JP2001207266A - Substrate supporting device for film deposition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the direct deposition of a carbon film from occurring on the outer circumferential part and the inner circumferential part of a supporting board supporting a substrate by contriving suitable shapes of the outer circumferential part and the inner circumferential part of the supporting board, in the case a carbon film is deposited by a PCVD method on a metallic film formed by a sputtering method, and to prevent the peeling of the carbon film from occurring in a short period. SOLUTION: A supporting board 42 for double side film deposition has two main sides 58 and 59. The thickness(t) of the supporting board 42 is 6 mm. The tip edge 55 of the outer circumferential part 54 is vertical to the main sides 58 and 59, and the thickness W of the tip edge 55 is preferably controlled to 2 mm. In this implementation, W is assumed to be 1 mm. The thickness W of the tip edge 55 is extremely thinner than the thickness of the supporting board 42 like this. Then, the main sides 58 and 59 and the tip edge 55 are connected by a pair of slopes 60 and 61. The slopes 60 and 61 are sloped by an angle θ to the main sides 58 and 59. The sloping angle θ is preferably controlled to 60 deg. or less. In this performing form, θ=30 deg.. The same is applied to the inner circumferential part 56 as of the outer circumferential part.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate supporting apparatus for supporting a substrate on which a thin film is formed in a film forming apparatus such as sputtering, vacuum deposition, and plasma CVD.

[0002]

2. Description of the Related Art When manufacturing electronic devices such as semiconductor devices and liquid crystal displays, and information recording disks such as hard disks and magneto-optical disks, sputtering,
2. Description of the Related Art A film forming process using a film forming method such as vacuum evaporation and plasma CVD is performed.

In the process of manufacturing a hard disk, thin films are formed on both sides of a disk-shaped substrate made of aluminum or glass. This thin film is, as shown in FIG.
0, in order from the 0 side, a metal base film 12 of Cr or the like, CoCrT
and a protective film 16 made of carbon or the like. A lubricant 18 is applied thereon. As an example of the thickness of the film, the thickness of the metal base film 12 is 25 nm, the thickness of the magnetic recording film 14 is 20 nm, the thickness of the protective film 16 is 10 nm, and the thickness of the lubricant 18 is 2 nm. In the hard disk drive (HDD), the protective film 16 is used when the head and the disk surface come into contact with each other when the disk starts and stops rotating.
4 and also serves to protect the magnetic recording film 14 from being corroded by contact with the atmosphere.

Heretofore, a sputtering method has often been employed for forming a thin film of a magnetic recording medium. As described below, a protective film is formed from a sputtering method to a plasma CVD (PDVD) method. They are starting to switch.

[0005] In recent years, there has been an increasing demand for higher coercive force and ultrafine particles of magnetic media, and various developments have been made to realize higher recording density. To increase the recording density, HDD
It is effective to minimize the distance between the head and the magnetic recording film (total of the flying height of the head and the thickness of the protective film) as much as possible. In FIG. 2, the distance d (head flying height) between the head 22 at the tip of the slider 20 of the HDD and the disk surface is shown.
Is about 25 nm. The thickness of the carbon protective film 16 is 1
It is about 0 nm. The total of 35 nm is the distance between the HDD head 22 and the magnetic recording film 14. In order to shorten this distance, it is required to further reduce the thickness of the protective film 16.

When the carbon protective film formed by the sputtering method is thinned to about 10 nm, the durability and the corrosion resistance are reduced, and the carbon protective film cannot exhibit a sufficient function as a protective film. Therefore, instead of the sputtering method, it has been developed to form a carbon protective film by using a PCVD method that can obtain a dense, high-hardness, and highly durable film even when thin (for example, JP-A-11-229
No. 150 and JP-A-11-246792).

The carbon film can be roughly classified into an amorphous carbon film and a crystallized carbon film. The crystallized carbon film usually has a graphite structure, but there is also a carbon having a structure similar to diamond, that is, a so-called diamond-like carbon (DLC). The carbon film formed by the PCVD method has a high DLC ratio, becomes a dense and hard film, and has good durability even when thin.

Next, the structure of the substrate support device will be described. In order to form a film on both surfaces of the hard disk without forming a shadow, a substrate supporting device of a type in which three outermost portions of the substrate are supported by claws is used (for example, Japanese Patent Laid-Open No. 11-1934).
No. 68 and JP-A-11-229150). FIG. 3 is a schematic front view of a conventional substrate supporting apparatus used for forming a film on both surfaces of a hard disk. A substantially circular substrate mounting hole 28 is provided near the center of the support plate 26 of the substrate supporting device 24, and three support claws 3 are formed from the inner periphery of the substrate mounting hole 28.
0 protrudes toward the center of the hole. Hole 11 in the center
The open hard disk substrate 10 has a vertical posture, and the outermost periphery thereof is supported by the three support claws 30. When the film forming process is performed on both surfaces of the substrate 10, not only the substrate 10 but also the entire surface of the support plate 26 (that is, both surfaces and the outer peripheral edge 3).
2 and the film also adheres to the inner peripheral edge 34) of the substrate mounting hole 28. In the following description, the inner peripheral edge 34 of the substrate mounting hole 28 of the support plate 26 may be simply referred to as the inner peripheral edge 34 of the support plate 26.

A film adheres to the outer peripheral edge 32 and the inner peripheral edge 34 of the support plate 26 by wraparound. The wraparound situation differs greatly between the sputtering method and the PCVD method. In the sputtering method, sputtered particles are emitted from the target according to the cosine law, so that a film is not easily deposited at a position where the target is shadowed. On the other hand, the PCVD method is a film forming method in which deposition is performed by using the discharge of a reactive gas, and therefore, the PCVD method easily wraps around the outer peripheral edge and the inner peripheral edge of the support plate and deposits as compared with the sputtering method.

FIG. 4 (a) shows the supporting plate 26 of FIG.
It is sectional drawing cut | disconnected by line 4a. The thickness of the support plate 26 is 6
mm. The outer peripheral edge 32 and the inner peripheral edge 34 are perpendicular to the main surfaces 36 and 38 of the support plate 26. Here, the main surface refers to a surface parallel to the film formation surface of the substrate and facing the same direction as the film formation surface. The support plate 26 for film formation on both sides has two main surfaces 36 and 38.

FIG. 4B schematically shows a state in which a film adheres near a corner between the main surface 36 and the outer peripheral edge 32. When the sputtered particles fly from above the drawing, a columnar, dense film 37 of crystal grain boundaries is deposited on the main surface 36 of the support plate. On the other hand, the porous film 33 is deposited near the main surface 36 of the outer peripheral edge 32 due to the slight wraparound of the sputtered particles, which has many surface irregularities. Of the outer peripheral edge 32,
Sputtered particles no longer reach the portion away from the main surface 36, and the film does not adhere. When the support plate is thick, a region where the film does not adhere to the outer peripheral edge 32 is generated. Similarly, there is a region where the film does not adhere to the inner peripheral edge 34. If the thickness of the support plate 26 is considerably reduced, the outer peripheral edge 32
There is no area where the film does not adhere to the inner peripheral edge 34, but it is 6 mm in order to fix the support claws to the support plate 26 with screws and to maintain the rigidity of the support plate 26.
A certain thickness is required.

[0012]

FIG. 4C shows the state of film adhesion to the outer peripheral edge 32 of the support plate when a metal film and a carbon film are formed in this order on both surfaces of the substrate. Metal film 15
Although the metal film 15 (which is composed of a metal base film and a magnetic recording film) is formed by a sputtering method, the metal film 15 has a small amount of wraparound to the outer peripheral edge 32, and there is an area where the metal film 15 is not deposited. The carbon film 16 is formed by a PCVD method,
It is sufficiently wrapped around the outer peripheral edge 32 to be deposited. As a result, the carbon film 16 is deposited directly on the support plate 26 near the center of the outer peripheral edge 32 of the support plate 26. When the carbon film 16 is directly deposited on the support plate 26 as described above,
The following problems occur.

First, the internal stress of the film will be described. Although it depends on the type and thickness of the film, the internal stress of the sputtered film is a compressive stress on the order of 10.sup.9 dynes per square centimeter. For example, 5mm x 50mm x
When a carbon film having a thickness of 300 nm is deposited on a Corning 0211 glass substrate having a size of 70 μm by a sputtering method, the internal stress of the film becomes a compressive stress of 6 × 10 9 dynes per square centimeter. On the other hand, when a carbon film of the same thickness is deposited on the same substrate by the PCVD method, the internal stress becomes larger than that of the sputtering method, and the compressive stress of 1 × 10 10 dynes per square centimeter is applied. Becomes Further, in the PCVD method, it is indispensable to apply a negative bias to the substrate (and a substrate supporting device for supporting the substrate) in order to improve the deposition rate. The stress (compressive stress) increases even more.

As described above, the internal stress of the carbon film formed by the PCVD method increases. However, if the carbon film is deposited on the metal film, the internal stress is reduced by the metal film. On the other hand, the carbon film deposited directly on the support plate is less likely to alleviate its internal stress, and the internal stress increases as its thickness increases. When the peeling force caused by the internal stress exceeds the adhesive force between the carbon film and the support plate, the carbon film directly deposited on the support plate is peeled from the support plate. The material of the support plate is stainless steel or aluminum. However, when a carbon film is deposited on such a support plate by the PCVD method, the adhesion becomes weaker than the adhesion on the metal film, and When the thickness becomes about 50 nm, it peels off from the support plate.

Since the substrate supporting device passes through the respective film forming chambers of the hard disk film forming device together with the substrate, a metal film or a carbon film is deposited on the supporting plate. When one film forming cycle is completed, the substrate supporting device mounts a new substrate and repeats the film forming cycle. Then, in a region where the metal film is not deposited on the outer peripheral edge or the inner peripheral edge of the support plate of the substrate support device, only the carbon film formed by the PCVD method is deposited on the support plate. I do. When the carbon film is peeled off, it becomes particles and adversely affects the film formation. Therefore, it is necessary to clean the substrate supporting device before the carbon film is peeled off. Therefore, if there is a situation in which only the carbon film is deposited by the PCVD method in a region where the metal film is not deposited, the maintenance cycle of the substrate supporting device is significantly shortened, and the production efficiency is reduced.

The adhesion of the film to the support plate can be reduced by roughening the surface of the support plate (for example, by blasting with alumina beads) or by forming a sprayed aluminum film on the support plate. Can be enhanced.
This method is very effective when depositing a metal film on a support plate. However, when depositing a carbon film by a PCVD method on a support plate, the internal stress of the carbon film is extremely large. Even if such a treatment is performed, an effect that can at least double the cleaning life of the substrate supporting apparatus can be expected.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a support plate for supporting a substrate when depositing a carbon film by a PCVD method on a metal film by a sputtering method. By devising the shapes of the outer peripheral portion and the inner peripheral portion of the support plate, it is possible to prevent the carbon film from directly depositing on the outer peripheral portion and the inner peripheral portion of the support plate and to prevent the carbon film from peeling off in a short time. .

[0018]

The substrate supporting apparatus for film formation according to the present invention is applied to an apparatus having a flat supporting plate having a substrate mounting hole. And this invention is characterized by the cross-sectional shape of the outer peripheral part and the inner peripheral part of this support plate. The support plate is
It has at least one main surface parallel to the film formation surface of the substrate and oriented in the same direction as the film formation surface. The outer peripheral portion and the inner peripheral portion of the support plate include a leading edge perpendicular to the main surface and an inclined surface connecting the principal surface and the leading edge. The thickness of the leading edge (the thickness in the thickness direction of the support plate) is 2 mm or less in the case of a support plate for double-sided film formation, and 1 mm or less in the case of a support plate for single-sided film formation. More preferably, the thickness of the tip edge is 1 mm or less in the case of a support plate for double-sided film formation,
In the case of a support plate for single-sided film formation, the thickness is 0.5 mm or less.

When a metal film is formed on a substrate by a sputtering method and a carbon film is formed thereon by a plasma CVD method, a thickness of a leading edge perpendicular to a main surface of a supporting plate for supporting the substrate is formed. By reducing the height, a metal film is deposited on the entire edge of the tip by the sputtering method. Therefore, all carbon films formed by the plasma CVD method are deposited on the metal film, and are not directly deposited on the support plate. Therefore, compared with the case where the carbon film formed by the PCVD method is directly deposited on the support plate,
The time required for the film deposited on the support plate to peel off increases,
The maintenance life of the substrate support device is extended.

The inclination angle of the above-mentioned inclined surface (the angle formed with the main surface)
Is preferably 60 ° or less. Then, a metal film is reliably deposited on the inclined surface by the sputtering method. When the inclination angle is larger than 60 °, the inclined surface approaches a state “perpendicular to the main surface”, and it becomes difficult for the metal film to be deposited on the inclined surface by the sputtering method, and the sputter particles wrap around the leading edge. Is also reduced.

Further, the cross-sectional shape of the outer peripheral portion and the inner peripheral portion of the support plate can be a smooth convex curve. In this case, the outer peripheral portion and the inner peripheral portion have no portions perpendicular to the main surface, and the metal film is deposited by the sputtering method in all regions of the outer peripheral portion and the inner peripheral portion.

[0022]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 5 is a front view showing one embodiment of the substrate support device of the present invention. The substrate support device 40 includes a support plate 42 having a thickness of 6 mm.
A substantially circular substrate mounting hole 44 is provided near the center of the support plate 42. From the inner periphery of the substrate mounting hole 44, two upper supporting claws 46 and 47 and one lower supporting claw 48 are formed. Protruding towards the center. The hard disk substrate 10 having the hole 11 in the center is in a vertical posture, and the outermost periphery thereof is supported by three support claws 46, 47, and 48. In order to form a film on the hard disk substrate 10 using the substrate supporting device 40, a film forming device described in JP-A-11-229150 can be used. That is, the substrate supporting device 40 supporting the substrate 10 is placed in a chamber for forming a metal base film by a sputtering method, a chamber for forming a magnetic film by a sputtering method, or a chamber for forming a carbon protective film by a PCVD method. The film is passed one after another to perform a desired film forming operation.

FIG. 6 is a perspective view showing the upper supporting claw 46 and its fixing structure. A notch 49 for supporting the substrate is formed at a free end of the upper supporting claw 46 having elasticity. The base end of the upper support claw 46 is fixed to the support plate by a plate nut 50 and two screws 52. The width F of the upper support claw 46 and the plate nut 50 is substantially the same as the thickness of the support plate. In order to fix the upper support claws 46 to the support plate with the screws 52, these widths F need to be about 6 mm,
The thickness of the support plate also needs to be about 6 mm.

FIG. 1A is a sectional view of the support plate 42 shown in FIG.
It is sectional drawing cut | disconnected by the a line. The right end in FIG. 1A is an outer peripheral portion 54 of the support plate 42, and the left end is an inner peripheral portion 56 of the substrate mounting hole. Since the outer peripheral portion 54 and the inner peripheral portion 56 are symmetrical in this cross-sectional shape, only the outer peripheral portion 54 will be described in detail. In the support plate 42, there is a surface parallel to the film-forming surface of the substrate 10 to be supported and facing the same direction as the film-forming surface, but this is referred to as a main surface. The support plate 42 for double-sided film formation has two main surfaces 58 and 59. The thickness t of the support plate 42 is 6 mm. Tip edge 5 of outer peripheral portion 54
5 is perpendicular to the main surfaces 58 and 59, and the thickness W of the leading edge 55 is preferably 2 mm or less. That is, it is preferable that the wraparound distance from one main surface side is 1 mm or less. In this embodiment, W = 1 mm. That is, the wrap distance from one of the main surfaces is 0.5 mm. As described above, the thickness W of the leading edge 55 is considerably smaller than the thickness of the support plate 42. And the main surfaces 58, 5
9 and the leading edge 55 are connected by a pair of inclined surfaces 60 and 61. The inclined surfaces 60 and 61 are inclined by an angle θ with respect to the main surfaces 58 and 59. The inclination angle θ is preferably set to 60 ° or less. In this embodiment, θ = 30 °.

No matter how small the inclination angle θ is, the problem of peeling of the deposited film does not occur. However, when the thickness t of the support plate and the width W of the leading edge 55 are set to a constant value and the inclination angle θ is reduced, the inclination surfaces 60 and 6 become smaller.
The distance L in the direction parallel to the main surface of No. 1 increases steadily. In reality, since the size of the support plate cannot be increased indefinitely, the inclination angle θ is set to an appropriate angle that is not so small. In this embodiment, θ is set to 30 °. Then, t = 6 mm, W = 1 mm, θ = 30
°, the distance L is 4.33 mm.

FIG. 1B shows a state in which a metal film 15 is formed on a substrate supported by a support plate 42 by a sputtering method and PCVD is formed thereon.
FIG. 4 is a cross-sectional view of the vicinity of an outer peripheral portion of a support plate 42 when a carbon film 16 is formed by a method. The metal film 15 covers all the main surfaces 58, 59, the inclined surfaces 60, 61, and the leading edge 55 of the support plate 42. Since the width W of the leading edge 55 is as small as 1 mm, the sputtered particles also wrap around the leading edge 55 from the side of the two inclined surfaces 60 and 61, and the metal film 15 adheres, and the support plate 42 is exposed. I haven't. Therefore,
In all regions of the outer peripheral portion 54, the carbon film 16 is deposited on the metal film 15. The carbon film 16 is not directly deposited on the support plate 42. Therefore, using this support plate 42, a metal film is
Even if a carbon film is formed by the VD method and the film formation cycle is repeated, the carbon film is always deposited on the metal film. As a result, the internal stress of the carbon film is alleviated, and the life until the deposited film peels is significantly extended as compared with the conventional support plate. Therefore, the number of lamination times of the metal film and the carbon film until the deposited film peels can be greatly increased. According to the experiment of the inventor, the carbon film was not peeled off from the support plate until 10 days (approximately 50,000 laminations), which is the number of maintenance days of the hard disk deposition device, elapsed, and the The maintenance time could be extended to the same extent as the maintenance time of the hard disk deposition system.

FIG. 7 is a sectional view of some modified examples of the support plate for double-sided film formation. These sectional views correspond to the sectional view shown in FIG. FIG. 7A shows FIG.
The corners in (a) are smoothly connected by a curve. That is, in FIG. 1A, a corner where the main surface 58 contacts the inclined surface 60 and a corner where the principal surface 59 contacts the inclined surface 61 are connected by smooth curves 74 and 76, and two more inclined surfaces are connected. When 60 and 61 are smoothly connected by an arc 78, the result is as shown in FIG.

FIG. 7 (b) shows a case where the width of the leading edge 55 in FIG. 1 (a) is reduced to the minimum, that is, zero. In this case, the two inclined surfaces 60 and 61 come into contact at an acute angle. Even in this case, the metal film formed by the sputtering method adheres to all regions of the outer peripheral portion and the inner peripheral portion, so that the carbon film does not directly adhere to the support plate.
In that sense, the effects of the present invention can be obtained. However, FIG.
Compared to (a), the deposited film is more likely to be peeled off from the sharp tip 62.

FIG. 7C shows a semicircle 64 in cross section of the outer peripheral portion and the inner peripheral portion. FIG. 7D shows an elliptical arc 66 in the cross-sectional shape of the outer peripheral portion and the inner peripheral portion. As described above, even when the cross-sectional shapes of the outer peripheral portion and the inner peripheral portion are made into a smooth convex curve, the metal film formed by the sputtering method adheres to all regions of the outer peripheral portion and the inner peripheral portion. In either cross-sectional shape, there is no region perpendicular to the main surfaces 58 and 59. In addition,
The cross-sectional shape of FIG. 7D is more preferable than that of FIG. 7C because the area E close to “perpendicular to the main surface” is smaller.

FIG. 8A is a sectional view similar to FIG. 1A of the support plate 80 for one-sided film formation. In the support plate 80 for one-sided film formation, there is only one main surface 68 parallel to the film formation surface of the substrate and oriented in the same direction as the film formation surface. The thickness W of the leading edge 70 perpendicular to the main surface 68 is
The main surface 68 and the leading edge 70
Are connected by an inclined surface 69. In the outer peripheral portion and the inner peripheral portion, the thickness W of the tip edge 70 perpendicular to the main surface 68 is preferably set to 1 mm or less. In this embodiment, W = 0.5 mm
It is. In the support plate 80 for one-sided film formation, the maximum allowable value of the thickness W of the front-end edge is limited to that for the double-sided film formation because the sputtered particles wrapping around the front-end edge 70 are only from one main surface 68 side. Of the support plate.

FIG. 8B shows an example in which the cross-sectional shape on the main surface 68 side of the outer peripheral portion and the inner peripheral portion in the support plate 80 for one-side film formation is a smooth convex curve 82.

When the sectional shape is as shown in FIG.
At the outer peripheral portion and the inner peripheral portion, a metal film is deposited on the inclined surface 69 and the tip edge 70 by a sputtering method, and a carbon film is deposited thereon by a PCVD method. FIG. 8B
However, in the curve 82, a metal film is deposited by the sputtering method, and a carbon film is deposited thereon by the PCVD method. On the other hand, in FIGS.
At 73, a metal film is not deposited by the sputtering method, but a carbon film by the PCVD method may be slightly deposited due to wraparound. In this case, the carbon film is deposited directly on the support plate 80, but since the deposition rate is very low, the carbon film does not peel off before the maintenance time of the film forming apparatus comes, and no problem occurs. You may.

FIG. 9A is a plan view showing the positional relationship between the inner peripheral portion 56 and the substrate 10 of the support plate 42 having the cross-sectional shape of FIG. The cross section of the support plate 42 is shown. The substrate 10 is located at the center of the support plate 42 in the thickness direction. As a result, a large step cannot be formed between the inclined surfaces 60 and 61 near the inner peripheral portion 56 of the support plate 42 and the surface of the substrate 10. If there is a large step, when a large bias voltage is applied to the substrate 10 and the support plate 42 to form a film, a problem occurs in that the recording output waveform is modulated near the outer peripheral portion of the substrate 10.

FIG. 9B is a plan view showing the positional relationship between the inner peripheral portion 56 and the substrate 10 of the support plate 80 having the cross-sectional shape of FIG. The substrate 10 is arranged near the center of the thickness of the support plate 80 in the thickness direction of the support plate 80.

[0035]

According to the substrate support apparatus of the present invention, a metal film is formed on a substrate by a sputtering method by devising a cross-sectional shape of an outer peripheral portion and an inner peripheral portion of a support plate, and a PCV is formed thereon.
When a carbon film is formed by the method D, a metal film is deposited by a sputtering method in all regions of an outer peripheral portion and an inner peripheral portion of a support plate for supporting a substrate. This allows P
All carbon films formed by the CVD method are deposited on the metal film, and are not directly deposited on the support plate. Therefore,
Compared with the case where the carbon film formed by the PCVD method is directly deposited on the support plate, the period until the film deposited on the support plate is peeled is longer, and the maintenance life of the substrate support apparatus is extended.

[Brief description of the drawings]

1A is a cross-sectional view taken along line 1a-1a in FIG. 5, and FIG. 1B is a cross-sectional view showing a state of attachment of a sputtering film and a PCVD film to an outer peripheral portion.

FIG. 2 is a cross-sectional view schematically illustrating a film formation structure of a hard disk substrate.

FIG. 3 is a schematic front view of a conventional substrate supporting device.

4A is a cross-sectional view taken along line 4a-4a in FIG. 3, FIG. 4B is a cross-sectional view showing the state of adhesion of a sputtering film to a corner of a main surface and an outer peripheral portion, and FIG. FIG. 4 is a cross-sectional view showing the state of adhesion of a sputtering film and a PCVD film.

FIG. 5 is a front view of one embodiment of the present invention.

FIG. 6 is a perspective view showing an upper support claw and a fixing structure thereof.

FIG. 7 is a cross-sectional view of some modified examples of a support plate for double-sided film formation.

FIG. 8 is a cross-sectional view of some modified examples of the support plate for double-sided film formation.

FIG. 9 is a plan view showing some positional relationships between the inner peripheral portion of the support plate and the substrate.

[Explanation of symbols]

 Reference Signs List 40 substrate supporting device 42 support plate 44 substrate mounting hole 54 outer peripheral portion 55 leading edge 56 inner peripheral portion 58, 59 main surface 60, 61 inclined surface

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Naoki Watanabe 5-8-1, Yotsuya, Fuchu-shi, Tokyo Inside Anelva Co., Ltd. (72) Inventor Seishi Horiguchi 5-81-1, Yotsuya, Fuchu-shi, Tokyo Anelva F term in reference (reference) 4K029 BD11 CA05 GA03 JA01 JA06 4K030 BA27 FA01 GA02 HA04 LA20 5D112 AA05 AA07 AA24 BB01 BC05 FA04 FA09 FB25 5F031 CA01 CA02 CA05 HA10 HA24 HA27 MA28 MA29

Claims (5)

[Claims] 1. A film-forming substrate supporting apparatus having the following features. (A) This substrate support device includes a flat support plate that can support a substrate for film formation. (B) The support plate has at least one main surface parallel to the film formation surface of the substrate and facing in the same direction as the film formation surface, and an outer peripheral portion. (C) The support plate includes at least one substrate mounting hole penetrating the support plate and a plurality of support pieces protruding from an inner peripheral portion of the substrate mounting hole and capable of supporting an outer edge of the substrate. ing. (D) The outer peripheral portion and the inner peripheral portion include a leading edge perpendicular to the main surface, and an inclined surface connecting the principal surface and the leading edge. (E) the thickness of the front edge in the thickness direction of the support plate is 2 mm or less in the case of a support plate for double-sided film formation;
In the case of a support plate for one-sided film formation, the thickness is 1 mm or less. 2. The substrate supporting apparatus according to claim 1, wherein said inclined surface forms an angle of 60 ° or less with respect to said main surface. 3. The substrate support device according to claim 1, wherein a thickness of the front end edge in a thickness direction of the support plate is 1 mm or less in a case of a support plate for double-sided film formation. A substrate support device characterized by being 0.5 mm or less in the case of a support plate for single-sided film formation. 4. A film-forming substrate supporting apparatus having the following features. (A) This substrate support device includes a flat support plate that can support a substrate for film formation. (B) The support plate has at least one main surface parallel to the film formation surface of the substrate and facing in the same direction as the film formation surface, and an outer peripheral portion. (C) The support plate includes at least one substrate mounting hole penetrating the support plate and a plurality of support pieces protruding from an inner peripheral portion of the substrate mounting hole and capable of supporting an outer edge of the substrate. ing. (D) The cross-sectional shapes of the outer peripheral portion and the inner peripheral portion are smooth convex curves. 5. The substrate supporting apparatus according to claim 1, wherein a metal film is formed on the substrate by a sputtering method, and a carbon film is formed on the metal film by a plasma CVD method. A substrate support device, which is used in the case where the substrate is supported.