WO2008088298A1 - Procédé de fabrication de films minces de semi-conducteurs - Google Patents
Procédé de fabrication de films minces de semi-conducteurs Download PDFInfo
- Publication number
- WO2008088298A1 WO2008088298A1 PCT/UA2007/000005 UA2007000005W WO2008088298A1 WO 2008088298 A1 WO2008088298 A1 WO 2008088298A1 UA 2007000005 W UA2007000005 W UA 2007000005W WO 2008088298 A1 WO2008088298 A1 WO 2008088298A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- porous layer
- layer
- semiconductor substrate
- semiconductor
- electromagnetic radiation
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 457
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 289
- 230000005291 magnetic effect Effects 0.000 claims abstract description 141
- 238000000034 method Methods 0.000 claims abstract description 117
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 97
- 230000005684 electric field Effects 0.000 claims abstract description 25
- 230000009471 action Effects 0.000 claims abstract description 8
- 238000007743 anodising Methods 0.000 claims description 111
- 238000000137 annealing Methods 0.000 claims description 69
- 230000008569 process Effects 0.000 claims description 60
- 239000008151 electrolyte solution Substances 0.000 claims description 55
- 238000002048 anodisation reaction Methods 0.000 claims description 54
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 36
- 239000007789 gas Substances 0.000 claims description 36
- 230000006698 induction Effects 0.000 claims description 36
- 230000035882 stress Effects 0.000 claims description 33
- 238000000926 separation method Methods 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 25
- 239000011159 matrix material Substances 0.000 claims description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims description 16
- 239000001257 hydrogen Substances 0.000 claims description 16
- 238000002604 ultrasonography Methods 0.000 claims description 11
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- 230000010355 oscillation Effects 0.000 abstract description 7
- 230000003647 oxidation Effects 0.000 abstract description 6
- 238000007254 oxidation reaction Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 594
- 239000010408 film Substances 0.000 description 160
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 61
- 229910052710 silicon Inorganic materials 0.000 description 60
- 239000010703 silicon Substances 0.000 description 60
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 58
- 239000002344 surface layer Substances 0.000 description 58
- 230000015572 biosynthetic process Effects 0.000 description 48
- 229910052796 boron Inorganic materials 0.000 description 24
- 239000013078 crystal Substances 0.000 description 24
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 23
- 206010040844 Skin exfoliation Diseases 0.000 description 23
- 239000011148 porous material Substances 0.000 description 20
- 239000010409 thin film Substances 0.000 description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 17
- 230000003247 decreasing effect Effects 0.000 description 15
- 125000004429 atom Chemical group 0.000 description 13
- 238000010586 diagram Methods 0.000 description 13
- 239000012535 impurity Substances 0.000 description 13
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- 230000005611 electricity Effects 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- 230000005855 radiation Effects 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000005020 polyethylene terephthalate Substances 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
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- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- -1 poly ethylene terephthalate Polymers 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 235000019441 ethanol Nutrition 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000005266 casting Methods 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 208000036119 Frailty Diseases 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 206010003549 asthenia Diseases 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
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- 239000000356 contaminant Substances 0.000 description 1
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- 238000000151 deposition Methods 0.000 description 1
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- 238000005265 energy consumption Methods 0.000 description 1
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- 239000003822 epoxy resin Substances 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
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- 229920002457 flexible plastic Polymers 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
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- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
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- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000009916 joint effect Effects 0.000 description 1
- 239000006101 laboratory sample Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical group 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
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- 238000011160 research Methods 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000001550 time effect Effects 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
L'invention concerne la production de nouveaux films minces de semi-conducteurs améliorés et des procédés de fabrication de films minces semi-conducteurs pouvant se fixer à différents types de substrats. Les films minces peuvent être souples. Selon les procédés de l'invention, on agit simultanément sur le substrat semi-conducteur pendant une période déterminée en utilisant l'anodisation, le rayonnement électromagnétique, le champ magnétique, le champ électrique et les oscillations ultrasonores de manière à former une structure multiporeuse de semi-conducteur constitué d'une ou de plusieurs couches possédant une porosité différente. Le film mince du semi-conducteur est obtenu par croissance sur une structure poreuse. Les électrodes et/ou le substrat de support désiré peuvent être fixé à la couche obtenue par croissance. La couche obtenue par croissance est séparée du substrat semi-conducteur dans les endroits où la structure poreuse est la moins solide. La couche mince séparée de semi-conducteur, fixé au substrat de support, peut ensuite s'utiliser dans le traitement visant à perfectionner des dispositifs à film, de cellules solaires et de diodes rayonnantes. Ces films minces de semi-conducteur ont une structure cristalline parfaite et peuvent être fabriqués à peu de frais, ce qui permet de les utiliser dans la fabrication d'éléments solaires et des diodes rayonnantes à faible prix.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/UA2007/000005 WO2008088298A1 (fr) | 2007-01-17 | 2007-01-17 | Procédé de fabrication de films minces de semi-conducteurs |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/UA2007/000005 WO2008088298A1 (fr) | 2007-01-17 | 2007-01-17 | Procédé de fabrication de films minces de semi-conducteurs |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2008088298A1 true WO2008088298A1 (fr) | 2008-07-24 |
Family
ID=39636216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/UA2007/000005 WO2008088298A1 (fr) | 2007-01-17 | 2007-01-17 | Procédé de fabrication de films minces de semi-conducteurs |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2008088298A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013028598A1 (fr) * | 2011-08-19 | 2013-02-28 | William Marsh Rice University | Matériaux d'anode de batterie et leurs procédés de fabrication |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1079330A (ja) * | 1996-09-04 | 1998-03-24 | Sony Corp | 薄膜半導体の製造方法 |
| RU2123218C1 (ru) * | 1997-03-04 | 1998-12-10 | Институт физики полупроводников СО РАН | Способ получения структуры "полупроводник на пористом кремнии" |
| US6326280B1 (en) * | 1995-02-02 | 2001-12-04 | Sony Corporation | Thin film semiconductor and method for making thin film semiconductor |
| US7148119B1 (en) * | 1994-03-10 | 2006-12-12 | Canon Kabushiki Kaisha | Process for production of semiconductor substrate |
-
2007
- 2007-01-17 WO PCT/UA2007/000005 patent/WO2008088298A1/fr active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7148119B1 (en) * | 1994-03-10 | 2006-12-12 | Canon Kabushiki Kaisha | Process for production of semiconductor substrate |
| US6326280B1 (en) * | 1995-02-02 | 2001-12-04 | Sony Corporation | Thin film semiconductor and method for making thin film semiconductor |
| JPH1079330A (ja) * | 1996-09-04 | 1998-03-24 | Sony Corp | 薄膜半導体の製造方法 |
| RU2123218C1 (ru) * | 1997-03-04 | 1998-12-10 | Институт физики полупроводников СО РАН | Способ получения структуры "полупроводник на пористом кремнии" |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013028598A1 (fr) * | 2011-08-19 | 2013-02-28 | William Marsh Rice University | Matériaux d'anode de batterie et leurs procédés de fabrication |
| CN103890915A (zh) * | 2011-08-19 | 2014-06-25 | 威廉马歇莱思大学 | 阳极电池材料及其制备方法 |
| US9340894B2 (en) | 2011-08-19 | 2016-05-17 | William Marsh Rice University | Anode battery materials and methods of making the same |
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