WO2008075715A1 - Procédé de fabrication d'un plateau à tuyères pour une tête de décharge de liquide, plateau à tuyères pour une tête de décharge de liquide et tête de décharge de liquide - Google Patents
Procédé de fabrication d'un plateau à tuyères pour une tête de décharge de liquide, plateau à tuyères pour une tête de décharge de liquide et tête de décharge de liquide Download PDFInfo
- Publication number
- WO2008075715A1 WO2008075715A1 PCT/JP2007/074412 JP2007074412W WO2008075715A1 WO 2008075715 A1 WO2008075715 A1 WO 2008075715A1 JP 2007074412 W JP2007074412 W JP 2007074412W WO 2008075715 A1 WO2008075715 A1 WO 2008075715A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- etching
- discharge head
- nozzle plate
- hole
- liquid discharge
- Prior art date
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 56
- 238000005530 etching Methods 0.000 claims abstract description 92
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 235000020637 scallop Nutrition 0.000 claims abstract description 22
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 11
- 241000237509 Patinopecten sp. Species 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 230000002940 repellent Effects 0.000 claims description 10
- 239000005871 repellent Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000001312 dry etching Methods 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 5
- 238000007599 discharging Methods 0.000 abstract description 6
- 241000237503 Pectinidae Species 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 description 19
- 238000000576 coating method Methods 0.000 description 19
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- 238000009623 Bosch process Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910018503 SF6 Inorganic materials 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 5
- 229960000909 sulfur hexafluoride Drugs 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- -1 Polytetrafluoroethylene Polymers 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- BHWBMOFUXJUDJW-UHFFFAOYSA-N prop-1-ene hexahydrofluoride Chemical group CC=C.F.F.F.F.F.F BHWBMOFUXJUDJW-UHFFFAOYSA-N 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/162—Manufacturing of the nozzle plates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1628—Manufacturing processes etching dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1629—Manufacturing processes etching wet etching
Definitions
- the present invention relates to a method for manufacturing a nozzle plate for a liquid discharge head, a nozzle plate for a liquid discharge head, and a liquid discharge head.
- inkjet printers are required to print at high speed and high resolution.
- a method for forming the components of the ink jet recording head used in this printer there is a method using a semiconductor process for a silicon substrate or the like, which is a fine processing technique in the micromachine field.
- One of the components of these ink jet recording heads is a nozzle plate that constitutes an ink jet recording head. It is known that nozzle holes for discharging droplets are formed in this nozzle plate by etching a silicon substrate.
- ICP Inductively Coupled Plasma
- Patent Document 1 JP-A-2-105413
- Patent Document 2 JP-A-2005-144571 (Page 5)
- Patent Document 3 Japanese Unexamined Patent Publication No. 2006-130868
- a hole formed by using the Bosch process described in Patent Document 3 is used as an ink supply port of the ink jet recording head.
- the side wall of this supply port has a corrugated shape called scallop, and this is shown in Figure 7.
- 100 is a Si substrate, and 400 is an etching mask.
- the scallop convex portion having the height indicated by a above has an ink supply port as long as it uses an anisotropic etching method that alternately switches between etching and formation of a sidewall protective film (deposition).
- etching etching
- formation of a sidewall protective film (deposition) etching and formation of a sidewall protective film (deposition).
- This convex portion has a fragile structure that becomes gradually thinner toward the inside of the through hole, and the opening portion is particularly thin because it may be directly under the etching mask. Moreover, it is located in the place which receives an external force easily from the outside.
- the opening shape of the nozzle from which the droplets are discharged changes, and as a result, the discharge performance deteriorates.For example, when there are a plurality of discharge holes, the discharge performance is uneven. The formed image quality will deteriorate. In addition, the chipped portion enters the inside of the nozzle and the discharge hole is clogged, causing a problem that the droplet is not discharged!
- the present invention has been made in view of the above problems, and its object is to manufacture a nozzle plate for a liquid discharge head that is easy to manufacture and enables stable ink discharge.
- a method, a nozzle plate for a liquid discharge head, and a liquid discharge head including the nozzle plate for the liquid discharge head are provided.
- a second step of removing the scallop at the opening of the through-hole by etching the surface of the Si substrate on which the through-hole on the side where etching of the etching method is started is formed
- a manufacturing method of a nozzle plate for a liquid discharge head wherein the opening of the through hole on the surface side etched in the second step is used as a discharge port from which liquid droplets are discharged.
- a nozzle plate for a liquid discharge head which is composed of a silicon substrate having a through-hole having a scallop on the inner wall and discharges liquid through the through-hole, and discharges the liquid in the through-hole of the silicon substrate.
- the liquid discharge head nozzle plate is characterized in that the inner wall on the side to be cut has a shape from which the convex portion of the scallop is removed.
- a liquid discharge head comprising the nozzle plate for a liquid discharge head according to 6.5.
- the opening portion of the through-hole of the scallop formed on the inner wall of the through-hole by the etching of the Bosch process. Has been removed.
- the nozzle for a liquid discharge head that is easy to manufacture and enables stable ink discharge.
- a plate manufacturing method can be provided.
- FIG. 1 is a diagram showing an example of an ink jet recording head.
- FIG. 2 is a cross-sectional view of an ink jet recording head.
- FIG. 3 is a diagram showing an example around a discharge port formed in a nozzle plate.
- FIG. 4 is a diagram showing a process of forming a large diameter portion.
- FIG. 5 is a diagram showing a process of forming a small diameter portion.
- FIG. 6 is a diagram for explaining the removal of the surface on the discharge port side of the nozzle plate.
- FIG. 7 is a diagram for explaining a waveform shape called a scallop formed by the Bosch process.
- FIG. 1 schematically shows a nozzle plate 1, a body plate 2, and a piezoelectric element 3 constituting an ink jet recording head (hereinafter referred to as a recording head) A which is an example of a liquid discharge head. ing.
- a plurality of nozzles 11 for discharging ink are arranged.
- a pressure chamber groove 24 serving as a pressure chamber an ink supply path groove 23 serving as an ink supply path, a common ink chamber groove 22 serving as a common ink chamber, and Ink supply port 21 is formed!
- the flow path unit M is formed by bonding the nozzle plate 1 and the body plate 2 so that the nozzles 11 of the nozzle plate 1 and the pressure chamber grooves 24 of the body plate 2 correspond one-to-one.
- the reference numerals of the pressure chamber groove, the supply path groove, and the common ink chamber groove used in the above description are also used for the pressure chamber, the supply path, and the common ink chamber, respectively.
- FIG. 2 schematically shows a cross section of the recording head A at the positions of YY of the nozzle plate 1 and ⁇ - ⁇ of the body plate 2.
- the piezoelectric element 3 is attached to the flow path unit ⁇ as the ink discharge actuator and bonded to the surface of the bottom 25 of each pressure chamber 24 opposite to the surface to which the nozzle plate 1 of the body plate 2 is bonded.
- the recording head ⁇ is completed.
- Driving noise voltage is applied to each piezoelectric element 3 of the recording head A, and vibration generated from the piezoelectric element 3 is transmitted to the bottom 25 of the pressure chamber 24, and the pressure in the pressure chamber 24 is reduced by the vibration of the bottom 25.
- FIG. 3 shows a peripheral portion of one nozzle 11 provided in the nozzle plate 1.
- the nozzle 11 is composed of a small diameter portion 14 and a large diameter portion 15 as shown in FIG.
- a liquid repellent layer 45 is provided as a more preferable form on the surface 12 where the discharge port 13 for discharging the droplets of the small diameter portion 14 is provided.
- the large-diameter portion 15 and the small-diameter portion 14 are typically formed by using an anisotropic etching method in which etching and coating (formation and deposition of a sidewall protective film) are repeated on the inner wall, and scallops that are seen are typically shown. Show.
- a method for forming the large diameter portion 15 on the Si substrate 30 is not particularly limited, but an anisotropic etching method in which etching and coating are alternately repeated as in the small diameter portion 14 described later can be used.
- a Si substrate 30 is prepared in which a thermal oxide film 32 having an SiO force serving as an etching mask when etching by this anisotropic etching method is provided on both surfaces.
- a photoresist pattern 34a for forming the large diameter portion 15 is formed. (Fig. 4 (c)).
- the photoresist pattern 34a as an etching mask, for example, dry etching using CHF
- a thermal oxide film pattern 32a is formed by etching (FIG. 4 (d)), and this is used as an etching mask in the anisotropic etching method.
- the large diameter portion 15 is formed by an anisotropic etching method in which etching and coating are alternately repeated (FIG. 4 (f)).
- An etching apparatus that performs anisotropic etching is preferably an RIE apparatus that uses ICP.
- RIE apparatus that uses ICP.
- sulfur hexafluoride (SF) is used as an etching gas during etching, and deposition gas is used during coating.
- fluorocarbon C F
- C F fluorocarbon
- the large diameter portion 15 is completed (Fig. 4 (g)).
- the method of forming the large diameter portion 15 is not limited to the force S, which is an anisotropic etching method in which etching and coating are alternately repeated in the above.
- the formation conditions may be determined by conducting experiments and the like using a method and an apparatus for forming the large-diameter portion 15 in advance so that the depth (length) of the large-diameter portion 15 becomes a predetermined depth.
- the formation of the small diameter portion 14 will be described with reference to FIG.
- the small-diameter portion 14 is formed using an anisotropic etching method in which etching and coating are alternately repeated.
- the formation method is the same as in the case of the large diameter portion 15 described above.
- a photoresist 44 is applied to the surface of the thermal oxide film 31 on the side where the small diameter portion 14 is formed (FIG. 5 (b)). Then, a photoresist pattern 44a for forming the small diameter portion 14 is formed (FIG. 5 (c)). A thermal oxide film pattern 31a is formed using the photoresist pattern 44a as an etching mask (FIG. 5 (d)), and this is used as an etching mask in the anisotropic etching method. After removing the photoresist pattern 44a (FIG.
- a scallop as shown in Fig. 6 (a) is formed on the inner wall of the small-diameter portion 14 shown in Fig. 5 (g) formed by using the anisotropic etching method in which etching and coating are alternately repeated as described above. Is formed, and the convex portion 63 in the discharge port 13 is in a state of protruding toward the inside of the discharge port 13.
- the convex portion 63 has a fragile structure that gradually becomes thinner toward the inside of the discharge port 13, and is located in a position where the nozzle plate having the discharge port 13 is easily subjected to force from the outside. ing.
- the convex part 63 breaks or breaks immediately, the shape of the outlet 13 may change, or the damaged part may enter the small diameter part 14 from the outlet 13 and the nozzle may become clogged. To do. As a result, the droplets are not discharged stably and the printing quality is deteriorated.
- the etching method for removing the removed portion 60 is not particularly limited, but SF, CHF, CF, A
- the removed portion 60 having a desired thickness can be accurately removed from the surface of the Si substrate 30.
- the thickness of the removed portion 60 to be removed from the surface of the Si substrate 30 is preferably 0.1 ⁇ m or more.
- the upper limit of the thickness of the removed portion 60 need not be particularly limited, but the unevenness of the scallop formed by repeating the etching and coating in an anisotropic etching method in which etching and coating are alternately repeated as one cycle. Excludes the thickness reaching the tip of the part.
- the upper limit of the thickness of the removed portion 60 is preferably within the depth of the hole formed in the first one cycle of the anisotropic etching method in which etching and coating are alternately repeated from the viewpoint of removal efficiency. More preferably, it is within 70% of the depth of the hole formed in the first cycle.
- the length of the small diameter portion 14 affects the droplet discharge performance. For this reason, when the surface of the Si substrate having the discharge port 13 of the small diameter portion 14 is etched, the length of the small diameter portion 14 is shortened, and in some cases, the discharge performance may be affected. In such a case, the length at the time of forming the small-diameter portion 14 may be determined in advance by considering the thickness to be removed by etching.
- the liquid repellent layer 47 will be described. It is preferable to provide a liquid repellent layer 45 on the surface of the nozzle plate 1 shown in FIG. By providing the liquid repellent layer 45, it is possible to suppress the seepage and spread of the liquid from the discharge port 13 as the liquid becomes familiar with the discharge surface 12. Specifically, for example, if the liquid is water, a material having water repellency is used, and if the liquid is oil, a material having oil repellency is used.
- FEP tetrafluoroethylene, hexafluoride Propylene
- PTFE Polytetrafluoroethylene
- Fluorosiloxane Fluoroalkylsilane, Amorphous perfluoro-oreo resin, etc.
- the thickness of the film is not particularly limited! /, But it is generally preferable to set the force to 0 ⁇ 1 H m force, or 3 H m! / ⁇ .
- the liquid repellent layer 45 may be formed directly on the ejection surface 12 of the nozzle plate 1 or the liquid repellent layer.
- a nozzle plate 1 having a nozzle composed of a small diameter portion 14 and a large diameter portion 15 shown in FIG. 3 was produced.
- description will be made with reference to FIGS.
- a Si substrate having a thermal oxide film (SiO 2) 31 and 32 having a thickness of 200 m and a thickness of 1 m on both sides was prepared.
- a large-diameter portion 15 having a diameter of 100 m was prepared by using an anisotropic etching method in which etching and coating were alternately repeated as described above.
- thermal oxide film 32 was etched using the photoresist pattern 34a as an etching mask to form a thermal oxide film pattern 32a (FIG. 4 (d)).
- etching of the Si substrate 30 is performed by an anisotropic etching method in which etching and coating are alternately repeated using the etched thermal oxide film pattern 32a as an etching mask. ( Figure 4 (f)).
- Figure 4 (f) As an apparatus for performing this anisotropic etching method, Surface
- a small-diameter portion having a diameter of 5 m is formed using an anisotropic etching method in which etching and coating are alternately repeated on the Si substrate 30 having the large-diameter portion 15 manufactured as described above along FIG. 14 was produced.
- anisotropic etching of the Si substrate 30 is performed using an anisotropic etching method in which etching and coating are alternately repeated using the thermal oxide film pattern 31a as an etching mask. Went.
- the conditions of the Bosch process performed were the same as the conditions for forming the large-diameter part described above.
- the cycle of alternately repeating etching and coating was performed 21 times, and the small-diameter part of ⁇ 5 m penetrated the large-diameter part and nozzles. was completed (Fig. 5 (f)).
- the thermal oxide film pattern 31a was removed by dry etching using CHF (Fig. 5 (g)).
- the surface of the Si substrate 30 on the side where the small-diameter portion 14 is formed is etched under the following etching conditions so that the thickness of the removed portion 60 is 0.332111 as shown in FIG. 6 (b). Part 60 was removed.
- the nozzle plate 1 having the nozzles 11 as shown in FIG. 1 was completed by the above procedure.
- the liquid repellent tank 45 shown in FIG. 3 is not provided.
- a body plate 2 as shown in FIG. 1 was manufactured.
- a known photolithographic process resist coating, exposure, development
- a Si anisotropic dry etching technique are used to form a pressure chamber groove 24 that serves as a plurality of pressure chambers respectively communicating with the nozzle 11.
- An ink supply groove 23 serving as a plurality of ink supply paths communicating with the chamber, a common ink chamber groove 22 serving as a common ink chamber communicating with the ink supply, and an ink supply port 21 were formed.
- droplet discharge head J a droplet discharge head
- a droplet discharge head (droplet discharge head H is the same as the above except that a nozzle plate that does not remove the removal portion 60 on the surface of the Si substrate shown in FIG. ).
- a discharge experiment was performed using the droplet discharge head J and the droplet discharge head H.
- a cycle of applying a 30 kHz pulse signal at 1 second intervals for 1 second as a droplet discharge signal to the piezo element 3 was performed for 5 hours continuously.
- the peripheral part of the discharge port of both nozzle plates was observed using SEM (500 times magnification).
- SEM 500 times magnification
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
L'invention concerne un procédé de fabrication d'un plateau à tuyères pour une tête de décharge de liquide, le plateau à tuyères étant fabriqué facilement et déchargeant de l'encre de façon stable. Le procédé comprend un premier traitement pour former un trou traversant, ayant des découpes dans sa paroi interne, dans un substrat Si par gravure anisotrope qui répète de façon alternée la gravure et la formation de films de protection de paroi latérale, et comprend également un second traitement pour retirer les découpes dans l'ouverture du trou traversant en soumettant une surface du substrat Si à une gravure, la surface étant la surface sur le côté où la gravure par la gravure anisotrope a démarré et à partir de laquelle le trou traversant a été formé. L'ouverture du trou traversant qui est sur le côté soumis à la gravure dans le second traitement est une ouverture de décharge pour décharger du liquide.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006344054 | 2006-12-21 | ||
JP2006-344054 | 2006-12-21 |
Publications (1)
Publication Number | Publication Date |
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WO2008075715A1 true WO2008075715A1 (fr) | 2008-06-26 |
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ID=39536342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2007/074412 WO2008075715A1 (fr) | 2006-12-21 | 2007-12-19 | Procédé de fabrication d'un plateau à tuyères pour une tête de décharge de liquide, plateau à tuyères pour une tête de décharge de liquide et tête de décharge de liquide |
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WO (1) | WO2008075715A1 (fr) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018002778A (ja) * | 2016-06-28 | 2018-01-11 | セイコーエプソン株式会社 | 水系インク組成物および液滴吐出方法 |
JP2020059768A (ja) * | 2018-10-05 | 2020-04-16 | セイコーエプソン株式会社 | 水系インクジェットインク組成物及びインクジェット記録方法 |
US11787963B2 (en) | 2020-01-22 | 2023-10-17 | Seiko Epson Corporation | Aqueous ink jet ink composition and ink jet recording method |
JP7490963B2 (ja) | 2020-01-22 | 2024-05-28 | セイコーエプソン株式会社 | 水系インクジェットインク組成物及びインクジェット記録方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005212132A (ja) * | 2004-01-27 | 2005-08-11 | Fuji Xerox Co Ltd | インクジェット記録ヘッド及びその製造方法 |
JP2006045656A (ja) * | 2004-08-09 | 2006-02-16 | Fuji Xerox Co Ltd | シリコン構造体製造方法、モールド金型製造方法、成形部材製造方法、シリコン構造体、インクジェット記録ヘッド、及び、画像形成装置 |
-
2007
- 2007-12-19 WO PCT/JP2007/074412 patent/WO2008075715A1/fr active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005212132A (ja) * | 2004-01-27 | 2005-08-11 | Fuji Xerox Co Ltd | インクジェット記録ヘッド及びその製造方法 |
JP2006045656A (ja) * | 2004-08-09 | 2006-02-16 | Fuji Xerox Co Ltd | シリコン構造体製造方法、モールド金型製造方法、成形部材製造方法、シリコン構造体、インクジェット記録ヘッド、及び、画像形成装置 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018002778A (ja) * | 2016-06-28 | 2018-01-11 | セイコーエプソン株式会社 | 水系インク組成物および液滴吐出方法 |
JP2020059768A (ja) * | 2018-10-05 | 2020-04-16 | セイコーエプソン株式会社 | 水系インクジェットインク組成物及びインクジェット記録方法 |
US11591490B2 (en) | 2018-10-05 | 2023-02-28 | Seiko Epson Corporation | Aqueous ink jet ink composition and ink jet recording method |
JP7344458B2 (ja) | 2018-10-05 | 2023-09-14 | セイコーエプソン株式会社 | 水系インクジェットインク組成物及びインクジェット記録方法 |
US11787963B2 (en) | 2020-01-22 | 2023-10-17 | Seiko Epson Corporation | Aqueous ink jet ink composition and ink jet recording method |
JP7490963B2 (ja) | 2020-01-22 | 2024-05-28 | セイコーエプソン株式会社 | 水系インクジェットインク組成物及びインクジェット記録方法 |
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