WO2008018737A1 - Procédé de fabrication d'un élément flexible à l'aide d'un laser et élément flexible correspondant - Google Patents

Procédé de fabrication d'un élément flexible à l'aide d'un laser et élément flexible correspondant Download PDF

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Publication number
WO2008018737A1
WO2008018737A1 PCT/KR2007/003792 KR2007003792W WO2008018737A1 WO 2008018737 A1 WO2008018737 A1 WO 2008018737A1 KR 2007003792 W KR2007003792 W KR 2007003792W WO 2008018737 A1 WO2008018737 A1 WO 2008018737A1
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WO
WIPO (PCT)
Prior art keywords
layer
substrate
release layer
barrier layer
laser
Prior art date
Application number
PCT/KR2007/003792
Other languages
English (en)
Inventor
Jong Lam Lee
Soo Young Kim
Original Assignee
Pohang University Of Science And Technology
Postech Academy-Industry Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pohang University Of Science And Technology, Postech Academy-Industry Foundation filed Critical Pohang University Of Science And Technology
Publication of WO2008018737A1 publication Critical patent/WO2008018737A1/fr

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/87—Arrangements for heating or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates

Definitions

  • the present invention relates to a manufacturing method for a flexible element and the flexible element.
  • An organic light-emitting device has a laminated structure in order to obtain light- emitting efficiency as high as possible through electron-hole recombination.
  • [3] Glass is generally used as a material of a substrate.
  • Indium Tin Oxide (ITO) which is transparent and has a large work function and excellent conductivity, is used as a material of an anode.
  • Mg/ Ag or Al which has a low work function, is used as a material of a cathode.
  • the organic light-emitting device Since emitting light by itself, the organic light-emitting device has no problem with a viewing angle. For this reason, the organic light-emitting device can be used in small or large moving picture displays. Further, the organic light-emitting device has low power consumption, does not need a backlight, and can be manufactured at low temperature. Furthermore, since processes for manufacturing the organic light-emitting device are simple, it is possible to lower the price of the organic light-emitting device. Accordingly, it is advantageous to popularize the organic light-emitting device. In addition, since having possibility of being used as a flat panel display that is used to form a flexible display, the organic light-emitting device is in the limelight.
  • a-NPD 4'-bis [N-(l-naphtyl)-N-phenyl-amino] biphenyl
  • AIq tris( 8 -hydroxy quinoline) aluminum
  • Al may be used as a material of the cathode.
  • the above-mentioned method has a problem in that the thin film circuit layer may be damaged due to a large amount of gas generated from the release layer during the laser radiation. Further, since it is difficult to separate the amorphous silicon used as the material of the release layer, processes for attaching and detaching the provisional transfer substrate should be performed. For this reason, processes are complicated. As a result, productivity deteriorates and manufacturing cost is increased. In addition, the washing process is essential to perform the processes for attaching and detaching the provisional transfer substrate. Meanwhile, since an organic light-emitting device has a weak point against moisture, the above-mentioned process is not suitable for manufacturing an organic light-emitting device.
  • the present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a method of manufacturing a flexible element and a flexible element manufactured using the method.
  • the method prevents the deformation of a substrate caused by heat and chemicals during the manufacture of an element, easily aligns a substrate, significantly reduces manufacturing cost due to the fact that existing apparatuses are used without change of the apparatuses, and easily separate a release layer, so that processes thereof are simple.
  • a method of manufacturing a flexible element includes forming a patterned release layer on a hard substrate, forming an impurity barrier layer on the release layer, forming a transfer layer on the impurity barrier layer, attaching a plastic substrate to the transfer layer, and separating the hard substrate from the transfer layer, to which the plastic substrate is attached, by radiating laser onto the hard substrate to decompose and remove the release layer.
  • the patterned release layer is used to provide paths through which gas generated from the release layer during laser radiation is discharged to the outside. Therefore, it is possible to prevent cracks from occurring in the element during the separation. Since the method allows the transfer layer attached to the plastic substrate to be easily separated from the hard substrate, it is possible to more easily manufacture a flexible element in comparison with a conventional method.
  • transfer layer means a layer that excludes the plastic substrate and serves as the flexible element, and may be, for example, an organic light-emitting diode layer or an organic field-effect transistor layer.
  • the release layer may be preferably an oxide or a nitride that has a band gap smaller than energy corresponding to a wavelength of the laser.
  • a melting point of the residue may be preferably 15O 0 C or less.
  • the oxide or the nitride When laser is radiated onto the oxide or the nitride, the oxide or the nitride is thermally decomposed into metal and oxygen, or metal and nitrogen. In this case, the oxide or the nitride is separated from the substrate. For this reason, it is advantageous to use the oxide or the nitride as a material of the release layer. Further, if a melting point of the residue that is decomposed from the oxide or the nitride together with oxygen or nitrogen is higher than 15O 0 C, energy required to remove the release layer is increased, so that the plastic substrate attached to the transfer layer is deformed and cracks occur in the transfer layer due to heat. As a result, characteristics of the element may deteriorate.
  • any material may be used as a material of the release layer.
  • GaN, ITO, or GaO of which residue decomposed from the oxide or the nitride together with oxygen or nitrogen has a low melting point, may be preferably used as a material of the release layer. Since a melting point of gallium (Ga) is very low (29.78 0 C), GaN or GaO among them is easily melted even though laser having low energy is radiated. Therefore, it is possible to easily separate the transfer layer, to which the plastic substrate is attached, from the hard substrate without the damage of the transfer layer or the plastic substrate.
  • the method according to the aspect of the present invention is particularly suitable to form an element that has a weak point against moisture, such as an organic light-emitting diode, by using a flexible element.
  • the release layer be patterned to discharge gas generated during the decomposition of the release layer, and it is more preferable that the patterns have cell structures.
  • each of the cell structures have a size of 1 cm x 1 cm or less.
  • the reason for this is as follows: if each of the cell structures has a size of 1 cm x 1 cm or more, even though the release layer is patterned, it is not possible to sufficiently provide paths through which gas generated during the decomposition of the release layer is discharged to the outside. Accordingly, cracks may occur in the transfer layer.
  • a distance between patterns of the patterned release layer be 1 D or more in order to discharge gas generated during the decomposition of the release layer. It is more preferable that the distance between the patterns of the patterned release layer be 30 D or more. Further, if the distance between the patterns is excessively large, the cathode may be affected during the laser radiation. Accordingly, it is preferable that the distance between the patterns be 60 D or less.
  • the impurity barrier layer may be preferably made of an oxide, a nitride, or a mixture where an oxide and a nitride are alternately laminated.
  • the oxide be at least one selected from a group consisting of SiO, AlO, MgO, NiO, ZnO, TiO, CoO, BeO, RuO, IrO, and ZrO.
  • the nitride be at least one selected from a group consisting of SiN, BN, and AlN.
  • a heat barrier layer which is made of metal, such as Ag, Cu, Au, Al, W,
  • Rh, Ir, Mo, Ru, Zn, Co, Cd, Ni, Pd, or Pt may be formed on the impurity barrier layer, under the impurity barrier layer, or in the impurity barrier layer in order to prevent thermal diffusion.
  • Glass or quartz may be used as a material of the hard substrate.
  • gas laser such as ArF laser, KrCl laser, KrF laser, XeCl laser, or XeF laser, which has energy larger than a band gap of a material of the release layer
  • the energy of the laser may be preferably in the range that does not cause organic materials to be damaged and can cause laser separation. It is preferable that the wavelength of the laser be in the range of 200 to 400 nm.
  • another aspect of the present invention provides a flexible element that is manufactured by the above-mentioned method of manufacturing the flexible element.
  • a patterned release layer is formed on a glass substrate, a transfer layer is laminated on the release layer, a plastic substrate is attached, and the transfer layer is separated from the glass substrate at an interface therebetween by using laser, thereby manufacturing a flexible element. Accordingly, it is possible to obtain the following effects.
  • FIG. 1 is a cross-sectional view of a conventional organic light-emitting device, which is manufactured using a plastic substrate.
  • FIG. 2 is a cross-sectional view illustrating a method of manufacturing an organic light-emitting device according to a first embodiment of the present invention.
  • FIG. 3 is a cross-sectional view illustrating a method of manufacturing an organic light-emitting device according to a second embodiment of the present invention.
  • FIG. 4 is a cross-sectional view illustrating a method of manufacturing an organic light-emitting device according to a comparative example.
  • FIG. 5A is a cross-sectional view illustrating a method of testing the separation caused by laser radiation.
  • FIG. 40 is a cross-sectional view illustrating a method of testing the separation caused by laser radiation.
  • FIG. 5B is a view showing a result of a measurement that is performed on a portion of a transfer layer separated from a glass substrate by using an energy depressive X-ray after laser radiation.
  • FIG. 5C is a view showing a result of a measurement that is performed on a glass substrate separated from a portion of a transfer layer by using an energy dispersive X- ray after laser radiation.
  • FIG. 6A is a photograph, which is taken by an optical microscope, of a transfer layer manufactured by the method according to the first embodiment of the present invention.
  • FIG. 6B is a photograph, which is taken by an optical microscope, of a transfer layer manufactured by the method according to the second embodiment of the present invention.
  • FIG. 6A is a photograph, which is taken by an optical microscope, of a transfer layer manufactured by the method according to the first embodiment of the present invention.
  • FIG. 6B is a photograph, which is taken by an optical microscope, of a transfer layer manufactured by the method according to the second embodiment of the present invention.
  • FIG. 6C is a photograph, which is taken by an optical microscope, of a transfer layer manufactured by the method according to the comparative example.
  • FIG. 7 is a cross-sectional view of an organic light-emitting device that is manufactured by the method of manufacturing the flexible element according to the present invention.
  • a patterned release layer capable of absorbing laser, an impurity barrier layer, and a transfer layer are sequentially deposited on a glass substrate.
  • the transfer layer includes an anode, a hole transport layer, a light-emitting layer, and a cathode. Then, after a plastic substrate is attached to the transfer layer, laser is radiated onto the glass substrate to decompose a material of the release layer. As a result, the impurity barrier layer is separated from the glass substrate.
  • the release layer is a layer for separating the glass substrate from the transfer layer.
  • a band gap of the release layer should be smaller than a band gap corresponding to a wavelength of laser to be used so that the release layer can absorb the laser. Since KrF laser having a wavelength of 248 nm is used in the first embodiment of the present invention, GaO having a band gap of 4.8 eV or ITO having a band gap of 3.7 eV is used as a material of the release layer.
  • the impurity barrier layer prevents impurities such as moisture and oxygen, which are generated when the release layer is decomposed due to the laser radiation, from being implanted into an element, that is, the transfer layer.
  • Silicon oxide is used as a material of the impurity barrier layer.
  • the material of the impurity barrier layer may include silicon nitride, and other oxides or nitrides.
  • the transfer layer includes an anode, a hole transport layer, a light-emitting layer, and a cathode, which are sequentially disposed in this order.
  • ITO is used as a material of the anode
  • 4'-bis [N-(l-naphtyl)-N-phenyl-amino] biphenyl(a-NPD) is used as a material of the hole transport layer.
  • tris(8-hydroxyquinoline) aluminum (AIq ) is used as a material of the light-emitting layer
  • Al is used as a material of the cathode.
  • the transfer layer is deposited, a plastic substrate is attached to the transfer layer. Then, laser is radiated onto the glass substrate to decompose the material of the release layer. As a result, the impurity barrier layer is separated from the glass substrate.
  • the release layer is patterned to have the shape of a cell so that the impurity barrier layer is easily separated from the glass substrate during the laser radiation.
  • a GaO layer used as the release layer is decomposed and oxygen is generated.
  • oxygen generated due to the decomposition of the GaO layer can pass through paths formed between cells. As a result, it is possible to prevent cracks, which are caused by gas generated during the decomposition of the release layer, from occurring in the transfer layer.
  • the patterned release layer has a size of 300 D x 300 D, and a distance between patterns is in the range of 30 to 60 D.
  • a patterned release layer, an impurity barrier layer, and a transfer layer are sequentially deposited on a glass substrate.
  • the transfer layer includes an anode, a hole transport layer, a light-emitting layer, and a cathode. Then, after a plastic substrate is attached to the transfer layer, laser is radiated onto the glass substrate to decompose a material of the release layer. As a result, the impurity barrier layer is separated from the glass substrate.
  • a heat barrier layer is further formed in the impurity barrier layer. It is preferable that the heat barrier layer be made of metal having high thermal conductivity, such as Ag, Cu, Au, Al, W, Rh, Ir, Mo, Ru, Zn, Co, Cd, Ni, Pd, or Pt.
  • metal having high thermal conductivity such as Ag, Cu, Au, Al, W, Rh, Ir, Mo, Ru, Zn, Co, Cd, Ni, Pd, or Pt.
  • the heat barrier layer allows heat generated during the laser radiation to be radiated to the outside, and prevents laser from affecting the transfer layer.
  • the heat barrier layer may be formed on the impurity barrier layer or under the impurity barrier layer in addition to in the impurity barrier layer.
  • a release layer capable of absorbing laser, an impurity barrier layer, and a transfer layer are sequentially deposited on a glass substrate.
  • the transfer layer includes an anode, a hole transport layer, a light-emitting layer, and a cathode.
  • T hen after a plastic substrate is attached to the transfer layer, laser is radiated onto the glass substrate to decompose a material of the release layer. As a result, the impurity barrier layer is separated from the glass substrate.
  • the comparative example is different from the first embodiment in that the release layer does not have patterns, and is formed on the entire surface of the glass substrate.
  • FIG. 5A is a cross-sectional view illustrating a method of testing the separation caused by laser radiation.
  • FIG. 5B is a view showing a result of a measurement that is performed on a portion of the transfer layer separated from the glass substrate by using an energy dispersive X-ray after laser radiation.
  • FIG. 5C is a view showing a result of a measurement that is performed on the glass substrate separated from the portion of the transfer layer by using an energy dispersive X-ray after laser radiation.
  • a sample used in the test is obtained as follows: a GaO layer, which is used as a release layer and has a thickness of 0.5 D, is formed on the glass substrate. A Silicon oxide layer, which is used as an impurity barrier layer, is deposited on the release layer. Then, a plastic substrate is attached to the impurity barrier layer. [65] In the case of a patterned sample, patterns are formed of an optical resistor on a glass substrate at intervals of 300 to 1000 D, and a GaO layer is then deposited on the entire surface of the patterned sample to have a thickness of 0.5 D by using an electron- beam deposition device.
  • the thickness of the GaO layer is in the range of 0.2 to 5 D, laser can be radiated. However, it is preferable that the thickness of the GaO layer be as small as possible.
  • the optical resistor is removed using acetone after the deposition. As a result, it is possible to obtain a release layer that includes GaO patterns separated from each other. A silicon oxide layer is deposited on the release layer.
  • a silicon oxide layer is deposited using an induced plasma-chemical beam deposition method at a temperature of 25O 0 C and a pressure of 800 mTorr. Deposition rate is 0.05 D/min. Subsequently, a plastic substrate is attached to the silicon oxide layer by using an epoxy resin. Then, KrF laser is radiated so that the transfer layer is separated from the glass substrate.
  • FIG. 6A is a photograph, which is taken by an optical microscope, of a transfer layer according to the first embodiment of the present invention.
  • FIG. 6B is a photograph, which is taken by an optical microscope, of a transfer layer according to the second embodiment of the present invention.
  • FIG. 6C is a photograph, which is taken by an optical microscope, of a transfer layer according to the comparative example.
  • the transfer layer is clearly separated from the glass substrate as shown in FIG. 6A if a patterned release layer is formed to have a size of 300 D x 300 D and laser is radiated onto the release layer like the first embodiment.
  • a patterned release layer is formed to have a size of 300 D x 300 D and laser is radiated onto the release layer like the first embodiment.
  • patterns are formed on the GaO release layer and serve as paths through which oxygen generated during the decomposition of the release layer passes.
  • the transfer layer is clearly separated from the glass substrate as shown in FIG. 6B. Furthermore, the heat barrier layer prevents the effect on the transfer layer that may be caused by the laser radiation, for example, the occurrence of cracks in the cathode.
  • FIG. 6C if a release layer is not patterned on a glass substrate and formed on the entire of the glass substrate and laser is then radiated like the comparative example.
  • the reason for this is presumed as follows: when the release layer is decomposed due to the laser radiation, gas is generated. Since the transfer layer does not have paths through which the gas passes, cracks occur due to the pressure of the gas.
  • FIG. 7 is a cross-sectional view of an organic light-emitting device that is manufactured by the method of manufacturing a flexible element according to the present invention.
  • a release layer, an impurity barrier layer, and a transfer layer are sequentially laminated on a glass substrate. Then, a plastic substrate is attached to the transfer layer by using an epoxy resin. Subsequently, if laser is radiated onto the glass substrate, the release layer is decomposed and the transfer layer is separated from the glass substrate. After that, a plastic substrate is attached to a separation surface of the transfer layer by using an epoxy resin, so that a flexible element having a cross-section shown in FIG. 7 is obtained.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un élément flexible et, notamment, une diode électroluminescente organique. Un procédé de fabrication de cet élément flexible consiste à former une couche de libération à motifs sur un substrat en verre, à former une couche barrière contre les impuretés sur la couche de libération, à former une couche de transfert sur la couche barrière contre les impuretés, à fixer un substrat en plastique à la couche de transfert et à séparer le substrat en verre de la couche de transfert en projetant un rayon laser sur le substrat en verre afin de décomposer la couche de libération. L'invention permet de fabriquer un élément flexible en recourant à tous les processus de fabrication d'une diode électroluminescente organique avec du verre comme substrat. Elle permet également de procéder à haute température tout en évitant la déformation du substrat due à la chaleur et à l'utilisation de produits chimiques pendant la fabrication de l'élément, et d'aligner aisément le substrat.
PCT/KR2007/003792 2006-08-07 2007-08-07 Procédé de fabrication d'un élément flexible à l'aide d'un laser et élément flexible correspondant WO2008018737A1 (fr)

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KR1020060074084A KR20080013068A (ko) 2006-08-07 2006-08-07 레이저를 이용한 플렉서블 소자의 제조방법 및 플렉서블소자
KR10-2006-0074084 2006-08-07

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Cited By (4)

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US8466456B2 (en) 2009-12-24 2013-06-18 Samsung Display Co., Ltd. Organic light-emitting display device and method of manufacturing the same
JP2017063061A (ja) * 2009-07-02 2017-03-30 株式会社半導体エネルギー研究所 発光装置の作製方法
CN106920813A (zh) * 2015-12-28 2017-07-04 昆山工研院新型平板显示技术中心有限公司 柔性显示器的制备方法
EP2255399B1 (fr) * 2008-02-15 2018-08-22 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Procédé de fabrication d'un dispositif électronique encapsulé

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KR101010023B1 (ko) * 2008-12-15 2011-01-21 포항공과대학교 산학협력단 레이저 빔을 이용한 플렉서블 소자의 제조 방법
KR101897743B1 (ko) 2011-06-01 2018-09-13 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법

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US20050088081A1 (en) * 2003-09-30 2005-04-28 Sanyo Electric Co., Ltd. Organic electroluminescent device

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US20030217805A1 (en) * 2002-05-17 2003-11-27 Semiconductor Energy Laboratory Co. , Ltd. Method of transferring a laminate and method of manufacturig a semiconductor device
US20040266165A1 (en) * 2003-05-23 2004-12-30 Seiko Epson Corporation Method of producing thin-film device, electro-optical device, and electronic apparatus
US20050088081A1 (en) * 2003-09-30 2005-04-28 Sanyo Electric Co., Ltd. Organic electroluminescent device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2255399B1 (fr) * 2008-02-15 2018-08-22 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Procédé de fabrication d'un dispositif électronique encapsulé
JP2017063061A (ja) * 2009-07-02 2017-03-30 株式会社半導体エネルギー研究所 発光装置の作製方法
US10418586B2 (en) 2009-07-02 2019-09-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and electronic device
US8466456B2 (en) 2009-12-24 2013-06-18 Samsung Display Co., Ltd. Organic light-emitting display device and method of manufacturing the same
CN106920813A (zh) * 2015-12-28 2017-07-04 昆山工研院新型平板显示技术中心有限公司 柔性显示器的制备方法

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