糖 化合物以。 肪酉夂酉曰、蔗糖脂肪酸醋等醚醋型 如具有下述嵌 聚氧乙烯聚氧丙烯喪段共聚物 段結構的化合物: 牛例 —(X’(Y,)m-(X,)n- (式中,Γ係指—CH2CH2〇-所示芙· v,及4b Γ所示基;!係指卜90的數二=(㈤〇-指〇〜90的數值。) ,係^ 10〜99的數值;η係 該等之中的較佳例係有如 聚氧丙婦礙段共聚物、聚氧乙席坑基秘、聚氧乙烯 稀甘油脂肪酸醋、聚氧乙;山=乳丙婦燒基峻、聚氧乙 細山梨糖醇脂肪酸酯等驗型化 二二乳乙 單獨使用1種、亦可同時#用述有Μ合物係可 用量係相對於所獲得之取以上。有機聚合物的使 1〜200重量份。 ί已物100重量份,通常使用 2 · 2 · 2 ·界面活性劑 ===劑係可舉例如:非離子系界面 等,尤以諸如u劑、兩性界面活性劑 ^ ® 劑、聚矽氧系界面活性劑、聚 衣虱烷糸界面活性劑、 蜊承 為佳,更以氟季 (甲基)丙細酸醋系界面活性劑等 ® s 、, /舌性劑、聚矽氧系界面活性劑為佳。 界面活性劑的佶用旦#上" 丨王片J苟佳 里係相對於所獲得之矽系聚合物1〇〇 97104568 200848451 ^ 通$使用〇.00001〜1重量份。該等係可單獨使用 1種、亦可同時使用2種以上。 3. —氧化矽系膜之形成方法 、本毛月貫施形悲的二氧化矽系膜(絕緣膜)之形成方 ,=’、係包括有··將上述膜形成用組成物塗佈於基板上,而 /成主膜的步驟,以及對塗膜施行硬化處理的步驟。 膜形成用組成物所塗佈的基板係可舉例如:Si、Si〇2、 (、SiM SiC、SiCN等含Si層。將膜形成用組成物塗佈於基 +的方法,係可使用諸如旋塗、浸潰法、滚筒塗佈法、 喷塗法等塗裝手段。在對基板施行膜形成用組成物塗佈 後,再將溶劑去除便可形成塗膜。此時的膜厚係可形成依 乾,膜厚計,i次塗抹的厚度為〇〇5〜25#m,2次塗抹 的厚度為〇.卜5. 〇 # m的塗膜。然後,對所獲得的塗膜施 行硬化處理,便可形成二氧化矽系膜。 硬化處理係有如:加熱、電子束或紫外線等高能量線照 〇射電漿處理、以及該等的組合,最好採取加熱處理或高 能量線照射。 當利用加熱施行硬化時,將該塗膜在非活性環境下或減 壓下,加熱至80〜450°C (最好30(TC〜450。〇。此時的加熱 ,方法係可使用諸如:加熱板、烤箱、高溫爐等,而加熱環 ; 境則可在非活性環境下、或減壓下實施。 再者,為控制上述塗膜的硬化速度,視需要,可施行階 段式加熱、或選擇在氮、空氣、氧、減壓等環境下實施。 藉由此種步驟便可施行二氧化石夕系膜的製造。 97104568 42 200848451 4.二氧化矽系膜 本發明-實施形態的二氧化石夕系臈’因為屬於低介電係 文且表面平坦性優越,因而特別適用於諸如⑶、系統 LSI、D_、SDRAM、RDRAM、D_RDRAM 等半導體元件用的 層間絕緣膜,且適用於諸如:餘刻終止膜、半導體元件的 表面被覆料保護膜、使用多層光阻進行的半導體製作步 驟之中間層、多層佈線基板的層間絕緣膜、液晶顯示元件 用的保護膜、絕緣膜等。此外,本實施形態的二氧化石夕系 膜係可使用於包括有銅鑲嵌製程的半導體裝置。 本實施形態的二氧切系膜係介電f數較佳為 佳為2.5〜15.0GPa,更佳3.0〜12 0GPa,膜密度最 0.二1.3g/crn3,尤以0.8〜1.27g/cm3為佳。由該等條件‘, 本貝鉍形怨的有機二氧化矽系膜便可謂機械特性、耐藥 性、及低介電常數等絕緣膜特性均極優越。 ^ 5.實施例 以下,就本發明舉實施例進行更具體的說明。本發明並 不僅侷限於以下的實施例。另外,實施例與比較例中的 「份」與「%」在未特別聲明的前提下,分別係指「重量 份」與「質量%」。 胃 ^ 5. 1.評估方法 各種評估係依如下述實施。 另外,針對彈性係數與耐藥性係使用依照以下方法所形 成的聚合物膜(二氧化矽系膜)。即,將依各實施例與比較 97104568 43 200848451 例所獲得的組成物,利用旋塗法塗佈於石夕晶圓上之後,再 於加熱板上’將基板依90°C施行3分鐘的乾燥,並於氮 環境下,依200°C施行3分鐘乾燥,更在400°C氮環境下, 利用加熱板將基板施行6 〇分鐘燒成,獲得膜厚5 〇 〇 # m聚 • 合物膜,並將該聚合物膜使用於上述各種評估。 5· 1· 1.介電常數測定、△ k 在具有0 · 1 Ω · cm以下之抵抗率的8对n型石夕晶圓上, p使用旋塗法將膜形成用組成物施行塗佈,並於加熱板上依 90°C施行3分鐘乾燥,接著再於氮環境下依2〇〇。(:施行3 分鐘乾煉,更在50mTorr減壓下(真空環境)依42〇^的直 立式高溫爐施行1小時燒成,獲得膜。 在所獲得膜上,利用蒸鑛法形成鋁電極圖案,製成介電 常數測定用樣品。針對該樣品,依頻率1〇〇kHz的頻率, 使用Agilent公司製、HP16451B電極與HP4284A介電分 析儀LCR錶,依照CV法,測定室溫(24。〇與2〇(rc下的 (該膜之介電常數。 △k係在室溫(_、侧Hit境 a@RT)、與在2GG C、乾燥氮環境下所測得介電常數⑽2〇〇 。〇間之差(^k =k@RT—k@2〇(rc)。利用該Ak,主要可坪 •估膜因吸濕所造成的介電常數上升量。通常,若Ak達 :〇·15以上,可謂吸濕性高的有機二氧化矽膜。 5·1·2·膜的彈性係數(Y〇ung rati〇)評估、 膜的彈性係數係利用連續剛性測定法進行測定。 5· 1· 3·耐藥性 97104568 44 200848451 將,形成二氧化矽系膜的8吋晶圓,在室溫下,於〇. 2% 稀氫氟k水溶液中浸潰1分鐘,並觀察浸潰前後的二氧化 矽系膜膜厚變化。若依下述所定義的殘餘膜率達99%以 上’便判斷耐藥性屬良好。 殘餘膜率(%) = (經浸潰後的膜之膜厚)+ (浸潰前的 膜厚)xl00 A:殘餘膜率達99%以上。 B:殘餘膜率未滿99%。 5· 1· 4·重量平均分子量Mw、數量平均分子量此、分子量 分佈的分散Mw/Mn 水解縮合物的重量平均分子量(M w)與數量平均分子量 (Μη),係依照下述條件的分子篩色層分析儀法進行 試料:將濃度1 Omm〇 1 /L之LiBr-IhPO4的2_甲氧基乙醇溶 液,使用為溶劑,並將水解縮合物〇 lg溶解於i〇〇cc二 ^OiMol/DaiBr-hPO4)之2-甲氧基乙醇溶液中而進行調 標準試料:使用WAK0公司製、聚環氧乙烧。 t置:使用Tosoh(股)公司製、高速Gpc裝置 HLC-8120GPC)。 管柱:使用將Tosoh(股)公司製、tSK—gel別pER AWM-H(長度15cm),串聯設置3支的裝置。 測定溫度:40°C 流速:0. 6ml/min· 97104568 45 200848451 檢測器:利用Tosoh(股)公司製、高速GPC裝置(型號 HLC-8120GPC)内建的RI進行檢測。 再者,分子量分佈的分散係利用Mw/Mn進行計算。該值 越小’表示分子量分佈越接近常態分佈。 5· 2·膜形成用組成物之製造 5· 2· 1.合成例1 在具備冷凝器之石英製三口燒瓶中,秤取溶液(2):1〇% p氫氧化四丙銨水溶液69.93g、超純水I22.96g、及乙醇 235· 73g,並溶解。接著,將溶液(1):甲基三甲氧基矽烷 46.20g、四乙氧基矽烷3(h28g、具有依下式(7)所示結構 (式中,η係指1以上的數值)之聚碳矽烷(Mw=8〇〇)7. 96g、 及乙醇192· 87g的混合溶液,填充於滴液漏斗中。一邊將 溶液(2)在60°C下進行攪拌,一邊將溶液歷時3小時 滴下後,在60°C下持續攪拌3小時。將反應液冷卻至室 溫後’添加丙二醇單丙醚669· 57g、及20%醋酸水溶液 (30· 43g。將該反應液於減壓下施行濃縮,直到固形份濃度 達10 %為止’獲得膜形成用組成物1。 [化3]And organic solvents. In the organic solvent, the organic solvent used in the composition for forming a two-film film may be an η攸% 糸 糸 agent, a ketone solvent, or a positive solvent: for example, 1 alcohol, ethanol, n-propanol, Isobutanol, second butanol, third butanol, :, 2-methylbutanol, second pentamyl, basket II, hazelnut, alcohol, 2-methylpentanol, first: upper methoxy Butyl alcohol, Zhengjizao X ^ brother knows 2_ethylbutanol, second heptanol, q = octanol, 2-ethylhexanol, second octanol, n-nonanol, 2-methyl -4-heptanol, n-nonanol, second (undecyl) alcohol, trimethyl^ 971〇4568 36 200848451 alcohol, second (tetradecyl) alcohol, cyclohexanol, nonylcyclohexanol , 3,3 heptadecyl) alcohol, sterol, ketone, and other monoalcoholic solvents; , monomethylcyclohexanol, benzyl alcohol, dipropylene glycol, 1,2-propylene glycol, 1 methyl- 2,4-pentanediol, 2,5-hexa-diol, 2,4-pentanediol, 2-alcohol solvent; one-by-one, three-propanol, monoethyl alcohol Ethylene glycol single top, ethylene glycol single shout, B _ =, ethylene glycol monopropyl bond, ethylene glycol based test, two Glycol monomethyl ether, dioxane phenyl ether, ethylene glycol mono-2-ethylenepropene oxime, diethylene glycol top, diethylene glycol B (10), diacid monopropylene glycol monoethylenol mono-_- shout , propylene glycol monochao, single-test, dipropylene glycol mono-British, di-propanol: alcohol single-dial, dipropylene glycol shouting solvent and so on. Two or more kinds of the polyol portion such as the alcohol (IV) are used. - It can be used alone or in combination with a ketone solvent. For example, propyl methyl n-butanone, diethyl ketone, methyl butyl ketone: ketone, methyl acetonide, ketone, kemei, etc. Methyl-n-pentanone, ethyl positive == isobutyl, trimethyl fluorenone, cyclopentanone, ring (tetra), phosphonone, cyclooctane _, 2 _ gang, methyl cyclohexanone, 2, 4 _ 戊二酉 with acetone propyl _, diacetone alcohol, jas f two 兮 舫 舫 丨〆 丨〆 丨〆 乙 乙 乙 乙 乙 1、 1、 1、 1、 1、 1、 1、 1、 1、 1、 1、 1、 1、 The s=:r system may be used alone or in combination of two or more. For example, N,N-dimethyldione, " carbamide, N,N-dimethylformamide, NN face, Νί田 I 7 * , 丨Ν -ethylformamide, acetaminophen < acetylamine decyl dimethyl acetamide, " propyl amide, 97104568 37 200848451 11f: each: _ and other nitrogen-containing solvents. These amide-based solvents may be used singly or in combination of two or more kinds. Examples of the solvent of the early-only ether system include: ethyl scale, isopropanyl, n-butyl 2-(ethyl), ethylene bromide, 1,2-epoxypropanone, and the like: 4: sulfhydryl, etc. Ethylene, Erqi, etc., and its acetylene, sulfhydryl monodecyl ether, ethylene glycol monoethyl ether, ethylene glycol monoethyl ether, ethylene glycol diethyl ether, and ethylene , ethylene glycol mono-n-hexane, ethylene glycol monophenyl ether, ethylene glycol mono-2-ethyl butyl ether, ethylene glycol dibutyl ether, diethylene glycol monoterpene ether, diethylene glycol diterpene, Diethylene glycol monoethyl ether, diethylene glycol diethyl ether, diethylene glycol mono-n-ethanol-n-butyl, diethylene glycol mono-n-hexane, ethoxy diethylene glycol, tetraethylene glycol di-n-butyl Ether, propylene glycol monoterpene ether, propylene glycol monoethyl ketone, propylene glycol monopropyl propylene glycol, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropanol monoethyl ether, tripropylene glycol monoterpene ether, tetrahydrofuran, 2-mercaptotetrahydrofuran, two An ether-based solvent such as phenyl ether or anisole. The ether-based solvent may be used singly or in combination of two or more kinds. Examples of the vinegar-based solvent include diethyl carbonate and propylene carbonate. Acetate acetate, ethyl acetate, 7-butyrolactone, 7-valerolactone, n-propyl acetate, isopropyl acetate, n-butyl acetate, isobutyl acetate, dibutyl acetate, n-amyl acetate , second amyl acetate, 3-methoxybutyl acetate, decyl amyl acetate, 2-ethylbutyl acetate, 2-ethylhexyl acetate, benzyl acetate, cyclohexyl acetate,曱-cyclohexyl acetate, n-decyl acetate, methyl acetate, ethyl acetate, ethyl acetate, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether, acetic acid Ethylene glycol monoethyl ether, diethylene glycol diacetate mono-n-butyl bond, propylene glycol mono-decyl ether acetate, propylene glycol acetate single 97104568 38 200848451 Ethyl propylene glycol monopropylene, propylene glycol glycol mono W, dipropylene glycol monoacetate , B:: bismuth, acetic acid dipropionate decyloxy triethylene glycol ester, ethyl propionate::: acetate, vinegar vinegar, oxalic acid, diethyl oxalate, oxalic acid di-n-butyl, known, propionic acid isotonic acid Butai vinegar, lactic acid n- vinegar, malonic acid: 酉:: vinegar diacetate, (iv) diethyl vinegar and other i-based solvents. These ": , dimethyl citrate, seed, can also be used at the same time to use ^ 4 system 〉 gluten system can be used alone 1 Γ [: family = solvent can be, for example, n-pental, iso- simmer, sinter, = , Zhenggeng Shao, Yi Geng Shao, 2,2,4_Sanmethylpentyl, Zhengxinyuan, Alidi Dimethoate: aliphatic fumarate solvents such as methylcyclohexane. These lipids are based on cereals. One type may be used alone or two or more types may be used at the same time. One:: The solvent may, for example, be benzene, toluene, diphenylbenzene, hydrazine, Jit ethylbenzene, n-propylbenzene, cumene, diethyl Benzene, iso-di' 々 broad-isopropyl basic, n-pentyl naphthalene, trimethylbenzene and other aromatics can be combined. The δ hai and other aromatic hydrocarbon-based solvent systems can be used separately, also: 5 days to use 2 The above-mentioned solvent is, for example, a halogen-containing solvent such as dichloromethane or a difluoride-like, chlorobenzene or dichlorobenzene. . The composition for forming a film of $ & is preferably a linear solvent having a boiling point of less than 1 C, particularly preferably an alcohol solvent, a ketone solvent, or a solvent of s, and the "Hai system alone One type may be used or two or more types may be used at the same time. The organic solvent may be the same solvent as that used for the synthesis of the polymer containing the sulphate, or may be substituted with the solvent to the desired organic solvent after the synthesis of the polymer containing the sulphate. The total solid content concentration of the film-forming composition of the present invention is preferably from 0.014568 39 200848451 to from 0: 1 to 20% by mass, and can be appropriately adjusted in accordance with the purpose of use. By setting the total solid content concentration of the film-forming composition of the embodiment of the present invention to 0.1 to 20% by mass, the film thickness of the coating film can be set to an appropriate range, and the storage stability can be exhibited. Further, the adjustment of the total solid content concentration can be carried out by using concentration and dilution with an organic solvent. 2·2·Other Additives In the film-forming composition of the present embodiment, components such as an organic polymer and a surfactant may be added. (2 · 2 · 1) The organic polymer organic polymer may, for example, be a polymer having a sugar chain structure, a vinyl guanamine polymer, a (meth)acrylic polymer, or an aromatic vinyl compound polymer. Dendrimer, polyimine, poly-aramid, poly-aromatic: poly-polyamine, poly-zinaki, polysaki, gas-based polymer, polymer with polyepoxy structure, etc. The polymerization system having a polyepoxy-fired structure may, for example, be a polyformic acid structure, a ruthenium-oxygen-oxygen-fired structure, a polyglycidyl-fired structure, a polytetramethylene oxide butane structure, etc. # w , specifically, for example : polyoxymethylene alkyl ether, polyoxyethylene alkyl ether ♦ oxyethylene benzoic acid Benzene, polyoxyethylene sterol scale, polyoxyethylene lanolin derivative, sulphur-based condensate Ethylene oxide derivative, polyoxyethylene polylactic acid propylene block copolymer, polyoxyethylene oxypropylene sulphide light, etc.; polyoxyethylene glycerin fatty acid, polyoxyethylene sorbitan Alcoholic liver fat, polyoxyethylene sorbitan fatty acid §, polyoxyethylene fatty acid burning (tetra) amine sulfate, etc. Polyethylene glycol fatty acid ester, ethylene two 97104568 200848451 alcohol fatty acid ester, fatty acid monoglycolic anhydride fatty acid 3, propane II 14 (four): glyceryl fatty acid ester, sorbose compound. An ether vinegar type such as a fatty acid vinegar such as a compound having the following structure of an intercalated polyoxyethylene polyoxypropylene smear copolymer: Bovine case - (X'(Y,)m-(X,)n- (wherein, lanthanide Refers to -CH2CH2〇-shows Fu·v, and 4b Γ shows the base; ! means the number of the second 90 = ((5) 〇 - refers to the value of 90 ~ 90.), the value of ^ 10~99; η Preferred examples among the above are, for example, a polyoxypropylene-promoting copolymer, a polyoxyethylene pit, a polyoxyethylene diglyceride fatty acid vinegar, a polyoxyethylene, a mountain, a breast milk, a base, and a polyoxygen. Ethyl sorbitan fatty acid ester and the like may be used alone or in combination with the above-mentioned available amount. 200 parts by weight. ί has been used in 100 parts by weight, usually 2 · 2 · 2 · surfactants == = agent system can be, for example, a non-ionic interface, etc., especially such as u agent, two Surfactant ^ ® agent, polyoxonated surfactant, polydecane 糸 surfactant, 蜊 为 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , / Tongue agent, polyfluorene-based surfactant is preferred. The surfactant used in the use of 旦 #上" 丨王片J苟佳里 is relative to the obtained lanthanide polymer 1〇〇97104568 200848451 ^ 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 The formation of the insulating film) includes a step of applying the film-forming composition onto a substrate, a step of forming the main film, and a step of applying a curing treatment to the coating film. The substrate to which the film-forming composition is applied may, for example, be a Si-containing layer such as Si, Si 2 or (SiM SiC or SiCN. A method of applying a film-forming composition to the group + may be used, for example. Coating means such as spin coating, dipping method, roll coating method, spray coating method, etc. After coating the substrate with the film-forming composition, the solvent is removed to form a coating film. The thickness of the film is 〇〇5~25#m, and the thickness of the second application is 涂.Bu 5. 〇# m coating film. Then, the obtained coating film is hardened. The treatment can form a cerium oxide film. The curing treatment is performed by a high-energy line irradiation plasma treatment such as heating, electron beam or ultraviolet ray, and a combination thereof, preferably by heat treatment or high-energy line irradiation. When hardening by heating, the coating film is heated to 80 to 450 ° C in an inactive environment or under reduced pressure (preferably 30 (TC to 450 〇.) heating at this time, the method can be used, for example: heating Plate, oven, high temperature furnace, etc., and heating ring; environment can be in an inactive environment, or under reduced pressure Further, in order to control the curing rate of the coating film, it may be subjected to stepwise heating or optionally in an environment such as nitrogen, air, oxygen, or reduced pressure, if necessary. Manufacture of ceramide film. 97104568 42 200848451 4. Cerium oxide film The present invention - the oxidized cerium oxide according to the embodiment is particularly suitable for use in, for example, (3), system because it belongs to a low dielectric system and has excellent surface flatness. An interlayer insulating film for a semiconductor element such as LSI, D_, SDRAM, RDRAM, or D_RDRAM, and is applicable to, for example, a surface stop film, a surface coating protective film for a semiconductor element, an intermediate layer of a semiconductor fabrication step using a multilayer photoresist, The interlayer insulating film of the multilayer wiring board, the protective film for the liquid crystal display element, the insulating film, etc. The magnet dioxide film of the present embodiment can be used for a semiconductor device including a copper damascene process. The oxygen cut film system dielectric f number is preferably from 2.5 to 15.0 GPa, more preferably from 3.0 to 12 0 GPa, and the film density is most from 0.1 to 1.3 g/crn3, particularly preferably from 0.8 to 1.27 g/cm3. According to the condition ', the organic cerium oxide film of the present invention is excellent in mechanical properties, chemical resistance, and low dielectric constant, etc. ^ 5. Embodiments Hereinafter, the present invention is implemented. The present invention is not limited to the following examples. In addition, the "parts" and "%" in the examples and comparative examples are respectively referred to as "parts by weight" and unless otherwise stated. "% by mass." Stomach ^ 5. 1. Evaluation method Various evaluations were carried out as follows. In addition, a polymer film (cerium oxide film) formed by the following method was used for the elastic modulus and the drug resistance. The composition obtained in each of the examples and the comparative example 97104568 43 200848451 was applied to the Shixi wafer by spin coating, and then the substrate was dried at 90 ° C for 3 minutes on a hot plate. In a nitrogen atmosphere, the film was dried at 200 ° C for 3 minutes, and the substrate was fired in a nitrogen atmosphere at 400 ° C for 6 minutes to obtain a film thickness of 5 〇〇 # m polymer film. And using the polymer film for the above Kind of assessment. 5· 1· 1. Dielectric constant measurement, Δ k On a pair of n-type Nissin wafers having a resistivity of 0·1 Ω·cm or less, p is applied by spin coating to form a film-forming composition. And drying on a hot plate at 90 ° C for 3 minutes, followed by nitrogen in a nitrogen atmosphere. (: 3 minutes of dry distillation was carried out, and the film was fired under a reduced pressure of 50 mTorr (vacuum atmosphere) in a vertical high-temperature furnace of 42 ° C for 1 hour to obtain a film. On the obtained film, an aluminum electrode pattern was formed by a steaming method. For the sample, a sample for measuring the dielectric constant was prepared. For this sample, a temperature of 1 kHz was used, and an HP16451B electrode and an HP4284A dielectric analyzer LCR meter manufactured by Agilent Co., Ltd. were used, and the room temperature was measured according to the CV method (24. With 2〇(rc) (the dielectric constant of the film. △k is at room temperature (_, side Hit a@RT), and the dielectric constant (10) measured under 2GG C, dry nitrogen environment〇〇 The difference between the daytimes (^k = k@RT-k@2〇(rc). Using this Ak, it is mainly possible to estimate the amount of increase in dielectric constant caused by moisture absorption. Usually, if Ak reaches: 〇 ·15 or more, it is an organic cerium oxide film with high hygroscopicity. 5·1·2· Evaluation of the elastic modulus of the film (Y〇ung rati〇), and the elastic modulus of the film is measured by the continuous rigidity measurement method. 1·3·Resistance 97104568 44 200848451 An 8-inch wafer of ruthenium dioxide film is formed at room temperature in a 2% dilute hydrofluorok K solution. After 1 minute of collapse, the film thickness of the cerium oxide film before and after the immersion was observed. If the residual film rate as defined below was 99% or more, the drug resistance was judged to be good. Residual film rate (%) = ( Film thickness after impregnation) + (film thickness before impregnation) xl00 A: Residual film rate of 99% or more B: Residual film rate less than 99% 5. 5 · 4 · Weight average molecular weight Mw , the number average molecular weight, the molecular weight distribution, the weight average molecular weight (M w) and the number average molecular weight (Μη) of the Mw/Mn hydrolysis condensate, which were subjected to a molecular sieve chromatography method according to the following conditions: concentration 1 Omm〇1 / L of LiBr-IhPO4 in 2-methoxyethanol solution, using solvent as solvent, and dissolving the hydrolysis condensate 〇lg in i〇〇cc iiOiMol/DaiBr-hPO4) 2-methoxyethanol In the solution, the standard sample was prepared by using WAK0 Co., Ltd., and polyethylene oxide was used. t: Using Tosoh Co., Ltd., high-speed Gpc device HLC-8120GPC). Column: used by Tosoh Co., Ltd. tSK—gel, pER AWM-H (length 15 cm), three sets of devices in series. Measurement temperature: 40 ° C Flow rate: 0. 6 ml / mi n· 97104568 45 200848451 Detector: Detected by RI built in Tosoh Co., Ltd., high-speed GPC device (model HLC-8120GPC). Further, the dispersion of molecular weight distribution is calculated by Mw/Mn. Small ' indicates that the molecular weight distribution is closer to the normal distribution. 5·2·Production of film-forming composition 5·2· 1. Synthesis Example 1 In a quartz three-necked flask equipped with a condenser, a solution (2): 1〇% p tetrapropylammonium hydroxide aqueous solution 69.93 g Ultrapure water I22.96g, and ethanol 235.73g, and dissolved. Next, the solution (1): 46.20 g of methyltrimethoxydecane and tetraethoxydecane 3 (h28g, having a structure represented by the following formula (7), wherein η means a value of 1 or more) A mixed solution of carbon hexane (Mw=8 〇〇) 7.96 g and 192.87 g of ethanol was filled in a dropping funnel, and the solution was stirred at 60 ° C while the solution was dropped for 3 hours. Thereafter, stirring was continued for 3 hours at 60° C. After cooling the reaction mixture to room temperature, propylene glycol monopropyl ether 669·57 g and 20% aqueous acetic acid solution (30·43 g were added. The reaction solution was concentrated under reduced pressure. The film formation composition 1 was obtained until the solid concentration reached 10%. [Chemical 3]

••…(7) 5 · 2 · 2.比較合成例1 燒瓶中,秤取溶液(1 ):甲基 在具備冷凝器之石英製三口 97104568 46 200848451 二甲氧基矽烷46· 20g、四乙氧基矽烷3〇· 28g、具有依下 式(7)所不結構之聚碳矽烷(Mw=8〇〇)7· 96g、及乙醇 192· 87g,並溶解。接著,將溶液(2):1〇%氳氧化四丙銨水 溶液69.93g、超純水122.96g、及乙醇235.73g的混合溶 ,液,填充於滴液漏斗中。一邊將溶液(1)在60°C下進行攪 拌,一邊將溶液(2)歷時3小時滴下後,在60它下持續攪 拌3小時。將反應液冷卻至室溫後,添加丙二醇單丙醚 p 669.57g、及20%醋酸水溶液3〇 43g。將該反應液於減壓 下施行濃縮,直到固形份濃度達1〇%為止,獲得膜形成用 組成物2。 5 · 2 · 3.比較合成例2 在具備冷凝器之石英製三口燒瓶中,秤取溶液(1):甲基 三曱氧基矽烷46· 20g、四乙氧基矽烷30· 28g、具有依下 式(7)所示結構之聚碳矽烷(Mw=800)7· 96g、及乙醇 192· 87g,並溶解。接著,調製溶液(2) :10%氫氧化四丙錢 ( 水溶液69· 93g、超純水122· 96g、及乙醇235· 73g的混合 溶液。一邊將溶液(1)在6 0 °C下進行擾拌,一邊將溶液(2) 一次全部添加後,在60°C下持續攪拌6小時。將反應液 冷卻至室溫後,添加丙二醇單丙醚6 6 9 · 5 7 g、及2 0 %醋酸 ; 水溶液30· 43g。將該反應液於減壓下施行濃縮,直到固 : 形份濃度達10%為止,獲得膜形成用組成物3。 5· 2· 4.合成例2 在具備冷凝器之石英製三口燒瓶中,秤取溶液(2):經溶 解著r-丁内酯264.37g與草酸0.37g的離子交換水 97104568 47 200848451 並溶解。接著’將溶液⑴:使甲基三乙氧 =lg、四甲氧基錢47.36g、及具有依下式⑻(式中 =外所讀字係指各單元的組成比)所示結構之聚碳石夕 炫(Mw=l_)26.15g,溶解於甲基異丁 _ 216為中的容 液,填充於滴液漏斗中。將溶液⑵一邊在肌下進㈣ 拌,-邊將溶液⑴歷時2小時滴下後,纟肌下持續攪 拌3小時。再添加丙二醇單乙驗!㈣為,並將反應液 冷部至室溫後,再於減壓下施行濃縮,直到固形份濃度達 10%為止,獲得膜形成用組成物4。 [化4]••...(7) 5 · 2 · 2.Comparative Synthesis Example 1 In the flask, the solution was weighed (1): the methyl group was made of quartz with a condenser. 97104568 46 200848451 Dimethoxydecane 46·20g, tetraethyl Oxydecane 3〇·28g, polycarbane (Mw=8〇〇) 7·96g, and 192·87g of ethanol, which are not structured according to the following formula (7), are dissolved. Next, a mixed solution of 69.93 g of a solution (2): 1% hydrazine oxidized tetrapropylammonium chloride solution, 122.96 g of ultrapure water, and 235.73 g of ethanol was placed in a dropping funnel. While the solution (1) was stirred at 60 ° C, the solution (2) was dropped over 3 hours, and stirring was continued for 3 hours at 60 °C. After cooling the reaction solution to room temperature, 669.57 g of propylene glycol monopropyl ether and 43 g of a 20% aqueous acetic acid solution were added. The reaction mixture was concentrated under reduced pressure until the solid portion concentration was 1% to obtain the composition 2 for film formation. 5 · 2 · 3. Comparative Synthesis Example 2 In a quartz three-necked flask equipped with a condenser, a solution (1) was obtained: methyl trimethoxy decane 46·20 g, tetraethoxy decane 30·28 g, and Polycarbane (Mw = 800) 7 · 96 g of the structure represented by the following formula (7), and 192. 87 g of ethanol were dissolved. Next, a solution (2): a mixed solution of 10% tetrapropylene hydroxide (69.93 g of an aqueous solution, 122.96 g of ultrapure water, and 235 g of ethanol) was prepared. The solution (1) was further dried at 60 ° C. After stirring, the solution (2) was added all at once, and stirring was continued for 6 hours at 60 ° C. After cooling the reaction solution to room temperature, propylene glycol monopropyl ether 6 6 9 · 5 7 g, and 20% were added. Acetic acid; 30. 43 g of an aqueous solution. The reaction solution was concentrated under reduced pressure until a solid concentration of the component was 10% to obtain a film-forming composition 3. 5·2· 4. Synthesis Example 2 Having a condenser In a quartz three-necked flask, the solution (2) was obtained by dissolving 264.37 g of r-butyrolactone and 0.37 g of oxalic acid in ion exchange water 97104568 47 200848451 and then dissolving. Then, 'solution (1): methyl triethoxy = lg, tetramethoxy money 47.36g, and having a structure represented by the following formula (8) (wherein the external reading refers to the composition ratio of each unit), the carbon stone Xi Hyun (Mw = l_) 26.15g, The solution dissolved in methyl isobutyl _ 216 is filled in the dropping funnel. The solution (2) is mixed under the muscle (4), and the solution (1) is over 2 After the hour is dripped, the mixture is continuously stirred for 3 hours under the diaphragm. Then add propylene glycol monoethylate test (4), and the reaction solution is cooled to room temperature, and then concentrated under reduced pressure until the solid concentration reaches 10%. The film formation composition 4 was obtained. [Chemical 4]

.....(8) 5· 2· 5·比較合成例3 ί; 一在具備冷凝器之石英製三口燒瓶中,秤取溶液(1):曱基 二乙氧基矽烷57· 51g、四曱氧基矽烷47· 36g、具有依上 式(8)所示結構之聚碳矽烷(Mw:=1〇〇〇)26· 15g、及曱基異丁 酮216· 30g,並溶解。接著,調製溶液(2):使^ — 丁内酯 :264.37g與草酸0·37δ溶解於離子交換水87.74g中的溶 :液。一邊將溶液(1)在55它下進行攪拌,一邊將溶液(2) 一次全部添加後,在55它下持續攪拌5小時。再添加丙 二醇單乙醚105(K23g,並將反應液冷卻至室溫後,再於 減壓下施行濃縮,直到固形份濃度達i 〇%為止,獲得膜形 97104568 48 200848451 成用組成物5。 5. 2. 6.合成例3 在具備冷凝為之石央製三口燒瓶中’添加溶液(2 )·丙一 醇單乙醚85.2lg、離子交換水132· 82g、及四(乙酿基丙 酮)鈦O.Ollg,並於5(TC下進行攪拌。接著,將溶液(1): 二甲基二甲氧基矽烷26· 62g、甲基三甲氧基石夕烧 75· 37g、四曱氧基矽烷50· 54g、具有依下式(9)所示結構 (式中’ η係指1以上的數值)的聚碳石夕炫 (Mw=840)42· 64g、及丙二醇單乙醚242· 52g之溶液,填充 於滴液漏斗中。一邊將溶液(2)在溫度50°C下進行授摔, 一邊將溶液(1)歷時2小時滴下後,再於5〇〇c下進行2小 時反應,添加丙二醇單乙醚1021· 74g,並將反應液冷卻 至至溫。將该反應液於減壓下施行濃縮,直到固形份濃度 達10%為止’獲得膜形成用組成物6。 [化5]..... (8) 5· 2· 5·Comparative Synthesis Example 3 ί; In a quartz three-necked flask equipped with a condenser, weighed a solution (1): decyl diethoxy decane 57 · 51 g, Tetramethoxy decane 47·36 g, polycarbane (Mw: 1 〇〇〇) 26·15 g having a structure represented by the above formula (8), and decyl isobutyl ketone 216·30 g were dissolved. Next, the solution (2) was prepared: a solution of 264.37 g of succinyl lactone and oxalic acid 0·37 δ dissolved in 87.74 g of ion-exchanged water. While the solution (1) was stirred under 55, the solution (2) was added all at once, and stirring was continued at 55 for 5 hours. Further, propylene glycol monoethyl ether 105 (K23 g was added, and the reaction liquid was cooled to room temperature, and then concentrated under reduced pressure until the solid concentration reached i 〇% to obtain a film-form 97104568 48 200848451 composition 5. 2. Synthesis Example 3 In the three-necked flask containing the condensed stone, 'addition solution (2) · propanol monoethyl ether 85.2 lg, ion exchange water 132 · 82 g, and tetrakis (ethyl acetonate) titanium O.Ollg, and stirred at 5 (TC). Next, the solution (1): dimethyldimethoxydecane 26·62 g, methyltrimethoxysulfate 75.37 g, tetradecyloxydecane 50 54g, a solution having a structure represented by the following formula (9) (wherein η means a value of 1 or more), a solution of polycarbazide (Mw=840) 42·64 g, and propylene glycol monoethyl ether 242·52 g, The solution was filled in a dropping funnel, and while the solution (2) was dropped at a temperature of 50 ° C, the solution (1) was dropped for 2 hours, and then reacted at 5 ° C for 2 hours to add a propylene glycol single. Ether 1021·74g, and the reaction solution was cooled to the temperature. The reaction solution was concentrated under reduced pressure until the solid concentration reached 10%. Stop 'to obtain a film forming composition 6. [Formula 5]

ch3Ch3

Si——CH2 och3 .....(9) 5 · 2 · 7.比較合成例4 在具備冷凝器之石英製三口燒瓶中,將溶液(1):二曱基 一曱氧基矽烷26· 62g、曱基三甲氧基矽烷75· 37g '四曱 氧基矽烷50.54g、具有依上式(9)所示結構之聚碳矽烷 97104568 49 200848451 (Mw=840)42.64g、及丙二醇單乙醚242 52g的溶液,於 50 C下進行攪拌。接著,將溶液(2):丙二醇單乙醚 85.21g、離子交換水132 82g、及四(乙醯基丙酮)鈦 0· 01 lg進行混合,並填充於滴液漏斗中。一邊將溶液(1) 在/m度5 0 C下進行擾拌,一邊將溶液(2 )歷時2小時滴下 後,於50 C下進行2小時反應,添加丙二醇單乙醚 1021· 71g,並將反應液冷卻至室溫。將該反應液於減壓下 施行濃縮,直到固形份濃度達1〇%為止,獲得膜形成用組 I成物7。 5· 2· 8·合成备J 4 在具備冷嘁态之石英製三口燒瓶中,秤取溶液(2) · 氳氧化四丙銨水溶液72.25g、超純水I27.05g、及乙醇 228· 64g,並溶解。接著,將溶液(1):甲基三甲氧基矽烷 51· 34g、四乙氧基矽烷33· 65g、及乙醇187· 〇7g的混合 溶液,填充於滴液漏斗中。一邊將溶液(2)在6〇1下進行 t攪拌,一邊將溶液(1)歷時3小時滴下後,在6〇。〇:下持續 攪拌3小時。將反應液冷卻至室溫後,添加丙二醇單丙醚 669.57g、及20%醋酸水溶液3144g。將該反應液於減壓 下施行濃縮,直到固形份濃度達1〇%為止,獲得膜形成用 : 組成物8。 5 · 2 · 9 ·比較合成例5 在具備冷减裔之石英製三口燒瓶中,秤取溶液(1):曱基 三甲氧基矽烷51. 34g、四乙氧基矽烷33. 65g、及乙醇 187. 07g,並溶解。接著,將溶液(2):1〇%氫氧化四丙銨= 97104568 50 200848451 溶液72· 25g、超純水127· 05g、及乙醇228· 64g的混合溶 液,填充於滴液漏斗中。一邊將溶液(1)在6 0 °C下進行攪 拌,一邊將溶液(2)歷時3小時滴下後,在6 0 °C下持續擾 拌3小時。將反應液冷卻至室溫後,添加丙二醇單丙醚 669· 62g、及20%醋酸水溶液31· 44g。將該反應液於減壓 下施行濃縮’直到固形份濃度達1 〇 %為止,獲得膜形成用 組成物9。 [表1] 組成物 Mw Μη Mw/Mn 1 54,000 22,000 2. 45 2 ] 126,000 34,000 3. 71 3 88,〇〇〇 28,000 3. 14 4 12,000 6, 100 1. 97 5 14,〇〇〇 4, 700 2. 98 6 15,〇〇〇 7, 300 2. 05 7 16,000 5, 400 2.96 8 60,000 「27, 000 2. 22 9 98,〇〇〇 31,000 3. 16 5· 3·膜之形成(實施例1〜5及比較例u) I 將依各合成例所獲得的組成物,在8吋矽晶圓上利用旋 塗法施行塗佈,再於大氣中,於8{rc下施行5分鐘加熱, 接著再於氮下,依20(TC施行5分鐘加熱。更依照各例所 不方法實施交輪里,形成無色透明的膜。組成物與膜的 •评估結果係如表2所示。另外,交聯處理方法係採取熱處 -理或紫外線照射。熱處理與紫外線照射的順序係如下述。 5· 3· 1·熱處理 ^。 將所獲得的膜在真空下,依425。0施行1小時加熱。 97104568 51 200848451 5· 3. 2.紫外線照射 在氧分壓O.OlkPa的處理室内,於加熱板上,一邊將塗 膜依施行加熱’-邊照射紫外線。紫外線源係使用 含有波長25〇ηιη以下波長的白色紫外線。另外,因為該紫 外線係屬於白色紫外光,因而依有效方法將無法施行照度 的測定。Si - CH2 och3 ..... (9) 5 · 2 · 7. Comparative Synthesis Example 4 In a quartz three-necked flask equipped with a condenser, the solution (1): dimercapto-methoxydecane 26· 62 g, decyltrimethoxydecane 75·37 g 'tetradecyloxydecane 50.54 g, polycarbane 97104568 49 having a structure represented by the above formula (9) 200848451 (Mw=840) 42.64 g, and propylene glycol monoethyl ether 242 A 52 g solution was stirred at 50 C. Next, solution (2): 85.21 g of propylene glycol monoethyl ether, 132 82 g of ion-exchanged water, and titanium (meth)acetone 0·01 lg were mixed and filled in a dropping funnel. While the solution (1) was stirred at /50 ° C C, the solution (2) was dropped over 2 hours, and then reacted at 50 C for 2 hours, and propylene glycol monoethyl ether 1021·71 g was added, and the reaction was carried out. The solution was cooled to room temperature. The reaction solution was concentrated under reduced pressure until the solid portion concentration was 1%, to obtain a film forming composition. 5· 2· 8· Synthesis of J 4 In a quartz three-necked flask equipped with a cold state, weigh the solution (2) • 72.25 g of tetrapropylammonium hydroxide aqueous solution, ultra pure water I27.05 g, and ethanol 228·64 g And dissolve. Next, a mixed solution of the solution (1): methyltrimethoxydecane 51·34 g, tetraethoxydecane 33·65 g, and ethanol 187·〇7 g was placed in a dropping funnel. While the solution (2) was stirred at 6 Torr, the solution (1) was dropped for 3 hours and then at 6 Torr. 〇: Stir for 3 hours. After cooling the reaction mixture to room temperature, 669.57 g of propylene glycol monopropyl ether and 3144 g of a 20% aqueous acetic acid solution were added. The reaction solution was concentrated under reduced pressure until a solid concentration of 1% was obtained to obtain a composition for forming a film. 5 · 2 · 9 ·Comparative Synthesis Example 5 In a quartz three-necked flask equipped with a cold descent, weighed the solution (1): decyltrimethoxydecane 51.34 g, tetraethoxydecane 33.65 g, and ethanol 187. 07g, and dissolved. Next, a mixed solution of the solution (2): 1% by weight of tetrapropylammonium hydroxide = 97104568 50 200848451 solution 72·25 g, ultrapure water 127·05 g, and ethanol 228·64 g was placed in a dropping funnel. While the solution (1) was stirred at 60 ° C, the solution (2) was dropped over 3 hours, and then the mixture was continuously stirred at 60 ° C for 3 hours. After cooling the reaction solution to room temperature, propylene glycol monopropyl ether 669.62 g and a 20% aqueous acetic acid solution of 31·44 g were added. The reaction solution was concentrated under reduced pressure until the solid concentration reached 1 〇% to obtain a film-forming composition 9. [Table 1] Composition Mw Μη Mw/Mn 1 54,000 22,000 2. 45 2 ] 126,000 34,000 3. 71 3 88, 〇〇〇 28,000 3. 14 4 12,000 6, 100 1. 97 5 14, 〇〇〇 4, 700 2. 98 6 15, 〇〇〇 7, 300 2. 05 7 16,000 5, 400 2.96 8 60,000 "27, 000 2. 22 9 98, 〇〇〇 31,000 3. 16 5 · 3 · Film formation (implementation Examples 1 to 5 and Comparative Examples u) I The composition obtained in each of the synthesis examples was applied by spin coating on an 8-inch wafer, and then heated in the atmosphere at 8 {rc for 5 minutes. Then, under nitrogen, heat is applied to the TC for 5 minutes. The film is colored in a uniform manner according to the method of each example. The evaluation results of the composition and the film are shown in Table 2. The cross-linking treatment method is heat-treated or ultraviolet-irradiated. The order of heat treatment and ultraviolet irradiation is as follows. 5·3·1·heat treatment^. The obtained film is subjected to vacuum for 1 hour at 425. Heating. 97104568 51 200848451 5· 3. 2. Ultraviolet irradiation in the treatment chamber of oxygen partial pressure O.OlkPa, on the heating plate, while heating the coating film Outside ultraviolet source having a wavelength based white 25〇ηιη ultraviolet wavelengths below. Further, since the ultraviolet light UV is white lines, and thus will not be implemented by an effective method of measuring illuminance.

比較例 實施例5 Ζ較例 5· 4·結果考察 同 ⑴實施例卜2與比較例卜2係、屬於塗膜的交聯處理 為利用熱燒成實施的例子。雖膜形成用組成物製造時各試 劑的使用量相同,但是含有水與觸媒的第2液、盘含有反 應原料之水解性料化合物的第丨㈣,其反應方式卻不 依實施例i所獲得的膜,因為屬於使用將含有水盘觸媒 的第2液(溶液⑵)㈣。c下施行授拌之情況τ,將含有 水解性料單體與水解性聚碳錢的第丨液(溶液⑴)滴 97104568 52 200848451 下於該第2液中,铁絲姓病、公y 行製作的膜,因而;理:;=_而以獲得的聚合物進 藥性優越的膜。 ;吸濕性低(△ k低)、且耐 \將所使用―形成用組成物’係屬於 液中而獲得者,所獲得的膜雖在_ 匕下將屬於同等級的介雷當 此外,比較例2所使用但吸濕性較高⑷高)。 水盥_的第h 1 用組成物,係屬於將含有 「、: :液一次全部添加於第1液中而獲得者。 此外’貫施例2盘比妨似q 〆 化並非採取熱燒成Γ而是使用紫=料施例的塗膜硬 從膜吸濕性的觀點,將出現相同的結^射貫施者’因此就 根據實施例3盥膏妳々,丨/ 从丄 在加鄉#下Γ 係使用將第1液(溶液⑴) 二授拌,-邊滴下第2液(溶液⑺) 吸濕性低、且耐藥性優越的膜η:,均屬於 ,較例6’得知使用將第二二 广而獲得膜形成用組成物所製成的臈’以及使用將;;: (溶液⑼滴下於第】液(溶液⑴)=用將弟2液 組成物所製成的膜,吸濕性較高。又仔之艇形成用 再者,實施例5與比較例7均屬於使用由 烧的矽烷化合物進行合成的組有:反夕 不良。此現象表示聚合物構成要#夕八賴的耐樂性均 就耐藥性的提升而言將屬重要。另外二:::夕烷-事’ 施例】,將含有水解性恤合物的第二一實 97104568 53 200848451 邊滴下於含有水與觸媒 低。另-方面,因為將第〗 中,所獲得膜的吸濕性較Comparative Example Example 5 ΖComparative Example 5·4·Results Investigations (1) Example 2 and Comparative Example 2 The crosslinking treatment belonging to the coating film is an example in which the firing is carried out by thermal baking. Although the amount of each reagent used in the production of the film-forming composition is the same, the second liquid containing water and the catalyst, and the second (four) containing the hydrolyzable compound of the reaction raw material in the disk, the reaction method is not obtained according to the example i. The film is a second liquid (solution (2)) (four) which will contain a water disk catalyst. In the case where the mixing is carried out under c, the third liquid containing the hydrolyzable monomer and the hydrolyzable polycarbohydrate (solution (1)) is dropped in the second liquid, the wire name is sick, the public line is The film thus produced, and thus, the film obtained by the method of obtaining a superior polymer drug property. ; low hygroscopicity (Δ k low), and resistance / use of the "formation composition" used in the liquid is obtained, the obtained film will belong to the same level of mediation under the _ 匕Comparative Example 2 was used but the hygroscopicity was high (4) high). The composition of the first h 1 of the leeches _ belongs to a person who will contain all of the ", :: liquids added to the first liquid at a time. In addition, the method of the second embodiment is like the formation of the sputum. Instead, the coating film using the purple coloring material is hard from the viewpoint of film hygroscopicity, and the same junction will appear. Therefore, according to Example 3, the 盥 丨 丄 丄 丄 丄#下Γ The first liquid (solution (1)) is used for mixing, and the second liquid (solution (7)) is dropped. The film η with low hygroscopicity and excellent drug resistance belongs to, and is compared with the case of Example 6'. It is known that the ruthenium produced by using the composition of the second film and the film forming composition, and the use thereof;;: (solution (9) dripped in the first liquid (solution (1)) = made with the composition of the liquid 2 The membrane has a high hygroscopicity. Further, in the formation of the boat, the examples 5 and 7 all belong to the group synthesized by the calcined decane compound: the anti-Early bad. This phenomenon indicates that the polymer constitutes # The octopus's endurance will be important in terms of the improvement of drug resistance. The other two::: 夕 烷 - 事 'examples, will contain hydrolyzed conjugate Eryi 97104568 53 200848451 The side drops are contained in water and the catalyst is low. On the other hand, because the film is more absorbent than the film obtained in the first

龄/丨 ”、、夺弟1液添加於第2液中而挥俨沾L 幸父例7,將可獲得吸濕性 =獲传的比 燒化合物是否使用聚碳#無關水解性石夕 發明的反應手法將屬有效Γ,賴的吸濕性改善方面,本 # 4 —由表1中的各臈形成用組成物之分子量測定并果 :° ’右知取一邊將含有水與觸媒的第2 仃加熱,一邊於苴中凉 液(2 ))知 、溶液⑴k方;,所二=生二燒化合物的第1液 低。相較於依照其他手法 Mw/Mn值較 方,得之水解縮合物顯之γ 關聯在未使聚合物整體八旦 刀 事將 的介電常數降低之事,^二下,能使膜 優異性。生之“,就此點而言,本發明亦可謂具 Ο 度優越電常:^明所獲得的二氧化梦系膜,機械強 層間絕緣臈。:而頗適用為諸如半導體元件等的 97104568 54Age / 丨", 夺 弟 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 , 幸 添加 幸 幸 幸 幸 幸 幸 幸 幸 幸 幸 幸 幸 幸 幸 幸 幸 幸 幸 幸 幸 幸 幸 幸 幸 幸 幸 幸 幸 幸 幸The reaction method will be effective, and the hygroscopic improvement is improved. This #4 is determined by the molecular weight of each of the ruthenium forming compositions in Table 1 and is: ° 'The right side will contain water and catalyst. The second crucible is heated, and the solution is (1) k square in the middle of the liquid cooling solution (2); the first liquid of the second = raw bi-combustion compound is low. Compared with the Mw/Mn value according to other methods, it is obtained. The gamma correlation of the hydrolysis condensate can reduce the dielectric constant of the polymer as a whole, and the film can be excellent. "In this regard, the present invention can also be said to have Ο Degrees of superior electricity often: ^ Ming obtained the dioxide dream film, mechanical strong interlayer insulation 臈. : quite suitable for use as a semiconductor component, etc. 97104568 54

Claims (1)

200848451 十、申請專利範圍: 1 ·種含石夕之聚合物之合成方法,係包括有:將含有從 (A)水解性矽烷單體與(B)水解性聚碳矽烷中選擇之至少】 •種水解性矽烷化合物的第1液,添加於含有水與觸媒的第 • 2液中,使該水解性矽烷化合物進行水解縮合的步驟。 2·如申請專利範圍第1項之含矽之聚合物之合成方 法,其中,當將上述第1液添加於上述第2液中之際,上 述第2液的溫度係40°C以上。 3·如申請專利範圍第1項之含矽之聚合物之合成方 法,其中,上述(A)水解性矽烷單體係選擇自下述一般式 (1)〜(3)所示化合物群組的矽烷化合物: RaSi(〇R1)4-a ......(1) (式中,R係指氫原子、氟原子或丨價有機基;Rl係指i 價有機基;a係指1〜3的整數); Si(0R2)4 ……(2) 〇 (式中,R2係指1價有機基); R3b(R40)3-bSi-(R7)d-Si (〇R5)3-cR6c ......(3) 〔式中,R3〜R6係相同或互異,分別表示i價有機基;b 與c係表示相同或互異的〇〜2數值;R7係表示氧原子、伸 *苯基或—(CH2)m—所示之基(其中,m係1〜6的整數);d係指 :〇 或 1〕。 4.如申請專利範圍第i項之含矽之聚合物之合成方 法,其中,上述(B)水解性聚碳矽烷係具有下述一般式(4) 所示結構單位的聚碳;5夕烧: 97104568 55 200848451 [化6]200848451 X. Patent application scope: 1 · A method for synthesizing a polymer containing Shixi, comprising: selecting at least one selected from the group consisting of (A) a hydrolyzable decane monomer and (B) a hydrolyzable polycarbane. The first liquid of the hydrolyzable decane compound is added to the second liquid containing water and a catalyst to hydrolyze and condense the hydrolyzable decane compound. 2. The method for synthesizing a ruthenium-containing polymer according to the first aspect of the invention, wherein the temperature of the second liquid is 40 ° C or higher when the first liquid is added to the second liquid. 3. The method for synthesizing a ruthenium-containing polymer according to the first aspect of the invention, wherein the (A) hydrolyzable decane mono-system is selected from the group consisting of the following general formulas (1) to (3); Decane compound: RaSi(〇R1)4-a (1) (wherein R is a hydrogen atom, a fluorine atom or a valence organic group; R1 is an i-valent organic group; a is a 1 An integer of ~3); Si(0R2)4 (2) 〇 (wherein R2 means a monovalent organic group); R3b(R40)3-bSi-(R7)d-Si(〇R5)3- cR6c (3) [wherein, R3 to R6 are the same or different from each other and represent an i-valent organic group; b and c represent the same or mutually different 〇~2 values; R7 represents an oxygen atom; a group represented by phenyl or -(CH2)m- (wherein m is an integer of 1 to 6); d means: hydrazine or 1]. 4. The method for synthesizing a ruthenium-containing polymer according to claim i, wherein the (B) hydrolyzable polycarbane has a polycarbon having a structural unit represented by the following general formula (4); : 97104568 55 200848451 [Chem. 6] .⑷ (式中,R8係指選擇自氨原 醯氧基、石黃酸基、甲錯酸其Λ Λ , 烧氧基、 Τ 3 0夂|、二亂甲磺酸基、 基、稀丙基及環氧丙基所構成群組的基;只9係 : 原子、經基、燒氧基、醯氧基4酸基、基、= 的rn":广基婦丙基及環氧丙基所構成群組 、:, 係 '相同或互異,表示選擇自*原子、羥基、 f氧基、醯氧基、魏基、甲賴基、三㈣續酸基、碳 =〜6的2㈣:芳香基、烯丙基、及環氧丙基所構成群組 、土, R係相同或互異,表示取代或非取代的亞甲 基、伸烧基、伸烯基、伸快基、伸芳基;χ、y、z分別表 示〇〜1〇,〇〇〇的數值,且滿足5<x+y+z< 10 000的條件)。 、5.如申請專利範圍第1項之含矽之聚合物之合成方 法,其中,上述水解性矽烷化合物係上述(A)水解性矽烷 單體與上述(B)水解性聚碳矽烷; 相對於上述(B)水解性聚碳矽烷的完全水解縮合物1〇〇 重量份,上述(A)水解性矽烷單體為1〜1〇〇()重量份。 6·如申請專利範圍第1項之含矽之聚合物之合成方 法,其中,上述觸媒係從鹼性化合物、酸性化合物、及金 屬螯合化合物中選擇之至少1種的化合物。 97104568 56 200848451 7 ·如申明專利範圍第β項之含石夕之聚合物之合成方 法,其中,上述鹼性化合物係下述一般式(5)所示之 化合物: ^ (XTX3X4N)gY ······(5) m u (式中,X、X2、X3、X4係指獨立的氫原子、碳數卜 的烷基、羥烷基、芳香基或芳烷基;γ係指翻原子或工〜 價陰離子性基;g係指1〜4的整數)。 8·如申請專利範圍第6項之含矽之聚合物之合成方 法’其中’上述酸性化合物係有機酸。 、9·如申請專利範圍第6項之含矽之聚合物之合成方 法,其中,上述金屬螯合化合物係下述一般 金屬螯合化合物: 以㈧所不之 R15eM(0R16)f.e ……⑹ 〔式中,R15係指螯合劑;Μ係指金屬原子;Ru係 2〜5的燒基、或碳數6〜2〇的芳香基;f係指金屬μ二 價;e係指1〜f的整數〕。 的原子 10. 一種含矽之聚合物,係依申請專利範 中任—項之方法進行合成。 ^1 ^9 n. 一種膜形成用組成物,係含有申請專利 之冬石々夕:¾ A » 萃已阁弟1 0項 夕之艰合物、與有機溶劑。 —種二氧化矽系膜之形成方法,係包括 利範圍第11項之膜形成用組成物塗佈於基·:明、 塗,的—步驟;以及對上述塗膜施行硬化處;的步騍而形成 種二氧化矽系膜,係依申請專利 氧化石夕系膜之形成方法而獲得。 ㈤弟12項之二 97104568 57 200848451 七、指定代表圖: (一) 本案指定代表圖為:無 (二) 本代表圖之元件符號簡單說明: • 無 八、本案若有化學式時,請揭示最能顯示發明特徵的化學式: RaSKORVa ······(1) Si(0R2)4 ……(2) R3b(R40)3-bSi-(R7)d~Si(0R5)3-〇R6c ……(3) 97104568 4(4) (wherein, R8 is selected from the group consisting of aminoproline, rhein, rhodamine, anthracene, alkoxy, Τ 30 夂 |, turbulent mesylate, propyl, propylene a group consisting of a group consisting of a glycidyl group and a group of epoxy propyl groups; only 9 series: atom, alkoxy group, alkoxy group, decyloxy group 4 group, group, rn": broad-based propyl group and epoxy propyl group The group, :, is 'identical or mutually different, indicating 2 (four) selected from * atom, hydroxyl group, foxy group, decyloxy group, Wei group, methyl group, tris (tetra) acid group, carbon = 〜6: The group consisting of an aromatic group, an allyl group, and an epoxy group is the same or different from each other, and represents a substituted or unsubstituted methylene group, a stretching group, an alkenyl group, a stretching group, and a stretching group. Base; y, y, z respectively represent the value of 〇~1〇, 〇〇〇, and satisfy the condition of 5<x+y+z<10 000). 5. The method for synthesizing a ruthenium-containing polymer according to the first aspect of the invention, wherein the hydrolyzable decane compound is the (A) hydrolyzable decane monomer and the (B) hydrolyzable polycarbosilane; The (B) hydrolyzable polycarbosilane complete hydrolysis condensate is used in an amount of 1 part by weight, and the (A) hydrolyzable decane monomer is 1 to 1 part by weight. 6. The method for synthesizing a ruthenium-containing polymer according to the first aspect of the invention, wherein the catalyst is at least one selected from the group consisting of a basic compound, an acidic compound, and a metal chelate compound. 97104568 56 200848451 7 - A method for synthesizing a polymer containing a compound of the seventh aspect of the invention, wherein the basic compound is a compound represented by the following general formula (5): ^ (XTX3X4N)gY ··· ···(5) mu (wherein X, X2, X3, X4 means an independent hydrogen atom, an alkyl group of a carbon number, a hydroxyalkyl group, an aryl group or an aralkyl group; γ means a turning atom or a work ~ valent anionic group; g means an integer of 1 to 4). 8. The method for synthesizing a ruthenium containing polymer according to item 6 of the patent application 'wherein' the above acidic compound is an organic acid. 9. The method for synthesizing a ruthenium-containing polymer according to claim 6, wherein the metal chelating compound is a general metal chelating compound: (8) R15eM(0R16)fe (6) 〔 In the formula, R15 means a chelating agent; hydrazine means a metal atom; Ru is a 2 to 5 alkyl group; or a carbon number 6 to 2 aryl group; f means a metal μ divalent; and e means 1 to f Integer]. Atom 10. A polymer containing ruthenium, which is synthesized according to the method of any of the patent applications. ^1 ^9 n. A film-forming composition containing the patented winter stone 々 :: 3⁄4 A » The collection of 10 brothers and the organic solvent. A method for forming a cerium oxide-based film, comprising the steps of: coating a film-forming composition of the eleventh aspect of the invention on a base: a coating; and performing a hardening on the coating film; The formation of a cerium oxide film is obtained according to the method for forming a patented oxidized cerium film. (5) Brother 12 items 97104568 57 200848451 VII. Designated representative drawings: (1) The representative representative of the case is: None (2) The symbolic symbol of the representative figure is simple: • No. 8. If there is a chemical formula in this case, please reveal the most Chemical formula showing the characteristics of the invention: RaSKORVa ······(1) Si(0R2)4 (2) R3b(R40)3-bSi-(R7)d~Si(0R5)3-〇R6c ...... (3) 97104568 4
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