WO2008044333A1 - Procédé de production de particules de diamant ayant des faces de coupe colorées, et procédé de production de particules de diamant ayant des faces de coupe à motifs - Google Patents

Procédé de production de particules de diamant ayant des faces de coupe colorées, et procédé de production de particules de diamant ayant des faces de coupe à motifs Download PDF

Info

Publication number
WO2008044333A1
WO2008044333A1 PCT/JP2007/001085 JP2007001085W WO2008044333A1 WO 2008044333 A1 WO2008044333 A1 WO 2008044333A1 JP 2007001085 W JP2007001085 W JP 2007001085W WO 2008044333 A1 WO2008044333 A1 WO 2008044333A1
Authority
WO
WIPO (PCT)
Prior art keywords
diamond particles
ion
ions
cut surface
colored
Prior art date
Application number
PCT/JP2007/001085
Other languages
English (en)
Japanese (ja)
Inventor
Shohei Taniguchi
Yukinori Saito
Original Assignee
Tokyo Metropolitan Industrial Technology Research Institute
University Of Yamanashi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Metropolitan Industrial Technology Research Institute, University Of Yamanashi filed Critical Tokyo Metropolitan Industrial Technology Research Institute
Publication of WO2008044333A1 publication Critical patent/WO2008044333A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation

Definitions

  • the present invention relates to a method for producing diamond particles having a cut surface and a method for producing diamond particles having a pattern drawn on a cut surface. More specifically, high-energy ions are implanted into the cut surface of the diamond particles to produce diamond particles with colored cut surfaces, and patterns such as letters or marks are drawn on the diamond particle cut surface.
  • the present invention relates to a method for producing diamond particles.
  • Diamond particles are transparent, colorless, and large in value. However, most diamond particles have low transparency, and small ones are selected for industrial use. Therefore, a method of coloring diamond particles with low transparency and low commercial value for jewelry has been proposed and put into practical use. Conventionally, diamond particles can be colored by (1) high-pressure and high-temperature treatment (HPHT) method, (2) electron beam irradiation method, (3) neutron irradiation method,
  • HPHT high-pressure and high-temperature treatment
  • electron beam irradiation method electron beam irradiation method
  • neutron irradiation method neutron irradiation method
  • the neutron irradiation method of (3) above includes a method of irradiating a child cut surface of a diamond grain with a nuclear reactor or the like (see Patent Document 8), and then several hundreds.
  • a method of heat treatment with C has been proposed. These proposed methods require a large-scale facility such as a nuclear reactor and may activate impurities in the diamond particles, resulting in a risk of residual radioactivity when using jewelry. Since neutrons with high energy have high penetrating power, even if a mask is applied to the cut surface of diamond particles, the mask cannot prevent neutron transmission. It is impossible to draw characters or marks on the surface.
  • the radium treatment method of (4) above is a method of irradiating the diamond particle cut surface with a strand emitted from radium.
  • radioactive material that is the daughter nuclide of the radium adheres to the cut surface of the diamond particles.
  • it is not a beam-like string irradiation it is difficult to draw a pattern such as a letter or mark on only a part of the diamond particle cut surface.
  • Patent Document 11 As a low energy ion implantation method of the above (5), the method described in Patent Document 11 has been proposed. However, there is a step of performing a heat treatment at 500 ° C or higher after low energy ion implantation. Necessary (see Patent Document 1 2). In this method, since the ion energy is as low as 50 to 1 OO keV, the surface modification is only in a shallow region from the cut surface to the order of several tens of nanometers. Ions are diffusing. Also, the ion implantation amount requires 5 X 10 15 to 5 X 10 ' 8 ion cm 2 and a large amount of implantation. In addition, as described in the examples The coloring method describes only one black color, and does not describe coloring with other colors. Furthermore, characters such as letters and marks drawn by heat treatment may diffuse and become blurred.
  • the method described in Patent Document 13 is a method of etching with a focused ion beam.
  • the method described in Patent Document 14 is a method of performing plasma etching after masking.
  • laser processing methods are known, and diamond particle identification, identification, warranty, etc. numbers and symbols are engraved, and each certificate is engraved with the diamond particles. Are used to prove that they are the same, and to prove that they are artificial diamonds.
  • these techniques are processing by cutting the diamond surface, so color drawing is impossible.
  • Patent Document 1 Japanese Translation of Special Publication 2004-505765
  • Patent Document 2 Japanese Translation of Special Publication 2003-528023
  • Patent Document 3 Japanese Patent Application Laid-Open No. 1-131014
  • Patent Document 4 Japanese Patent Laid-Open No. 1-1381 1 2
  • Patent Document 5 Japanese Unexamined Patent Publication No. 1-183409
  • Patent Document 6 JP-A-6-26341-8
  • Patent Document 7 Japanese Patent Publication No. 5_36399
  • Patent Document 8 Japanese Patent Publication No.57-401-20
  • Patent Document 9 Japanese Patent Laid-Open No. 63-1 62600
  • Patent Document 10 JP-A-6_21 9895
  • Patent Document 11 JP-A-2005-247686
  • Patent Document 12 JP-A-2005-247686
  • Patent Document 13 Japanese Patent Laid-Open No. 6_36594
  • Patent Document 14 Japanese Patent Application Laid-Open No. 2002_226290
  • the object of the present invention is as follows.
  • the cut surface of the diamond particles to be colored has a temperature range from room temperature to about 200 ° C. , 1 0 3 to 1 0- 4 vacuum atmosphere of P a, the ion accelerator, range acceleration energy of 1 to 5 m e V, irradiation injection amount of 1 X 1 0 12 ⁇ 1 X 1 0 15 ions of an ion
  • a method for producing diamond particles colored on the cut surface characterized by irradiating high-energy energy ions in the range of / cm 2 .
  • the diamond particle cut surface is processed into a shape such as a character or a mark and a hole or a mask is perforated.
  • a method for producing particles is provided.
  • the manufacturing method according to the present invention is performed at a high temperature of several thousand degrees like the conventional HPHT method. Since it can be carried out in the temperature range from room temperature to about 200 ° C without requiring heat or high pressure, it can be applied even after setting diamond particles on a noble metal ring.
  • the conventional electron beam irradiation method needs to shield secondary X-rays generated during electron beam irradiation, which requires a large facility, but according to the manufacturing method according to the present invention, the ion accelerator to be used is Since secondary X-rays are rarely generated, no shielding facilities are required, so the facility does not become large.
  • the conventional electron beam irradiation method requires a heat treatment step for several hours at a temperature of about 100 ° C. after irradiation, but according to the manufacturing method according to the present invention, after ion irradiation to diamond particles, No heat treatment or annealing is required, and colored diamond particles can be produced in a few minutes to an hour, greatly improving productivity.
  • the conventional neutron irradiation treatment method requires a large-scale facility such as a nuclear reactor and a large accelerator, and impurities in the diamond may be activated after irradiation.
  • impurities in the diamond may be activated after irradiation.
  • the amount of ion energy to irradiate is not enough to activate impurities, so there is no risk of diamond particles being activated.
  • the conventional low energy ion implantation method requires a large amount of ion implantation, but according to the manufacturing method of the present invention, the amount of ion irradiation (implantation) can be achieved by the conventional low energy ion implantation method.
  • the amount can be reduced to less than 1 / 100th of the amount.
  • the production method of the present invention it is possible to produce a variety of colored products because the color type and color density can be adjusted by adjusting the type and irradiation time of the ion source.
  • patterns such as numbers and letters can be easily drawn on the cut surface of diamond particles, so that it is possible to draw an identification number, manufacturer logo, and manufacturer mark on diamond particles. And by these drawing Because it can be easily distinguished from fake brands, customer confidence in diamond particles can be increased.
  • FIG. 1 is a schematic diagram of an ion accelerator.
  • FIG. 2 is a schematic side view showing an example in which diamond particles are fixed to a fixture and irradiated with ions.
  • FIG. 3 is a schematic side view showing an example of producing diamond particles having a pattern colored on the cut surface.
  • FIG. 4 is a schematic side view showing another example when producing diamond particles having a pattern colored on the cut surface.
  • FIG. 5 is a plan view of an example of diamond particles with a picture drawn on the cut surface.
  • FIG. 6 is a schematic side view of an example of diamond particles with characters drawn on the cut surface.
  • FIG. 7 is an enlarged view of characters formed on the girdle part.
  • the diamond particles refer to particles obtained by processing natural diamond ore into particles and cutting out the surfaces of the cut particles.
  • the type of diamond is not particularly limited, and may be any of Ia type, Ib type, IIa type, and IIb type.
  • There are no particular restrictions on the shape of the diamond particle cutlet and conventionally known cutlet shapes such as Muskie's cut, baguette cut, oval cut, French cut, pair sharp cut, briolette cut Table cut, rose cut, force position force, step cut, brilliant full cut, eight cut, scissor cut, emerald cut, etc.
  • the size of the diamond particles is not particularly limited as long as it can be fixed to the fixing base when irradiating with ions. If diamond particles are small, the drawing pattern should be reduced accordingly.
  • the cut surfaces of the diamond particles are colored and / or patterns such as letters and marks.
  • coloring means coloring the cut surface of the diamond particles, and in the present invention, the pattern is an identification number, manufacturer mark (symbol), manufacturer logo (continuous characters), and other small letters. Means patterns, symbols, etc.
  • the cut surface to be colored or patterned may be any surface such as a table, star facet, bezel facet, upper girdle facet, lower girdle facet, pavilion facet set, girdle.
  • the force surface on which coloring or a pattern is applied may be one surface or a plurality of surfaces including two or more surfaces.
  • the diamond particles are held by a holder, and the ion accelerator It is installed at a predetermined position in the ion irradiation chamber, and the cut surface is irradiated with ions accelerated by the ion accelerator.
  • the holder is preferably made of a material that does not deform such as softening, melting, and vaporization under the conditions for irradiating ions to the cut surface of the diamond particles and that has a heat resistance of 200 ° C. or higher. Specific examples include stainless steel, platinum, titanium, titanium alloys, magnesium alloys, aluminum, and aluminum alloys.
  • the diamond particles may be set on a noble metal base such as a ring.
  • a commercial ion irradiation (implantation) device can be used.
  • Commercial ion accelerators include a cesium sputter ion source and a cockcroft ⁇ Walton ion accelerator (see Fig. 1 below) using a tandem accelerator tube. These ion accelerators place a powdery raw material on an ion source to generate target ions. Impurity ions derived from impurities contained in the raw materials are controlled by a mass separation electromagnet. The impurity ions are separated by bending and mass. Select the target ion because the lighter than the target ion bends more than 90 degrees and the heavier ion than the target ion turns less than 90 degrees by the magnetic force set in the mass separation electromagnet. Can be separated.
  • the ion irradiation dose is selected in the range of 1 X 10 12 to 1 X 10 15 ions / cm 2 . If the ion irradiation dose is less than 1 X 10 12 ions / cm 2 , the ion irradiation dose is insufficient, the diamond particle cut surface is insufficiently colored, and the ion irradiation dose is 1 X 1 0 15 Exceeding ioncm 2 is not preferable because the ratio of the diamond crystal becoming graphite or amorphous increases and becomes black only, making it difficult to color various colors.
  • the degree of vacuum 1 0 - shall choose 4 in the range of P a - 3 ⁇ 1 0.
  • the degree of vacuum is 1 0 - is less than 3 P a, the force to fly the ions is weak, not only can not accelerate I O emissions is low vacuum, because there is a risk of discharge because a high voltage is loaded It is.
  • coloration degree of vacuum 1 0 - exceeds 4 P a, etc. is required baking irradiation chamber (operation for increasing the degree of vacuum by heating), it takes time to sample change is undesirable.
  • Examples of the types of ions that can be irradiated include ions such as gold (A u), silicon (S i), carbon (C), and boron (B).
  • the concentration of the color imparted to the cut surface of the diamond particles can be easily changed by changing the intensity of the ion acceleration energy, the amount of ion irradiation, and the like.
  • Au ions are light brown to brown to black
  • Si ions are dark green to light green
  • C ions are green to light green
  • B ions are yellow green to light yellow green (in the examples described later). (See Table 1).
  • the irradiated cut surface is colored by irradiating the cut surface of the diamond particle with ions, but since the cut diamond particle has a plurality of cut surfaces, it is complicated. Reflected and shining, diamond particles have a commercial value as jewelry.
  • the cut surface of the diamond particle is coated with a mask or a photoresist in which holes are perforated in a shape such as letters or marks (FIG. 3, FIG.
  • the diamond particles are held by the holder and held in the ion irradiation chamber of the ion accelerator, and the ions accelerated by the ion accelerator are extracted from the drilled holes. Irradiate the cut surface.
  • the cut surface is patterned according to the pattern of the hole drilled in the mask or photoresist (see Fig. 5 and Fig. 6 below).
  • the material that can be used as a mask is made of a material that does not deform, such as softening, melting, and vaporization, under the conditions when ions are irradiated onto the diamond particle cut surface, and that has a heat resistance of 200 ° C or higher. Is preferred. Specific examples include aluminum, stainless steel, silicon, magnesium, titanium, and platinum. If the mask is too thin, the ion transmission cannot be blocked. Therefore, the mask should be thick enough to block the ion transmission. Although it depends on the material, a thickness of several tens of micrometers or more is preferable.
  • a shape such as letters or marks on the mask, as a method of drilling holes, laser processing method, ion beam processing method, electron beam processing method, cutting processing method, electrolytic processing method, electric discharge processing method, etching Law.
  • the hole drilling method should be selected according to the mask material and the pattern size to be formed. Any photoresist can be used as long as it can withstand the temperature during ion irradiation and can adhere to the diamond particle surface. Photoresist materials having such properties differ depending on the light source used for exposure of the photoresist. When the exposure light source is ultraviolet, an ultraviolet resist containing cyclized rubber and bisazide, an ultraviolet resist containing a diazoquinone compound, and the like can be mentioned.
  • the exposure light source is X-ray, X-ray resist containing PMMA, X-ray resist containing FBM, etc. .
  • the resist is coated on the diamond particles, holes are drilled through the exposure and development processes, and ions are formed from these holes. Irradiate (inject) and draw the desired pattern on the diamond particle surface.
  • the ion generation source (apparatus) that can be used in carrying out the second invention according to the present invention may be the same type as that used in the first invention, and the type of ion, ion irradiation intensity, and ion irradiation
  • the degree of vacuum and the like may also be the same as described in the first invention. Patterns such as letters or marks colored in a desired color on the cut surface can be drawn on the cut surface by means of ions passing through holes formed in the mask or the photoresist.
  • FIG. 1 is a schematic view of an example of an ion accelerator used in the manufacturing method according to the present invention.
  • the ion accelerator 1 includes a cesium sputter ion source 2, an extraction electrode 3, a mass separation electrode 4, a tandem acceleration tube 5, an energy separation electromagnet 6, a scanning electrode 7, a neutral ion separation electrode 8, an irradiation chamber 9 It is composed of diamond particle fixtures 10.
  • the ions generated from the cesium sputter ion source 2 are negative ions, and the ion source is a powder of the above-exemplified substance having an average particle size of several tens to several hundreds. A micrometer one is used.
  • the arrow indicates the direction of ion transport (travel, transport).
  • Negative ions are introduced to the mass separation electrode 4 by the extraction electrode 3 with an acceleration energy of about 20 keV. Impurity ions contained in the introduced negative ions are separated here, and only the target ions are separated and transferred to the tandem accelerator tube 5.
  • the central part of the tandem accelerator tube 5 is a positive electrode, and the negative ion is accelerated to the central part.
  • the voltage that can be applied at the center is in the range of 100 kV to 1.7 MV.
  • the ions converted into positive ions at the center of the tandem accelerator tube 5 are further accelerated and transferred toward the end of the tandem accelerator tube 5.
  • a positive ion may have multiple ions with different valences. Since the acceleration energy is different, it is separated into single acceleration energy by the energy separating electromagnet 6, scanned to form a uniform beam by the scanning electrode 7, and irradiated to the cutting surface of the diamond particles installed in the irradiation chamber 9. Is done.
  • FIG. 2 is a schematic side view showing an example of a state in which diamond particles are fixed to a fixture and irradiated with ions based on the first invention.
  • the brilliant-cut diamond particle 12 is fixed to the opening of the diamond particle fixture 11 with only the table surface exposed to the ion irradiation port.
  • the high-tech energy ions 13 are irradiated to the table surface from the opening of the diamond particle fixture 11 and only the table surface is colored.
  • FIG. 3 is a schematic side view showing an example of manufacturing diamond particles having a pattern colored on the cut surface based on the second invention
  • FIG. 4 is a cut based on the second invention
  • FIG. 5 is a schematic side view showing another example of producing diamond particles having a colored pattern on the surface
  • FIG. 5 is a plan view of an example of diamond particles with a picture drawn on the cut surface
  • Fig. 5 is a schematic side view of an example of diamond particles in which characters are drawn on a cut surface.
  • FIG. 3 14 is diamond particles, 15 is a mask for shielding high energy ions, and 16 is high-engineered energy ions.
  • 17 is diamond particles, 18 is a photoresist layer that shields high-energy ions, and 19 is high-energy ions.
  • 5 is a heart-shaped pattern formed on the table surface 20.
  • FIG. 6 is a character formed on the girdle part 21.
  • FIG. 7 is an enlarged view of the character part of FIG.
  • the present invention will be described in detail based on examples, but the present invention is not limited to the following description examples unless it exceeds the gist.
  • the xy chromaticity of the sample after ion irradiation was measured as follows.
  • X y chromaticity measurement method Diamond particles, “JIS 7 8 16 (1 9 9 1), regular light source fluorescent lamp D 6 5 _ used for comparison of surface color _ format and performance”
  • a D 65 standard light source and a color luminance meter (Koni force Minolta Co., Ltd., model: CS-220) are prepared, and white light from the standard light source is applied to the colored cut surface of the diamond particles created in the following example. The reflected light was measured with a color luminance meter. The same sample was measured 3 times and the average value was calculated.
  • Example 1 the sample put in the ion source is changed to a powder of silicon (S i) (average particle size: about 650 micrometers), and the acceleration energy is constant at 3 MeV.
  • Table 1-1 The results are shown in Table 1-1. In the obtained sample, those with a small amount of ion irradiation exhibited a light green color, and those with a large amount of ion irradiation exhibited a dark green color.
  • Example 1 the sample placed in the ion source is changed to carbon (C) powder (average particle size: 700 micrometers), the acceleration energy is constant at 3 MeV, and the ion irradiation dose is , 1 X 10 13 to 5 X 10 14 ions / cm 2 , ion irradiation with diamond particle temperature of 200 ° C and vacuum of 10- 4 Pa, ion irradiation dose
  • C carbon
  • Table 1 It was described in 1. In the obtained sample, those with a small amount of ion irradiation exhibited a light green color, and those with a large amount of ion irradiation exhibited a dark green color.
  • Example 1 the sample put into the ion source was changed to a powder of boron (B) (average particle size: 1650 micrometers), and the acceleration energy was set to be constant 3 MeV.
  • the amount of irradiation was irradiated in the range of 1 X 1 0 13 ⁇ 5 X 1 0 14 ions / cm 2, the temperature of the diamond particles 2 0 0 ° C, a vacuum degree of 1 0 - set to 4 P a ion irradiation
  • Table 1-1 As for the obtained sample, those with a small amount of ion irradiation exhibited a light yellowish green color, and those with a large amount of ion irradiation exhibited a yellowish green color.
  • colored diamond particles with low commercial value can be colored to produce colored diamond particles with high commercial value as jewelry, and arbitrary patterns can be drawn on the cut surface of diamond particles.
  • patterns such as numbers and letters can be easily drawn on the cut surface of the diamond particle, so that the identification number, the manufacturer's logo, and the manufacturer's mark can be drawn on the diamond particle. It is possible and can be easily distinguished from fake brands by these drawings, which can increase customer confidence in diamond particles.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

La présente invention concerne un procédé de production de particules de diamant ayant des faces de coupe colorées, et un procédé de production de particules de diamant ayant des faces de coupe à motifs. La première invention est caractérisée par l'irradiation de la face de coupe à colorer d'une particule de diamant avec des ions d'énergie élevée par un accélérateur d'ions à l'intérieur d'une plage de températures allant de la température ambiante à 200 °C, en atmosphère sous vide de 10-3 à 10-4 Pa, avec une énergie d'accélération de 1 à 5 MeV, et avec une quantité d'ions irradiés de 1x1012 à 1x1015 ions/cm2. La seconde invention est caractérisée par le recouvrement d'une face de coupe par un masque percé avec un trou travaillé en forme d'une marque ou d'un caractère ou un masque par photorésistance, et ensuite une irradiation avec des ions d'énergie élevée de manière similaire à celle de la première invention.
PCT/JP2007/001085 2006-10-05 2007-10-04 Procédé de production de particules de diamant ayant des faces de coupe colorées, et procédé de production de particules de diamant ayant des faces de coupe à motifs WO2008044333A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006274408A JP5177472B2 (ja) 2006-10-05 2006-10-05 カット面を着色したダイヤモンド粒子の製造方法、およびカット面に文様を描画したダイヤモンド粒子の製造方法
JP2006-274408 2006-10-05

Publications (1)

Publication Number Publication Date
WO2008044333A1 true WO2008044333A1 (fr) 2008-04-17

Family

ID=39282545

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/001085 WO2008044333A1 (fr) 2006-10-05 2007-10-04 Procédé de production de particules de diamant ayant des faces de coupe colorées, et procédé de production de particules de diamant ayant des faces de coupe à motifs

Country Status (2)

Country Link
JP (1) JP5177472B2 (fr)
WO (1) WO2008044333A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5999668B2 (ja) * 2013-02-12 2016-09-28 アップル インコーポレイテッド マルチステップのイオンインプランテーション及びイオンインプランテーションシステム
US10280504B2 (en) 2015-09-25 2019-05-07 Apple Inc. Ion-implanted, anti-reflective layer formed within sapphire material

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0848597A (ja) * 1994-08-09 1996-02-20 Sumitomo Electric Ind Ltd マーク付きダイヤモンドおよびその形成方法
JP2005247686A (ja) * 2004-03-04 2005-09-15 Korea Atom Energ Res Inst イオン注入と熱処理による発色したダイアモンドの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0848597A (ja) * 1994-08-09 1996-02-20 Sumitomo Electric Ind Ltd マーク付きダイヤモンドおよびその形成方法
JP2005247686A (ja) * 2004-03-04 2005-09-15 Korea Atom Energ Res Inst イオン注入と熱処理による発色したダイアモンドの製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
HICKEY D.P. ET AL.: "Cross-sectional transmission electron microscopy method and studies of implant damage in single crystal diamond", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A, vol. 24, no. 4, July 2006 (2006-07-01), pages 1302 - 1307, XP012091074 *
VOGEL T. ET AL.: "Highly effective p-type doping of diamond by MeV-ion implantation of boron", DIAMOND & RELATED MATERIALS, vol. 13, 2004, pages 1822 - 1825, XP004544814 *

Also Published As

Publication number Publication date
JP5177472B2 (ja) 2013-04-03
JP2008094634A (ja) 2008-04-24

Similar Documents

Publication Publication Date Title
JP5463352B2 (ja) 発色調節されたサファイアの製造方法
JP4413157B2 (ja) イオン注入と熱処理による発色したダイアモンドの製造方法
JP5999668B2 (ja) マルチステップのイオンインプランテーション及びイオンインプランテーションシステム
Kanasaki et al. The precise energy spectra measurement of laser-accelerated MeV/n-class high-Z ions and protons using CR-39 detectors
US5084909A (en) Method of processing gemstones to enhance their color
WO2008044333A1 (fr) Procédé de production de particules de diamant ayant des faces de coupe colorées, et procédé de production de particules de diamant ayant des faces de coupe à motifs
JP2020188015A (ja) 被処理物体の表面上にイオンを注入する方法及びこの方法を実施する設備
Swann et al. PIXE spectrometry in archaeometry: the development of a system with high spatial resolution
Tippawan et al. Investigation on modification of ion implanted natural corundum by UV–Vis-NIR spectroscopy
EP0259961A2 (fr) Dosimétrie à faisceau d'ions
Intarasiri et al. Gemological modification of local natural gemstones by ion beams
Intarasiri et al. Development of vertical compact ion implanter for gemstones applications
KR20040023447A (ko) 이온주입과 열처리 공정을 이용한 보석발색방법
Ryuto et al. Heavy-ion beam irradiation system for biological samples in RIKEN
US20220325404A1 (en) Method for colouring a metal and coloured metal
KR100940357B1 (ko) 이온 발생 장치를 포함한 컬러 보석 제조 장치 및 컬러 보석 제조 방법
SU597417A1 (ru) Способ разделени минералов по оптическим свойствам
KR101010929B1 (ko) 전자빔을 이용한 옐로우 사파이어의 제조방법
Boonruang et al. Synchrotron radiation study on Thai reddish glass
JP4139894B2 (ja) 結晶体の作製方法、パターン形成方法
JP5004097B2 (ja) 結晶欠陥の回復方法、結晶体の作製方法、パターン形成方法、ｘ線量の検出体
KR101116178B1 (ko) 이온빔을 이용한 박판 성형가공용 그리드 형성방법
RU2211760C2 (ru) Устройство для обработки алмазов
Szydlowski et al. Calibration and application of Solid-State Nuclear Track Detectors in spectroscopy of heavier ions of energy in a few MeV/amu range
JP2005219944A (ja) 複数のコアを有する光ファイバーの製造方法及びその製造に用い得る柱状ガラス体の製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07827864

Country of ref document: EP

Kind code of ref document: A1

DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07827864

Country of ref document: EP

Kind code of ref document: A1

DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)