WO2008076199A2 - Dispositifs de conditionnement de tampons de cmp et procédés associés - Google Patents

Dispositifs de conditionnement de tampons de cmp et procédés associés Download PDF

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Publication number
WO2008076199A2
WO2008076199A2 PCT/US2007/024169 US2007024169W WO2008076199A2 WO 2008076199 A2 WO2008076199 A2 WO 2008076199A2 US 2007024169 W US2007024169 W US 2007024169W WO 2008076199 A2 WO2008076199 A2 WO 2008076199A2
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WIPO (PCT)
Prior art keywords
cutting
cmp pad
pad
cmp
cutting elements
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PCT/US2007/024169
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English (en)
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WO2008076199A3 (fr
Inventor
Chien-Min Sung
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Chien-Min Sung
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Publication of WO2008076199A2 publication Critical patent/WO2008076199A2/fr
Publication of WO2008076199A3 publication Critical patent/WO2008076199A3/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools

Definitions

  • the present invention relates generally to CMP pad conditioners used to remove material from (e.g., smooth, polish, dress, etc.) CMP pads. Accordingly, the present invention involves the fields of chemistry, physics, and materials science.
  • CMP Chemical Mechanical Polishing
  • the present invention provides a method of reducing a degree of compression of a CMP pad during conditioning of the CMP pad, comprising: engaging the CMP pad with at least one superhard cutting element, the cutting element including a cutting face, the cutting face being angled at 90 degrees or less relative to a finished surface of the CMP pad; and moving the CMP pad and the cutting element relative to one another in a direction resulting in removal of material from the CMP pad with the cutting face to thereby condition the CMP pad.
  • the present invention provides a pad conditioner for removing material from a CMP pad while minimizing compression of the CMP pad, including a base and a plurality of cutting elements, extending from the base.
  • the cutting elements can each having a cutting face angled at 90 degrees or less relative to a finished surface of the CMP pad.
  • the faces of the cutting elements can be oriented such that relative movement of the pad conditioner and the CMP pad results in removal of material from the CMP pad with the cutting faces to thereby condition the CMP pad.
  • a method of reducing a degree of compression of a CMP pad during conditioning of the CMP pad including: engaging the CMP pad with a plurality of superhard cutting elements formed from a polycrystalline diamond compact, each of the cutting elements including a cutting face, the cutting faces being angled at 90 degrees or less relative to a finished surface of the CMP pad; and moving the CMP pad and the cutting element relative to one another in a direction resulting in removal of material from the CMP pad with the cutting face to thereby condition the CMP pad.
  • FIG. 1 is a perspective view of a pad conditioner in accordance with an embodiment of the invention
  • FIG. 2 is a top view of a pad conditioner in accordance with an embodiment of the invention.
  • FIG. 3 A is a partial view of a pad being conditioned in accordance with a PRIOR ART method
  • FIG. 3B is a partial view of a pad being conditioned in accordance with an embodiment of the invention
  • FIG. 3 C is a partial view of a pad being conditioned in accordance with another embodiment of the invention
  • FIG. 3D is a partial view of a pad being conditioned in accordance with another embodiment of the invention.
  • FIG. 4 is a perspective view of a portion of a pad conditioner having cutting elements of varying geometry associated therewith;
  • FIG. 5 is a side, sectional view of a pad conditioner in accordance with an embodiment of the invention
  • FIG. 6A is a photographic, top view of a pad conditioner in accordance with an embodiment of the invention
  • FIG. 6B is a sectional view of the pad conditioner of FIG. 6A;
  • FIG. 7 is a photograph of a portion of a pad conditioner in accordance with an embodiment of the invention.
  • mesh sizes that may be referred to herein are U.S. mesh sizes unless otherwise indicated. Further, mesh sizes are generally understood to indicate an average mesh size of a given collection of particles since each particle within a particular "mesh size" may actually vary over a small distribution of sizes.
  • the term "substantially” refers to the complete or nearly complete extent or degree of an action, characteristic, property, state, structure, item, or result.
  • the two or more objects are referred to as being spaced a "substantially" constant distance from one another, it is understood that the two or more objects are spaced a completely unchanging distance from one another, or so nearly an unchanging distance from one another that a typical person would be unable to appreciate the difference.
  • the exact allowable degree of deviation from absolute completeness may in some cases depend upon the specific context. However, generally speaking the nearness of completion will be so as to have the same overall result as if absolute and total completion were obtained.
  • base or “substrate” means a portion of a pad conditioner that supports abrasive materials, and to which abrasive materials may be affixed, or may extend from.
  • Substrates useful in the present invention may be any shape, thickness, or material, that is capable of supporting abrasive materials in a manner that is sufficient provide a pad conditioner useful for its intended purpose.
  • Substrates may be of a solid material, a powdered material that becomes solid when processed, or a flexible material. Examples of typical substrate materials include without limitation, metals, metal alloys, ceramics, relatively hard polymers or other organic materials, glasses, and mixtures thereof.
  • the substrate may include material that aids in attaching abrasive materials to the substrate, including, without limitation, brazing alloy material, sintering aids and the like.
  • the substrate and the abrasive cutting elements can, in some embodiments, be formed from the same material and can be formed from an integral, single piece of material.
  • "abrasive profile" is to be understood to refer to a shape or a space defined by abrasive materials that can be used to remove material from a CMP pad. Examples of abrasive profiles include, without limitation, rectangular shapes, tapering rectangular shapes, truncated wedge shapes, wedge shapes, and the like.
  • the abrasive profile exhibited by abrasive segments of the present invention will apparent when viewed through a plane in which the CMP pad will be oriented during removal of material from the CMP pad.
  • "superhard” may be used to refer to any crystalline, or polycrystalline material, or mixture of such materials which has a Mohr's hardness of about 8 or greater. In some aspects, the Mohr's hardness may be about 9.5 or greater.
  • Such materials include but are not limited to diamond, polycrystalline diamond (PCD), cubic boron nitride (cBN), polycrystalline cubic boron nitride (PcBN), corundum and sapphire, as well as other superhard materials known to those skilled in the art.
  • Superhard materials may be incorporated into the present invention in a variety of forms including particles, grits, films, layers, pieces, segments, etc. In some cases, the superhard materials of the present invention are in the form of polycrystalline superhard materials, such as PCD and PcBN materials.
  • organic material refers to a semisolid or solid complex amorphous mix of organic compounds.
  • organic material layer and “organic material matrix” may be used interchangeably, refer to a layer or mass of a semisolid or solid complex amorphous mix of organic compounds.
  • the organic material will be a polymer or copolymer formed from the polymerization of one or more monomers.
  • abrasive can describe a variety of structures capable of removing (e.g., cutting, polishing, scraping) material from a CMP pad.
  • An abrasive can include a mass having several cutting points, ridges or mesas formed thereon or therein. It is notable that such cutting points, ridges or mesas may be from a multiplicity of protrusions or asperities included in the mass.
  • an abrasive can include a plurality of individual abrasive particles that may have only one cutting point, ridge or mesa formed thereon or therein.
  • An abrasive can also include composite masses, such as PCD pieces, segment or blanks, either individually comprising the abrasive layer or collectively comprising the abrasive layer.
  • a numerical range of "about 1 micrometer to about 5 micrometers” should be interpreted to include not only the explicitly recited values of about 1 micrometer to about 5 micrometers, but also include individual values and subranges within the indicated range. Thus, included in this numerical range are individual values such as 2, 3, and 4 and sub-ranges such as from 1-3, from 2-4, and from 3-5, etc. This same principle applies to ranges reciting only one numerical value. Furthermore, such an interpretation should apply regardless of the breadth of the range or the characteristics being described.
  • the present invention provides systems and methods for use in conditioning CMP pads in manners that greatly improve the quality of the CMP pad conditioning process, as well as decrease the costs and waste rates associated therewith.
  • the systems and methods of the present invention provide superior cutting interfaces between the pad conditioners and the CMP pads to thereby reduce the amount of pressure or force required to maintain cutting (e.g., conditioning) of the CMP pad.
  • cutting e.g., conditioning
  • This downward force results in compression of the pad material.
  • the pad material is generally a relatively pliable material (such as polyurethane)
  • the downward force often results in the pad material becoming much more stiff and resistant to cutting than when in a non-compressed state.
  • the compressed pad material is correspondingly more difficult to cut smoothly and evenly, with often large pieces being torn resulting in asperities being formed in the CMP pad. These asperities can damage the silicone wafer to be conditioned by the pad.
  • Conventional diamond pad conditioners usually include "dull" diamond tips that cut the soft CMP pad with a negative angle (conventionally used to refer to an angle greater than 90 degrees relative to a finished surface applied to the pad, as the tips move away from the finished surface).
  • the relatively soft pad must be compressed, resulting in significant deformation (elastic and plastic) before it is penetrated by the diamond tips. Due to the resulting dragging and tearing, the cutting path remaining on the pad is jagged with varying width and depth.
  • the present invention can apply multiple cutting tips that can penetrate the soft pad with minimal disruption.
  • This aspect of the invention becomes even more critical as CMP pads become softer and gentler in order to avoid damaging (e.g. dishing, erosion, scratching) the delicate IC during polishing.
  • Some new pads e.g. Room Haas' Eco Vision
  • FIG. 3 This concept is illustrated in FIG. 3, where a conventional cutting element 16b is shown engaging a CMP pad 14.
  • the cutting element 16b includes cutting faces 18b that form an angle D 3 relative to a finished surface to be applied to the pad that is greater than 90 degrees (relative to the finished surface to be applied to the pad, as the cutting element moves away from the finished surface - sometimes referred to as a negative cutting angle).
  • the pad material experiences plastic deformation, resulting in a more stiff response to force applied to the pad material. As such, cutting the pad material is more difficult, and the resulting cut produces a rough and uneven surface on the pad.
  • a pad conditioner 12 is provided for removing material from a CMP pad (14 in FIGs. 3B through 3D) while minimizing compression of the CMP pad.
  • the conditioner can include a base 14 and a plurality of superhard cutting elements 16 extending from the base. As best appreciated from FIG.
  • the cutting elements can each have a cutting face 18 angled at 90 degrees or less relative to a finished surface to be applied to the CMP pad (e.g., relative to movement of the cutting face away from the finished surface - sometimes referred to as a positive cutting angle).
  • the face 18 of the cutting element 16 can be oriented such that relative movement of the pad conditioner (in the direction indicated at 22 in FIG. 3B) and the CMP pad results in clean removal of material from the CMP pad with the cutting face to thereby condition the CMP pad.
  • the dressing process can cleanly shave a layer of pad material from the pad.
  • the resultant surface applied to the pad can be safely used in the CMP process without damaging expensive silicon wafers.
  • the present pad conditioners can be used to shave even a very shallow, thin layer of material from the pad and leave behind a clean, smooth and even finished surface on the pad. This technique can be used to remove thin layers of glaze that can be formed on the surface of the CMP pad.
  • Cutting faces 18 are shown in the figures oriented at angle D i of about 90 degrees relative to the finished surface to be applied to the CMP pad.
  • Cutting face 18a of FIG. 3D is oriented at angle D 2 that is less than 90 degrees relative to the finished surface to be applied to the CMP pad, on the order of about 60 degrees.
  • the cutting faces can be oriented at a variety of angles, and in one embodiment vary from about 45 degrees to about 90 degrees relative to the finished surface of the CMP pad. It has been found that reducing the angle creates an even sharper cutting interface between the cutting element and the pad.
  • the cutting elements can include a distal portion (e.g., a portion furthest from a base of the pad conditioner) and a proximal portion (e.g., a portion closest to the base).
  • a cross section of the distal portion can be wider than a cross section of the proximal portion.
  • the cutting element can flare outward (in one or more directions) at a lowermost portion (e.g., a portion to be engaged with the pad). In this manner, the angle of the cutting face can be decreased below 90 degrees.
  • the angles of the cutting faces can vary from one embodiment to another.
  • the cutting angle is on the order of about 90 degrees.
  • the cutting angle can be slightly larger than 90 degrees, on the order of 95 degrees, 100 degrees, and ranges inclusive of each of these values (e.g., 90-92 degrees, 93-97 degrees, etc.), and increments falling between these values.
  • the cutting angle can be on the order of less than about 90 degrees, less than about 80 degrees, less than about 75 degrees, less than about 70 degrees, less than about 65 degrees, less than about 60 degrees, and ranges inclusive of each of these values (e.g., 60 degrees to 90 degrees), and increments falling between these values. While the cutting element 16a shown in FIG.
  • 3D includes a cutting face 18a that continually tapers outward, it is to be understood that the cutting element can extend downwardly (relative to the orientation shown in the figures) for some distance until flaring outward. Also, a curved or arcuate slope can be provided to the cutting face, as shown by example in FIG. 7.
  • the cutting elements include a trailing edge 24, 24a that is substantially parallel to the finished surface of the CMP pad. In other embodiments, however, such as that shown by example in FIG. 3C, the cutting element 16c can include a trailing edge 24c that provides a relief area between the finished surface of the CMP pad and the cutting element. In this manner, the sharpness of the cutting edge 26c of the blade can be increased without requiring a sloped or tapering cutting face 18c.
  • cutting elements 16 shown in FIG. 1 are generally tooth-like, individual projections
  • the cutting elements can include cutting blades. This embodiment is shown by example in FIG. 2, in which cutting elements or blades 16d are arranged across the face of base 14d. While not so required, the cutting blades can have a cutting length "L" at least twice as great as a cutting height ("d" in FIG. 5). The cutting blades can advantageously be used to remove a larger percentage of pad material per pass.
  • the cutting blades can also include varying cutting angles along the length of the cutting blades, and can include individual teeth formed thereon, or therewith.
  • Serrations, protrusions, and the like can also be formed on or in the cutting blades, or attached thereto, to enhance the cutting ability of the teeth or blades.
  • the cutting elements of the present invention can be associated with the base 14 in a variety of manners.
  • the cutting elements and the base are formed from an integral piece of material, such as a polycrystalline diamond compact, a polycrystalline cubic boron nitride compact, and the like.
  • the cutting elements can be bonded, welded or otherwise attached to the base.
  • a spacer layer may be applied to a working surface of a temporary substrate.
  • the cutting elements can be arranged so that at least a portion of each the cutting elements is at least partially embedded in the spacer layer.
  • the cutting elements can be pressed by a variety of mechanisms or means such that tips of the cutting elements come into contact with the temporary substrate.
  • the temporary substrate can define the final leveling configuration (e.g., contour) of the finished pad conditioner/cutting tool.
  • the temporary substrate can include varying degrees and combinations of contour, levelness, slope, steps, etc., according to the desired contours of the pad conditioner/cutting tool.
  • An adhesive may be optionally applied to the temporary substrate and/or the spacer layer and/or the cutting elements to facilitate proper arrangement and temporary attachment.
  • the adhesive used on any noted surface may be any adhesive known to one skilled in the art, such as, without limitation, a polyvinyl alcohol (PVA), a polyvinyl butyral (PVB), a polyethylene glycol (PEG), a pariffin, a phenolic resin, a wax emulsion, an acrylic resin, or combinations thereof.
  • the fixative is a sprayed acrylic glue.
  • the spacer layer may be made from any soft, deformable material with a relatively uniform thickness, and may be selected according to particular needs of manufacturing, future use, compositional considerations of tool precursors, etc.
  • useful materials include, but are not limited to, rubbers, plastics, waxes, graphites, clays, tapes, grafoils, metals, powders, and combinations thereof.
  • the spacer layer may be a rolled sheet comprising a metal or other powder and a binder.
  • the metal may be a stainless steel powder and a polyethylene glycol binder.
  • binders can be utilized, which are well known to those skilled in the art, such as, but not limited to, a polyvinyl alcohol (PVA), a polyvinyl butyral (PVB), a polyethylene glycol (PEG), a paraffin, a phenolic resin, a wax emulsions, an acrylic resin, and combinations thereof.
  • An at least partially uncured resin material can be applied to the spacer layer opposite of the temporary substrate.
  • a mold e.g. of stainless steel or otherwise, may be utilized to contain the uncured resin material during manufacture. Upon curing the resin material, a resin layer is formed, cementing at least a portion of a cutting element.
  • a permanent tool substrate may be coupled to the resin layer to facilitate its use in dressing a CMP pad or in other uses.
  • the permanent substrate may be coupled to the resin layer by means of an appropriate adhesive. The coupling may be facilitated by roughing the contact surfaces between the permanent substrate and the resin layer.
  • the permanent substrate may be associated with the resin material, and thus become coupled to the resin layer as a result of curing. The mold and the temporary substrate can subsequently be removed from the CMP pad dresser once the resin is cured. Additionally, the spacer layer can be removed from the resin layer. This may be accomplished by any means known in the art including peeling, grinding, sandblasting, scraping, rubbing, abrasion, etc.
  • the protrusion of the cutting elements from the resin is dependent on the amount covered or concealed by the spacer layer. Additionally, the arrangement of the cutting elements can be relatively fixed by the resin. As such, the cutting elements can be placed in a variety of configurations, thus creating a variety of configurations of a surface of an assembled tool.
  • the cutting elements can be formed in a variety of manners. As mentioned above, one embodiment includes forming the cutting elements from a polycrystalline diamond compact or a polycrystalline cubic boron nitride compact (individual cutting elements can be formed from the compacts and attached to the base, or the base and the cutting elements can be formed from an integral piece of the compact).
  • the cutting elements can be formed by creating a sintered alumina plate having the basic shape of the cutting elements extending therefrom. A layer of DLC can be coated over this resulting patterned surface. Also, CVDD can be coated over a patterned surface of ceramic. In addition, a sintered SiC plate (with molten silicon used to infiltrate the pores) can be used. In another embodiment, sintered silicon nitride (S ⁇ 3N4) can be used. In addition, other materials can be used as the cutting element, either alone or in combination with other materials, and are to be included in the scope of the disclosure herein. For example, the cutting element can comprise or consist essentially of ceramics, or other diamond or cBN films, including those deposited via chemical vapor deposition (CVD).
  • CVD chemical vapor deposition
  • Non-limiting examples of ceramics that can be used as a cutting element include alumina, aluminum carbide, silica, silicon carbide, silicon nitride, zirconia, zirconium carbide, and mixtures thereof.
  • Cutting elements can be, in one embodiment, sintered masses, partially sintered masses, and/or layers of material attached to the substrate of the tool precursor according to any method known in the art.
  • the cutting element can, in one aspect, include a mixture, homogeneous or otherwise, of a plurality of materials, optionally including abrasive particles.
  • the cutting element can include a plurality of layers of material.
  • the cutting element can include a ceramic overcoated with CVD diamond.
  • each of the cutting elements 16 can include one or a plurality of cutting edges 26 aligned in a common plane 21.
  • each of the cutting elements can include four cutting edges, which can each serve to cut or plane material from a workpiece.
  • a total length of cutting edges per cutting element can be advantageously increased.
  • each cutting element is of substantially the same height, relative to the working surface of the base, all of the cutting edges from all of the cutting elements can be aligned in the same common plane.
  • the cutting device is substantially self-aligned to shave higher regions of the workpiece first, then continue cutting until all "high" points on the workpiece have been reduced, leaving a smooth and flat workpiece surface.
  • the cutting devices of the present invention can be utilized in a number of other applications, including use in planing substantially brittle materials, such as silicon wafers, glass sheets, metals, used silicon wafers to be reclaimed by planarization, LCD glass, LED substrates, SiC wafers, quartz wafers, silicon nitride, zirconia, etc.
  • a wafer to be polished is generally held by a carrier positioned on a polishing pad attached above a rotating platen. As slurry is applied to the pad and pressure is applied to the carrier, the wafer is polished by relative movements of the platen and the carrier.
  • the silicon wafer is essentially ground or polished, by very fine abrasives, to a relatively smooth surface. While grinding of silicon wafers has been used with some success, the process of grinding materials such as silicon wafers often results in pieces of the material being torn or gouged from the body of the material, resulting in a less than desirable finish. This is due, at least in part, to the fact that grinding or abrasive processes utilize very sharp points of abrasive materials (which are often not level relative to one another) to localize pressure to allow the abrasives to remove material from a workpiece.
  • the present invention can utilize one or more sharply angled cutting edges of cutting elements to cut material from a workpiece to finish or plane a surface of the workpiece.
  • the region of the cut will either deform plastically or will crack in a brittle manner. If the plastic deformation is slower than the crack propagation, then the material is known as brittle. The reverse is true for ductile deformation. However, under a high pressure, the rate of crack propagation is suppressed. In this case, a brittle material (e.g. silicon) may exhibit more ductile characteristics, similar to soft metals.
  • the area of the first contact is extremely small (e.g. a few nanometers across). Consequently, the pressure can be very high (e.g. several GPa). Because the cracks are suppressed, the sharp diamond edge can penetrate silicon plastically. As a result, the external energy can be transferred to the very small volume of silicon continually to sustain the ductile cutting. In other words, the sharp cutting edges can shave or plane silicon in a manner not previously achieved.
  • the resulting cutting elements are generally superhard, resulting in little yielding by the cutting elements when pressed against a wafer.
  • hardness is generally a measure of energy concentration, e.g., energy per unit volume
  • the PCD or PcBN compacts of the present invention are capable of concentrating energy to a very small volume without breaking. These materials can also be maintained with a very sharp cutting edge due to their ability to maintain an edge within a few atoms.
  • the penetrating radius is generally be kept relatively small. This is shown by example in FIG. 5, where the depth (or height) of the cutting elements 16 is shown generally by the letter “d" and is on the order of about 0.1 mm.
  • the shape of the cutting edge must be kept relatively sharp; in some cases with a radius on the order of 2 nm.
  • the material of the cutting edge of the present invention is hard enough to withstand deformation during the cutting or planing process. In this manner, both sharpness and hardness of the cutter is realized to ensure the ductility of the workpiece.
  • Each of the cutting elements 16 can include a substantially planar trailing face 24 that can define a workpiece contact area.
  • a combined workpiece contact area of all of the cutting elements can comprise from between about 5% of a total area of the base to about 20% of a total area of the base.
  • the total contact area of all cutting elements can be about 7850 mm 2 .
  • An edge-to-area ratio of each cutting element can be about 4/mm, resulting in a total edge length being about 31400 mm.
  • the cutting devices of the present invention can be utilized in either a wet system or a dry system.
  • the cutting elements can be used to cut or plane chips from a workpiece without the presence of a liquid slurry.
  • the cutting device can be mounted to a holder cushion that can be coupled to a rotatable chuck.
  • the workpiece for example, a silicon wafer or a CMP pad, can be coupled to a vacuum chuck that provides for rotation of the workpiece. Both the rotatable chuck and the vacuum chuck can be rotated in either a clockwise or a counterclockwise direction to remove material from the workpiece.
  • By changing the rotation of one element relative to another more or less material can be removed in a single rotation of the workpiece. For example, if the workpiece and cutting elements are rotated in the same direction (but at different speeds), less material will be removed than if they are rotated counter to one another.
  • a slurry can be applied that can aid in planing the workpiece surface.
  • the slurry can be either a water slurry or a chemical slurry.
  • the chemical can be selected to provide cooling or to react with the surface of the workpiece to soften the workpiece to provide a more efficient cutting process. It has been found that the wear rate of a silicon wafer can be dramatically increased by softening its surface.
  • a chemical slurry that contains an oxidizing agent e.g. H 2 O 2
  • H 2 O 2 an oxidizing agent
  • the PCD cutting devices of the present invention need not necessarily cut the wafer, but rather can scrape the oxide off the surface of the wafer. Consequently, the sharpness of the cutting edge becomes less critical.
  • the service life of the cutting device can be greatly extended by utilizing a slurry. For example, a PCD scraper used with a slurry may last 1000 times longer than a PCD cutter.
  • FIG. 4 illustrates a variety of cutting elements 16g, 16h, 16j in accordance with an embodiment of the invention.
  • the cutting elements can be sized and shaped with rectangular cross sections, oval cross sections, circular cross sections, triangular, polygonal, pyramidal cross sections, etc.
  • the various sized and shaped cutting elements can be formed by varying locations, and widths, of grooves cut on the surface of the PCD or PcBN compacts. While not shown in the figures, the cutting elements can also be formed below the surface of a PCD or a PcBN compact, such that the cutting elements comprise inset cavities that include, for example, circular or polygonal shapes.
  • FIGs. 6A and 6B illustrate another embodiment of the invention in which a plurality of cutting elements 16e and 16f are formed in a PCD base.
  • the present invention can provide for the integral formation from a superhard polycrystalline material of cutting elements having differing sizes and configurations.
  • the larger cutting elements 16e can be used as cutting, planing or dressing elements while the smaller cutting elements 16f can be used primarily as "stopping" elements.
  • the larger cutting elements can extend further from the base of the PCD to cut further, or deeper, into the pad (not shown in this figure) on which the cutting elements are being used.
  • the smaller cutting elements can "bottom out” on the surface of the workpiece to limit further traveling of the larger elements 16e into the workpiece.
  • the larger cutting elements can be made sharper than the smaller cutting elements: for example, they can terminate in an apex point (similar to the cutting elements shown in FIG. 3C), while the smaller cutting elements can terminate in a flat, planar face (similar to the cutting elements shown in FIG. 3B).
  • the larger cutting elements can more easily cut the workpiece than can the smaller cutting elements, causing the smaller elements to serve as depth "stopping" elements.
  • the present invention can provide very accurate control of the depth that the cutting elements cut into a workpiece (e.g., a CMP pad that is being dressed).
  • the cutting elements of the present invention can be formed from an integral piece of polycrystalline superhard material, there can remain a useful excess portion of polycrystalline superhard material below the cutting elements on the base of the cutting device (or that forms the base of the cutting device).
  • the cutting device can be sharpened by removing a thin layer of the superhard material across the entire face of the cutting device in the same pattern that was originally created on the face of the device.
  • Cutting devices of the present invention can thus be relatively easily sharpened or repaired, so long as sufficient polycrystalline material remains beneath the cutting elements to allow for further sharpening of the cutting elements.
  • Example 1 illustrates embodiments of the invention that are presently known. Thus, these examples should not be considered as limitations of the present invention, but are merely in place to teach how to make the best-known systems and methods of the present invention based upon current experimental data. As such, a representative number of systems and methods are disclosed herein.
  • Example 1 illustrates embodiments of the invention that are presently known. Thus, these examples should not be considered as limitations of the present invention, but are merely in place to teach how to make the best-known systems and methods of the present invention based upon current experimental data. As such, a representative number of systems and methods are disclosed herein.
  • Example 1 illustrates of the invention that are presently known. Thus, these examples should not be considered as limitations of the present invention, but are merely in place to teach how to make the best-known systems and methods of the present invention based upon current experimental data. As such, a representative number of systems and methods are disclosed herein.
  • Example 1 illustrates of the invention that are presently known. Thus, these examples should not be considered as limitations of the
  • a PCD compact with sintered polycrystalline diamond coupled with cemented tungsten carbide substrate is used as a blank for EDM machining.
  • the compact disk has a diameter of 34 mm (e.g. Adico), 52 mm (e.g. Adico), 60 mm (e.g. Diamond Innovations), 74 mm (e.g. Element Six), or 100 mm (e.g. Tomei Dia).
  • the typical PCD layer is 400- 600 microns thick.
  • the total thickness (including the WC substrate) can be 1.6 mm or 3.2 mm as standard materials.
  • the PCD surface is fine polished to have an Ra less than about 1 micron.
  • the blank is wire-EDM cut to form zigzag pattern with tip-to-tip distance of about 400 microns and tip-to-valley depth of about 100 microns.
  • the tip angle can be 60, 70, 60, 90 or 100 degrees (relative to a finished surface applied to a pad), which can be varied by the computer setting for traversing the PCD blank.
  • the zigzag pattern produces symmetrical profiles on the vertically sliced blades.
  • the blade (e.g., cutting element) thickness can be less than about 1 mm. If the wire used is thin (e.g. 150 microns) the kerf loss can be minimized so the number of blades per compact disk is maximized.
  • the blades can then be cleaned in an ultrasonic bath with micron diamond suspension to remove all dangling debris, as well as the thermally degraded surface layer with micro cracks and back converted diamond.
  • the blade (e.g., cutting element) can then be anchored to a groove mold that allows the leveling of all cutting tips to within 20 microns. Subsequently, the mold is over cast with epoxy resin to consolidate the blades that are set in a radial pattern on a disk of about 100 mm in diameter by 7 mm thick.
  • the blades can be set with cutting edges vertical to the mold surface or with a controlled tilt.
  • the cutting angle can be adjusted to achieve the optimal grooving result on the polishing pad.
  • the protrusion of the cutting tips above the epoxy matrix is also controlled (e.g. 100 microns). This protrusion can be offset to allow gradual increases of cutting tips. Due to such a controlled spread of cutting amount, the pad can be cleaned and with terraces of asperities that may achieve optimized polishing effects. For example, the high asperities can sweep quickly the protrusion points of the copper deposition on the wafer. They will be flattened soon so the next terrace of asperities can begin polish to make the copper thinner. Finally, the asperities can becoming relatively level to allow buffing of the already thinned copper layer to remove the barrier layer (e.g. TaN).
  • the barrier layer e.g. TaN
  • Example 2 A process similar to that described in Example 1 is used, except that a WC blank is used instead of PCD.
  • the WC blank contains a low amount of cobalt (e.g 6 wt%).
  • the straight blades are set in a fixture and placed in a CVD reactor with methane (1%) hydrogen mixture that is thermally decomposed and dissociated to form carbon and atomic hydrogen.
  • the CVDD coated WC will deposit diamond grains with sharp cutting tips that can be spaced by controlling the nucleation density, sparse nuclei distribution, larger grains, and higher protrusion and further separation.
  • the diamond grains can range from nano crystalline (i.e. the edge is straight) to grains with larger than 10 microns.
  • the low cobalt amount in WC can help diamond retaining by avoiding the back conversion due to its catalystic ability.
  • Example 3 Example 3:
  • Example 5 A process similar to that described in Example 2 is used, except that the blade is sliced from a silicon infiltrated SiC blank.
  • Example 4 A process similar to that described in Example 3 is used, except that the blade is sliced from a sintered micron grained Si3N4.
  • Example 5 A process similar to that described in Example 3 is used, except that the blade is sliced from a sintered micron grained Si3N4.
  • Example 2 A process similar to that described in Example 2 is used, except that the blank is made from yttrium toughened zirconia. (ZrO2) with Ti can also be used as the interface coating buffer for diamond film deposition.
  • ZrO2 zirconia

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Polishing Bodies And Polishing Tools (AREA)

Abstract

L'invention concerne un procédé pour réduire un degré de compression d'un tampon de polissage mécano-chimique (CMP) lors du conditionnement du tampon de CMP. Selon ce procédé, le tampon de CMP est mis en prise avec au moins un élément de coupe extra-dur, cet élément de coupe comprenant une face de coupe qui forme un angle inférieur ou égal à 90° avec une surface finie du tampon de CMP, puis le tampon de CMP et l'élément de coupe sont déplacés l'un par rapport à l'autre dans une direction de façon à obtenir un enlèvement de matière du tampon de CMP au moyen de la face de coupe et conditionner ainsi le tampon de CMP.
PCT/US2007/024169 2006-11-16 2007-11-16 Dispositifs de conditionnement de tampons de cmp et procédés associés WO2008076199A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US86620206P 2006-11-16 2006-11-16
US60/866,202 2006-11-16

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WO2008076199A2 true WO2008076199A2 (fr) 2008-06-26
WO2008076199A3 WO2008076199A3 (fr) 2008-08-21

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US (1) US20080153398A1 (fr)
CN (1) CN101557904A (fr)
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Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9868100B2 (en) 1997-04-04 2018-01-16 Chien-Min Sung Brazed diamond tools and methods for making the same
US9238207B2 (en) 1997-04-04 2016-01-19 Chien-Min Sung Brazed diamond tools and methods for making the same
US9463552B2 (en) 1997-04-04 2016-10-11 Chien-Min Sung Superbrasvie tools containing uniformly leveled superabrasive particles and associated methods
US9199357B2 (en) 1997-04-04 2015-12-01 Chien-Min Sung Brazed diamond tools and methods for making the same
US9221154B2 (en) 1997-04-04 2015-12-29 Chien-Min Sung Diamond tools and methods for making the same
US9409280B2 (en) 1997-04-04 2016-08-09 Chien-Min Sung Brazed diamond tools and methods for making the same
US7516536B2 (en) * 1999-07-08 2009-04-14 Toho Engineering Kabushiki Kaisha Method of producing polishing pad
US8393934B2 (en) 2006-11-16 2013-03-12 Chien-Min Sung CMP pad dressers with hybridized abrasive surface and related methods
US9724802B2 (en) 2005-05-16 2017-08-08 Chien-Min Sung CMP pad dressers having leveled tips and associated methods
US9138862B2 (en) 2011-05-23 2015-09-22 Chien-Min Sung CMP pad dresser having leveled tips and associated methods
US8622787B2 (en) 2006-11-16 2014-01-07 Chien-Min Sung CMP pad dressers with hybridized abrasive surface and related methods
US8678878B2 (en) 2009-09-29 2014-03-25 Chien-Min Sung System for evaluating and/or improving performance of a CMP pad dresser
US8398466B2 (en) 2006-11-16 2013-03-19 Chien-Min Sung CMP pad conditioners with mosaic abrasive segments and associated methods
US20150017884A1 (en) * 2006-11-16 2015-01-15 Chien-Min Sung CMP Pad Dressers with Hybridized Abrasive Surface and Related Methods
BRPI0814936A2 (pt) 2007-08-23 2015-02-03 Saint Gobain Abrasives Inc Concepção otimizada de condidionador de cmp para cmp óxido/metal da próxima geração
KR20100106328A (ko) * 2007-11-13 2010-10-01 치엔 민 성 Ｃｍｐ 패드 드레서
TWI388402B (en) * 2007-12-06 2013-03-11 Methods for orienting superabrasive particles on a surface and associated tools
TWI473685B (zh) * 2008-01-15 2015-02-21 Iv Technologies Co Ltd 研磨墊及其製造方法
CN102341215B (zh) * 2009-03-24 2014-06-18 圣戈班磨料磨具有限公司 用作化学机械平坦化垫修整器的研磨工具
JP5453526B2 (ja) 2009-06-02 2014-03-26 サンーゴバン アブレイシブズ，インコーポレイティド 耐腐食性ｃｍｐコンディショニング工具並びにその作製および使用法
NL1037020C2 (nl) * 2009-06-05 2010-12-07 Auto Cosmetics Hoogeveen Gereedschap en werkwijze voor het reconditioneren van een polijstpad, tevens werkwijze voor het vervaardigen van zo een gereedschap.
WO2011028700A2 (fr) 2009-09-01 2011-03-10 Saint-Gobain Abrasives, Inc. Conditionneur de polissage chimico-mécanique
KR101091030B1 (ko) * 2010-04-08 2011-12-09 이화다이아몬드공업 주식회사 감소된 마찰력을 갖는 패드 컨디셔너 제조방법
WO2012122186A2 (fr) 2011-03-07 2012-09-13 Entegris, Inc. Conditionneur de patin de planarisation chimico-mécanique
WO2012162430A2 (fr) 2011-05-23 2012-11-29 Chien-Min Sung Tampon de polissage mécano-chimique (cmp) à pointes nivelées et procédés associés
CN102229105A (zh) * 2011-06-28 2011-11-02 清华大学 化学机械抛光方法
KR101339722B1 (ko) * 2011-07-18 2013-12-10 이화다이아몬드공업 주식회사 Ｃｍｐ 패드 컨디셔너
WO2013166516A1 (fr) * 2012-05-04 2013-11-07 Entegris, Inc. Tampons de conditionneur de polissage chimicomécanique (cmp) avec amélioration de matière superabrasive
KR102089383B1 (ko) 2012-08-02 2020-03-16 쓰리엠 이노베이티브 프로퍼티즈 컴파니 정밀하게 형상화된 특징부를 갖는 연마 물품 및 그의 제조 방법
JP6474346B2 (ja) 2012-08-02 2019-02-27 スリーエム イノベイティブ プロパティズ カンパニー 精密に成形された形成部を有する研磨要素前駆体及びその作製方法
DE112013005073T5 (de) * 2012-10-19 2015-07-16 Dow Global Technologies Llc Vorrichtung, Systeme, Geräte, und Verfahren zum Schneiden von Materialien, die formbar sind und/oder zusammenfallen können
US9457450B2 (en) 2013-03-08 2016-10-04 Tera Xtal Technology Corporation Pad conditioning tool
TWI511841B (zh) * 2013-03-15 2015-12-11 Kinik Co 貼合式化學機械硏磨修整器及其製法
WO2015143278A1 (fr) * 2014-03-21 2015-09-24 Entegris, Inc. Conditionneur de tampon de polissage mécano-chimique à bords de coupe allongés
CN106078517A (zh) * 2016-08-03 2016-11-09 咏巨科技有限公司 一种抛光垫修整装置
SG11202101908TA (en) * 2018-08-31 2021-03-30 Best Engineered Surface Technologies Llc Hybrid cmp conditioning head
WO2023126761A1 (fr) * 2021-12-31 2023-07-06 3M Innovative Properties Company Disque de conditionnement à microéléments
KR20240011952A (ko) * 2022-07-20 2024-01-29 새솔다이아몬드공업 주식회사 패드 컨디셔너
CN117103123B (zh) * 2023-10-24 2024-01-30 华南理工大学 一种金刚石磨粒修平表面的微纳结构成型控制方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000056068A (ko) * 1999-02-12 2000-09-15 윤종용 패드 컨디셔너의 디스크
EP1075898A2 (fr) * 1999-08-13 2001-02-14 Mitsubishi Materials Corporation Outil et dispositif de dressage
US6439986B1 (en) * 1999-10-12 2002-08-27 Hunatech Co., Ltd. Conditioner for polishing pad and method for manufacturing the same
US20060079160A1 (en) * 2004-10-12 2006-04-13 Applied Materials, Inc. Polishing pad conditioner with shaped abrasive patterns and channels
WO2006039413A2 (fr) * 2004-09-29 2006-04-13 Chien-Min Sung Tampons de polissage mecano-chimique (cmp) a particules orientees, et procedes associes
WO2006124792A2 (fr) * 2005-05-16 2006-11-23 Chien-Min Sung Cutters superdurs et procedes associes

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US621856A (en) * 1899-03-28 Jacob schwarz
US3852078A (en) * 1970-12-24 1974-12-03 M Wakatsuki Mass of polycrystalline cubic system boron nitride and composites of polycrystalline cubic system boron nitride and other hard materials, and processes for manufacturing the same
US4554139A (en) * 1983-09-27 1985-11-19 Prodeco, Inc. Process for producing and decomposing syngenite
US4923490A (en) * 1988-12-16 1990-05-08 General Electric Company Novel grinding wheels utilizing polycrystalline diamond or cubic boron nitride grit
US4925457B1 (en) * 1989-01-30 1995-09-26 Ultimate Abrasive Syst Inc Method for making an abrasive tool
US5049165B1 (en) * 1989-01-30 1995-09-26 Ultimate Abrasive Syst Inc Composite material
GB9006703D0 (en) * 1990-03-26 1990-05-23 De Beers Ind Diamond Abrasive product
US5380390B1 (en) * 1991-06-10 1996-10-01 Ultimate Abras Systems Inc Patterned abrasive material and method
US5247765A (en) * 1991-07-23 1993-09-28 Abrasive Technology Europe, S.A. Abrasive product comprising a plurality of discrete composite abrasive pellets in a resilient resin matrix
JPH0639729A (ja) * 1992-05-29 1994-02-15 Canon Inc 精研削砥石およびその製造方法
GB9310500D0 (en) * 1993-05-21 1993-07-07 De Beers Ind Diamond Cutting tool
EP0702615B1 (fr) * 1993-06-17 1997-10-22 Minnesota Mining And Manufacturing Company Articles abrasifs a motifs, et procedes de fabrication et d'utilisation de ces articles
US5681612A (en) * 1993-06-17 1997-10-28 Minnesota Mining And Manufacturing Company Coated abrasives and methods of preparation
US5453106A (en) * 1993-10-27 1995-09-26 Roberts; Ellis E. Oriented particles in hard surfaces
US5486131A (en) * 1994-01-04 1996-01-23 Speedfam Corporation Device for conditioning polishing pads
US5547417A (en) * 1994-03-21 1996-08-20 Intel Corporation Method and apparatus for conditioning a semiconductor polishing pad
US5536202A (en) * 1994-07-27 1996-07-16 Texas Instruments Incorporated Semiconductor substrate conditioning head having a plurality of geometries formed in a surface thereof for pad conditioning during chemical-mechanical polish
BR9509116A (pt) * 1994-09-30 1997-11-18 Minnesota Mining & Mfg Artigo abrasivo revestido processos para produzir o mesmo e processo para desbastar uma peça dura
US5527424A (en) * 1995-01-30 1996-06-18 Motorola, Inc. Preconditioner for a polishing pad and method for using the same
US5560754A (en) * 1995-06-13 1996-10-01 General Electric Company Reduction of stresses in the polycrystalline abrasive layer of a composite compact with in situ bonded carbide/carbide support
US6371838B1 (en) * 1996-07-15 2002-04-16 Speedfam-Ipec Corporation Polishing pad conditioning device with cutting elements
KR100328108B1 (ko) * 1996-10-15 2002-03-09 아사무라 타카싯 반도체 기판용 연마패드의 드레서, 그 제조방법 및 그것을 사용한 화학적 기계적 연마방법
US6368198B1 (en) * 1999-11-22 2002-04-09 Kinik Company Diamond grid CMP pad dresser
US5921855A (en) * 1997-05-15 1999-07-13 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing system
JP3244454B2 (ja) * 1997-06-05 2002-01-07 理化学研究所 切削研削両用工具
US5921856A (en) * 1997-07-10 1999-07-13 Sp3, Inc. CVD diamond coated substrate for polishing pad conditioning head and method for making same
US6027659A (en) * 1997-12-03 2000-02-22 Intel Corporation Polishing pad conditioning surface having integral conditioning points
US6159087A (en) * 1998-02-11 2000-12-12 Applied Materials, Inc. End effector for pad conditioning
CA2261491C (fr) * 1998-03-06 2005-05-24 Smith International, Inc. Composante de coupe avec resistance amelioree d'un materiau polycristallin et methode de fabrication de celle-ci
JP3295888B2 (ja) * 1998-04-22 2002-06-24 株式会社藤森技術研究所 ケミカルマシンポリッシャの研磨盤用研磨ドレッサ
KR19990081117A (ko) * 1998-04-25 1999-11-15 윤종용 씨엠피 패드 컨디셔닝 디스크 및 컨디셔너, 그 디스크의 제조방법, 재생방법 및 세정방법
US6354918B1 (en) * 1998-06-19 2002-03-12 Ebara Corporation Apparatus and method for polishing workpiece
US6299508B1 (en) * 1998-08-05 2001-10-09 3M Innovative Properties Company Abrasive article with integrally molded front surface protrusions containing a grinding aid and methods of making and using
US6346202B1 (en) * 1999-03-25 2002-02-12 Beaver Creek Concepts Inc Finishing with partial organic boundary layer
US6281129B1 (en) * 1999-09-20 2001-08-28 Agere Systems Guardian Corp. Corrosion-resistant polishing pad conditioner
JP3527448B2 (ja) * 1999-12-20 2004-05-17 株式会社リード Ｃｍｐ研磨布用ドレッサー及びその製造方法
AU2001276591A1 (en) * 2000-08-08 2002-02-18 Element Six (Pty) Ltd Method of producing an abrasive product containing diamond
US20020042200A1 (en) * 2000-10-02 2002-04-11 Clyde Fawcett Method for conditioning polishing pads
US20030207659A1 (en) * 2000-11-03 2003-11-06 3M Innovative Properties Company Abrasive product and method of making and using the same
US8545583B2 (en) * 2000-11-17 2013-10-01 Wayne O. Duescher Method of forming a flexible abrasive sheet article
US6672943B2 (en) * 2001-01-26 2004-01-06 Wafer Solutions, Inc. Eccentric abrasive wheel for wafer processing
KR100428947B1 (ko) * 2001-09-28 2004-04-29 이화다이아몬드공업 주식회사 다이아몬드 공구
KR100449630B1 (ko) * 2001-11-13 2004-09-22 삼성전기주식회사 화학기계적 연마장치의 연마패드 컨디셔닝 장치
US6872127B2 (en) * 2002-07-11 2005-03-29 Taiwan Semiconductor Manufacturing Co., Ltd Polishing pad conditioning disks for chemical mechanical polisher
US20050060941A1 (en) * 2003-09-23 2005-03-24 3M Innovative Properties Company Abrasive article and methods of making the same
US20070060026A1 (en) * 2005-09-09 2007-03-15 Chien-Min Sung Methods of bonding superabrasive particles in an organic matrix
US7150677B2 (en) * 2004-09-22 2006-12-19 Mitsubishi Materials Corporation CMP conditioner
US7300338B2 (en) * 2005-09-22 2007-11-27 Abrasive Technology, Inc. CMP diamond conditioning disk
US7594845B2 (en) * 2005-10-20 2009-09-29 3M Innovative Properties Company Abrasive article and method of modifying the surface of a workpiece

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000056068A (ko) * 1999-02-12 2000-09-15 윤종용 패드 컨디셔너의 디스크
EP1075898A2 (fr) * 1999-08-13 2001-02-14 Mitsubishi Materials Corporation Outil et dispositif de dressage
US6439986B1 (en) * 1999-10-12 2002-08-27 Hunatech Co., Ltd. Conditioner for polishing pad and method for manufacturing the same
WO2006039413A2 (fr) * 2004-09-29 2006-04-13 Chien-Min Sung Tampons de polissage mecano-chimique (cmp) a particules orientees, et procedes associes
US20060079160A1 (en) * 2004-10-12 2006-04-13 Applied Materials, Inc. Polishing pad conditioner with shaped abrasive patterns and channels
WO2006124792A2 (fr) * 2005-05-16 2006-11-23 Chien-Min Sung Cutters superdurs et procedes associes

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US20080153398A1 (en) 2008-06-26
WO2008076199A3 (fr) 2008-08-21
TW200837823A (en) 2008-09-16
CN101557904A (zh) 2009-10-14

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