WO2008053987A1 - Substrat de circuit à électrode traversante, procédé de formation d'un substrat de circuit à électrode traversante, procédé de formation de trou d'introduction, et pièce électronique à trou d'introduction - Google Patents

Substrat de circuit à électrode traversante, procédé de formation d'un substrat de circuit à électrode traversante, procédé de formation de trou d'introduction, et pièce électronique à trou d'introduction Download PDF

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Publication number
WO2008053987A1
WO2008053987A1 PCT/JP2007/071377 JP2007071377W WO2008053987A1 WO 2008053987 A1 WO2008053987 A1 WO 2008053987A1 JP 2007071377 W JP2007071377 W JP 2007071377W WO 2008053987 A1 WO2008053987 A1 WO 2008053987A1
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WO
WIPO (PCT)
Prior art keywords
hole
conductor
plating
forming
copper
Prior art date
Application number
PCT/JP2007/071377
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English (en)
Japanese (ja)
Inventor
Kenichi Mitsumori
Original Assignee
Alps Electric Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2006299253A external-priority patent/JP2010021164A/ja
Priority claimed from JP2006299252A external-priority patent/JP2010021163A/ja
Application filed by Alps Electric Co., Ltd. filed Critical Alps Electric Co., Ltd.
Publication of WO2008053987A1 publication Critical patent/WO2008053987A1/fr

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/422—Plated through-holes or plated via connections characterised by electroless plating method; pretreatment therefor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0055—After-treatment, e.g. cleaning or desmearing of holes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/095—Conductive through-holes or vias
    • H05K2201/09563—Metal filled via

Definitions

  • Penetration electrode circuit board formation method of penetration electrode circuit board, formation method of conduction hole, and electronic component having conduction hole
  • the present invention relates to a through electrode circuit board, a method for forming a through electrode circuit board, a method for forming a conduction hole, and an electronic component having a conduction hole, in particular, on the inner surface of a through hole formed in the board.
  • the present invention relates to a method for forming a conduction hole by using a plating method to form a conduction hole formed by filling a through hole formed in the metal conductor with a metal conductor, and an electronic component such as a substrate on which the conduction hole is formed.
  • a film having sandblast resistance is formed on the surface of an insulating material such as glass and the like, and the formed film is penetrated. An opening is formed at a location where an electrode is to be formed, thereby forming a sandblast resistant mask. Then, abrasive particles are sprayed onto the substrate coated with the anti-sandblast mask, the substrate is gradually crushed by the abrasive particles to form through holes, and then the anti-sandblast mask is removed.
  • a power supply film of a copper alloy such as Cr Cu is formed on the inner surface of the through hole formed in the substrate by sputtering or the like.
  • a through-electrode circuit board in which a through-electrode penetrating the front surface and the back surface of the substrate is formed by disposing a conductor on the power supply film formed on the inner surface of the through-hole by an electric contact method (For example, refer to Patent Document 1).
  • a multilayer wiring board used for an electronic component such as a semiconductor is formed.
  • a substrate made of glass, ceramic, resin, etc. is filled with a conductive metal in a through hole (through hole) that penetrates the substrate to electrically connect the conductor patterns formed on both sides of the substrate.
  • Conductor-filled through-holes (hereinafter referred to as via holes and! /, U) are formed.
  • Patent Document 2 As a method for forming the conduction hole, for example, as shown in Japanese Patent Application Laid-Open No. 2005-96964 (Patent Document 2), a conductive hole is formed in a cylindrical through hole penetrating a substrate formed by a sandblast method or the like. There is a method of filling a metal which becomes a conductor by the above method.
  • Patent Document 2 In the method disclosed in Patent Document 2, first, a cylindrical through hole is formed in a substrate made of an insulating material, and then a thin film is formed on the substrate surface including the inner wall of the through hole by an electroless plating method. A metal layer is formed. After that, the resist applied so as to cover the thin film metal layer including the through hole is subjected to patterning to expose a portion of the thin film metal layer where the through hole and the wiring pattern are to be formed. Next, electroplating is performed using the thin film metal layer as a power feeding layer to fill the through holes and form a plated metal layer on the exposed surface of the thin film metal layer. After that, the resist is removed, and the exposed thin metal layer is removed to obtain a wiring board having a desired wiring pattern on both sides of the board and a conductive hole having an end connected to the wiring pattern. It is.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2002-359446
  • Patent Document 2 Japanese Patent Laid-Open No. 2002-309376
  • the present invention provides a through electrode circuit board in which the airtightness of the board in the through electrode circuit board and in particular, a copper plating film as a conductor formed by an electroless plating method is improved. And it aims at providing the formation method.
  • the conventional method for forming a conduction hole has a problem that it takes a considerable time to fill the through hole by plating.
  • the formation rate of copper plating is usually several tens of ⁇ m / h when the through hole is filled with copper plating by the electrolytic plating method. The formation rate was usually about 1 ⁇ m / h, and a lot of time was spent on the filling.
  • the present invention has been made in view of these points, and a method for forming a conduction hole capable of forming a conduction hole in which a through hole is filled with a metal conductor in a short time rather than airtight.
  • An object of the present invention is to provide an electronic component having a through hole.
  • the feature of the through-electrode circuit board according to the present invention is a through-electrode circuit board having a through-electrode formed by filling a metal conductor in the through-hole, An electroless copper plating film is formed on the inner wall surface smoothened by etching.
  • the through hole is formed of an electroless tin silver plating film further containing tin and silver as main components on the copper plating film. It is in the point of being laminated.
  • the through-electrode circuit board having such a structure can prevent oxidative deterioration of the surface of the electroless copper plating film by the electroless tin-silver plating film formed thereon, so that the through-electrode The airtightness between the electroless copper plating film and the conductor to be filled becomes better.
  • a method of forming a through electrode circuit board according to the present invention is a method of forming a through electrode circuit board having a through electrode in which a through hole is filled with a metal conductor, the through electrode being An etching treatment process for treating the inner wall surface of the through hole formed in the substrate with an etching solution, and a first plating treatment process for forming a copper plating film on the inner wall surface of the through hole using an electroless copper plating solution And a conductor filling process for filling the through hole with a metal conductor It is in the point which goes through a process in order.
  • the inner wall surface of the through hole can be smoothed by removing fine irregularities by etching, so that the inner wall surface of the through electrode and the first plating process step can be performed.
  • the airtightness with the formed electroless copper plating film can be made excellent.
  • Another feature of the method for forming a through-electrode circuit board according to the present invention is that the electroless tin containing tin and silver as main components in the upper layer of the copper plating film after the first plating treatment step.
  • the second plating process is to form a silver plating film.
  • Another feature of the method for forming a through electrode circuit board according to the present invention is that, in the first plating treatment step, the copper plating solution in which the substrate is immersed is copper ions, nickel ions, a reducing agent. Formaldehyde and tartaric acid or tartrate as a complexing agent, and the addition amount of the copper ion is 0.041-0.05 mol / L, 1 to 30 mol.
  • the conductor metal filling the through hole is one of solder, copper, and silver. is there.
  • a characteristic of the method for forming a conduction hole of the present invention is that a first plating treatment step of forming a plating film on the inner wall surface of the through hole formed in the base material of the electronic component using an electroless plating solution
  • the inner wall surface of the through hole is subjected to a squeezing process, whereby the adhesion between the inner wall surface of the conduction hole, which is the surface to be processed, and the plating film can be increased, and the conductor is placed in the through hole.
  • a squeezing process whereby the adhesion between the inner wall surface of the conduction hole, which is the surface to be processed, and the plating film can be increased, and the conductor is placed in the through hole.
  • the plating method in the second plating process may be either an electroless plating method or an electrolytic plating method.
  • Another feature of the method for forming a conduction hole of the present invention is that the conductor has a spherical shape! / Is a spindle shape.
  • the spherical or spindle-shaped conductor is fitted into the through hole so that the thickest part of the conductor is in contact with the inner wall of the through hole.
  • electrical conduction can be ensured between the contact formed on the inner wall surface of the through hole, the conductor disposed so as to be in contact with the contact, and the fill. Connection reliability is excellent.
  • another feature of the method for forming a conduction hole of the present invention is that an etching treatment step of treating the inner wall surface of the through hole with an etching solution is performed before the first plating treatment step.
  • the inner wall surface of the through hole is treated with an etching solution. Since the defective part consisting of fine irregularities on the surface to be processed can be removed by etching to make it a smooth surface, gaps may be formed between the base material and the padding conductor due to remaining microcracks or the like. Can be prevented.
  • the etching process includes the case where the through hole is formed by etching the substrate with an etching solution. Even in this case, the inner wall surface of the through hole is smoothed with an etching solution.
  • the copper plating solution in which the base material is immersed is copper ion, nickel ion, or formaldehyde as a reducing agent.
  • Dehydride and tartaric acid or tartrate as a complexing agent and the addition amount of the copper ion is 0.041—0.055 mol / L, and the addition amount of the nickel ion is relative to lOOmol of the copper ion. ;! To 30 mol.
  • the copper-containing liquid copper ion, nickel ion, formaldehyde, and tartaric acid or tartrate are added, and the addition amount of the copper ion is set to 0.041 to 0. 055mol /, and the amount of added calories of the above-mentioned Muckenoley is 1-30 mol per 100 mol of the same-named, so that sufficient adhesion between the substrate and the copper plating film can be secured. S can.
  • the resistance can be prevented from becoming significantly high.
  • a feature of the method for forming a conduction hole of the present invention is that, after the first plating treatment step in which electroless plating is performed, the substrate is heated or heated while being pressurized. -It is in the point which passes through a pressure treatment process.
  • the base material is heated, whereby the inner wall surface of the through hole as the surface to be processed and the first plating Hydrogen which is formed in the treatment process and present at the interface with the attached film can be removed, and a gap between the inner wall surface and the attached film can be obtained by heating the substrate while applying pressure.
  • the hydrogen that has entered the interface between the inner wall surface and the plating film can be removed.
  • the force S improves the adhesion of the plating film to the inner wall surface.
  • the electronic component having a conduction hole is an electronic component having a conduction hole in which a through hole is filled with a metal conductor, and an inner wall surface of the conduction hole is plated.
  • a conductor having at least a surface treated so as to be plated is inserted and arranged, and the void portion in the through hole is filled by fitting.
  • the pad formed on the inner wall surface of the through-hole, the conductor whose surface is treated so as to be plated, and the gap portion are filled.
  • the through hole acts as a conduction hole due to conduction with the plating film.
  • the conduction hole provided with the conductor is excellent in airtightness and reliability of electrical connection.
  • the invention's effect Thus, according to the through electrode circuit board and the method of forming the same of the present invention, the airtightness between the board and the copper plating film as the conductor in the through electrode can be improved, and the through electrode circuit board is obtained. Is excellent in reliability of electrical connection.
  • a conduction hole formed by filling the through hole with a metal conductor can be formed in a short time because of airtightness.
  • the electronic components possessed have excellent electrical connection reliability.
  • FIG. 1 A flowchart showing each step of the method for forming a through electrode circuit board of the present embodiment.
  • FIG. 2 Pre-processing in the method for forming the through electrode circuit board of the present embodiment shown in FIG.
  • FIG. 3] (a) to (h) are schematic diagrams showing respective steps from the stage of pretreatment of the substrate to the formation of the through electrode in the through electrode circuit board forming method of the present embodiment.
  • FIG. 4 is an enlarged cross-sectional view of the main part of the through silicon via circuit board in the present embodiment.
  • FIG. 5 is a flowchart showing each step of the method for forming a conduction hole of the present embodiment.
  • FIG. 6 is a flow chart showing each process up to forming a through hole in which a conductor metal is embedded in a base material of an electronic component, which is a pretreatment in the method for forming a conduction hole of the present embodiment shown in FIG.
  • FIG. 7] (a) to (h) are schematic views showing respective steps from the stage of pretreatment of the base material to formation of the conduction hole 8 in the conduction hole forming method of the present embodiment.
  • FIG. 8 is an enlarged cross-sectional view of a main part of an electronic component having a conduction hole in the present embodiment.
  • FIG. 1 is a flowchart showing the steps of the method for forming a through-electrode circuit board according to the present embodiment
  • FIG. 2 shows the process for forming the through-electrode circuit board according to the present embodiment shown in FIG.
  • It is a flowchart which shows each process until it forms the through-hole by which a conductor metal is embed
  • Figures 3 (a) to (!) Show the shape of the through electrode of this embodiment. It is the schematic which shows each process from the stage of the pre-processing of the said base material to a formation method until a penetration electrode is formed.
  • FIG. 4 is an enlarged cross-sectional view of a main part of the through electrode circuit board according to the present embodiment.
  • the metal filled in the through hole is not limited to solder, and various conductive metals such as copper and silver can be used.
  • the substrate is not limited to a glass substrate.
  • a substrate made of a resin such as polyimide, epoxy, or polycarbonate can be used with force S.
  • a glass substrate 1 is prepared in which a copper plating 9 as a conductive metal is filled later and a through hole 2 to be a through electrode 8 is formed.
  • This glass substrate 1 is irradiated with ultraviolet rays (ultraviolet treatment: ST11) or cleaned with pure water as part of the pretreatment (ST1) for forming the through electrode 8 (cleaning treatment: ST12). It is preferable to clean it by such means. This is because impurities such as dust, fats and oils adhering to the glass substrate 1 as a base material are removed in advance.
  • the through hole 2 is formed in the glass substrate 1 as a part of the pretreatment (ST1) by a known drilling method such as an etching method or a sandblast method.
  • a known drilling method such as an etching method or a sandblast method.
  • a resist 4 is first applied to the glass substrate 1 shown in FIG. 3 (a), and then exposed and developed as shown in FIG. 3 (b).
  • a circular punching pattern having a desired diameter dimension is formed on the front and back surfaces of the glass substrate 1 (pattern forming process: ST13).
  • etching is performed using an etching solution under conditions of a predetermined temperature, an etching rate, and an etching time, and as shown in FIG.
  • a through-hole is formed in the opening 4a of the resist 4 of the glass substrate 1. 2 is formed (perforation processing: ST14).
  • a mixed acid of hydrofluoric acid (HF) and hydrochloric acid (HC1), or a mixed acid of hydrofluoric acid (HF), ammonium fluoride (HN4F), and hydrochloric acid (HC1) can be used.
  • etching process: ST15 an etching process for smoothing the inner wall surface 3 is also performed (etching process: ST15). Therefore, an etching process for the inner wall surface 3 of the through hole 2 as a separate process is unnecessary.
  • an etching process for treating the inner wall surface 3 of the formed through-hole 2 with an etching solution containing hydrofluoric acid is a separate process. The inner wall surface 3 is roughened and smoothed.
  • the through hole 2 formed in this way is buried with a conductive metal 8 to form a through electrode 9.
  • the through electrode 9 is formed by first applying a resist to the glass substrate 1 as shown in Fig. 3 (d).
  • the glass substrate 1 After 5 is applied again to coat the surface other than the surface to be treated, the glass substrate 1 is immersed in a tin chloride aqueous solution at a predetermined temperature for a predetermined time, and then washed. Then, it is immersed in a palladium chloride aqueous solution for a predetermined time.
  • This catalyst treatment step is repeated twice to apply a catalyst to the inner wall surface 3 of the through hole 2 formed in the glass substrate 1 (catalyst treatment: ST2).
  • a copper plating film 6 is formed on the inner wall surface 3 of the through hole 2 of the glass substrate 1 (first plating process: ST3).
  • a known electroless plating method can be used.
  • complexing agents such as sodium potassium tartrate tetrahydrate, reducing agents such as formaldehyde, pH adjusters such as sodium hydroxide, and chelating agents
  • the copper plating film 6 can be formed on the inner wall surface 3 of the through hole 2 of the glass substrate 1.
  • the amount of copper ions added to the copper plating solution is 0 ⁇ 041-0.0555 mol / L, and the amount of nickel ions added is 1 to 30 mol with respect to lOOmol of copper ions contained in the copper plating solution.
  • the power S is preferable. More preferably, the addition amount of the nickel ion is 4 to; Omol with respect to lOOmol of the copper ion. If the nickel ion is less than lmo 1 with respect to copper ion lOOmol, sufficient adhesion of the copper plating film 6 to the glass substrate 1 cannot be obtained. Since the physical properties of copper deteriorate, when using the copper plating film 6 as a circuit electrode, the resistance is greatly increased.
  • this copper plating solution contains about 1.5 g / L sodium hydroxide (Na OH) is included and the pH is adjusted to about 12.6, and about 0.1% of the chelating agent is included.
  • Na OH sodium hydroxide
  • an electroless tin-silver plating film 7 containing tin and silver as main components is formed on the upper layer of the copper plating film 6 (second plating). Processing: ST4).
  • a known electroless plating method can be used.
  • an electroless tin plating method in which a silver substitution plating is performed on the copper plating film 6 and then an electroless tin plating is performed thereon, so that a tin coating is formed on the upper layer of the copper plating film 6.
  • a silver substitution plating is performed on the copper plating film 6 and then an electroless tin plating is performed thereon, so that a tin coating is formed on the upper layer of the copper plating film 6.
  • the glass substrate 1 is heated for a predetermined time at a predetermined temperature, or instead of this heating process, A heating / pressurizing process is performed in which the glass substrate 1 is heated while being pressurized in an atmosphere of a predetermined pressure (heating ('pressing) process ST5).
  • heating ('pressing) process ST5 heating ('pressing) process ST5
  • the through-hole 2 is filled with molten solder that acts as a conductor (conductor filling: ST6).
  • solder filling method for example, solder printing, a method of filling a solder ball by inserting and heating and melting it, or the like can be used.
  • the inner wall surface 3 of the through hole 2 is treated with an etching solution before the first plating process, thereby removing the microcracks on the surface to be treated by etching. Therefore, the air tightness of the copper plating film 6 with respect to the inner wall surface 3 can be enhanced.
  • the substrate is heated, whereby the inner wall surface 3 of the through-hole 2 and the copper plating formed in the first plating treatment step.
  • Hydrogen present at the interface with the membrane 6 can be removed, and by heating while applying pressure, the gap between the inner wall surface 3 and the adhesive film can be reduced. Hydrogen that has entered the interface between 3 and the copper plating film 6 can be removed. Thereby, the airtightness of the copper plating film 6 with respect to the inner wall surface 3 can be further improved.
  • the through-electrode circuit board having the through-electrode 9 filled with solder as a conductor in the through-hole 2 has an airtightness between the inner wall surface 3 of the through-hole 2 and the copper plating film 6. Since the wettability between the solder and the tin-silver plating film is good, the through hole 2 is filled without any gaps, and the airtightness between the tin-copper plating film and the solder is also good. The through electrode has excellent airtightness. Further, since the solder is filled in the entire through hole without any gap, when this through electrode 9 is used as the through electrode, the reliability of the electrical connection is excellent.
  • the method for forming the through hole in the substrate may be either a dry etching method or a wet etching method.
  • the method of filling the through hole with the conductor may be any method such as solder melting filling, electroless plating, electrolytic plating, or baking after filling with a paste containing metal nanoparticles.
  • a planarization process step for polishing both surfaces of the substrate may be provided as a final step in the method for forming the through electrode circuit board. By this treatment, a flat substrate can be obtained, and when the through electrode substrate and another member are combined to form a shape that requires airtightness, it is possible to join without gaps. It depends on the power to get.
  • a glass substrate 1 made of borosilicate glass having a thickness of 25 m is prepared as the glass substrate 1, and a wavelength of 172 ⁇ m and a light amount of 20 mW / cm 2 are applied to the glass substrate 1 using xenon excimer UV. UV treatment for 2 minutes (ST1, ST [0065] Subsequently, the glass substrate 1 was washed with pure water for 1 minute by a megasonic cleaning method using ultrasonic cavities (ST1: ST12).
  • a resist 4 is applied to the glass substrate 1, and exposure and development are performed to form 25 ⁇ punched patterns in the through hole forming portions on the front and back surfaces of the substrate (ST1, ST13), and then sandblasting Through holes 2 are formed by the method (ST1, ST14). Thereafter, the inner wall surface 3 of the through hole 2 was etched to form a smooth surface (ST1, ST15).
  • a mixed acid composed of 1. Omol / L hydrofluoric acid (HF), 3. Omol / L ammonium fluoride (NH4 F), and 4. Omol / L hydrochloric acid (HC1)
  • HF Omol / L hydrofluoric acid
  • NH4 F Omol / L ammonium fluoride
  • HC1 Omol / L hydrochloric acid
  • the resist 4 for etching is removed, and a new resist (masking) 5 that exposes only the inner wall surface 3 of the through hole 2 is applied for electroless plating, and the glass substrate 1 is chlorinated.
  • a new resist (masking) 5 that exposes only the inner wall surface 3 of the through hole 2 is applied for electroless plating, and the glass substrate 1 is chlorinated.
  • a palladium chloride aqueous solution having a palladium ion concentration of 0.015% for 2 minutes was repeated twice to give a catalyst to the inner wall surface 3 of the through hole 2 formed in the glass substrate 1 (ST2).
  • the plating film In the process of forming the plating film, 0 ⁇ 047 mol / L of copper ions and 0.0028 mol / L of nickel ions are added, and sodium potassium tartrate tetrahydrate (Rochelle salt) is added as a complexing agent.
  • a copper plating solution containing about 0.2% formaldehyde and about 0.1% chelating agent was prepared. Further, the copper plating solution contains about 1.5 g / L sodium hydroxide (NaOH) as pH adjustment, and the pH is adjusted to 12.6. Then, the glass substrate 1 is immersed in the plating solution whose liquid temperature is set to 30 ° C. for 1 hour, and the copper plating film 6 is formed on the inner wall surface 3 of the through hole 2 of the glass substrate 1. Formed.
  • a tin-silver plating film 7 was further formed on the inner wall surface 3 of the through hole 2 where the copper plating film 6 was formed (ST4).
  • a two-step tin-silver plating method was used, in which a substitution silver plating process was first performed, followed by electroless tin plating.
  • Above Glass substrate 1 is immersed for 35 seconds in a silver-substituted plating solution set at a liquid temperature of 40 ° C, washed with water, and then immersed in a tin plating solution set at a liquid temperature of 68 ° C for 12 minutes.
  • a tin-silver plating film 7 was further formed on the surface of the copper plating film 6 in the through hole 2 of the glass substrate 1 to a thickness of about 1 ⁇ m.
  • the electroless plating resist is removed from the glass substrate 1, the heat treatment temperature is set to 400 ° C, and the glass substrate 1 is heated in a nitrogen atmosphere at atmospheric pressure with a heat treatment time of 1 hour. (ST5).
  • a resist 4 is applied to the glass substrate 1, an exposure image is formed, and a 25 ⁇ ⁇ extraction pattern is formed on the through hole forming portions on the front and back surfaces of the substrate. Then, the through hole 2 is formed by etching (ST1, ST14), and at the same time, the inner wall surface 3 of the through hole 2 is made a smooth surface (ST1, ST15).
  • FIG. 5 is a flowchart showing each step of the method for forming a conduction hole of the present embodiment
  • FIG. 6 is a conductor metal that is a pretreatment in the method for forming the conduction hole of the present embodiment
  • FIG. 5 is a flow chart showing each process until a through hole in which a metal is embedded is formed in a base material of an electronic component.
  • FIGS. 7A to 7H are schematic views showing each process from the stage of pretreatment of the base material to the formation of the conduction hole in the conduction hole forming method of the present embodiment.
  • FIG. 8 is an enlarged cross-sectional view of a main part of an electronic component having a conduction hole in the present embodiment.
  • the force described using a case where a through hole formed in a glass substrate as a base material is filled with copper to form a conductive hole that acts as a through electrode is described.
  • the metal filled in the through hole is not limited to copper, and various conductive metals can be used.
  • the base material of the electronic component for example, in addition to a ceramic base material, various base materials such as a resin base material made of a resin such as polyimide, epoxy, or polycarbonate can be used. Monkey.
  • a glass substrate 11 as a base material is prepared, which is filled with copper plating 17 as a conductive metal later to form through holes 12 that become conductive holes 18.
  • the glass substrate 11 is irradiated with ultraviolet rays (ultraviolet treatment: ST31) or cleaned with pure water (cleaning treatment: ST32) as part of the pretreatment (ST21) for forming the conductive holes 18. It is preferable to keep it clean. This is because the catalyst adheres to the glass substrate 11 by removing impurities such as dust, fats and oils adhering to the glass substrate 11 as a base material in advance.
  • the through hole 12 is formed in the glass substrate 11 as a part of the pretreatment (ST21) by a known drilling method such as an etching method or a sandblast method.
  • a known drilling method such as an etching method or a sandblast method.
  • a resist 14 is first applied to the glass substrate 11 shown in FIG. 13 (a) and then exposed and developed as shown in FIG. 13 (b).
  • a circular punching pattern having a desired diameter is formed on one surface side (for example, the front surface side) of the glass substrate 11 (pattern forming process: ST33).
  • etching is performed under the conditions of a predetermined temperature, etching rate, and etching time using an etching solution, and as shown in FIG.
  • the through hole 12 is formed in the opening 14a of the resist 14 of the glass substrate 11.
  • a mixed acid of hydrofluoric acid (HF) and hydrochloric acid (HC1) or a mixed acid of hydrofluoric acid (HF), ammonium fluoride (HN4F), and hydrochloric acid (HC1) is used.
  • an etching process for smoothing the inner wall surface 13 is performed simultaneously with the formation of the through hole 12 (etching). Processing: ST35). Therefore, the etching process of the inner wall surface 13 of the through hole 12 as a separate process is unnecessary. However, for example, when the through-hole 12 is formed in the glass substrate 11 by the sand blasting method, the etching process for treating the inner wall surface 13 of the formed through-hole 12 with an etching solution containing hydrofluoric acid is a separate process. It is preferable to smooth the inner wall surface 13 which has been roughened. [0081] Further, as shown in FIG.
  • the through hole 12 formed in the glass substrate 11 by an etching method or a sand blast method has a larger diameter on one side where the opening 14a of the resist 14 is formed than on the other side. It is formed in a tapered shape.
  • the through-hole 12 formed in a tapered shape is a force that makes it easy to fit a conductor C described later.
  • the through-hole 12 may be a cylindrical through-hole 12. In that case, the conductor C is fitted into the through-hole 12 using press-fitting means.
  • the through hole 12 formed in this way is buried with a conductive metal to form a conduction hole 18.
  • the conductive hole 18 is formed by first applying a resist 5 on the glass substrate 1 to cover the surface other than the surface to be processed. Is immersed in a tin chloride aqueous solution at a predetermined temperature for a predetermined time, and then washed. Then, it is immersed in a palladium chloride aqueous solution for a predetermined time. This catalyst treatment step is repeated twice to apply a catalyst to the inner wall surface 13 of the through hole 12 formed in the glass substrate 1 (catalyst treatment: ST22).
  • a copper plating film 16 is formed on the inner wall surface 13 of the through hole 12 of the glass substrate 11 (first plating process: ST23).
  • Various plating processes in the plating process can use a known electroless copper plating method.
  • complexing agents such as sodium potassium tartrate tetrahydrate, reducing agents such as formaldehyde, pH adjusting agents such as sodium hydroxide, and chelating agents
  • the copper plating film 16 can be formed on the inner wall surface 13 of the through hole 12 of the glass substrate 11.
  • the amount of copper ions added in the copper plating solution is 0 ⁇ 041-0.0555 mol / L, and the amount of nickel ions added is 1-30 mol with respect to lOOmol of copper ions contained in the copper plating solution.
  • the power S is preferable. More preferably, the addition amount of the nickel ion is 4 to; Omol with respect to lOOmol of the copper ion. If the nickel ion is less than lmo 1 with respect to copper ion lOOmol, sufficient adhesion of the copper plating film 6 to the glass substrate 1 cannot be obtained. Since the physical properties of copper deteriorate, when using the copper plating film 6 as a circuit electrode, the resistance is greatly increased.
  • this copper plating solution contains about 1.5 g / L sodium hydroxide (Na OH) is included and the pH is adjusted to about 12.6, and about 0.1% of the chelating agent is included.
  • Na OH sodium hydroxide
  • the conductor C at least the surface of which has been treated so as to be capable of electroless copper plating is inserted into the through hole 12 (conductor arrangement: ST24).
  • the size of the conductor C is a force S required to be a size that can be accommodated in the through hole 12, and the shape thereof is not particularly limited.
  • it has a spherical shape, or a spindle shape whose longitudinal section is elliptical or diamond-shaped, and the entire circumference of the equator vicinity, which is approximately the same as the diameter of the through-hole 12, is tapered.
  • the copper plating film 16 formed on the inner wall surface 13 of the through-hole 12 is provided by being fitted into the through-hole 12 so as to be brought into contact with the inner wall of the through-hole 12, and disposed thereon. Since electrical continuity can be ensured between the conductor C disposed so as to be in contact with the filled copper plating 17, the reliability of electrical connection is excellent.
  • the conductor C is press-fitted into the through hole 12.
  • the glass substrate 11 in which the conductor C is disposed in the through hole 12 is again dipped in the plating solution set at a predetermined temperature for a predetermined time, so that FIG. 7 (g) and FIG. As shown in FIG. 4, the gap formed in the through hole 12 of the glass substrate 11 is filled with copper plating 17 (second plating process: ST25). At this time, the conductor C serves as a nucleus to fill the through hole 12 with copper plating 17.
  • the glass substrate 11 is heated at a predetermined temperature for a predetermined time, or instead of this heating process. Then, a heating / caloric pressure treatment is performed in which the glass substrate 11 is heated while being pressurized in an atmosphere of a predetermined pressure (ST26), and the formation of the conduction hole 18 is completed. Thereby, the space
  • the resist stripping and heat treatment may be performed after the first plating process and before the conductor disposing process! / (See Example 2).
  • the inner wall surface 13 of the through hole 12 is treated with an etching solution, thereby etching a defective portion consisting of fine irregularities on the surface to be treated. Since it can be removed to obtain a smooth surface, the adhesion of the copper-attached film 16 to the inner wall surface 13 can be further increased.
  • the electronic component having the conduction hole 18 of the present embodiment formed in this way has high sealing performance between the inner wall surface 13 of the through hole 12 and the copper plating film 16, and the conduction hole. Since copper as the conductive metal embedded in 18 is also highly airtight, when this conductive hole 18 is used as a through electrode, the reliability of electrical connection is excellent.
  • the glass substrate 11 is made of borosilicate glass having a thickness of 25 m. Substrate 11 was prepared, and this glass substrate 11 was irradiated with ultraviolet rays having a wavelength of 172 nm and a light amount of 20 mW / cm 2 for 2 minutes using xenon excimer UV (ST21, ST31) 0
  • the glass substrate 11 was cleaned by washing with pure water for 1 minute by a megasonic cleaning method using ultrasonic cavity (ST21: ST32).
  • a resist 14 is applied to the glass substrate 11, and exposure and development are performed to form a 25 01 extraction pattern in the through hole 12 formation portion on the surface of the substrate (ST21, ST33), and then etching method
  • the through hole 12 was formed (ST21, ST34), and at the same time, the inner wall surface 13 of the through hole 12 was etched to form a smooth surface (ST21, ST35).
  • a mixed acid composed of 1. Omol / L hydrofluoric acid (HF), 3. Omol / L ammonium fluoride (NH4 F), and 4. Omol / L hydrochloric acid (HC1)
  • HF Omol / L hydrofluoric acid
  • NH4 F Omol / L ammonium fluoride
  • HC1 Omol / L hydrochloric acid
  • a copper plating film 16 was formed on the inner wall surface 13 of the through hole 12 of the glass substrate 11 (S ⁇ 23).
  • 0.047 mol / L of copper ions and 0.008 mol / L of nickel ions are added, and sodium potassium tartrate tetrahydrate (Rosiel salt) as a complexing agent.
  • a copper plating solution containing about 0.2% honolemuanolide and about 0.1% chelating agent was prepared.
  • the copper plating solution contains about 1.5 g / L sodium hydroxide (NaOH) as pH adjustment, and the pH is adjusted to 12.6.
  • the glass substrate 11 was immersed in the plating solution set at a liquid temperature of 30 ° C. for 1 hour to form a copper plating film 16 on the inner wall surface 13 of the through hole 12 of the glass substrate 11.
  • the glass substrate 11 in which the conductor C is disposed in the through hole 2 is again immersed in the plating solution whose liquid temperature is set to 30 ° C for 5 hours, so that the glass substrate 11 The gap formed in the through hole 12 was filled with a copper plating 17 (ST25).
  • the resist for electroless copper plating is removed from the glass substrate 11, and the heat treatment temperature is set to 40.
  • the glass substrate 11 was heated in a nitrogen atmosphere at 0 ° C. and at atmospheric pressure with a heat treatment time of 1 hour (ST26). As a result, the through hole 12 of the glass substrate 11 was filled with copper as the conductive metal to complete the conductive hole 18.
  • Example 4 after forming the copper plating film 16 on the inner wall surface 13 of the through hole 12 of the glass substrate 11, the electroless copper plating resist 15 is removed from the glass substrate 11.
  • the conductor C having a spherical shape with a diameter of about 25 was inserted into the through hole 12.
  • the heat treatment temperature was set to 400 ° C., and the glass substrate 11 was heated in a nitrogen atmosphere with the heat treatment time of 1 hour at atmospheric pressure to improve the adhesion between the glass substrate 11 and copper. .
  • the glass substrate 11 was subjected to electrolytic copper plating for 10 minutes, and the void formed in the through hole 12 of the glass substrate 11 was filled with the copper plating 17 to complete the conduction hole 18.

Abstract

L'invention concerne la fourniture d'un substrat de circuit à électrode traversante dans lequel l'étanchéité à l'air entre le substrat et un film de plaquage en cuivre servant de conducteur est améliorée ainsi qu'un procédé de formation du substrat. Le substrat de circuit à électrode traversante comporte une électrode traversante (9) dotée d'un conducteur métallique (8) remplissant un trou traversant (2). Le trou traversant (2) présente une surface de paroi intérieure soumise à un processus de lissage par gravure et possédant un film plaqué de cuivre autocatalytique (6).
PCT/JP2007/071377 2006-11-02 2007-11-02 Substrat de circuit à électrode traversante, procédé de formation d'un substrat de circuit à électrode traversante, procédé de formation de trou d'introduction, et pièce électronique à trou d'introduction WO2008053987A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006299253A JP2010021164A (ja) 2006-11-02 2006-11-02 導通孔の形成方法および導通孔を有する電子部品
JP2006-299253 2006-11-02
JP2006-299252 2006-11-02
JP2006299252A JP2010021163A (ja) 2006-11-02 2006-11-02 貫通電極回路基板およびその形成方法

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WO2008053987A1 true WO2008053987A1 (fr) 2008-05-08

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000265280A (ja) * 1999-03-16 2000-09-26 Ishihara Chem Co Ltd 無電解スズ−銀合金メッキ浴及び当該メッキ浴でスズ−銀合金皮膜を施したｔａｂのフィルムキャリア等
JP2002245610A (ja) * 2001-02-09 2002-08-30 Trace Storage Technol Corp 改善された上書き特徴及びｓｎｒ特徴を有する磁気記録媒体
WO2003007370A1 (fr) * 2001-07-12 2003-01-23 Hitachi, Ltd. Substrat de cablage en verre et procede de fabrication associe, pate conductrice et module de semi-conducteurs utilises pour ce substrat de cablage en verre, ainsi que procede de formation d'un substrat de cablage et d'un conducteur
JP2003218525A (ja) * 2002-01-18 2003-07-31 Fujitsu Ltd 回路基板及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000265280A (ja) * 1999-03-16 2000-09-26 Ishihara Chem Co Ltd 無電解スズ−銀合金メッキ浴及び当該メッキ浴でスズ−銀合金皮膜を施したｔａｂのフィルムキャリア等
JP2002245610A (ja) * 2001-02-09 2002-08-30 Trace Storage Technol Corp 改善された上書き特徴及びｓｎｒ特徴を有する磁気記録媒体
WO2003007370A1 (fr) * 2001-07-12 2003-01-23 Hitachi, Ltd. Substrat de cablage en verre et procede de fabrication associe, pate conductrice et module de semi-conducteurs utilises pour ce substrat de cablage en verre, ainsi que procede de formation d'un substrat de cablage et d'un conducteur
JP2003218525A (ja) * 2002-01-18 2003-07-31 Fujitsu Ltd 回路基板及びその製造方法

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