WO2007135146A1 - Composant semi-conducteur et dispositif redresseur - Google Patents

Composant semi-conducteur et dispositif redresseur Download PDF

Info

Publication number
WO2007135146A1
WO2007135146A1 PCT/EP2007/054939 EP2007054939W WO2007135146A1 WO 2007135146 A1 WO2007135146 A1 WO 2007135146A1 EP 2007054939 W EP2007054939 W EP 2007054939W WO 2007135146 A1 WO2007135146 A1 WO 2007135146A1
Authority
WO
WIPO (PCT)
Prior art keywords
diodes
silicon
hjd
heterojunction
semiconductor
Prior art date
Application number
PCT/EP2007/054939
Other languages
German (de)
English (en)
Inventor
Richard Spitz
Alfred Goerlach
Gert Wolf
Ning Qu
Markus Mueller
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Priority to EP07729378A priority Critical patent/EP2030242A1/fr
Publication of WO2007135146A1 publication Critical patent/WO2007135146A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors

Definitions

  • the invention relates to a semiconductor component according to the feature combination of claim 1 and a rectifier arrangement comprising a number of such semiconductor components.
  • Rectifier AC bridges which are usually composed of at least six semiconductor diodes with a pn junction made of silicon. These silicon semiconductor diodes are designed for operation at high currents, for example at a current density of more than 500 A / cm.sup.2 and high temperatures. For example, the junction temperature can be up to 225 ° C. Typically, the voltage drop in such conventional diodes in the flow direction, ie the so-called forward voltage UF at the high currents occurring is about 1 volt. When operating in the reverse direction generally only a very small reverse current IR flows up to a breakdown voltage UZ.
  • Voltage and Zener diodes with reverse voltages which are approximately in the range of 20 to 40 V depending on the vehicle electrical system voltage of the vehicle.
  • the high-blocking diodes (HS diodes) must not be operated in breakdown.
  • Zener diodes can also be operated in breakdown mode and, for a short time, even loaded with very high currents. They are therefore usually used to limit the overshooting generator voltage during load changes, so used in the load-dump case.
  • Rectifier bridge for an alternator leads to deterioration of the efficiency of the generator, not negligible. Since an average of two diodes are always connected in series, the average forward losses for a 100 A generator are about 200 watts. The associated heating of the diodes and the rectifier must be reduced by complex cooling measures. In the DE
  • HED high-efficiency diodes
  • Diodes are referred to as high-efficiency diodes or high-efficiency Schottky diodes (HEDs) which, unlike conventional diodes or Schottky diodes, have no barrier lowering effect (BL effect) caused by the blocking voltage and therefore have very low reverse currents.
  • BL effect barrier lowering effect
  • High efficiency Schottky diodes consist of a combination of conventional Schottky diodes monolithically integrated on a semiconductor chip with other elements such as field plates, pn junctions or different barrier metals. These are often implemented in trench technology, a high-efficiency Schottky diode then contains at least some trench or trench structures.
  • the trenches are typically about 1-3 microns deep and about 0.5 to 1 microns wide. With such high-efficiency Schottky diodes significantly lower forward voltages UF of about 0.5 to 0.6 volts can be realized.
  • HED high-efficiency Schottky diodes
  • Hetero-junction can be used in a particularly advantageous manner for the rectification of the output voltage or the output current of generators, in particular three-phase generators for vehicles.
  • a heterojunction of two different Semiconductor materials may consist of a p-doped layer or a p-doped region
  • Silicon germanium (Si j _ x Ge x ) and an n-doped layer or an n-doped region of silicon (Si) are formed.
  • the index x designates the germanium content.
  • x 0.3 corresponds to a germanium content of 30% in the silicon-germanium layer.
  • Heterogeneous transitions are exploited in various components of semiconductor technology in order to achieve certain advantages.
  • AIQ 2 Gag ⁇ As / GaAs As an example of such semiconductors with heterojunctions, let AIQ 2 Gag ⁇ As / GaAs.
  • diodes can be achieved by means of suitable composition of the particular advantage that the forward voltage UF is smaller than in a conventional diode, which consists only of a semiconductor material which is doped differently.
  • Diodes with such structures in which the pn junction or the pn junctions consist of different materials are referred to as heterojunction diodes (HJD).
  • HED high-efficiency Schottky diodes
  • the hetero-junction diodes are very easy to produce, since they do not have to have fine structures.
  • the cost of cooling the heterojunction diodes can be reduced over the use of conventional pn diodes.
  • the low temperatures of the hetero-junction diodes increase the
  • Heterojunction diodes denote diodes which have a heterojunction instead of a customary pn junction made of differently doped silicon.
  • a heterojunction is formed from two different semiconductor materials. For example, a hetero-junction of a p-doped layer or a p-doped region of silicon germanium (Si j _ x Ge x) and an n-doped layer and an n-doped region of silicon (Si) are formed.
  • the heterojunction is designed in such a way that the forward voltage UF of the diode is smaller than the forward voltage of a comparable pn diode, in which the p and n regions consist of the same semiconductor material but are doped differently.
  • UF means: forward voltage
  • IF flow current
  • IR reverse current
  • UR blocking voltage
  • the typical forward voltage UF of a conventional silicon diode with a pn junction set only by different doping is about 1 volt, it can be seen from the above equation that when replacing a conventional diode with a heterojunction diode (HJD) a forward voltage UF between 0.5 and 0.7 volts, the power loss can be reduced by 30 to 50%, provided that the barrier losses IR * UR are kept small.
  • HJD heterojunction diode
  • FIG. 2 shows a schematic representation of the energy band of a silicon-germanium / silicon transition (SiGe / Si transition) with a germanium content of 30% at room temperature in the equilibrium state. Silicon germanium is p-doped and silicon is n-doped. The energy distribution in electron volts is plotted
  • Ec, Ev and EF denote the lower edge of the conduction band, upper edge of the valence band and Fermi energy.
  • the energy barrier for electrons is denoted by ⁇ bn.
  • the energy barrier ⁇ bn for electrons is about 0.79 eV, for holes is the
  • the energy barrier can be influenced by the germanium content.
  • a barrier as in the heterojunction illustrated in FIG. 2 is less dependent on the applied blocking voltage UR, only a small barrier lowering BL is present. Therefore, the reverse currents in hetero-transitions or in hetero-
  • HJD Junction diodes
  • HJD heterojunction diode
  • This heterojunction diode has a flux voltage of about 650 mV at a flux density of 500 AJc ⁇ c? on.
  • the so-called avalanche breakdown voltage UZ is about 22 V.
  • the hetero-junction diode (HJD) consists of a, about 200 micron thick substrate 1 of n-doped silicon. Above this there is an n-doped silicon epitaxial layer 2 with a thickness of approximately 1.1 ⁇ m.
  • the doping concentration is, for example 4.5 * I "cm ⁇ - ⁇ Over this layer is the silicon-germanium layer 3 mm with a germanium content of 10 to 40% of the silicon-germanium layer 3 is between 10 and 50 thick and. doped with boron at a concentration of more than 10 * "cm ⁇ ->. If higher dopings are desired, a stepped p-doping profile is advantageous. The pn junction is located within the silicon germanium region.
  • Both the silicon germanium layer 3 at the top and the substrate 1 at the bottom are each provided with a metallic contact 4 and 5, respectively.
  • a metallic contact 4 and 5 for example, a layer sequence of chromium, nickel and silver can be used.
  • the contacts 4 and 5 form the anode and cathode of
  • Heterojunction diode At the edge of the structure according to FIG. 1, structures which increase the blocking capability of the component on the chip edge (for example by means of a guard ring or field plates, etc.) are applied by conventional photolithographic processes and by diffusion. In the example of the heterojunction diode (HJD) according to FIG. 1, the edge structure is not explicitly illustrated.
  • heterojunction diode In the production of the structure of a heterojunction diode (HJD) shown in FIG. 1, after the individual process steps have been carried out, the semiconductor wafer is divided in the usual way into individual diode chips. The diode chips can then be soldered, for example, in a known standardized Einpressdiodengephase and enclosed with a plastic compound.
  • Such heterojunction diodes (HJD) can be mounted in the rectifier, in particular for a three-phase generator for a vehicle such as the usual pn diodes in the press-fit housing by pressing into the heat sink or bearing plates of the generator.
  • the forward voltage UF and the reverse current IR can be set in the desired manner.
  • the desired values for the forward voltage UF and reverse current IR are selected such that after installation in the rectifier, the properties desired for the rectifier are obtained.
  • FIG. 3 shows typical dependencies of forward voltage UF and reverse current density JR for a 22 volt heterojunction diode (HJD) as a function of germanium content in the silicon germanium layer and as a function of the silicon germanium layer thickness at room temperature. It can be seen that the forward voltage UF and the blocking current density JR and thus also the reverse current IR can be adjusted by selecting the germanium content.
  • HJD heterojunction diode
  • heterojunction diodes HJD
  • HJD heterojunction diodes
  • Arrangements or structures or rectifier arrangements are also possible which, for example, have additionally integrated a further pn junction which determines the value of the breakdown voltage.
  • the arrangement is such that the hetero-junction diodes used have additionally integrated further pn junctions, which then determine the value of the forward voltage.
  • circuits are possible in which only the plus diodes or alternatively only the negative diodes by
  • Hetero-junction diodes are replaced.
  • a series connection of conventional pn diodes with heterojunction diodes is used. Although this reduces the power increase of the generator, but on the other hand, the leakage currents of the generator are lower because the reverse currents of conventional pn diodes are generally lower than the blocking currents of heterojunction diodes.
  • the proportion of load-dump energy between the heterojunction diodes (HJD) and the pn diodes, which consist only of Si, can advantageously be distributed or influenced.
  • hetero-junction diodes for use in rectifiers of generators, the additional structures such as Schottky junctions, pn structures and Field plates are possible. These can be configured in a planar arrangement or else with trench structures or trench structures.
  • the combination of the structures described above with heterojunction diodes (HJD) are particularly suitable for use in rectifiers for generators in motor vehicles.
  • heterojunction diodes materials other than SI and Ge can also be used. In particular, these are different materials from the group of III / V compounds. Then, for example, a layer of silicon (Si) and a layer, for example, instead of silicon germanium (SiGe) on a silicon-carbon (SiC) compound.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Sont indiqués des dispositifs à semi-conducteur, ce qu'on appelle les diodes à hétérojonction (HJD), et des dispositifs redresseurs avec de tels dispositifs à semi-conducteur. Les diodes à hétérojonction (HJD) se composent de différents matériaux de semi-conducteur, en particulier de germanium-silicium et de silicium, qui sont respectivement différemment dopés. Par sélection de la part de germanium ainsi que de la densité de la couche SiGe, des propriétés telles que la tension de claquage et le courant inverse de la diode peuvent être réglées dans certaines zones. Les diodes à hétérojonction (HJD) sont utilisées dans des dispositifs redresseurs, par exemple pour des générateurs dans des véhicules automobiles, d'autres éléments semi-conducteurs par exemple des diodes à barrière de Schottky, des diodes Zener ou des magnétorésistances, pouvant être montés en supplément des diodes à hétérojonction (HJD). En raison de la faible tension de flux des diodes à hétérojonction (HJD), le rendement ainsi que la puissance utile lors du fonctionnement à vide du générateur sont améliorés par rapport aux ponts semi-conducteurs traditionnels.
PCT/EP2007/054939 2006-05-24 2007-05-22 Composant semi-conducteur et dispositif redresseur WO2007135146A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP07729378A EP2030242A1 (fr) 2006-05-24 2007-05-22 Composant semi-conducteur et dispositif redresseur

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006024850.3 2006-05-24
DE200610024850 DE102006024850A1 (de) 2006-05-24 2006-05-24 Halbleiterbauelement und Gleichrichteranordnung

Publications (1)

Publication Number Publication Date
WO2007135146A1 true WO2007135146A1 (fr) 2007-11-29

Family

ID=38352984

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2007/054939 WO2007135146A1 (fr) 2006-05-24 2007-05-22 Composant semi-conducteur et dispositif redresseur

Country Status (3)

Country Link
EP (1) EP2030242A1 (fr)
DE (1) DE102006024850A1 (fr)
WO (1) WO2007135146A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102569334A (zh) * 2010-12-22 2012-07-11 中国科学院微电子研究所 阻变随机存储装置及系统

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007045184A1 (de) 2007-09-21 2009-04-02 Robert Bosch Gmbh Halbleitervorrichtung und Verfahren zu deren Herstellung
DE102010031640A1 (de) 2010-07-22 2012-01-26 Robert Bosch Gmbh Energieversorgungseinheit für ein Bordnetz eines Kraftfahrzeugs
EP3442036B1 (fr) * 2017-08-09 2020-06-24 AE 111 Autarke Energie GmbH Composant semi-conducteur optoélectronique

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5168328A (en) 1990-07-03 1992-12-01 Litton Systems, Inc. Heterojunction impatt diode
US6277713B1 (en) * 2000-05-12 2001-08-21 Juses Chao Amorphous and polycrystalline growing method for gallium nitride based compound semiconductor
US20020142532A1 (en) 2001-04-03 2002-10-03 Fumihiko Hirose Method for manufacturing semiconductor device
EP1294025A2 (fr) * 2001-09-11 2003-03-19 Sarnoff Corporation Circuit redresseur au silicium commande pour la protection de circuits integres contre les decharges electrostatiques
US20030160264A1 (en) 2002-02-22 2003-08-28 Fuji Xerox Co., Ltd. Hetero-junction semiconductor device and manufacturing method thereof
EP1503425A2 (fr) 2003-07-30 2005-02-02 Nissan Motor Co., Ltd. Dispositif semi-conducteur à hétérojonction et procédé pour sa fabrication
EP1587147A2 (fr) * 2004-04-13 2005-10-19 Nissan Motor Co., Ltd. Dispositif semi-conducteur à hétérojonction

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5168328A (en) 1990-07-03 1992-12-01 Litton Systems, Inc. Heterojunction impatt diode
US6277713B1 (en) * 2000-05-12 2001-08-21 Juses Chao Amorphous and polycrystalline growing method for gallium nitride based compound semiconductor
US20020142532A1 (en) 2001-04-03 2002-10-03 Fumihiko Hirose Method for manufacturing semiconductor device
EP1294025A2 (fr) * 2001-09-11 2003-03-19 Sarnoff Corporation Circuit redresseur au silicium commande pour la protection de circuits integres contre les decharges electrostatiques
US20030160264A1 (en) 2002-02-22 2003-08-28 Fuji Xerox Co., Ltd. Hetero-junction semiconductor device and manufacturing method thereof
EP1503425A2 (fr) 2003-07-30 2005-02-02 Nissan Motor Co., Ltd. Dispositif semi-conducteur à hétérojonction et procédé pour sa fabrication
EP1587147A2 (fr) * 2004-04-13 2005-10-19 Nissan Motor Co., Ltd. Dispositif semi-conducteur à hétérojonction

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SHENOY P M ET AL: "High voltage <E1>P</E1><E6>+</E6> polysilicon/<E1>N</E1><E6>-</E6> 6H-SiC heterojunction diodes", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 33, no. 12, 5 June 1997 (1997-06-05), pages 1086 - 1087, XP006007538, ISSN: 0013-5194 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102569334A (zh) * 2010-12-22 2012-07-11 中国科学院微电子研究所 阻变随机存储装置及系统

Also Published As

Publication number Publication date
DE102006024850A1 (de) 2007-11-29
EP2030242A1 (fr) 2009-03-04

Similar Documents

Publication Publication Date Title
DE102012100349B4 (de) Halbleiterbauelement und IGBT mit integrierter Freilaufdiode
EP1817799B1 (fr) Dispositif a semi-conducteurs et ensemble redresseur
DE102008009111A1 (de) Schaltungsanordnung mit Freilaufdiode
EP2649649B1 (fr) Dispositif générateur pour alimenter un véhicule à moteur en tension
DE102012201911B4 (de) Super-Junction-Schottky-Oxid-PiN-Diode mit dünnen p-Schichten unter dem Schottky-Kontakt
DE112014001838T5 (de) Halbleitervorrichtung
WO1996003774A1 (fr) Composant a semi-conducteur a terminaison marginale a haut pouvoir de blocage
DE19811297A1 (de) MOS-Halbleitervorrichtung mit hoher Durchbruchspannung
DE3339805A1 (de) Feldeffekt-transistor und damit aufgebaute integrierte schaltung
DE102015102129A1 (de) Halbleitervorrichtung und RC-IGBT mit direkt an eine Rückseitenelektrode angrenzenden Zonen
DE102015100340A1 (de) Bipolare halbleitervorrichtung und herstellungsverfahren dafür
DE102014110006A1 (de) Ladungskompensations-Halbleitervorrichtungen
EP0760528B1 (fr) Dispositif semi-conducteur sur base de silicium avec bordure à blocage élevé
DE112017004237B4 (de) Halbleitereinheit
DE102011054825A1 (de) Ein Halbleiterbauelement und ein Verfahren zum Herstellen eines Halbleiterbauelements
DE102012023512A1 (de) Sperrschicht-Schottky-Diode
DE112018006456T5 (de) Siliciumcarbid-Halbleitereinheit und Leistungswandler
DE102014005879A1 (de) Vertikale Halbleitervorrichtung
DE102009044670B4 (de) Bipolares Halbleiterbauelement und Herstellungsverfahren
WO2007135146A1 (fr) Composant semi-conducteur et dispositif redresseur
DE102018115728B4 (de) Halbleitervorrichtung, die einen Siliziumcarbidkörper und Transistorzellen enthält
DE69835052T2 (de) Kontakt auf P-Typ Gebiet
DE102016104757B4 (de) Halbleitertransistor und Verfahren zum Bilden des Halbleitertransistors
WO2009040279A1 (fr) Dispositif semi-conducteur et procédé de fabrication
DE102014116625A1 (de) Vertikale Halbleitervorrichtung und Verfahren für deren Herstellung

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07729378

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2007729378

Country of ref document: EP