WO2004044654A3 - Compositions and processes for nanoimprinting - Google Patents

Compositions and processes for nanoimprinting Download PDF

Info

Publication number
WO2004044654A3
WO2004044654A3 PCT/US2003/035796 US0335796W WO2004044654A3 WO 2004044654 A3 WO2004044654 A3 WO 2004044654A3 US 0335796 W US0335796 W US 0335796W WO 2004044654 A3 WO2004044654 A3 WO 2004044654A3
Authority
WO
WIPO (PCT)
Prior art keywords
compositions
processes
nanoimprinting
present
sub
Prior art date
Application number
PCT/US2003/035796
Other languages
French (fr)
Other versions
WO2004044654A2 (en
Inventor
Stephen Chou
Lei Chen
Original Assignee
Univ Princeton
Stephen Chou
Lei Chen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Princeton, Stephen Chou, Lei Chen filed Critical Univ Princeton
Priority to AU2003291443A priority Critical patent/AU2003291443A1/en
Priority to CN200380106100.2A priority patent/CN1726433B/en
Publication of WO2004044654A2 publication Critical patent/WO2004044654A2/en
Publication of WO2004044654A3 publication Critical patent/WO2004044654A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0017—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor for the production of embossing, cutting or similar devices; for the production of casting means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)

Abstract

The present invention is directed to new nanoimprint resist and thin-film compositions for use in nanoimprinting lithography. The compositions of the present invention permit economical high-throughput mass production, using nanoimprint processes, of patterns having sub-200 nm, and even sub-50 nm features.
PCT/US2003/035796 2002-11-12 2003-11-12 Compositions and processes for nanoimprinting WO2004044654A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2003291443A AU2003291443A1 (en) 2002-11-12 2003-11-12 Compositions and processes for nanoimprinting
CN200380106100.2A CN1726433B (en) 2002-11-12 2003-11-12 Compositions and processes for nanoimprinting

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US42558702P 2002-11-12 2002-11-12
US60/425,587 2002-11-12

Publications (2)

Publication Number Publication Date
WO2004044654A2 WO2004044654A2 (en) 2004-05-27
WO2004044654A3 true WO2004044654A3 (en) 2005-06-23

Family

ID=32313021

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/035796 WO2004044654A2 (en) 2002-11-12 2003-11-12 Compositions and processes for nanoimprinting

Country Status (3)

Country Link
CN (1) CN1726433B (en)
AU (1) AU2003291443A1 (en)
WO (1) WO2004044654A2 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7641468B2 (en) 2004-09-01 2010-01-05 Hewlett-Packard Development Company, L.P. Imprint lithography apparatus and method employing an effective pressure
DE102004044111B4 (en) * 2004-09-08 2015-05-07 Seereal Technologies Gmbh Method and device for coding and reconstructing computer-generated video holograms
US8636937B2 (en) 2005-10-20 2014-01-28 Agency For Science, Technology And Research Hierarchical nanopatterns by nanoimprint lithography
CN1323025C (en) * 2005-11-22 2007-06-27 华中科技大学 Super hydrophobic surface possessing dual microtexture and preparation method
KR100848559B1 (en) * 2006-06-29 2008-07-25 엘지디스플레이 주식회사 FABRICATING METHOD OF SOFT MOLD AND pattern forming METHOD USING THEREOF
JP5002207B2 (en) 2006-07-26 2012-08-15 キヤノン株式会社 Method for manufacturing structure having pattern
TW200839432A (en) * 2006-12-05 2008-10-01 Nano Terra Inc Method for patterning a surface
JP4445538B2 (en) * 2007-09-26 2010-04-07 株式会社東芝 Pattern formation method
US9337100B2 (en) 2009-06-03 2016-05-10 Qualcomm Incorporated Apparatus and method to fabricate an electronic device
CN101923282B (en) * 2009-06-09 2012-01-25 清华大学 Nano-imprint resist and nano-imprint method adopting same
CN101923283B (en) * 2009-06-09 2012-01-25 清华大学 Nano-imprint resist and nano-imprint method adopting same
CN101923279B (en) * 2009-06-09 2012-03-28 清华大学 Nano-imprint template and preparation method thereof
CN102959679B (en) * 2010-07-02 2016-01-20 株式会社德山 The formation method of the pattern of photo-curable impression composition and use said composition
US9731456B2 (en) 2013-03-14 2017-08-15 Sabic Global Technologies B.V. Method of manufacturing a functionally graded article
JP6029506B2 (en) * 2013-03-26 2016-11-24 富士フイルム株式会社 Composition for forming underlayer film for imprint and pattern forming method
JP6338657B2 (en) * 2013-06-19 2018-06-06 エーファウ・グループ・エー・タルナー・ゲーエムベーハー Imprint materials for imprint lithography
CN104681641A (en) * 2013-11-29 2015-06-03 比亚迪股份有限公司 Etching resisting agent and preparation method thereof as well as SE (selective emitter) crystalline silicon solar cell and preparation method thereof
CN110983404A (en) * 2019-12-30 2020-04-10 江苏乐彩印刷材料有限公司 Environment-friendly energy-saving CTP (computer to plate) lithographic printing material

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62214531A (en) * 1986-03-17 1987-09-21 Toray Ind Inc Optical recording medium
US5202366A (en) * 1988-07-20 1993-04-13 Union Carbide Chemicals & Plastics Technology Corporation Crosslinkable polyester compositions with improved properties
US20010040145A1 (en) * 1999-03-11 2001-11-15 Willson Carlton Grant Step and flash imprint lithography
WO2002003142A2 (en) * 2000-06-30 2002-01-10 President And Fellows Of Harvard College Electric microcontact printing method and apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62214531A (en) * 1986-03-17 1987-09-21 Toray Ind Inc Optical recording medium
US5202366A (en) * 1988-07-20 1993-04-13 Union Carbide Chemicals & Plastics Technology Corporation Crosslinkable polyester compositions with improved properties
US20010040145A1 (en) * 1999-03-11 2001-11-15 Willson Carlton Grant Step and flash imprint lithography
WO2002003142A2 (en) * 2000-06-30 2002-01-10 President And Fellows Of Harvard College Electric microcontact printing method and apparatus

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
DAHL-YOUNG KHANG ET AL: "Room-temperature imprint lithography by solvent vapor treatment", APPLIED PHYSICS LETTERS AIP USA, vol. 76, no. 7, 2000, pages 870 - 872, XP002297933, ISSN: 0003-6951 *
HAISMA J ET AL: "MOLD-ASSISTED NANOLITHOGRAPHY: A PROCESS FOR RELIABLE PATTERN REPLICATION", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 14, no. 6, November 1996 (1996-11-01), pages 4124 - 4128, XP000721137, ISSN: 1071-1023 *
LEBIB A ET AL: "Room-temperature and low-pressure nanoimprint lithography", MICROELECTRONIC ENGINEERING ELSEVIER NETHERLANDS, vol. 61-62, July 2002 (2002-07-01), pages 371 - 377, XP002297934, ISSN: 0167-9317 *
PATENT ABSTRACTS OF JAPAN vol. 012, no. 076 (P - 675) 10 March 1988 (1988-03-10) *
PREIFFER K ET AL C ET AL: "Suitability of new polymer materials with adjustable glass temperature for nano-imprinting", MICROELECTRONIC ENGINEERING ELSEVIER NETHERLANDS, vol. 46, no. 1-4, 1999, pages 431 - 434, XP002297935, ISSN: 0167-9317 *
SCHULZ H ET AL: "Low-temperature wafer-scale 'warm' embossing for mix and match with UV-lithography", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING SPIE-INT. SOC. OPT. ENG USA, vol. 4688, February 2002 (2002-02-01), pages 223 - 231, XP002297930, ISSN: 0277-786X *
ZWIERS R J M ET AL: "Aspherical lenses produced by a fast high-precision replication process using UV-curable coatings", APPLIED OPTICS USA, vol. 24, no. 24, 15 December 1985 (1985-12-15), pages 4483 - 4488, XP002316812, ISSN: 0003-6935 *

Also Published As

Publication number Publication date
AU2003291443A1 (en) 2004-06-03
CN1726433A (en) 2006-01-25
WO2004044654A2 (en) 2004-05-27
CN1726433B (en) 2010-12-15
AU2003291443A8 (en) 2004-06-03

Similar Documents

Publication Publication Date Title
WO2004044654A3 (en) Compositions and processes for nanoimprinting
TW200720839A (en) Hierarchical nanopatterns by nanoimprint lithography
AU2003261317A1 (en) Scatterometry alignment for imprint lithography
TW200744829A (en) Tesselated patterns in imprint lithography
TW200639585A (en) Resist composition and patterning process
EP1598701A4 (en) Photoresist composition and method of forming resist pattern
TW200710986A (en) A patterning process
EP1791024A4 (en) Electron-beam or euv (extreme ultraviolet) resist composition and process for the formation of resist patterns
TW200702928A (en) Composition for underlayer film of resist and process for producing the same
WO2007133346A3 (en) Imprint lithography method and system
WO2007047646A3 (en) Substituted dihydro-isoindolones useful in treating kinase disorders
EP1717261A4 (en) Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern
SE0001931D0 (en) Method of producing a template, as well as the template made from it
WO2007081381A3 (en) Spinodally patterned nanostructures
TW200510915A (en) Process for forming features of 50 nm or less half-pitch with chemically amplified resist imaging
TW200612201A (en) Positive photosensitive resin and novel dithiol compound
WO2006011811A3 (en) Radicals and their use as paramagnetic agents in a dynamic nuclear polarisation process
TW200615337A (en) Azobalbituric acid metal complex pigment and process for the production thereof
AU2002221693A1 (en) Epothilone synthesis components iii and iv: asymmetrically substituted acyloins and acyloin derivatives, method for the production thereof and method for the production of epithilone b, d and epothilone derivatives
SG123705A1 (en) Mask and method to pattern chromeless phase lithography contact hole
EP1736485A4 (en) Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern
AU2003289430A1 (en) Positive resist composition and method for forming resist pattern
CY1109740T1 (en) NEW METHOD OF PRODUCING COMPOSITION OF 1,3,4,5-tetrahydro-2H- 3-benzazepine-2-one AND APPLICATION TO THE COMPOSITION OF IBAVRADIN AND SALT SALK
CO5150236A1 (en) METHOD FOR TREATMENT ASTHMA INDUCED BY THE YEAR INDUCED BY THE YEAR
TW200734821A (en) Resist composition and patterning process

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 20038A61002

Country of ref document: CN

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP