WO2008030047A1 - Dispositif et procédé de dépôt de couches utilisant une polarisation et le comportement de charge des nanoparticules formées au cours du dépôt chimique en phase vapeur - Google Patents

Dispositif et procédé de dépôt de couches utilisant une polarisation et le comportement de charge des nanoparticules formées au cours du dépôt chimique en phase vapeur Download PDF

Info

Publication number
WO2008030047A1
WO2008030047A1 PCT/KR2007/004306 KR2007004306W WO2008030047A1 WO 2008030047 A1 WO2008030047 A1 WO 2008030047A1 KR 2007004306 W KR2007004306 W KR 2007004306W WO 2008030047 A1 WO2008030047 A1 WO 2008030047A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
bias
gas
nanoparticles
deposition
Prior art date
Application number
PCT/KR2007/004306
Other languages
English (en)
Inventor
Nong-Moon Hwang
Chan-Soo Kim
Jae-Ik Lee
Yung-Bin Chung
Woong-Kyu Youn
Original Assignee
Seoul National University Industry Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020060085819A external-priority patent/KR100846718B1/ko
Priority claimed from KR1020070045402A external-priority patent/KR100875712B1/ko
Application filed by Seoul National University Industry Foundation filed Critical Seoul National University Industry Foundation
Priority to US12/440,304 priority Critical patent/US20100183818A1/en
Publication of WO2008030047A1 publication Critical patent/WO2008030047A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

L'invention concerne un dispositif et un procédé de dépôt de couches permettant de réguler la vitesse de dépôt et les propriétés de la couche par l'exploitation du comportement de charge des nanoparticules formées dans la phase gazeuse. Ce dispositif comprend une chambre dans laquelle le substrat est transféré, un système d'alimentation en gaz conçu pour introduire un gaz de réaction dans la chambre, un filament conçu pour émettre de la chaleur afin de dissocier le gaz de réaction introduit, une source d'alimentation électrique conçue pour appliquer un courant alternatif ou continu constant, et une unité de polarisation conçue pour appliquer une polarisation à une ou plusieurs parties des parties suivantes: face supérieure, face latérale et face inférieure du substrat, en utilisant la tension fournie par la source d'alimentation, pendant le dépôt d'une couche sur le substrat à partir du gaz de réaction dissocié, l'unité de polarisation étant séparée du substrat.
PCT/KR2007/004306 2006-09-06 2007-09-06 Dispositif et procédé de dépôt de couches utilisant une polarisation et le comportement de charge des nanoparticules formées au cours du dépôt chimique en phase vapeur WO2008030047A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/440,304 US20100183818A1 (en) 2006-09-06 2007-09-06 Apparatus and method of depositing films using bias and charging behavior of nanoparticles formed during chemical vapor deposition

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020060085819A KR100846718B1 (ko) 2006-09-06 2006-09-06 바이어스를 이용한 막 증착 방법
KR10-2006-0085819 2006-09-06
KR10-2007-0045402 2007-05-10
KR1020070045402A KR100875712B1 (ko) 2007-05-10 2007-05-10 전기장을 이용한 막 증착 장치 및 막 증착 방법

Publications (1)

Publication Number Publication Date
WO2008030047A1 true WO2008030047A1 (fr) 2008-03-13

Family

ID=39157429

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2007/004306 WO2008030047A1 (fr) 2006-09-06 2007-09-06 Dispositif et procédé de dépôt de couches utilisant une polarisation et le comportement de charge des nanoparticules formées au cours du dépôt chimique en phase vapeur

Country Status (2)

Country Link
US (1) US20100183818A1 (fr)
WO (1) WO2008030047A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2374915A1 (fr) * 2008-12-09 2011-10-12 Ulvac, Inc. Appareil de dépôt chimique en phase vapeur à catalyseur

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8900663B2 (en) * 2009-12-28 2014-12-02 Gvd Corporation Methods for coating articles
US8945418B2 (en) * 2011-11-16 2015-02-03 The United States Of America, As Represented By The Secretary Of The Navy Melt stabilization and vapor-phase synthesis of cesium germanium halides
JP2014082322A (ja) * 2012-10-16 2014-05-08 Tokyo Electron Ltd シリコン窒化物膜の成膜方法および成膜装置
KR102083448B1 (ko) 2012-12-20 2020-03-03 삼성디스플레이 주식회사 기상 증착 장치, 이를 이용한 증착 방법 및 유기 발광 표시 장치 제조 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0625856A (ja) * 1991-05-31 1994-02-01 Tonen Corp ダイヤモンドライクカーボン膜の製膜法
KR20020014322A (ko) * 2000-08-17 2002-02-25 구자홍 무촉매에 의한 카본 나노 튜브의 성장방법

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5664441A (en) * 1979-10-30 1981-06-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
US6786997B1 (en) * 1984-11-26 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus
US5512102A (en) * 1985-10-14 1996-04-30 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
DE3717985A1 (de) * 1986-05-28 1987-12-03 Minolta Camera Kk Elektrochrome vorrichtung
FR2621930B1 (fr) * 1987-10-15 1990-02-02 Solems Sa Procede et appareil pour la production par plasma de couches minces a usage electronique et/ou optoelectronique
JP2752235B2 (ja) * 1990-06-26 1998-05-18 株式会社東芝 半導体基板の製造方法
US5058527A (en) * 1990-07-24 1991-10-22 Ricoh Company, Ltd. Thin film forming apparatus
US5962085A (en) * 1991-02-25 1999-10-05 Symetrix Corporation Misted precursor deposition apparatus and method with improved mist and mist flow
WO1992016671A1 (fr) * 1991-03-20 1992-10-01 Canon Kabushiki Kaisha Procede et dispositif de formation d'une couche mince par pulverisation
US5212118A (en) * 1991-08-09 1993-05-18 Saxena Arjun N Method for selective chemical vapor deposition of dielectric, semiconductor and conductive films on semiconductor and metallic substrates
JP2888026B2 (ja) * 1992-04-30 1999-05-10 松下電器産業株式会社 プラズマｃｖｄ装置
JP3146112B2 (ja) * 1993-12-24 2001-03-12 シャープ株式会社 プラズマｃｖｄ装置
TW297135B (fr) * 1995-03-20 1997-02-01 Hitachi Ltd
NL1004886C2 (nl) * 1996-12-23 1998-06-24 Univ Utrecht Halfgeleiderinrichtingen en werkwijze voor het maken daarvan.
JP3317209B2 (ja) * 1997-08-12 2002-08-26 東京エレクトロンエイ・ティー株式会社 プラズマ処理装置及びプラズマ処理方法
US6095085A (en) * 1998-08-20 2000-08-01 Micron Technology, Inc. Photo-assisted remote plasma apparatus and method
TW455912B (en) * 1999-01-22 2001-09-21 Sony Corp Method and apparatus for film deposition
WO2000063956A1 (fr) * 1999-04-20 2000-10-26 Sony Corporation Procede et dispositif pour realiser un depot de couches minces, et procede pour la production d'un dispositif a semiconducteur a couches minces
KR20020080954A (ko) * 2001-04-18 2002-10-26 주성엔지니어링(주) 냉벽 화학기상증착 방법 및 장치
KR100663351B1 (ko) * 2004-11-12 2007-01-02 삼성전자주식회사 플라즈마 처리장치
US20060185595A1 (en) * 2005-02-23 2006-08-24 Coll Bernard F Apparatus and process for carbon nanotube growth

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0625856A (ja) * 1991-05-31 1994-02-01 Tonen Corp ダイヤモンドライクカーボン膜の製膜法
KR20020014322A (ko) * 2000-08-17 2002-02-25 구자홍 무촉매에 의한 카본 나노 튜브의 성장방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2374915A1 (fr) * 2008-12-09 2011-10-12 Ulvac, Inc. Appareil de dépôt chimique en phase vapeur à catalyseur
EP2374915A4 (fr) * 2008-12-09 2012-07-18 Ulvac Inc Appareil de dépôt chimique en phase vapeur à catalyseur

Also Published As

Publication number Publication date
US20100183818A1 (en) 2010-07-22

Similar Documents

Publication Publication Date Title
Kakiuchi et al. Atmospheric-pressure low-temperature plasma processes for thin film deposition
US20090023274A1 (en) Hybrid Chemical Vapor Deposition Process Combining Hot-Wire CVD and Plasma-Enhanced CVD
US20100183818A1 (en) Apparatus and method of depositing films using bias and charging behavior of nanoparticles formed during chemical vapor deposition
JP2011162830A (ja) プラズマｃｖｄによる成膜方法、成膜済基板および成膜装置
KR101028416B1 (ko) 박막 제조 방법 및 박막 제조 장치
Ohmagari et al. Growth and characterization of freestanding p+ diamond (100) substrates prepared by hot-filament chemical vapor deposition
Roca i Cabarrocas New approaches for the production of nano‐, micro‐, and polycrystalline silicon thin films
RU2258764C1 (ru) Способ и устройство для осаждения по меньшей мере частично кристаллического кремниевого слоя на подложку
JP6815016B2 (ja) アモルファスカーボンナノ粒子の製造方法及びアモルファスカーボンナノ粒子
KR100846718B1 (ko) 바이어스를 이용한 막 증착 방법
US20210222300A1 (en) Substrate processing apparatus, material layer deposition apparatus, and atmospheric pressure chemical vapor deposition apparatus
Lee et al. Effect of bipolar charging of SiH 4 on the growth rate and crystallinity of silicon films grown in the atmospheric pressure chemical vapor deposition process
AU2002253725A1 (en) Process and device for the deposition of an at least partially crystalline silicium layer on a substrate
JP2001279455A (ja) 堆積膜形成方法及び堆積膜形成装置
KR100875712B1 (ko) 전기장을 이용한 막 증착 장치 및 막 증착 방법
Yang et al. The field emission characteristics of titanium-doped nano-diamonds
Rostalsky et al. High rate deposition and electron beam recrystallization of silicon films for solar cells
Song et al. Non-uniform deposition in the early stage of hot-wire chemical vapor deposition of silicon: The charge effect approach
JP2002141292A (ja) シリコン系薄膜の製造法
KR20110011003A (ko) 전계제어장치를 구비한 열선 화학기상 증착장치 및 그를 이용한 박막 제조방법
Song et al. Effect of negatively charged species on the growth behavior of silicon films in hot wire chemical vapor deposition
US9102541B2 (en) Carbon material covered with diamond thin film and method of manufacturing same
JPH02119126A (ja) 半導体装置作製方法
JPS6191010A (ja) 堆積膜形成法
Cho et al. Field emission from carbon nanotubes etched by a dc plasma

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07808099

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 12440304

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07808099

Country of ref document: EP

Kind code of ref document: A1