WO2008090666A1 - 積層型光電変換装置及びその製造方法 - Google Patents

積層型光電変換装置及びその製造方法 Download PDF

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Publication number
WO2008090666A1
WO2008090666A1 PCT/JP2007/072207 JP2007072207W WO2008090666A1 WO 2008090666 A1 WO2008090666 A1 WO 2008090666A1 JP 2007072207 W JP2007072207 W JP 2007072207W WO 2008090666 A1 WO2008090666 A1 WO 2008090666A1
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WO
WIPO (PCT)
Prior art keywords
photoelectric conversion
intermediate layer
laminate type
conversion layers
photoelectric converter
Prior art date
Application number
PCT/JP2007/072207
Other languages
English (en)
French (fr)
Inventor
Yoshiyuki Nasuno
Noriyoshi Kohama
Takanori Nakano
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Priority to US12/523,633 priority Critical patent/US8258596B2/en
Priority to EP07831937.3A priority patent/EP2110859B1/en
Publication of WO2008090666A1 publication Critical patent/WO2008090666A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

　光電変換層の間に中間層を設けて上記入射光量制御効果を得るとともに、中間層と半導体層の界面におけるキャリア再結合を低減し、光電変換効率を向上させた積層型光電変換装置及びその製造方法を提供する。 　本発明の積層型光電変換装置は、ｐｉｎ構造を有する複数のシリコン系光電変換層を重ねて備え、隣接する少なくとも一対の前記光電変換層は、窒化シリコンからなる中間層を挟持し、前記一対の前記光電変換層は、互いに電気的に接続されており、前記光電変換層の一部であり前記中間層と接するｐ型シリコン系半導体層は窒素原子を含有する。
PCT/JP2007/072207 2007-01-23 2007-11-15 積層型光電変換装置及びその製造方法 WO2008090666A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/523,633 US8258596B2 (en) 2007-01-23 2007-11-15 Stacked photoelectric conversion device and method for producing the same
EP07831937.3A EP2110859B1 (en) 2007-01-23 2007-11-15 Laminate type photoelectric converter and method for fabricating the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007012851A JP2008181965A (ja) 2007-01-23 2007-01-23 積層型光電変換装置及びその製造方法
JP2007-012851 2007-01-23

Publications (1)

Publication Number Publication Date
WO2008090666A1 true WO2008090666A1 (ja) 2008-07-31

Family

ID=39644244

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/072207 WO2008090666A1 (ja) 2007-01-23 2007-11-15 積層型光電変換装置及びその製造方法

Country Status (4)

Country Link
US (1) US8258596B2 (ja)
EP (1) EP2110859B1 (ja)
JP (1) JP2008181965A (ja)
WO (1) WO2008090666A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110120536A1 (en) * 2009-11-20 2011-05-26 Dapeng Wang Roughness control of a wavelength selective reflector layer for thin film solar applications
EP2356696A2 (en) * 2009-05-06 2011-08-17 Thinsilicon Corporation Photovoltaic cells and methods to enhance light trapping in semiconductor layer stacks
US20120042934A1 (en) * 2009-03-03 2012-02-23 Yoshiyuki Nasuno Laminated body having semiconductor layer and layer thickness measurement portion, and thin-film photoelectric conversion device and integrated thin-film solar cell having the same
EP2293347A3 (en) * 2009-09-02 2012-07-25 Kisco Photovoltaic device and method for manufacturing the same

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7655542B2 (en) 2006-06-23 2010-02-02 Applied Materials, Inc. Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device
US7875486B2 (en) 2007-07-10 2011-01-25 Applied Materials, Inc. Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning
EP2215652A4 (en) 2007-11-02 2011-10-05 Applied Materials Inc PLASMA TREATMENT BETWEEN DECISION PROCESSES
US8895842B2 (en) 2008-08-29 2014-11-25 Applied Materials, Inc. High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells
TW201030998A (en) 2008-10-23 2010-08-16 Alta Devices Inc Photovoltaic device
WO2010080446A2 (en) * 2008-12-19 2010-07-15 Applied Materials, Inc. Microcrystalline silicon alloys for thin film and wafer based solar applications
JP5283588B2 (ja) * 2008-12-26 2013-09-04 京セラ株式会社 太陽電池
CN102356474A (zh) * 2009-04-06 2012-02-15 应用材料公司 高效能薄膜硅太阳能电池的高品质透明导电氧化物-硅界面接触结构
US9691921B2 (en) 2009-10-14 2017-06-27 Alta Devices, Inc. Textured metallic back reflector
US9136422B1 (en) 2012-01-19 2015-09-15 Alta Devices, Inc. Texturing a layer in an optoelectronic device for improved angle randomization of light
US11271128B2 (en) 2009-10-23 2022-03-08 Utica Leaseco, Llc Multi-junction optoelectronic device
US20170141256A1 (en) 2009-10-23 2017-05-18 Alta Devices, Inc. Multi-junction optoelectronic device with group iv semiconductor as a bottom junction
US9502594B2 (en) 2012-01-19 2016-11-22 Alta Devices, Inc. Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from template layer and etching
US9768329B1 (en) 2009-10-23 2017-09-19 Alta Devices, Inc. Multi-junction optoelectronic device
US20150380576A1 (en) 2010-10-13 2015-12-31 Alta Devices, Inc. Optoelectronic device with dielectric layer and method of manufacture
TW201123481A (en) * 2009-12-29 2011-07-01 Auria Solar Co Ltd Solar cell and manufacturing method thereof
JP2011159858A (ja) * 2010-02-02 2011-08-18 Sony Corp 固体撮像装置およびその製造方法、電子機器
JP5525298B2 (ja) * 2010-03-18 2014-06-18 シャープ株式会社 導電性窒化シリコン膜の製造方法
WO2012102368A1 (ja) * 2011-01-27 2012-08-02 京セラ株式会社 太陽電池素子の製造方法、太陽電池素子、および太陽電池モジュール
US11038080B2 (en) 2012-01-19 2021-06-15 Utica Leaseco, Llc Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching
JP2014055111A (ja) * 2013-12-11 2014-03-27 Sharp Corp 導電性窒化シリコン膜、導電性窒化シリコン膜積層体、および光電変換装置
US10593818B2 (en) * 2016-12-09 2020-03-17 The Boeing Company Multijunction solar cell having patterned emitter and method of making the solar cell
KR101901068B1 (ko) * 2017-08-09 2018-09-20 고려대학교 산학협력단 탠덤태양전지소자
KR102322176B1 (ko) * 2018-08-23 2021-11-04 고려대학교 산학협력단 탠덤태양전지소자
KR102229748B1 (ko) * 2018-08-23 2021-03-18 고려대학교 산학협력단 탠덤태양전지소자

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003124481A (ja) 2001-10-11 2003-04-25 Mitsubishi Heavy Ind Ltd 太陽電池
JP2003347572A (ja) * 2002-01-28 2003-12-05 Kanegafuchi Chem Ind Co Ltd タンデム型薄膜光電変換装置とその製造方法
JP2004128083A (ja) * 2002-09-30 2004-04-22 Mitsubishi Heavy Ind Ltd タンデム型太陽電池
JP2004363580A (ja) * 2003-05-13 2004-12-24 Kyocera Corp 光電変換装置および光発電装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1321660C (en) * 1985-11-05 1993-08-24 Hideo Yamagishi Amorphous-containing semiconductor device with high resistivity interlayer or with highly doped interlayer
EP0607435B1 (en) * 1992-08-07 1999-11-03 Asahi Kasei Kogyo Kabushiki Kaisha Nitride based semiconductor device and manufacture thereof
JP2002270879A (ja) * 2001-03-14 2002-09-20 Mitsubishi Electric Corp 半導体装置
WO2005011001A1 (ja) * 2003-07-24 2005-02-03 Kaneka Corporation 積層型光電変換装置
DE102005013537A1 (de) * 2004-03-24 2005-10-20 Sharp Kk Fotoelektrischer Wandler und Herstellverfahren für einen solchen
JP4017648B2 (ja) * 2006-01-23 2007-12-05 シャープ株式会社 プラズマ処理装置および同装置により製造された半導体素子
JP2007201009A (ja) * 2006-01-24 2007-08-09 Fujifilm Corp 固体撮像素子
JP5305622B2 (ja) * 2006-08-31 2013-10-02 キヤノン株式会社 光電変換装置の製造方法
US8207010B2 (en) * 2007-06-05 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003124481A (ja) 2001-10-11 2003-04-25 Mitsubishi Heavy Ind Ltd 太陽電池
JP2003347572A (ja) * 2002-01-28 2003-12-05 Kanegafuchi Chem Ind Co Ltd タンデム型薄膜光電変換装置とその製造方法
JP2004128083A (ja) * 2002-09-30 2004-04-22 Mitsubishi Heavy Ind Ltd タンデム型太陽電池
JP2004363580A (ja) * 2003-05-13 2004-12-24 Kyocera Corp 光電変換装置および光発電装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2110859A4 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120042934A1 (en) * 2009-03-03 2012-02-23 Yoshiyuki Nasuno Laminated body having semiconductor layer and layer thickness measurement portion, and thin-film photoelectric conversion device and integrated thin-film solar cell having the same
US8962983B2 (en) * 2009-03-03 2015-02-24 Sharp Kabushiki Kaisha Laminated body having semiconductor layer and layer thickness measurement portion, and thin-film photoelectric conversion device and integrated thin-film solar cell having the same
EP2356696A2 (en) * 2009-05-06 2011-08-17 Thinsilicon Corporation Photovoltaic cells and methods to enhance light trapping in semiconductor layer stacks
EP2356696A4 (en) * 2009-05-06 2013-05-15 Thinsilicon Corp PHOTOVOLTAIC CELLS AND METHOD FOR REINFORCING LIGHT DETECTION IN SEMICONDUCTOR LAYERED TABLES
EP2293347A3 (en) * 2009-09-02 2012-07-25 Kisco Photovoltaic device and method for manufacturing the same
US20110120536A1 (en) * 2009-11-20 2011-05-26 Dapeng Wang Roughness control of a wavelength selective reflector layer for thin film solar applications

Also Published As

Publication number Publication date
EP2110859A1 (en) 2009-10-21
US20100059847A1 (en) 2010-03-11
JP2008181965A (ja) 2008-08-07
US8258596B2 (en) 2012-09-04
EP2110859A4 (en) 2010-07-14
EP2110859B1 (en) 2013-08-14

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