WO2008090969A1 - 有機半導体コンポジット、有機トランジスタ材料ならびに有機電界効果型トランジスタ - Google Patents

有機半導体コンポジット、有機トランジスタ材料ならびに有機電界効果型トランジスタ Download PDF

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Publication number
WO2008090969A1
WO2008090969A1 PCT/JP2008/051032 JP2008051032W WO2008090969A1 WO 2008090969 A1 WO2008090969 A1 WO 2008090969A1 JP 2008051032 W JP2008051032 W JP 2008051032W WO 2008090969 A1 WO2008090969 A1 WO 2008090969A1
Authority
WO
WIPO (PCT)
Prior art keywords
organic
transistor
field effect
semiconductor composite
effect transistor
Prior art date
Application number
PCT/JP2008/051032
Other languages
English (en)
French (fr)
Inventor
Seiichiro Murase
Yukari Jo
Jun Tsukamoto
Junji Mata
Original Assignee
Toray Industries, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Industries, Inc. filed Critical Toray Industries, Inc.
Priority to CN2008800031799A priority Critical patent/CN101589482B/zh
Priority to KR1020097016665A priority patent/KR101415365B1/ko
Priority to EP08703859.2A priority patent/EP2109162B1/en
Priority to US12/524,714 priority patent/US8441002B2/en
Priority to JP2008510938A priority patent/JP5515290B2/ja
Publication of WO2008090969A1 publication Critical patent/WO2008090969A1/ja

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)

Abstract

　特定のチオフェン化合物とカーボンナノチューブを含有する有機半導体コンポジットにより、インクジェットなどの塗布プロセスで製膜可能であって、高い電荷移動度を有し、大気中においても高いオンオフ比を維持することができる有機半導体コンポジット、有機トランジスタ材料ならびに有機電界効果型トランジスタを提供する。
PCT/JP2008/051032 2007-01-26 2008-01-25 有機半導体コンポジット、有機トランジスタ材料ならびに有機電界効果型トランジスタ WO2008090969A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN2008800031799A CN101589482B (zh) 2007-01-26 2008-01-25 有机半导体复合材料、有机晶体管材料以及有机场效应晶体管
KR1020097016665A KR101415365B1 (ko) 2007-01-26 2008-01-25 유기 반도체 콤포지트, 유기 트랜지스터 재료 및 유기 전계 효과형 트랜지스터
EP08703859.2A EP2109162B1 (en) 2007-01-26 2008-01-25 Organic semiconductor composite, organic transistor material and organic field effect transistor
US12/524,714 US8441002B2 (en) 2007-01-26 2008-01-25 Organic semiconductor composite, organic transistor material and organic field effect transistor
JP2008510938A JP5515290B2 (ja) 2007-01-26 2008-01-25 有機半導体コンポジット、有機トランジスタ材料ならびに有機電界効果型トランジスタ

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2007-016228 2007-01-26
JP2007016228 2007-01-26
JP2007126371 2007-05-11
JP2007-126371 2007-05-11
JP2007-186681 2007-07-18
JP2007186681 2007-07-18
JP2007186680 2007-07-18
JP2007-186680 2007-07-18

Publications (1)

Publication Number Publication Date
WO2008090969A1 true WO2008090969A1 (ja) 2008-07-31

Family

ID=39644543

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/051032 WO2008090969A1 (ja) 2007-01-26 2008-01-25 有機半導体コンポジット、有機トランジスタ材料ならびに有機電界効果型トランジスタ

Country Status (7)

Country Link
US (1) US8441002B2 (ja)
EP (1) EP2109162B1 (ja)
JP (1) JP5515290B2 (ja)
KR (1) KR101415365B1 (ja)
CN (1) CN101589482B (ja)
TW (1) TWI428331B (ja)
WO (1) WO2008090969A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010225974A (ja) * 2009-03-25 2010-10-07 Toray Ind Inc 有機半導体コンポジットおよびそれを用いた有機電界効果型トランジスタ
KR101052357B1 (ko) * 2009-01-22 2011-07-27 한국화학연구원 신규한 폴리티오펜 유도체 및 이를 이용한 유기박막트랜지스터
JP2012049172A (ja) * 2010-08-24 2012-03-08 Seiko Epson Corp 成膜用インク、成膜方法、液滴吐出装置、発光素子の製造方法、発光素子、発光装置および電子機器
US8956740B2 (en) 2010-08-24 2015-02-17 Seiko Epson Corporation Film-forming ink, film-forming method, liquid droplet discharging device, method for preparing light-emitting element, light-emitting element, light-emitting device and electronic apparatus
KR20160001895A (ko) 2014-06-27 2016-01-07 동국대학교 산학협력단 탄소나노튜브 유기반도체, 이를 포함한 박막트랜지스터, 이를 이용한 화학센서 및 어플리케이션

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GB2428135B (en) * 2005-07-07 2010-04-21 Univ Surrey Improvements in thin film production
US8466460B2 (en) * 2009-06-05 2013-06-18 Basf Se Fused bithiophene-vinylene polymers
US8445893B2 (en) * 2009-07-21 2013-05-21 Trustees Of Columbia University In The City Of New York High-performance gate oxides such as for graphene field-effect transistors or carbon nanotubes
US8164089B2 (en) * 2009-10-08 2012-04-24 Xerox Corporation Electronic device
JP5666474B2 (ja) * 2009-12-14 2015-02-12 出光興産株式会社 多環縮環化合物、及び、それを用いた有機薄膜トランジスタ
FR2959353A1 (fr) * 2010-04-22 2011-10-28 Commissariat Energie Atomique Dispositif electronique organique comprenant une couche favorisant la segregation verticale d'un materiau carbone present dans la couche active electriquement
US9257509B2 (en) 2010-12-21 2016-02-09 The Trustees Of Columbia University In The City Of New York Electrical devices with graphene on boron nitride
KR101835005B1 (ko) 2011-04-08 2018-03-07 삼성전자주식회사 반도체소자 및 그 제조방법
US9214258B2 (en) * 2012-12-06 2015-12-15 Xerox Corporation Semiconductor composites comprising carbon nanotubes and diketopyrrolopyrrole-thiophene based copolymers
CN103325943A (zh) 2013-05-16 2013-09-25 京东方科技集团股份有限公司 一种有机薄膜晶体管及其制备方法
JP6082927B2 (ja) * 2014-03-26 2017-02-22 富士フイルム株式会社 有機トランジスタ、化合物、非発光性有機半導体デバイス用有機半導体材料、有機トランジスタ用材料、非発光性有機半導体デバイス用塗布液、有機トランジスタの製造方法、有機半導体膜の製造方法、非発光性有機半導体デバイス用有機半導体膜、有機半導体材料の合成方法
CN108475642B (zh) * 2016-01-25 2021-07-27 东丽株式会社 n型半导体元件和互补型半导体器件及其制造方法以及使用其的无线通信设备
US20190203151A1 (en) * 2017-12-28 2019-07-04 Exxonmobil Research And Engineering Company Flat viscosity fluids and lubricating oils based on liquid crystal base stocks
KR102456902B1 (ko) * 2018-09-25 2022-10-21 도레이 카부시키가이샤 카본 나노튜브 복합체 및 그것을 사용한 분산액, 반도체 소자 및 그의 제조 방법, 그리고 반도체 소자를 사용한 무선 통신 장치 및 상품 태그

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JPH09241356A (ja) 1996-03-08 1997-09-16 Fuji Electric Co Ltd 有機分子配向薄膜とその製造方法
WO2003089515A1 (fr) * 2002-04-22 2003-10-30 Konica Minolta Holdings, Inc. Composition de semi-conducteur organique, element semi-conducteur organique et procede pour les produire
JP2005268550A (ja) * 2004-03-18 2005-09-29 Japan Science & Technology Agency 有機半導体及びそれを用いた半導体装置並びにそれらの製造方法
JP2005268582A (ja) * 2004-03-19 2005-09-29 Toray Ind Inc 重合体コンポジット
JP2006024908A (ja) 2004-06-10 2006-01-26 Konica Minolta Holdings Inc 有機半導体材料、有機半導体膜、有機薄膜トランジスタ、有機半導体膜の製造方法及び有機薄膜トランジスタの製造方法
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JP2006128601A (ja) 2004-10-01 2006-05-18 Konica Minolta Holdings Inc 有機半導体材料、有機半導体膜、有機半導体デバイス及び有機薄膜トランジスタ
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JP2006265534A (ja) 2005-02-22 2006-10-05 Toray Ind Inc 重合体コンポジット

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JPH09241356A (ja) 1996-03-08 1997-09-16 Fuji Electric Co Ltd 有機分子配向薄膜とその製造方法
WO2003089515A1 (fr) * 2002-04-22 2003-10-30 Konica Minolta Holdings, Inc. Composition de semi-conducteur organique, element semi-conducteur organique et procede pour les produire
EP1679752A1 (en) 2003-10-30 2006-07-12 Matsushita Electric Industrial Co., Ltd. Conductive thin film and thin-film transistor
JP2005268550A (ja) * 2004-03-18 2005-09-29 Japan Science & Technology Agency 有機半導体及びそれを用いた半導体装置並びにそれらの製造方法
JP2005268582A (ja) * 2004-03-19 2005-09-29 Toray Ind Inc 重合体コンポジット
JP2006024908A (ja) 2004-06-10 2006-01-26 Konica Minolta Holdings Inc 有機半導体材料、有機半導体膜、有機薄膜トランジスタ、有機半導体膜の製造方法及び有機薄膜トランジスタの製造方法
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See also references of EP2109162A4

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101052357B1 (ko) * 2009-01-22 2011-07-27 한국화학연구원 신규한 폴리티오펜 유도체 및 이를 이용한 유기박막트랜지스터
JP2010225974A (ja) * 2009-03-25 2010-10-07 Toray Ind Inc 有機半導体コンポジットおよびそれを用いた有機電界効果型トランジスタ
JP2012049172A (ja) * 2010-08-24 2012-03-08 Seiko Epson Corp 成膜用インク、成膜方法、液滴吐出装置、発光素子の製造方法、発光素子、発光装置および電子機器
US8956740B2 (en) 2010-08-24 2015-02-17 Seiko Epson Corporation Film-forming ink, film-forming method, liquid droplet discharging device, method for preparing light-emitting element, light-emitting element, light-emitting device and electronic apparatus
KR101899914B1 (ko) 2010-08-24 2018-09-18 세이코 엡슨 가부시키가이샤 성막용 잉크, 성막 방법, 액적 토출 장치, 발광 소자의 제조 방법, 발광 소자, 발광 장치 및 전자 기기
KR20160001895A (ko) 2014-06-27 2016-01-07 동국대학교 산학협력단 탄소나노튜브 유기반도체, 이를 포함한 박막트랜지스터, 이를 이용한 화학센서 및 어플리케이션

Also Published As

Publication number Publication date
EP2109162B1 (en) 2013-05-01
JP5515290B2 (ja) 2014-06-11
KR101415365B1 (ko) 2014-07-04
TW200838857A (en) 2008-10-01
TWI428331B (zh) 2014-03-01
CN101589482B (zh) 2011-11-30
US8441002B2 (en) 2013-05-14
CN101589482A (zh) 2009-11-25
EP2109162A1 (en) 2009-10-14
US20100102299A1 (en) 2010-04-29
EP2109162A4 (en) 2011-10-05
KR20090113285A (ko) 2009-10-29
JPWO2008090969A1 (ja) 2010-05-20

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