WO2008023716A1 - Substrat de transfert pour dispositif d'affichage à électroluminescence organique - Google Patents

Substrat de transfert pour dispositif d'affichage à électroluminescence organique Download PDF

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Publication number
WO2008023716A1
WO2008023716A1 PCT/JP2007/066223 JP2007066223W WO2008023716A1 WO 2008023716 A1 WO2008023716 A1 WO 2008023716A1 JP 2007066223 W JP2007066223 W JP 2007066223W WO 2008023716 A1 WO2008023716 A1 WO 2008023716A1
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organic
layer
transfer
substrate
display element
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PCT/JP2007/066223
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English (en)
Japanese (ja)
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Masahiko Fukuda
Satoshi Hachiya
Mitsuru Eida
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Idemitsu Kosan Co., Ltd.
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Publication of WO2008023716A1 publication Critical patent/WO2008023716A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

Definitions

  • the present invention relates to an organic electoluminescence (EU display element transfer substrate. More specifically, the present invention relates to an organic EL display element transfer substrate in which a composition containing semiconductor nanocrystals is formed as a transfer layer.
  • the patterning method of luminescent materials used in the manufacture of organic EL display devices has been a vacuum deposition method.
  • the luminescent material is evaporated by resistance heating and deposited on the substrate through a shadow mask.
  • the shadow mask is made of a thin metal plate with a thickness of several tens of meters, and it is necessary to further reduce the thickness of the metal plate in order to achieve high definition.
  • a method of manufacturing a full-color organic light-emitting device by a transfer method is regarded as promising as a mass-production technology.
  • the transfer method is a method in which energy is irradiated onto a donor substrate on which a material to be transferred is formed, and the material is moved to the image receiving substrate side due to a difference in material properties between an irradiated portion and a non-irradiated portion.
  • a method using laser light is known as LITI (Laser induced thermal imaging).
  • LITI Laser induced thermal imaging
  • RGB three-color luminescent material patterning
  • transfer methods along with wet coating methods such as inkjet and printing.
  • photolithography and inkjet for patterning of the colored layer, which is a filter material.
  • a laser beam is absorbed on a base substrate, and a light-to-heat conversion layer that converts the light energy into heat energy is transferred.
  • a layered structure composed of materials is fundamental.
  • As a transfer mechanism there are a vaporization (sublimation or evaporation) type and a hot melt fixing type.
  • a low-molecular-weight light emitting material is mainly formed on the transfer layer by vacuum deposition, and the light emitting material is vaporized (sublimated or evaporated) by heating at the location where the laser is irradiated. Transferred (Patent Document 1). Further, the invention of a donor substrate exhibiting high light absorption ability is disclosed (Patent Document 2).
  • the hot melt fixing type is used for the transfer of polymer light emitting materials without vaporizing (sublimation or evaporation)!
  • a donor substrate having a transfer material layer and a receptor substrate are bonded to each other, and a laser beam is irradiated to a portion to be transferred, thereby thermally welding the transfer material and the receptor substrate.
  • separation occurs between the transfer material of the laser irradiation part and the non-irradiation part, and the irradiation part is transferred to the receptor substrate (Patent Documents 3-5).
  • This technology is an application of laser transfer technology as a technology for forming colored layers on organic EL display elements.
  • Semiconductor nanocrystals produce an electron confinement effect (quantum size effect) and develop specific physical properties (light absorption and emission ability) by making semiconductors into ultrafine particles ( ⁇ ;! Onm). For example, the following features are mentioned. (1) Since it is an inorganic material, it is stable to heat and light and highly durable.
  • Non-patent Documents 1 and 2, Patent Document 7 As an application of semiconductor nanocrystals to organic EL display elements, organic EL display elements using semiconductor nanocrystals as dopant light-emitting materials have been disclosed (Non-patent Documents 1 and 2, Patent Document 7).
  • a hole transport material and a semiconductor nanocrystal are dissolved in a solvent, and a film is formed by a spin coating method to produce a light emitting element.
  • the hole transport material and the semiconductor nanocrystal are phase-separated in the drying process, and the semiconductor nanocrystal forms a layer structure on the film surface.
  • Patent Document 8 discloses an electroluminescent element using a semiconductor nanocrystal as a light emitting layer.
  • Conductor nanocrystals were prepared by spin-coating (wet coating method) a 1: 1 mixture of poly (ethylenedioxythiophene) / poly (styrene sulfonate) and poly-N-bulur rubazole at atmospheric pressure on an anode made of ITO.
  • CdSe-ZnS is similarly deposited by spin coating in the atmosphere, and after that, an electron transport layer and a cathode are deposited thereon by vacuum deposition to produce an electroluminescent device.
  • Non-Patent Document 2 a hole transport material and a semiconductor nanocrystal solution are spin-coated to form a hole transport layer and a light emitting layer. Since the semiconductor nanocrystal layer is formed by a wet coating method, it is a process in which film formation in the atmosphere and in a vacuum is mixed.
  • semiconductor nanocrystals are materials having a large molecular weight, and the dispersion liquid is obtained by adding a polar material (resin having a functional group such as an electrolyte) or changing the environment (temperature, humidity). There was a problem that crystal aggregation occurred and the long-term storage stability was poor.
  • Patent Document 1 Japanese Patent Laid-Open No. 2003-229258
  • Patent Document 2 Japanese Patent Publication No. 2004-288636
  • Patent Document 3 Japanese Translation of Special Publication 2005-500652
  • Patent Document 4 Japanese Unexamined Patent Application Publication No. 2004-200170
  • Patent Document 5 Japanese Unexamined Patent Application Publication No. 2005-158750
  • Patent Document 6 Japanese Unexamined Patent Publication No. 2005-100939
  • Patent Document 7 Special Table 2005-522005
  • Patent Document 8 Japanese Patent Application Laid-Open No. 2004-303592
  • Non-Patent Document 1 Organic Electronics, 4, 123—30 (2003)
  • Non-Patent Document 2 Adv. Funct. Mater., 15, 1117-20 (2005)
  • the present invention has been made in view of the above-described problems, and is excellent in storage stability of semiconductor nanocrystals, facilitates patterning to a receptor substrate (transfer target substrate), improves the performance of organic EL elements, and
  • the object is to provide a transfer substrate for an organic EL display element that enables mass production.
  • the following transfer substrate for organic EL display elements is provided.
  • a transfer substrate for an organic electoluminescence display element comprising a base substrate, a light-to-heat conversion layer, and a transfer layer laminated in this order, wherein the transfer layer contains semiconductor nanocrystals.
  • the semiconductor nanocrystal is a core / shell type semiconductor nanocrystal composed of a core particle made of a semiconductor and a shell layer made of a second semiconductor material having a larger band gap than the semiconductor material used for the core particle.
  • transfer substrate for an organic electoluminescence display element according to any one of 1 to 3, wherein the transfer layer includes a semiconductor nanocrystal coordinated with an organic ligand and a low-molecular organic material.
  • Device transfer substrate 6.
  • the transfer substrate for an organic electoluminescence display device comprising semiconductor nanocrystals each having a red, green, and blue pattern, each pattern emitting light of each color.
  • Organic electroluminescence display device manufactured by using the organic electroluminescence display device transfer substrate according to 1 to 10 above, or any of the above.
  • an organic EL that is excellent in storage stability of semiconductor nanocrystals, facilitates notching to a receptor substrate, and improves the performance of an organic EL element, in particular, enables long life and mass production.
  • a transfer substrate for a display element can be provided.
  • FIG. 1 is a schematic cross-sectional view showing a transfer substrate for an organic EL display device of the present invention.
  • FIG. 2 is a diagram showing a transfer method using a transfer substrate for an organic EL display element, where (a) shows a state during light irradiation and (b) shows a state after peeling.
  • FIG. 3 is a schematic cross-sectional view showing a transfer substrate for an organic EL display element according to Embodiment 1 of the present invention.
  • FIG. 4 is a diagram showing a transfer method according to Embodiment 1, wherein ⁇ shows a state during light irradiation, and (b) shows a state after peeling.
  • FIG. 5 is a schematic sectional view showing an organic EL display element transfer substrate according to Embodiment 2 of the present invention.
  • FIG. 6 is a diagram showing a transfer method according to Embodiment 2, where ⁇ shows a state during light irradiation, and (b) shows a state after peeling.
  • FIG. 7 is a schematic sectional view showing an organic EL display element transfer substrate according to Embodiment 3 of the present invention.
  • FIG. 8 is a view showing a method for producing an organic EL display device using the transfer substrate of the present invention, wherein (a) shows a state during light irradiation, and (b) shows a state after peeling.
  • FIG. 1 is a schematic cross-sectional view showing a transfer substrate for an organic EL display element of the present invention.
  • the transfer substrate 1 for an organic EL display element has a structure in which a base substrate 10, a light-to-heat conversion layer 20, and a transfer layer 30 are laminated in this order.
  • the base substrate 10 is a support member for forming each layer of the transfer substrate, and has transparency to transmit light energy.
  • the light-to-heat conversion layer 20 has a function of absorbing light (for example, laser light) and efficiently converting it into heat.
  • the transfer layer 30 is a layer containing semiconductor nanocrystals, and is a layer that is transferred to a receptor substrate or the like described later.
  • FIG. 2 is a diagram showing a transfer method using a transfer substrate for an organic EL display element.
  • the receptor substrate 40 and the transfer substrate 1 of the present invention are overlapped, and light (for example, laser light) is irradiated from the outside.
  • the irradiated light is converted into heat by the light-to-heat conversion layer 20, and the material is transferred from the transfer layer 30 to the receptor substrate 40 by the generated heat.
  • a laminate of the transfer layer 30 and the receptor substrate 40 shown in FIG. 2 (b) is obtained.
  • the receptor substrate 40 which is a transfer substrate, includes a transparent substrate, a support substrate for an organic EL element, a support substrate for an organic EL element on which an electrode is formed, and an organic EL in which an organic layer is formed on the electrode.
  • the transfer layer 30 containing semiconductor nanocrystals is used for hole injection on the transfer destination substrate or on the organic EL element.
  • ⁇ Functions as a component layer of organic EL elements such as a transport layer, an electron transport layer, and a light emitting layer, and as a color conversion medium layer (color conversion film).
  • Embodiment 1 Transfer Substrate for Filter Material
  • FIG. 3 is a schematic cross-sectional view showing a transfer substrate for an organic EL display element according to Embodiment 1 of the present invention.
  • the present embodiment is an example in which the transfer layer 30 becomes a color conversion medium layer that absorbs light emitted from the organic EL element and emits fluorescence at the transfer destination.
  • the transfer layer 30 has a laminated structure of a color filter 32 and a color conversion medium layer 34 containing semiconductor nanocrystals. By transferring this to the light extraction side of the organic EL element, a color conversion unit that converts and adjusts the light of the organic EL element can be formed.
  • the transfer layer 30 may be composed of a single color conversion medium layer containing semiconductor nanocrystals.
  • FIG. 4 is a diagram showing a transfer method according to Embodiment 1, wherein (a) shows a state during light irradiation, and (b) shows a state after peeling.
  • the receptor substrate 40 and the transfer substrate 2 are brought into close contact with each other, and light (for example, laser light) is irradiated from the outside.
  • the irradiated light is converted into heat by the light-to-heat conversion layer 20, and the transfer layer 30 and the receptor substrate 40 are thermally welded by the generated heat.
  • the transfer substrate 2 is peeled off, the color conversion medium layer 34 and the color filter 32 are laminated on the receptor substrate 40 shown in FIG. 2 (b) because the peeling occurs at the interface between the light-heat conversion layer 20 and the transfer layer 30.
  • a color conversion substrate (filter substrate) is obtained.
  • the receptor substrate a commonly used glass substrate, resin substrate, organic EL element or the like is used.
  • Embodiment 2 Transfer Substrate for Luminescent Material
  • FIG. 5 is a schematic cross-sectional view showing a transfer substrate for an organic EL display element according to Embodiment 2 of the present invention.
  • the transfer layer 30 is a constituent layer of the organic EL element at the transfer destination.
  • the transfer layer 30 has a laminated structure of a low-molecular organic material layer 38 and a semiconductor nanocrystal layer 36 (shown as NC layer in the figure).
  • a semiconductor nanocrystal layer 36 shown as NC layer in the figure.
  • an organic EL device can be produced by transferring the transfer layer onto the hole transport layer of the organic EL device.
  • FIG. 6 is a view showing a transfer method according to Embodiment 2, wherein (a) shows a state during light irradiation, and (b) shows a state after peeling.
  • a receptor substrate 40 having a hole injection layer / hole transport layer 46 formed on a glass substrate 42, which is a support substrate on which an ITO film 44 is formed is used.
  • the transfer substrate 30 is brought into close contact, and light (for example, laser light) is irradiated from the outside.
  • the irradiated light is converted into heat by the light-to-heat conversion layer 20, and the generated heat sublimates the low molecular weight organic material layer 38 (electron transport layer) of the transfer layer 30.
  • Layer 36 transfers to the receptor substrate 40. Thereby, a laminate of the transfer layer 30 and the receptor substrate 40 shown in FIG. 6 (b) is obtained.
  • an organic EL display element is produced by forming a cathode metal thereon.
  • the transfer layer 30 is formed by separately coating or vapor-depositing semiconductor nanocrystals and low-molecular organic materials. Alternatively, two layers can be formed by applying a mixed solution followed by phase separation.
  • FIG. 7 is a schematic sectional view showing an organic EL display element transfer substrate according to Embodiment 3 of the present invention.
  • the transfer layer 30 ′ is pre-patterned into a red pattern R, a green pattern G, and a blue pattern B. In this way, by patterning the transfer layer in advance, an organic EL display device can be manufactured in a single transfer process.
  • the transfer sheet on which the pixel pattern is formed may be manufactured using any known method.
  • the filter material described in Embodiment 1 and the light-emitting material described in Embodiment 2 are applied.
  • the base substrate is a support member for forming each layer of the transfer substrate, and needs to have transparency in order to transmit light energy.
  • an inorganic material such as glass or a high molecular material is used.
  • polymer material examples include polycarbonate resin, acrylic resin, butyl chloride resin, polyethylene terephthalate resin, polyimide resin, polyester resin, epoxy resin, phenol resin, silicon resin, fluorine resin, and polyether sulfone resin. It is done.
  • the base substrate of the present invention is preferably glass or a polyimide resin sheet from the viewpoint of dimensional stability.
  • the thickness of the base substrate is usually within a range of 10 to; 1000 m, preferably within a range of 50 to 700 m. If it is thinner than the above range, cracks and the like may occur, and if it is thicker, operability may be difficult.
  • the light-to-heat conversion layer is a layer that absorbs light and converts it into heat.
  • the light-to-heat conversion layer is made of a material having a function of absorbing light (for example, laser light) and efficiently converting it into heat, and examples thereof include the following metal films and organic films.
  • metal film materials include Ag, Al, Au, Be, Co, Cr, Cu, Fe, Ir, Mo, Nb, Ni, Pt, Rh, Ta, Ti, Pd, V, and W. These may be used alone or as two or more alloys.
  • Examples of the method for producing a light-to-heat conversion layer using a metal film include vacuum deposition, electron beam deposition, and sputtering, and the film thickness is usually 100 to 5000A.
  • an antireflection film is preferably provided between the base substrate and the light-to-heat conversion layer in order to enhance light absorption.
  • the antireflection film examples include metal oxides or sulfides mentioned as the metal film material.
  • a material having a refractive index of 3 or more is preferable.
  • Japanese Patent Application Laid-Open No. 2004-134356, Japanese Patent Application Laid-Open No. 10-270165, and Japanese Patent Application Laid-Open No. 9-3643 can be referred to. [0032] (2) Organic film
  • Examples of the material for the organic film include an organic film in which carbon black, graphite, or an infrared absorbing dye is dispersed.
  • Examples of the method for producing a light-heat conversion layer using an organic film include resin coating (spin, knife, die), and the film thickness is usually from 0.;! To 10 m.
  • Examples of light sources suitable for heat conversion in the light-to-heat conversion layer include lasers (solid lasers, semiconductor lasers, dye lasers, etc.), xenon lamps, flash lamps, and the like.
  • the thickness of the light-to-heat conversion layer is usually 0 ⁇ 1-100, ⁇ , preferably 1-10111.
  • the transfer layer of the present invention has a layer containing semiconductor nanocrystals.
  • the semiconductor nanocrystal functions as a color conversion material in the color conversion medium layer of the organic EL element, as a dopant such as a hole injection / transport layer, and as a light emitting layer.
  • Semiconductor nanocrystals are crystals of semiconductor materials made into ultrafine particles down to the nanometer order. They can absorb ultra-fine particles that absorb visible light and emit longer-wavelength fluorescence than the absorbed light. In order to efficiently absorb visible light without scattering and emit fluorescence, a particle having a particle size of 20 nm or less, more preferably 10 nm or less, is preferably used.
  • the transfer layer is a solid film containing semiconductor nanocrystals, the semiconductor nanocrystals do not agglomerate!
  • the band gap of the semiconductor nanocrystal Balta semiconductor is preferably in the range of 1.0 eV to 3. OeV. 1. Below OeV, when nanocrystallized, the fluorescence wavelength is sensitively shifted with respect to the change in particle size, which is not preferable in terms of the difficulty in managing nanocrystals. Further, if it exceeds 3. OeV, only fluorescence having a shorter wavelength than the near ultraviolet region can be emitted, which is not preferable because it is not suitable for application as a color light emitting device.
  • the band gap of Balta semiconductor is the value obtained from the photon energy corresponding to the wavelength at which the absorption coefficient rises greatly when optical absorption measurement of Balta semiconductor sample is performed at 20 ° C.
  • Semiconductor materials include crystals composed of Group 14 elements, Group 2 elements, Group 16 elements compounds, Group 12 elements, Group 16 elements compounds, Group 13 elements, Group 15 elements compounds of the periodic table. Monkey.
  • Specific white materials include Si, Ge, MgS, ZnS, MgSe, ZnSe, A1P, GaP, AlAs, GaAs, CdS, CdSe, InP, In As, GaSb, AlSb, ZnTe, CdTe, InSb, etc. And mixed crystal crystals composed of these elements or compounds.
  • Also, A1P, GaP, Si, ZnSe, AlAs, GaAs, CdSe, InP, ZnTe, AlSb, Cd Te can be mentioned, among them, direct transition semiconductors such as ZnSe, GaAs, CdSe, InP, ZnTe and CdTe are particularly preferable in terms of high luminous efficiency.
  • Nanocrystals of a semiconductor material can be produced by a known method, for example, a method described in US Patent 6,501,091.
  • trioctylphosphine oxide (TOPO) heated to 350 ° C is mixed with a precursor solution in which trioctylphosphine (TOP) is mixed with trioctylphosphine selenide and dimethylcadmium. There is a way to do it.
  • the semiconductor nanocrystal used in the present invention is preferably a core / shell type semiconductor nanotalaristal.
  • This has a structure in which the surface of a core fine particle made of, for example, CdSe (band gap: 1.74 eV) is covered with a shell of a semiconductor material having a large band gap, such as ZnS (band gap: 3.8 eV). This facilitates the confinement effect of electrons generated in the core fine particles.
  • the core / shell type semiconductor nanocrystal can be produced by a known method, for example, the method described in US Pat. No. 6,501,091.
  • a CdSe core / ZnS shell structure it can be manufactured by adding a precursor solution in which JETLE zinc and trimethylsilyl sulfide are mixed with TOP into a TOPO liquid in which CdSe core particles are dispersed and heated to 140 ° C. .
  • the semiconductor nanocrystal described above S, Se, and the like are extracted by an active component (unreacted monomer, moisture, etc.) in the transparent medium, which will be described later, and the crystal structure of the nanocrystal is broken, resulting in fluorescence. The phenomenon that disappears easily occurs. In order to prevent this, the surface may be modified with a metal oxide such as silica! /.
  • the semiconductor nanocrystals may be used alone or in combination of two or more.
  • Preferred embodiments of the transfer layer of the present invention include the following constitutions.
  • a layer comprising a composition comprising a semiconductor nanocrystal coordinated with an organic ligand and a low-molecular organic material
  • a layer made of a composition comprising a semiconductor nanocrystal coordinated with an organic ligand and a resin
  • Semiconductor nanocrystals are used for improving dispersibility in solvents and improving compatibility with resin components.
  • the surface is preferably modified with an organic ligand having a coordinating functional group, and used as a semiconductor nanocrystal in which the organic ligand is coordinated.
  • the configuration (1) is mainly used when a semiconductor nanocrystal layer is formed between the color conversion medium layer of the organic EL element and the electrodes of the organic EL element.
  • Examples of the coordinating functional group include a functional group containing a group 15 or 16 element of the periodic table. Specific examples include a primary amino group (one NH), a secondary amino group (one NHR; where R is a methyl group). , Ethyl group,
  • hydrocarbon group having 6 or less carbon atoms such as a pill group, butyl group, and phenyl group; the same applies hereinafter.
  • Tertiary amino group (—NR 2 ; where R 1 and R 2 are independently methyl group, ethyl group, propyl group)
  • a hydrocarbon group having 6 or less carbon atoms such as a group, a butyl group and a phenyl group; the same shall apply hereinafter
  • a functional group having a nitrogen-containing multiple bond such as a nitrile group or an isocyanate group, or a nitrogen-containing group such as a pyridine ring or a triazine ring.
  • Nitrogen-containing functional groups such as aromatic rings, primary phosphine groups (one PH), secondary phosphines
  • Sulfur-containing functional groups such as thioic acid group (one COSH), dithioic acid group (one CSSH), xanthate group, xanthate group, isothiocyanate group, thiocarbamate group, thiophene ring, etc.
  • thioic acid group one COSH
  • dithioic acid group one CSSH
  • xanthate group xanthate group
  • isothiocyanate group thiocarbamate group
  • thiophene ring etc.
  • peripheral groups such as phosphorus-containing functional groups such as nitrogen-containing functional groups such as pyridine rings, tertiary phosphine groups, tertiary phosphine oxide groups, and tertiary phosphine selenide groups are preferably used.
  • the low molecular weight organic material in the composition of (2) above has a molecular weight of 100 to 2000, and is used for a hole injection transport layer, a light emitting layer, an electron injection transport layer, etc., which are constituent layers of the organic EL element. It means the organic material used. It is also possible to separately form semiconductor nanotalisters in which these organic materials and organic ligands are coordinated. Moreover, after mixing and forming a film, the layers can be separated into two layers. A semiconductor nanocrystal layer is formed as the light emitting layer.
  • the low molecular weight organic material to be transferred is determined by the configuration of the receptor substrate.
  • the transfer substrate is a photothermal conversion layer, an electron transport layer on the base substrate. Since the materials and semiconductor nanocrystals are formed in this order, the low molecular weight organic material becomes the electron transport layer material. If the configuration of the organic EL element is reversed, the low-molecular organic material is the hole transport layer material.
  • the organic EL element has a configuration in which a light emitting layer is sandwiched between two electrodes.
  • the light emitting layer emits light by applying a voltage between the electrodes.
  • the basic structure of the organic EL element is the first electrode / organic light emitting medium / second electrode.
  • An organic light emitting medium can be defined as a medium including an organic light emitting layer capable of EL emission by recombination of electrons and holes.
  • the organic light-emitting medium can be configured by laminating the following layers on the first electrode. (i) Organic light emitting layer
  • (iv) and (vi) are preferably used because they have a constitutional power S, higher emission luminance, and excellent durability.
  • the low molecular weight organic material that forms each of these layers can be used for the transfer layer.
  • the material of the electron transport layer 1 X 10 4 ⁇ 1 electron mobility measured when a voltage in the range of X 10 6 V / cm was applied, 1 X 10- 6 cm 2 / V ' or more seconds It is preferable to use a compound having an ionization energy exceeding 5.5 eV.
  • an electron transport layer material include tris (8-hydroxyquinolinate) aluminum (Alq)) or a derivative thereof, or an oxadiazole derivative, which is a metal complex of 8-hydroxyquinoline.
  • the constituent material of the hole injection layer a hole mobility measured when applying a voltage in the range of 1 X 10 4 ⁇ 1 X 10 6 V / cm is, 1 X 10- 6 cm 2 / V ' It is preferable to use a compound having an ionization energy of 5.5 eV or less for at least 2 seconds.
  • constituent material of such a hole injection layer include porphyrin compounds, aromatic tertiary amine compounds, styrylamine compounds, aromatic dimethylidin compounds, condensed aromatic ring compounds such as 4 , 4, 1 bis [N— (1 naphthyl) N phenylamino] biphenyl (abbreviated as NPD), 4, 4 ', 4 "tris [N— (3-methylphenyl) N— Organic compounds such as [phenylamino] triphenylamine (abbreviated as MTDATA).
  • an inorganic compound such as p-type Si or p-type SiC as the constituent material of the hole injection layer.
  • the hole transport layer is preferably a material that transports holes to the light emitting layer with lower electric field strength. Immediate Chi, hole mobility hole mobility is measured when applying a voltage in the range of 1 X 10 4 ⁇ 1 X 10 6 V / cm is, 1 X 10_ 4 cm 2 / V. Seconds It is preferable that
  • a photoconductive material is generally used as a charge transport material for a hole or a well-known material used for a hole transport layer of an EL element. You can select and use any of the intermediate forces.
  • Specific examples include triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives and pyrazolone derivatives, phenyl diamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, silazane derivatives, polysilane derivatives, Examples thereof include aniline-based copolymers and conductive polymer oligomers (thiophene oligomers).
  • the hole transport layer may be composed of one or more layers made of the above materials. Also, a hole transport layer made of another kind of compound may be laminated.
  • the composition comprising the semiconductor nanocrystal and the resin coordinated with the organic ligand (3) can be used mainly as a color conversion medium.
  • the resin is for dispersing semiconductor nanocrystals, and is preferably a thermosetting resin.
  • this is a compound that uses a mixture of low-molecular monomers and has a suitable viscosity as a raw material, and forms a network structure when heated and cures in an insoluble and infusible state. It is a urea compound, melamine compound, phenol.
  • Compounds, epoxy compounds, unsaturated polyester compounds, alkyd compounds, urethane compounds and the like can be mentioned, and epoxy compounds are preferably used.
  • the epoxy compound for example, those having two or more functional groups can be used.
  • the curing agent used for the epoxy compound is not particularly limited, and various curing agents such as an amine compound, an amide compound, an acid anhydride compound, and a phenol compound can be used. Amamine compounds, acid anhydride compounds, and polyamide compounds are used.
  • Amine compounds include diaminodiphenylmethane, diethylenetriamine, triethylenetetramine, diaminodiphenylsulfone, isophoronediamine, imidazo monole, BF -amino
  • Amide compounds include dicyandiamide, polyamide resin synthesized from linolenic acid dimer and ethylenediamine, etc .
  • acid anhydride compounds include phthalic anhydride, Trimellitic anhydride, pyromellitic anhydride, maleic anhydride, tetrahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methyl naphthalate
  • phenolic compounds such as phenolic nopolac resin, cresol nopolac resin, aromatic hydrocarbon formaldehyde resin-modified phenolic resin, dicyclopentadiene phenic acid, hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, etc.
  • Enol addition type resin phenol aralkyl resin (commonly known as zylock resin), naphthol aralkyl resin, trimethylol methane resin, tetraphenol ethane resin, naphthol nopolac resin, naphthol phenol co-condensed nopolac resin, naphthol-cresol co-condensed nopolac resin
  • Biphenyl-modified phenolic resin polyhydric phenol compound with phenolic nucleus linked by bismethylene group
  • Biphenyl-modified naphthol resin phenolic nucleus linked by bismethylene group
  • Valent naphthol compounds aminotriazine-modified phenol resins (polyvalent phenol compounds in which phenol nuclei are linked by melamine, benzoguanamine, etc.), and modified products thereof. It is not limited. These may be used alone or in combination of two or more.
  • the compounding amount of the curing agent in the epoxy resin composition is not particularly limited, but it is used together with the epoxy resin and if necessary from the viewpoint of good mechanical properties of the resulting cured product.
  • the amount of active groups in the hardener is 0.7 to 1.5 equivalents with respect to a total of 1 equivalent of epoxy groups with other epoxy resins.
  • the transfer layer functions as a color conversion medium, in order to obtain a desired wavelength, as shown in FIG. 3, the transfer layer is composed of a semiconductor nanocrystal coordinated with an organic ligand and a resin. It is preferable that it is a laminated body of these layers and a color filter layer.
  • the color filter layer is a layer containing a color filter having a function of decomposing or cutting light to improve color adjustment or contrast.
  • Examples of the material for the color filter include the following dyes or those in a solid state in which the dye is dissolved or dispersed in a binder resin.
  • Red (R) dye [0061] Red (R) dye:
  • Perylene pigments lake pigments, azo pigments, quinacridone pigments, anthraquinone pigments, anthracene pigments, isoindoline pigments, isoindolinone pigments, diketopyrrolopyrrole pigments, and at least two or more Can be used.
  • Green (G) dye Single and at least two types of pigments, such as poly (R), rogen poly-substituted phthalocyanine pigments, tri-, ro-gen poly-substituted copper phthalocyanine pigments, triphenylmethane basic dyes, azo pigments, isoindoline pigments, isoindolinone pigments Mixtures of the above can be used.
  • a single product such as a copper phthalocyanine pigment, an indanthrone pigment, an indophenol pigment, a cyanine pigment, a dioxazine pigment, or a mixture of at least two of them can be used.
  • the binder resin for the material of the color filter it is preferable to use a transparent material (with a transmittance of 50% or more in the visible light region).
  • transparent resins polymers
  • polymers such as polymethylmetatalylate, polytalariate, polycarbonate, polybulal alcohol, polybulurpyrrolidone, hydroxyethyl cellulose, carboxymethylcellulose, and the like, one or more of these Mixed use is possible.
  • the thickness of the color filter layer is not particularly limited, but is, for example, a force S of 10 nm to l, 0 00 ⁇ m, preferably a force S of 0.5 m to 500 ⁇ m S More preferably, it is more preferably 1 ⁇ m to l 00, im! /.
  • the thickness of the transfer layer varies depending on the function of the transfer layer, and may be adjusted as appropriate.
  • a release layer composed of a single layer or a plurality of layers, which facilitates release of the transfer layer, may be formed.
  • the material used for the release layer include a silicone resin-based material and a long-chain alkyl pendant-type graft polymer-based material, and a silicone resin-based material is preferable.
  • the thickness of the release layer is not particularly limited, but is usually 0.1-lOO ⁇ m, preferably 1 to 10 m.
  • an improvement layer for improving adhesion to the receptor side a heat conduction layer for efficiently transferring heat from the light-to-heat conversion layer to the transfer layer, or the like may be formed.
  • the transfer substrate for organic EL display elements of the present invention can be obtained by laminating the above-described layers on a base substrate.
  • a lamination method for forming each layer there are a coating method and a printing method. If it is a coating method, it is possible to use spin coating, roll coating, date bubbling, spraying, etc.
  • a screen, a gravure, a flexo, a letterpress, an intaglio, etc. can be used as long as it is a printing method.
  • a sublimable material such as a low molecular organic material is included, a vapor deposition method can be applied.
  • An organic EL display element can be produced by transferring a transfer layer to an organic EL element substrate using the transfer substrate for an organic EL display element of the present invention.
  • a transfer layer which is a color conversion medium layer, is transferred to a top-emission type organic EL element using a transfer substrate will be described.
  • FIG. 8 is a view showing a method for producing an organic EL display device using the transfer substrate of the present invention, where (a) shows a state during light irradiation and (b) shows a state after peeling.
  • the top emission type organic EL element substrate 50 usually has a structure in which a substrate 51, an organic EL element portion 52, and a sealing layer 53 are laminated in this order.
  • an organic layer including an organic light emitting layer is formed between a pair of electrodes.
  • the surface of the sealing layer 53 In order to improve the adhesiveness with the transfer layer 30 transferred from the transfer substrate 1, it is preferable to modify the surface of the sealing layer 53.
  • plasma treatment is preferable.
  • the plasma treatment can be performed using a known method.
  • the organic EL element substrate 50 and the transfer substrate 1 are brought into close contact so that the sealing layer 53 of the organic EL element substrate 50 and the transfer layer 30 of the transfer substrate 1 face each other (FIG. 8 (a)).
  • a known laminator such as a laminator or a vacuum laminator can be used.
  • an organic EL display element having a color conversion medium layer is obtained by irradiating light such as laser from the donor substrate side and transferring the transfer layer onto the sealing layer (FIG. 8 (b)).
  • the organic EL display element manufactured using the organic EL display element transfer substrate of the present invention can be mass-produced because it can be manufactured in a single transfer process. In addition, because it uses semiconductor nanocrystals, it has excellent performance in organic EL display elements, especially in life.
  • Cadmium acetate dihydrate 0.5 g
  • TDPA tetradecylphosphonic acid
  • TOP trioctylphosphine
  • Trioctylphosphine oxide (TOPO) (10 g) was placed in a three-necked flask and vacuum-dried at 195 ° C. for 1 hour. The atmosphere was returned to atmospheric pressure with nitrogen gas, heated to 270 ° C. in a nitrogen atmosphere, and 1.5 ml of the above raw material solution was added while stirring the system to perform a core growth reaction. The reaction proceeded while confirming the fluorescence spectrum of the reaction solution as needed. When the nanocrystal had a fluorescence peak at 615 nm, the reaction solution was cooled to 60 ° C. to stop the progress of the reaction.
  • TOPO Trioctylphosphine oxide
  • TOPO (5 g) was placed in a three-necked flask and vacuum-dried at 195 ° C for 1 hour. Return to atmospheric pressure with nitrogen gas, cool to 60 ° C in a nitrogen atmosphere, and suspend in TOP (0.5 ml) and 0.5 ml of hexane. ) Was added. After stirring at 100 ° C. for 1 hour under reduced pressure, the temperature was raised to 160 ° C., and the pressure was returned to atmospheric pressure with nitrogen gas to obtain Solution A. Separately prepared solution B (0.7 ml of 1N n-hexane solution of jetyl zinc and bis (trimethylsilyl) sulfide (0 ⁇ 13 g) dissolved in TOP3 ml) was kept at 160 ° C for 30 minutes.
  • the semiconductor nanocrystal grains The diameter was 5.2 nm for red, 4. Onm for green, and 3.5 nm for blue.
  • a 50 nm thick CrO film was formed on a lOOmmX 100 mm x 100 ⁇ m polyimide support film, and an lOOnm Cr metal film was further formed thereon.
  • This laminated film becomes a light-heat conversion layer.
  • the red color conversion material produced in Production Example 1 was formed into a film by a spin coating method at a rotational speed of 600 rpm so as to have a film thickness of 10 m (transfer layer).
  • the obtained laminate was dried in an oven at 80 ° C. for 15 minutes to obtain a transfer substrate.
  • a lOOmm X lOOmm X 1.1 mm non-alkali glass substrate was prepared as a receptor substrate.
  • the transfer layer of the transfer substrate prepared above was opposed to the receptor substrate, overlapped with the receptor substrate, and bonded through a laminator roll.
  • Laser irradiation was performed from the polyimide support film side using an Nd-YAG laser, and the laser beam was focused on the photothermal conversion layer using an f-theta scan lens.
  • the output was 16W and the laser spot size was 20 mX 300 am.
  • the transfer substrate and glass substrate were peeled off, and the irradiated part of the transfer layer was transferred to the receptor substrate side. Thereafter, the transferred film was heat-cured at 150 ° C. for 30 minutes to obtain a red color conversion film.
  • the red color conversion material produced in Production Example 1 was formed by spin coating at a rotation speed of 600 rpm so as to have a film thickness of 10 [Im].
  • the solvent was dried in an oven at 80 ° C for 15 minutes and then heat-cured at 150 ° C for 30 minutes to obtain a color conversion film.
  • a transfer substrate was produced in the same manner as in Example 1 except that the green color conversion material produced in Production Example 2 was used instead of the red color conversion material, and a green color conversion film was produced.
  • the color conversion film is superimposed on a blue organic EL device having a peak wavelength at 470 nm, and the spectrum of the transmitted light obtained through the color conversion film is measured in the field of view twice using a spectral luminance meter (CS 1000 manufactured by Minolta).
  • CS 1000 spectral luminance meter manufactured by Minolta
  • the luminance and chromaticity were calculated in consideration of the transmission through the color filters corresponding to red and green.
  • the color conversion efficiency was calculated by the following formula.
  • Color conversion efficiency Luminance of transmitted light that has passed through the color conversion film and color filter / Luminance of blue organic EL device
  • the measurement results are as follows. Stable performance was obtained by using a transfer substrate containing semiconductor nanocrystals.
  • thermosetting epoxy resin solvent methyl ethyl ketone
  • carbon black carbon black
  • poly ⁇ -methylstyrene acid was formed on the light-to-heat conversion layer by spin coating so that the film thickness was 1 ⁇ m, and a heat conduction layer was obtained.
  • red color filter As the material of the red color filter, a pair solids concentration, anthraquinone pigments (C. I. Pigment Red 177) 24 wt%, the ⁇ zone pigment (Ji. I. Pigment Yellow 6) 6 wt 0/0 A dispersed epoxy thermosetting ink (Seiko Advance 1300) was prepared. This ink was formed on the light-converting layer by screen printing, and a red color filter layer (film thickness: 2 Hm) was formed by treatment at 150 ° C. for 30 minutes.
  • the red color conversion material produced in Production Example 1 is formed on the red color filter layer by screen printing, and treated at 150 ° C for 30 minutes. (Film thickness 20, im) was formed. A red transfer substrate was obtained.
  • a green transfer substrate was prepared in the same manner except that the red color filter and red conversion material were changed to the following green materials in (1) above.
  • Halogenated copper phthalocyanine pigment (CI Pigment Green 36): 22.5 weight 0/0 ⁇ zone-based pigment (CI Pigment Yellow 83): 7. 5 wt 0/0
  • Copper phthalocyanine pigment (CI Pigment Green 15: 6): 28 weight 0/0,
  • Dioxane pigment (C.I. Pigment Violet 23): 2% by weight
  • a Si layer was laminated on a 12 mm X 143 mm X l. 1 mm glass substrate (OA2 glass, manufactured by Nippon Electric Glass Co., Ltd.) by a technique such as low pressure chemical vapor deposition (LPCVD).
  • excimer laser such as KrF (248 nm) laser was irradiated to the ⁇ Si layer to perform annealing crystallization to obtain polysilicon.
  • This polysilicon was patterned into an island shape by photolithography.
  • a gate oxide insulating layer was formed by laminating an insulating gate material by chemical vapor deposition (CVD) or the like on the surface of the obtained islanded polysilicon and the substrate.
  • a gate electrode was formed by vapor deposition or sputtering, and the gate electrode was patterned and anodized. Furthermore, a doped region was formed by ion doping (ion implantation), thereby forming an active layer, and a polysilicon TFT was formed as a source and a drain. At this time, the gate electrode was Al, and the TFT source and drain were n + type.
  • an interlayer insulating film (SiO 2) having a thickness of 500 nm is formed by CRCVD.
  • the signal electrode line and the common electrode line, the capacitor upper electrode (A1), the connection between the source electrode and the common electrode of the second transistor (Tr2), the drain of the first transistor (Trl) Connection with the signal electrode was performed.
  • Each TFT and each electrode were appropriately connected by opening the interlayer insulating film SiO by wet etching with hydrofluoric acid.
  • a negative resist (V259BK: manufactured by Nippon Steel Chemical Co., Ltd.) was spin-coated, exposed to ultraviolet light, and developed with a developer of TMAH (tetramethylammonium hydroxide).
  • TMAH tetramethylammonium hydroxide
  • beta was formed at 180 ° C to form an organic interlayer insulating film covering the edge of Cr / ITO (ITO opening was 70 m x 200 m).
  • the substrate with an interlayer insulating film thus obtained was subjected to ultrasonic cleaning in pure water and isopropyl alcohol, dried by air blow, and then UV cleaned.
  • the TFT substrate was moved to an organic vapor deposition device (manufactured by Nippon Vacuum Technology), and the substrate was fixed to the substrate holder.
  • MTDATA triphenylamine
  • NPD Bis [N— (1-Naphtyl) N phenylamino] biphenyl
  • DPVBi Bis (2, 2 diphenylbinole) biphenyl
  • DPAVB tris (8-hydroxyquinolinate) aluminum (Alq) and Li as the electron injection material and cathode, respectively, and cathode
  • an IZ 2 O (previous) target was attached to another sputtering vessel.
  • MTDATA is deposited at a deposition rate of 0.1 to 0.3 nm / second, and the film thickness is 6 Onm.
  • NPD is deposited at a deposition rate of 0.
  • DPVBi and DPAVB are deposited at a deposition rate of 0.0;!
  • deposition rate of 0.03 to 0.05 nm / second is co-deposited, and the film thickness is 50 nm.
  • Alq is deposited.
  • the substrate was moved to a sputtering vessel, and IZO was formed as a cathode take-out electrode at a film formation rate of 0.3;! To 0.3 nm / sec.
  • the surface of the sealing layer of the organic EL device on which the sealing layer was formed in B above was plasma-treated to form a receiving layer. Thereafter, the end of the red transfer substrate produced in A (l) above was aligned with the end on the organic EL element substrate, and was bonded using a laminator (pressure 10 kg / cm 2 , temperature 110
  • laser light (Nd-YAG, output 16W) was irradiated from the transparent support substrate side of the transfer substrate every 90 111 width and 240 m gap.
  • the transfer substrate was peeled off from the organic EL element substrate, and a red colored layer (red pattern) was formed on the organic EL element substrate.
  • a voltage of 7V DC is applied to the lower electrode (ITO / A1) and upper electrode take-out (ITO) (lower electrode)
  • Light emission, green phosphor layer / green color filter part (green pixel) 120cd / m 2 , CIE chromaticity coordinate is X 0
  • Example 3 Using the red color filter material and red conversion material of Example 3 on the support film, in the same manner as Example 3 in accordance with the TFT pattern of Example 3 by screen printing.
  • the green and blue pixels were formed in the same manner by shifting the pattern by 1 pitch on the support film. In this way, transfer substrates having red, green and blue patterns were produced.
  • the transfer layer was transferred to the surface of the sealing layer of the organic EL device, and red, green, and blue color conversion layers were collectively produced.
  • the obtained active organic EL display device was evaluated by the same method as in Example 3. As a result, the same evaluation result was obtained.
  • a semiconductor nanocrystal CdSe / ZnS-TOPO having a particle diameter of 5.2 nm prepared in Synthesis Example 1 was dissolved in 0.1 lg and 20 g of solvent chloroform to obtain a red light emitting material.
  • Production Example 4 Composition comprising semiconductor nanocrystal and low molecular weight organic material
  • the substrate was moved into a vapor deposition apparatus, and a film of 60 nm of tris (8-hydroxyquinolinate) aluminum (Alq), which is an electron transport layer material, was formed at a vapor deposition rate of 1 A / second.
  • the substrate is transferred to a spin coater table installed in a glove box in a nitrogen atmosphere connected to a vapor deposition device, and the red light emitting material produced in Production Example 3 is spin-coated at 1500 rpm for 20 seconds to produce a semiconductor nanocrystal.
  • a crystal film was prepared.
  • the film thickness of the semiconductor nanocrystal was about 6 nm.
  • the transfer chamber one linked to an organic EL device manufactured depositing apparatus for installing a transcription substrate prepared in the above was subjected to evacuate the vacuum until 5 X 10- 7 torr.
  • the substrate was transferred to a vapor deposition system, and MTDATA was vapor-deposited with a film thickness of 60 nm as a hole injection layer.
  • NPD NPD was deposited as a hole transport layer with a thickness of 20 nm. Thereafter, the substrate was transported to a transfer vacuum chamber and overlaid on the transfer substrate produced in the above-described process through a gap of 100 m.
  • the laser irradiation apparatus used in Example 1 was used for irradiation from the transfer substrate side. Alq material and semiconductor nanocrystal material were transferred to the organic EL device side. Sublimation transfer and entrainment of Alq material and semiconductor nanocrystal material transferred it is considered as.
  • Example 3 Thereafter, a sealing film was produced in the same manner as in Example 3 to produce an organic EL device.
  • a voltage of 5 V was applied between the upper and lower electrodes and a current was applied, an EL spectrum with a peak of 615 nm was obtained.
  • an organic EL display device was fabricated using a transfer substrate containing semiconductor nanocrystals.
  • Each layer of the hole transport layer of the organic EL device was prepared according to Example 5. Thereafter, the composition solution of the semiconductor nanocrystal and the low molecular weight organic material produced in Production Example 4 was spin-coated, but the underlying hole transport layer was dissolved, and the device could not be produced.
  • the organic EL display device that can be manufactured from the transfer substrate for the organic EL display element can be mass-produced, and can be used as a consumer or industrial display, such as a mobile phone, PDA, car navigation system, monitor, TV, etc. Useful.

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Abstract

Sont ici décrits un substrat de transfert (1) pour dispositif d'affichage à électroluminescence organique comprenant une base (10), une couche de conversion photothermique (20) et une couche de transfert (30) disposées selon cet ordre, la couche de transfert (30) contenant un nanocristal semi-conducteur de type cœur/coquille coordonné à un ligand organique. La couche de transfert (30) contient une matière organique de faible poids moléculaire, une résine thermodurcissable, un filtre couleur ou autre en plus du nanocristal semi-conducteur, et sert de couche constitutive ou de couche de support de conversion de couleur pour un dispositif d'EL organique lorsqu'elle est transférée à un substrat récepteur (40) par irradiation par lumière laser.
PCT/JP2007/066223 2006-08-25 2007-08-22 Substrat de transfert pour dispositif d'affichage à électroluminescence organique WO2008023716A1 (fr)

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Cited By (1)

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JP2019505946A (ja) * 2016-01-26 2019-02-28 京東方科技集團股▲ふん▼有限公司Ｂｏｅ Ｔｅｃｈｎｏｌｏｇｙ Ｇｒｏｕｐ Ｃｏ．，Ｌｔｄ． 量子ドット発光ダイオードサブピクセルアレイ、その製造方法及び表示装置

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JP2005079087A (ja) * 2003-08-28 2005-03-24 Samsung Sdi Co Ltd 平板表示素子用ドナーフィルム及びそれを利用した有機電界発光素子製造方法
WO2005051044A1 (fr) * 2003-11-18 2005-06-02 3M Innovative Properties Company Dispositifs electroluminescents et procedes de fabrication de tels dispositifs avec element de conversion de couleur
JP2005260221A (ja) * 2004-02-26 2005-09-22 Samsung Sdi Co Ltd ドナーシート、ドナーシートの製造方法、ドナーシートを利用した薄膜トランジスタの製造方法、及びドナーシートを利用した平板表示装置の製造方法
WO2005097939A1 (fr) * 2004-03-30 2005-10-20 Idemitsu Kosan Co., Ltd. Support de conversion fluorescent et dispositif électroluminescent de couleur

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JP2004303592A (ja) * 2003-03-31 2004-10-28 Mitsubishi Chemicals Corp 電界発光素子及び電界発光素子の製造方法
JP2005079087A (ja) * 2003-08-28 2005-03-24 Samsung Sdi Co Ltd 平板表示素子用ドナーフィルム及びそれを利用した有機電界発光素子製造方法
WO2005051044A1 (fr) * 2003-11-18 2005-06-02 3M Innovative Properties Company Dispositifs electroluminescents et procedes de fabrication de tels dispositifs avec element de conversion de couleur
JP2005260221A (ja) * 2004-02-26 2005-09-22 Samsung Sdi Co Ltd ドナーシート、ドナーシートの製造方法、ドナーシートを利用した薄膜トランジスタの製造方法、及びドナーシートを利用した平板表示装置の製造方法
WO2005097939A1 (fr) * 2004-03-30 2005-10-20 Idemitsu Kosan Co., Ltd. Support de conversion fluorescent et dispositif électroluminescent de couleur

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JP2019505946A (ja) * 2016-01-26 2019-02-28 京東方科技集團股▲ふん▼有限公司Ｂｏｅ Ｔｅｃｈｎｏｌｏｇｙ Ｇｒｏｕｐ Ｃｏ．，Ｌｔｄ． 量子ドット発光ダイオードサブピクセルアレイ、その製造方法及び表示装置
US10505115B2 (en) 2016-01-26 2019-12-10 Boe Technology Group Co., Ltd. Quantum dot light emitting diode subpixel array, method for manufacturing the same, and display device

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