WO2008084646A1 - 撮像装置の製造方法及び撮像装置並びに携帯端末 - Google Patents

撮像装置の製造方法及び撮像装置並びに携帯端末 Download PDF

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Publication number
WO2008084646A1
WO2008084646A1 PCT/JP2007/074512 JP2007074512W WO2008084646A1 WO 2008084646 A1 WO2008084646 A1 WO 2008084646A1 JP 2007074512 W JP2007074512 W JP 2007074512W WO 2008084646 A1 WO2008084646 A1 WO 2008084646A1
Authority
WO
WIPO (PCT)
Prior art keywords
imaging device
imaging
substrate
imaging elements
portable terminal
Prior art date
Application number
PCT/JP2007/074512
Other languages
English (en)
French (fr)
Inventor
Takeshi Uesaka
Masashi Saito
Original Assignee
Konica Minolta Opto, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Opto, Inc. filed Critical Konica Minolta Opto, Inc.
Priority to JP2008553045A priority Critical patent/JPWO2008084646A1/ja
Publication of WO2008084646A1 publication Critical patent/WO2008084646A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses

Abstract

　低コストの撮像装置が得られる製造方法を得、該製造方法による低コストの撮像装置を提供するために、シリコンウェハの一方の面に複数の前記撮像素子を形成する工程と、前記撮像素子に最も近くに配置された光学部材で、前記撮像素子毎に前記受光画素部を封止する工程と、前記シリコンウェハを前記撮像素子毎に切断する工程と、切断された良品の複数の前記撮像素子を基板上に載置する工程と、前記基板と複数の前記撮像素子を電気的に接続する工程と、前記撮像光学系を組み込む工程と、前記基板を前記撮像素子毎に切断分離する工程と、を有する撮像装置の製造方法とする。
PCT/JP2007/074512 2007-01-11 2007-12-20 撮像装置の製造方法及び撮像装置並びに携帯端末 WO2008084646A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008553045A JPWO2008084646A1 (ja) 2007-01-11 2007-12-20 撮像装置の製造方法及び撮像装置並びに携帯端末

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-003199 2007-01-11
JP2007003199 2007-01-11

Publications (1)

Publication Number Publication Date
WO2008084646A1 true WO2008084646A1 (ja) 2008-07-17

Family

ID=39608544

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/074512 WO2008084646A1 (ja) 2007-01-11 2007-12-20 撮像装置の製造方法及び撮像装置並びに携帯端末

Country Status (2)

Country Link
JP (1) JPWO2008084646A1 (ja)
WO (1) WO2008084646A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011100903A (ja) * 2009-11-06 2011-05-19 Sharp Corp 電子素子モジュールおよびその製造方法、電子素子ウエハモジュールおよびその製造方法、並びに電子情報機器
EP2369391A1 (en) 2010-03-10 2011-09-28 Fujifilm Corporation Wafer lens unit and method for manufacturing the same
WO2011138946A1 (ja) * 2010-05-07 2011-11-10 オリンパス株式会社 撮像モジュール
WO2018029204A1 (en) * 2016-08-08 2018-02-15 Ams Ag Method of producing an optical sensor at wafer-level and optical sensor
KR20200093647A (ko) * 2017-12-19 2020-08-05 닝보 써니 오포테크 코., 엘티디. 감광성 어셈블리, 카메라 모듈, 감광성 어셈블리 접합 패널 및 그의 제작 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003197656A (ja) * 2001-12-27 2003-07-11 Seiko Epson Corp 光デバイス及びその製造方法、光モジュール、回路基板並びに電子機器
JP2004229167A (ja) * 2003-01-27 2004-08-12 Sanyo Electric Co Ltd カメラモジュールの製造方法
JP2004260356A (ja) * 2003-02-24 2004-09-16 Hitachi Maxell Ltd カメラモジュール
JP2005244118A (ja) * 2004-02-27 2005-09-08 Toshiba Corp 半導体素子の製造方法およびカメラモジュールの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003197656A (ja) * 2001-12-27 2003-07-11 Seiko Epson Corp 光デバイス及びその製造方法、光モジュール、回路基板並びに電子機器
JP2004229167A (ja) * 2003-01-27 2004-08-12 Sanyo Electric Co Ltd カメラモジュールの製造方法
JP2004260356A (ja) * 2003-02-24 2004-09-16 Hitachi Maxell Ltd カメラモジュール
JP2005244118A (ja) * 2004-02-27 2005-09-08 Toshiba Corp 半導体素子の製造方法およびカメラモジュールの製造方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011100903A (ja) * 2009-11-06 2011-05-19 Sharp Corp 電子素子モジュールおよびその製造方法、電子素子ウエハモジュールおよびその製造方法、並びに電子情報機器
EP2369391A1 (en) 2010-03-10 2011-09-28 Fujifilm Corporation Wafer lens unit and method for manufacturing the same
US8432612B2 (en) 2010-03-10 2013-04-30 Fujifilm Corporation Wafer lens unit and method for manufacturing the same
WO2011138946A1 (ja) * 2010-05-07 2011-11-10 オリンパス株式会社 撮像モジュール
US8917315B2 (en) 2010-05-07 2014-12-23 Olympus Corporation Imaging module
CN109496362A (zh) * 2016-08-08 2019-03-19 ams有限公司 在晶片级生产光学传感器的方法以及光学传感器
WO2018029204A1 (en) * 2016-08-08 2018-02-15 Ams Ag Method of producing an optical sensor at wafer-level and optical sensor
US10943936B2 (en) 2016-08-08 2021-03-09 Ams Ag Method of producing an optical sensor at wafer-level and optical sensor
CN109496362B (zh) * 2016-08-08 2023-07-21 ams有限公司 在晶片级生产光学传感器的方法以及光学传感器
KR20200093647A (ko) * 2017-12-19 2020-08-05 닝보 써니 오포테크 코., 엘티디. 감광성 어셈블리, 카메라 모듈, 감광성 어셈블리 접합 패널 및 그의 제작 방법
JP2021507621A (ja) * 2017-12-19 2021-02-22 ▲寧▼波舜宇光▲電▼信息有限公司 感光アセンブリ、撮像モジュール、感光アセンブリジョイントパネルおよびその対応する製造方法
JP7085625B2 (ja) 2017-12-19 2022-06-16 ▲寧▼波舜宇光▲電▼信息有限公司 感光アセンブリ、撮像モジュール、感光アセンブリジョイントパネルおよびその対応する製造方法
KR102428682B1 (ko) * 2017-12-19 2022-08-02 닝보 써니 오포테크 코., 엘티디. 감광성 어셈블리, 카메라 모듈, 감광성 어셈블리 접합 패널 및 그의 제작 방법
US11646332B2 (en) 2017-12-19 2023-05-09 Ningbo Sunny Opotech Co., Ltd. Photosensitive assembly, photographing module, and photosensitive assembly jointed board and corresponding manufacturing method thereof

Also Published As

Publication number Publication date
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