WO2007136043A1 - Élément d'antenne planaire et dispositif de traitement par plasma utilisant ledit élément - Google Patents

Élément d'antenne planaire et dispositif de traitement par plasma utilisant ledit élément Download PDF

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Publication number
WO2007136043A1
WO2007136043A1 PCT/JP2007/060389 JP2007060389W WO2007136043A1 WO 2007136043 A1 WO2007136043 A1 WO 2007136043A1 JP 2007060389 W JP2007060389 W JP 2007060389W WO 2007136043 A1 WO2007136043 A1 WO 2007136043A1
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WIPO (PCT)
Prior art keywords
slot
plate
pairs
planar antenna
microwave
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PCT/JP2007/060389
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English (en)
Japanese (ja)
Inventor
Caizhong Tian
Kinya Ota
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of WO2007136043A1 publication Critical patent/WO2007136043A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/0006—Particular feeding systems
    • H01Q21/0012—Radial guide fed arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/364—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith using a particular conducting material, e.g. superconductor
    • H01Q1/366—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith using a particular conducting material, e.g. superconductor using an ionized gas

Definitions

  • the present invention relates to a plasma processing apparatus used when processing is performed by applying plasma generated by a microwave or high frequency to a semiconductor wafer or the like, and a planar antenna member used therefor.
  • a plasma processing apparatus is used for processes such as film formation, etching, and ashing in the manufacturing process of semiconductor products.
  • a plasma can be stably formed even in a high vacuum state where the pressure is relatively low, from about 0.1 lmTorr (13.3 mPa) to several lOmTorr (several Pa).
  • a plasma processing apparatus for generating is used.
  • FIG. 7 is a schematic configuration diagram showing a conventional general plasma processing apparatus using microwaves.
  • the plasma processing apparatus 2 includes a processing container 4 that can be evacuated, and a mounting table 6 that is provided in the processing container 4 and on which a semiconductor wafer W is mounted.
  • a ceiling plate 8 made of a disk-shaped aluminum nitride, quartz, or the like that transmits microwaves is provided in an airtight manner on the ceiling facing the substrate.
  • a gas nozzle 9 for introducing a predetermined gas into the container is provided on the side wall of the processing container 4.
  • a disk-shaped planar antenna member 10 having a thickness of about several millimeters on the top surface of the top plate 8, and an example for reducing the wavelength of the microwave in the radial direction of the planar antenna member 10 is dielectric.
  • Slow wave material 12 consisting of body is installed.
  • the planar antenna member 10 is formed with a large number of microwave radiation holes 14 made of, for example, long groove-like through holes.
  • the microphone mouth wave radiation holes 14 are generally arranged concentrically or spirally.
  • the central conductor 18 of the coaxial waveguide 16 is formed at the center of the planar antenna member 10. For example, a microwave of 2.45 GHz generated from the microwave generator 20 is converted into a predetermined vibration mode by the mode converter 22 and then guided.
  • microwaves are emitted from the microwave radiation holes 14 provided in the planar antenna member 10, and transmitted through the top plate 8, Microwave is introduced into the lower processing container 4.
  • plasma is generated in the processing space S in the processing container 4 by the microwave, and the semiconductor wafer W is subjected to predetermined plasma processing such as etching and film formation.
  • Patent Document 1 Japanese Patent Laid-Open No. 3-191073
  • Patent Document 2 JP-A-5-343334
  • Patent Document 3 Japanese Patent Laid-Open No. 9-181052
  • Patent Document 4 Japanese Patent Laid-Open No. 2003-332326
  • the plasma be set up uniformly in the in-plane direction of the processing space S.
  • a large number of microwave radiation holes 14 are provided relatively uniformly on both the center side and the peripheral side of the planar antenna member 10, and the microwave radiation holes 14 provided in this way are provided in a relatively uniform manner. The microwaves are emitted toward the processing space S below.
  • the pitch of the microwave radiation holes 14 in the radial direction of the planar antenna member 10 is set to a value that allows microwaves propagating here to interfere with each other and efficiently radiate.
  • planar antenna member 10 when the microwave propagates the central conductor 18 side force in the radial direction of the planar antenna member 10, the planar antenna member 10 and A standing wave may occur in the slow wave material 12. For this reason, the strength of the electric field distribution of the microwave becomes fixed, and the electric field distribution of the microwave in the processing space S becomes non-uniform.
  • An object of the present invention is to provide a planar antenna in which the plasma density is made uniform by rotating the electric field radiated from the microwave radiation hole in the circumferential direction of the planar antenna member.
  • An object is to provide a member and a plasma processing apparatus using the same.
  • the present invention includes an antenna plate made of a conductive metal plate having a center, and is used for two long-groove microwave radiations that are directed in directions different from each other and close to each other.
  • a plurality of slot pairs each including a slot are provided, and the plurality of slot pairs are arranged in multiple rows along a plurality of concentric circles on the antenna plate, and the number of slot pairs located in the innermost row is within eight or less. It is a planar antenna member characterized by becoming.
  • a plurality of sets of slot pairs are concentrically arranged, and the slot pair located at the innermost circumference is within eight sets, so that the electric field radiated from the microwave radiation hole can be reduced.
  • the plasma density can be made uniform by rotating in the circumferential direction of the planar antenna member.
  • the present invention is characterized in that the slot pair located on the innermost periphery is spaced from the center side of the antenna plate by a wavelength of microwaves (one wavelength) propagating therethrough. It is a planar antenna member.
  • the distance between the concentric circles in which the slot pairs are arranged in the radial direction of the antenna plate is set to a length longer than ⁇ 2 of the wavelength of the microwaves propagating thereto.
  • the present invention provides the planar antenna member, wherein the slot has a width of 6 mm or more.
  • the present invention is characterized in that, among the slot pairs arranged concentrically, the number of pairs of slot pairs arranged in the outermost row is set within a range of 18 to 36 sets. It is a planar antenna member.
  • the present invention is the planar antenna member characterized in that the frequency of the microwave is 2.45 GHz.
  • the present invention provides a processing container having an opening in the ceiling so that the inside can be evacuated, a mounting table provided in the processing container for mounting an object to be processed, A top plate made of a dielectric material hermetically attached to the opening and transmitting electromagnetic waves, a planar antenna member provided on the top surface of the top plate, a microwave supply means connected to the planar antenna member, Gas introduction means for introducing a predetermined gas into the processing container, and the planar antenna member includes an antenna plate having a center and made of a conductive metal plate, and is connected to the antenna plate.
  • a plurality of slot pairs each having two long groove-shaped slots for microwave radiation that are directed in different directions and are close to each other are provided, and the plurality of slot pairs are provided on the antenna plate along a plurality of concentric circles.
  • the plasma processing apparatus is characterized in that it is arranged in multiple rows and the slot pairs located in the innermost row are within 8 pairs.
  • the present invention is characterized in that the slot pair located on the innermost circumference is spaced from the center side of the antenna plate by a wavelength of microwaves (one wavelength) propagating therethrough. It is a plasma processing apparatus.
  • the distance between the concentric circles in which the slot pairs are arranged in the radial direction of the antenna plate is set to a length larger than ⁇ 2 of the wavelength of the microwaves propagating thereto. Is a plasma processing apparatus.
  • the present invention is the plasma processing apparatus, wherein the slot has a width of 6 mm or more.
  • the present invention is characterized in that, among the slot pairs arranged concentrically, the number of pairs of slot pairs arranged in the outermost row is set within a range of 18 to 36 sets.
  • This is a plasma processing device.
  • the present invention is the plasma processing apparatus, wherein the microwave frequency is 2.45 GHz.
  • a plurality of pairs of slots are concentrically arranged, and the slot pair located on the innermost circumference is within eight pairs. Since it did in this way, the electric field radiated
  • FIG. 1 is a configuration diagram showing a plasma processing apparatus according to the present invention.
  • FIG. 2 is a plan view showing a planar antenna member.
  • FIG. 3 is an enlarged plan view for explaining a distance related to the slot of the planar antenna member.
  • FIG. 4 is a plan view showing another example of the arrangement of slot pairs.
  • Figure 5 shows the number of innermost slot pairs of 8 when the microwave frequency is 2.45 GHz. It is a figure for demonstrating that electric field distribution rotates when it sets below.
  • FIGS. 6 (A), 6 (B), and 6 (C) are photographs showing the electric field distribution by simulation of the antenna plate of the planar antenna member of the device of the present invention.
  • FIG. 7 is a schematic configuration diagram showing a conventional general plasma processing apparatus using a microwave.
  • FIG. 1 is a block diagram showing a plasma processing apparatus according to the present invention
  • FIG. 2 is a plan view showing a planar antenna member
  • FIG. 3 is an enlarged plan view for explaining a distance related to a slot of the planar antenna member.
  • a plasma etching process is performed as a plasma process will be described as an example.
  • a plasma processing apparatus 32 that performs an etching process using plasma includes, for example, a processing container 34 that is formed of a conductor such as aluminum on the side wall and the bottom and is formed into a cylindrical shape as a whole. ing.
  • the inside of the processing vessel 34 is a sealed processing space S, and plasma is formed in the processing space S.
  • This processing vessel 34 itself is grounded.
  • a mounting table 36 on which, for example, a semiconductor wafer W as a target object is mounted is accommodated on the upper surface.
  • the mounting table 36 is formed in a substantially disc shape made flat by a ceramic such as alumina, and is erected from the bottom of the container via a column 38 made of, for example, aluminum.
  • a gate valve 40 that opens and closes when a wafer is loaded into and unloaded from the inside of the processing vessel 34 is provided on the side wall of the processing vessel 34.
  • an exhaust port 42 is provided at the bottom of the container, and this exhaust port 42 is connected to an exhaust path 48 to which a pressure control valve 44 and a vacuum pump 46 are sequentially connected.
  • a pressure control valve 44 and a vacuum pump 46 are sequentially connected.
  • the mounting table 36 there are provided a plurality of, for example, three lifting pins 50 (only two are shown in FIG. 1) for lifting and lowering the wafer W when it is loaded and unloaded. Elevating The pin 50 is moved up and down by an elevating rod 54 penetrating the bottom of the container through an extendable bellows 52. Further, the mounting table 36 is formed with a pin through hole 56 through which the elevating pin 50 is inserted.
  • the entire mounting table 36 is made of a heat-resistant material, for example, a ceramic such as alumina, and a thin plate-like resistance heater 58 is embedded in the ceramic as a heating means. The resistance heater 58 is connected to a heater power source 62 through a wiring 60 that passes through the column 38.
  • a thin electrostatic chuck 66 having conductor wires 64 disposed in, for example, a mesh shape is provided on the upper surface side of the mounting table 36.
  • the wafer W placed on the electrostatic chuck 66 is attracted by the electrostatic chuck 66 by electrostatic attraction force.
  • the conductor wire 64 of the electrostatic chuck 66 is connected to a DC power source 70 via a wiring 68 in order to exert the electrostatic attraction force.
  • the wiring 68 is connected to a bias high-frequency power source 72 in order to apply a bias high-frequency power of 13.56 MHz to the conductor wire 64 of the electrostatic chuck 66 at the time of etching.
  • the ceiling portion of the processing vessel 34 is opened, and for example, a quartz plate, Al 2 O 3 or the like is used here.
  • a top plate 74 having transparency for microwaves made of a ceramic material is provided airtightly through a seal member 76 such as an O-ring.
  • the thickness of the top plate 74 is set to about 20 mm, for example, in consideration of pressure resistance.
  • a gas introducing means 78 for supplying necessary gas into the processing vessel 34 is provided on the side wall of the vessel directly below the top plate 74.
  • the gas introduction means 78 has a gas nozzle 80 made of, for example, quartz provided through the side wall of the container, and various kinds of necessary gases can be supplied from the gas nozzle 80 while controlling the flow rate. It is summer.
  • the gas introduction means 78 for example, a shower head structure in which stone pipes having a large number of gas holes are assembled in a lattice shape may be employed.
  • the present invention introduces a microwave for plasma generation into the processing space S of the processing vessel 34 through the top plate 74 in order to generate plasma in the processing vessel 34 on the upper surface of the top plate 74.
  • the planar antenna member 82 characterized by the above is provided, and the planar antenna member 82 is connected to a microwave supply means 84 for supplying microwaves thereto.
  • the planar antenna member 82 has a disk-shaped antenna plate 88 made of a conductive metal plate in which a plurality of microwave radiation slots 86 are formed. This antenna The structure of the plate 88 will be described later.
  • the microwave supply means 84 has a slow wave material 90 disposed on the antenna plate 88.
  • the slow wave material 90 is made of, for example, quartz, alumina, aluminum nitride or the like, and has a high dielectric constant characteristic in order to shorten the wavelength of the microphone mouth wave, and is preferably made of the same material as the top plate 74.
  • the antenna plate 88 is configured as a bottom plate of a wave guide box 92 made of a conductive hollow cylindrical container covering the entire upper surface of the slow wave material 90, and is made to face the mounting table 36 in the processing container 34.
  • a cooling jacket 94 is provided above the waveguide box 92 to flow a cooling medium in order to cool it.
  • the peripheral portions of the waveguide box 92 and the antenna plate 88 are both conducted to the processing vessel 34, and the outer tube 96 A of the coaxial waveguide 96 is connected to the center of the upper portion of the waveguide box 92. ing.
  • This inner inner conductor 96B is connected to the center portion of the antenna plate 88 through, for example, a tapered (conical) connector 97 through the center through-hole of the slow wave member 90.
  • the coaxial waveguide 96 is connected to a rectangular waveguide 99 via a mode converter 98, and the rectangular waveguide 99 is connected to a microwave generator 102 of 2.45 GHz, for example. Propagates microwaves to the antenna plate 88.
  • the microwave generator 102 and the antenna plate 88 are connected by the rectangular waveguide 99 and the coaxial waveguide 96 so as to propagate microwaves.
  • a matching circuit 104 is provided in the middle of the rectangular waveguide 99 for impedance matching.
  • the frequency is not limited to 2.45 GHz, and other frequencies, for example, 8.35 GHz may be used.
  • the antenna plate 88 of the planar antenna member 82 will be described in detail.
  • the antenna plate 88 is a disc having a center C, and is made of a conductive material having a diameter of 400 to 500 mm and a thickness of 1 to several mm, for example, for a wafer having a size of 300 mm.
  • the surface is made of a copper plate or an aluminum plate plated with silver, and a plurality of microwave slots 86 each having, for example, a long groove-like through hole are formed in the disk.
  • Each of these slots 86 forms one set, that is, a slot pair 100, by two slots 86 arranged in a "c" shape.
  • the above-mentioned slot pair 100 consisting of two slots 86 is arranged in multiple rows L and L along a plurality of concentric circles, and the innermost circumference.
  • the slot pair 1 00 is the slot pair 100A in the inner circumferential side (innermost circumferential side) row L and the outer row (second round) row L slot 100A.
  • the number of pairs of slot pairs 100B to be set is set within a range of 18 to 36, and the slot pairs 100B are arranged at equal intervals along the circumferential direction of the antenna plate 88. In FIG. 2, 24 pairs (pieces) of slot pairs 100B in the second row L are arranged.
  • the number of slot pairs 100B in the row L (outermost circumference side) of row L takes the following matters into consideration.
  • the pair of slots 100A located in the innermost row L is the center side force of the antenna plate 88, and ⁇ (1 (Wavelength) or more apart.
  • the wavelength is not the wavelength of the propagating microwave in vacuum, but the wavelength when the wavelength of the microwave is shortened by the slow wave material 90.
  • the distance HI between the center side of the antenna plate 88 and the slot pair 100A is equal to the outer circumference of the connector 97 at the center of the antenna plate 88 and the vertical 2 of each of the two slots 86 forming the slot pair 100A. This is the distance from the intersection P1 of the equipartition line. Therefore, the distance relationship is expressed as Further, it is preferable that the distance H2 between the center C of the connector 97 and the intersection point PI is set to a length of 1.5 ⁇ or more.
  • the distance between the slot pair 100 in the radial direction of the antenna plate 88 that is, the concentric circle R2 connecting the position ⁇ 2 of each slot pair 100B in the second circumference in the radial direction of the antenna plate 88, Difference in radius from concentric circle R1 that connects position P1 of each inner slot pair 100A ⁇ 3 (For the sake of simplicity, distance ⁇ 3 will be referred to as the innermost row L slot pair and the second row L The distance from the slot pair of
  • the length can be set to a length that is larger than ⁇ 2 or smaller than ⁇ 2.
  • the microwaves radiated from both slot pairs 100A and 100B are out of phase with each other and cancel each other out.
  • the distance ⁇ 3 is smaller than ⁇ 2, abnormal discharge may occur, so the value of ⁇ 3 is preferably larger than ⁇ 2.
  • the positions Pl and ⁇ 2 are the intersections of the perpendicular bisectors of the two slots 86 constituting each slot pair 100A and 100B as described above.
  • the slot pair 100B in the row L in the second circumference is used.
  • the antenna plate 88 it is preferable to position the antenna plate 88 within a range of 120 to 200 mm from the center of the antenna plate 88 (diameter force of about 08 mm).
  • the width 11 of all the slots 86 included in each of the slot pairs 100A and 100B is preferably set to 6 mm or more. This is because when the width 11 is smaller than 6 mm, abnormal discharge easily occurs here. In this case, the power supplied to the planar antenna member 82 is about 2000 to 4500 W (watts), and the abnormal discharge is likely to occur regardless of the microwave frequency when the width 11 is smaller than 6 mm. .
  • the slot pair 100 has two slots 86 arranged in a so-called "tapped shape" as an example. As shown, the slot pair 100 can be applied to a case where the two slots 86 are slightly separated and arranged in a so-called “T” shape. Even in this case, each distance H1-H3 Intersections Pl and P2 that define the vertical bisectors of the two slots 86 as shown in the figure.
  • the overall operation of the plasma processing apparatus 32 configured as described above is controlled by the control means 120 made of, for example, a microcomputer.
  • the computer program to be executed is stored in a storage medium 122 such as a floppy disk, a CD (Compact Disc), a flash memory or a node disk. Specifically, supply of each gas and flow control, supply of microwaves and high frequency, power control, control of process temperature and process pressure, and the like are performed according to commands from the control means 120.
  • the semiconductor wafer W is accommodated in the processing container 34 by the transfer arm (not shown) via the gate valve 40, and the wafer W is moved to the upper surface of the mounting table 36 by moving the lifting pins 50 up and down.
  • the wafer W is mounted on the mounting surface, and the wafer W is electrostatically attracted by the electrostatic chuck 66.
  • the wafer W is maintained at a predetermined process temperature by a resistance heater 58, and a predetermined gas such as C1 gas, O gas, and N gas, for example, a gas source (not shown) is set to a predetermined temperature.
  • the gas nozzle 80 of the gas introduction means 78 is supplied to the processing space S in the processing container 34 at a flow rate, and the pressure control valve 44 is controlled to maintain the processing container 34 at a predetermined process pressure.
  • the microwave generated by the microwave generator 102 is converted into the rectangular waveguide 99 and the coaxial waveguide 96. Then, it is supplied to the antenna plate 88 of the planar antenna member 82 to introduce the microwave whose wavelength is shortened by the retardation material 90 into the processing space S, thereby generating a plasma in the processing space S to generate a predetermined plasma. Etching process using is performed.
  • the etching target layer formed on the surface of the wafer W is etched and removed by the active species generated at this time. Then, each of the gases flows downward while being diffused substantially evenly around the mounting table 36, and is discharged from the exhaust path 48 through the exhaust port 42.
  • the conductor wire 6 in the electrostatic chuck 66 from the high frequency power supply 72 for bias is used. A high frequency for bias is applied to 4 so that active species and the like are drawn into the wafer surface with good straightness so that the etching shape is not collapsed as much as possible.
  • the 2.45 GHz microwave supplied through the connector 97 at the center of the antenna plate 88 is propagated radially from the center of the antenna plate 88 toward the periphery, and then A microwave is emitted from lot 86 toward processing space S below.
  • the antenna plate 88 has slot pairs arranged in multiple rows L and L along a plurality of concentric circles, and
  • the number of pairs of slots 100A located in the innermost row L is reduced to 8 or less, and here 5 is set, so the electric field distribution force of microwaves radiated from each slot pair 100A and 100B
  • the antenna plate 88 rotates around the center at a high speed.
  • the antenna plates 88 and A standing wave due to interference between the pair of slots is generated in the slow wave material 90, and the electric field distribution generated due to this is fixed without rotating, and thus the density of the plasma density is generated.
  • the number of slot pairs 100A in the innermost circumferential row L is set to 8 or less, that is, the opening angle ⁇ 1 between adjacent slot pairs 100A is ⁇ ⁇ 4 (angular velocity Therefore, the microwave that propagates the central force of the antenna plate 88 to the peripheral part is not a standing wave but a traveling wave. As a result, the electric field distribution of the microwave is as described above. Will rotate at high speed. Therefore, the plasma density in the processing space S can be made uniform.
  • FIG. 5 is a diagram for explaining that the electric field distribution rotates when the number of slot pairs 100A in the innermost row L is set to 8 or less when the microwave frequency is 2.45 GHz. It is.
  • the antenna plate 88 is divided by the number of slot pairs 100A in the innermost row L as shown by the dotted line, and this division is made one sector. In this sector, microwaves propagate from the center of the antenna to the slot pair S1 ⁇ S2 ⁇ S3 ⁇ S4, and during this time, all of the microphone mouth wave power (energy) is radiated and no reflection occurs. To do.
  • the maximum number of slot pairs in the innermost row L is set to 8 because the opening angle ⁇ 1 is required to be 45 degrees or more in order to suppress the mutual interference of the radiated electric field between the slot pairs. .
  • One innermost The slot pair 100A in the circumferential row L does not interfere with the plurality of outermost row L slot pairs 100B.
  • the number of slot pairs in the outermost row L is the original microwave transmission.
  • Propagation power of microwave power between slot pair S1 and S2 which is the carrying path The propagation amount between slot pair S5 belonging to a sector different from slot pair S1 is sufficiently large (at least 5 times or more) Set to a number. For this purpose, an opening between adjacent slot pairs in the outermost row L is adjacent.
  • the angle ⁇ 2 (see Fig. 2) must be 10 degrees or more, that is, above the logarithmic number of slots in the outermost row L
  • the limit is 36. Also, the lower limit of the number of 100B pairs of slots in the outermost row L is required.
  • the plasma electron density is 8 ⁇ 10 1G Zcm 3 or more, so 18 is required.
  • the distance from 0B (corresponding to H3 in Fig. 3) is, for example, (5Z4) ⁇ ⁇ , and the angle between the pair of slots on the outermost row L is 15 degrees, for example, the slot pair through which microwaves propagate
  • the distance HI between the outer periphery of the connector 97 of the antenna plate 88 and the slot pair 100A in the innermost row L is set to a length of one wavelength or more, and the center C of the antenna plate 88 is Since the distance H2 between the slot pair 100A in the inner circumferential row L is set to a length of 1.5 ⁇ or more, the above-mentioned microwave electric field distribution rotates more smoothly and at a higher speed, and the processing space The plasma density in S can be made more uniform.
  • the antenna plate 88 of the planar antenna member 82 of the device of the present invention was evaluated by simulation, the evaluation result will be described. For comparison, the antenna plate of the conventional device was also evaluated.
  • FIG. 6 (A) shows a comparative example of the conventional apparatus
  • FIGS. 6 (B) and 6 (C) show Examples 1 and 2 of the apparatus of the present invention, respectively.
  • a picture of the slot pattern and the electric field distribution is shown, and a schematic diagram of the electric field distribution is shown for easy understanding.
  • the circumference of the microwave All wave numbers are 2.45GHz.
  • the antenna plate of the conventional device shown in Fig. 6 (A) is provided with two rows of slot pairs concentrically, with 20 slot pairs arranged on the innermost circumference, and on the second circumference. Has 36 slot pairs. In this case, a concentric fixed electric field distribution is formed, and since the electric field distribution is fixed, concentric shading is generated in the plasma density, which is not preferable.
  • the slot pairs 100 are arranged in two concentric rows.
  • the present invention is not limited to this, and the slot pairs 100 are concentric depending on the size of the antenna plate 88. Three or more rows may be arranged in a circle.
  • the wavelength of the microwave in the slow wave material is considerably shortened compared to the case of quartz. It is possible to arrange three pairs of pairs. In this case, an intermediate slot pair (second row) is arranged between the innermost slot pair and the outermost (third row) slot pair. As described above, Pl, P2, and H1 to H3 are determined for the innermost slot pair and the second row slot pair. Also, let H4 be the distance between each slot pair in the second row and the slot pair in the third row.
  • H4 is the difference in radius between the concentric circles connecting P3 and the concentric circles connecting the positions P2 of each slot pair in the second row, where the position of each slot pair in the third row is P3 (not shown). It is.
  • the relationship between H1-H4 and the microwave wavelength is Hl ⁇ e, H2 ⁇ l. 5) H3> ⁇ ⁇ 2 and H4> ⁇ ⁇ 2.
  • the number of slot pairs in each row is 2 ⁇ the number of innermost slot pairs ⁇ 8, 4 ⁇ the number of slot pairs in the second row ⁇ 18, 18 ⁇ the number of slot pairs in the third row (outermost) Number ⁇ 36. Note that it is possible to provide the second row of slot pairs in terms of space, but this need not be provided.
  • the power described by taking plasma etching as an example of plasma processing is not limited to this, and the present invention is applied to all plasma processing such as plasma sputtering processing, plasma CVD processing, and plasma ashing processing. be able to.
  • the present invention is not limited thereto, and the present invention can also be applied to a glass substrate, a ceramic substrate, or the like.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

La présente invention concerne une antenne planaire pouvant faire tourner circonférentiellement un champ électrique généré par des trous de rayonnement de micro-ondes autour de l'élément d'antenne planaire pour uniformiser la densité d'un plasma. L'élément d'antenne planaire comprend une plaque d'antenne (88) constituée d'une plaque métallique électriquement conductrice. Une pluralité de paires d'encoches (100) est réalisée dans la plaque d'antenne (88). La paire d'encoches (100) est constituée de deux encoches de rayonnement de micro-ondes en forme de sillons (86) qui sont dirigées dans des directions différentes. De nombreuses paires d'encoches (100) sont disposées le long d'une pluralité de cercles coaxiaux et le nombre de paires d'encoches (100) définies autour du cercle le plus intérieur ne dépasse pas huit.
PCT/JP2007/060389 2006-05-22 2007-05-21 Élément d'antenne planaire et dispositif de traitement par plasma utilisant ledit élément WO2007136043A1 (fr)

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JP2006140988A JP4997826B2 (ja) 2006-05-22 2006-05-22 平面アンテナ部材及びこれを用いたプラズマ処理装置
JP2006-140988 2006-05-22

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WO2007136043A1 true WO2007136043A1 (fr) 2007-11-29

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009224455A (ja) * 2008-03-14 2009-10-01 Tokyo Electron Ltd 平面アンテナ部材およびこれを備えたプラズマ処理装置
CN101833239A (zh) * 2009-03-10 2010-09-15 东京毅力科创株式会社 基板处理方法
JP5422396B2 (ja) * 2008-01-31 2014-02-19 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
WO2014054443A1 (fr) * 2012-10-03 2014-04-10 東京エレクトロン株式会社 Antenne et appareil de traitement au plasma

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5297885B2 (ja) * 2008-06-18 2013-09-25 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
WO2012023402A1 (fr) * 2010-08-20 2012-02-23 東京エレクトロン株式会社 Procédé de fabrication de groupement de microlentilles et groupement de microlentilles

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002050615A (ja) * 2000-08-04 2002-02-15 Tokyo Electron Ltd ラジアルアンテナ及びそれを用いたプラズマ装置
JP2002329716A (ja) * 2001-04-27 2002-11-15 Canon Inc プラズマ処理装置、プラズマ処理方法および素子の製造方法
JP2003133232A (ja) * 2001-10-19 2003-05-09 Naohisa Goto マイクロ波プラズマ処理装置、マイクロ波プラズマ処理方法及びマイクロ波給電装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03191073A (ja) * 1989-12-21 1991-08-21 Canon Inc マイクロ波プラズマ処理装置
JPH05343334A (ja) * 1992-06-09 1993-12-24 Hitachi Ltd プラズマ発生装置
JP3233575B2 (ja) * 1995-05-26 2001-11-26 東京エレクトロン株式会社 プラズマ処理装置
JP4076645B2 (ja) * 1998-12-01 2008-04-16 東京エレクトロン株式会社 マイクロ波プラズマ処理装置及びその処理方法
JP3496560B2 (ja) * 1999-03-12 2004-02-16 東京エレクトロン株式会社 プラズマ処理装置
JP4338355B2 (ja) * 2002-05-10 2009-10-07 東京エレクトロン株式会社 プラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002050615A (ja) * 2000-08-04 2002-02-15 Tokyo Electron Ltd ラジアルアンテナ及びそれを用いたプラズマ装置
JP2002329716A (ja) * 2001-04-27 2002-11-15 Canon Inc プラズマ処理装置、プラズマ処理方法および素子の製造方法
JP2003133232A (ja) * 2001-10-19 2003-05-09 Naohisa Goto マイクロ波プラズマ処理装置、マイクロ波プラズマ処理方法及びマイクロ波給電装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5422396B2 (ja) * 2008-01-31 2014-02-19 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
JP2009224455A (ja) * 2008-03-14 2009-10-01 Tokyo Electron Ltd 平面アンテナ部材およびこれを備えたプラズマ処理装置
CN101833239A (zh) * 2009-03-10 2010-09-15 东京毅力科创株式会社 基板处理方法
CN101833239B (zh) * 2009-03-10 2013-06-05 东京毅力科创株式会社 基板处理方法
WO2014054443A1 (fr) * 2012-10-03 2014-04-10 東京エレクトロン株式会社 Antenne et appareil de traitement au plasma
KR20150063036A (ko) * 2012-10-03 2015-06-08 도쿄엘렉트론가부시키가이샤 안테나 및 플라즈마 처리 장치
US10083819B2 (en) 2012-10-03 2018-09-25 Tokyo Electron Limited Antenna and plasma processing apparatus
KR102068861B1 (ko) 2012-10-03 2020-01-21 도쿄엘렉트론가부시키가이샤 안테나 및 플라즈마 처리 장치

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