WO2008016023A1 - Dispositif d'alimentation en gaz et appareil de traitement de carte - Google Patents

Dispositif d'alimentation en gaz et appareil de traitement de carte Download PDF

Info

Publication number
WO2008016023A1
WO2008016023A1 PCT/JP2007/064932 JP2007064932W WO2008016023A1 WO 2008016023 A1 WO2008016023 A1 WO 2008016023A1 JP 2007064932 W JP2007064932 W JP 2007064932W WO 2008016023 A1 WO2008016023 A1 WO 2008016023A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas supply
gas
supply holes
concentric circle
concentric
Prior art date
Application number
PCT/JP2007/064932
Other languages
English (en)
Japanese (ja)
Inventor
Kensaku Narushima
Kunihiro Tada
Satoshi Wakabayashi
Tetsuya Saitou
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to KR1020097002282A priority Critical patent/KR101063105B1/ko
Priority to CN2007800290977A priority patent/CN101501244B/zh
Publication of WO2008016023A1 publication Critical patent/WO2008016023A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas

Definitions

  • the present invention relates to a gas supply device that supplies a processing gas into a processing container from a plurality of gas supply holes facing the substrate, for example, in order to perform a predetermined film forming process on the substrate, and the gas supply
  • the present invention relates to a substrate processing apparatus.
  • One of the semiconductor manufacturing processes is a film forming process, which is usually activated by, for example, plasma or thermal decomposition of a processing gas in a vacuum atmosphere, and active species or reaction products are formed on the substrate surface. This is done by depositing.
  • a film forming process there is a process for forming a film by reacting multiple types of gases. This process includes metals such as Ti, Cu and Ta, or metal compounds such as TiN, TiSi and WSi, or SiN, Si 02
  • An apparatus for performing such a film forming process includes a mounting table for mounting a substrate in a processing container forming a vacuum chamber and a gas supply device provided in the processing container.
  • a heating device or plasma generation means which is a means to give energy to the gas, is provided in combination!
  • the gas supply device is generally called a gas shower head, and is provided so as to close an opening formed in the ceiling portion of the processing container and to face the mounting table.
  • a gas diffusion space is formed in a flat cylindrical body! /, And a shower plate with a large number of gas supply holes is arranged on the bottom surface, Then, the processing gas flows into the diffusion space and is blown out into the processing space from the gas supply hole force.
  • the shower plate has the same number of gas supply holes per unit area so that gas can be uniformly supplied onto the substrate.
  • a pattern arranged in a matrix form vertically and horizontally as shown in FIG. 10 and a pattern arranged at equal intervals on concentric circles as shown in FIG. 11 are known.
  • Figs. 10 and 11 1 is a shower plate and 11 is a gas supply hole.
  • the diameter of the gas supply holes is small and the number of concentric circles is large.
  • FIG. 13 the force is shown in only one place on this area.
  • this area On the shower plate 1, this area is shifted by 90 degrees from the central portion and extends in four directions, and has a cross shape as a whole. Focusing on the area within this frame, if expressed in macro terms, gas cannot be blown to the part facing the frame on the wafer W side.
  • the flow velocity of the gas flow A in the part is extremely slower than the flow velocity of the gas flow on both sides.
  • turbulence occurs at the boundary, resulting in abnormal deposition of products, in other words, Ti grows abnormally. In this way, the locally abnormally grown part is a collection of particles as seen from other areas.
  • Patent Document 1 and Patent Document 2 the shower plate described in these documents, which does not have such attention at all, was adopted from the viewpoint that the number of gas supply holes per unit area is uniform and the design is easy. Is.
  • Patent Document 1 Japanese Patent Laid-Open No. 5-152218: FIG.
  • Patent Document 2 JP 2004-76023 A: FIG. 22, paragraph 0100
  • the present invention has been made under such circumstances, and an object of the present invention is to provide a directional force from the central portion of the substrate to the outer peripheral portion in a gas supply apparatus that supplies a processing gas into the processing container.
  • the present invention is arranged so as to face the mounting table in order to supply processing gas into a processing container provided with a mounting table on which a substrate is mounted, and has a large number of gas supply holes.
  • a gas supply device with a single plate! / The gas supply holes are arranged on a number of concentric circles.
  • the gas supply hole arrangement pattern is such that, for any concentric circle except the outermost and innermost circumferences, the gas supply holes on the concentric circle, the concentric circles adjacent to the inner side, and the concentric circles adjacent to the outer side are the nearest gas.
  • the supply holes are not arranged on the radius of the concentric circle.
  • the gas supply hole arrangement pattern be aligned with the number of gas supply holes per unit area (for example, a square area of 2 cm ⁇ 2 cm)! /.
  • the gas supply holes are arranged in such a manner that the gas supply holes are arranged in the circumferential direction at equal intervals for each concentric circle, and one gas supply hole in each concentric circle is once arranged on the radius of the concentric circle.
  • the gas supply holes arranged on the radius should be formed by rearranging the arrangement pitches in the circumferential direction at equal intervals so that they are arranged along an algebraic spiral curve extending from the center of the concentric circle. it can.
  • the gas supply hole arrangement pattern includes a concentric circle in which the gas supply holes are arranged at the first pitch, and a concentric circle in which the gas supply holes are located outside the concentric circle and arranged at a second pitch wider than the first pitch.
  • the force S is designed so that there is a concentric circle located outside the concentric circle and having gas supply holes arranged at a third pitch narrower than the second pitch.
  • the present invention can also be used as a substrate processing apparatus, for example, a film forming apparatus.
  • the apparatus is an airtight processing container, a mounting table provided in the processing container for mounting a substrate, and a processing container. And a gas supply device according to the present invention, wherein the substrate on the mounting table is processed with a processing gas supplied from the gas supply device.
  • the gas supply holes of the shower plate are arranged on a number of concentric circles, and the arrangement pattern of the gas supply holes is a concentric circle adjacent to the gas supply holes on the concentric circle and a concentric circle adjacent to the outside.
  • the arrangement pattern of the gas supply holes is set so that each nearest gas supply hole is aligned on a concentric radius! For this reason, there is no band-like dead space that extends in the radial direction of the concentric circles and does not include the gas supply holes.Therefore, the direction of force from the center of the concentric circles to the outer periphery of the shower plate and the flow velocity of the gas flow are extremely low. The formation of a region where the flow velocity becomes slow is suppressed.
  • FIG. 1 is a longitudinal sectional view showing a film forming apparatus incorporating a gas supply apparatus according to an embodiment of the present invention.
  • FIG. 2 is a longitudinal sectional view showing in detail the gas supply apparatus according to the above embodiment.
  • FIG. 3 is a plan view showing an arrangement pattern of gas supply holes of a shower plate in the gas supply device according to the above embodiment.
  • FIG. 4 is an enlarged plan view showing a part of the arrangement pattern of the gas supply holes of the shower plate.
  • FIG. 5 is an explanatory diagram for explaining a method of forming an array pattern of gas supply holes of a shower plate.
  • FIG. 6 is an explanatory diagram showing a method for obtaining a distribution of the number of gas supply holes in 1 degree increments in the circumferential direction of the shower plate.
  • FIG. 7 is an explanatory diagram showing the distribution of the number of gas supply holes in 1 degree increments in the circumferential direction of the shower plate.
  • FIG. 8 is an explanatory diagram showing the simulation result of the flow velocity distribution in 1 degree increments in the circumferential direction of the shower plate.
  • FIG. 9 is an explanatory view showing the simulation result of the distribution of flow velocity in the circumferential direction for the shower plate.
  • FIG. 10 is a plan view showing an arrangement pattern of gas supply holes of a conventional shower plate.
  • FIG. 11 is a plan view showing an arrangement pattern of gas supply holes of a conventional shower plate.
  • FIG. 12 is a plan view showing a particle distribution on a semiconductor wafer when a conventional shower plate is used.
  • FIG. 13 is an explanatory diagram for explaining an estimation factor of particle generation in a conventional shower plate.
  • FIG. 1,! /, 2 is a processing vessel which is a vacuum chamber made of, for example, aluminum.
  • This processing vessel 2 has a cylindrical portion 2a having a large diameter on the upper side and a cylindrical portion 2b having a small diameter on the lower side. It is formed in a mushroom shape and is provided with a heating mechanism (not shown) for heating the inner wall.
  • stage 21 that forms a substrate mounting table for horizontally mounting a substrate, for example, a semiconductor wafer (hereinafter referred to as a wafer) W, and this stage 21 is supported on the bottom of the small diameter portion 2b. Supported by member 22! /
  • stage 21 there are provided a heater (not shown) that forms a temperature control means for the wafer W and a conductive member (not shown) that serves as a lower electrode described later. Further, if necessary, an electrostatic chuck (not shown) for electrostatically adsorbing the wafer W is provided. Further, the stage 21 is provided with, for example, three support pins 23 for holding and lifting the wafer W so as to be able to protrude and retract with respect to the surface of the stage 21, and the support pins 23 are provided via support members 24. It is connected to the lifting mechanism 25 outside the processing container 2.
  • One end side of an exhaust pipe 26 is connected to the bottom of the processing vessel 2, and a vacuum pump 27, which is a vacuum exhaust means, is connected to the other end side of the exhaust pipe 26.
  • a transfer port 29 that is opened and closed by a gate valve 28 is formed on the side wall of the large-diameter portion 2 a of the processing container 2.
  • an opening 31 is formed in the ceiling of the processing container 2, and a gas shower head 4, which is a gas supply device of the present invention, is provided so as to close the opening 31 and face the stage 21. It has been.
  • the gas shower head 4 and the stage 21 also serve as an upper electrode and a lower electrode, respectively.
  • the gas shower head 4 is connected to the high-frequency power source unit 33 through the matching unit 32, and the stage 21 as the lower electrode. Is grounded.
  • the wiring diagram is shown in a simplified manner. Actually, the stage 21 is electrically connected to the processing container 2 and is grounded from above the processing container 2 through a matching box (not shown). The conductive path of the frequency wraps around the processing space.
  • the gas shower head 4 includes a base member 41 made of a flat bottomed cylindrical body that closes the opening at the top of the processing container 1, and a lower side of the bottom surface of the base member 41.
  • Set in A shower plate 5 is provided. Since the base member 41 also has a role of partitioning the vacuum atmosphere in the processing container 1 from the atmospheric atmosphere, the flange portion 42 at the upper peripheral edge and the peripheral portion 43 of the opening of the processing container 1 are ring-shaped resin seal members The O-ring 44 is airtightly joined.
  • two gas supply pipes 61 and 62 are connected to the central portion of the base member 41, and the gas supply holes 7 of the shower plate 5 from which the gases of the gas supply pipes 61 and 62 are separated, respectively.
  • (7a) and 7 (7b) Forces are also configured to be ejected. That is, a diffusion plate 64 in which a space 63 communicating with one gas supply pipe 61 is formed is stacked on the shower plate 5, and the upper side of the diffusion plate 64 is connected to the other gas supply pipe 62. The space 63 is communicated and formed as a partitioned space 65.
  • One gas supply hole 7 (7a) communicates with the space 63, and the other gas supply hole 7 (7b) communicates with the space 65.
  • the shower plate 6 will be described in detail later.
  • the one gas supply pipe 61 includes, for example, a TiC14 gas source 102, an Ar gas source, as shown in FIG.
  • the other gas supply pipe 62 connected to the 103 and the C1F3 gas source 104 is connected to, for example, an H2 gas source 106 and an NH3 gas source 107.
  • the portion indicated by 108 surrounded by a chain line is a group of gas supply devices such as valves and mass flow controllers provided in each gas supply path.
  • the shower plate 5 in this example is used for a 300 mm wafer, and each of them is arranged along 19 concentric circles 51 centering on the center of a circular plate body 50 as shown in FIGS. 3 and 4.
  • Gas supply holes 7 are formed at intervals, and further, gas supply holes 7 are formed at the center of the concentric circle (the center of the shower plate 5).
  • the gas supply holes 7 include gas supply holes 7a and 7b through which different gases blow out, but these gas supply holes 7a and 7b are alternately arranged in the circumferential direction. It will be described as hole 7.
  • the diameter of the gas supply hole 7 is, for example, lmm.
  • the radius of the outermost concentric circle 51 is 163 mm, and the intervals between the concentric circles are set at equal intervals.
  • the gas supply holes 7 of the concentric circles 51 are once arranged so as to be aligned on the radius of the concentric circles 51, and then as shown in FIG.
  • the gas supply holes 7 arranged on these radii are arranged along the algebraic spiral curve S extending from the center of the concentric circle 51. .
  • R and ⁇ are the distance in polar coordinates and the angle from the reference direction with the center of the concentric circle 51 as the zero point, and a is a variable. is there.
  • the arrangement density of the gas supply holes 7 in the minute region extending in the radial direction of the concentric circle 51 is made uniform between the respective directions. To do so. That is, as shown in FIG. 6, a belt-like region (elongated rectangular region) L that does not include the center C of the concentric circle 51 but includes the innermost concentric circle 51 and the outermost concentric circle 51 in the circumferential direction. Rotate and measure the number of gas supply holes 7 in the belt-like region L at each angular position, and obtain the distribution of the number.
  • Figure 7 shows the distribution of the number of gas supply holes obtained by rotating the belt-like region L from 1 to 90 degrees.
  • the width 2d d of the belt-like region L corresponds to the angular resolution, and at least the width 2d is arranged. For example, set it to 4 mm so that it is less than the pitch. As shown in FIG. 7, the number of gas supply holes 7 at each angular position is within 15-20.
  • the gas supply holes 7 are arranged so that the number of the gas supply holes 7 per unit area is uniform.
  • Per unit area means that the area in the outermost concentric circle 51 is divided into square grids of 2cm x 2cm, for example (excluding the area in contact with the outermost concentric circle 51), and the gas supply hole between each divided area In this example, the minimum number of holes in each divided area is 5, and the maximum value is 7.
  • a wafer W which is a substrate
  • a transfer arm (not shown)
  • a mixed gas of TiC14 gas and Ar gas which is the first gas
  • the second gas H2 gas is sent from the gas supply source 106 to the gas shower head 4 through the gas supply pipe 62.
  • the first gas and the second gas are separately supplied to the processing atmosphere from the gas supply holes 7 (7a) and (7b) of the shower plate 5.
  • the inside of the processing container 2 is evacuated by the vacuum pump 27, and a pressure adjusting valve (not shown) provided in the exhaust pipe 26 is adjusted to set the pressure in the processing container 2 to the set pressure, and the high frequency power supply unit High-frequency power is supplied from 33 to the gas showerhead 4 as the upper electrode and the stage 21 as the lower electrode from 33, and the processing gas, that is, the first gas and the second gas are made into plasma, and TiC14 is converted into H2 by H2. Reduce and deposit a Ti film on the surface of wafer W. At this time, HC1, which is a reaction byproduct, is exhausted together with the unreacted gas.
  • a TiN film is formed by nitriding the Ti film following the formation of the Ti film.
  • the TiC14 gas as the first gas and the H2 gas as the second gas are used. Stop supplying and start supplying NH 3 (ammonia) gas. Even at this time, high frequency power is supplied to the processing space, and the surface of the Ti thin film already formed on the wafer W is nitrided by the active species of NH3. After nitriding is completed, the supply of high-frequency power and the supply of NH3 gas are stopped, and then the wafer W is unloaded from the processing container 2 by the reverse operation to the loading operation described above.
  • NH 3 ammonia
  • the effect of the shower plate 5 will be described.
  • the conventional shower plate has only focused on the number of gas supply holes per unit area.
  • the gas flow velocity in each direction is roughly aligned.
  • the number of gas supply holes 7 is arranged on a large number of concentric circles 51, and the gas supply holes 7 are arranged at equal intervals for each concentric circle 51.
  • the reason why the intervals are equal is that the number of the gas supply holes 7 is made uniform per unit area.
  • any concentric circle 51 except the outermost and innermost circumferences is connected to the gas supply hole 7 on the concentric circle 51 and the inner side.
  • the concentric circles 51 adjacent to each other and the gas supply holes 7 immediately adjacent to the concentric circles 51 adjacent to the outside are not aligned on the radius of the concentric circles 51, that is, The concentric circles 51 adjacent to each other should be designed so that the three gas supply holes 7 are on the radius! /.
  • the gas supply holes 7 of the concentric circles 51 are shifted using a spiral curve as described above.
  • FIG. 8 is a diagram illustrating the rotation of the belt-like region L shown in FIG. 6 in the circumferential direction in increments of 1 degree, and the directional force and flow velocity from the center of the concentric circle 51 in the belt-like region L to the outer periphery.
  • the flow velocity distribution in the circumferential direction obtained by this calculation is shown.
  • the shower plate is divided into three concentric circles by four circles with radii of 170 mm, 120 mm, 60 mm, and 40 mm, and a, b, and c indicate the flow velocity distribution in these divided regions, respectively.
  • the flow rate per unit area is obtained from the number of gas supply holes 7 present in each of the three divided regions, and the flow rate and the number of gas supply holes 7 in the band-like region at the corresponding angle are obtained from The flow velocity in each angular region (band region L) was calculated.
  • FIG. 9 shows the in-plane flow velocity distribution on wafer W, which is obtained by color coding and copied as a black and white image.
  • Fig. 9 (a) uses the shower plate 5 of the above embodiment.
  • Figure 9 (b) shows the results when using a shower plate (see Figure 10) with gas supply holes arranged in a matrix.
  • the region where the flow velocity is extremely small is formed in a cross shape, which corresponds to the cross-shaped particle adhesion pattern on the wafer W as described in the background section. is doing. Therefore, the cause of the cross-shaped particle adhesion pattern corresponds to the arrangement pattern of the gas supply holes of the shower plate through the result of the flow velocity distribution.
  • the circumferential flow velocities are generally uniform, and since the region where the flow velocities are extremely slow is not seen, the occurrence of the cross-shaped particle adhesion pattern is eliminated. Is done. For this reason, restrictions on the process conditions are relaxed, so that the degree of freedom in setting process conditions is widened. For example, it is possible to set conditions such as increasing the gas flow rate to improve throughput.
  • the gas shower head 4 described above is a post-mix type that supplies the first gas and the second gas separately into the processing container 2, and mixes both gases in advance before processing. Atmosphere It can also be applied to a premix type that supplies air.
  • the present invention is not limited to Ti film formation.
  • metals such as W, Cu, Ta, Ru, and Hf
  • the substrate processing apparatus to which the gas showerhead of the present invention is applied is not limited to a plasma CVD apparatus, but can be applied to a thermal CVD apparatus, an etching apparatus, an ashing apparatus, a sputtering apparatus, an annealing apparatus, and the like.

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un dispositif d'alimentation en gaz appelé tête de douche à gaz ou analogue dans lequel l'occurrence de zones denses de particules telles que des particules cruciformes est supprimée et le degré de liberté des conditions de traitement est augmenté en rendant la distribution de vitesse d'écoulements de gaz à partir du centre jusqu'aux parties périphériques extérieures d'une carte le long de la direction circonférentielle plus uniforme qu'avant. La configuration d'agencement d'orifices d'alimentation en gaz formés dans la plaque de douche du dispositif d'alimentation en gaz est établie de sorte que ces orifices soient agencés sur un nombre important de cercles concentriques et qu'un orifice d'alimentation en gaz sur un cercle concentrique et des orifices d'alimentation en gaz les plus près de cet orifice d'alimentation en gaz et sur des cercles concentriques, respectivement vers l'intérieur et vers l'extérieur, adjacents à ce cercle concentrique ne soient pas agencés dans la direction radiale des cercles concentriques.
PCT/JP2007/064932 2006-08-04 2007-07-31 Dispositif d'alimentation en gaz et appareil de traitement de carte WO2008016023A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020097002282A KR101063105B1 (ko) 2006-08-04 2007-07-31 가스 공급 장치 및 기판 처리 장치
CN2007800290977A CN101501244B (zh) 2006-08-04 2007-07-31 气体供给装置以及基板处理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006213932A JP5157101B2 (ja) 2006-08-04 2006-08-04 ガス供給装置及び基板処理装置
JP2006-213932 2006-08-04

Publications (1)

Publication Number Publication Date
WO2008016023A1 true WO2008016023A1 (fr) 2008-02-07

Family

ID=38997199

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/064932 WO2008016023A1 (fr) 2006-08-04 2007-07-31 Dispositif d'alimentation en gaz et appareil de traitement de carte

Country Status (5)

Country Link
JP (1) JP5157101B2 (fr)
KR (1) KR101063105B1 (fr)
CN (1) CN101501244B (fr)
TW (1) TWI392762B (fr)
WO (1) WO2008016023A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10829855B2 (en) 2016-05-20 2020-11-10 Applied Materials, Inc. Gas distribution showerhead for semiconductor processing

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8291857B2 (en) * 2008-07-03 2012-10-23 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
US20100006032A1 (en) * 2008-07-11 2010-01-14 Applied Materials, Inc. Chamber components for cvd applications
KR101108879B1 (ko) 2009-08-31 2012-01-30 주식회사 원익아이피에스 가스분사장치 및 이를 이용한 기판처리장치
KR101625078B1 (ko) * 2009-09-02 2016-05-27 주식회사 원익아이피에스 가스분사장치 및 이를 이용한 기판처리장치
JP2013048227A (ja) * 2011-07-25 2013-03-07 Tokyo Electron Ltd シャワーヘッド装置及び成膜装置
WO2013070438A1 (fr) * 2011-11-08 2013-05-16 Applied Materials, Inc. Caractéristiques de distribution de précurseurs pour une uniformité de dépôt améliorée
US20220093366A1 (en) * 2019-02-01 2022-03-24 Lam Research Corporation Showerhead for deposition tools having multiple plenums and gas distribution chambers

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05152218A (ja) * 1991-11-28 1993-06-18 Tokyo Electron Ltd 表面処理装置
JPH08186079A (ja) * 1994-12-28 1996-07-16 Nissan Motor Co Ltd 基板表面処理装置
JP2001358135A (ja) * 2000-06-14 2001-12-26 Hitachi Kokusai Electric Inc 半導体製造装置
JP2002299256A (ja) * 2001-03-30 2002-10-11 Hitachi Kokusai Electric Inc 半導体製造装置
JP2002299255A (ja) * 2001-03-30 2002-10-11 Hitachi Kokusai Electric Inc 半導体製造装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4079212B2 (ja) * 2001-04-17 2008-04-23 東京エレクトロン株式会社 塗布膜形成装置およびスピンチャック
WO2003001578A1 (fr) * 2001-06-20 2003-01-03 Tokyo Electron Limited Dispositif de traitement au plasma par micro-ondes, procede de traitement au plasma, et organe de rayonnement de micro-ondes
JP3913646B2 (ja) * 2002-08-30 2007-05-09 東京エレクトロン株式会社 基板処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05152218A (ja) * 1991-11-28 1993-06-18 Tokyo Electron Ltd 表面処理装置
JPH08186079A (ja) * 1994-12-28 1996-07-16 Nissan Motor Co Ltd 基板表面処理装置
JP2001358135A (ja) * 2000-06-14 2001-12-26 Hitachi Kokusai Electric Inc 半導体製造装置
JP2002299256A (ja) * 2001-03-30 2002-10-11 Hitachi Kokusai Electric Inc 半導体製造装置
JP2002299255A (ja) * 2001-03-30 2002-10-11 Hitachi Kokusai Electric Inc 半導体製造装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10829855B2 (en) 2016-05-20 2020-11-10 Applied Materials, Inc. Gas distribution showerhead for semiconductor processing

Also Published As

Publication number Publication date
TWI392762B (zh) 2013-04-11
TW200827480A (en) 2008-07-01
CN101501244A (zh) 2009-08-05
KR20090028804A (ko) 2009-03-19
JP5157101B2 (ja) 2013-03-06
KR101063105B1 (ko) 2011-09-07
CN101501244B (zh) 2012-07-18
JP2008038200A (ja) 2008-02-21

Similar Documents

Publication Publication Date Title
WO2008016023A1 (fr) Dispositif d'alimentation en gaz et appareil de traitement de carte
KR102236832B1 (ko) 플라즈마 프로세싱을 위한 가변하는 두께를 갖는 상부 전극
KR20230133257A (ko) 다공성 베플을 갖는 저 볼륨 샤워헤드
US10867819B2 (en) Vacuum processing apparatus, vacuum processing system and vacuum processing method
TWI794808B (zh) 半導體反應腔室及原子層等離子體蝕刻設備
JP2014017322A (ja) 成膜装置の運転方法及び成膜装置
TWI651800B (zh) 基板處理方法及基板處理裝置
KR20160123248A (ko) 깨끗한/더러운 기판 핸들링을 위한 엔드 이펙터 어셈블리
TW201439366A (zh) 成膜裝置
KR20230088467A (ko) 열적 균일 증착 스테이션
TW202245029A (zh) 均勻的原位清洗及沉積
WO2021257318A1 (fr) Conception de plaque de pompage d'échappement asymétrique pour une chambre de traitement de semi-conducteur
JP2024514139A (ja) 処理チャンバ用の改良されたアイソレータ
US20220165567A1 (en) Systems and methods for deposition residue control
JP7279605B2 (ja) 成膜装置及び成膜装置の運用方法
US12077855B2 (en) Cleaning method and film deposition apparatus
WO2024053442A1 (fr) Dispositif de traitement au plasma
US20230133402A1 (en) Injection module for a process chamber
US20240105470A1 (en) Substrate processing apparatus and semiconductor device manufacturing method using the same
US20230087913A1 (en) Coolant channel with internal fins for substrate processing pedestals
US20220375746A1 (en) Semiconductor substrate bevel cleaning
WO2024163511A1 (fr) Réduction de fissuration de film de traction
KR20240001985A (ko) 퍼지 메커니즘을 갖는 스핀들 어셈블리 및 퍼지 메커니즘을 갖는 리프트 핀 드라이브 어셈블리
JP2024538981A (ja) 下流残留物の管理ハードウェア
WO2024030386A1 (fr) Couche arrière conductrice pour atténuation d'arc

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200780029097.7

Country of ref document: CN

DPE2 Request for preliminary examination filed before expiration of 19th month from priority date (pct application filed from 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07791617

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 1020097002282

Country of ref document: KR

NENP Non-entry into the national phase

Ref country code: DE

NENP Non-entry into the national phase

Ref country code: RU

122 Ep: pct application non-entry in european phase

Ref document number: 07791617

Country of ref document: EP

Kind code of ref document: A1