WO2008081832A1 - コアシェル型ハイパーブランチポリマー、レジスト組成物、半導体装置の製造方法、半導体装置 - Google Patents

コアシェル型ハイパーブランチポリマー、レジスト組成物、半導体装置の製造方法、半導体装置 Download PDF

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Publication number
WO2008081832A1
WO2008081832A1 PCT/JP2007/075008 JP2007075008W WO2008081832A1 WO 2008081832 A1 WO2008081832 A1 WO 2008081832A1 JP 2007075008 W JP2007075008 W JP 2007075008W WO 2008081832 A1 WO2008081832 A1 WO 2008081832A1
Authority
WO
WIPO (PCT)
Prior art keywords
shell
semiconductor device
core
hyperbranched polymer
type hyperbranched
Prior art date
Application number
PCT/JP2007/075008
Other languages
English (en)
French (fr)
Inventor
Kaoru Suzuki
Akinori Uno
Minoru Tamura
Yoshiyasu Kubo
Mineko Horibe
Shinichiro Kabashima
Masahiro Sato
Original Assignee
Lion Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lion Corporation filed Critical Lion Corporation
Publication of WO2008081832A1 publication Critical patent/WO2008081832A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F291/00—Macromolecular compounds obtained by polymerising monomers on to macromolecular compounds according to more than one of the groups C08F251/00 - C08F289/00
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F297/00—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L51/00—Compositions of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • C08L51/003—Compositions of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers grafted on to macromolecular compounds obtained by reactions only involving unsaturated carbon-to-carbon bonds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L53/00—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Abstract

　光リソグラフィーを中心としたナノファブリケーション、特に電子線、ＥＵＶリソグラフィーに好適な、密着性、感度、及び表面平滑性を向上させたコアシェル型ハイパーブランチポリマーをベースポリマーとして含み、超ＬＳＩ等の半導体装置製造用の微細パターンを形成することが可能なレジスト組成物を得ることを目的として、コアシェル型ハイパーブランチポリマーにおけるシェル部に、下記式（ａ）又は（ｂ）で表される極性基を有するモノマーから誘導される繰り返し単位の少なくとも１種を含有するようにした。
PCT/JP2007/075008 2006-12-26 2007-12-26 コアシェル型ハイパーブランチポリマー、レジスト組成物、半導体装置の製造方法、半導体装置 WO2008081832A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006350528A JP2008163056A (ja) 2006-12-26 2006-12-26 ハイパーブランチポリマーの合成方法、ハイパーブランチポリマー、レジスト組成物、半導体集積回路、および半導体集積回路の製造方法
JP2006-350528 2006-12-26

Publications (1)

Publication Number Publication Date
WO2008081832A1 true WO2008081832A1 (ja) 2008-07-10

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Application Number Title Priority Date Filing Date
PCT/JP2007/075008 WO2008081832A1 (ja) 2006-12-26 2007-12-26 コアシェル型ハイパーブランチポリマー、レジスト組成物、半導体装置の製造方法、半導体装置

Country Status (2)

Country Link
JP (1) JP2008163056A (ja)
WO (1) WO2008081832A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5578776B2 (ja) * 2008-03-03 2014-08-27 キヤノン株式会社 デンドリマー粒子、ｍｒｉ用造影剤及びデンドリマー粒子の製造方法
JP2011017902A (ja) * 2009-07-09 2011-01-27 Panasonic Corp 化学増幅型レジスト材料及びそれを用いたパターン形成方法
JP5740322B2 (ja) * 2012-02-06 2015-06-24 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、それを用いた感活性光線性又は感放射線性膜及びパターン形成方法、半導体デバイスの製造方法及び半導体デバイス、並びに、化合物
EP3068836A4 (en) * 2013-11-13 2017-08-02 Orthogonal Inc. Branched fluorinated photopolymers
JP6648726B2 (ja) * 2017-03-22 2020-02-14 信越化学工業株式会社 レジスト材料及びパターン形成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001324813A (ja) * 2000-03-07 2001-11-22 Shin Etsu Chem Co Ltd 化学増幅ポジ型レジスト材料
WO2007020734A1 (ja) * 2005-08-12 2007-02-22 Lion Corporation ナノ平滑性とエッチング耐性を有するフォトレジストポリマーならびにレジスト組成物
JP2007154181A (ja) * 2005-11-11 2007-06-21 Lion Corp ハイパーブランチポリマーの製造方法
JP2007241121A (ja) * 2006-03-10 2007-09-20 Lion Corp 極端紫外線用レジスト組成物

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001324813A (ja) * 2000-03-07 2001-11-22 Shin Etsu Chem Co Ltd 化学増幅ポジ型レジスト材料
WO2007020734A1 (ja) * 2005-08-12 2007-02-22 Lion Corporation ナノ平滑性とエッチング耐性を有するフォトレジストポリマーならびにレジスト組成物
JP2007154181A (ja) * 2005-11-11 2007-06-21 Lion Corp ハイパーブランチポリマーの製造方法
JP2007241121A (ja) * 2006-03-10 2007-09-20 Lion Corp 極端紫外線用レジスト組成物

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JP2008163056A (ja) 2008-07-17

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