WO2008044326A1 - composition de photorésine positive et négative du type à amplification chimique pour gravure à sec à basse température, et procédé pour la formation d'un motif en photorésine l'utilisant - Google Patents

composition de photorésine positive et négative du type à amplification chimique pour gravure à sec à basse température, et procédé pour la formation d'un motif en photorésine l'utilisant Download PDF

Info

Publication number
WO2008044326A1
WO2008044326A1 PCT/JP2007/000974 JP2007000974W WO2008044326A1 WO 2008044326 A1 WO2008044326 A1 WO 2008044326A1 JP 2007000974 W JP2007000974 W JP 2007000974W WO 2008044326 A1 WO2008044326 A1 WO 2008044326A1
Authority
WO
WIPO (PCT)
Prior art keywords
resin
dry etching
photoresist composition
acid
group
Prior art date
Application number
PCT/JP2007/000974
Other languages
English (en)
Japanese (ja)
Inventor
Koichi Misumi
Koji Saito
Original Assignee
Tokyo Ohka Kogyo Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2006278798A external-priority patent/JP2008096717A/ja
Priority claimed from JP2006291368A external-priority patent/JP2008107635A/ja
Application filed by Tokyo Ohka Kogyo Co., Ltd. filed Critical Tokyo Ohka Kogyo Co., Ltd.
Publication of WO2008044326A1 publication Critical patent/WO2008044326A1/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition

Definitions

  • Micro electro-mechanical system (MEM) elements Micro machines incorporating MEMS elements, and through electrodes for high-density mounting
  • MEM micro electro-mechanical system
  • the formation of a silicon substrate requires a silicon substrate that has been processed with a high aspect ratio (hole depth / diameter of opening), and the silicon substrate is processed by lithography using a photoresist composition. The law is used.
  • the following properties are required for the photoresist composition. (1) Do not generate cracks due to thermal shock even when exposed to a low temperature of 0 ° C or less (has crack resistance), (2) Depth of 5 Om or more into the silicon substrate It is possible to form a thick film of 5 m or more because of the high etching process. (3) It is highly sensitive to prevent insufficiency of sensitivity because it is a thick film resist, (4) General It must be easily removable with a solvent.
  • Patent Document 1 a positive photosensitive resin composition having a quinonediazide group-containing compound used for bump formation or wiring formation is disclosed.
  • Patent Document 1 Japanese Patent Laid-Open No. 2 00 2 _ 2 5 8 4 7 9
  • Patent Document 5 Japanese Patent Laid-Open No. 2 0 0 4 _ 3 0 9 7 7 7
  • Patent Document 6 Japanese Patent Laid-Open No. 2 0 0 4 _ 3 0 9 7 7 8
  • Patent Document 7 Japanese Patent Laid-Open No. 2 0 0 3 _ 0 4 3 6 8 8
  • the present invention provides at least one selected from the group consisting of a nopolac resin, a polyhydroxystyrene resin, and an acryl resin whose solubility in an alkali is increased by the action of an acid as the component (B).
  • a chemically amplified positive photoresist composition for low-temperature dry etching characterized in that it is at least one mixed resin selected from force-resoluble nopolac resins, polyhydroxystyrene resins, and acrylic resins.
  • the chemically amplified negative photoresist composition for low-temperature dry etching includes (A) a photoacid generator, (B) a nopolac resin, At least one resin component selected from a hydroxystyrene resin and an acrylic resin, (c) at least one plasticizer of acryl resin and polyvinyl resin, (D) a crosslinking agent, and (E) an organic solvent, There are also chemically amplified negative photoresist compositions for low temperature dry etching that are characterized by inclusion.
  • the present invention provides a low-temperature dry-etching chemically amplified negative photoresist composition described above on a substrate to form a photoresist film having a thickness of 5 to 200 m, and a predetermined photoresist film is formed on the obtained photoresist film.
  • a photoresist pattern forming method is also provided, which is characterized by irradiating through a mask pattern and developing.
  • a chemically amplified negative photoresist composition for low-temperature dry etching that satisfies the following requirements: (3) high sensitivity; (4) easy removal with common solvents; and A method for forming a photoresist pattern using a chemically amplified photoresist composition for low temperature dry etching is also provided.
  • R 1 a , R 2 and R 3a are independently halogenated alkyl groups.
  • the second embodiment of the photoacid generator is as follows. , Hiichi (Benzenesulfonyloxymino) 1, 6-Dichlorodiphenylacetonitrile, Hiichi (2-Chlorodiphenylsulfonyloxymino) _4-Methoxyphenylacetonitrile, Hiichi (Ethylsulfonylo) Xyimino) — 1-cyclopente diacetonitrile, and compounds represented by the following general formula (a 2) containing an oxime sulfonate group.
  • the aromatic compound group refers to a group of a compound exhibiting physical and chemical properties peculiar to an aromatic compound, such as a phenyl group or a naphthyl group.
  • aromatic hydrocarbon groups such as, and heterocyclic groups such as a furyl group and a chenyl group.
  • R 5a is particularly preferably an alkyl group having 1 to 6 carbon atoms, and examples thereof include a methyl group, an ethyl group, a propyl group, and a butyl group.
  • Particularly preferred are compounds wherein R 4a is an aromatic compound group and R 5a is a lower alkyl group.
  • R 5 a is a methyl group, specifically, bis (methylsulfonyloxyimino) _ 1 _phenylacetonitrile, (Methylsulfonyloxyimino) -1- (p_methylphenyl) acetonitrile, 01— (Methylsulfonyloxyimino) _ 1 _ (p-methoxyphenyl) acetonitrile, [2_ (Propylsulfonyloxyimino) 2,3-dihydroxythiophene-3-ylidene] (o_tolyl) acetonitrile.
  • n 2
  • the acid generator represented by the general formula is specifically an acid generator represented by the following chemical formula.
  • an onium salt having a naphthalene ring in the cation part can be used.
  • This “having a naphthalene ring” means having a structure derived from naphthalene, and means that the structure of at least two rings and their aromaticity are maintained.
  • the naphthalene ring may have a substituent such as a linear or branched alkyl group having 1 to 6 carbon atoms, a hydroxyl group, or a linear or branched alkoxy group having 1 to 6 carbon atoms.
  • the structure derived from the naphthalene ring may be a monovalent group (one free valence) or a divalent group (two free valences) or more. Desirable (however, the free valence shall be counted excluding the portion bonded to the above substituent).
  • the number of naphthalene rings is preferably 1 to 3.
  • R 9 R 1 . a is independently a hydroxyl group, a linear or branched alkoxy group having 1 to 6 carbon atoms, or a linear or branched alkyl group having 1 to 6 carbon atoms, and R 11 a is a single group.
  • R 1 . When there are a plurality of a, they may be the same or different from each other. In addition, when there are a plurality of R 9a s , they may be the same as or different from each other.
  • the number of groups represented by the general formula (a 4) is preferably one from the viewpoint of the stability of the compound, and the rest is the number of carbon atoms 1 to 6 linear or branched alkyl groups and a phenyl group which may have a substituent, and these ends may be bonded to form a ring.
  • the two alkylene groups constitute a 3- to 9-membered ring including a sulfur atom.
  • the number of atoms (including sulfur atoms) constituting the ring is preferably 5-6.
  • Examples of the substituent that the alkylene group may have include an oxygen atom (in this case, a force group is formed together with the carbon atom constituting the alkylene group), a hydroxyl group, and the like.
  • Examples of the substituent that the phenyl group may have include a hydroxyl group, a linear or branched alkoxy group having 1 to 6 carbon atoms, or a linear or branched chain group having 1 to 6 carbon atoms. An alkyl group etc. are mentioned.
  • Suitable examples of these cation moieties include the following chemical formula (a5),
  • Examples thereof include (a 6), and the structure represented by the chemical formula (a 6) is particularly preferable.
  • the anion part of such a photoacid generator is a fluoroalkyl sulfonate ion or aryl sulfonate ion in which part or all of the hydrogen atoms are fluorinated.
  • the alkyl group in the fluoroalkylsulfonate ion may be linear, branched or cyclic having 1 to 20 carbon atoms, and the number of carbon atoms is 1 from the bulk of the acid generated and its diffusion distance. ⁇ 10 is preferred. In particular, branched or ring-shaped ones are preferable because of their short diffusion distances. Specifically, a methyl group, an ethyl group, a propyl group, a butyl group, an octyl group, and the like are preferable because they can be synthesized at a low cost.
  • the fluorination rate when part or all of the hydrogen atoms are fluorinated is preferably 10 to 100%. More preferably, it is 50 to 100%, and in particular, the one in which all the hydrogen atoms are substituted with fluorine atoms is preferable because the strength of the acid becomes strong.
  • Specific examples thereof include trifluoromethane sulfonate, perfluorobutane sulfonate, perfluorooctane sulfonate, perfluorobenzene sulfonate, and the like.
  • R 12a S0 3 "(a7) In the above general formula (a 7), R 12a includes the structure represented by the following general formula (a 8) and (a 9) and the structure represented by the chemical formula (a 10) .
  • X a is a linear or branched alkylene group in which at least one hydrogen atom is substituted with a fluorine atom
  • the alkylene group has 2 to 6 carbon atoms, preferably 3 to 5 and most preferably 3 carbon atoms.
  • the alkylene group or Y a of X a, the alkyl groups of Z a the larger the number of hydrogen atoms substituted with fluorine atom is increasing the strength of an acid, to preferred.
  • the proportion of fluorine atoms in the alkylene group or alkyl group, that is, the fluorination rate, is preferably 70 to 100%, more preferably 90 to 100%, and most preferably all hydrogen atoms.
  • Preferable examples of the onium salt having a naphthalene ring in the cation moiety include compounds represented by the following chemical formulas (a 1 3) and (a 1 4).
  • a compound of the general formula (a2) is preferably used, and a preferable value of n is 2, and preferably a divalent carbon.
  • a substituted or unsubstituted alkylene group having 1 to 8 carbon atoms, or a substituted or unsubstituted aromatic group, and preferable R 5a is a substituted or unsubstituted alkyl group having 1 to 8 carbon atoms, or Although it is a substituted or unsubstituted aryl group, it is not limited thereto.
  • the component (A) as described above may be used alone or in combination of two or more.
  • the component (B) used in the chemically amplified positive photoresist composition for low-temperature dry etching according to the present invention is composed of nopolac resin (B 1), polyhydroxystyrene resin (B2), and acrylic resin (B3). It may be a resin containing at least one kind, or may be a mixed resin or a copolymer.
  • the component (B) includes at least a novolac resin (B 1 _ 1), a polyhydroxystyrene resin (B2-1), and an acrylic resin (B3-1) that are soluble in Al force. At least 1 selected from the group consisting of nopolac resin (B1-2), polyhydroxystyrene resin (B2-2), and acrylic resin (B3-2), which increases the solubility in alkali by the action of acid. It is preferably a mixed resin with seeds.
  • the nopolac resin can be obtained, for example, by addition condensation of an aromatic compound having a phenolic hydroxyl group (hereinafter simply referred to as “phenol”) and an aldehyde in the presence of an acid catalyst.
  • phenols used in this case include phenol, o_cresol, m_cresol, p_cresol, o_etizolefenosol, m_etizolefenozo , P_etizolephenol, o-butylphenol, m-butylphenol, p-butylphenol, 2,3-xylenol, 2,4_xylenol, 2,5_xylenol, 2,6-xysilenol, 3, 4 _ xylenol, 3, 5 _ xylenol, 2, 3, 5-trimethylphenol, 3, 4, 5_ trimethylphenol, p-phenylphenol, resorcinol, hydroquinone, hydroquinone monomethyl ether,
  • aldehydes include formaldehyde, furfural, benzaldehyde, ditrobensaldehyde, and acetoaldehyde.
  • the catalyst for the addition condensation reaction is not particularly limited.
  • hydrochloric acid, nitric acid, sulfuric acid, formic acid, oxalic acid, acetic acid, and the like are used for the acid catalyst.
  • the polyhydroxystyrene resin ( ⁇ 2 _ 1) which is soluble in the Al force has a mass average molecular weight of 1,000 to 50,000.
  • Examples of the hydroxystyrene-based compound constituting such a polyhydroxystyrene resin include ⁇ -hydroxystyrene, monomethylhydroxystyrene, monoethylhydroxystyrene, and the like. Further, the polyhydroxy The styrene resin is preferably a copolymer with a styrene resin, and examples of the styrene compound constituting the styrene resin include styrene, chlorostyrene, chloromethylstyrene, vinyltoluene, and monomethylstyrene. It is done.
  • the acryl resin (B 3 _ 1) having a resolvable strength is preferably a mass average molecular weight of 5 0, 0 0 to 80 0, 0 0 0.
  • Such an acryl resin preferably contains a monomer derived from a polymerizable compound having an ether bond, and a monomer derived from a polymerizable compound having a force loxyl group.
  • Examples of the polymerizable compound having an ether bond include 2_methoxychetyl (meth) acrylate, methoxytriethylene glycol (meth) acrylate, 3-methoxybutyl (meth) acrylate, and ethyl.
  • Has ether bonds and ester bonds such as carbitol (meth) acrylate, phenoxypolyethylene glycol (meth) acrylate, methoxypolypropylene glycol (meth) acrylate, tetrahydrofurfuryl (meth) acrylate (meta) )
  • Acrylic acid derivatives and the like can be exemplified, and preferably 2_methoxyethyl acrylate and methoxytriethylene glycol acrylate. These compounds can be used alone or in combination of two or more.
  • Examples of the polymerizable compound having a strong lpoxyl group include monocarboxylic acids such as acrylic acid, methacrylic acid, and crotonic acid, dicarboxylic acids such as maleic acid, fumaric acid, and itaconic acid, and 2-methacryloyloxychee.
  • Illustrative compounds such as tyrosuccinic acid, 2_methacryloyloxychetylmaleic acid, 2_methacryloyloxychetyl phthalic acid, 2_methacryloyloxychetylhexahydrophthalic acid, etc.
  • acrylic acid and methacrylic acid are used. These compounds can be used alone or in combination of two or more.
  • the nopolac resin (B 1 -2) whose solubility in the Al force is increased by the action of the acid preferably has a mass average molecular weight of 1,000 to 50,000.
  • nopolac resin (B 1 _2) that increases the solubility in the Al force a resin represented by the following general formula (b 1) can be used.
  • R 1 b is an acid dissociable, dissolution inhibiting group
  • R 3b is each independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, and n represents a repeating unit.
  • the acid dissociable, dissolution inhibiting group represented by R 1 b is a linear or branched group having 1 to 6 carbon atoms represented by the following general formula (b 2) or (b 3): Or a cyclic alkyl group, a tetrahydrovinylyl group, a tetrahydrofuranyl group, or a trialkylsilyl group.
  • R 4b and R 5b are each independently hydrogen
  • R 6b is a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms
  • R 7 b is a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms
  • o is 0 or 1.
  • the linear or branched alkyl group having 1 to 6 carbon atoms includes a methyl group, an ethyl group, a propyl group, an isopropyl group, an n_butyl group, an iso-butyl group, a tert_ Examples include a butyl group, a pentyl group, an isopentyl group, a neopentyl group, and the like, and examples of the cyclic alkyl group include a cyclopentyl group and a cyclohexyl group.
  • the acid dissociable, dissolution inhibiting group represented by the general formula (b2) specifically, a methoxetyl group, an ethoxyethyl group, an n-propoxycetyl group, an iso-propoxychetyl group, n-butoxetyl group, iso-butoxychetyl group, tert-butoxychetyl group, cyclohexyloxychetyl group, methoxypropyl group, ethoxypropyl group, 1-methoxy-1-methylethyl group, 1_ethoxy_1_methylethyl group
  • the acid dissociable, dissolution inhibiting group of the above formula (b 3) include a tert-butoxycarbonyl group and a tert-butoxycarbonyl group.
  • the trialkylsilyl group include those having 1 to 6 carbon atoms in each alkyl group such as a trimethylsilyl group and a
  • the polyhydroxystyrene resin (B2-2) whose solubility in the Al force is increased by the action of the acid preferably has a mass average molecular weight of 1,000 to 50,000.
  • a resin represented by the following general formula (b4) can be used as such a polyhydroxystyrene resin (B2-2).
  • R 8 b is a hydrogen atom or an alkyl having 1 to 6 carbon atoms.
  • R 9 b is an acid dissociable, dissolution inhibiting group, and n is a repeating unit.
  • Examples of the linear or branched alkyl group having 1 to 6 carbon atoms include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n_butyl group, an iso-butyl group, a tert_ Examples include a butyl group, a pentyl group, an isopentyl group, a neopentyl group, and the like, and examples of the cyclic alkyl group include a cyclopentyl group and a cyclohexyl group.
  • the polyhydroxystyrene resin (B2-2) which has increased solubility in the Al force due to the action of the acid, is composed of other polymerizable compounds for the purpose of appropriately controlling physical and chemical properties. Can be included as a unit.
  • examples of such a polymerizable compound include a known radical polymerizable compound and an anion polymerizable compound.
  • monocarboxylic acids such as acrylic acid, methacrylic acid, and crotonic acid
  • dicarboxylic acids such as maleic acid, fumaric acid, and itaconic acid
  • 2-methacryloyloxychetyl succinic acid 2-methacryloylloxetyl maleic acid
  • Methacrylic acid derivatives such as 2-methacryloyloxychetyl phthalic acid, 2-methacryloyloxychetyl hexahydrophthalic acid, etc.
  • the acryl resin (B 3-2), whose solubility in alcohol due to the action of the acid increases, preferably has a mass average molecular weight of 10,000 to 500,000.
  • acrylic resin (B3-2) a resin represented by the following general formula (b5) (b7) can be used.
  • b to R 1 7 b are each independently water atom or a linear or branched alkyl group having a carbon number of 1-6, a fluorine atom or a carbon atom number of 1 to 6 linear or branched A fluorinated alkyl group (however, R 11 b is not a hydrogen atom), and X forms a hydrocarbon ring of 5 to 20 carbon atoms with the carbon atom to which it is bonded; Has a substituent And n is a repeating unit, p is 0 to 4, and q is 0 or 1.
  • the linear or branched alkyl group having 1 to 6 carbon atoms includes a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an iso-butyl group, a tert_ Examples include a butyl group, a pentyl group, an isopentyl group, a neopentyl group, and the like, and examples of the cyclic alkyl group include a cyclopentyl group and a cyclohexyl group.
  • the fluorinated alkyl group is one in which part or all of the hydrogen atoms of the alkyl group are substituted with fluorine atoms.
  • R 1 1 b is preferably a linear or branched alkyl group having 2 to 4 carbon atoms from the viewpoint of high contrast, good resolution, depth of focus, and the like.
  • the R 1 3 b, as the R 1 4 b, R 1 6 b, and R 1 7 b, is preferably a hydrogen atom or a methyl group.
  • X b together with the carbon atom to which it is bonded forms an aliphatic cyclic group having 5 to 20 carbon atoms.
  • an aliphatic cyclic group include groups in which one or more hydrogen atoms have been removed from a polycycloalkane such as a monocycloalkane, bicycloalkane, tricycloalkane, or tetracycloalkane.
  • one or more hydrogen atoms from monocycloalkanes such as cyclopentane, cyclohexane, cycloheptane, and cyclooctane
  • polycycloalkanes such as adamantane, norpolnan, isopornan, tricyclodecane, and tetracyclododecane.
  • a group obtained by removing one or more hydrogen atoms from cyclohexane or adamantane (which may further have a substituent) is preferable.
  • the Y is an aliphatic cyclic group or an alkyl group, and is a polycycloalkane, bicycloalkane, tricycloalkane, tetracycloalkane or the like.
  • Examples include groups in which one or more hydrogen atoms have been removed from cycloalkane.
  • one or more hydrogen atoms are removed from monocycloalkanes such as cyclopentane, cyclohexane, cycloheptane, cyclooctane, and polycycloalkanes such as adamantane, norpolnan, isopornan, tricyclodecane, and tetracyclododecane.
  • a group obtained by removing one or more hydrogen atoms from adamantane (which may further have a substituent) is preferable.
  • Y b is an alkyl group
  • the number of carbon atoms is 1 to 20, preferably 6 to
  • Such an alkyl group is particularly preferably an alkoxyalkyl group, and examples of such an alkoxyalkyl group include 1-methoxytyl group, 1-ethoxychetyl group, 1_n-propoxychetyl group, 1_iso _Propoxychetyl group, 1 _ n-butoxetyl group, 1 _ iso _butoxychetyl group, 1 _ tert _ butoxychetyl group, 1-methoxypropyl group, 1 _ethoxypropyl group, 1 —methoxy 1 Group, 1-ethoxy-1-1-methylethyl group and the like.
  • acryl resin represented by the general formula (b5) include those represented by the following general formulas (b5_1) to (b5_3).
  • R 18b in the above general formulas (b 5_1) to (b 5_3) is a hydrogen atom or a methyl group, and n is a repeating unit.
  • acrylic resin represented by the general formula (b 6) include those represented by the following general formulas (b 6_1) to (b 6_28).
  • acrylic resin represented by the general formula (b7) include those represented by the following general formulas (b7_1) to (b7_22).
  • (B3-2) is a resin comprising a copolymer containing structural units derived from a polymerizable compound having an ether bond with respect to the structural units of the general formulas (b 5) and (b 7). It is preferable.
  • Such a structural unit is a structural unit derived from a polymerizable compound having an ether bond.
  • the polymerizable compound having an ether bond include 2-methoxetyl (meth) acrylate, 2-ethoxyethyl (meth) acrylate.
  • Radical polymerizable compounds such as (meth) acrylic acid derivatives having an ether bond and an ester bond, such as toxipolybut polypyrene glycol (meth) acrylate, tetrahydrofurfuryl (meth) acryl
  • the acrylic resin (B 3-2) whose solubility in the Al force is increased by the action of the acid, contains other polymerizable compounds as structural units for the purpose of appropriately controlling physical and chemical properties. be able to.
  • examples of such polymerizable compounds include known radical polymerizable compounds and anion polymerizable compounds.
  • monostrength rubonic acids such as acrylic acid, methacrylic acid, and crotonic acid
  • dicarboxylic acids such as maleic acid, fumaric acid, and itaconic acid
  • 2 methacryloyloxetyl succinic acid, 2_methacryloyloxychetyl maleic acid , 2-methacryloyloxychetyl phthalic acid, 2-methacryloyl oxychetyl hexahydrophthalic acid, and other methacrylic acid derivatives having a forceful loxyl group and an ester bond
  • methyl (meth) acrylate, ethyl (meth) acrylate, (Meth) acrylic acid alkyl esters such as butyl (meth) acrylate; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylic acid (meth) acrylic acid hydroxy Alkyl esters; phenyl (meth) acrylic (Meth) acrylic acid
  • Aliphatic compounds containing vinyl groups Conjugated olefins such as butadiene and isoprene; Polymerizable compounds containing nitrile groups such as acrylonitrile and methacrylonitrile; Chlorine-containing polymerizable compounds such as vinyl chloride and vinylidene chloride; And amide bond-containing polymerizable compounds such as methacrylamide.
  • the alkali-soluble resin components represented by (B 1 _ 1), (B2_ 1), and (B3-1) are represented by (B 1 _2), (B2-2), And it is preferable to use a mixed resin in which resin components whose alkali solubility is increased by the action of the acid represented by (B3-2) are combined.
  • the component (B) is (B 1 _ 1), (B 2-1), and
  • the Al force-resoluble resin component the Al force-resoluble nopolac resin represented by (B 1 _ 1) and (B 2 _ 1) and the Al force re-soluble polyhydroxystyrene resin (B3— It is preferable to use a mixed resin combined with an acryl resin whose alkali solubility is increased by the action of the acid represented by 2).
  • alkali-soluble nopolac resins (B1-1) it is preferable to use a composition in which m-cresol and p-cresol are combined as phenols, and in particular, m_cresol and p_cresol. Alkali-soluble nopolac resin in which 1 mol is combined at a mass ratio of 50:50 to 70:30 is preferable.
  • the structural unit represented by the general formula (7) has an ether bond.
  • a copolymer having a structural unit derived from a polymerizable compound, a (meth) acrylic acid unit, and a structural unit composed of a (meth) acrylic acid alkyl ester is preferable.
  • Such a copolymer is preferably a copolymer represented by the following general formula (b8).
  • b is a hydrogen atom or a methyl group
  • R 21 b is a linear or branched alkyl group or alkoxyalkyl group having 1 to 6 carbon atoms
  • R 22 b is a carbon number of 2 to 4 is a linear or branched alkyl group
  • X s is as defined above.
  • s, t, and u are each in a mass ratio, s is 1 to 30% by mass, and t is 20 to 70% by mass. 0 / o, and u is 20 to 70% by mass.
  • the component (B) preferably has a glass transition point of 0 QC or lower for the entire resin component.
  • the glass transition point is Calculated in terms of the lath transition point.
  • the theoretical glass transition point is obtained by adding the product obtained by multiplying the glass transition point of each resin or constituent unit by the number of mass parts occupied by each resin or constituent unit and dividing the result by 100. .
  • the resin component ( ⁇ ′) used in the chemically amplified negative photoresist composition for low-temperature dry etching according to the present invention comprises at least a nopolak resin ( ⁇ ′ 1), a polyhydroxystyrene resin ( ⁇ ′ 2), and an acrylic resin ( ⁇ 'At least one of 3).
  • nopolak resin ( ⁇ '1), polyhydroxystyrene resin ( ⁇ ' 2), and acrylic resin ( ⁇ '3) those skilled in the art would be appropriate from the corresponding resin group in the above ( ⁇ ). You can select and use.
  • Organic solvents include ketones such as acetone, methyl ethyl ketone, cyclohexanone, methyl isoamyl ketone, and 2_heptanone; Ethylene glycol, ethylene glycol monoacetate, diethylene glycol, diethylene glycol monoacetate, propylene glycol, propylene glycol monoacetate, dipropylene glycol, and monomethyl ether of dipropylene glycol monoacetate, monoethyl ether Polyhydric alcohols such as monopropyl ether, monobutyl ether, or monophenyl ether and derivatives thereof; cyclic ethers such as dioxane; ethyl formate, methyl lactate, lactic acid ethyl Methyl acetate, Ethyl acetate, Ptyl acetate, Methyl pyruvate, Methyl acetoacetate, Ethyl acetoacetate, Ethyl pyru
  • the chemically amplified negative photoresist composition for low-temperature dry etching according to the present invention is appropriately mixed with an organic solvent as the component (C).
  • this organic solvent include 1_ (3-methoxy) mono-ptylacetate, 2_ethoxybutylacetate, 2-hydroxy_2-methyl, 2-hydroxy_3-methylbutyrate, ethyl 2-hydroxypropionate, 2-hydroxymethyl pionate, 2-butanone, 2_heptanone, 2_methyl_3-methoxyptylacetate, 2_methyl_3-methoxypentylacetate, 2-methoxybutyla Cetate, 2-Methoxypentylacetate, 3-Ethyl 3-Methylbutyrate, 3_Ethyl ethoxypropionate, 3—Methyl_3-Methoxybutylacetate, 3_Methyl _ 3—Methoxypentyl citrate, 3 _Methyl
  • the amount of these organic solvents used depends on the film thickness of the photoresist layer obtained by using the chemically amplified positive or negative photoresist composition for low-temperature dry etching according to the present invention (for example, by the spin coat method). Is preferably within a range where the solid content concentration is 30% by mass or more. Preferably, the film thickness of the photoresist layer obtained using the composition according to the invention is in the range of 5 m to 20 Om.
  • the chemically amplified positive or negative photoresist composition for dry etching at low temperature according to the present invention further has a surface activity depending on the purpose of improving coating property, defoaming property, leveling property and the like. It is also possible to mix the agent arbitrarily.
  • surfactants include BM—1 000, BM- 1 1 00 (both trade names; manufactured by BM Chemiichi), Mega-Fac F 1 42 D, Mega-Fac F 1 72, Mega-Fac F 1 73, MegaFuck F 1 83 (all trade names; manufactured by Dainippon Ink & Chemicals, Inc.), FLORADE FC— 1 35, FLORADE FC— 1 70C, FLORADE FC C_430, FLORADE FC—431 (All are trade names; manufactured by Sumitomo 3M Limited), Sulfuron S— 1 1 2, Sulfuron S— 1 1 3, Sulfuron S— 1 3 1, Sulfuron S— 41, Sulfuron S— 1 45 (all trade names; manufactured by Asahi Glass Co., Ltd.), S H — 28 PA, S H — 1 90, S H — 1 93, SZ — 6032, SF — 8428 (all trade names; East There is a commercially available fluorosurfact
  • the chemical amplification type positive photoresist composition for low-temperature dry etching according to the present invention may further contain (D) a polyvinyl resin as necessary.
  • a polyvinyl resin is poly (vinyl lower alkyl ether) and can be obtained by polymerizing a single or a mixture of two or more vinyl lower alkyl ethers represented by the following general formula (d 1). ) Made of polymer.
  • R 1d is a linear or branched alkyl group having 1 to 6 carbon atoms.
  • Such a polyvinyl resin is a polymer obtained from a vinyl compound.
  • Specific examples of such a polyvinyl resin include polyvinyl chloride, polystyrene, polyhydroxystyrene, polyvinyl acetate, and polyvinyl acetate.
  • examples include benzoic acid, polyvinyl methyl ether, polyvinyl ethyl ether, polyvinyl alcohol, polyvinyl pyrrolidone, polyvinyl phenol, and copolymers thereof. Of these, polyvinyl methyl ether is preferred in view of the low glass transition point.
  • the mass average molecular weight of such a polyvinyl resin is preferably from 10,000 to 20000, and more preferably from 50000 to 100,000. By blending such a polyvinyl resin, it is possible to impart resistance to the dry etching process even when the dry etching process is performed under extremely low temperature conditions of 0 ° C. to 1100 ° C. .
  • the content is preferably 5 to 95 parts by mass with respect to 100 parts by mass of the component (B).
  • the (D ′) plasticizer used in the chemically amplified negative photoresist composition for low temperature dry etching it is at a very low temperature of 0 ° C. or less, particularly 0 ° C. to ⁇ 100 ° C. Even when dry etching is performed at In addition, it is possible to ensure resistance to dry etching treatment, and further, there is an effect that cracks and the like are not generated even when cooled from room temperature to extremely low temperature.
  • the mass ratio of the component ( ⁇ ') and the component (D') described above is preferably in the range of 5:95 to 95: 5.
  • the (D ′) plasticizer at least one selected from among acrylic resins and polyvinyl resins can be used.
  • the acrylic resin (D ′ 1) preferably has a mass average molecular weight of 5 0, 0 0 0 to 8 0 0, 0 0 0.
  • Such an acryl resin preferably contains a monomer derived from a polymerizable compound having an ether bond and a monomer derived from a polymerizable compound having a force loxyl group.
  • Examples of the polymerizable compound having an ether bond include 2_methoxychetyl (meth) acrylate, methoxytriethylene glycol (meth) acrylate, 3-methoxybutyl (meth) acrylate, and ethyl.
  • Has ether bonds and ester bonds such as carbitol (meth) acrylate, phenoxypolyethylene glycol (meth) acrylate, methoxypolypropylene glycol (meth) acrylate, tetrahydrofurfuryl (meth) acrylate (meta) )
  • Acrylic acid derivatives and the like can be exemplified, and preferably 2_methoxyethyl acrylate and methoxytriethylene glycol acrylate. These compounds can be used alone or in combination of two or more.
  • Examples of the polymerizable compound having a strong lpoxyl group include monocarboxylic acids such as acrylic acid, methacrylic acid, and crotonic acid, dicarboxylic acids such as maleic acid, fumaric acid, and itaconic acid, and 2-methacryloyloxychee. Powers such as tilsuccinic acid, 2_methacryloyloxychetylmaleic acid, 2_methacryloyloxychetyl phthalic acid, 2_methacryloyloxychetylhexahydrophthalic acid Examples thereof include compounds having a lupoxyl group and an ester bond, preferably acrylic acid and methacrylic acid. These compounds can be used alone or in combination of two or more.
  • the polyvinyl resin (D ′ 2) preferably has a mass average molecular weight of 10,000 to 200,000.
  • Such a polyvinyl resin is preferably poly (vinyl lower alkyl ether), and is obtained by polymerizing a single or mixture of two or more of the vinyl lower alkyl ethers represented by the general formula (d 1). Made of (co) polymer.
  • the chemical amplification positive type or negative type photoresist composition for low temperature dry etching according to the present invention may further contain an acid diffusion control agent as component (E).
  • the acid diffusion controller is preferably a nitrogen-containing compound, and if necessary, an organic carboxylic acid, phosphorus oxoacid or a derivative thereof can be contained.
  • nitrogen-containing compound (e 1) examples include trimethylamine, jetylamine, triethylamine, di-n-propylamine, tri_n-propylamine, tribenzylamine, diethanolamine, triethanolamine, and n_hexylamine.
  • Such a nitrogen-containing compound is usually used in a range of 0 to 5% by mass, more preferably 0 to 5%, when the component (B) or the component (') described above is 100% by mass. Used in the range of 3% by mass.
  • organic carboxylic acid malonic acid, citrate, phosphonic acid, succinic acid, benzoic acid, salicylic acid and the like are preferable, and salicylic acid is particularly preferable.
  • Examples of phosphorus oxoacids or derivatives thereof include phosphoric acid, phosphoric acid di-n-butyl ester, phosphoric acid diphenyl ester, and the like, derivatives such as phosphonic acid, phosphonic acid, and the like.
  • Phosphonic acids such as dimethyl ester, phosphonic acid di_n_butyl ester, phenylphosphonic acid, phosphonic acid diphenyl ester, phosphonic acid dibenzyl ester and derivatives thereof, phosphinic acid, phenylphosphinic acid, etc.
  • Derivatives such as finic acid and esters thereof are mentioned, and among these, phosphonic acid is particularly preferable. These may be used alone or in combination of two or more.
  • organic carboxylic acids or phosphorus oxoacids or derivatives thereof are usually in the range of 0 to 5% by mass, when the component (B) or ( ⁇ ') described above is 100% by mass. More preferably, it is used in the range of 0 to 3% by mass.
  • an adhesion assistant can be further used in order to improve the adhesion to the substrate.
  • a functional silane coupling agent is preferable.
  • the above-mentioned functional silane coupling agent means a silane coupling agent having a reactive substituent such as a strong l-poxyl group, a methacryloyl group, an isocyanate group, and an epoxy group.
  • Methoxysilylbenzoic acid r-methacryloxypropyl trimethoxysilane, vinyltriacetoxysilane, vinyltrimethoxysilane,: r-glycidoxypropyl trimethoxysilane, ⁇ - (3,4_epoxycyclohexyl
  • the blending amount is preferably 20 parts by mass or less with respect to 100 parts by mass of the ( ⁇ ) component or the ( ⁇ ′) component.
  • the chemically amplified positive or negative photoresist composition for low-temperature dry etching according to the present invention includes an acid or an acid anhydride for fine adjustment of solubility in an alkaline developer.
  • a high boiling point solvent can be added.
  • acids and acid anhydrides mentioned above include acetic acid, propionic acid, ⁇ -butyric acid, isobutyric acid, ⁇ -valeric acid, isovaleric acid, benzoic acid, cinnamic acid and other monocarboxylic acids, lactic acid, 2 —Hydroxybutyric acid, 3-hydroxybutyric acid, salicylic acid, m-hydride Loxybenzoic acid, P-hydroxybenzoic acid, 2-hydroxycinnamic acid, 3-hydroxycinnamic acid, 4-hydroxycinnamic acid, 5-hydroxyisophthalic acid, hydroxymonocarponic acid such as syringic acid, and citric acid , Succinic acid, glutaric acid, adipic acid, maleic acid, itaconic acid, hexahydrophthalic acid, phthalic acid, isophthalic acid, terephthalic acid, 1,2-cyclohexanedicarboxylic acid, 1,2,4-cyclohe
  • Examples of the high boiling point solvent described above include N-methylformamide, N, N-dimethylformamide, N-methylformamide, N-methylacetamide, N, N-dimethylacetamide. , N-methylpyrrolidone, dimethyl sulfoxide, benzyl ether ester, dihexyl ether, acetonyl acetone, isophorone, caproic acid, caprylic acid, 1-octanol, 1-nonanol, benzyl alcohol, benzyl acetate, Examples thereof include ethyl benzoate, cetyl oxalate, jetyl maleate, butylactone, ethylene carbonate, propylene carbonate, and phenylacetate soap acetate.
  • the amount of the compound used for finely adjusting the solubility in the above-mentioned Al-redeveloper can be adjusted according to the application ⁇ application method, and particularly if the composition can be mixed uniformly. Although not limited, it is 60 mass% or less with respect to the composition obtained, Preferably it is 40 mass% or less.
  • crosslinking agent (F) used in the chemically amplified negative photoresist composition for low-temperature dry etching according to the present invention examples include amino compounds such as melamine resin, urea resin, guanamine resin, glycoluril-formaldehyde resin, succinyl amide.
  • amino compounds such as melamine resin, urea resin, guanamine resin, glycoluril-formaldehyde resin, succinyl amide.
  • Formmaldehyde resins, ethylene urea-formaldehyde resins, and the like are used.
  • alkoxymethylated amino resins such as alkoxymethylated melamine resins and alkoxymethylated urea resins can be suitably used.
  • the above-mentioned alkoxymethylated amino resin is, for example, a condensate obtained by reacting melamine or urea with formalin in a boiling aqueous solution, and lower alcohols such as methyl alcohol, ethyl alcohol, propyl alcohol, butyl alcohol, and isopropyl alcohol. It can be produced by etherification with a catalyst, and then cooling and precipitating the reaction solution.
  • alkoxymethylated amino resin described above include methoxymethylated melamine resin, ethoxymethylated melamine resin, propoxymethylated melamine resin, butoxymethylated melamine resin, methoxymethylated urea resin, and ethoxy.
  • examples include methylated urea resins, propoxymethylated urea resins, and butoxymethylated urea resins.
  • the alkoxymethylated amino resin may be used alone or in combination of two or more.
  • an alkoxymethylated melamine resin is preferable because it can form a stable resist pattern with a small dimensional change amount of the resist pattern with respect to a change in radiation dose.
  • methoxymethylated melamine resins, ethoxymethylated melamine resins, propoxymethylated melamine resins and butoxymethylated melamine resins are preferred.
  • the crosslinking agent for component (F) is the total amount of component (A), ( ⁇ '), (D').
  • a filler may be added to the chemically amplified positive photoresist or negative photoresist composition for dry etching according to the present invention as long as the characteristics are not impaired. You can also.
  • the filler include silica, alumina, talc, bentonite, zirconium silica, and powdered glass.
  • Coloring agents include alumina white, clay, barium carbonate, barium sulfate, and other extender pigments, as well as zinc white, lead white, yellow lead, red lead, ultramarine, bitumen, titanium oxide, zinc chromate, bengara, strength Inorganic pigments such as pump racks, as well as organic pigments such as brilliant strength 6 B, permanent red 6 B, permanent red R, benzidine yellow, phthalocyanine blue, phthalocyanine green, magenta, rhodamine And direct dyes such as Direct Scarlet and Direct Orange, and acidic dyes such as Mouth Serine and Meta-Louis Erotic.
  • the viscosity modifier include bentonite, silica gel, and aluminum powder.
  • the addition amount of these additives is 5% by mass or less with respect to the obtained positive composition and 50% by mass or less with respect to the negative composition.
  • Preparation of a chemically amplified positive type or negative type photoresist composition for low-temperature dry etching can be performed by, for example, mixing and stirring each of the above components in a usual manner when no filler or pigment is added. If no filler or pigment is added, it may be dispersed and mixed using a disperser such as a dissolver, a homogenizer, or a three-roll mill, if necessary. Further, after mixing, it may be filtered using a mesh or a membrane filter.
  • a disperser such as a dissolver, a homogenizer, or a three-roll mill
  • the chemically amplified positive or negative photoresist composition for low-temperature dry etching according to the present invention comprises 5 to 100; U m, more preferably 5 to 20 O m on a support. It is suitable for forming a thick photoresist layer and can be applied to processing under low-temperature conditions.
  • the above-described photoresist layer can be produced, for example, as follows.
  • Radiation for example, UV or visible light with a wavelength of 300 to 500 nm
  • Radiation is selectively applied to the photoresist layer obtained as described above through a mask with a predetermined pattern. By exposing to, expose.
  • radiation sources a low-pressure mercury lamp, a high-pressure mercury lamp, an ultra-high pressure mercury lamp, a metal halide lamp, an argon gas laser, or the like can be used.
  • radiation means ultraviolet rays, visible rays, far ultraviolet rays, X-rays, electron rays, ion rays, and the like.
  • the amount of radiation irradiation varies depending on the type of each component in the composition, the blending amount, the film thickness of the coating, etc., but for example, when using an ultra-high pressure mercury lamp, it is 100-10000 mJ / cm 2 , more preferably 1 00 to 2000 mJ / cm 2.
  • Developers include, for example, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, ammonia water, ethylamine, n-propylamine, jetylamine, di-n-propylamine, triethylamine, methyl jet Tyramine, dimethylethanolamine, triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, pyrrole, piperidine, 1, 8_ diazabicyclo [5, 4, 0] _ An aqueous solution of an alkali such as 7_undecene, 1,5-diazabicyclo [4,3,0] _5-nonane can be used.
  • aqueous solutions of alcoholic compounds have water-solubility such as methanol and ethanol.
  • An aqueous solution to which an appropriate amount of an organic solvent or a surfactant is added can also be used as a developer.
  • the development time varies depending on the type of each component of the composition, the blending ratio, and the dry film thickness of the composition, it is usually 1 to 30 minutes, and the development method is a liquid method, a detting method, a paddle. Any of the method and spray development method may be used. After development, wash with running water for 30 to 90 seconds and dry using an air gun, oven, etc.
  • the low-temperature dry etching positive type photoresist The coating composition was applied at 1 000 rpm for 25 seconds, and then pre-baked on a hot plate at 110 ° C. for 6 minutes to form a coating film having a thickness of about 2 Om.
  • ultraviolet exposure was performed through a pattern mask using an ultra-high pressure mercury lamp (USH-250 D manufactured by Usio) at an exposure amount of 150 Om J / cm 2 .
  • the coating film was developed with the current image solution (trade name; P_7 G, manufactured by Tokyo Ohka Kogyo Co., Ltd.). Thereafter, it was washed with running water and blown with nitrogen to obtain a patterned cured product.
  • the patterned cured product produced in Preparation Example 1 above as a mask The silicon substrate described above was etched and etched to a depth of 1 80; Um. At this time, the resist pattern was in a state in which no cracks or the like were generated, and a single-hole shape was formed on the silicon substrate.
  • m_cresol and ⁇ _cresol were mixed at a mass ratio of 60:40, formalin was added thereto, and the mixture was condensed by a known method using a oxalic acid catalyst to obtain a nopolak resin.
  • This resin was subjected to a fractionation treatment, and a low molecular region was cut off to obtain a nopolak resin ( ⁇ ′ 1) having a mass average molecular weight of 10,000.
  • Formalin was added to m-cresol and condensed by a known method using a oxalic acid catalyst to obtain a nopolak resin.
  • the resin was subjected to a fractionation treatment, and the low molecular weight region was cut to obtain a nopolac resin ( ⁇ ′ 2) having a mass average molecular weight of 6,000.
  • the component ( ⁇ ') is replaced with nopolac resin ( ⁇ ' 2), and the component (D ') is obtained by subjecting the component to a vapor-phase high-temperature and high-pressure polymerization reaction in the presence of an ethyl vinyl ether catalyst. Except for the ether polymer, a negative photoresist composition was prepared in the same manner as in Preparation Example 1, and the characteristics evaluation described later was performed.
  • a negative resist composition was prepared in the same manner as in Preparation Example 1, except that the component was changed to 1 part by mass of tris (2,3_dibromopropyl) isocyanurate, and the characteristic evaluation described later was performed.
  • Preparation Example 4 The ( ⁇ ') component is replaced with a hydroxystyrene polymer having a weight average molecular weight of 2,500, and the (D') component is soluble in alcohol by being subjected to gas phase high temperature and high pressure polymerization reaction in the presence of ethyl vinyl ether as a catalyst.
  • a negative photoresist composition was prepared in the same manner as in Preparation Example 1 except that vinylethyl ether polymer was used, and the characteristics evaluation described later was performed.
  • a negative photoresist composition for low-temperature dry etching is applied on a silicon substrate.
  • UV exposure was performed with an exposure amount of 150 Om J / cm 2 using an ultrahigh pressure mercury lamp (USH-250D manufactured by Usio) through a pattern mask for resolution measurement.
  • the coating film was developed with a developer (trade name: P_7 G; manufactured by Tokyo Ohka Kogyo Co., Ltd.). Thereafter, it was washed with running water and blown with nitrogen to obtain a patterned cured product.
  • the above-mentioned silicon substrate was etched using the patterned cured product as a mask, and an etching process was performed up to a depth of 180 m.
  • the resist patterns were in a state where no cracks or the like were generated, and a hole shape having a diameter of 180 m was formed on the silicon substrate.

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)

Abstract

La présente invention concerne une composition de photorésine positive ou négative du type à amplification chimique pour gravure à sec, satisfaisant les exigences (1) selon lesquelles une quelconque fissure pouvant être attribuée à un choc thermique ne se produit pas même lors d'une exposition à de basses températures de 0 °C ou moins, (2) un film ayant une large épaisseur n'étant pas inférieure à 5 μm peut être formé, (3) une sensibilité élevée peut être obtenue et (4) une séparation aisée avec un solvant classique est possible. Ladite composition positive est caractérisée en ce qu'elle comprend (A) un agent générant un photoacide, (B) un composant à base de résine et (C) un solvant organique. Ladite composition négative comprend (A) un agent générant un photoacide, (B') au moins un composant à base de résine choisi parmi des résines novolak, des résines de polyhydroxystyrène et des résines acryliques, (D') au moins un plastifiant choisi parmi des résines acryliques et des résines polyvinyliques, (F) un agent de réticulation et (C) un solvant organique.
PCT/JP2007/000974 2006-10-12 2007-09-07 composition de photorésine positive et négative du type à amplification chimique pour gravure à sec à basse température, et procédé pour la formation d'un motif en photorésine l'utilisant WO2008044326A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006278798A JP2008096717A (ja) 2006-10-12 2006-10-12 低温ドライエッチング用化学増幅型ポジ型ホトレジスト組成物およびこれを用いたホトレジストパターン形成方法
JP2006-278798 2006-10-12
JP2006-291368 2006-10-26
JP2006291368A JP2008107635A (ja) 2006-10-26 2006-10-26 低温ドライエッチング用化学増幅型ネガ型ホトレジスト組成物及びこれを用いたホトレジストパターン形成方法

Publications (1)

Publication Number Publication Date
WO2008044326A1 true WO2008044326A1 (fr) 2008-04-17

Family

ID=39282538

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/000974 WO2008044326A1 (fr) 2006-10-12 2007-09-07 composition de photorésine positive et négative du type à amplification chimique pour gravure à sec à basse température, et procédé pour la formation d'un motif en photorésine l'utilisant

Country Status (2)

Country Link
TW (1) TW200836009A (fr)
WO (1) WO2008044326A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9698014B2 (en) * 2014-07-30 2017-07-04 Taiwan Semiconductor Manufacturing Co., Ltd Photoresist composition to reduce photoresist pattern collapse
US11822242B2 (en) 2019-11-14 2023-11-21 Merck Patent Gmbh DNQ-type photoresist composition including alkali-soluble acrylic resins

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10199789A (ja) * 1997-01-10 1998-07-31 Sony Corp 反射防止膜及びパターンニング方法
JP2003051443A (ja) * 2001-06-28 2003-02-21 Hynix Semiconductor Inc 半導体素子の微細パターン形成方法
JP2007086711A (ja) * 2005-08-26 2007-04-05 Tokyo Ohka Kogyo Co Ltd 膜形成用材料およびパターン形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10199789A (ja) * 1997-01-10 1998-07-31 Sony Corp 反射防止膜及びパターンニング方法
JP2003051443A (ja) * 2001-06-28 2003-02-21 Hynix Semiconductor Inc 半導体素子の微細パターン形成方法
JP2007086711A (ja) * 2005-08-26 2007-04-05 Tokyo Ohka Kogyo Co Ltd 膜形成用材料およびパターン形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9698014B2 (en) * 2014-07-30 2017-07-04 Taiwan Semiconductor Manufacturing Co., Ltd Photoresist composition to reduce photoresist pattern collapse
US11822242B2 (en) 2019-11-14 2023-11-21 Merck Patent Gmbh DNQ-type photoresist composition including alkali-soluble acrylic resins

Also Published As

Publication number Publication date
TW200836009A (en) 2008-09-01

Similar Documents

Publication Publication Date Title
KR101423801B1 (ko) 후막용 화학증폭형 포지티브형 포토레지스트 조성물, 후막용 화학증폭형 드라이 필름 및 후막 레지스트 패턴의 제조 방법
JP5749631B2 (ja) 厚膜用化学増幅型ポジ型ホトレジスト組成物及び厚膜レジストパターンの製造方法
TWI771270B (zh) 化學增幅型正型感光性樹脂組成物
JP2009063824A (ja) ポジ型ホトレジスト組成物、積層体およびパターン形成方法
WO2006126329A1 (fr) Composition de photorésistant positif, photorésistant à couche épaisse, procédé de production d'une matrice résistante épaisse, et procédé de production d’une borne de connexion
KR20170113113A (ko) 화학 증폭형 포지티브형 감광성 수지 조성물
JP2019045622A (ja) 感光性樹脂組成物、パターン形成方法、電子デバイスの製造方法、ポリマーおよびポリマーの製造方法
JP2010185986A (ja) 厚膜用化学増幅型ポジ型フォトレジスト組成物および厚膜レジストパターンの製造方法
KR20200110209A (ko) 감광성 수지 조성물, 감광성 드라이 필름, 감광성 드라이 필름의 제조 방법, 패턴화된 레지스트막의 제조 방법, 주형이 부착된 기판의 제조 방법, 및 도금 조형물의 제조 방법
JP7201034B2 (ja) 感放射線性組成物
JP6195445B2 (ja) ポジ型ホトレジスト組成物、ホトレジスト積層体、ホトレジストパターンの製造方法、及び接続端子の製造方法
JP2009063823A (ja) ポジ型ホトレジスト組成物、積層体およびパターン形成方法
JP4481789B2 (ja) エポキシ硬化剤
JP2016148740A (ja) 厚膜用化学増幅型ポジ型感光性樹脂組成物
JP2016177018A (ja) 感光性樹脂層の形成方法、ホトレジストパターンの製造方法、及びメッキ造形物の形成方法
JP4717612B2 (ja) スプレー塗布用ホトレジスト組成物および積層体
KR20140120847A (ko) 감광성 수지 조성물
JP2008134474A (ja) 厚膜用化学増幅型ドライフィルム及び厚膜レジストパターンの製造方法
JP3710758B2 (ja) 厚膜用ネガ型ホトレジスト組成物、ホトレジスト膜およびこれを用いたバンプ形成方法
WO2008044326A1 (fr) composition de photorésine positive et négative du type à amplification chimique pour gravure à sec à basse température, et procédé pour la formation d'un motif en photorésine l'utilisant
KR20140001795A (ko) 후막용 포지티브형 레지스트 조성물, 후막 레지스트 패턴의 제조 방법, 접속 단자의 제조 방법
CN108241257B (zh) 化学增幅型正型感光性树脂组成物、附有铸模的基板的制造方法以及电镀成形体的制造方法
JP6756541B2 (ja) 基板の製造方法
JP5006013B2 (ja) 厚膜用化学増幅型ポジ型ホトレジスト組成物及び厚膜レジストパターンの製造方法
JP5282532B2 (ja) 感光性樹脂組成物及びフォトレジスト

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07805829

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07805829

Country of ref document: EP

Kind code of ref document: A1