JPH07243037A - Thin film forming method and device therefor - Google Patents

Abstract

PURPOSE:To provide a thin film forming method and device thereof with which desired characteristics are obtainable by successively forming thin films consisting of plural layers on substrates made of an insulating material while decreasing processes. CONSTITUTION:Plural vacuum treatment chambers 1a, 1b, 1c... are successively installed between a load locking chamber 15 and an unload locking chamber 16. The substrates 2 are made transferable via substrate holders 3a, 3b, 3c.... The vacuum treatment chamber 1b is provided with a changing mechanism capable of rotating the substrates 2 relative to the substrate holders and the vacuum treatment chamber 1e is provided with a bias sputtering mechanism. The substrates 2 are rotated in the vacuum treatment chamber 1b and electrical conduction is assured between the substrate holder 3c and the films formed on the substrates 2. Bias impression is made sure in the vacuum treatment chamber 1e.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming method and apparatus, and particularly suitable for manufacturing a magnetic recording medium in which an underlayer film, a magnetic layer film and a protective layer film are sequentially provided on a substrate made of an insulating material. Thin film forming method and apparatus.

[0002]

2. Description of the Related Art There are various methods for forming a plurality of thin films on a substrate.

Conventionally, for example, in the manufacture of a magnetic recording medium, an underlayer film made of a NiP plating layer is provided on an aluminum alloy substrate, and a Cr underlayer and a C underlayer film are provided on the underlayer film.
A magnetic layer film made of an o alloy layer is provided by a sputtering method, respectively, and a protective layer film made of a carbon sputtered film or the like is further provided on the magnetic layer film (for example, Japanese Patent Laid-Open Publication No. Sho 6-62).
3-26827). In the sputtering of the magnetic layer film, a bias is applied to the substrate side to improve coercive force, corrosion resistance and the like.

FIGS. 5 and 6 schematically show a vacuum processing chamber in which the magnetic layer film is sputtered in the apparatus used for manufacturing as described above. In each drawing, 1 is a vacuum processing chamber and 2 is a vacuum processing chamber. Is a substrate, 3 is a substrate holder (substrate supporting member), 4 is a substrate holder transport mechanism, 5 is a target, 6 is a target holder, 7 is a cathode, and 8 is a bias applying power source. The substrate holder 3 and the transfer mechanism 4 are electrically insulated by an insulating material 9. The substrate holder 3 is of a mounting type in the case of FIG. 5, and is a locking type by the support spring 10 in the case of FIG.

A plurality of the vacuum processing chambers 1 having such a structure are continuously provided between the load lock chamber and the unload lock chamber, and the substrates 2 supported by the substrate holder 3 are adjacent to each other via the transfer mechanism 4. By sequentially transporting the layers to the processing chamber 1, the above layers are formed.

A magnetic recording medium using a substrate made of glass or other insulating material instead of the aluminum alloy substrate is also known (for example, Japanese Patent Laid-Open No. 3-125322). In the production of a magnetic recording medium using a substrate made of an insulating material, the formation of the underlayer film is also performed by a sputtering method. First, the substrate is introduced into a vacuum processing chamber, and the substrate is kept under about 5 × 10 ⁻⁶ Torr. After exhausting to a pressure of about 2 × 10
The pressure is adjusted to ^-5 Torr, and a metal film (for example, NiP or C) is formed as an underlayer by a DC magnetron sputtering method.
r, etc.) and then the substrate is heated, and then the magnetic layer film and the protective layer film made of the Cr film and the Co alloy film are sequentially formed. During the formation of the magnetic layer film, bias is applied by a negative voltage of about 300V. Further, in order to minimize wear and damage on the medium surface due to contact of the head slider with the magnetic recording medium, a texture treatment is performed by imparting fine irregularities in the circumferential direction to the medium surface. Prior to film formation, the substrate is once taken out into the atmosphere outside the vacuum processing chamber and subjected to a texture treatment.

FIG. 7 is an enlarged schematic view of a portion of the substrate 2 supported by the substrate holder 3, where 11 is Ni.
An underlayer of P, a second underlayer of Cr 12 and a magnetic layer 13 of a Co alloy. When these layers are formed by the sputtering method, the groove wall 33a of the substrate holder 3 is used as the substrate 2
A shadow is formed on the substrate edge portion 2a and the film is not formed by sputtering. Even when the substrate holder 3 is of a hook type using the support spring 10, the support spring 10
And the substrate 2 are in the same situation.

[0008]

When a plurality of thin films are formed on a substrate made of an insulating material and at least one of the plurality of thin films is formed by a bias sputtering method, that is, the magnetic When the magnetic layer film is sputtered by applying a bias in the manufacture of a recording medium, there is a problem that the desired thin film cannot be formed because the bias cannot be applied as intended.

Referring to FIG. 7, the underlayer films 11 and 12
However, since the substrate 2 is exposed and is in direct contact with the substrate holder 3 without being formed by the substrate edge portion 2a of the substrate 2, electrical conduction is not formed between the substrate 2 and the substrate holder 3, and the substrate 2 is in an insulated state. Become. Therefore, the DC bias cannot be applied to the underlayer films 11 and 12, and the characteristics of the magnetic layer film are improved (in particular, the coercive force is improved).
This is a problem that cannot be achieved.

Further, since the resistance between the substrate and the substrate holder is high and unstable, an abnormal discharge is generated from the substrate supporting position on the substrate during the sputtering of the magnetic layer film or the protective layer film (see FIG. ) And 14 of FIG. 6 (b),
There was also the problem of becoming defective products.

In order to solve such a problem, after forming a base layer on an insulating substrate, the vacuum processing chamber is vented to the atmosphere to change the supporting position of the substrate and then exhausted again. Then, a method of forming the underlayer again can be considered, but it is not practical because there is a problem that the underlayer is oxidized in the atmosphere and particles are attached.

It is also conceivable to preliminarily plate (metal) the insulating material substrate and then introduce it into the vacuum processing chamber, but it is difficult to perform plating on the insulating material substrate such as glass, and there are many steps. It is costly and has problems associated with wet treatment such as treatment of plating waste liquid, and a dry process is desired.

The present invention has been made in view of the problems as described above, and a thin film having desired characteristics can be obtained by sequentially forming a plurality of thin films on a substrate made of an insulating material while reducing the number of steps. An object is to provide a forming method and apparatus.

[0014]

The thin film forming method of the present invention which achieves the above-mentioned object is to support a substrate made of an insulating material by a substrate supporting member in a vacuum processing chamber and to form a plurality of thin film layers on the surface of the substrate. In the method for forming a thin film in which at least one of the plurality of thin films is formed by a bias sputtering method, a layer closer to the substrate than the layer formed by the bias sputtering method is formed. It is characterized in that the supporting position of the substrate by the substrate supporting member is changed after the film formation and before the film formation by the bias sputtering method.

In the above, the substrate may be heated before the film formation by the bias sputtering method.

The change of the supporting position of the substrate by the substrate supporting member can be performed by moving the substrate or the substrate supporting member.

Further, each of the thin films having a plurality of layers can be formed in a plurality of vacuum processing chambers that are connected to each other so as to transfer the substrate, and between different vacuum processing chambers.

Next, in the thin film forming apparatus of the present invention, a plurality of vacuum processing chambers provided with a film forming mechanism for forming a thin film on the substrate are connected between the load lock chamber and the unload lock chamber. In the thin film forming apparatus, wherein the substrate can be transferred from the load lock chamber to the unload lock chamber through the plurality of vacuum processing chambers through the substrate supporting member, at least one vacuum processing in the vacuum processing chamber is performed. The chamber is equipped with a bias sputtering mechanism, and the vacuum processing chamber on the load lock chamber side of the vacuum processing chamber equipped with the bias sputtering mechanism is provided with a conversion mechanism for changing the supporting position of the substrate by the substrate supporting member. It is characterized by

A vacuum processing chamber having a substrate heating mechanism is interposed between a vacuum processing chamber having a conversion mechanism for changing the supporting position of the substrate by the substrate supporting member and a vacuum processing chamber having a bias sputtering mechanism. It can also be installed.

The conversion mechanism can be constructed by combining a substrate rotating mechanism, a substrate advancing / retreating mechanism, and a substrate up / down mechanism.

The substrate made of an insulating material in the present invention includes a disk-shaped substrate made of glass, alumina or other ceramics, polyimide plastic, crystallized glass or the like.

[0022]

According to the thin film forming method and apparatus of the present invention,
Before the film is formed by the bias sputtering method, the supporting position of the substrate by the substrate supporting member is changed.Therefore, when forming the film by the bias sputtering method, an electrical contact is secured between the substrate supporting member and the underlayer film to stabilize the bias application. ,
It can be done reliably.

The manufacturing process of the magnetic recording medium shown in FIG. 8 will be described below. That is, the underlayer films 11 and 12
At the time when the film is formed on the substrate 2 as shown in (a) and (b).
Touches the substrate holder 3 directly, while
When the supporting position of the substrate is changed by changing the relative positional relationship between the substrate 2 and the substrate holder 3 such as rotating the substrate 2 as shown in (c) and (d), the underlying layer is formed. The substrate edge 2a of the substrate 2 which was not present is the substrate holder 3
Of the substrate 2 and the substrate holder 3 and electrical continuity is secured through the underlying layer films 11 and 12. From this, it is possible to apply a bias voltage to the substrate 2.

[0024]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An example in which the present invention is applied to manufacture of a magnetic recording medium will be described below with reference to the drawings.

FIG. 1 is a block diagram of an apparatus for manufacturing a magnetic recording medium according to an embodiment, in which a plurality of vacuum processing chambers 1a, 1a are provided between a load lock chamber 15 and an unload lock chamber 16.
b, 1c, ... 1f are separated by sluice valves 17a, 17b, 17c ,.
The substrate holders 3a, 3b, ...
Can be sequentially transported to the unload lock chamber 16 side through the vacuum processing chambers 1a, 1b, ... And are supported by the substrate holders 3a, 3b ,.
On the other hand, the vacuum processing chambers 1a, 1b, ... Can perform predetermined processing. In the figure, 18 is a vacuum exhaust device, 19
Is a central hole of the substrate 2. The sluice valves 17b to 17f may not be installed.

Of the vacuum processing chambers 1a, 1b, ..., The vacuum processing chamber 1b is peculiar to the present invention and serves as a chamber for changing the supporting portion of the substrate 2. The other vacuum processing chambers are the same as the conventional ones, and the vacuum processing chamber 1a is
NiP film forming chamber as a base layer, vacuum processing chamber 1c is a substrate heating chamber, vacuum processing chamber 1d is a Cr film forming chamber as a second base layer, and vacuum processing chamber 1e.
Is CoCrTa, CoCrNi, CoC as a magnetic layer
The film forming chamber for a film of rPt or the like and the vacuum processing chamber 1f are for forming a film of a film of carbon or the like as a protective layer. Each of the vacuum processing chambers 1a, 1c ... 1f has 10 ⁻⁷ To
After exhausting to about rr, Ar gas was added at 3 × 10 ⁻³ To
It can be introduced into the rr table to perform sputtering. During the sputtering, the substrate 2 is kept stationary or running. The underlayer formed in the vacuum processing chamber 1a may be another film such as a Cr film.

As shown in FIG. 2, the vacuum processing chamber 1b, which is a chamber for changing the substrate supporting position by the substrate supporting member, is a substrate up-and-down mechanism which is installed below the traveling portion of the substrate holders 3a, 3b, ... As shown in FIG. A conversion mechanism including 20 and a substrate rotating mechanism 21 that is installed opposite to the side of the substrate 2 so as to be movable back and forth is installed.

The substrate raising / lowering mechanism 20 includes a vacuum processing chamber 1b.
An elevating plate 23 is provided on the bottom wall of the elevating plate 23 in parallel with the bottom wall via a bellows 22. An elevating plate 23 is installed outside the elevating plate 23 (atmosphere side) by a fluid pressure such as compressed air. A vertical rod 25 is erected on the inner side of the upper and lower ends of the upper and lower rods 25 so that the tip of the upper and lower rods 25 faces the lower portion of a substrate supporting member (movable vertically) 26 in the substrate holders 3a, 3b, .... The bellows 22 may have a vacuum sealing structure with an O-ring 27 as shown in FIG.

The substrate rotating mechanism 21 includes a vacuum processing chamber 1b.
A movable platen 17 is provided on the side wall of the via a bellows 28 (which may be an O-ring seal) in parallel with the side wall.
The movable platen 29 can be moved back and forth to the side wall of the vacuum processing chamber 1b by a slide cylinder 30 by fluid pressure, and the movable platen 2 can be moved.
A rotary shaft 31 is pierced through the shaft 9 in a sealed state, and a rotary motor 32 is connected to the outer end of the rotary shaft 31. The rotating shaft 31 is installed at the height of the center hole 19 of the substrate 2 when the substrate 2 is moved upward by the substrate lifting mechanism. The tip of the rotating shaft 31 is inserted into and removed from the center hole 19. It is possible.

The upper and lower rods 25 and the rotary shaft 31 are maintained in an upright state or a erected state by bearings or the like, but they are omitted in the figure in order to avoid complication.

According to the magnetic recording medium manufacturing apparatus of the above-mentioned embodiment, the insulating substrate 2 is attached to the substrate holders 3a, 3b ,.
Through the load lock chamber 15 into the apparatus in order, a NiP film is formed as a base layer in the vacuum processing chamber 1a, the supporting position of the substrate 2 is changed in the vacuum processing chamber 1b, and then in the vacuum processing chamber 1c. The substrate is heated, then a Cr film is formed as a second underlayer in the vacuum processing chamber 1d, a magnetic layer (CoCrTa or the like) film is formed in the vacuum processing chamber 1e, and a carbon film is formed as a protective layer in the vacuum processing chamber 1f. It is possible to sequentially take out the magnetic recording medium having the predetermined film formed of a plurality of thin films formed through the unload lock chamber 16 after being formed.

The NiP film and the Cr film as the underlayer are formed by first forming a NiP film with a predetermined thickness in the vacuum processing chamber 1a, and then forming the substrate 2 and the substrate holder 3a in the vacuum processing chamber 1b. , 3b, ... Support positions are changed, then the substrate 2 is heated in the vacuum processing chamber 1c, and C is heated in the vacuum processing chamber 1d.
The r film is formed.

In the case of the embodiment, the support positions of the substrate 2 and the substrate holders 3a, 3b, ... Are changed by rotating the substrate 2. That is, the vertical rod 25 of the substrate vertical mechanism 20 shown in FIG.
Is raised by the upper and lower cylinders 24,
The substrate 2 is temporarily raised, and in this state, the rotating shaft 31 of the substrate rotating mechanism 21 is advanced to the substrate 2 side via the slide cylinder 30, so that the tip of the rotating shaft 31 is brought into the central hole 19 of the substrate 2. insert. Next, the upper and lower rods 25 are lowered, the substrate 2 is rotated by the rotation motor 32, the upper and lower rods 25 are raised again, the rotary shaft 31 is retracted, and the upper and lower rods 25 are lowered again. The operation ends.

The angle of rotation of the substrate 2 about the rotating shaft 31 is determined by the shape of the substrate supporting member in the substrate holders 3a, 3b, ..., and becomes a shadow of the substrate supporting member during film formation in the vacuum processing chamber 1a. The portion where the film is not formed may be located outside the substrate supporting member. In a normal substrate holder, the range is about 30 to 180 degrees.

As described above, after changing the supporting positions of the substrate and the substrate holder in the vacuum processing chamber 1b, the vacuum processing chamber 1d is formed.
Since the underlayer film is formed again in, the substrate 2 transferred to the vacuum processing chamber 1e has the NiP film and Cr as the underlayer.
It is possible to secure an electrical contact between the film and the substrate supporting members of the substrate holders 3a, 3b, ... And to eliminate the portion where the underlayer film is not formed.

As a result, when the CoCrTa film as the magnetic layer and the carbon film as the protective layer are formed, NiP is used.
Substrate holders 3a, 3b, to the underlayer film of the film and the Cr film,
It is possible to apply a negative DC bias through the ... And improve the coercive force and corrosion resistance of the magnetic layer.
Further, due to the presence of a state in which the underlayer film is not formed and electrical conduction with the substrate supporting member is insufficient, abnormal discharge at the time of applying bias can be eliminated, and defective products can be avoided.

The continuous structure of the vacuum processing chambers 1a, 1b, ... Is not limited to the embodiment, and the heating chamber (vacuum processing chamber 1b) for heating the substrate 2 is eliminated. You can also

By performing the texture treatment on the surface of the substrate 2 in advance, it is not necessary to take it out to the outside in the middle of the film forming process.

Further, the structure for changing the supporting positions of the substrate and the substrate holder can be various modes as shown in FIG. 3 and subsequent figures.

In FIG. 3, a rotary shaft 31 is provided in the vacuum processing chamber 1b through an advancing / retreating mechanism 34, and the rotary shaft 3 is capable of advancing / retreating.
A substrate up-and-down mechanism 20 and a substrate rotation mechanism 21 are provided for 1 to serve as a conversion mechanism.

The advancing / retreating mechanism 34 has a supporting rod 36 installed via a bellows 35, and a cylinder 37 provided outside the bellows 35 allows the supporting rod 36 to move in and out, and a slide bearing is provided at the tip of the supporting rod 36. An upper and lower rod 39 is provided movably up and down via 38, and a rotary shaft 31 is supported on an upper end portion of the upper and lower rod 39 via a bearing 40.
The upper and lower rods 39 are biased downward by a coiled spring 41.

The substrate up-and-down mechanism 20 has the same structure as in FIG. 2, and the up-and-down rod 25 faces the lower end of the up-and-down rod 39 of the advancing and retracting mechanism 34.

The substrate rotating mechanism 21 is provided with a drive shaft 42 which can be connected / disconnected to / from the base end of the rotary shaft 31 via a bellows 43. The rotary motor 32 is connected to the outer end of the drive shaft 42 and a slide cylinder is provided. Drive shaft 42 is rotating shaft 3 at 30
It is configured to be able to move forward and backward with respect to 1. Reference numeral 44 in the figure denotes a coupling.

In this embodiment, first, the support rod 36 is advanced to the substrate 2 side by the cylinder 37 of the advancing / retreating mechanism 34, and the tip of the rotary shaft 31 is inserted into the central hole 19 of the substrate 2. Next, using the upper and lower cylinders 24 of the substrate raising and lowering mechanism 20, the upper and lower rods 25, 3
9 is raised to raise the substrate 2 together with the rotary shaft 31 from the substrate holders 3a, 3b, ....

Next, the drive shaft 42 is advanced to the substrate 2 side by the slide cylinder 30 of the substrate rotating mechanism 21, and the drive shaft 42 is connected to the rotating shaft 31 via the coupling 44.
The substrate 2 is rotated at a predetermined angle by the rotation motor 32.

Thereafter, the substrate 2 and the supporting portion of the substrate holder can be changed by returning the substrate 2 to the substrate holders 3a, 3b, ...

FIG. 4 shows support springs 10 and 10 in which several positions (three positions in the figure) of the substrate 2 are bent and formed into an L shape.
It is a conversion mechanism of the embodiment for the substrate holder 3 which is pressed and supported by.

The vacuum processing chamber 1b is provided with a substrate up-and-down mechanism 20 and a substrate rotating mechanism 21, and a retreating mechanism 45 for the support spring 10 as a converting mechanism.

The substrate up-and-down mechanism 20 and the substrate rotating mechanism 21 have the same structure as the embodiment of FIG.

The retracting mechanism 45 is provided with a latch rod 46, which is an L-shaped rod, on the top wall of the vacuum processing chamber 1b via a bellows 47, and a rotary motor 48 is connected to the outer end of the latch rod 46. In addition, the slide cylinder 49 allows the latch rod 46 to move up and down.

In this embodiment, first, the upper and lower rods 25 of the substrate raising and lowering mechanism 20 are raised by the upper and lower cylinders 24 to raise the substrate 2 together with the substrate supporting member 26 in the substrate holder, so that the lower peripheral edge of the substrate 2 is Unhook the support spring 10. By this raising operation, the central hole 19 of the substrate 2 and the rotating shaft 31 of the substrate rotating mechanism 21 are opposed to each other at the same height.

Then, the latching rod 46 of the retracting mechanism 45 is rotated by the rotary motor 48, the horizontal portion of the leading end of the latching rod 46 is inserted between the support spring 10 and the peripheral edge of the substrate 2, and then the slide cylinder 49 hooks. The stop bar 46 is raised to open the support spring 10 and the engagement with the substrate 2 is released.

Next, the rotating shaft 31 is moved forward by the slide cylinder 30 of the substrate rotating mechanism 21, the tip of the rotating shaft 31 is inserted into the center hole 19 of the substrate 2, and the vertical rod 25 of the substrate raising / lowering mechanism 20 is lowered. After removing the substrate support member 26 from the substrate 2, the rotation motor 32 rotates the substrate 2 by a predetermined angle.

By subsequently performing the operations opposite to the above, the supporting portions of the substrate 2 and the substrate holder 3 can be changed. The rotation angle of the substrate 2 by the rotation motor 32 is in the range of 1 degree to 10 degrees.

Although one substrate 2 is supported by the substrate holder 3 in this embodiment, a plurality of openings are formed in the rotary pallet, and each substrate is supported in each opening. And a structure in which one of the plurality of substrates is sequentially opposed to the above-described substrate vertical movement mechanism, the rotation mechanism, and the retracting mechanism of the latching rod 46 to perform a predetermined rotation operation. You can also do it.

Further, in each of the embodiments, the substrate 2 is rotated to change the supporting position, but the substrate holder side is rotated or slid vertically or horizontally to change the supporting position as a result. It is also possible to configure.

The manufacture of the magnetic recording medium of the above-mentioned embodiment is the first
Of Cu, Cr, Al, NiP or Ti as the underlayer of the above, and after changing the supporting position of the substrate by the substrate supporting member, a Cr film is formed as the second underlayer, and then CoCrTa as the magnetic layer, CoCrNi or CoCrPt
In the case of sequentially forming a film and a C film as a protective layer, after forming a Cr film as a first underlayer, the support position of the substrate by the substrate supporting member is changed, and then CoCrT as a magnetic layer is formed.
a, CoCrNi or CoCrPt film, C as protective layer
When the films are sequentially formed, Ni is further used as the first underlayer.
After forming a P, Cr or Al film, a Cr film is formed as a second underlayer, and then the substrate supporting position of the substrate supporting member is changed to form CoCrTa, CoCr as a magnetic layer.
This can be implemented in any case, such as when a Ni or CoCrPt film and a C film as a protective layer are sequentially formed. The change in the substrate supporting position of the substrate supporting member ensures electrical conduction between the substrate supporting member and the underlayer, and ensures reliable bias application during subsequent formation of the magnetic layer film and further the protective layer film. . This makes it possible to manufacture a magnetic recording medium in which the characteristics of the magnetic layer film are improved. In the example,
Substrate 2 and substrate holders 3, 3a, 3 which are substrate supporting members
Although a mechanism necessary for changing the supporting positions of b, ... Is installed in the vacuum processing chamber 1b and the supporting position is changed in the vacuum processing chamber, the vacuum processing chamber is used as the substrate heating chamber. It is also possible to perform an operation of changing the supporting position in another processing chamber in combination with the processing, as a configuration such as installing a mechanism for changing the supporting position of the substrate and the substrate supporting member in 1c. is there.

The present invention is not limited to the manufacture of magnetic recording media. When forming multiple layers of thin films on a substrate made of an insulating material, and when film formation by the bias sputtering method is performed, before the film formation, there is no electrical contact between the substrate support member and the already formed film. The purpose is to change the supporting position of the substrate by the substrate supporting member in order to secure the electrical continuity.

[0059]

As described above, according to the present invention, the supporting positions of the substrate and the substrate holder are changed before the film formation by the bias sputtering method.
There is an effect that the application of the DC bias can be ensured and the abnormal discharge can be eliminated to form a film having desired characteristics.

Since the support position of the substrate and the substrate holder is changed in the vacuum processing chamber and the substrate is not taken out into the atmosphere,
The number of processing steps can be reduced, and the problems of film oxidation and particle adhesion can be eliminated.

[Brief description of drawings]

FIG. 1 is a configuration diagram of an embodiment of the present invention.

2A and 2B are diagrams of a vacuum processing chamber equipped with the conversion mechanism of the embodiment, where FIG. 2A is a vertical side view and FIG. 2B is a vertical front view.

FIG. 3 is a vertical sectional side view of a vacuum processing chamber provided with a conversion mechanism of another embodiment of the present invention.

FIG. 4 is a view of a vacuum processing chamber provided with a conversion mechanism of another embodiment of the present invention, (a) is a vertical side view and (b) is a vertical front view.

FIG. 5 is a diagram of a vacuum processing chamber that constitutes a conventional manufacturing apparatus,
(A) is a vertical side view and (b) is a partially enlarged front view of a substrate holder portion.

FIG. 6 is a view of a vacuum processing chamber constituting another conventional manufacturing apparatus, (a) is a vertical sectional side view, and (b) is a partially enlarged front view of a substrate holder portion.

FIG. 7 is a schematic enlarged view of a substrate edge portion supported by a substrate holder in a conventional manufacturing apparatus.

8A and 8B are views showing a relationship between a substrate holder and a substrate in the present invention, FIG. 8A is a schematic enlarged view of a substrate edge portion at the time of forming an underlayer, FIG. 8B is a front view of the same substrate, and FIG. Is a schematic enlarged view of the edge portion of the substrate when the supporting position of the substrate is changed, (d)
Is a front view of the same substrate.

FIG. 9 is a sectional view showing another structure of the vacuum-sealed portion of the upper and lower rods according to the embodiment of the present invention.

[Explanation of symbols]

 1, 1a, 1b, ... Vacuum processing chamber 2 Substrate 2a Substrate edge 3,3a, 3b, ... Substrate holder 4 Transfer mechanism 5 Target 8 Biasing power supply 9 Insulating material 10 Support spring 11 NiP underlayer 12 Second underlayer 13 Magnetic layer 14 Abnormal discharge 15 Load lock chamber 16 Unload lock chamber 17a, 17b, ... Gate valve 18 Vacuum exhaust device 19 Center hole 20 Substrate up / down mechanism 21 Substrate rotation mechanism 33 Groove wall 34 Advance mechanism 45 Evacuation mechanism

Claims (8)

[Claims] 1. A method of supporting a substrate made of an insulating material by a substrate supporting member in a vacuum processing chamber and sequentially forming a plurality of thin films on the surface of the substrate, wherein at least one of the plurality of thin films is formed. In a thin film forming method in which one layer is formed by a bias sputtering method, after the formation of a layer closer to the substrate than the layer formed by the bias sputtering method and before the film formation by the bias sputtering method, the substrate supporting member. A method for forming a thin film, characterized in that the supporting position of the substrate is changed. 2. The thin film forming method according to claim 1, wherein the substrate is heated before the film formation by the bias sputtering method. 3. The thin film forming method according to claim 1, wherein the support position of the substrate is changed by the substrate support member by moving the substrate or the substrate support member. 4. The thin film of each of the plurality of layers is formed in a different vacuum processing chamber among a plurality of vacuum processing chambers that are connected so as to transfer a substrate. The method for forming a thin film as described in. 5. The multi-layer thin film comprises an underlayer film, a magnetic layer film,
The protective layer film is included, and the change of the supporting position of the substrate by the substrate supporting member is performed after the formation of the underlayer film.
5. The thin film forming method as described in any one of 4 to 4. 6. A plurality of vacuum processing chambers provided with a film forming mechanism for forming a thin film on a substrate are continuously provided between the load lock chamber and the unload lock chamber, and the substrate is the substrate. In a thin film forming apparatus capable of being transferred from a load lock chamber to a unload lock chamber through a plurality of vacuum processing chambers via a supporting member, at least one of the vacuum processing chambers is provided with a bias sputtering mechanism. And a vacuum processing chamber closer to the load lock chamber than the vacuum processing chamber equipped with the bias sputtering mechanism is provided with a conversion mechanism for changing the supporting position of the substrate by the substrate supporting member. apparatus. 7. A vacuum processing chamber provided with a substrate heating mechanism between a vacuum processing chamber provided with a conversion mechanism for changing a supporting position of a substrate by a substrate supporting member and a vacuum processing chamber provided with a bias sputtering mechanism. The thin film forming apparatus according to claim 6, wherein 8. The thin film forming apparatus according to claim 6, wherein the converting mechanism is configured by combining a substrate rotating mechanism, a substrate advancing / retreating mechanism, and a substrate up / down mechanism.