WO2008093512A1 - 多結晶シリコン、多結晶シリコン基体およびその製造方法、ならびに多結晶シリコン基体を用いた光電変換素子 - Google Patents

多結晶シリコン、多結晶シリコン基体およびその製造方法、ならびに多結晶シリコン基体を用いた光電変換素子 Download PDF

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Publication number
WO2008093512A1
WO2008093512A1 PCT/JP2008/050091 JP2008050091W WO2008093512A1 WO 2008093512 A1 WO2008093512 A1 WO 2008093512A1 JP 2008050091 W JP2008050091 W JP 2008050091W WO 2008093512 A1 WO2008093512 A1 WO 2008093512A1
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WIPO (PCT)
Prior art keywords
polycrystal silicon
silicon base
photoelectric conversion
conversion element
base
Prior art date
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PCT/JP2008/050091
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English (en)
French (fr)
Inventor
Ryuichi Oishi
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Sharp Kabushiki Kaisha
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Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Publication of WO2008093512A1 publication Critical patent/WO2008093512A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

　窒素ドープされた多結晶シリコンおよび該多結晶シリコンからなる多結晶シリコン基体が提供される。好ましくは、該多結晶シリコンは、赤外吸収スペクトルにおいて、９６３±５ｃｍ-1および／または９３８±５ｃｍ-1の波数位置にピークを有する。また、窒素含有シリコン融液を調製する工程を含む多結晶シリコン基体の製造方法、および該基体を用いた光電変換素子が提供される。窒素ドープされた多結晶シリコン基体を用いた光電変換素子は、従来と比較して変換効率が高く、コストパフォーマンスが高い。
PCT/JP2008/050091 2007-01-31 2008-01-09 多結晶シリコン、多結晶シリコン基体およびその製造方法、ならびに多結晶シリコン基体を用いた光電変換素子 WO2008093512A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007021476A JP2008184376A (ja) 2007-01-31 2007-01-31 多結晶シリコン、多結晶シリコン基体およびその製造方法、ならびに多結晶シリコン基体を用いた光電変換素子
JP2007-021476 2007-01-31

Publications (1)

Publication Number Publication Date
WO2008093512A1 true WO2008093512A1 (ja) 2008-08-07

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PCT/JP2008/050091 WO2008093512A1 (ja) 2007-01-31 2008-01-09 多結晶シリコン、多結晶シリコン基体およびその製造方法、ならびに多結晶シリコン基体を用いた光電変換素子

Country Status (2)

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JP (1) JP2008184376A (ja)
WO (1) WO2008093512A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012001379A (ja) * 2010-06-15 2012-01-05 Sharp Corp 太陽電池モジュール、シリコンリボンの製造方法および球状シリコンの製造方法
JP5666974B2 (ja) * 2011-04-21 2015-02-12 株式会社東芝 半導体材料を用いた太陽電池

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0251493A (ja) * 1988-08-11 1990-02-21 Osaka Titanium Co Ltd シリコン鋳造装置
JPH1168109A (ja) * 1997-08-26 1999-03-09 Matsushita Electric Ind Co Ltd 多結晶薄膜の製造方法及び薄膜トランジスタの製造方法
JP2000001308A (ja) * 1998-06-15 2000-01-07 Sharp Corp 多結晶シリコン鋳塊の製造方法及びその製造装置
JP2001516324A (ja) * 1997-03-04 2001-09-25 アストロパワー，インコーポレイテッド 柱状結晶粒状多結晶太陽電池基材及び改良された製造方法
JP2002137995A (ja) * 2000-10-30 2002-05-14 Mitsubishi Materials Silicon Corp 多結晶シリコン及びこれを用いたシリコン単結晶の製造方法
JP2004186320A (ja) * 2002-12-02 2004-07-02 Jsr Corp シリコン膜形成用組成物および太陽電池
JP2004296161A (ja) * 2003-03-26 2004-10-21 Shin Etsu Chem Co Ltd 珪素の導電性物質被覆物及びその製造方法並びに非水電解質二次電池用負極材
WO2007010622A1 (ja) * 2005-07-22 2007-01-25 Kyocera Corporation 多結晶シリコン基板及びその製造方法、並びに光電変換素子及び光電変換モジュール

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0251493A (ja) * 1988-08-11 1990-02-21 Osaka Titanium Co Ltd シリコン鋳造装置
JP2001516324A (ja) * 1997-03-04 2001-09-25 アストロパワー，インコーポレイテッド 柱状結晶粒状多結晶太陽電池基材及び改良された製造方法
JPH1168109A (ja) * 1997-08-26 1999-03-09 Matsushita Electric Ind Co Ltd 多結晶薄膜の製造方法及び薄膜トランジスタの製造方法
JP2000001308A (ja) * 1998-06-15 2000-01-07 Sharp Corp 多結晶シリコン鋳塊の製造方法及びその製造装置
JP2002137995A (ja) * 2000-10-30 2002-05-14 Mitsubishi Materials Silicon Corp 多結晶シリコン及びこれを用いたシリコン単結晶の製造方法
JP2004186320A (ja) * 2002-12-02 2004-07-02 Jsr Corp シリコン膜形成用組成物および太陽電池
JP2004296161A (ja) * 2003-03-26 2004-10-21 Shin Etsu Chem Co Ltd 珪素の導電性物質被覆物及びその製造方法並びに非水電解質二次電池用負極材
WO2007010622A1 (ja) * 2005-07-22 2007-01-25 Kyocera Corporation 多結晶シリコン基板及びその製造方法、並びに光電変換素子及び光電変換モジュール

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