WO2007114190A1

WO2007114190A1 - Film deposition equipment and method for producing magnetic disc

Info

Publication number: WO2007114190A1
Application number: PCT/JP2007/056721
Authority: WO
Inventors: Junichi Yasumori; Yujiro Saito; Keiji Moroishi
Original assignee: Hoya Corporation; Hoya Magnetics Singapore Pte. Ltd.
Priority date: 2006-03-30
Filing date: 2007-03-28
Publication date: 2007-10-11
Also published as: JP2007270189A; JP4961157B2

Abstract

Film deposition equipment comprises a base for holding a nonconductive substrate, and a bias applying means for applying a bias voltage to a conductive film deposited on the substrate by bringing a bias applying terminal into contact with the conductive film. The bias applying terminal is formed of a member which varies the shape depending on the temperature such as a shape memory alloy, and the bias applying terminal is brought into contact with the substrate held on the base or separated therefrom through deformation caused by temperature variation.

Description

Specification

Film forming apparatus and magnetic disk manufacturing method

Technical field

The present invention relates to a method for manufacturing a magnetic disk mounted on a hard disk device or the like, and also relates to a film forming apparatus that can be used for manufacturing such a magnetic disk.

Background art

Conventionally, a magnetic disk mounted on a hard disk drive is manufactured by forming a laminated film on a disk substrate with a vacuum apparatus (a sputtering apparatus or the like). This laminated film is formed, for example, by placing a disk substrate held on a base in a process chamber (film formation chamber) where a plurality of targets are installed, and after evacuating, by sputtering or CVD. Then, the film is formed.

[0003] A laminated film formed on a disk substrate is formed by sequentially forming films such as a base layer and a recording layer. It is known that the temperature of the disk substrate during the deposition of each of these layers has a significant effect on the surface condition and film characteristics of the film. In order to heat the disk substrate in a vacuum, a heater is installed in the sputtering equipment. Has been.

Incidentally, in recent years, such magnetic disks have been required to improve recording density. In order to improve the recording density of a magnetic disk, it is necessary to maintain and improve the signal quality and to improve the resistance to the self-demagnetization effect as the pit size is reduced. In order to maintain and improve signal quality, an intermediate nonmagnetic layer is provided between the underlayer and the magnetic film in order to reduce noise. In order to improve the resistance against the self-demagnetization effect, in order to increase the coercive force of the thin film of the magnetic film, the exchange coupling magnetic film is introduced, Pt is introduced into the magnetic film, and the disk is formed during film formation. A bias potential is applied to the substrate.

[0005] That is, IEEE-Transactions on Magnetics. 26 卷, p. 1282, 1990. (Non-patent Document 1), JP-A-7-225935 (Patent Document 1) and JP-A-5-205240 As described in the publication (Patent Document 2), during the formation of the magnetic film, magnetic sputtering is performed by applying negative sputtering to apply a negative DC bias voltage (substrate bias) to the disk substrate. It is known that the recording density of the air disk can be increased. This can be achieved by increasing the adhesion of the magnetic film by applying a substrate bias, reducing the surface roughness, increasing the hardness by increasing the density of the magnetic film, as well as the orientation of the microcrystalline film and the length of the crystal axis. This is because it can be changed.

[0006] When a non-conductive glass substrate or the like is used as a disk substrate, a metal film is used as the first layer as described in JP-A-4-79025 (Patent Document 3). There is known a method in which a base layer made of the above is formed, a substrate bias is applied to the base layer, and a magnetic layer or the like is formed on the base layer. In such a case, Patent No. 3002632 (Patent Document 4) and Japanese Patent Application Laid-Open No. 7-243037 (Patent Document 5) describe methods for bringing the noise application terminal into contact with the underlying layer on the disk substrate. As shown, various methods have been proposed.

[0007] Further, in recent years, magnetic disks include not only 2.5 inch type mounted on so-called laptop computers and 3.5 inch type mounted on so-called desktop computers, but also mobile phones, Small-diameter magnetic disks, such as 1.0-inch type and 0.85-inch type, are manufactured for use in storage devices of small devices such as digital cameras, car navigation systems, and portable music players. Productivity cannot be improved unless film formation on such a small-diameter disk substrate is performed by holding a plurality of disk substrates on one base.

[0008] Therefore, in the manufacture of these small-diameter magnetic disks, in order to improve productivity, for example, as described in Japanese Patent Application Laid-Open No. 2001-011625 (Patent Document 6), one base having a large diameter is used. A method has been proposed in which a plurality of small-diameter disk substrates are held on top and a film is formed on a plurality of disk substrates at a time using a single-wafer film deposition apparatus.

Patent Document 1: Japanese Patent Application Laid-Open No. 7-225935

Patent Document 2: JP-A-5-205240

Patent Document 3: Japanese Patent Laid-Open No. 4 79025

Patent Document 4: Japanese Patent No. 3002632

Patent Document 5: Japanese Patent Laid-Open No. 7-243037

Patent Document 6: Japanese Patent Laid-Open No. 2001-011625 Non-Patent Document 1: IEEE-Transactions on Magnetics. 26 卷, 1282, 19 90.

Disclosure of the invention

Problems to be solved by the invention

[0010] By the way, in non-sputtering in which a DC bias is applied to the disk substrate, a claw-shaped member made of a conductive material (for example, metal) is provided on the base, and each disk substrate is held by the claw-shaped member. This claw-like member is also used as a bias application terminal.

[0011] When bias sputtering is performed using a non-conductive disk substrate, it is necessary to apply a DC bias to the underlying layer formed on the non-conductive disk substrate. This underlayer is formed in a state where the disk substrate is held by a claw-like member used also as a bias application terminal. In this case, the base layer is not formed on the portion of the disk substrate covered with the claw-like member. Therefore, the contact between the nail-like member and the underlayer is insufficient, and there is a concern that the substrate bias cannot be applied appropriately.

[0012] Therefore, after the base layer is formed, the position of the disk substrate is changed and reattached to the nail member so that the nail member and the base layer are in sufficient contact with each other. . In this way, the electric conduction necessary for applying the substrate bias is ensured, and therefore the substrate bias can be appropriately applied in the subsequent film forming process.

[0013] However, in order to reattach the disk substrate, the disk substrate is once taken out of the film forming apparatus and then put back into the film forming apparatus, resulting in a significant deterioration in productivity. In particular, when film formation is performed simultaneously on a plurality of disk substrates, it is difficult to improve productivity because it is necessary to apply DC noise to each disk substrate. It has become. In addition, taking out the disk base into the atmosphere may cause particles to adhere to the disk substrate, which may result in quality degradation.

[0014] Therefore, the present invention is proposed in view of the above situation, and in a single wafer type film forming apparatus for performing film formation by bias sputtering on a plurality of non-conductive substrates. The DC bias can be applied satisfactorily while maintaining productivity. The purpose is to provide a high-productivity manufacturing method for magnetic disks that supports high-density recording.

Means for solving the problem

In order to solve the above-described problems and achieve the above object, a film forming apparatus according to the present invention has one of the following configurations.

[0016] [Configuration 1]

A single-wafer type film forming apparatus that forms a film by bias sputtering on a non-conductive substrate, and has a base for holding at least one non-conductive substrate and a bias application terminal. Bias application means for applying a noise voltage to the conductive film by bringing the application terminal into contact with a conductive film formed on a non-conductive substrate. It is formed by a member whose shape changes, and is characterized by coming into contact with and separating from a non-conductive substrate held on a base by deformation due to temperature change.

[0017] [Configuration 2]

In the film forming apparatus having the configuration 1, the member whose shape changes depending on the temperature forming the noisy application terminal is a shape memory alloy.

[0018] [Configuration 3]

In the film forming apparatus having the configuration 1, the member whose shape changes depending on the temperature forming the noisy application terminal is a bimetal.

[0019] [Configuration 4]

In the film forming apparatus having any one of Configurations 1 to 3, the bias application terminal is deformed by the temperature rise accompanying the film formation and contacts the non-conductive substrate held on the base. It is characterized by being deformed by a temperature drop accompanying the completion of film formation and being separated from a non-conductive substrate held on a base.

[0020] [Configuration 5]

The film forming apparatus having any one of Configurations 1 to 3 includes temperature control means for controlling the temperature of the bias application terminal, and the temperature of the bias application terminal is increased by the temperature control means during film formation. Non-conductive held on the base The substrate is in contact with the substrate and is deformed when the temperature is lowered by the temperature control means after the film formation is completed, and is separated from the non-conductive substrate held on the base. .

[0021] [Configuration 6]

The film forming apparatus having any one of Configurations 1 to 3 includes current supply means for supplying current to the bias application terminal, and the bias application terminal is supplied with current by the current supply means during film formation. As the temperature rises, it deforms and comes into contact with the non-conductive substrate held on the base, and after the film formation is completed, the current supply by the current supply means is cut off and the temperature is lowered. It is characterized in that it is deformed and separated from the nonconductive substrate held on the base.

[0022] [Configuration 7]

A film forming apparatus having any one of Structures 1 to 6, wherein a disk substrate is used as a substrate, and an underlayer, a magnetic layer, and a protective layer are sequentially formed on the disk substrate. .

[0023] Further, the magnetic disk manufacturing method according to the present invention has only one of the following configurations.

[0024] [Configuration 8]

A method of manufacturing a magnetic disk in which an underlayer, a magnetic layer, and a protective layer are sequentially formed on a nonmagnetic and nonconductive disk substrate, the step of holding the disk substrate on a base, and a base in a vacuum chamber. Forming a conductive film on the disk substrate held on the table, and forming the bias application terminal on the disk substrate by deforming the bias application terminal of the bias application means in the vacuum chamber A magnetic layer and a protective layer on the conductive film while applying a negative voltage to the conductive film via a bias applying terminal by a bias applying means in a vacuum chamber. Forming a layer sequentially, and forming a bias applying member by a member whose shape changes according to temperature, and holding it on the base by deformation due to temperature change. And it is characterized in the use of those contact and separation in the non-conductive substrate.

[0025] [Configuration 9] In the method of manufacturing a magnetic disk having the configuration 8, a shape memory alloy is used as a member whose shape changes according to the temperature at which the bias application terminal is formed.

[0026] [Configuration 10]

In the method of manufacturing a magnetic disk having the configuration 8, a bimetal is used as a member whose shape changes depending on the temperature forming the bias application terminal.

[Configuration 11]

In the manufacturing method of the magnetic disk having any one of the deviations 8 to 10, the bias application terminal is deformed by the temperature rise accompanying the film formation and is held on the base. It is characterized in that it is brought into contact with a conductive substrate and is deformed by a temperature drop accompanying the completion of film formation so as to be separated from a nonconductive substrate held on a base.

[0028] [Configuration 12]

In the method of manufacturing a magnetic disk having any one of the deviations of Configurations 8 to 10, the bias application terminal is being formed using the temperature control means for controlling the temperature of the bias application terminal. The substrate is deformed by raising the temperature to contact with the non-conductive substrate held on the base, and is deformed by lowering the temperature after the film formation is completed, and the non-conductive held on the base. It is characterized in that it is separated from the conductive substrate.

[0029] [Configuration 13]

In the method of manufacturing a magnetic disk having any one of the deviations of Configurations 8 to 10, the bias application terminal is being formed using the current supply means for supplying current to the bias application terminal. It is deformed by supplying a current to the substrate and raising the temperature to bring it into contact with a non-conductive substrate held on the base, and after the film formation is completed, the current supply is cut off and the temperature is lowered. It is characterized in that it is deformed and separated from the non-conductive substrate held on the base.

The invention's effect

[0030] In the film forming apparatus according to the present invention having the configuration 1, the bias application terminal has the temperature It is formed by a member whose shape changes according to the temperature, and due to deformation due to temperature change, it contacts and separates from the non-conductive substrate held on the base, so that the base remains installed in the vacuum chamber or the like In this state, the contact and separation of the noise application terminal and the substrate can be performed.

That is, in this film forming apparatus, the conductive film can be formed in a state where the bias application terminal and the substrate are not in contact with each other, and the bias application terminal should be in contact with the substrate. A conductive film can be satisfactorily formed even at the locations. Therefore, the conductive film and the bias application terminal can be appropriately electrically connected.

In addition, this film forming apparatus uses a conductive substrate that does not take the base into the atmosphere by bringing the bias application terminal into contact with the substrate by deformation of the bias application terminal. Substrate bias can be applied by substantially the same process as in the case of the above. Therefore, even when a non-conductive substrate is used, high productivity can be realized.

[0033] In the film forming apparatus according to the present invention having the configuration 2, the bias application terminal also has a shape memory alloy force, and can be deformed into a desired shape at a predetermined temperature.

[0034] In the film forming apparatus according to the present invention having the configuration 3, the bias application terminal is made of bimeter, so that a desired deformation amount can be obtained by a predetermined temperature change.

[0035] In the film forming apparatus according to the present invention having the configuration 4, the bias application terminal is deformed by a temperature change accompanying the film formation and the film formation, and is a nonconductive material held on the base. Since the substrate is in contact with or separated from the substrate, the application of the bias to the substrate is started and ended without performing a special operation.

In the film forming apparatus according to the present invention having the configuration 5, the temperature control means controls the temperature of the bias application terminal, so that the deformation state of the bias application terminal can be controlled.

[0037] In the film forming apparatus according to the present invention having the configuration 6, the temperature of the bias application terminal is controlled by the current supply means, so that the deformation state of the bias application terminal can be controlled.

[0038] In the film forming apparatus according to the present invention having the configuration 7, a disk substrate is used as a substrate, and an underlayer, a magnetic layer, and a protective layer are sequentially formed on the disk substrate. Can be used for manufacturing

[0039] In the method of manufacturing the magnetic disk according to the present invention having the configuration 8, the nose application terminal is formed by a member whose shape changes according to the temperature, and is formed on the base by the change due to the temperature change. Since the substrate that is in contact with and away from the non-conductive substrate held in the chamber is used, each bias application terminal can be brought into contact with or separated from each disk substrate while the base is still installed in the vacuum chamber. it can.

That is, according to this magnetic disk manufacturing method, the conductive film can be formed in a state where the bias application terminal and the disk substrate are not in contact with each other. The conductive film can be satisfactorily formed also at the location where the contact terminal for contact is to come into contact. Therefore, the conductive film and the bias application terminal can be appropriately electrically connected.

[0041] In addition, according to this method of manufacturing a magnetic disk, the disk base is brought into the atmosphere by bringing the noise application terminal and the disk substrate into contact with each other by deformation of the noise application terminal. Substrate bias can be applied by almost the same process as when using a conductive disk substrate without taking it out. Therefore, even when a non-conductive disk substrate is used, high mass productivity can be realized.

[0042] In the method of manufacturing the magnetic disk according to the present invention having the configuration 9, since the bias application terminal having shape memory alloy force is used, the bias application terminal has a desired shape at a predetermined temperature. Can be transformed into

[0043] In the manufacturing method of the magnetic disk according to the present invention having the configuration 10, since the bias application terminal uses a metal-metal force, the bias application terminal is deformed in a desired manner by a predetermined temperature change. It can be an amount.

[0044] In the method of manufacturing a magnetic disk according to the invention having the structure 11! On the other hand, the bias application terminal is deformed by the temperature change accompanying the completion of film formation and film formation, and is brought into contact with and separated from the non-conductive substrate held on the base. The application of bias to the substrate can be started and ended.

[0045] In the method of manufacturing the magnetic disk according to the present invention having the configuration 12, the temperature of the bias application terminal is controlled by the temperature control means. The state can be controlled.

[0046] In the method of manufacturing a magnetic disk according to the present invention having the structure 13, the temperature of the bias application terminal is controlled by the current supply means, so that the deformation state of the bias application terminal is controlled. Can do.

That is, according to the present invention, in a single-wafer type film forming apparatus that performs film formation by bias sputtering on a plurality of non-conductive substrates, a DC bias is satisfactorily applied while maintaining productivity. In addition, by using this film forming apparatus, it is possible to provide a manufacturing method with high productivity of a magnetic disk compatible with high-density recording. Brief Description of Drawings

[0048] FIG. 1 is a plan view (a) and a cross-sectional view (b) showing a configuration of a magnetic disk manufactured by a magnetic disk manufacturing method according to the present invention.

FIG. 2 is a plan view showing a configuration of a rotary transfer type single wafer reaction chamber in a film forming apparatus according to the present invention (a) and a plan view showing a configuration of a straight transfer type single wafer reaction chamber (b). It is.

FIG. 3 is a plan view showing a configuration of a base in the film forming apparatus according to the present invention.

FIG. 4 is a graph showing the relationship between the film forming process and the bias application terminal deformation in the film forming apparatus according to the present invention.

FIG. 5 is a plan view showing another example of the configuration of the bias application terminal in the film forming apparatus according to the present invention.

FIG. 6 is a plan view showing another example of the configuration of the base in the film forming apparatus according to the present invention.

FIG. 7 is a graph showing the relationship between the coercive force (a) and the relationship with the SN ratio (b) as the effect of the DC bias in the magnetic disk manufacturing method according to the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

The best mode for carrying out the present invention will be described below with reference to the drawings.

[Outline of Magnetic Disk and its Manufacturing Method]

FIG. 1 is a plan view (a) and a cross-sectional view (b) showing the configuration of a magnetic disk manufactured by the method of manufacturing a magnetic disk according to the present invention.

[0051] A magnetic disk manufactured by the method of manufacturing a magnetic disk according to the present invention is a hard disk. A magnetic disk mounted on a disk drive, as shown in (a) of FIG. 1, using a circular disk substrate 1 having a central hole la made of a nonmagnetic and nonconductive material, As shown in FIG. 1 (b), the base layer 2, the magnetic layer 3, and the protective layer 4 are stacked on the surface lb of the disk substrate 1 in this order to form a film.

[0052] The disk substrate 1 is made of chemically tempered glass such as aluminosilicate glass, aluminoporosilicate glass, or soda lime glass. In the case of the 1.0 inch type, the outer diameter is 27 mm and the inner diameter (center). The diameter of the hole la) is 7mm, and the thickness force is 0.381mm. Further, the surface lb of the disk substrate 1 is mirror-polished so that the surface roughness is 0.4 nm or less in Ra and 5 nm or less in Rmax.

To manufacture the magnetic disk 1, first, the first underlayer 2 a is formed on the surface lb of the disk substrate 1 by physical vapor deposition such as DC magnetron sputtering. The first underlayer 2a is an AlRu alloy thin film having a thickness of 5 nm. Next, the second underlayer 2b is formed on the first underlayer 2a by a DC magnetron sputtering method or the like. The second underlayer 2b is, for example, a CrMoTi alloy thin film having a thickness of 50 nm. The underlayer 2 composed of the first underlayer 2a and the second underlayer 2b is formed in order to improve the crystal structure of the magnetic layer 3.

Next, the magnetic layer 3 is formed on the underlayer 2 (second underlayer 2b) by physical vapor deposition such as DC magnetron sputtering. For example, the magnetic layer 3 has a thickness force of 15 nm.

CoCrB alloy thin film.

Next, the protective layer 4 is formed on the magnetic layer 3 by plasma CVD. Protective layer 4

For example, it is made of amorphous diamond-like carbon having a thickness of 3 nm, and has a function of improving the wear resistance and protecting the magnetic layer 3.

Next, the lubricating layer 5 is formed on the surface of the protective layer 4 by a dipping method. The lubricating layer 5 is composed of a force such as a perfluoropolyether layer having a thickness of 1.2 nm, for example, and has a function of mitigating impact when contacting the magnetic head.

[Configuration of film forming apparatus]

FIG. 2 is a plan view (a) showing a configuration of a rotary transfer type single wafer reaction chamber in a film forming apparatus according to the present invention, and a plan view (b) showing a configuration of a straight transfer type single wafer reaction chamber. It is.

In the magnetic disk manufacturing apparatus according to the present invention, the film forming apparatus according to the present invention is used to form the base layer 2, the magnetic layer 3 and the protective layer 4 on the surface lb of the disk substrate 1. In this film forming apparatus, as shown in FIG. 2A, a plurality of disc substrates 1 (four in this embodiment) are held by a base (substrate holder) 6. In this state, the film is transferred into the reaction chamber of the film forming apparatus.

[0059] Each disk substrate 1 is supported at the outer peripheral end on the inner peripheral side of the through hole formed in the base 6, with one surface facing upward and the other surface facing downward. Is held.

In the reactive chamber of this film forming apparatus, first to third targets 7, 8 for forming the underlayer 2 and the magnetic layer 3 along the rotational conveyance direction of the base 6. 9 is arranged. The first target 7 is an AlRu target for forming the first underlayer 2a, and the second target 8 is a CoCrTi target for forming the second underlayer 2b, and the third target 9 is a CoCrB target for forming the magnetic layer 3. Each target 7, 8 and 9 is arranged on the upper surface side and the lower surface side so as to sandwich the disk substrate 1 held on the transported base 6 from both sides in the reaction chamber! RU

[0061] The space in which the targets 7, 8, 9 are arranged is partitioned while allowing the movement of the base 6 as required.

[0062] In this film forming apparatus, the disk substrate 1 held by the base 6 is first opposed to the first target 7 and is subjected to the first growth by a vapor phase growth method such as a DC magnetron sputtering method. The underlayer 2a is formed. Next, the disk substrate 1 held by the base 6 is heated to a predetermined temperature in the heating chamber 10. Then, the disk substrate 1 is transported through the reactive chamber while being held by the base 6, and is sequentially opposed to the second and third targets 8 and 9, and a vapor phase growth method such as a DC magnetron sputtering method. Thus, the second underlayer 2b and the magnetic layer 3 are formed. The disk substrate 1 that has been deposited is discharged from the reactive channel.

[0063] Note that, as shown in FIG. 2 (b), this film forming apparatus may have a linear conveyance type single wafer reaction chamber. In this film forming apparatus, the base 6 holding the disk substrate 1 is conveyed linearly in the reactive chamber. [0064] In this film forming apparatus, the disk substrate 1 held by the base 6 is first opposed to the first target 7 and is subjected to the first growth by a vapor phase growth method such as a DC magnetron sputtering method. The underlayer 2a is formed. Next, the disk substrate 1 held by the base 6 is heated to a predetermined temperature in the heating chamber 10. Then, the disk substrate 1 is transported through the reactive chamber while being held by the base 6, and is sequentially opposed to the second and third targets 8 and 9, and a vapor phase growth method such as a DC magnetron sputtering method. Thus, the second underlayer 2b and the magnetic layer 3 are formed. The disk substrate 1 that has been deposited is discharged from the reactive channel.

The disk substrate 1 on which the film up to the magnetic layer 3 has been formed in this way is sent to a plasma CVD chamber (not shown), and the protective layer 4 is formed by plasma CVD.

[0066] [Configuration of base]

FIG. 3 is a plan view showing the configuration of the base in the film forming apparatus according to the present invention.

As shown in FIG. 3, the base 6 in the film forming apparatus according to the present invention has a disc-like base main body (base) 6a, and a plurality of sheets (this embodiment) In this embodiment, four disk substrates for 1.0-inch type magnetic disks are configured to be on the same plane and can be held at equiangular intervals in the circumferential direction.

[0068] The base body 6a is made of, for example, titanium and has an outer shape of, for example, 95 mm. Each of the targets 7, 8, and 9 in the reaction chamber has a disk shape with an outer diameter larger than that of the base body 6a, for example, an outer diameter of 120 mm. Accordingly, the disk substrate 1 is held on the base 6, so that the targets 7, 8, 9 are arranged around the positions facing the centers of the targets 7, 8, 9.

[0069] In the base body 6a, four through holes 11 larger than the disk substrate 1 are formed at equal intervals in the circumferential direction. A plurality of external chucks 12 that sandwich and hold the outer peripheral end portion of the disk substrate 1 are provided in the inner peripheral portions of these through holes 11.

[0070] Then, as shown in FIG. 3A, the base body 6a has a number of bias application terminals 13 corresponding to the number of disk substrates 1 held by the base body 6a. Bias applying means is provided. This bias applying means makes each lead applying terminal 13 come into contact with a conductive film formed on the non-conductive disk substrate 1 to thereby introduce this bias. A bias voltage is applied to the conductive film.

[0071] Each bias application terminal 13 is formed of a member whose shape changes with temperature, and is formed on the non-conductive disk substrate 1 held on the base body 6a by deformation due to temperature change. Connect and separate. Examples of the member whose shape changes according to the temperature forming the bias application terminal 13 include a material having a large thermal expansion coefficient. In addition, examples of the member whose shape changes depending on the temperature include a so-called shape memory alloy and bimetal.

[0072] In general, a shape memory alloy can memorize the shape at this time by performing a high heat treatment as a desired shape, and even when deformed at room temperature, when it is heated to a so-called transformation temperature (Af), It has the property of returning to the desired shape. As such a shape memory alloy, for example, a NiTiCu wire or the like can be used. Bimetal is a laminate of two metal alloys with different coefficients of thermal expansion, and due to temperature changes, deformation (warping) occurs due to the stress caused by the difference in thermal expansion of each metal alloy! / RU

Each noisy application terminal 13 has its distal end facing each disk substrate 1 and its proximal end attached to a bias application member 14. The bias applying member 14 is made of a conductive material such as metal and is formed in an annular shape so as to surround the base body 6a. Each bias application terminal 13 is deformed by a change in temperature while the base end side is supported by the bias application member 14, so that the front end side is a non-conductive disk held on the base body 6a. Move to and away from substrate 1.

Each bias applying terminal 13 is supported by a bias applying member 14 via an elastic flange 15, and when it comes into contact with each disk substrate 1, the elastic force of the flange 15 As a result, the tip side of each disk substrate 1 is pressed!

A DC bias voltage is applied to the bias applying member 14 through a DC voltage supply terminal 16 installed outside the base 6.

In the base 6, each bias application terminal 13 is brought into contact with a plurality of disk substrates 1 held by the base body 6 a when the second underlayer 2 b and the magnetic layer 3 are formed. As a result, a DC bias is simultaneously applied to each disk substrate 1.

It should be noted that the DC bias voltage may be applied to the conductive film formed on the disk substrate 1 via the bias application terminals 13 as well as the force applied to the noise application member 14. During ~ (B), the external DC voltage supply terminal 16 is applied to the conductive film formed on the disk substrate 1 through the conductor 17 and the bias applying terminals 13. Also good.

FIG. 4 is a graph showing the relationship between the film forming process and the deformation of the bias application terminal in the film forming apparatus according to the present invention.

In this film forming apparatus, as shown in FIG. 4, each bias applying terminal 13 is heated by a temperature control means (not shown) when forming the second underlayer 2b and the magnetic layer 3. Thus, the tip end side is brought into contact with the non-conductive disk substrate 1 held on the base body 6a. At this time, a bias voltage is applied to the conductive film formed on the non-conductive disk substrate 1 via the DC voltage supply terminal 16 and the bias applying member 14.

[0080] Then, each bias application terminal 13 is deformed when the temperature is lowered by the temperature control means after the film formation is completed, and the non-conductive disk substrate 1 held on the base body 6a. More apart. As described above, the bias application terminals 13 are separated from the disk substrate 1 after the film formation is completed, so that the disk substrates 1 can be easily detached from the base 6.

[0082] In order to make it easier to remove each disk substrate 1 from the base 6, each bias application terminal ₁₃ is separated from each disk substrate i after the DC bias is applied. It is preferable to do. That is, each bias application terminal 13 comes into contact with the disk substrate 1 as shown by an arrow a in the figure when heated to the transformation temperature or higher as shown in (a) in FIG. The first plate panel 13a having the shape memory alloy force set in advance as described above and the first plate panel 13a held at a position separated from the disk substrate 1 at a temperature lower than the transformation temperature (for example, room temperature). The two panel panels 13b can be combined. The bias applying terminal 13 has the base end sides of the first and second plate panels 13a and 13b fixed to the base body 6a, and the front end faces the disk substrate 1 held by the base body 6a. ing. [0083] The noise application terminal 13 configured as described above is, as shown by an arrow b in the figure, at the room temperature, as shown by (b) in FIG. 5, due to the force of the second plate panel 13b. When the temperature is maintained at a position separated from the disk substrate 1 and becomes the transformation temperature or higher, as shown in FIG. 5 (a), the disk substrate 1 is brought into contact with the first plate panel 13a. Therefore, the bias applying terminal 13 can facilitate the removal of the disk substrate 1 that does not get in the way when the disk substrate 1 is removed from the base 6.

[0084] Further, when each bias application terminal 13 is formed of a shape memory alloy, the transformation is performed by appropriately adjusting the alloy components, for example, the Ni content or changing the temperature at which the high heat treatment is performed. The temperature (Af) can be changed. As a result, each noise application terminal 13 is deformed by the temperature rise in the reactive chamber accompanying the film formation without being controlled by the temperature control means, so that the nonconductive state held on the base body 6a. When the substrate is brought into contact with the magnetic disk substrate 1 and taken out of the vacuum sputtering apparatus upon completion of the film formation, the temperature is lowered to the room temperature by being lowered to room temperature. Can be separated from the non-conductive disk substrate 1 held on the substrate.

[0085] Furthermore, each bias application terminal 13 was deformed by being supplied with a current by means of a current supply means (not shown) and the temperature was raised during film formation, and held on the base body 6a. It may be possible to bring the tip side into contact with the non-conductive disk substrate 1. In this case, each bias application terminal 13 is deformed when the current supply by the current supply means is interrupted and the temperature is lowered after the film formation is completed, so that the non-conductive held on the base body 6a. Away from the disc substrate 1

Further, as shown in (a) of FIG. 6, the bias applying terminal 13 may be processed into a coil panel shape in order to increase the displacement (operation amount). The coil panel-like bias application terminal 13 is sufficiently long to contact the disk substrate 1. The bias application terminal 13 expands and contracts as shown by an arrow c in the figure due to a temperature change, and comes in contact with and separates from the disk substrate 1 held on the base body 6a.

[0088] Also in this case, the DC bias voltage is equal to the bias applying member 14 force and each bias applying end. It may be applied to the conductive film formed on the disk substrate 1 via the element 13, and as shown in (b) of FIG. It may be applied to the conductive film formed on the disk substrate 1 via each bias applying terminal 13 via the.

[Effect in the present embodiment]

In this embodiment, it is possible to simultaneously apply a DC bias to a plurality of disk substrates 1 held by the base 6 during the formation of the magnetic layer 3, which corresponds to a high recording density. Magnetic disks can be manufactured with good productivity.

That is, after forming a conductive film on the disk substrate 1, it is not necessary to remove it from the chamber of the vacuum sputtering apparatus in order to apply a DC bias, simplifying the manufacturing process and improving productivity. In addition, because four films can be deposited at once, productivity is significantly more than four times that of conventional manufacturing methods that deposit one film at a time, take it into the atmosphere, and apply a bias. Can be improved.

Note that the DC bias is applied not only when the magnetic layer 3 is deposited, but also when the second underlayer 2b and the magnetic layer 3 are deposited. You can do it both ways.

Further, the DC bias may be applied at the time of forming the soft magnetic film in the perpendicular magnetic recording disk. In this case, since the soft magnetic layer requires a film thickness of about 50 nm, the soft magnetic layer can be formed without applying a DC bias first, and the thickness of the soft magnetic layer can be applied with a DC bias. When it reaches the point, application of DC bias may be started.

[Example of Magnetic Disk Manufacturing Method]

Using the base 6 configured as described above, a base layer 2 (first base layer (GIF layer) 2a and second base layer (UL) is formed on the surface of a non-conductive disk substrate (glass substrate) 1. Layer) 2b) and magnetic layer 3 (in the case of the so-called AFC structure, a plurality of magnetic layers divided by a spacer) were first subjected to precision polishing and chemical strengthening treatment. A disk substrate 1 for inch type magnetic disk is held by a base 6. Note that the magnetic disk has the same structure on both sides of the disk substrate. Here, only one side will be described. Then, as shown in FIG. 2, the base 6 is mounted on the automatic transfer device, and the base 6 is introduced into the reactive chamber. The base 6 is transported at a predetermined transport speed, and film formation is performed in a state where the base 6 is installed facing each of the targets 7, 8, 9 in a substantially concentric state. After the first underlayer (GIF layer) 2a is formed, it is introduced into the heating chamber 10. In the heating chamber 10, the disk substrate 1 is heated by a heater, for example, at 300 ° C. for 1 minute. By this heating, each bias applying terminal 13 returns to a predetermined original shape, and comes into contact with the outer peripheral end portion where the first underlayer 2a of the plurality of disk substrates 1 held by the base body 6a is formed. Touch.

Next, the second underlayer 2b and the magnetic layer 3 are formed. At this time, since each bias application terminal 13 is in contact with the outer peripheral edge portion where the first underlayer 2a of the plurality of disk substrates 1 held by the base body 6a is formed, each disk substrate 1 A DC bias is applied to. At least the magnetic layer 3 is formed in this manner with a DC bias applied to each disk substrate 1.

[0096] In this way, on both sides of the disk substrate 1, an AlRu layer (first underlayer 2a) having a thickness of 5 nm and a CrMoTi (second underlayer 2b) having a thickness of 50 nm are also provided. Then, a CoCr B magnetic layer 3 having a thickness of 15 nm is formed. Here, the sputtering conditions in the reactive chamber are, for example, a sputtering pressure of 5 mtorr and a sputtering atmosphere of an inert gas of argon.

When the film formation is completed in this way, the base 6 holding each disk substrate 1 is discharged from the reactive chamber. For the disk substrate 1 discharged from the reactive chamber, a protective layer 4 is formed on the magnetic layer 3 by a plasma CVD method or the like. Further, a lubricating layer 5 is formed on the upper layer of the protective layer 4 by applying a perfluoroether lubricant by a dipping method. This lubrication layer 5 is obtained by applying a perfluoroether-based lubricant and then heat-treating the disk substrate 1 at 100 ° C. for about 1 hour using an oven, so that the outermost layer of the disk substrate 1 is perfluoroether. It is formed by fixing a system lubricant. As the perfluoropolyether lubricant, for example, “Fomblin-Z-TetraolJ (trade name)” manufactured by rsolva y Solexis can be used.

Here, the film thickness of the lubricating layer 5 was measured with a Fourier transform infrared spectrophotometer (FTIR) and found to be 1.2 nm. [0099] [Comparative Example]

As a comparative example (1), the second underlayer 2b and the magnetic layer 3 were formed without applying a DC bias, and a magnetic disk was prepared in the same manner as in the previous example.

[0100] As a comparative example (2), after the first underlayer (GIF layer) 2a is formed, each disk substrate 1 is taken out into the atmosphere, and each bias application terminal 13 is brought into contact with these disk substrates 1. After that, the second underlayer 2b and the magnetic layer 3 were formed by applying a DC bias, and a magnetic disk was prepared in the same manner as in the previous embodiment. .

[0101] [Effect of DC bias]

FIG. 7 is a graph showing the relationship (a) with the coercive force and the relationship (b) with the S / N ratio as the effect of the DC bias in the magnetic disk manufacturing method according to the present invention.

[0102] Regarding the magnetic disk manufactured as described above, as shown in (a) of Fig. 7, the dependency of the holding force He on the DC bias was confirmed. It was confirmed that the force He was the best. In addition, as shown in (b) of Fig. 7, the dependence of the SN ratio on the DC bias was confirmed, and it was confirmed that the higher the DC bias, the better the SN ratio.

[0103] Note that the DC bias is a force that takes a negative value (minus). In Fig. 6, it is shown as a positive value rather than a negative value. For example, 400V means -400V DC bias.

[0104] Further, as shown in [Table 1] below, the magnetic disk of the example of the present invention has an SNR exhibiting electromagnetic conversion characteristics as compared with the magnetic disk of Comparative Example (1) (no DC bias). The improvement in (signal to noise ratio) was remarkable.

[0105] As shown in [Table 1], the magnetic disk of Comparative Example (2) is equivalent to the magnetic disk of the Example in terms of SNR. However, as described above, the first underlayer 2a is not provided. Since the film is once taken out into the atmosphere after film formation, particle contamination is observed. Also, the first underlayer 2a is formed and then taken out and the bias application terminals 13 are brought into contact with each disk substrate 1. As a result, it was confirmed that the mass productivity was significantly reduced.

[0106] [Table 1] SNR (signal to noise ratio)

Ma 讀

Comparative example (1) (No bias) 20.5

關 (2) (starts in the atmosphere) 20. 9 Industrial Applicability

The present invention can be applied to a single-wafer type film forming apparatus that forms a film by non-sputtering on a plurality of non-conductive substrates. A good DC bias can be applied while maintaining productivity.

Claims

The scope of the claims

[1] A single-wafer type film forming apparatus for forming a film by bias sputtering on a non-conductive substrate.

A base for holding at least one non-conductive substrate;

Bias applying means for applying a bias voltage to the conductive film by bringing the bias applying terminal into contact with a conductive film formed on the non-conductive substrate. Prepared,

The bias application terminal is formed of a member whose shape changes according to temperature, and contacts and separates from a non-conductive substrate held on the base by deformation due to temperature change. Deposition device.

[2] The film forming apparatus according to [1], wherein the member whose shape changes according to the temperature forming the bias applying terminal is a shape memory alloy.

[3] The film forming apparatus according to [1], wherein the member whose shape changes depending on the temperature forming the bias application terminal is a bimetal.

[4] The bias application terminal is deformed by the temperature rise accompanying the film formation, contacts the non-conductive substrate held on the base, and is caused by the temperature drop accompanying the end of the film formation. 4. The film forming apparatus according to claim 1, wherein the film forming apparatus is deformed to be separated from a non-conductive substrate held on the base.

[5] A temperature control means for controlling the temperature of the bias application terminal is provided,

The bias application terminal is deformed when the temperature is raised by the temperature control means during film formation, and contacts the non-conductive substrate held on the base, and after the film formation is completed. The deformation according to any one of claims 1 to 3, wherein the temperature control means deforms when the temperature is lowered and is separated from a non-conductive substrate held on the base. 2. The film forming apparatus according to 1.

[6] comprising a current supply means for supplying a current to the bias application terminal;

The bias application terminal is deformed when a current is supplied by the current supply means during the film formation and the temperature rises, and contacts the non-conductive substrate held on the base. After the end of the film, the current supply by the current supply means is interrupted and the temperature is 4. The film forming apparatus according to claim 1, wherein the film forming apparatus is deformed by being lowered and separated from a non-conductive substrate held on the base.

[7] The composition according to any one of [1] to [6], wherein a disk substrate is used as the substrate, and an underlayer, a magnetic layer, and a protective layer are sequentially formed on the disk substrate. Membrane device.

[8] A method of manufacturing a magnetic disk in which an underlayer, a magnetic layer, and a protective layer are sequentially formed on a nonmagnetic and nonconductive disk substrate,

Holding the disk substrate on a base;

Forming a conductive film on a disk substrate held on the base in a vacuum chamber;

In the vacuum chamber, by deforming the bias application terminal of the bias application means, the bias application terminal is brought into contact with the conductive film formed on the disk substrate; and

In the vacuum chamber, the bias applying means sequentially forms a magnetic layer and a protective layer on the conductive film while applying a negative voltage to the conductive film via the bias application terminal. A process,

A magnetic disk, wherein the bias applying member is formed of a member whose shape changes according to temperature, and contacts and separates from a non-conductive substrate held on the base by deformation due to temperature change. Manufacturing method.

9. The method of manufacturing a magnetic disk according to claim 8, wherein a shape-memory alloy is used as the member whose shape changes according to the temperature forming the bias application terminal.

10. The method of manufacturing a magnetic disk according to claim 8, wherein a bimetal is used as the member whose shape changes according to the temperature forming the bias application terminal.

[11] The bias application terminal is deformed by a temperature rise accompanying the film formation and brought into contact with a non-conductive substrate held on the base, and is deformed by a temperature drop accompanying the completion of the film formation. 11. The method of manufacturing a magnetic disk according to claim 8, wherein the magnetic disk is separated from a non-conductive substrate held on the base.

[12] Using the temperature control means for controlling the temperature of the bias application terminal, the bias The application terminal is deformed by increasing the temperature during the film formation, contacting the non-conductive substrate held on the base, and deforming by lowering the temperature after the film formation is completed. 11. The method for manufacturing a magnetic disk according to claim 8, wherein the magnetic disk is separated from a non-conductive substrate held on the base. Using the current supply means for supplying current to the bias application terminal, the bias application terminal is deformed by supplying a current during film formation to increase the temperature and held on the base. The non-conductive substrate is brought into contact with the non-conductive substrate, and after the film formation is completed, the current supply is cut off and the temperature is lowered to be deformed to be separated from the non-conductive substrate held on the base. The method for manufacturing a magnetic disk according to claim 8.