WO2008079077A3 - Structure nanoélectronique et procédé de production associé - Google Patents

Structure nanoélectronique et procédé de production associé Download PDF

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Publication number
WO2008079077A3
WO2008079077A3 PCT/SE2007/001171 SE2007001171W WO2008079077A3 WO 2008079077 A3 WO2008079077 A3 WO 2008079077A3 SE 2007001171 W SE2007001171 W SE 2007001171W WO 2008079077 A3 WO2008079077 A3 WO 2008079077A3
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WO
WIPO (PCT)
Prior art keywords
volume element
nanoelement
semiconductor device
producing
semiconductor
Prior art date
Application number
PCT/SE2007/001171
Other languages
English (en)
Other versions
WO2008079077A2 (fr
Inventor
Patrik Svensson
Jonas Ohlsson
Lars Samuelson
Truls Loewgren
Yourii Martynov
Original Assignee
Qunano Ab
Patrik Svensson
Jonas Ohlsson
Lars Samuelson
Truls Loewgren
Yourii Martynov
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/812,226 external-priority patent/US8049203B2/en
Application filed by Qunano Ab, Patrik Svensson, Jonas Ohlsson, Lars Samuelson, Truls Loewgren, Yourii Martynov filed Critical Qunano Ab
Priority to EP07861100A priority Critical patent/EP2095426A4/fr
Publication of WO2008079077A2 publication Critical patent/WO2008079077A2/fr
Publication of WO2008079077A3 publication Critical patent/WO2008079077A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02603—Nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02606—Nanotubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02653—Vapour-liquid-solid growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Composite Materials (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Led Devices (AREA)

Abstract

La présente invention concerne un dispositif à semi-conducteurs comprenant un élément nanométrique à semi-conducteurs (100) et un élément de volume (105) agencés en connexion épitaxiale l'un à l'autre. Le dispositif à semi-conducteurs est électriquement raccordable à l'élément de volume (105) et l'élément nanométrique (100) est connecté électriquement en série. L'élément de volume (105) est au moins partiellement dopé afin de produire une concentration de porteurs de charge élevée dans l'élément nanométrique (100) et une faible résistance d'accès dans la connexion électrique avec l'élément de volume (105). De préférence l'élément nanométrique (100) s'avance à partir d'un substrat à semi-conducteurs (110). Une couche concentrique (106) peut être agencée sur l'élément de volume (105) pour former un contact électrique. Des structures de DEL comprenant des structures d'élément de volume/éléments nanométriques (100, 105) sont décrites. Un procédé pour produire un dispositif à semi-conducteurs selon l'invention est également présenté.
PCT/SE2007/001171 2006-12-22 2007-12-22 Structure nanoélectronique et procédé de production associé WO2008079077A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP07861100A EP2095426A4 (fr) 2006-12-22 2007-12-22 Structure nanoélectronique et procédé de production associé

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
SE0602840-1 2006-12-22
SE0602840 2006-12-22
SE0700102-7 2007-01-12
SE0700102 2007-01-12
US11/812,226 2007-06-15
US11/812,226 US8049203B2 (en) 2006-12-22 2007-06-15 Nanoelectronic structure and method of producing such
SE0702404-5 2007-10-26
SE0702404 2007-10-26

Publications (2)

Publication Number Publication Date
WO2008079077A2 WO2008079077A2 (fr) 2008-07-03
WO2008079077A3 true WO2008079077A3 (fr) 2008-08-21

Family

ID=40902775

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/SE2007/001171 WO2008079077A2 (fr) 2006-12-22 2007-12-22 Structure nanoélectronique et procédé de production associé

Country Status (2)

Country Link
EP (1) EP2095426A4 (fr)
WO (1) WO2008079077A2 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE533090C2 (sv) * 2008-07-09 2010-06-22 Qunano Ab Nanostrukturerad ljusdiod
KR20110073493A (ko) * 2008-09-04 2011-06-29 큐나노 에이비 나노구조 포토다이오드
KR20120003463A (ko) * 2009-03-25 2012-01-10 글로 에이비 쇼트키 장치
EP2472585B1 (fr) * 2009-09-30 2022-07-06 National University Corporation Hokkaido University Transistor à effet de champ et effet tunnel et procédé de fabrication associé
KR20120138805A (ko) 2010-03-12 2012-12-26 샤프 가부시키가이샤 발광 장치의 제조 방법, 발광 장치, 조명 장치, 백라이트, 액정 패널, 표시 장치, 표시 장치의 제조 방법, 표시 장치의 구동 방법 및 액정 표시 장치
JP2011211047A (ja) * 2010-03-30 2011-10-20 Sharp Corp 表示装置、表示装置の製造方法および表示装置の駆動方法
CN102959740B (zh) 2010-09-14 2018-08-03 原子能与替代能源委员会 用于光发射的基于纳米线的光电器件
GB2500831B (en) * 2010-11-17 2014-07-02 Ibm Nanowire devices
JP6196987B2 (ja) 2012-02-14 2017-09-13 ヘキサジェム アーベー 窒化ガリウムナノワイヤに基づくエレクトロニクス
FR2991100B1 (fr) * 2012-05-25 2014-06-27 Commissariat Energie Atomique Transistor a base de nanofil, procede de fabrication du transistor, composant semi-conducteur integrant le transistor, programme informatique et support d'enregistrement associes au procede de fabrication
KR20150036229A (ko) 2012-07-06 2015-04-07 큐나노 에이비 방사상 나노와이어 에사키 다이오드 장치 및 방법
WO2014066379A1 (fr) 2012-10-26 2014-05-01 Glo Ab Structure optoélectronique dimensionnée pour nanofil, et procédé de modification de parties sélectionnées de ladite structure
FR3011383B1 (fr) * 2013-09-30 2017-05-26 Commissariat Energie Atomique Procede de fabrication de dispositifs optoelectroniques a diodes electroluminescentes
WO2015147866A1 (fr) 2014-03-28 2015-10-01 Intel Corporation Contact supérieur mis à nouveau à croître de façon sélective pour des dispositifs verticaux à semi-conducteurs
KR102167517B1 (ko) * 2014-03-28 2020-10-19 인텔 코포레이션 수직 반도체 디바이스들을 제조하기 위한 종횡비 트래핑(art)
FR3098011B1 (fr) * 2019-06-28 2022-07-15 Aledia Procede de fabrication de microfils ou nanofils

Citations (5)

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EP0544408A2 (fr) * 1991-10-28 1993-06-02 Xerox Corporation Dispositifs à semi-conducteurs émetteurs de lumière à confinement quantique
US20040175844A1 (en) * 2002-12-09 2004-09-09 The Regents Of The University Of California Sacrificial template method of fabricating a nanotube
US20050006673A1 (en) * 2003-04-04 2005-01-13 Btg International Limited Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them
US20050161662A1 (en) * 2001-03-30 2005-07-28 Arun Majumdar Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
WO2006135336A1 (fr) * 2005-06-16 2006-12-21 Qunano Ab Transistor a nanofil semi-conducteur

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US20040003839A1 (en) * 2002-07-05 2004-01-08 Curtin Lawrence F. Nano photovoltaic/solar cells
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JP4740795B2 (ja) * 2005-05-24 2011-08-03 エルジー エレクトロニクス インコーポレイティド ロッド型発光素子及びその製造方法

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EP0544408A2 (fr) * 1991-10-28 1993-06-02 Xerox Corporation Dispositifs à semi-conducteurs émetteurs de lumière à confinement quantique
US20050161662A1 (en) * 2001-03-30 2005-07-28 Arun Majumdar Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US20040175844A1 (en) * 2002-12-09 2004-09-09 The Regents Of The University Of California Sacrificial template method of fabricating a nanotube
US20050006673A1 (en) * 2003-04-04 2005-01-13 Btg International Limited Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them
WO2006135336A1 (fr) * 2005-06-16 2006-12-21 Qunano Ab Transistor a nanofil semi-conducteur

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BINDAL A. ET AL.: "The impact of silicon nano-wire technology on the design of single-work-function CMOS transistor and circuits", NANOTECHNOLOGY, vol. 17, 2006, pages 4340 - 4351, XP020104037 *
BRYLLERT T. ET AL.: "Vertical wrap-gated nanowire transistors", NANOTECHNOLOGY, vol. 17, 2006, pages S227 - S230, XP020103764 *
See also references of EP2095426A4 *

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EP2095426A4 (fr) 2012-10-10
EP2095426A2 (fr) 2009-09-02
WO2008079077A2 (fr) 2008-07-03

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