WO2008016023A1

WO2008016023A1 - Gas supply device and board treatment apparatus

Info

Publication number: WO2008016023A1
Application number: PCT/JP2007/064932
Authority: WO
Inventors: Kensaku Narushima; Kunihiro Tada; Satoshi Wakabayashi; Tetsuya Saitou
Original assignee: Tokyo Electron Limited
Priority date: 2006-08-04
Filing date: 2007-07-31
Publication date: 2008-02-07
Also published as: KR101063105B1; KR20090028804A; TWI392762B; JP2008038200A; TW200827480A; CN101501244B; JP5157101B2; CN101501244A

Abstract

In a gas supply device called a gas shower head or the like, the occurrence of dense areas of particles such as cross-like particles is suppressed and the degree of freedom of process conditions is increased by making more uniform the flow velocity distribution of gas flows from the center to the outer peripheral parts of a board along the circumferential direction than before. The arrangement pattern of gas supply holes formed in the shower plate of the gas supply device is so set that these holes are arranged on a large number of concentric circles and that a gas supply hole on a concentric circle and gas supply holes nearest that gas supply hole and on concentric circles respectively inwardly and outwardly adjacent to that concentric circle are not arranged in the radial direction of the concentric circles.

Description

Specification

Gas supply apparatus and substrate processing apparatus

Technical field

The present invention relates to a gas supply device that supplies a processing gas into a processing container from a plurality of gas supply holes facing the substrate, for example, in order to perform a predetermined film forming process on the substrate, and the gas supply The present invention relates to a substrate processing apparatus.

Background art

[0002] One of the semiconductor manufacturing processes is a film forming process, which is usually activated by, for example, plasma or thermal decomposition of a processing gas in a vacuum atmosphere, and active species or reaction products are formed on the substrate surface. This is done by depositing. In the film formation process, there is a process for forming a film by reacting multiple types of gases. This process includes metals such as Ti, Cu and Ta, or metal compounds such as TiN, TiSi and WSi, or SiN, Si 02

The formation of a thin film such as an insulating film can be given.

[0003] An apparatus for performing such a film forming process includes a mounting table for mounting a substrate in a processing container forming a vacuum chamber and a gas supply device provided in the processing container. A heating device or plasma generation means, which is a means to give energy to the gas, is provided in combination! The gas supply device is generally called a gas shower head, and is provided so as to close an opening formed in the ceiling portion of the processing container and to face the mounting table. For a more specific structure of the gas supply device, a gas diffusion space is formed in a flat cylindrical body! /, And a shower plate with a large number of gas supply holes is arranged on the bottom surface, Then, the processing gas flows into the diffusion space and is blown out into the processing space from the gas supply hole force.

[0004] The shower plate has the same number of gas supply holes per unit area so that gas can be uniformly supplied onto the substrate. As the arrangement pattern of the gas supply holes, a pattern arranged in a matrix form vertically and horizontally as shown in FIG. 10 and a pattern arranged at equal intervals on concentric circles as shown in FIG. 11 are known. Patent documents 1 And Patent Document 2. In Figs. 10 and 11, 1 is a shower plate and 11 is a gas supply hole. In actual shower plates used for 300mm wafers, the diameter of the gas supply holes is small and the number of concentric circles is large.

[0005] By the way, in the process of forming a Ti film on a semiconductor wafer (hereinafter referred to as a wafer) using a mixed gas of TiC14, H2 and Ar, particles on the wafer were evaluated. As shown in FIG. 12, it was found that a region where particles 12 are excessively adhered on the wafer W is formed in a cross shape. This cross-shaped partical adhesion pattern P (actually, the force with which the particles are dense, indicated by diagonal lines for convenience) is when the flow velocity of the gas flowing from the shower plate 1 into the processing atmosphere is increased. It occurs when the flow velocity exceeds a certain level, and the generation point shifts to the higher flow rate as the overall gas flow rate increases. In other words, if the gas flow rate is reduced, a cross-shaped particle adhesion pattern is generated even at a low flow rate.

[0006] As a result of various studies on this reason, it was found that the gas flow from the central part of the wafer toward the outer peripheral part was related to the flow velocity distribution in the circumferential direction. In other words, since this type of film forming apparatus exhausts at the lower part of the processing vessel, the gas flow on the wafer surface is dominant from the center to the outer periphery. Gas flow velocity is extremely slow! /, There is a region. For example, for the shower plate 1 in which the gas supply holes 11 are arranged in a matrix, as shown in FIG. 13, the gas supply holes 11 are parallel from the center of the shower plate 1 toward the outer periphery, that is, in the radial direction. There is an area lined up in a straight line.

[0007] In FIG. 13, the force is shown in only one place on this area. On the shower plate 1, this area is shifted by 90 degrees from the central portion and extends in four directions, and has a cross shape as a whole. Focusing on the area within this frame, if expressed in macro terms, gas cannot be blown to the part facing the frame on the wafer W side. The flow velocity of the gas flow A in the part is extremely slower than the flow velocity of the gas flow on both sides. When a region with a high flow rate and a region with a low flow rate are adjacent to each other, turbulence occurs at the boundary, resulting in abnormal deposition of products, in other words, Ti grows abnormally. In this way, the locally abnormally grown part is a collection of particles as seen from other areas. This is a joint region and adversely affects the electrical characteristics of the chip including this part. It is intuitively understood that the faster the flow rate of the gas flow blown from the shower plate 1, the greater the degree of turbulent flow at the boundary, so the cross-shaped particle adhesion pattern P is more likely to occur. Is consistent with the experimental results.

[0008] It can be easily imagined that the above phenomenon occurs even when the gas supply holes are arranged at equal intervals on a concentric circle. That is, even in this case, there is a cross-shaped region in which the gas supply holes 11 are arranged in parallel and linearly from the center portion of the shower plate 1 toward the outer peripheral portion.

[0009] As described above, in the conventional shower plate, since the cross-shaped particle adhesion pattern P is generated depending on the process condition, there is a problem that the degree of freedom in setting the process condition is limited. For example, there is a disadvantage that the gas flow rate cannot be set large to improve throughput!

In addition, in Patent Document 1 and Patent Document 2, the shower plate described in these documents, which does not have such attention at all, was adopted from the viewpoint that the number of gas supply holes per unit area is uniform and the design is easy. Is.

Patent Document 1: Japanese Patent Laid-Open No. 5-152218: FIG.

Patent Document 2: JP 2004-76023 A: FIG. 22, paragraph 0100

Disclosure of the invention

Problems to be solved by the invention

The present invention has been made under such circumstances, and an object of the present invention is to provide a directional force from the central portion of the substrate to the outer peripheral portion in a gas supply apparatus that supplies a processing gas into the processing container. By aligning the flow velocity distribution in the circumferential direction with respect to the gas flow compared to the conventional method, it is possible to suppress the generation of particles and to increase the force and freedom of process conditions, and substrate processing using this shower plate To provide an apparatus.

Means for solving the problem

[0012] The present invention is arranged so as to face the mounting table in order to supply processing gas into a processing container provided with a mounting table on which a substrate is mounted, and has a large number of gas supply holes. A gas supply device with a single plate! / The gas supply holes are arranged on a number of concentric circles.

The gas supply hole arrangement pattern is such that, for any concentric circle except the outermost and innermost circumferences, the gas supply holes on the concentric circle, the concentric circles adjacent to the inner side, and the concentric circles adjacent to the outer side are the nearest gas. The supply holes are not arranged on the radius of the concentric circle.

It is also preferable that the gas supply hole arrangement pattern be aligned with the number of gas supply holes per unit area (for example, a square area of 2 cm × 2 cm)! /.

[0013] The gas supply holes are arranged in such a manner that the gas supply holes are arranged in the circumferential direction at equal intervals for each concentric circle, and one gas supply hole in each concentric circle is once arranged on the radius of the concentric circle. The gas supply holes arranged on the radius should be formed by rearranging the arrangement pitches in the circumferential direction at equal intervals so that they are arranged along an algebraic spiral curve extending from the center of the concentric circle. it can. The gas supply hole arrangement pattern includes a concentric circle in which the gas supply holes are arranged at the first pitch, and a concentric circle in which the gas supply holes are located outside the concentric circle and arranged at a second pitch wider than the first pitch. The force S is designed so that there is a concentric circle located outside the concentric circle and having gas supply holes arranged at a third pitch narrower than the second pitch.

[0014] The present invention can also be used as a substrate processing apparatus, for example, a film forming apparatus. The apparatus is an airtight processing container, a mounting table provided in the processing container for mounting a substrate, and a processing container. And a gas supply device according to the present invention, wherein the substrate on the mounting table is processed with a processing gas supplied from the gas supply device.

[0015] In the present invention, the gas supply holes of the shower plate are arranged on a number of concentric circles, and the arrangement pattern of the gas supply holes is a concentric circle adjacent to the gas supply holes on the concentric circle and a concentric circle adjacent to the outside. The arrangement pattern of the gas supply holes is set so that each nearest gas supply hole is aligned on a concentric radius! For this reason, there is no band-like dead space that extends in the radial direction of the concentric circles and does not include the gas supply holes.Therefore, the direction of force from the center of the concentric circles to the outer periphery of the shower plate and the flow velocity of the gas flow are extremely low. The formation of a region where the flow velocity becomes slow is suppressed. As a result, if an abnormal process is performed in a region extending in a specific direction when viewed from the center of the substrate as in the above-described cross-shaped particle adhesion pattern, it is possible to prevent defects. And even before! If this is the case, it is possible to avoid such problems S. In the present invention, the restriction of process conditions is relaxed, so the degree of freedom in setting process conditions is widened. For example, setting conditions such as increasing the gas flow rate to improve throughput It can be performed.

Brief Description of Drawings

FIG. 1 is a longitudinal sectional view showing a film forming apparatus incorporating a gas supply apparatus according to an embodiment of the present invention.

FIG. 2 is a longitudinal sectional view showing in detail the gas supply apparatus according to the above embodiment.

FIG. 3 is a plan view showing an arrangement pattern of gas supply holes of a shower plate in the gas supply device according to the above embodiment.

FIG. 4 is an enlarged plan view showing a part of the arrangement pattern of the gas supply holes of the shower plate.

FIG. 5 is an explanatory diagram for explaining a method of forming an array pattern of gas supply holes of a shower plate.

FIG. 6 is an explanatory diagram showing a method for obtaining a distribution of the number of gas supply holes in 1 degree increments in the circumferential direction of the shower plate.

FIG. 7 is an explanatory diagram showing the distribution of the number of gas supply holes in 1 degree increments in the circumferential direction of the shower plate.

FIG. 8 is an explanatory diagram showing the simulation result of the flow velocity distribution in 1 degree increments in the circumferential direction of the shower plate.

FIG. 9 is an explanatory view showing the simulation result of the distribution of flow velocity in the circumferential direction for the shower plate.

FIG. 10 is a plan view showing an arrangement pattern of gas supply holes of a conventional shower plate.

FIG. 11 is a plan view showing an arrangement pattern of gas supply holes of a conventional shower plate.

FIG. 12 is a plan view showing a particle distribution on a semiconductor wafer when a conventional shower plate is used.

FIG. 13 is an explanatory diagram for explaining an estimation factor of particle generation in a conventional shower plate.

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment in which the gas supply apparatus of the present invention is incorporated in a film forming apparatus for performing film formation by plasma CVD will be described. First, the overall configuration of the film forming apparatus will be described based on the schematic diagram of FIG. In FIG. 1,! /, 2 is a processing vessel which is a vacuum chamber made of, for example, aluminum. This processing vessel 2 has a cylindrical portion 2a having a large diameter on the upper side and a cylindrical portion 2b having a small diameter on the lower side. It is formed in a mushroom shape and is provided with a heating mechanism (not shown) for heating the inner wall. In the processing container 2, there is provided a stage 21 that forms a substrate mounting table for horizontally mounting a substrate, for example, a semiconductor wafer (hereinafter referred to as a wafer) W, and this stage 21 is supported on the bottom of the small diameter portion 2b. Supported by member 22! /

[0018] In the stage 21, there are provided a heater (not shown) that forms a temperature control means for the wafer W and a conductive member (not shown) that serves as a lower electrode described later. Further, if necessary, an electrostatic chuck (not shown) for electrostatically adsorbing the wafer W is provided. Further, the stage 21 is provided with, for example, three support pins 23 for holding and lifting the wafer W so as to be able to protrude and retract with respect to the surface of the stage 21, and the support pins 23 are provided via support members 24. It is connected to the lifting mechanism 25 outside the processing container 2. One end side of an exhaust pipe 26 is connected to the bottom of the processing vessel 2, and a vacuum pump 27, which is a vacuum exhaust means, is connected to the other end side of the exhaust pipe 26. A transfer port 29 that is opened and closed by a gate valve 28 is formed on the side wall of the large-diameter portion 2 a of the processing container 2.

Furthermore, an opening 31 is formed in the ceiling of the processing container 2, and a gas shower head 4, which is a gas supply device of the present invention, is provided so as to close the opening 31 and face the stage 21. It has been. Here, the gas shower head 4 and the stage 21 also serve as an upper electrode and a lower electrode, respectively. The gas shower head 4 is connected to the high-frequency power source unit 33 through the matching unit 32, and the stage 21 as the lower electrode. Is grounded. In addition, in FIG. 1, the wiring diagram is shown in a simplified manner. Actually, the stage 21 is electrically connected to the processing container 2 and is grounded from above the processing container 2 through a matching box (not shown). The conductive path of the frequency wraps around the processing space.

As shown in FIG. 2, the gas shower head 4 includes a base member 41 made of a flat bottomed cylindrical body that closes the opening at the top of the processing container 1, and a lower side of the bottom surface of the base member 41. Set in A shower plate 5 is provided. Since the base member 41 also has a role of partitioning the vacuum atmosphere in the processing container 1 from the atmospheric atmosphere, the flange portion 42 at the upper peripheral edge and the peripheral portion 43 of the opening of the processing container 1 are ring-shaped resin seal members The O-ring 44 is airtightly joined.

[0021] In addition, two gas supply pipes 61 and 62 are connected to the central portion of the base member 41, and the gas supply holes 7 of the shower plate 5 from which the gases of the gas supply pipes 61 and 62 are separated, respectively. (7a) and 7 (7b) Forces are also configured to be ejected. That is, a diffusion plate 64 in which a space 63 communicating with one gas supply pipe 61 is formed is stacked on the shower plate 5, and the upper side of the diffusion plate 64 is connected to the other gas supply pipe 62. The space 63 is communicated and formed as a partitioned space 65. One gas supply hole 7 (7a) communicates with the space 63, and the other gas supply hole 7 (7b) communicates with the space 65. The shower plate 6 will be described in detail later.

The one gas supply pipe 61 includes, for example, a TiC14 gas source 102, an Ar gas source, as shown in FIG.

The other gas supply pipe 62 connected to the 103 and the C1F3 gas source 104 is connected to, for example, an H2 gas source 106 and an NH3 gas source 107. The portion indicated by 108 surrounded by a chain line is a group of gas supply devices such as valves and mass flow controllers provided in each gas supply path.

Next, the shower plate 5 will be described in detail. The shower plate 5 in this example is used for a 300 mm wafer, and each of them is arranged along 19 concentric circles 51 centering on the center of a circular plate body 50 as shown in FIGS. 3 and 4. Gas supply holes 7 are formed at intervals, and further, gas supply holes 7 are formed at the center of the concentric circle (the center of the shower plate 5). The gas supply holes 7 include gas supply holes 7a and 7b through which different gases blow out, but these gas supply holes 7a and 7b are alternately arranged in the circumferential direction. It will be described as hole 7. The diameter of the gas supply hole 7 is, for example, lmm. In the 19 concentric circles 51, the radius of the outermost concentric circle 51 is 163 mm, and the intervals between the concentric circles are set at equal intervals. For the number of gas supply holes 7 in each concentric circle 51, the inner cylinder J force, et al. J jet 8, 12, 18, 24, 30, 36, 42, 48, 54, 60, 66, 72, 78, 84, 90, 96, 102, 108, 114. With respect to the design method of the arrangement pattern of the gas supply holes 7, first, the gas supply holes 7 of the concentric circles 51 are once arranged so as to be aligned on the radius of the concentric circles 51, and then as shown in FIG. The gas supply holes 7 arranged on these radii are arranged along the algebraic spiral curve S extending from the center of the concentric circle 51. .

The algebraic spiral curve S is an Archimedean spiral curve expressed by r = a Θ. R and Θ are the distance in polar coordinates and the angle from the reference direction with the center of the concentric circle 51 as the zero point, and a is a variable. is there.

[0025] Regarding the arrangement pitch of the gas supply holes 7 in each concentric circle 51 and the setting of the algebraic spiral curve S, the arrangement density of the gas supply holes 7 in the minute region extending in the radial direction of the concentric circle 51 is made uniform between the respective directions. To do so. That is, as shown in FIG. 6, a belt-like region (elongated rectangular region) L that does not include the center C of the concentric circle 51 but includes the innermost concentric circle 51 and the outermost concentric circle 51 in the circumferential direction. Rotate and measure the number of gas supply holes 7 in the belt-like region L at each angular position, and obtain the distribution of the number. Figure 7 shows the distribution of the number of gas supply holes obtained by rotating the belt-like region L from 1 to 90 degrees. The width 2d d of the belt-like region L corresponds to the angular resolution, and at least the width 2d is arranged. For example, set it to 4 mm so that it is less than the pitch. As shown in FIG. 7, the number of gas supply holes 7 at each angular position is within 15-20.

The gas supply holes 7 are arranged so that the number of the gas supply holes 7 per unit area is uniform. Per unit area means that the area in the outermost concentric circle 51 is divided into square grids of 2cm x 2cm, for example (excluding the area in contact with the outermost concentric circle 51), and the gas supply hole between each divided area In this example, the minimum number of holes in each divided area is 5, and the maximum value is 7.

The processing of the wafer W in the film forming apparatus of FIG. 1 will be described. First, a wafer W, which is a substrate, is loaded into the processing container 2 via a transfer port 29 with the gate valve 28 opened by a transfer arm (not shown), and is transferred onto the stage 21 by the cooperative action with the support pins 23. After the gate valve 28 is closed, a mixed gas of TiC14 gas and Ar gas, which is the first gas, is sent from the gas supply sources 102 and 103 to the gas shower head 4 through the gas supply pipe 61, The second gas H2 gas is sent from the gas supply source 106 to the gas shower head 4 through the gas supply pipe 62. Then, the first gas and the second gas are separately supplied to the processing atmosphere from the gas supply holes 7 (7a) and (7b) of the shower plate 5.

[0028] On the other hand, the inside of the processing container 2 is evacuated by the vacuum pump 27, and a pressure adjusting valve (not shown) provided in the exhaust pipe 26 is adjusted to set the pressure in the processing container 2 to the set pressure, and the high frequency power supply unit High-frequency power is supplied from 33 to the gas showerhead 4 as the upper electrode and the stage 21 as the lower electrode from 33, and the processing gas, that is, the first gas and the second gas are made into plasma, and TiC14 is converted into H2 by H2. Reduce and deposit a Ti film on the surface of wafer W. At this time, HC1, which is a reaction byproduct, is exhausted together with the unreacted gas.

[0029] In some cases, a TiN film is formed by nitriding the Ti film following the formation of the Ti film. In this case, the TiC14 gas as the first gas and the H2 gas as the second gas are used. Stop supplying and start supplying NH 3 (ammonia) gas. Even at this time, high frequency power is supplied to the processing space, and the surface of the Ti thin film already formed on the wafer W is nitrided by the active species of NH3. After nitriding is completed, the supply of high-frequency power and the supply of NH3 gas are stopped, and then the wafer W is unloaded from the processing container 2 by the reverse operation to the loading operation described above.

[0030] The effect of the shower plate 5 will be described. The conventional shower plate has only focused on the number of gas supply holes per unit area. However, in the shower plate 5 of the above-described embodiment, the central portion force on the wafer W, the outer peripheral force, and the gas Focusing on the relationship between the occurrence of the region where the flow velocity of the gas flow is extremely slow and the arrangement pattern of the gas supply holes 7 in the radial direction (including the radial direction as is clear from FIG. 10). As seen from the central part of the shaft 5, the gas flow velocity in each direction is roughly aligned.

Specifically, the number of gas supply holes 7 is arranged on a large number of concentric circles 51, and the gas supply holes 7 are arranged at equal intervals for each concentric circle 51. The reason why the intervals are equal is that the number of the gas supply holes 7 is made uniform per unit area. In order to eliminate the strip-shaped blank area shown in FIG. 12 in the background art column, any concentric circle 51 except the outermost and innermost circumferences is connected to the gas supply hole 7 on the concentric circle 51 and the inner side. The concentric circles 51 adjacent to each other and the gas supply holes 7 immediately adjacent to the concentric circles 51 adjacent to the outside are not aligned on the radius of the concentric circles 51, that is, The concentric circles 51 adjacent to each other should be designed so that the three gas supply holes 7 are on the radius! /. In order to obtain such an arrangement pattern, in this embodiment, the gas supply holes 7 of the concentric circles 51 are shifted using a spiral curve as described above.

[0032] FIG. 8 is a diagram illustrating the rotation of the belt-like region L shown in FIG. 6 in the circumferential direction in increments of 1 degree, and the directional force and flow velocity from the center of the concentric circle 51 in the belt-like region L to the outer periphery. The flow velocity distribution in the circumferential direction obtained by this calculation is shown. Specifically, the shower plate is divided into three concentric circles by four circles with radii of 170 mm, 120 mm, 60 mm, and 40 mm, and a, b, and c indicate the flow velocity distribution in these divided regions, respectively. Regarding the flow velocity distribution, the flow rate per unit area is obtained from the number of gas supply holes 7 present in each of the three divided regions, and the flow rate and the number of gas supply holes 7 in the band-like region at the corresponding angle are obtained from The flow velocity in each angular region (band region L) was calculated.

This flow velocity distribution corresponds to the distribution of the number of gas supply holes shown in FIG. 7, and it can be seen that the flow velocity in each direction is uniform. Fig. 9 shows the in-plane flow velocity distribution on wafer W, which is obtained by color coding and copied as a black and white image. Fig. 9 (a) uses the shower plate 5 of the above embodiment. Figure 9 (b) shows the results when using a shower plate (see Figure 10) with gas supply holes arranged in a matrix. As can be seen from this result, in the conventional shower plate, the region where the flow velocity is extremely small is formed in a cross shape, which corresponds to the cross-shaped particle adhesion pattern on the wafer W as described in the background section. is doing. Therefore, the cause of the cross-shaped particle adhesion pattern corresponds to the arrangement pattern of the gas supply holes of the shower plate through the result of the flow velocity distribution.

[0034] On the other hand, in the shower plate 5 of the above-described embodiment, the circumferential flow velocities are generally uniform, and since the region where the flow velocities are extremely slow is not seen, the occurrence of the cross-shaped particle adhesion pattern is eliminated. Is done. For this reason, restrictions on the process conditions are relaxed, so that the degree of freedom in setting process conditions is widened. For example, it is possible to set conditions such as increasing the gas flow rate to improve throughput.

[0035] The gas shower head 4 described above is a post-mix type that supplies the first gas and the second gas separately into the processing container 2, and mixes both gases in advance before processing. Atmosphere It can also be applied to a premix type that supplies air.

In addition, the present invention is not limited to Ti film formation. When performing gas processing such as film formation under high temperature performed in a semiconductor manufacturing process, for example, metals such as W, Cu, Ta, Ru, and Hf, Or it can be applied to the formation of thin films such as metal compounds such as TiN, TiSi, and WSi, or insulating films such as SiN and Si02. Furthermore, the substrate processing apparatus to which the gas showerhead of the present invention is applied is not limited to a plasma CVD apparatus, but can be applied to a thermal CVD apparatus, an etching apparatus, an ashing apparatus, a sputtering apparatus, an annealing apparatus, and the like.

Claims

The scope of the claims

[1] A shower plate that is arranged to face the mounting table in order to supply processing gas into a processing container provided with a mounting table on which a substrate is mounted, and is provided with a number of gas supply holes. A gas supply device equipped with! /,

The gas supply holes are arranged on a number of concentric circles,

The gas supply hole arrangement pattern is such that, for any concentric circle except the outermost and innermost circumferences, the gas supply holes on the concentric circle, the concentric circles adjacent to the inner side, and the concentric circles adjacent to the outer side are the nearest gas. Gas supply port, characterized in that the supply holes do not line up on a concentric radius.

2. The gas supply device according to claim 1, wherein the number of gas supply holes per unit area is uniform.

[3] The arrangement pattern of the gas supply holes is:

For each concentric circle, gas supply holes are arranged at equal intervals in the circumferential direction, and one gas supply hole of each concentric circle is once arranged so as to be aligned on the radius of the concentric circle, and the gas supply holes aligned on the radius are concentric. 2. The gas supply apparatus according to claim 1, wherein the gas supply apparatus is formed by rearranging the arrangement pitches in the circumferential direction at equal intervals so as to be arranged along an algebraic spiral curve extending from the center of the gas.

[4] A concentric circle in which the gas supply holes are arranged at the first pitch, a concentric circle in which the gas supply holes are positioned outside the concentric circle and arranged in a second pitch wider than the first pitch, and a concentric circle from the concentric circles. 2. The gas supply device according to claim 1, wherein there are concentric circles that are located outside and in which the gas supply holes are arranged at a third pitch that is narrower than the second pitch.

[5] The airtight processing container, the mounting table provided in the processing container for mounting the substrate, the exhaust means for exhausting the gas in the processing container, and any one of claims 1 to 4 A substrate processing apparatus comprising: a gas supply device according to claim 1; and a substrate on the mounting table is processed by a processing gas supplied from the gas supply device.