Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/26—Bombardment with radiation
  • H01L21/263—Bombardment with radiation with high-energy radiation
  • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
  • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
  • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
  • H01J37/3002—Details
  • H01J37/3007—Electron or ion-optical systems
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
  • H01J2237/04—Means for controlling the discharge
  • H01J2237/049—Focusing means
  • H01J2237/0492—Lens systems

Definitions

• the invention relates generally to ion implantation, and more particularly, to architecture for a ribbon ion beam ion implanter system.
• Ion implantation is a standard technique for introducing conductivity altering impurities into, or doping, semiconductor wafers.
• a typical ion implantation process uses an energetic ion beam to introduce impurities into work pieces, i.e., semiconductor wafers.
• introducing the impurities at a uniform depth and dose into the wafers is important to ensure that semiconductor devices being formed operate properly.
• FIG. 1 shows schematically, in three dimensions, a conventional implantation of ions into a wafer.
• X-Axis and Y-Axis constitute a transverse ion beam scan plane.
• An ion beam is delivered (desirably) parallel to the Z-Axis and strikes the planar surface of the wafer.
• the X-Axis is horizontally perpendicular to the Z-Axis.
• the ion beam is a ribbon along the X-Axis.
• the Y-Axis is vertically perpendicular to the ion beam plane (i.e., the XZ-coordinate plane).
• the wafer is scanned up and down along another scan path parallel to the Y-Axis by moving the wafer up and down.
• the angle of the ion beam during implantation is important to control the angle of the ion beam during implantation to maintain a desired parallelism (i.e., desired direction) of the ion trajectories relative to a wafer's crystal structure.
• the angle of the ion beam should be known and controlled to a range of error of less than 1 ° from parallel to the desired direction, especially for high energy implants and channeled implants.
• transport length is added to the system, which further impairs the delivery of the low energy beam to the wafer.
• the architecture includes an acceleration/deceleration parallelizing lens system for receiving a fanned ribbon ion beam and for at least parallelizing (and perhaps also accelerate or decelerate) the fanned ribbon ion beam into a substantially parallel ribbon ion beam, and an energy filter system downstream from the acceleration/deceleration parallelizing lens system and prior to a work piece to be implanted by the substantially parallel ribbon ion beam.
• the acceleration/deceleration parallelizing lens system includes lenses for at least parallelizing (and perhaps also accelerate or decelerate) the fanned ribbon ion beam and acceleration/deceleration lenses for accelerating or decelerating the substantially parallel ribbon ion beam.
• the parallelizing lens allows delivery of a high current ribbon ion beam to the work piece with energy that can extend down to as low as approximately 200 eV.
• the energy filter system provides a substantially parallel ribbon ion beam that is substantially free of energy contamination.
• a first aspect of the invention provides an ion implanter system, comprising: a ribbon ion beam generator for generating a fanned ribbon ion beam; an acceleration/deceleration parallelizing lens system downstream of the ribbon ion beam generator for at least parallelizing the fanned ribbon ion beam into a substantially parallel ribbon ion beam; and an energy filter system downstream from the acceleration/deceleration parallelizing lens system and prior to a work piece to be implanted by the substantially parallel ribbon ion beam.
• a second aspect of the invention provides a method of ion implanting a work piece, the method comprising the steps of: generating a fanned ribbon ion beam; substantially simultaneously parallelizing and one of accelerating and decelerating the fanned ribbon ion beam into a substantially parallel ribbon ion beam; filtering energy contamination from the ribbon ion beam immediately after the parallelizing step; and implanting the substantially parallel ribbon ion beam into a work piece.
• a third aspect of the invention provides an architecture for a ribbon ion beam ion im planter system, the architecture comprising: an acceleration/deceleration parallelizing lens system for receiving a fanned ribbon ion beam and for at least parallelizing the fanned ribbon ion beam into a substantially parallel ribbon ion beam; and an energy filter system downstream from the acceleration/deceleration parallelizing lens system and prior to a work piece to be implanted by the substantially parallel ribbon ion beam.
• FIG. 1 shows a three-dimensional view of ion beam implantation of a wafer.
• FIG. 2 shows a ribbon ion beam ion implanter system including architecture according to one embodiment of the invention.
• FIG. 3 shows a flow diagram of one embodiment of a method of ion implanting according to the invention.
• Ion implanter system 102 includes a ribbon ion beam generator 104, which may include, for example, an ion source 106, a mass analyzer magnet 108, and a mass resolving aperture 110.
• Ion implanter system 102 may be a high current system, e.g., delivering an ion beam with over ten milli-Amps (mA).
• the initial ion beam may be generated using conventional narrow slit extraction-point-to-point optics (diverging solid line) or long slit extraction-parallel-to-point optics (parallel dashed line).
• mass analyzer magnet 108 refines the initial ion beam. It should be recognized that the above-described ribbon ion beam generator 104 is only illustrative and that other systems may be employed within the scope of the invention.
• architecture 100 includes an acceleration/deceleration parallelizing lens system 120 and an energy filter system 122.
• Acceleration/deceleration parallelizing lens system 120 receives a fanned ribbon ion beam 124, i.e., from ribbon ion beam generator 104 and, in particular, mass resolving aperture 110.
• Fanned ribbon ion beam 124 may expand to, for example, approximately 35 cm.
• ribbon indicates that the ion beam is substantially elongated in a lateral direction.
• Lens system 120 at least parallelizes fanned ribbon ion beam 124 into a substantially parallel ribbon ion beam 112, and may also accelerate or deceleration ribbon ion beam 124.
• Lens system 120 includes a set of curved electrostatic plates 126 for parallelizing and perhaps accelerating or decelerating fanned ribbon ion beam 124 and a set of acceleration/deceleration lenses 130 for accelerating or decelerating substantially parallel ribbon ion beam 112. Note that because mass resolving aperture 110 provides a fanned ribbon beam 124 that is uniform in height at the set of curved electrostatic plates 126, the slots of these plates (lenses) 126 are required to be of uniform width.
• Energy filter system 122 downstream from lens system 120, removes energy contamination prior to a work piece 128 to be implanted by substantially parallel ribbon ion beam 112.
• Energy filter system 122 may include any now known or later developed magnetic or electrostatic (or combination of) energy filtering systems, which customarily bend substantially parallel ribbon ion beam 112 to remove neutral ions.
• Lens system 120 allows delivery of substantially parallel ribbon ion beam 112 to work piece 128 with energy that can extend down to as low as approximately 200 eV prior to work piece 128 (after deceleration) because of the shortened distance to work piece 128, which is an improvement in low energy achievement over conventional systems.
• Energy filter system 122 provides substantially parallel ribbon ion beam 112 that is substantially free of energy contamination.
• lens system 120 may have a length of no less than approximately 25 cm and no greater than approximately 30 cm.
• energy filter system 122 may have a length of as low as approximately 20 cm. Cumulatively, architecture 100 could have a length of no great than 50 cm, which is a significant reduction compared to the conventional 1 m length of a sector parallelizing lens alone. [0020] In another embodiment, shown in the flow diagram of FIG.
• the invention includes a method of ion implanting a work piece.
• a first step S1 a fanned ribbon ion beam 124 is generated using, for example, ribbon ion beam generator 104.
• ribbon ion beam generator includes an ion source 106, a mass analyzer magnet " 108, and a mass resolving aperture 110, which collectively generate a fanned ribbon ion beam 124.
• fanned ribbon ion beam 124 is substantially simultaneously parallelized and one of accelerated and decelerated into a substantially parallel ribbon ion beam 112, e.g., using lens system 120.
• step S3 energy contamination is filtered from substantially parallel ribbon ion beam 112, e.g., using energy filter system 122, immediately after the parallelizing step.
• step S4 substantially parallel ribbon ion beam 112 is implanted into a work piece 128.

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• Chemical & Material Sciences (AREA)
• Analytical Chemistry (AREA)
• Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• High Energy & Nuclear Physics (AREA)
• Health & Medical Sciences (AREA)
• Toxicology (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Physical Vapour Deposition (AREA)

Priority Applications (3)

Applications Claiming Priority (2)

Publications (2)

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• 2006
  • 2006-01-27 US US11/275,772 patent/US7394079B2/en active Active
• 2007
  • 2007-01-22 KR KR1020087020186A patent/KR101309853B1/ko active Active
  • 2007-01-22 WO PCT/US2007/001665 patent/WO2007089468A2/en not_active Ceased
  • 2007-01-22 JP JP2008552347A patent/JP5097131B2/ja active Active
  • 2007-01-22 CN CN2007800092815A patent/CN101416269B/zh active Active
  • 2007-01-24 TW TW096102648A patent/TWI395251B/zh active

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